CN101325310B - Light emitting device and method of fabricating a light emitting device - Google Patents

Light emitting device and method of fabricating a light emitting device Download PDF

Info

Publication number
CN101325310B
CN101325310B CN2008101254599A CN200810125459A CN101325310B CN 101325310 B CN101325310 B CN 101325310B CN 2008101254599 A CN2008101254599 A CN 2008101254599A CN 200810125459 A CN200810125459 A CN 200810125459A CN 101325310 B CN101325310 B CN 101325310B
Authority
CN
China
Prior art keywords
film
light
chip
end surface
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008101254599A
Other languages
Chinese (zh)
Other versions
CN101325310A (en
Inventor
神川刚
川口佳伸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Fukuyama Laser Co Ltd
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of CN101325310A publication Critical patent/CN101325310A/en
Application granted granted Critical
Publication of CN101325310B publication Critical patent/CN101325310B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

The present invention comprises a light absorption film 5 which is formed on the outermost surface of an end surface on the light emitting side of a chip used in a laser device, typically, a laser chip 1 and which absorbs part of the light emitted. By forming this light absorption film 5, the collection and accumulation of pollutants which are caused by reacting with light emitted are curbed.

Description

Light-emitting device and manufacture method thereof
Technical field
The present invention relates to light-emitting device and manufacture method thereof, more specifically, relate to nitride semiconductor laser device for typically having the semiconductor light-emitting apparatus and the manufacture method thereof of bob optical wavelength.
Background technology
Because the band structure and the chemical stability of nitride-based semiconductor, (for example comprise AlN, GaN or InN etc., the solid solution that perhaps comprises them is such as AlGaN or InGaN etc. for the expectation nitride-based semiconductor.They are referred to as nitride-based semiconductor in this application) as the material of light-emitting device or power device, and the light source that these nitride-based semiconductors are applied to information-recording apparatus has also caused people's attention, and these nitride-based semiconductors are compounds of III family element al, Ga or In etc. and V group element N.
By cleavage with cut apart the wafer that forms by at substrate upper strata azide semiconductor layer and electrode, obtain to become and be used for the chip of laser of laser device by such nitride system semiconductor.And, on the end surface that obtains by the cleavage wafer, particularly on the emission side end surface, forming diaphragm (antiradar reflectivity film), this diaphragm has material (for example, the SiO for optical transparency 2Perhaps Al 2O 3Deng) individual layer, perhaps by making up the multilayer of such negligible amounts that individual layer obtained.On the other hand, form the diaphragm (high reflection film) of big reflectivity on respect to the end surface of this emission side end surface, the diaphragm of this big reflectivity comprises Al 2O 3And Ta 2O 5Deng multilayer laminated.For the diaphragm of formation like this, it is effectively luminous that reflectivity is adjusted into permission, and prevent the change of the character of the end surface that caused by chemical reactions such as for example oxidations.
Yet, there is such problem, diaphragm adheres to and assembles pollutant thereon, and it is especially remarkable to have problem such in the light-emitting device of 500nm or shorter short-wavelength light in emission.This problem causes like this; be present near the chip of light-emitting device siloxanes and hydrocarbon etc. by short-wavelength light polymerization from the chip emission with Si and O combination; and adhere to and accumulate on the diaphragm, this also is a problem to the light-emitting device that adopts above-mentioned nitride-based semiconductor and emission short-wavelength light.
The problem of the pollutant that chip adheres to thereon and assembles is described based on the schematic side elevation of chip of laser shown in Figure 9.Chip of laser 100 shown in Figure 9 has above-mentioned antiradar reflectivity film 101 and highly reflecting films 102 as diaphragm; and pass antiradar reflectivity film 101 from the light of the end surface emission of active layer 103 on chip of laser 100 emission side and advance, and towards by the direction that is substantially perpendicular to end surface shown in the dotted line.At this moment, the light reaction of pollutant 104 and emission is adhered to and is accumulated on the antiradar reflectivity film to absorb the light of being launched.Therefore, must increase the emission measure that drive current keeps light.The life-span of device has been shortened in this increase of drive current, and brings the unsteadiness of light-emitting device operation.
As so concrete example, in Figure 10, illustrate the The performance test results of laser device with chip of laser shown in Figure 9 100.Figure 10 makes light output remain on 15mW and the temperature chart when being 75 ℃ when controlling and driving electric current in the continuous oscillation of the laser device with 405nm oscillation wavelength.As shown in figure 10, because the pollutant 104 behind starting of oscillation in the atmosphere adheres to and assembles very thickly gradually, so drive current increases along with the passage of driving time.Specifically, after the operation beginning, current value is about 60mA, but is increased to about 150mA when 500 hours driving time, promptly surpasses twice.In addition, drive current is that unit fluctuates up and down with tens milliamperes, and drives fluctuation of service.
For fear of such problem, as example, the invasion (seeing patent documentation 1) that comes contaminant restraining by with the atmosphere of cover gas-tight seal chip and control gas-tight seal has been proposed with pot type encapsulation (can package).In addition, also proposed before gas-tight seal, to remove the method for pollutant, and the auxiliary absorption pollutant down of the adsorbent that is provided with removes the method (seeing patent documentation 2 and 3) of pollutant in the encapsulation of gas-tight seal by plasma clean.
[patent documentation 1] JP-A-2004-289010
[patent documentation 2] JP-A-2004-040051
[patent documentation 3] JP-A-2004-014820
Yet these methods not only require the strict control of the atmosphere of gas-tight seal, and require the strictness control to airtight sealed structure, and this makes the volume of light-emitting device become big.Therefore, because the volume of light-emitting device is big, be difficult to adopt this device at the light source that is used for information-recording apparatus, this light source typically is the optical pick-up (optical pickup) that is used for compact disk (CD) and digital universal disc (DVD).Although do not need the light-emitting device with posture encapsulation (frame package) of gas-tight seal can be easy to be applied to optical pick-up, but as shown in Figure 9 along with operating time passage pollutant 104 adheres to and assembles, the irregular operation that this has shortened the life-span of device and has caused device.
