CN101271944B - LED wafer encapsulation body and encapsulation thereof - Google Patents
LED wafer encapsulation body and encapsulation thereof Download PDFInfo
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- CN101271944B CN101271944B CN2007100887763A CN200710088776A CN101271944B CN 101271944 B CN101271944 B CN 101271944B CN 2007100887763 A CN2007100887763 A CN 2007100887763A CN 200710088776 A CN200710088776 A CN 200710088776A CN 101271944 B CN101271944 B CN 101271944B
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- semiconductor layer
- semiconductor layers
- metal level
- led wafer
- insulating barrier
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- 238000005538 encapsulation Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 264
- 239000000843 powder Substances 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims description 93
- 230000004888 barrier function Effects 0.000 claims description 87
- 238000004806 packaging method and process Methods 0.000 claims description 56
- 238000000034 method Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 33
- 238000012856 packing Methods 0.000 claims description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 abstract 3
- 238000007788 roughening Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
Abstract
A light emitting diode (LED) wafer package includes: an LED wafer which is provided with a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer, and the second semiconductor layer is provided with a plurality of fluorescent powder units on the surface which does not include the formed conductive contacts; an insulation layer formed on the surface ofthe first semiconductor layers, a plurality of parts of the insulation layer are removed for exposing the conductive contacts of the semiconductor layers and the fluorescent powder units; a metallic layer formed on the surface of the first semiconductor layers, the metallic layer is rubbed till that the unmoved part of the insulation layer is exposed, thus facilitating the part of the metallic layer positioned on the surface of each second semiconductor layer distributed with fluorescent powder units can be treated as a reflection layer, and facilitating the part of the metallic layer on the surface of each semiconductor layer formed with the conductive contacts can be taken as an electric connection layer; and a conductive bump formed on the part of each metallic layer which is taken as the electrical connection layer.
Description
Invention field
Put it briefly, the present invention relates to a kind of LED wafer packaging body and method for packing thereof, specifically, the present invention relates to LED wafer packaging body and method for packing thereof that a kind of brightness promotes.
Technical background
In recent years, it is more and more universal as the light emitting source of electronic installation, lighting apparatus or the like to replace existing light emitting source with light-emitting diode.Yet, replace existing light emitting source with light-emitting diode fully, must further promote the brightness of existing light-emitting diode.
Summary of the invention
The purpose of this invention is to provide LED wafer packaging body and method for packing thereof that a kind of brightness promotes.
According to a feature of the present invention, a kind of method for packing of LED wafer packaging body is provided, the method is characterized in that and comprise the steps: to provide a light-emitting diode wafer, this light-emitting diode wafer has several LED wafer, each LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, and each semiconductor layer has at least one conductive contact in its surface; On the surface that is formed with second semiconductor layer of this first semiconductor layer, form an insulating barrier that covers these second semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed surface with the part that exposes these semiconductor layers to the open air; On the specific exposed surface part of each second semiconductor layer, lay several fluorescent material unit; On the surface of these first semiconductor layers, form one second insulating barrier, thus the surface-coated lid that the previous quilt of these first semiconductor layers and these second semiconductor layers is exposed to the open air; This second insulating barrier is ground till the part that is not removed of first insulating barrier is exposed to the open air, this second insulating barrier by fixed with pattern, thereby some parts of this second insulating barrier are removed with the surface that is laid with the fluorescent material unit of exposing each second semiconductor layer to the open air and the conductive contact of each first and second semiconductor layer; On the surface of these first semiconductor layers, form a metal level, thereby these second semiconductor layers are capped, grind this metal level till the part that is not removed of these insulating barriers is exposed to the open air, thereby make the lip-deep metal level that is laid with the fluorescent material unit that is positioned at each second semiconductor layer partly can be used as a reflector, and partly can be used as a conduction articulamentum at the lip-deep metal level that is formed with conductive contact of each semiconductor layer; And partly go up to form conductive projection in each metal level as the conduction articulamentum, thereby make the conductive contact of each semiconductor layer be via the metal level of correspondence partly and corresponding conductive projection come to be electrically connected with external circuit.
