CN101322231B - 高密度三维半导体晶片封装 - Google Patents
高密度三维半导体晶片封装 Download PDFInfo
- Publication number
- CN101322231B CN101322231B CN2006800456304A CN200680045630A CN101322231B CN 101322231 B CN101322231 B CN 101322231B CN 2006800456304 A CN2006800456304 A CN 2006800456304A CN 200680045630 A CN200680045630 A CN 200680045630A CN 101322231 B CN101322231 B CN 101322231B
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- Prior art keywords
- substrate layer
- flash memory
- substrate
- trace
- traces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0657—Stacked arrangements of devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/485—Adaptation of interconnections, e.g. engineering charges, repair techniques
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5382—Adaptable interconnections, e.g. for engineering changes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
- G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06527—Special adaptation of electrical connections, e.g. rewiring, engineering changes, pressure contacts, layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
- H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
- H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
- H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L2225/06503—Stacked arrangements of devices
- H01L2225/06579—TAB carriers; beam leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims (32)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/264,889 US7663216B2 (en) | 2005-11-02 | 2005-11-02 | High density three dimensional semiconductor die package |
US11/264,889 | 2005-11-02 | ||
PCT/US2006/042664 WO2007056013A2 (en) | 2005-11-02 | 2006-11-01 | High density three dimensional semiconductor die package |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101322231A CN101322231A (zh) | 2008-12-10 |
CN101322231B true CN101322231B (zh) | 2011-11-23 |
Family
ID=37995167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800456304A Active CN101322231B (zh) | 2005-11-02 | 2006-11-01 | 高密度三维半导体晶片封装 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7663216B2 (zh) |
EP (1) | EP1949427A2 (zh) |
KR (1) | KR101015266B1 (zh) |
CN (1) | CN101322231B (zh) |
TW (1) | TWI339884B (zh) |
WO (1) | WO2007056013A2 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008142875A (ja) * | 2006-12-13 | 2008-06-26 | Hitachi Cable Ltd | 個片切断用金型および半導体装置の製造方法 |
SG149725A1 (en) * | 2007-07-24 | 2009-02-27 | Micron Technology Inc | Thin semiconductor die packages and associated systems and methods |
SG149724A1 (en) | 2007-07-24 | 2009-02-27 | Micron Technology Inc | Semicoductor dies with recesses, associated leadframes, and associated systems and methods |
EP2031598A1 (en) * | 2007-08-31 | 2009-03-04 | Axalto SA | System and method of writing data in a flash memory on the basis of additional removable contact pads |
US8951841B2 (en) * | 2012-03-20 | 2015-02-10 | Infineon Technologies Ag | Clip frame semiconductor packages and methods of formation thereof |
CN102723287B (zh) * | 2012-06-09 | 2013-10-09 | 江苏长电科技股份有限公司 | 双面三维线路芯片正装先封后蚀制造方法及其封装结构 |
JP6118652B2 (ja) * | 2013-02-22 | 2017-04-19 | ルネサスエレクトロニクス株式会社 | 半導体チップ及び半導体装置 |
KR102099878B1 (ko) | 2013-07-11 | 2020-04-10 | 삼성전자 주식회사 | 반도체 패키지 |
KR101663558B1 (ko) | 2016-05-23 | 2016-10-07 | 제엠제코(주) | 패키지 파괴 방지 구조를 갖는 반도체 칩 패키지 |
US10615151B2 (en) * | 2016-11-30 | 2020-04-07 | Shenzhen Xiuyuan Electronic Technology Co., Ltd | Integrated circuit multichip stacked packaging structure and method |
US10957705B2 (en) * | 2018-12-24 | 2021-03-23 | Sandisk Technologies Llc | Three-dimensional memory devices having a multi-stack bonded structure using a logic die and multiple three-dimensional memory dies and method of making the same |