In addition, even for the encapsulated type of gas-tight seal chip wherein, owing in encapsulation, need to adopt organic bond, for example Ag cream, silica-based or epoxy adhesive, the component of these adhesives is also volatilized and is become pollutant.Remove pollutant by irradiation before gas-tight seal with plasma etc., perhaps by having-15 ℃ dew point or more carrying out gas-tight seal in the dry air of low temperature, can prevent to a certain extent that pollutant from adhering to and assembling, but because need plasma irradiating and control trouble so manufacturing process becomes for the strictness of the atmosphere that seals.In addition, because volatilizing, the heat that pollutant produces owing to the run duration at device enters the atmosphere of sealing, so be difficult to prevent fully adhering to and assembling of pollutant.In addition, be necessary because be used to confirm to have carried out whether really the process of gas-tight seal, and because do not have the light-emitting device of gas-tight seal to abandon as waste product really, so reduced output.
Summary of the invention
In order to overcome above-mentioned traditional problem, one of purpose of the present invention provides such light-emitting device, and this light-emitting device reduces and adheres to and accumulate in pollutant on the chip, and the life-span is long and stable, do not need the structure of gas-tight seal, and make gas-tight seal need strict control easily and not; The present invention also provides the method for making this device.
To achieve these goals, the light-emitting device according to one aspect of the invention comprises:
Chip is used for luminous; With
Light absorping film is formed on the outmost surface of the end surface that passes through from the light emission of this chip, with the light of absorbent portion branch emission.
Manufacture method according to the light-emitting device of one aspect of the invention comprises following step:
First step wherein forms diaphragm, to protect this end surface on the part as the end surface that passes through from the Laser emission of chip of laser; And
Second step wherein behind first step, forms light absorping film on the surface of diaphragm, with absorption portion from the chip of laser emitted laser.
In addition, light-emitting device according to a further aspect of the invention comprises:
Chip of laser is used for luminous;
Metal film, by the metal manufacturing and be formed on the outmost surface of end surface of this chip, from the light emission of this chip by this end surface.
According to structure of the present invention, because being formed on light, light absorping film launches the light of launching with the absorbent portion branch on the end of passing through, so can contaminant restraining adhere to and accumulate on the light absorping film, promptly contaminant restraining adheres to and accumulates on the end that the light emission of selfluminous device passes through.Therefore, can prevent the minimizing of adhering to and assemble the light emitted light output that causes by such pollutant.In addition, keep light output because needn't increase drive current, so can prolong the life-span of light-emitting device.
Description of drawings
Fig. 1 is the schematic side elevation according to the chip of laser of the embodiment of the invention;
Fig. 2 is the chart of showing according to the laser device The performance test results of the embodiment of the invention;
Fig. 3 is the schematic side elevation with chip of laser of AlN film;
Fig. 4 is a chart of showing the The performance test results of the laser device with chip of laser shown in Figure 3;
Fig. 5 A is the perspective schematic view according to the chip of laser of first embodiment of the invention;
Fig. 5 B is the schematic side elevation according to the chip of laser of first embodiment of the invention;
Fig. 6 is the perspective schematic view according to the laser device of first embodiment of the invention;
Fig. 7 is the perspective schematic view according to the laser device of second embodiment of the invention;
Fig. 8 is the perspective schematic view according to the laser device of third embodiment of the invention;
Fig. 9 is the schematic side elevation of conventional laser chip;
Figure 10 is a chart of showing conventional laser device performance test result;
Figure 11 is the perspective schematic view according to the chip of laser of thriteenth embodiment of the invention;
Figure 12 is the microphoto of showing according to the chip of laser cross section of thriteenth embodiment of the invention.
Embodiment
Hereinafter, will embodiments of the invention be described based on Fig. 1 to 8.At first describe basic structure of the present invention, describe various embodiment then.
Basic structure: use Fig. 1 that basic structure of the present invention is described.Fig. 1 is the schematic side elevation of showing according to the topology example of chip of laser of the present invention, and corresponding to the Fig. 9 that shows the conventional laser chip structure.
As shown in Figure 1, in the present invention, antiradar reflectivity film 3 is formed on the end surface of emission side of chip of laser 1, active layer 2 emission laser by this chip of laser 1, and high reflection film 4 is formed on the end surface with respect to the emission side end surface, especially, light absorping film 5 is formed on the surface of the antiradar reflectivity film 3 on the end surface that is formed at emission side.Traditionally, in order not reduce luminous quantity, only have by antiradar reflectivity film 3 to be formed on the end surface of emission side for the made of optical transparency.Yet, in the present invention, be formed on the surface of antiradar reflectivity film 3 by light absorping film 5 to the opaque made of light of being launched.
For example, can be as follows: the metal film that comprises gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), osmium (Os), ruthenium (Ru) or palladium (Pd) etc. as the film of light absorping film 5; The nitride film that comprises the nitride of aluminium (Al), titanium (Ti), zirconium (Zr), yttrium (Y), silicon (Si), niobium (Nb), hafnium (Hf), tungsten (W) or tantalum (Ta) etc.; And oxygen deprivation film (oxygen depleted film), to be the oxide of aluminium (Al), titanium (Ti), zirconium (Zr), yttrium (Y), silicon (Si), niobium (Nb), hafnium (Hf), tungsten (W) or tantalum (Ta) etc. and its component depart from the direction of the component that tails off from its stoichiometric compositions to oxygen wherein this oxygen deprivation film.
Next, use Fig. 2 explanation to have the operation example of the laser device of the chip of laser that is formed with light absorping film 5.Fig. 2 is the chart of The performance test results of showing the laser device of the chip of laser 1 with structure shown in Figure 1, and corresponding to Figure 10 of the The performance test results of showing the conventional laser apparatus.In addition, Fig. 2 is a chart in such cases, wherein in air atmosphere in the continuous oscillation of the laser device of oscillation wavelength with 405nm the controlling and driving electric current make that light output remains on 20mW and temperature is 75 ℃, chip of laser does not have gas-tight seal here.
