CN101322450A - 具有内部散热结构的ic封装 - Google Patents

具有内部散热结构的ic封装 Download PDF

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CN101322450A
CN101322450A CNA2007800004354A CN200780000435A CN101322450A CN 101322450 A CN101322450 A CN 101322450A CN A2007800004354 A CNA2007800004354 A CN A2007800004354A CN 200780000435 A CN200780000435 A CN 200780000435A CN 101322450 A CN101322450 A CN 101322450A
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CN101322450B (zh
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符会利
沈文龙
仲镇华
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Hong Kong Applied Science and Technology Research Institute ASTRI
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Abstract

一种IC封装(100)，其包括一个基板(102)和多个穿过此基板的散热过孔(118)。基板(102)包括一个电源层(108)、一个接地层(110)、和一个位于电源层(108)和接地层(110)之间的绝缘层(103)。电源层(108)包括一个电源区(130)和一个非电源区(132)，它们被互相隔开。散热过孔(118)被连接到电源层(108)的非电源区(132)和接地层(110)以增强IC封装(100)的散热性能。

Description

具有内部散热结构的IC封装
技术领域
本发明涉及IC封装，特别涉及具有内部散热结构的IC封装。
背景技术
IC封装的主要挑战之一是散热。在局限模块里随着组件数目和电路密度的增加，在整个IC封装上有效分配热的策略对避免由于过热导致设备过早崩溃极其关键。本发明披露了一种可行且能够即刻付诸实施的技术以增强在整个IC封装上的有效散热。
图1显示一个传统的BGA封装10(球栅阵列封装)。传统的BGA封装10包括一个基板2、多个穿过基板2的传导过孔、多个外部连接接线端如焊接球、一个在基板2上表面上的上导电层12、一个在基板2下表面上的下导电层14、一个在上导电层12上的芯片安装胶粘层(导电或不导电)4，和一个贴附在芯片安装胶粘层4上的半导体芯片6。基板2包括一个绝缘层3、一个电源层8、和一个接地层11。半导体芯片6通过焊接线16而电连接到上导电层12。
传导过孔包括多个散热过孔18、电源过孔20、和穿透基板2的信号过孔22。焊接球包括多个散热球24、电源球26、和信号球28。
散热球24通过散热过孔18连接到接地层11。散热过孔18没有连接到电源层8。结果，在封装10里仅有接地层11是用于散热的部分直接路径。在封装10里，电源层8不是散热路径。
发明内容
本发明提供了一种IC封装。一方面，IC封装包括一个基板和多个穿过基板的散热过孔、电源过孔和信号过孔。基板包括一个电源层、一个接地层、和一个位于电源层和接地层之间的绝缘层。电源层包括一个电源区和一个非电源区，它们被相互隔开。散热过孔连接到电源层的非电源区和接地层。电源过孔连接到电源层的电源区，但与电源层的非电源区和接地层隔离。信号过孔与电源层和接地层隔离。
接地层可以包括多个过孔隔离区。电源过孔和信号过孔经过过孔隔离区，而没有连接到接地层。过孔隔离区可以是在接地层里形成的孔洞。
电源层可以包括多个过孔隔离区。信号过孔经过过孔隔离区，而没有连接到电源层。过孔隔离区可以是在电源层里形成的孔洞。