US11301151B2 (en) * | 2020-05-08 | 2022-04-12 | Macronix International Co., Ltd. | Multi-die memory apparatus and identification method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0383296A2 (en) * | 1989-02-15 | 1990-08-22 | Matsushita Electric Industrial Co., Ltd. | Method of producing a semiconductor device package |
US4982265A (en) * | 1987-06-24 | 1991-01-01 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
US5028986A (en) * | 1987-12-28 | 1991-07-02 | Hitachi, Ltd. | Semiconductor device and semiconductor module with a plurality of stacked semiconductor devices |
US5434745A (en) * | 1994-07-26 | 1995-07-18 | White Microelectronics Div. Of Bowmar Instrument Corp. | Stacked silicon die carrier assembly |
TW540004B (en) * | 2000-01-25 | 2003-07-01 | Hitachi Ltd | IC card |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6486528B1 (en) * | 1994-06-23 | 2002-11-26 | Vertical Circuits, Inc. | Silicon segment programming apparatus and three terminal fuse configuration |
US5873161A (en) | 1996-07-23 | 1999-02-23 | Minnesota Mining And Manufacturing Company | Method of making a Z axis interconnect circuit |
US6600222B1 (en) * | 2002-07-17 | 2003-07-29 | Intel Corporation | Stacked microelectronic packages |
US7550842B2 (en) | 2002-12-12 | 2009-06-23 | Formfactor, Inc. | Integrated circuit assembly |
US6929065B2 (en) * | 2003-08-08 | 2005-08-16 | James H. Cannon | Latch-type tubing protector having C-shaped clamping members, a minimized running profile and a large holding force |
WO2005101941A1 (ja) | 2004-03-30 | 2005-10-27 | Geltec Co., Ltd. | 電磁波吸収体 |
US7245021B2 (en) | 2004-04-13 | 2007-07-17 | Vertical Circuits, Inc. | Micropede stacked die component assembly |
-
2005
- 2005-11-02 US US11/264,889 patent/US7663216B2/en active Active
-
2006
- 2006-11-01 TW TW095140456A patent/TWI339884B/zh not_active IP Right Cessation
- 2006-11-01 EP EP06827290A patent/EP1949427A2/en not_active Withdrawn
- 2006-11-01 WO PCT/US2006/042664 patent/WO2007056013A2/en active Application Filing
- 2006-11-01 CN CN2006800456304A patent/CN101322231B/zh active Active
- 2006-11-01 KR KR1020087013352A patent/KR101015266B1/ko active IP Right Grant
-
2009
- 2009-12-29 US US12/648,697 patent/US8653653B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4982265A (en) * | 1987-06-24 | 1991-01-01 | Hitachi, Ltd. | Semiconductor integrated circuit device and method of manufacturing the same |
US5028986A (en) * | 1987-12-28 | 1991-07-02 | Hitachi, Ltd. | Semiconductor device and semiconductor module with a plurality of stacked semiconductor devices |
EP0383296A2 (en) * | 1989-02-15 | 1990-08-22 | Matsushita Electric Industrial Co., Ltd. | Method of producing a semiconductor device package |
US5434745A (en) * | 1994-07-26 | 1995-07-18 | White Microelectronics Div. Of Bowmar Instrument Corp. | Stacked silicon die carrier assembly |
TW540004B (en) * | 2000-01-25 | 2003-07-01 | Hitachi Ltd | IC card |
Non-Patent Citations (1)
Title |
---|
US 4982265 A,全文. |
Also Published As
Publication number | Publication date |
---|---|
CN101322231A (zh) | 2008-12-10 |
US7663216B2 (en) | 2010-02-16 |
US20070096266A1 (en) | 2007-05-03 |
TW200729448A (en) | 2007-08-01 |
KR101015266B1 (ko) | 2011-02-18 |
TWI339884B (en) | 2011-04-01 |
US20100102440A1 (en) | 2010-04-29 |
WO2007056013A3 (en) | 2007-07-26 |
KR20080080296A (ko) | 2008-09-03 |
WO2007056013A2 (en) | 2007-05-18 |
US8653653B2 (en) | 2014-02-18 |
EP1949427A2 (en) | 2008-07-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: SANDISK TECHNOLOGIES, INC. Free format text: FORMER OWNER: SANDISK CORPORATION Effective date: 20120913 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20120913 Address after: American Texas Patentee after: Sandisk Corp. Address before: American California Patentee before: Sandisk Corp. |
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C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: American Texas Patentee after: DELPHI INT OPERATIONS LUX SRL Address before: American Texas Patentee before: Sandisk Corp. |