As shown in Figure 2,, can suppress increase with the drive current of driving time passage by on the surface of antiradar reflectivity film 3, forming light absorping film 5, and also can the stabilized driving electric current.In this embodiment, although thereby the condition that light output is set at than the big 15mW among Figure 10 is made that the reaction of pollutant is easy, there are not much fluctuations from the starting of oscillation drive current, promptly be constant and be stabilized in about 80mA.
This can be understood as, and the light that part is launched is absorbed by light absorping film 5, and generation heat therefrom, and pollutant evaporation once more owing to heat perhaps prevents their gatherings, has therefore suppressed adhering to and assembling of pollutant.Because the adhering to and assemble of contaminant restraining, even laser device after long-time the driving, also can prevent because the increase of the drive current that the minimizing of light quantity causes, and the life-span of prolongation laser device.
In addition, by in chip of laser 1, forming light absorping film 5,, also can suppress because the increase of the caused drive current of passage of driving time even install and do not have gas-tight seal with various encapsulation.And, therefore also can encapsulate the laser device of emission short-wavelength light and do not have gas-tight seal, and laser device can be made compactly.In addition, even adopt the encapsulation need gas-tight seal because for air-proof condition for example the strictness control of dew point etc. be unnecessary, so can be easy to make laser device.
In the embodiment of explanation after a while, describe the concrete structure and the effect of the chip of laser that is formed with light absorping film 5 in detail.In addition, the material of above-mentioned light absorping film 5 is an example, and other material can be used for light absorping film 5.And light absorping film 5 can be a multilayer film.
The present invention can be applied to launch the common light-emitting device of short-wavelength light, and except chip of laser 1, also can be applied to the chip of light-emitting device, for example, and light-emitting diode or super-radiance light emitting diode (superluminescence diode) etc.In addition, when being applied to chip of laser, the present invention not only can be applied to aforesaid from the luminous edge-emitting laser chip of end surface (it is perpendicular to every layer growing surface on the substrate), and can be applied to from the surface (it is parallel on the substrate every layer growing surface) radiative surface-emitting laser chip.Under the two situation of edge-emitting laser chip and surface-emitting laser chip,, can prevent that pollutant from adhering to and accumulate on the outmost surface by on the outmost surface of radiative end, forming light absorping film 5.
The present invention also can be applied to the chip with multiple arrangement and emission short-wavelength light.For example, can be applied to holographic laser apparatus (hologram laser device), this holographic laser apparatus has chip of laser and Optical devices for example holographic apparatus and optical pickup apparatus etc., perhaps, can be applied to such chip, this chip is used for being constituted and being launched light-emitting device as the light with a plurality of wavelength of white light by emission short wavelength's chip of light and fluorescent plate.
Except nitride-based semiconductor, the present invention can be applied to the light-emitting device by the made of emission short-wavelength light.For example, the present invention can be applied to the light-emitting device by ZnSe base or zno-based made.
In addition, for example the semiconductor film of the hexagon system of AlN film etc. can be formed directly on the end surface.About such structure, can obtain such effect, adhere to diaphragm and peel off preventing, and because end surface is protected end surface safely by the close attachment of diaphragm, so the operation of device becomes stable when height is exported.Adopt the chart among Fig. 4 to describe these effects.Fig. 4 has showed the The performance test results of the laser device with chip of laser 30, and this chip 30 has such structure, and AlN film 32 wherein shown in Figure 3 is formed on the end surface of emission side, then by Al 2O 3The antiradar reflectivity film of making 33 is formed on the film 32.Fig. 4 is a chart in such cases, and the controlling and driving electric current and does not have gas-tight seal light output being remained on 15mW and temperature is 75 ℃ in the continuous oscillation of the laser device of the oscillation wavelength with 437nm in air atmosphere.
As shown in Figure 4, the chip of laser 30 that is formed with the AlN film on the end surface shown in Figure 3 can stable operation surpasses 1000 hours, even also be not damaged when drive current surpasses 150mA under the light output of 15mW.Because this chip of laser 30 does not provide as shown in Figure 1 light absorping film 5 to be different from effect of the present invention, so drive current increases along with the passage of driving time.Specifically, in 500 hours behind starting of oscillation, drive current has increased the amount of 30mA.Yet,, can prevent that drive current from increasing along with the passage of driving time, as shown in Figure 2 if light absorping film 5 according to the present invention is formed on the surface of antiradar reflectivity film 33 in the structure shown in Figure 3.
And, the reflectivity that is constructed so that high reflection film 4 as shown in Figure 1 when light-emitting device is low to allow a spot of light by high reflection film 4 emissions, and drive current is by the control signal control of feedback based on this a spot of light of being launched, and light absorping film 5 can be formed on the surface of high reflection film 4.
About such structure, because prevented that pollutant from adhering to and assembling on the surface of high reflection film 4, so can accurately produce the light output of control signal.Therefore, can prevent that for the low light level by 4 emissions of the high film of high reflectance be because the misunderstanding of coming the weak output light of selfluminous device,, and so prevent that excessive big electric current is provided to light-emitting device even this is because the adhering to and assembles of pollutant.
As under the situation of light absorping film 5, if metal film is formed directly on the end surface, then electric current is shunted via metal film, and can not flow into active layer at metal film.In addition, no matter whether this film is by the metal manufacturing, all may damage end surface from the heat that light absorping film 5 produces, and therefore light absorping film 5 close end surfaces formation are not preferred.And, because the place of contaminants is the surface of diaphragm 3,4, thus light absorping film 5 be preferably formed in the near surface of diaphragm rather than end surface near, to prevent adhering to and assembling of multi-pollutant more.
Embodiment: next, the embodiments of the invention with above-mentioned basic structure are described.Each embodiment only is an example, and the present invention can have any structure, as long as light absorping film is formed on the outmost surface of radiative end as mentioned above.