另一方面，IC封装包括一个基板和多个穿过基板的散热过孔。基板包括一个电源层、一个接地层、和一个位于电源层和接地层之间的绝缘层。电源层包括一个电源区和一个非电源区，它们被相互隔开。散热过孔连接到电源板的非电源区和接地层。
IC封装还可以包括多个穿过基板的电源过孔。电源过孔连接到电源层的电源区，但与电源层的非电源区和接地层隔离。接地层可以包括多个过孔隔离区。电源层经过过孔隔离区，而没有连接到接地层。过孔隔离区可以是在接地层里形成的孔洞。
IC封装还可以包括多个穿过基板的信号过孔。信号过孔与电源层和接地层隔离。接地层可以包括多个过孔隔离区。信号过孔经过过孔隔离区，而没有连接到接地层。过孔隔离区可以是在接地层里形成的孔洞。电源层可以包括多个过孔隔离区。信号过孔经过过孔隔离区，而没有连接到电源层。过孔隔离区可以是在电源层里形成的孔洞。
附图说明
图1显示一个传统的BGA封装；
图2显示具有内部散热结构的BGA封装的一个实施例。
图3是图2BGA封装的电源层的俯视图。
图4是图2BGA封装的接地层的俯视图。
图5显示具有内部散热结构的BGA封装的另一个实施例。
图6显示一个具有内部散热结构的SiP的实施例。
具体实施例详述
现参照图2，描述了一个BGA封装100的实施例。BGA封装100包括一个基板102、多个穿过基板102的过孔、多个外部连接接线端如焊接球、一个在基板102上表面的上传导层112、一个在基板102下表面的下传导层114、一个在上传导层112上的芯片安装胶粘层(导电或不导电)104、和一个贴附在芯片安装胶粘层104上的半导体芯片106。基板102包括一个绝缘层103、一个电源层108、和一个接地层110。半导体芯片106通过焊接线116而电连接到上传导层112。
在上导电层112的顶面上有一个上阻焊层134，在下传导层114的底面上有一个下阻焊层136。上阻焊层134包括多个开口，露出上传导层112的区域以便给芯片106被有线焊接。下阻焊层136包括多个开口，由此焊接球能够被贴附到下传导层114。
绝缘层103是由绝缘材料如玻璃纤维环氧树脂或BT环氧树脂制成。过孔包括多个穿透基板102的散热过孔118、电源过孔120、和信号过孔122，这些将在以下被详细描述。焊接球包括多个散热球124、电源球126、和信号球128。
电源层108和接地层110位于基板102内。在所述实施例里，电源层108和接地层110位于上传导层112定义的那一层和下传导层114定义的另一层之间。电源层108是由具有良好导电性的金属(如铜)制成。电源层108包括一个电源区130和一个非电源区132。电源区130和非电源区132是相互隔开的，如图3所示。电流仅经过电源区130以提供电能给芯片106，但不经过非电源区132。接地层110通常平行于电源层108，它是由一个或多个具有良好导电性的金属(如铜)制成，用于电流排放。
散热过孔118提供路径用于散发在BGA封装110内产生的热。散热过孔118通过在下传导层114上的散热球焊盘而连接到散热球124。散热过孔118同时连接到电源层108的非电源区132和接地层110，而形成一个内部散热结构。内部散热结构将中央区内的半导体芯片106产生的热散发到整个封装100。从而，增强了封装100的热性能。在所述实施例里，散热过孔118也连接到上传导层112。
散热过孔118的内壁可以镀有良好热传导性的金属。或者，为了提高散热能力(热传导)，散热过孔118可以充满具有良好热传导性的金属。散热过孔118的数目是可变的，取决于BGA封装的类型。
电源过孔120提供电流路径供以电力给芯片106。电源过孔120通过在下传导层114上的电源球焊盘而连接到电源球126。电源过孔120没有连接到接地层110，而是连接到电源层108的电源区130。如图4所示，在接地层110上可以生成多个过孔隔离区140，从而电源过孔120与接地层110隔离。在所述实施例里，过孔隔离区140是在接地层110里形成的孔洞，电源过孔120从中经过。过孔隔离区140的尺寸稍微比电源过孔120的尺寸大。