According to another characteristic of the invention, provide a kind of method for packing of LED wafer packaging body to provide, the method is characterized in that and comprise the steps: to provide a light-emitting diode wafer, this light-emitting diode wafer has several LED wafer, each LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, and each semiconductor layer has at least one conductive contact in its surface; On the surface of each second semiconductor layer, lay several fluorescent material unit; On the surface that is formed with second semiconductor layer of these first semiconductor layers, form an insulating barrier that covers these second semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed conductive contact and these fluorescent material unit to expose these semiconductor layers to the open air; On the surface of these first semiconductor layers, form a metal level, thereby these second semiconductor layers are capped, grind this metal level till the part that is not removed of this insulating barrier is exposed to the open air, thereby make the lip-deep metal level that is laid with the fluorescent material unit that is positioned at each second semiconductor layer partly can be used as a reflector, and partly can be used as a conduction articulamentum at the lip-deep metal level that is formed with conductive contact of each semiconductor layer; And form conductive projection as the metal level of conduction articulamentum on partly at each, thereby make the conductive contact of each semiconductor layer be via the metal level of correspondence partly and corresponding conductive projection come to be electrically connected with external circuit.
According to another feature again of the present invention, a kind of method for packing of LED wafer packaging body is provided, the method is characterized in that and comprise the steps: to provide a light-emitting diode wafer, this light-emitting diode wafer has several LED wafer, each LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, and each semiconductor layer has at least one conductive contact in its surface; On the surface that is formed with second semiconductor layer of these first semiconductor layers, form an insulating barrier that covers these second semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed surface with the part that exposes each semiconductor layer to the open air; On the specific exposed surface part of each second semiconductor layer, lay a phosphor powder layer; On the surface of these first semiconductor layers, form one second insulating barrier, thereby the surface that the previous quilt that makes these semiconductor layers exposes to the open air and these phosphor powder layers 3 ' are capped, this second insulating barrier is ground till the part that is not removed of this first insulating barrier is exposed to the open air, and by fixed with pattern removing some parts of this insulating barrier, thereby the conductive contact of each phosphor powder layer and each semiconductor layer is exposed to the open air; On the surface of these first semiconductor layers, form a metal level, thereby these second semiconductor layers are capped, grind this metal level till the part that is not removed of these insulating barriers is exposed to the open air, thereby make the metal level that is positioned on each phosphor powder layer partly can be used as a reflector, and partly can be used as a conduction articulamentum at the lip-deep metal level that is formed with conductive contact of each semiconductor layer; And form conductive projection as the metal level of conduction articulamentum on partly at each, thereby the conductive contact that makes each semiconductor layer via the metal level of correspondence partly and corresponding conductive projection come to be electrically connected with external circuit.
According to another feature more of the present invention, a kind of method for packing of LED wafer packaging body is provided, the method is characterized in that and comprise following step: a light-emitting diode wafer is provided, this light-emitting diode wafer has several LED wafer, each LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, and each semiconductor layer has at least one conductive contact in its surface; On the surface of each second semiconductor layer, lay a phosphor powder layer; On the surface that is formed with second semiconductor layer of these first semiconductor layers, form an insulating barrier that covers these second semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed conductive contact and these phosphor powder layers to expose these semiconductor layers to the open air; On the surface of these first semiconductor layers, form a metal level, thereby these second semiconductor layers are capped, grind this metal level till the part that is not removed of this insulating barrier is exposed to the open air, thereby make the lip-deep metal level that is laid with phosphor powder layer that is positioned at each second semiconductor layer partly can be used as a reflector, and partly can be used as a conduction articulamentum at the lip-deep metal level that is formed with conductive contact of each semiconductor layer; And form conductive projection as the metal level of conduction articulamentum on partly at each, thereby make the conductive contact of each semiconductor layer be via the metal level of correspondence partly and corresponding conductive projection come to be electrically connected with external circuit.