First embodiment: at first, use Fig. 5 A and 5B to describe first embodiment.Fig. 5 A is the perspective schematic view of displaying according to the topology example of the chip of laser of first embodiment.Fig. 5 B is the schematic sectional view according to the topology example of the chip of laser of first embodiment.Shown in the perspective view of Fig. 5 A, have according to the chip of laser 10 of present embodiment: resilient coating 12 is layered on the n type GaN substrate 11, and is that the n type GaN of 0.2 μ m forms by thickness; N type outer covering layer 13 is layered on the resilient coating 12, and is the n type Al of 2.3 μ m by thickness 0.06Ga 0.94N forms; N type guide layer (guide layer) 14 is layered on the n type outer covering layer 13, and is that the n type GaN of 20nm forms by thickness; Multiple quantum well active layer 15, by on n type guide layer, replace stacked for the thickness of GaN/InGaN/GaN/InGaN/GaN/InGaN/GaN be that the InGaN of 4nm and GaN that thickness is 8nm form; Protective layer 16 is layered on the multiple quantum well active layer 15, and is that the GaN of 70nm forms by thickness; Current barrier layer 17 is layered on the protective layer 16, and is the p type Al of 20nm by thickness 0.3Ga 0.7N forms; P type outer covering layer 18 is layered on the current barrier layer 17, and by p type Al 0.05Ga 0.95N forms, and the top of this p type outer covering layer 18 has the bar shaped of extending on assigned direction; And p type contact layer 19, be layered on the bar shaped part of p type outer covering layer 18, and be that the p type GaN of 0.1 μ m forms by thickness.
These layers 12 to 19 are formed on the substrate 11 continuously by epitaxial growth.The bar shaped vallum 20 that is made of p type contact layer 19 and part p type outer covering layer 18 forms like this, forms continuously each of the layer 12 to 19 that comprises p type contact layer 19 by epitaxial growth, removes p type outer covering layer 18 and p type contact layer 19 by etching then.Have the oscillation wavelength of 405nm according to the chip of laser 10 of present embodiment, and the width of vallum is 1.2 μ m to 2.4 μ m, for example about 1.5 μ m.In the broad area laser that is used for throwing light on etc., the width of vallum can be 3 μ m to 50 μ m.In addition, shown in Fig. 5 A, vallum 20 can have platform shape (mesa shape).
Chip of laser 10 has: dielectric film 21, and by SiO 2/ TiO 2Form, and form the both sides of filling vallum 20; P electrode 22 is made up of Pd/Mo/Au, and is formed on vallum 20 and the dielectric film; And n electrode 23, form by Hf/Al, and be formed on substrate 11 and be formed with on the surface of surface opposite of resilient coating 12.
As illustrated after a while, go up formation diaphragm and the light absorping film that is formed on the diaphragm on the surface (surfaces A and B) of the direction that is substantially perpendicular to vallum 20 extensions.In the present embodiment, as shown in Figure 1, antiradar reflectivity film 3 and light absorping film 5 are formed on as on the surfaces A of luminous end surface, and high reflection film 4 is formed on the surperficial B.
These nitride semiconductor layers 12 to 19 that are arranged in the chip of laser 10 can be stacked with the technology of for example metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE) or hydride gas-phase epitaxy (HVPE) etc.Dielectric film 21 and diaphragm 3,4 can form with the various sputtering technologies or the plasma enhanced chemical vapor deposition (PECVD) of for example magnetron sputtering or electron cyclotron resonace (ECR) sputter etc.Metal film can form with for example various evaporations or the aforesaid various sputtering technology of electron beam (EB) evaporation or resistance heating evaporation etc. such as electrode 21,22.Light absorping film 5 can be selected from a kind of formation of these technologies with the kind according to material that light absorping film adopts.
The structure of diaphragm and light absorping film is shown in the end view of Fig. 5 B.Shown in Fig. 5 B, following film is formed on the surfaces A as antiradar reflectivity film 3 according to following order: aluminum oxynitride (AlO xN 1-x(wherein, 0＜x＜1)) film 3a, silicon nitride (SiN) film 3b and aluminium oxide (Al 2O 3) film 3c, and AlO xN 1-xThe thickness of film 3a is 20nm, and the thickness of SiN film 3b is 200nm, and Al 2O 3The thickness of film 3c is 140nm.Light absorping film 5 is made up of palladium (Pd) and thickness is 3.5nm.
On the other hand, high reflection film 4 is formed on the surperficial B according to following order: AlO xN 1-xFilm 4a, SiN film 4b and four groups of films, every group of film is all by silicon dioxide (SiO 2) film 4c and titanium oxide (TiO 2) film 4d composition.In addition, SiO 2Film 4e is formed on the 4th TiO 2On the film 4d.AlO xN 1-xThe thickness of film 4a is 20nm, and the thickness of SiN film 4b is 80nm, every group SiO 2The thickness of film 4c is 71nm, and TiO 2The thickness of film 4d is 46nm, and is formed on the 4th TiO 2SiO on the film 4d 2The thickness of film 4e is 142nm.
Here, the example as forming diaphragm 3,4 and light absorping film 5 illustrates such situation, and wherein the ECR sputter is used for diaphragm 3,4, and the EB evaporation is used for light absorping film 5.At first, in order to form antiradar reflectivity film 3 on the end surface of emission side, the bar (bar) that obtains by the cleavage wafer is inserted in the film formation chamber of ECR sputtering equipment.Here, a bar has the whole each other a plurality of chip of laser 10 as shown in Figure 5 that connect, and a plurality of chip of laser 10 are connected to each other on the line of the direction that is substantially perpendicular to the ridge bearing of trend, and its surfaces A is in alignment with each other (align), and surperficial B also is like this.This cut apart component from chip to obtain chip of laser 10.This can be cut apart before forming diaphragm.
After this inserted the ECR sputtering equipment, nitrogen was introduced with the flow velocity of 5.2ccm, and oxygen is also introduced with the flow velocity of 0.1ccm.And in order to produce plasma, argon gas is introduced with the flow velocity of 20.0ccm.In addition, the radio frequency of 500W (RF) power is applied to the Al target, and the microwave power that applies 500W to be producing argon plasma, and therefore forms AlO xN 1-xFilm 3a, wherein x can control by the flow velocity of appropriate change nitrogen and oxygen.