电源过孔120的内壁可以镀有良好导电性的金属，如铜。或者，电源过孔120可以充满具有良好导电性的金属。
信号过孔122提供信号路径给芯片106进行通信。信号过孔122通过在上传导层112上的焊接线116和焊盘而连接到芯片106。信号过孔122通过在下传导层114上的信号球焊盘也连接到信号球128。信号过孔122既没有连接到接地层110，也没有连接到电源层108。如图3和4所示，在电源层109和接地层110上可以分别生成多个过孔隔离区142和144，从而信号过孔122与电源层108和接地层110隔离。在所述实施例里，过孔隔离区142和144是在电源层108和接地层110上形成的孔洞，信号过孔122从中经过。过孔隔离区142和144的尺寸稍微比信号过孔122的尺寸大。
信号过孔122的内壁可以镀有良好导电性的金属，如铜。或者，信号过孔122可以充满具有良好导电性的金属。
现参照图5，描述了BGA封装200的另一个实施例。BGA封装200包括一个基板202、多个穿过基板202的传导过孔、多个外部连接接线端如焊接球、一个在基板202上表面上的上传导层212、一个在基板202下表面上的下传导层214。基板202包括一个绝缘层203、一个电源层208、和一个接地层210。
在所述实施例里，在基板202的中央位置生成一个孔洞207，从而露出一部分的接地层210。在接地层210的露出部分，而不是在上传导层212，直接形成一个芯片安装胶粘层(导电或不导电)204，如图2所示。半导体芯片206安装在芯片安装胶粘层204上，并通过焊接线216电连接到上传导层212和接地层210。从而，与图2里的封装100相比，封装200的结构被简化。
在上传导层212的顶面上有一个上阻焊层234，在下传导层214的底面上有一个下阻焊层236。上阻焊层234包括多个开口，露出上传导层212的区域以便芯片206有线焊接。下阻焊层236包括多个开口，由此焊接球可以贴附到下传导层214。
绝缘203是由绝缘材料如玻璃纤维环氧树脂或BT环氧树脂制成。传导过孔包括多个穿过基板202的散热过孔218、电源过孔220、和信号过孔222，这些将在以下被详细描述。焊接球包括多个散热球224、电源球226、和信号球228。
电源层208和接地层210位于基板202内。在所述实施例里，电源层208和接地层210位于上传导层212定义的那一层和下传导层214定义的另一层之间。电源层208是由良好传导性(如铜)的金属制成。电源层208包括一个电源区230和一个非电源区232。电源区230和非电源区232是相互隔离的。电流仅经过电源区230而提供电能给芯片206，而不经过非电源区232。接地层210通常平行于电源层208，并由一个或多个具有良好传导性的金属制成，用于电流排放。电源层和接地层的详细结构可以参照图3和图4，其中参考编号108和110分别代表在封装200里的电源层208和接地层210。
散热过孔218提供路径用来散发在BGA封装200内产生的热。散热过孔218通过下传导层214上的散热球焊盘而连接到散热球224。散热过孔218同时连接到电源层208的非电源区232和接地层210，而形成一个内部散热结构。内部散热结构将中央区内的半导体芯片206产生的热散发到整个封装200。从而，增强了封装200的热性能。在所述实施例里，由于芯片206贴附到接地层210，与图2的实施例相比，缩短了散热路径。从而，在所述实施例里能够有效地散发由芯片206产生的热。
散热过孔218的内壁可以镀有良好热传导性的金属。或者，为了提高散热能力(热传导)，散热过孔218可以充满具有良好热传导性的金属。散热过孔218的数目是可变的，取决于BGA封装的类型。
电源过孔220提供电流路径供以电力给芯片206。电源过孔220通过下传导层214上的电源球焊盘而连接到电源球226。电源过孔220没有连接到接地层210，而是连接到电源层208的电源区230。在接地层210上可以生成多个过孔隔离区，从而电源过孔220与接地层210隔离。在所述实施例里，过孔隔离区是在接地层210上形成的孔洞，电源过孔220从中经过。过孔隔离区的尺寸稍微比电源过孔220的尺寸大。