According to a feature more again of the present invention, a kind of LED wafer packaging body is provided, this packaging body is characterised in that and comprises: a LED wafer, this LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, each semiconductor layer has at least one conductive contact in its surface, and this second semiconductor layer does not comprise having several fluorescent material unit on the surface that is formed with conductive contact at it; An insulating barrier that on the surface that is formed with second semiconductor layer of these first semiconductor layers, forms, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed conductive contact and these fluorescent material unit to expose these semiconductor layers to the open air; Thereby one is formed at the metal level that on the surface of these first semiconductor layers these second semiconductor layers is capped, grind this metal level till the part that is not removed of this insulating barrier is exposed to the open air, thereby make the lip-deep metal level that is laid with the fluorescent material unit that is positioned at each second semiconductor layer partly can be used as a reflector, and partly can be used as a conduction articulamentum at the lip-deep metal level that is formed with conductive contact of each semiconductor layer; And being formed on each as the conductive projection on the metal level part of conduction articulamentum, the conductive contact of each semiconductor layer is via the metal level part of correspondence and corresponding conductive projection comes and external circuit is electrically connected.
According to another feature more again of the present invention, a kind of LED wafer packaging body is provided, this packaging body is characterised in that and comprises: a LED wafer, this LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, each semiconductor layer has at least one conductive contact in its surface, and this second semiconductor layer does not comprise phosphor powder layer of formation on the surface that is formed with conductive contact at it; A lip-deep insulating barrier that is formed with second semiconductor layer that is formed on these first semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed conductive contact and this phosphor powder layer to expose these semiconductor layers to the open air; Thereby one is formed on the metal level that on the surface of these first semiconductor layers these second semiconductor layers is capped, grind this metal level till the part that is not removed of this insulating barrier is exposed to the open air, thereby make the lip-deep metal level that is laid with phosphor powder layer that is positioned at each second semiconductor layer partly can be used as a reflector, and partly can be used as a conduction articulamentum at the lip-deep metal level that is formed with conductive contact of each semiconductor layer; And being formed on each as the conductive projection on the metal level part of conduction articulamentum, the conductive contact of each semiconductor layer is via the metal level part of correspondence and corresponding conductive projection comes and external circuit is electrically connected.
Description of drawings
Fig. 1 to 9 is the signal technology cutaway views of method for packing that show the LED wafer packaging body of first preferred embodiment of the present invention;
Figure 10 to 13 is the signal technology cutaway views of method for packing that show the LED wafer packaging body of second preferred embodiment of the present invention;
Figure 14 is a schematic sectional view that shows the LED wafer packaging body of the 3rd preferred embodiment of the present invention;
Figure 15 to 19 is the signal technology cutaway views of method for packing that show the LED wafer packaging body of the 4th preferred embodiment of the present invention;
Figure 20 to 24 is the signal technology cutaway views of method for packing that show the LED wafer packaging body of the 5th preferred embodiment of the present invention; And
Figure 25 is the schematic sectional view that shows the LED wafer packaging body of the 6th preferred embodiment of the present invention.
Embodiment
Before the description of beginning the preferred embodiments of the present invention, should be noted that for clear and disclose feature of the present invention that element in graphic is not to describe by actual ratio.
Fig. 1 to 9 is the schematic sectional views of method for packing that show the LED wafer packaging body of first preferred embodiment of the present invention.
See also shown in Figure 1ly, a light-emitting diode wafer 1 at first is provided.This light-emitting diode wafer 1 comprises several LED wafer 10.Each LED wafer 10 has a n type semiconductor layer 100 and a p type semiconductor layer 102 that is arranged on this n type semiconductor layer 100.Each semiconductor layer 100,102 has at least one conductive contact 1000,1020 in its surface.
Then, as shown in FIG. 2, on the surface that is formed with p type semiconductor layer 102 of these n type semiconductor layers 100, formed an insulating barrier 20 to cover these p type semiconductor layers 102.In the present embodiment, this insulating barrier 20 is to be formed by suitable photosensitive material.
Then, see also shown in Figure 3ly, after exposure and step of developing, remove some parts of this insulating barrier 20, thereby the surface of the part of the surface of part of n type semiconductor layer 100 of each wafer 10 and p type semiconductor layer 102 is exposed to the open air.Then, on the specific exposed surface part of each p type semiconductor layer 102, be laid with several fluorescent material unit 3.