Next, target is changed to Si, and nitrogen is introduced to form SiN film 3b with the flow velocity of 5ccm.And target is changed to Al once more, and oxygen is introduced to form Al with the flow velocity of 5.8ccm 2O 3Film 3c.At this moment, also introduce argon gas with the flow velocity of 20.0ccm, the RF power of 500W is applied to Si and Al target, and the microwave power that applies 500W is to produce argon plasma.
Then, the bar that is formed with antiradar reflectivity film 3 on it takes out from the ECR sputtering equipment, and is being formed in the EB evaporation equipment under about 150 ℃ temperature by the light absorping film 5 that Pd forms.Substitute the EB evaporation equipment, can adopt the ECR sputtering equipment on antiradar reflectivity film 3, to form light absorping film 5 continuously.
Similar ground forms high reflection film 4.Specifically, adopt the ECR sputtering equipment, form AlO continuously xN 1-xFilm 4a, SiN film 4b, four groups of SiO 2Film 4c and TiO 2Film 4d, SiO 2Film 4e.Then, cut apart be formed with diaphragm 3,4 and light absorping film 5 on it bar to obtain chip of laser shown in Figure 5.
Next, the example of the laser device of the chip of laser 10 that acquisition like this is installed is described.In the present embodiment, adopt Fig. 6 to illustrate that chip is installed in the situation in the posture encapsulation that does not have gas-tight seal.Fig. 6 is the perspective schematic view of the laser device in the present embodiment.
As shown in Figure 6, the laser device in the present embodiment 60 has: chip of laser 10; Sub-fixed mount (sub-mount) 61, fixed chip 10 thereon; Framework 62, the stator fixed mount 61 thereon; Paired heat radiating fin 63, integrally two ends with framework 62 provide; Lead pin (lead pin) 64, power supply is provided to chip of laser 10 by lead pin; And resin mold 65, integrally support lead pin 64a to 64c.
Sub-fixed mount 61, framework 62 and heat radiating fin 63 are made by for example metal material such as copper or iron, and the heat that is produced by chip of laser 10 is transmitted to framework 62 and heat radiating fin 63 with by radiation via sub-fixed mount 61.In the present embodiment, arranged three lead pin 64a to 64c: central tap pin 64b is connected to framework 62, and two lead pin 64a at two ends and 64c are fixing integrally to form with framework 2 by resin mold 65.
And, the result that the chart of the Fig. 2 by being used for illustrating basic structure of the present invention has been showed the driving test of continuous oscillation, power supply is provided to the chip of laser 60 of structure like this in this drivings is tested.Even chip of laser 60 does not have gas-tight seal, also can prevent the adhering to and assemble of pollutant that the increase with the drive current of the passage of driving time causes, short device lifetime and the operation of unsettled device.
In the present embodiment, because the structure of gas-tight seal chip of laser 10 is dispensable, so laser device 60 can be made compactly.Therefore, laser device 60 can be easy to be applied to the light source that is used for information-recording apparatus, typically is the optical pick-up of CD and DVD.
Second embodiment: next, adopt Fig. 7 that second embodiment is described.In the present embodiment, chip of laser is installed in the pot type encapsulation that needs gas-tight seal, and Fig. 7 is the perspective view according to the laser device of present embodiment.The structure of the chip of laser 10a that is adopted in the present embodiment is almost identical with structure shown in Figure 5 among first embodiment, difference is, the reflectivity of high reflection film 4 is 70% to 80%, promptly carried out Change In Design so that the quantity of film that constitutes high reflection film 4 less than chip of laser 10 shown in Figure 5, and changes the thickness of one or more films of high reflection film 4.
In the present embodiment, light absorping film not only is formed on the antiradar reflectivity film, and is formed on the high reflection film.This film and first embodiment is similar is made up of Pd, and thickness is 4nm.
As shown in Figure 7, the laser device 70 according to present embodiment has: chip of laser 10a; Sub-fixed mount 71, fixed laser chip 10a thereon; Block part (block portion) 72, the stator fixed mount 71 thereon; Photodiode 73, the light of accepting to launch via the high reflection film side of chip of laser 10a is to produce control signal; Pin 75a is electrically connected to photodiode 73 via distribution 74a; Pin 75b is electrically connected to chip of laser 10a via distribution 74b; Core print seat (stem) 76, block part 72 and photodiode 73 are installed on the surface of core print seat, and arrange pin 75b and 75a by surface of core print seat and another apparent surface of core print seat; Pin 75c is connected to another surface of core print seat 76, with the public electrode as photodiode 73 and chip of laser 10a; Lid (cap) 77, a surface that is connected to core print seat 76 is used for gas-tight seal; And glass window 78, be arranged on and cover in 77, and the light of launching via the antiradar reflectivity film of chip of laser 10a passes this glass window.Block part 72 and core print seat 76 are integrally formed with one another, and are made by for example metal material such as copper or iron.In addition, lid 77 and pin 75a to 75c are also made by metal material.
In this structure, being connected of chip of laser 10a and sub-fixed mount 71 adopts scolder to carry out, being connected and photodiode 73 and carrying out being connected with Ag cream of core print seat 76 of sub-fixed mount 71 and block part 72, and their electrical connections.Because Ag cream comprises organic bond, so although be connected to core print seat 76 and carry out gas-tight seal by covering 77, organic substance still is suspended in the sealing atmosphere.And, in the structure of conventional laser apparatus, become pollutant and adhere to and accumulate in problem on the end surface of chip of laser emission side in order to alleviate organic substance, the dew point (dew point) (for example-35 ℃ or lower) of the dry air that strict control will seal.