电源过孔220的内壁可以镀有良好导电性的金属，如铜。或者，电源过孔220可以充满具有良好导电性的金属。
信号过孔222提供信号路径给芯片206进行通信。信号过孔222通过上传导层212上的焊接线216和焊盘连接到芯片206。信号过孔222通过下传导层214上的信号球焊盘也连接到信号球228。信号过孔222既没有连接到接地层210，也没有连接到电源层208。如图3和4所示，在电源层208和接地层210上可以分别生成多个过孔隔离区，从而信号过孔222与电源层208和接地层210隔开。在所述实施例里，过孔隔离区是在电源层208和接地层210上形成的孔洞，信号过孔222从中经过。过孔隔离区的尺寸稍微比信号过孔222的尺寸大。
信号过孔222的内壁可以镀有良好导电性的金属，如铜。或者，信号过孔222可以充满具有良好导电性的金属。
现参照图6，描述了一个系统级封装(SiP)300的实施例。SiP 300包括一个基板302、多个穿过基板302的传导过孔、多个外部连接接线端如焊接球、一个在基板302上表面上的上传导层312、个在基板302下表面上的下传导层314、一个在上传导层312上的芯片安装胶粘层(传导和不传导)304、和多个贴附在芯片安装胶粘层304的叠层半导体芯片306。基板302包括一个绝缘层303、一个电源层308、和一个接地层310。叠层芯片306通过焊接线316而电连接到上传导层312。多个离散部件311被安装并电连接到上传导层312。
在上传导层312的顶面上有一个上阻焊层334，在下传导层314的底面上提供一个下阻焊层336。上阻焊层334包括多个开口，露出上传导层312的区域给叠层芯片316以便有线焊接。下租焊层336包括多个开口，由此焊接球能够贴附到下传导层314。
绝缘层303是由绝缘材料如玻璃纤维环氧树脂或BT环氧树脂制成。传导过孔包括多个穿过基板302的散热过孔318、电源过孔320、和信号过孔322，这些将在以下被详细描述。焊接球包括多个散热球324、电源球326、和信号球328。
电源层308和接地层310位于基板302内。在所述实施例里，电源层308和接地层310位于上传导层312定义的那一层和下传导层314定义的另一层之间。电源层308是由良好传导性的金属(如铜)制成。电源层308包括一个电源区330和一个非电源区332。电源区330和非电源区332是相互隔开的。电流仅通过电源区330提供电能给芯片306，而不经过非电源区332。接地层310通常平行于电源层308，其是由一个或多个具有良好传导性的金属(如铜)制成，用于电流排放。电源层和接地层的详细结构可以参照图3和图4，其中参考编号108和110分别代表封装300内的电源层308和接地层310。
散热过孔318提供路径用来散发在SiP 300内产生的热。散热过孔318通过下传导层314上的散热球焊盘而连接到散热球324。散热过孔318同时连接到电源层308的非电源区332和接地层310，而形成一个内部散热结构。内部散热结构将叠层芯片306产生的集中在中央区的热散发到整个SiP 300封装。从而，增强了SiP 300的热性能。在所述实施例里，散热过孔318也连接到上传导层312。
散热过孔318的内壁可以镀有良好导热性的金属。或者，为了提高散热能力(热传导)，散热过孔318可以充满具有良好导热性的金属。散热过孔318的数目是可变的，取决于SiP的类型。
电源过孔320提供电流路径供以电力给叠层芯片306。电源过孔320通过下传导层314上的电源球焊盘而连接到电源球326。电源过孔320没有连接到接地层310，而是连接到电源层308的电源区330。可以在接地层上生成多个过孔隔离区，从而电源过孔320与接地层310隔开。在所述实施例里，过孔隔离区是在接地层310上形成的孔洞，电源过孔320从中经过。过孔隔离区的尺寸稍微比电源过孔320大。
电源过孔320的内壁可以镀有良好导电性的金属，如铜。或者，电源过孔320可以充满具有良好导电性的金属。