Then, on the surface of these n type semiconductor layers 100, formed an insulating barrier 21, thus the surface-coated lid that the previous quilt of these n type semiconductor layers 100 and these p type semiconductor layers 102 is exposed to the open air.Then, grind this insulating barrier 21 till the part that is not removed of previous insulating barrier 20 is exposed to the open air, as shown in FIG. 4.
Then, after exposure and step of developing, remove some parts of this insulating barrier 21, thereby the surface that is laid with fluorescent material unit 3 of each p type semiconductor layer 102 and the conductive contact 1000,1020 of each semiconductor layer 100,102 are exposed to the open air.
Then, on the surface of these n type semiconductor layers 100, form a metal level 4, thereby these p type semiconductor layers are capped.Then, grind this metal level 4 till the part that is not removed of insulating barrier 20,21 is exposed to the open air, as shown in Fig. 6 and 7.After metal level 4 is ground, the lip-deep metal level that is laid with fluorescent material unit 3 that is positioned at each p type semiconductor layer 102 partly can be used as a reflector, and at each semiconductor layer 100,102 the lip-deep metal level that is formed with conductive contact 1000,1020 partly can be used as a conduction articulamentum.
Please cooperate and consult shown in Fig. 8 and 9, after metal level 4 is ground, on each metal level part, be formed with conductive projection 5 as the conduction articulamentum, thereby make each semiconductor layer 100,102 conductive contact 1000,1020 partly is electrically connected with external circuit with corresponding conductive projection 5 via the metal level of correspondence.
At last, this wafer 1 is cut along line of cut, thereby has formed LED wafer packaging body of the present invention, as shown in FIG. 9.
By aforesaid structure, since these fluorescent material unit 3 with by the effect of the light that this LED wafer emitted and this metal level partly as the effect in reflector, the overall light intensity of LED wafer packaging body of the present invention is promoted many.
Figure 10 to 13 is the artworks of second preferred embodiment that show the method for packing of LED wafer packaging body of the present invention.
See also shown in Figure 10ly,, at first provide a light-emitting diode wafer 1 as first preferred embodiment.Wafer 1 in the present embodiment is identical with wafer among first embodiment, so it is described in more detail in this and repeats no more for this reason.Then, on the surface of each p type semiconductor layer 102, lay several fluorescent material unit 3.
Then, insulating barrier 20 is formed on the surface that is formed with p type semiconductor layer 102 of these n type semiconductor layers 100 to cover these p type semiconductor layers 102, as shown in Figure 11.As first preferred embodiment, this insulating barrier 20 also is to be formed by suitable photosensitive material.
Then, see also shown in Figure 12, after exposure and step of developing, remove some parts of this insulating barrier 20, thereby the conductive contact 1000 of n type semiconductor layer 100 of each wafer 10 and conductive contact 1020 and these fluorescent material unit 3 of p type semiconductor layer 102 are exposed to the open air.
Then, form and grind a metal level 4 as mentioned above, thereby make the lip-deep metal level that is laid with fluorescent material unit 3 that is positioned at each p type semiconductor layer 102 partly can be used as a reflector, and the lip-deep metal level that is formed with conductive contact 1000 and 1020 in each semiconductor layer 100 and 102 partly can be used as a conduction articulamentum.After metal level 4 was ground, conductive projection 5 also was formed as mentioned above.At last, this wafer 1 also is cut as mentioned above, thereby has formed LED wafer packaging body of the present invention, as shown in Figure 13.
Figure 14 is a schematic sectional view that shows the LED wafer packaging body of the 3rd preferred embodiment of the present invention.Different with the embodiment of front, the surface of the p type semiconductor layer 102 of present embodiment be through roughening treatment and also omitted the fluorescent material unit.Should be noted that the fluorescent material unit is not omitted in the claim that also should covered in the application's case.
Figure 15 to 19 is the signal artworks of method for packing that show the LED wafer packaging body of the 4th preferred embodiment of the present invention.
As shown in Figure 15, as foregoing embodiment, at first provide a light-emitting diode wafer 1.Wafer 1 in the present embodiment is identical with wafer among first embodiment, so it is described in more detail in this and repeats no more for this reason.Then, on the surface that is formed with p type semiconductor layer 102 of these n type semiconductor layers 100, formed an insulating barrier 20 to cover these p type semiconductor layers 102.As foregoing preferred embodiment, this insulating barrier 20 also is to be formed by suitable photosensitive material.Then, after exposure and step of developing, remove some parts of this insulating barrier 20, thereby the surface of the part of the surface of part of n type semiconductor layer 100 of each wafer 10 and p type semiconductor layer 102 is exposed to the open air.Then, on the specific exposed surface part of each p type semiconductor layer 102, be laid with a phosphor powder layer 3 '.