Yet because light absorping film is formed in the structure of lip-deep present embodiment of diaphragm of chip of laser 10a therein, even organic substance is suspended in the sealing atmosphere, they also are prevented from becoming as mentioned above pollutant and adhere to and assemble.Therefore, can gas-tight seal and not strict control sealing atmosphere and suppress the vapour pressure of organic substance.Therefore, can simplify production technology.In addition,, also prevent adhering to and assembling of pollutant, and can guarantee to encapsulate the degree of inner design freedom even not only adopt Ag cream but also adopt other organic bond for example epoxy radicals or silicon-based adhesive etc.
In the present embodiment, photodiode 73 is accepted light by the highly reflecting films side emission of chip of laser 10a producing control signal, and it is fed back to the driving arrangement (not shown) of laser device 70.Therefore, pollutant also may adhere to and accumulate on the high reflectance side, but in the present embodiment, because light absorping film also is formed on the surface of high reflection film, so prevent adhering to and assembling of pollutant.
Therefore, by the not influence of contaminated thing of light of photodiode 73 acceptance, and prevent that wrong control signal from feeding back to driving arrangement.Particularly, can prevent that to the low light level by high reflection film emission be the misunderstanding that the weak output by laser device 70 causes,, and so prevent that excessive electric current is provided to laser device 70 even this is because the adhering to and assembles of pollutant.
In the structure of laser device shown in Figure 7 70, chip of laser 10a directly is electrically connected with block part 72 each other with sub-fixed mount 71, sub-fixed mount 71.Yet chip of laser 10a and block part 72 can be electrically connected to each other via distribution.
In addition, for being connected of sub-fixed mount 71 and core print seat 76 and being connected of photodiode 73 and core print seat 76, can adopt scolder to replace Ag cream.In such structure, traditionally, because be not included in the consideration of the organic bond volatilization in the Ag cream, so can obtain such result, promptly needn't control the vapour pressure of organic bond in the sealing atmosphere, and the dew point of the dry air of gas-tight seal can loosely be controlled (that is ,-15 ℃ or lower).
On the contrary, in structure of the present invention, because make the control for dew point self become necessary, so, also can simplify production technology significantly even compare with the situation that as present embodiment, adopts scolder replacement Ag cream.In addition, no matter whether adopt Ag cream, insufficient as the gas-tight seal (for example welding) of operculum 77 and core print seat 76, then can not obtain stable operation, therefore, even in this embodiment, need also to confirm that step confirms whether fully gas-tight seal, and yield poorly.Yet, according to structure of the present invention,, also can prevent adhering to and assembling of pollutant even gas-tight seal is insufficient, eliminate the affirmation step and increased output.
The 3rd embodiment: next, adopt Fig. 8 that the 3rd embodiment is described.In the present embodiment, the chip of laser 10 identical with chip of laser 10 among first embodiment is installed in the high heat load that needs gas-tight seal (high heat load is HHL) in the encapsulation.Fig. 8 is the perspective schematic view of the laser device in the present embodiment.This HHL encapsulation is the encapsulation of the high output of permission watt level that is used to throw light on etc.
As shown in Figure 8, the laser device in the present embodiment 80 has: a plurality of chip of laser 10; Sub-fixed mount 81, fixed laser chip thereon; Radiator (heat spreader) 82, stator fixed mount 81 and radiations heat energy thereon; Distributing board 83 provides distribution, and power supply is provided to the parts that are arranged in the encapsulation via this distribution, for example chip of laser 10 etc.; Main part 84, wherein fixed heat sink 81, distributing board and other parts; Lead pin 85, through-body part 84 is to be electrically connected to the device that is arranged in the main part 84; Lid 86 is connected to main part 84 with gas-tight seal; Glass window 87 is provided at and covers in 86, and the light of launching via the antiradar reflectivity film of chip of laser 10 passes this glass window.
In laser device 80, sometimes arrange other distribution, be used to monitor the thermistor of main part internal temperature, the amber ear card (Peltier) that is used to reduce temperature installs and is used to monitor the photodiode of luminous quantity, but in order to be easy to explanation these members is not shown in Fig. 8.A plurality of lead pin 85 are corresponding to they device and chip of laser 10 separately, and power supply is provided to each device to move this device via each lead pin corresponding to device.In addition, also export according to the control signal of internal temperature and light output acquisition, and feed back to the driving arrangement (not shown) of laser device 80 via these lead pin.
In such structure of laser device 80, because multiple arrangement need be fixed on the main body, have and much want bonding place, and therefore need a large amount of adhesives.In addition, because inner distribution is coated with vinyl compound (vinyl), i.e. organic substance is so there are a lot of contamination sources.
Lid 86 and main part 84 be by the metal manufacturing of for example copper or iron etc., and cover 86 with being connected of main part 84 with welding or eutectic welding is carried out.Yet the pot type encapsulation of describing among HHL encapsulation and second embodiment is compared and is difficult to be connected, and often poor sealing takes place, and reduction output.When connecting with solder, connect lip-deep metal oxide film and comprise rosin because be included in the solder and remove to clean the solder flux that connects the surface, i.e. organic substance, this also produces pollutant.
Yet; in the present embodiment, even be formed in the lip-deep structure of diaphragm of chip of laser 10, even organic substance is suspended in inside or bad connection at light absorping film; prevent that also pollutant from adhering to and assembling, and can move this device and move and do not bother.Specifically, can prevent to be connected the output of the reduction that the poor sealing that causes causes, and also can prevent to adhere to and assembles the irregular operation that the drive current that causes increases and installs by pollutant on the chip of laser by lid 86 and main part 84 insufficient.
As in a second embodiment, when photodiode is arranged in the encapsulation to accept the light time by the high reflection film side of chip of laser, chip of laser can be constructed as second embodiment.Specifically, the reflectivity of high reflection film can be fabricated to 70% to 80%, and light absorping film can be formed on the surface of high reflection film.
Similar with above-mentioned HHL encapsulation, the holographic laser apparatus that uses in the light source of the information-recording apparatus of for example optical pick-up etc. also has such structure, wherein except chip of laser, also comprise multiple arrangement (Optical devices for example are used for the photodiode of detection signal, or hologram apparatus etc.).Yet, still in such device, can adopt light absorping film to be formed on chip of laser on the diaphragm.And, can prevent the reduction of the output that causes by bad gas-tight seal, and can prevent by the increase of adhering to and assemble the drive current that causes of the pollutant on the chip of laser and the irregular operation of device.