信号过孔322提供信号路径给叠层芯片306进行通信。信号过孔322通过上传导层312上的焊接线316和焊盘而连接到堆栈芯片306。信号过孔322通过下传导层314上的信号球焊盘也连接到信号球328。信号过孔322既没有连接到接地层310，也没有连接到电源层308。在电源层308和接地层310里可以分别生成多个过孔隔离区，从而信号过孔322与电源层308和接地层310隔开。在所述实施例里，过孔隔离区是在电源层308和接地层310上形成的孔洞，信号过孔322从中经过。过孔隔离区的尺寸稍微比信号过孔322的尺寸大。
信号过孔322的内壁可以镀有良好导电性的金属，如铜。或者，信号过孔322可以充满良好电传导性的金属。
尽管图2-6里显示的实施例是BGA封装和SiP，应该理解，以上所述的内部散热结构可以被应用到LGA和其它IC封装。
以上已经描述和指出了被应用到优选实施例的本发明的基本新颖特征，应该理解，本领域有经验的技术人员可以在所述实施例的格式和细节上作出各种简化和替换以及改变，而不会偏离本发明的精神。本发明不受制于以上所述的实施例，其仅是作为例子被描述，可以在附加权利要求定义的保护范围内作出若干改变。

Claims (20)

1.一种IC封装，包括：
一个基板，包括一个电源层、一个接地层、和一个位于电源层和接地层之间的绝缘层；电源层包括一个电源区和一个非电源区，它们被互相隔开；
多个穿过基板的散热过孔，散热过孔连接到电源层的非电源区和接地层；
多个穿过基板的电源过孔，电源过孔连接到电源层的电源区，但与电源层的非电源区和接地层隔开；和
多个穿过基板的信号过孔，信号过孔与电源层和接地层隔开。
2.根据权利要求1所述的IC封装，还包括多个散热球，其中散热过孔连接到散热球。
3.根据权利要求1所述的IC封装，还包括多个电源球，其中电源过孔连接到电源球。
4.根据权利要求1所述的IC封装，还包括多个信号球，其中信号过孔连接到信号球。
5.根据权利要求1所述的IC封装，其中：
接地层包括多个过孔隔离区；和
电源过孔和信号过孔经过过孔隔离区，而没有连接到接地层。
6.根据权利要求5所述的IC封装，其中过孔隔离区是在接地层里形成的孔洞。
7.根据权利要求1所述的IC封装，其中：
电源层包括多个过孔隔离区；和
信号过孔经过过孔隔离区，而没有连接到电源层。
8.根据权利要求7所述的IC封装，其中过孔隔离区是在电源层里形成的孔洞。
9.根据权利要求1所述的IC封装，还包括：
一个在基板上表面上的上传导层；和
至少一个半导体芯片位于上传导层上。
10.根据权利要求1所述的IC封装，还包括至少一个半导体芯片，其中一部分接地层露出来，半导体芯片被布置在露出的接地层上。
11.根据权利要求1所述的IC封装，还包括一个在基板下表面上的下传导层。
12.一种IC封装，包括：
一个基板，包括一个电源层、一个接地层、和一个位于电源层和接地层之间的绝缘层；电源层包括一个电源区和一个非电源区，它们被相互隔开；和
多个穿过基板的散热过孔，散热过孔连接到电源层的非电源区和接地层。
13.根据权利要求12所述的IC封装，还包括多个穿过基板的电源过孔，其中电源过孔连接到电源层的电源区，但与电源层的非电源区和接地层隔开。
14.根据权利要求13所述的IC封装，其中：
接地层包括多个过孔隔离区；和
电源过孔经过过孔隔离区，而没有连接到接地层。
15.根据权利要求14所述的IC封装，其中过孔隔离区是在接地层里形成的孔洞。
16.根据权利要求12所述的IC封装，还包括多个穿过基板的信号过孔，其中信号过孔与电源层和接地层隔开。
17.根据权利要求16所述的IC封装，其中：
接地层包括多个过孔隔离区；和
信号过孔经过过孔隔离区，而没有连接到接地层。
18.根据权利要求17所述的IC封装，其中过孔隔离区是在接地层里形成的孔洞。
19.根据权利要求16所述的IC封装，其中：
电源层包括多个过孔隔离区；和
信号过孔经过过孔隔离区，而没有连接到电源层。
20.根据权利要求19所述的IC封装，其中过孔隔离区是在电源层里形成的孔洞。
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