CN101278380B - 利用沉积刻蚀序列的间隙填充处理 - Google Patents
利用沉积刻蚀序列的间隙填充处理 Download PDFInfo
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- CN101278380B CN101278380B CN2006800309381A CN200680030938A CN101278380B CN 101278380 B CN101278380 B CN 101278380B CN 2006800309381 A CN2006800309381 A CN 2006800309381A CN 200680030938 A CN200680030938 A CN 200680030938A CN 101278380 B CN101278380 B CN 101278380B
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- 239000007789 gas Substances 0.000 claims abstract description 141
- 230000008021 deposition Effects 0.000 claims abstract description 126
- 239000000758 substrate Substances 0.000 claims abstract description 110
- 238000000034 method Methods 0.000 claims abstract description 64
- 238000012545 processing Methods 0.000 claims abstract description 37
- 239000002243 precursor Substances 0.000 claims abstract description 25
- 238000005137 deposition process Methods 0.000 claims abstract description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 claims description 4
- 150000002367 halogens Chemical class 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 117
- 238000004544 sputter deposition Methods 0.000 abstract 2
- 239000010408 film Substances 0.000 description 45
- 239000000463 material Substances 0.000 description 38
- 230000008569 process Effects 0.000 description 25
- 238000005530 etching Methods 0.000 description 20
- 238000011049 filling Methods 0.000 description 16
- 238000005516 engineering process Methods 0.000 description 15
- 208000037998 chronic venous disease Diseases 0.000 description 11
- 210000001161 mammalian embryo Anatomy 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 241000894007 species Species 0.000 description 7
- 239000011800 void material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007800 oxidant agent Substances 0.000 description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 6
- 238000005086 pumping Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000004804 winding Methods 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000004568 cement Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000004567 concrete Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-VVKOMZTBSA-N Dideuterium Chemical compound [2H][2H] UFHFLCQGNIYNRP-VVKOMZTBSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000734468 Listera Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000024241 parasitism Effects 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000004224 protection Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
- H01L21/31612—Deposition of SiO2 on a silicon body
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/166,357 US7329586B2 (en) | 2005-06-24 | 2005-06-24 | Gapfill using deposition-etch sequence |
US11/166,357 | 2005-06-24 | ||
PCT/US2006/023311 WO2007001878A2 (en) | 2005-06-24 | 2006-06-15 | Gapfill using deposition-etch sequence |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101278380A CN101278380A (zh) | 2008-10-01 |
CN101278380B true CN101278380B (zh) | 2012-05-23 |
Family
ID=37568134
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800309381A Expired - Fee Related CN101278380B (zh) | 2005-06-24 | 2006-06-15 | 利用沉积刻蚀序列的间隙填充处理 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7329586B2 (zh) |
JP (1) | JP5225081B2 (zh) |
CN (1) | CN101278380B (zh) |
WO (1) | WO2007001878A2 (zh) |
Families Citing this family (21)
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US7442620B2 (en) * | 2006-06-13 | 2008-10-28 | Macronix International Co., Ltd. | Methods for forming a trench isolation structure with rounded corners in a silicon substrate |
US20080299775A1 (en) * | 2007-06-04 | 2008-12-04 | Applied Materials, Inc. | Gapfill extension of hdp-cvd integrated process modulation sio2 process |
KR20090022557A (ko) * | 2007-08-31 | 2009-03-04 | 삼성전자주식회사 | 고밀도 플라즈마 화학 기상 증착 장치 및 그를 이용한절연막 형성 방법 |
US7745350B2 (en) * | 2007-09-07 | 2010-06-29 | Applied Materials, Inc. | Impurity control in HDP-CVD DEP/ETCH/DEP processes |
US7867921B2 (en) * | 2007-09-07 | 2011-01-11 | Applied Materials, Inc. | Reduction of etch-rate drift in HDP processes |
US7989262B2 (en) | 2008-02-22 | 2011-08-02 | Cavendish Kinetics, Ltd. | Method of sealing a cavity |
US7993950B2 (en) * | 2008-04-30 | 2011-08-09 | Cavendish Kinetics, Ltd. | System and method of encapsulation |
US7972968B2 (en) * | 2008-08-18 | 2011-07-05 | Applied Materials, Inc. | High density plasma gapfill deposition-etch-deposition process etchant |
JP5514420B2 (ja) * | 2008-09-17 | 2014-06-04 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
US7910491B2 (en) * | 2008-10-16 | 2011-03-22 | Applied Materials, Inc. | Gapfill improvement with low etch rate dielectric liners |
JP5568244B2 (ja) * | 2009-03-23 | 2014-08-06 | ラピスセミコンダクタ株式会社 | 半導体装置の製造方法 |
JP2012004542A (ja) * | 2010-05-20 | 2012-01-05 | Tokyo Electron Ltd | シリコン膜の形成方法およびその形成装置 |
US8497211B2 (en) | 2011-06-24 | 2013-07-30 | Applied Materials, Inc. | Integrated process modulation for PSG gapfill |
CN103681459B (zh) * | 2012-09-05 | 2016-03-30 | 中芯国际集成电路制造(上海)有限公司 | 提高金属前介质层空隙填充能力的方法 |
US9087542B1 (en) * | 2012-12-10 | 2015-07-21 | Western Digital (Fremont), Llc | Method for providing a structure having reduced voids in a magnetic recording transducer |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US20150206803A1 (en) * | 2014-01-19 | 2015-07-23 | United Microelectronics Corp. | Method of forming inter-level dielectric layer |
US9425078B2 (en) * | 2014-02-26 | 2016-08-23 | Lam Research Corporation | Inhibitor plasma mediated atomic layer deposition for seamless feature fill |
US9502238B2 (en) | 2015-04-03 | 2016-11-22 | Lam Research Corporation | Deposition of conformal films by atomic layer deposition and atomic layer etch |
GB201620680D0 (en) * | 2016-12-05 | 2017-01-18 | Spts Technologies Ltd | Method of smoothing a surface |
JP7203515B2 (ja) * | 2017-06-06 | 2023-01-13 | アプライド マテリアルズ インコーポレイテッド | 連続した堆積-エッチング-処理方法を使用した酸化ケイ素及び窒化ケイ素のボトムアップ成長 |
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US5923993A (en) * | 1997-12-17 | 1999-07-13 | Advanced Micro Devices | Method for fabricating dishing free shallow isolation trenches |
US6265269B1 (en) * | 1999-08-04 | 2001-07-24 | Mosel Vitelic Inc. | Method for fabricating a concave bottom oxide in a trench |
US6846745B1 (en) * | 2001-08-03 | 2005-01-25 | Novellus Systems, Inc. | High-density plasma process for filling high aspect ratio structures |
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WO2007001878A3 (en) | 2007-08-09 |
JP2008547224A (ja) | 2008-12-25 |
CN101278380A (zh) | 2008-10-01 |
JP5225081B2 (ja) | 2013-07-03 |
WO2007001878A2 (en) | 2007-01-04 |
US7329586B2 (en) | 2008-02-12 |
US20060292894A1 (en) | 2006-12-28 |
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