CN101288169A - 使用包含具可调式电阻的可切换半导体存储器元件的存储器单元的方法 - Google Patents
使用包含具可调式电阻的可切换半导体存储器元件的存储器单元的方法 Download PDFInfo
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- CN101288169A CN101288169A CN200680035454.6A CN200680035454A CN101288169A CN 101288169 A CN101288169 A CN 101288169A CN 200680035454 A CN200680035454 A CN 200680035454A CN 101288169 A CN101288169 A CN 101288169A
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- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10N70/801—Constructional details of multistable switching devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
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Abstract
Description
Claims (16)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/237,167 US7800932B2 (en) | 2005-09-28 | 2005-09-28 | Memory cell comprising switchable semiconductor memory element with trimmable resistance |
US11/237,167 | 2005-09-28 | ||
US11/496,986 US7800933B2 (en) | 2005-09-28 | 2006-07-31 | Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance |
US11/496,986 | 2006-07-31 | ||
PCT/US2006/037963 WO2007038709A1 (en) | 2005-09-28 | 2006-09-27 | Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101288169A true CN101288169A (zh) | 2008-10-15 |
CN101288169B CN101288169B (zh) | 2012-04-11 |
Family
ID=37594954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200680035454.6A Expired - Fee Related CN101288169B (zh) | 2005-09-28 | 2006-09-27 | 使用包含可切换半导体存储器元件的存储器单元的方法 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7800932B2 (zh) |
CN (1) | CN101288169B (zh) |
TW (1) | TWI309083B (zh) |
WO (1) | WO2007038665A1 (zh) |
Cited By (3)
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CN102656640A (zh) * | 2009-12-21 | 2012-09-05 | 桑迪士克3D有限责任公司 | 具有多电平、单次写入存储器单元的可重写存储器件 |
CN103828047A (zh) * | 2011-07-22 | 2014-05-28 | 科洛斯巴股份有限公司 | 用于非易失性存储器装置的p+硅锗材料的种子层及方法 |
CN104916321A (zh) * | 2014-03-14 | 2015-09-16 | 恩智浦有限公司 | 可再编程存储器中的一次编程 |
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US7800933B2 (en) * | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance |
US20070164388A1 (en) * | 2002-12-19 | 2007-07-19 | Sandisk 3D Llc | Memory cell comprising a diode fabricated in a low resistivity, programmed state |
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US7800932B2 (en) * | 2005-09-28 | 2010-09-21 | Sandisk 3D Llc | Memory cell comprising switchable semiconductor memory element with trimmable resistance |
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2005
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- 2006-07-31 US US11/496,984 patent/US7447056B2/en active Active
- 2006-09-27 WO PCT/US2006/037803 patent/WO2007038665A1/en active Application Filing
- 2006-09-27 TW TW095135851A patent/TWI309083B/zh not_active IP Right Cessation
- 2006-09-27 CN CN200680035454.6A patent/CN101288169B/zh not_active Expired - Fee Related
Cited By (4)
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CN102656640A (zh) * | 2009-12-21 | 2012-09-05 | 桑迪士克3D有限责任公司 | 具有多电平、单次写入存储器单元的可重写存储器件 |
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CN104916321A (zh) * | 2014-03-14 | 2015-09-16 | 恩智浦有限公司 | 可再编程存储器中的一次编程 |
CN104916321B (zh) * | 2014-03-14 | 2019-01-29 | 恩智浦有限公司 | 可再编程存储器中的一次编程 |
Also Published As
Publication number | Publication date |
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WO2007038665A1 (en) | 2007-04-05 |
US20070090425A1 (en) | 2007-04-26 |
TWI309083B (en) | 2009-04-21 |
US7447056B2 (en) | 2008-11-04 |
TW200733358A (en) | 2007-09-01 |
US20070069276A1 (en) | 2007-03-29 |
US7800932B2 (en) | 2010-09-21 |
US20070070690A1 (en) | 2007-03-29 |
CN101288169B (zh) | 2012-04-11 |
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