Then, on the surface of these n type semiconductor layers 100, form an insulating barrier 21, thereby surface and these phosphor powder layers 3 ' that the previous quilt of these n type semiconductor layers 100 and these p type semiconductor layers 102 is exposed to the open air are capped.Then, grind this insulating barrier 21 till the part that is not removed of previous insulating barrier 20 is exposed to the open air, as shown in Figure 16.
Then, after exposure and step of developing, remove some parts of this insulating barrier 21, thereby the conductive contact 1000 and 1020 of each phosphor powder layer 3 ' and each semiconductor layer 100 and 102 is exposed to the open air.
Then, form and grind a metal level 4 as mentioned above, thereby make the metal level that is positioned on each phosphor powder layer 3 ' partly can be used as a reflector, and at each semiconductor layer 100,102 the lip-deep metal level that is formed with conductive contact 1000 and 1020 partly can be used as a conduction articulamentum, as shown in Figure 17.After metal level 4 was ground, conductive projection 5 also was formed as mentioned above, as shown in Figure 18.At last, this wafer 1 also is cut as mentioned above, thereby forms LED wafer packaging body of the present invention, as shown in Figure 19.
Figure 20 to 24 is the signal artworks of method for packing that show the LED wafer packaging body of the 5th preferred embodiment of the present invention.
As shown in Figure 20, as foregoing embodiment, at first provide a light-emitting diode wafer 1.Wafer 1 in the present embodiment is identical with wafer among the foregoing embodiment, so it is described in more detail in this and repeats no more for this reason.Then, on the surface that does not comprise conductive contact 1020 of each p type semiconductor layer 102, form a phosphor powder layer 3 '.
Then, as shown in Figure 21, on the surface that is formed with p type semiconductor layer 102 of these n type semiconductor layers 100, form an insulating barrier 20 to cover these p type semiconductor layer 102 and phosphor powder layers 3 '.As foregoing preferred embodiment, this insulating barrier 20 also is to be formed by suitable photosensitive material.
Then, please cooperate shown in Figure 22ly, after exposure and step of developing, remove some parts of this insulating barrier 20, thereby the semiconductor layer 100 of each wafer 10 and 102 conductive contact 1000 and 1020 are exposed to the open air with each phosphor powder layer 3 '.Then, form and grind a metal level 4 as mentioned above, thereby make the metal level that is positioned on each phosphor powder layer 3 ' partly can be used as a reflector, and the lip-deep metal level that is formed with conductive contact 1000 and 1020 in each semiconductor layer 100 and 102 partly can be used as a conduction articulamentum.
Please cooperate and consult shown in Figure 23 and 24, after metal level 4 was ground, conductive projection 5 also was formed as mentioned above, as shown in Figure 23.At last, this wafer 1 also is cut as mentioned above, thereby forms LED wafer packaging body of the present invention, as shown in Figure 24.
Figure 25 is a schematic sectional view that shows the LED wafer packaging body of the 6th preferred embodiment of the present invention.Identical with the 3rd embodiment, the surface of the p type semiconductor layer 102 of present embodiment be through roughening treatment and also omitted the fluorescent material unit.Identical with the 3rd embodiment, should be noted that the fluorescent material unit is not omitted in the claim that also should covered in the application's case.
In sum, the present invention's it " LED wafer packaging body and method for packing thereof " really can pass through above-mentioned disclosed structure, device, reaches its intended purposes and effect, and do not see the also unexposed use of publication before the application, meet the requirements such as novelty, progress of patent of invention.
Above-mentioned disclosed graphic and explanation only is embodiments of the invention, and is non-for limiting embodiments of the invention; Those of ordinary skills, it complies with feature category of the present invention, and other equivalences of being done change or modify, and all should be encompassed in the claim of this case.