The 4th embodiment: in first to the 3rd embodiment, the topology example of chip and encapsulation has been described mainly.Yet, among the 4th to the 13 embodiment below, the antiradar reflectivity film on the emission side end surface that is formed on chip of laser and the topology example of light absorping film are described.The structure of antiradar reflectivity film and light absorping film only is described hereinafter.Chip, high reflection film and encapsulation can have any structure.In addition, the combination of film only is an example, and other combination also can bring effect of the present invention.
In the 4th embodiment, the lip-deep antiradar reflectivity film that is formed on emission side is made by forming following film according to following order: the aluminium nitride on end surface (AlN) film/silicon nitride (SiN) film/aluminium oxide (Al 2O 3) film.At the uppermost Al that forms the antiradar reflectivity film 2O 3Form gold (Au) film on the film as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al 2O 3The thickness of film is 80nm, and the thickness of Au film is 4.5nm.
The AlN film close that is formed on the end surface of emission side is adhered to nitride-based semiconductor that constitutes chip and other film that constitutes the antiradar reflectivity film.Therefore, by forming the AlN film, can prevent antiradar reflectivity film stripped end surface and increase output.Therefore in addition, end surface and AlN film by the tight bond emission side can prevent to take place reactions such as for example oxidation on end surface, and suppress the change of properties of the end surface that caused by this reaction.Because suppressed non-radiative compound generation on the end surface by the change of properties that prevents end surface, so prevented because non-radiative compound increasing sharply produces serious optical damage (the catastrophic optical damage that heat is caused by the end surface that melts, COD) generation, and therefore make the stable operation of device become possibility.AlO xN 1-xAlso have identical characteristic with the AlN film, and by using the film of forming by this material can obtain identical effect.
In addition, because the SiN film has little thermal coefficient of expansion, so, also can keep the structure of diaphragm even form the light absorping film that produces heat.In addition, the SiN film has good moisture resistivity (resistanceto moisture), and it can prevent that also the character of end surface from being changed by water content in the end surface.Therefore, can obtain stable operation (particularly, under constant light output, preventing increase) along with the passage drive current of driving time.Silicon oxynitride (SiO xN 1-x(wherein, 0＜x＜1)) also have identical characteristic with SiN, and by using the film of forming by this material can obtain identical effect.And, preferably adopt such structure, wherein SiN or SiO on the end surface of light-emitting area side xN 1-xWith AlO xN 1-xPerhaps AlN uses together, specifically, and SiO xN 1-xPerhaps SiN is interposed in light absorping film and AlO xN 1-xBetween, perhaps between light absorping film and AlN, this is because this can obtain more stable device operation.
Here, can adopt such double-decker, wherein SiO xN 1-xPerhaps SiN is formed directly on the semi-conductive end surface, and light absorping film further is formed on SiO xN 1-xPerhaps on the SiN.And other film can be formed on semiconductor and SiO such as oxide-film (for example, aluminium oxide, silica or titanium oxide etc.) and nitride film (for example, aluminium nitride, silicon nitride or titanium nitride etc.) xN 1-xBetween, perhaps between semiconductor and the SiN.In addition, other film can be formed on SiO such as oxide-film or nitride film etc. xN 1-xAnd between the light absorping film, perhaps between SiN and the light absorping film.As mentioned above, SiO xN 1-xPerhaps SiN preferably is interposed between semi-conductive end surface and the outmost light absorping film, and this is to be the gathering of material because improved what become problem in non-level Hermetic Package this moment to the moisture resistivity of water content with as the Si of one of pollutant.
By on the low-emissivity film surface, forming the Au film, can prevent that pollutant from adhering to and assembling on low-reflection film and light absorping film as light absorping film.Therefore, can obtain to prevent effect with the irregular operation of the increase of the passage drive current of driving time and device.As mentioned above, by forming diaphragm and light absorping film, even drive in air atmosphere, laser device also has the long-life, and can stable operation.
Even when the thickness of Au film is changed into 1nm, 2nm and 7nm, also can obtain effect same as described above.
The 5th embodiment: in the 5th embodiment, the material that is formed on the antiradar reflectivity film on the end surface of emission side is identical with the 4th embodiment's.Specifically, on the end surface of emission side according to the film of following order below forming: the AlN film/SiN film/Al on end surface 2O 3Film.Platinum (Pt) film is formed on the uppermost Al that forms the antiradar reflectivity film 2O 3On the film as light absorping film.The thickness of AlN film is 6nm, and the thickness of SiN film is 100nm, Al 2O 3The thickness of film is 200nm, and the thickness of Pt film is 4nm.
The structure of the light absorping film of forming by above-mentioned antiradar reflectivity film with by Pt, the same with first to fourth embodiment, can be by close adhesion antiradar reflectivity film to end surface and by preventing that adhering to and assemble pollutant on antiradar reflectivity film and light absorping film obtains effect.In addition, in the present embodiment, even when AlN film and SiN film manufacture than thin among the 4th embodiment, also can obtain identical effect.
Even at the thickness of Pt film is light absorping film when changing to 1nm, 2nm and 8nm, also can obtain effect same as described above.
The 6th embodiment: in the 6th embodiment, identical among the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th and the 5th embodiment.Specifically, on the end surface of emission side according to the film of following order below forming: the AlN film/SiN film/Al on end surface 2O 3Film.In the present embodiment, titanium (Ti) film is formed on the uppermost Al that constitutes the antiradar reflectivity film 2O 3On the film, and the gold (Au) film further be formed on the Ti film, this multilayer film that has provided Ti film and Au film is as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al 2O 3The thickness of film is 80nm, and the thickness of Ti film is 1.5nm, and the thickness of Au film is 2.5nm.