Claims (22)
1. the method for packing of a LED wafer packaging body is characterized in that comprising following step:
A light-emitting diode wafer is provided, this light-emitting diode wafer has several LED wafer, each LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, and each semiconductor layer has at least one conductive contact in its surface;
On the surface that is formed with second semiconductor layer of this first semiconductor layer, form first insulating barrier that covers these second semiconductor layers, this first insulating barrier by fixed with pattern, thereby make some parts of this first insulating barrier be removed surface with the part that exposes these semiconductor layers to the open air;
On the specific exposed surface part of each second semiconductor layer, lay several fluorescent material unit;
On the surface of these first semiconductor layers, form one second insulating barrier, thus the surface-coated lid that the previous quilt of these first semiconductor layers and these second semiconductor layers is exposed to the open air;
This second insulating barrier is ground till the part that is not removed of first insulating barrier is exposed to the open air, this second insulating barrier by fixed with pattern, thereby some parts of this second insulating barrier are removed with the surface that is laid with the fluorescent material unit of exposing each second semiconductor layer to the open air and the conductive contact of each first and second semiconductor layer;
On the surface of these first semiconductor layers, form a metal level, thereby these second semiconductor layers are capped, grind this metal level till the part that is not removed of these first and second insulating barriers is exposed to the open air, thereby make the lip-deep metal level that is laid with the fluorescent material unit that is positioned at each second semiconductor layer partly as a reflector, and at the lip-deep metal level that is formed with conductive contact of each semiconductor layer partly as a conduction articulamentum; And
Form conductive projection as the metal level of conduction articulamentum on partly at each, thus the conductive contact that makes each semiconductor layer via the metal level of correspondence partly and corresponding conductive projection come to be electrically connected with external circuit.
2. the method for packing of LED wafer packaging body as claimed in claim 1 is characterized in that also comprising, cuts this wafer to obtain other LED wafer packaging body along line of cut.
3. the method for packing of LED wafer packaging body as claimed in claim 1, wherein, these first semiconductor layers are n type semiconductor layers, and these second semiconductor layers are p type semiconductor layers.
4. the method for packing of LED wafer packaging body as claimed in claim 1, wherein, the surface of these second semiconductor layers is through roughened.
5. the method for packing of a LED wafer packaging body is characterized in that comprising following step:
A light-emitting diode wafer is provided, this light-emitting diode wafer has several LED wafer, each LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, and each semiconductor layer has at least one conductive contact in its surface;
On the surface of each second semiconductor layer, lay several fluorescent material unit;
On the surface that is formed with second semiconductor layer of these first semiconductor layers, form an insulating barrier that covers these second semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed conductive contact and these fluorescent material unit to expose these semiconductor layers to the open air;
On the surface of these first semiconductor layers, form a metal level, thereby these second semiconductor layers are capped, grind this metal level till the part that is not removed of this insulating barrier is exposed to the open air, thereby make the lip-deep metal level that is laid with the fluorescent material unit that is positioned at each second semiconductor layer partly as a reflector, and at the lip-deep metal level that is formed with conductive contact of each semiconductor layer partly as a conduction articulamentum; And
Form conductive projection as the metal level of conduction articulamentum on partly at each, thus make the conductive contact of each semiconductor layer be via the metal level of correspondence partly and corresponding conductive projection come to be electrically connected with external circuit.
6. the method for packing of LED wafer packaging body as claimed in claim 5 is characterized in that also comprising, cuts this wafer to obtain other LED wafer packaging body along line of cut.
7. the method for packing of LED wafer packaging body as claimed in claim 5, wherein, these first semiconductor layers are n type semiconductor layers, and these second semiconductor layers are p type semiconductor layers.
8. the method for packing of LED wafer packaging body as claimed in claim 5, wherein, the surface of these second semiconductor layers is through roughened.
9. the method for packing of a sharp LED wafer packaging body is characterized in that comprising following step:
A light-emitting diode wafer is provided, this light-emitting diode wafer has several LED wafer, each LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, and each semiconductor layer has at least one conductive contact in its surface;
On the surface that is formed with second semiconductor layer of these first semiconductor layers, form first insulating barrier that covers these second semiconductor layers, this first insulating barrier by fixed with pattern, thereby make some parts of this first insulating barrier be removed surface with the part that exposes each semiconductor layer to the open air;
On the specific exposed surface part of each second semiconductor layer, lay a phosphor powder layer;
On the surface of these first semiconductor layers, form one second insulating barrier, thereby the surface that the previous quilt that makes these semiconductor layers exposes to the open air and these phosphor powder layers (3 ') are capped, this second insulating barrier is ground till the part that is not removed of this first insulating barrier is exposed to the open air, and by fixed with pattern removing some parts of this second insulating barrier, thereby the conductive contact of each phosphor powder layer and each semiconductor layer is exposed to the open air;
On the surface of these first semiconductor layers, form a metal level, thereby these second semiconductor layers are capped, grind this metal level till the part that is not removed of these first and second insulating barriers is exposed to the open air, thereby make the metal level that is positioned on each phosphor powder layer partly as a reflector, and at the lip-deep metal level that is formed with conductive contact of each semiconductor layer partly as a conduction articulamentum; And
Form conductive projection as the metal level of conduction articulamentum on partly at each, thus the conductive contact that makes each semiconductor layer via the metal level of correspondence partly and corresponding conductive projection come to be electrically connected with external circuit.
10. the method for packing of LED wafer packaging body as claimed in claim 9 is characterized in that also comprising, cuts this wafer to obtain other LED wafer packaging body along line of cut.
11. the method for packing of LED wafer packaging body as claimed in claim 9, wherein, these first semiconductor layers are n type semiconductor layers, and these second semiconductor layers are p type semiconductor layers.
12. the method for packing of LED wafer packaging body as claimed in claim 9, wherein, the surface of these second semiconductor layers is through roughened.
13. the method for packing of a LED wafer packaging body is characterized in that comprising following step:
A light-emitting diode wafer is provided, this light-emitting diode wafer has several LED wafer, each LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, and each semiconductor layer has at least one conductive contact in its surface;
On the surface of each second semiconductor layer, lay a phosphor powder layer;
On the surface that is formed with second semiconductor layer of these first semiconductor layers, form an insulating barrier that covers these second semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed conductive contact and these phosphor powder layers to expose these semiconductor layers to the open air;
On the surface of these first semiconductor layers, form a metal level, thereby these second semiconductor layers are capped, grind this metal level till the part that is not removed of this insulating barrier is exposed to the open air, thereby make the lip-deep metal level that is laid with phosphor powder layer that is positioned at each second semiconductor layer partly as a reflector, and at the lip-deep metal level that is formed with conductive contact of each semiconductor layer partly as a conduction articulamentum; And
Form conductive projection as the metal level of conduction articulamentum on partly at each, thus the conductive contact that makes each semiconductor layer via the metal level of correspondence partly and corresponding conductive projection come to be electrically connected with external circuit.
14. the method for packing of LED wafer packaging body as claimed in claim 13 is characterized in that also comprising, cuts this wafer to obtain other LED wafer packaging body along line of cut.
15. the method for packing of LED wafer packaging body as claimed in claim 13, wherein, these first semiconductor layers are n type semiconductor layers, and these second semiconductor layers are p type semiconductor layers.
16. the method for packing of LED wafer packaging body as claimed in claim 13, wherein, the surface of these second semiconductor layers is through roughened.
17. a LED wafer packaging body is characterized in that comprising:
A LED wafer, this LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, each semiconductor layer has at least one conductive contact in its surface, and this second semiconductor layer does not comprise having several fluorescent material unit on the surface that is formed with conductive contact at it;
A lip-deep insulating barrier that is formed with second semiconductor layer that is formed at these first semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed conductive contact and these fluorescent material unit to expose these semiconductor layers to the open air;
Thereby one is formed at the metal level that on the surface of these first semiconductor layers these second semiconductor layers is capped, grind this metal level till the part that is not removed of this insulating barrier is exposed to the open air, thereby make the lip-deep metal level that is laid with the fluorescent material unit that is positioned at each second semiconductor layer partly as a reflector, and at the lip-deep metal level that is formed with conductive contact of each semiconductor layer partly as a conduction articulamentum; And
Be formed at each as the conductive projection on the metal level part of conduction articulamentum, the conductive contact of each semiconductor layer comes with corresponding conductive projection via the metal level part of correspondence and external circuit is electrically connected.
18. LED wafer packaging body as claimed in claim 17, wherein, these first semiconductor layers are n type semiconductor layers, and these second semiconductor layers are p type semiconductor layers.
19. LED wafer packaging body as claimed in claim 17, wherein, the surface of these second semiconductor layers is through roughened.
20. a LED wafer packaging body is characterized in that comprising:
A LED wafer, this LED wafer has one first semiconductor layer and second semiconductor layer that is arranged on this first semiconductor layer, each semiconductor layer has at least one conductive contact in its surface, and this second semiconductor layer does not comprise phosphor powder layer of formation on the surface that is formed with conductive contact at it;
A lip-deep insulating barrier that is formed with second semiconductor layer that is formed at these first semiconductor layers, this insulating barrier by fixed with pattern, thereby make some parts of this insulating barrier be removed conductive contact and this phosphor powder layer to expose these semiconductor layers to the open air;
Thereby one is formed at the metal level that on the surface of these first semiconductor layers these second semiconductor layers is capped, grind this metal level till the part that is not removed of this insulating barrier is exposed to the open air, thereby make the lip-deep metal level that is laid with phosphor powder layer that is positioned at each second semiconductor layer partly as a reflector, and at the lip-deep metal level that is formed with conductive contact of each semiconductor layer partly as a conduction articulamentum; And
Be formed at each as the conductive projection on the metal level part of conduction articulamentum, the conductive contact of each semiconductor layer comes with corresponding conductive projection via the metal level part of correspondence and external circuit is electrically connected.
21. LED wafer packaging body as claimed in claim 20, wherein, these first semiconductor layers are n type semiconductor layers, and these second semiconductor layers are p type semiconductor layers.
22. LED wafer packaging body as claimed in claim 20, wherein, the surface of these second semiconductor layers is through roughened.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100887763A CN101271944B (en) | 2007-03-22 | 2007-03-22 | LED wafer encapsulation body and encapsulation thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100887763A CN101271944B (en) | 2007-03-22 | 2007-03-22 | LED wafer encapsulation body and encapsulation thereof |
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| CN101271944A CN101271944A (en) | 2008-09-24 |
| CN101271944B true CN101271944B (en) | 2010-07-14 |
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| CN2007100887763A Expired - Fee Related CN101271944B (en) | 2007-03-22 | 2007-03-22 | LED wafer encapsulation body and encapsulation thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103367557A (en) * | 2012-03-28 | 2013-10-23 | 刘胜 | Manufacturing method of light emitting diode wafer which emits white light directly |
| CN113848615B (en) * | 2021-08-30 | 2023-06-09 | 中国电子科技集团公司第十三研究所 | Ceramic packaging shell |
Citations (4)
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|---|---|---|---|---|
| US6603146B1 (en) * | 1999-10-07 | 2003-08-05 | Sharp Kabushiki Kaisha | Gallium nitride group compound semiconductor light-emitting device |
| US6744196B1 (en) * | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
| CN1866553A (en) * | 2005-05-19 | 2006-11-22 | 沈育浓 | LED chip package and packaging method thereof |
| CN1866555A (en) * | 2005-05-19 | 2006-11-22 | 沈育浓 | LED chip package and packaging method thereof |
-
2007
- 2007-03-22 CN CN2007100887763A patent/CN101271944B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6603146B1 (en) * | 1999-10-07 | 2003-08-05 | Sharp Kabushiki Kaisha | Gallium nitride group compound semiconductor light-emitting device |
| US6744196B1 (en) * | 2002-12-11 | 2004-06-01 | Oriol, Inc. | Thin film LED |
| CN1866553A (en) * | 2005-05-19 | 2006-11-22 | 沈育浓 | LED chip package and packaging method thereof |
| CN1866555A (en) * | 2005-05-19 | 2006-11-22 | 沈育浓 | LED chip package and packaging method thereof |
Non-Patent Citations (1)
| Title |
|---|
| JP特开平11-145519A 1999.05.28 |
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| CN101271944A (en) | 2008-09-24 |
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