By antiradar reflectivity film and the said structure that comprises the light absorping film of multilayer film, the same with first to the 5th embodiment, can obtain effect to end surface and by prevent that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
In the present embodiment, light absorping film is made of the multilayer film of Ti film and Au film.Yet the Au film can replace with the Pt film that has a same thickness with the Au film.In the case, also can obtain identical effect.
The 7th embodiment: in the 7th embodiment, the material that is formed on the antiradar reflectivity film on the end surface of emission side is identical with the 4th to the 6th embodiment's.Specifically, on the end surface of emission side according to the film of following order below forming: the AlN film/SiN film/Al on end surface 2O 3Film.In the present embodiment, molybdenum (Mo) film is formed on the uppermost Al that forms the antiradar reflectivity film 2O 3On the film as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al 2O 3The thickness of film is 80nm, and the thickness of Mo film is 4.0nm.
By antiradar reflectivity film and the said structure that comprises the light absorping film of Mo film, the same with first to the 6th embodiment, can obtain effect to end surface and by prevent that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
Even at the Mo film is the thickness of light absorping film when changing to 1nm, 2nm and 12nm, also can obtain effect same as described above.
The 8th embodiment: in the 8th embodiment, identical among the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the 7th embodiment.Specifically, on the end surface of emission side according to the film of following order below forming: the AlN film/SiN film/Al on end surface 2O 3Film.In the present embodiment, molybdenum (Mo) film is formed on the uppermost Al that constitutes the antiradar reflectivity film 2O 3On the film, and the gold (Au) film further be formed on the Mo film, this multilayer film that has provided Mo film and Au film is as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al 2O 3The thickness of film is 80nm, and the thickness of Mo film is 1.5nm, and the thickness of Au film is 2.5nm.
By antiradar reflectivity film and the said structure that comprises the light absorping film of multilayer film, the same with first to the 7th embodiment, can obtain effect to end surface and by prevent that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
In the present embodiment, light absorping film is made up of the multilayer film of Mo film and Au film.Yet the Au film can replace with the Pt film that has a same thickness with the Au film.In the case, also can obtain identical effect.
The 9th embodiment: in the 9th embodiment, identical among the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the 8th embodiment.Specifically, on the end surface of emission side according to the film of following order below forming: the AlN film/SiN film/Al on end surface 2O 3Film.In the present embodiment, aluminium (Al) film is formed on the uppermost Al that forms the antiradar reflectivity film 2O 3On the film as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al 2O 3The thickness of film is 80nm, and the thickness of Al film is 4.0nm.
The said structure of the light absorping film that constitutes by the antiradar reflectivity film with by Al, the same with first to the 8th embodiment, can obtain effect to end surface and by prevent that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
The tenth embodiment: in the tenth embodiment, identical among the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the 9th embodiment.Specifically, on the end surface of emission side according to the film of following order below forming: the AlN film/SiN film/Al on end surface 2O 3Film.In the present embodiment, with AlO xOxygen deprivation (oxygen-depleted) the aluminium film of (0＜x＜1.5) expression, promptly the oxygen deprivation film of aluminium oxide is as light absorping film, and this light absorping film is at the uppermost Al that constitutes the antiradar reflectivity film 2O 3On the film, AlO here xBe compound, its component is at Al: O=2: 3 stoichiometric compositions departs from the direction of the little component of oxygen quantitative change.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al 2O 3The thickness of film is 80nm, AlO xThe thickness of film is 60nm.
As mentioned above, Al 2O 3To laser is transparent basically.Yet, because oxygen deprivation film AlO for example xDeng absorbing light well, so such film can be used as light absorping film.
At AlO xIn the manufacturing process of film, for example, when using the ECR sputtering equipment, form Al by reducing 2O 3The flow velocity of the oxygen of film (for example 5.8ccm) can be easy to obtain AlO to for example 4.3ccm xFilm.Other condition for example argon gas flow velocity and the power supply that provides etc. can with first embodiment in describe those are identical, promptly the flow velocity of argon gas can be 20ccm, the RF power that is applied to the Al target can be 500W, the microwave power that produces plasma can be 500W.
By the antiradar reflectivity film with by AlO xThe said structure of the light absorping film that film constitutes, the same with first to the 9th embodiment, can obtain effect to end surface and by prevent that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
And, because by AlO xThe light quantity that film absorbs can be controlled by x value and thickness in the component, so it can be than only more strictly being adjusted by the light absorping film of control absorbing amount such as metal film.For example, wish to be suppressed under the situation of certain limit in light absorption, when using metal film, must the selective membrane method of formationing and the film formation condition approach and uniform film to form.Yet, when using AlO xDuring film,, and be easy to adjust the absorption of light even thick film also can change the x value near 1.5 value.
When adopting sputtering equipment because antiradar reflectivity film and light absorping film can be only by setting Al target and Si target and the flow velocity by appropriate change argon, oxygen and every kind of gas of nitrogen forms, so can form film with continuous technology.
Replace adopting AlO xAs light absorping film, can adopt with SiO xThe oxygen deprivation silicon oxide film (for example, thickness is 8nm) of (0＜x＜2) expression, wherein SiO xBe compound, its component is at Si: O=1: 2 stoichiometric compositions departs from the direction of the little component of oxygen quantitative change.As mentioned above, even adopting SiO xDuring film, also can obtain and adopt AlO xSituation in identical effect.
Replace adopting the oxygen deprivation film, can adopt with AlN x(0＜x＜1) expression poor nitrogen aluminium nitride film or with SiN x(the poor nitrogen silicon nitride film of the expression of 0＜x＜1.33...), wherein AlN xBe compound, its component is at Al: N=1: 1 stoichiometric compositions departs from the direction of the little component of nitrogen quantitative change, and SiN xBe compound, its component is at Si: N=3: 4 stoichiometric compositions departs from the direction of the little component of nitrogen quantitative change.
AlN only absorbs the light of being launched on a small quantity.Yet, by adopting poor nitrogen film, can with the same absorbing amount that increases of the tenth embodiment that adopts the oxygen deprivation film, and can be used as light absorping film.Under the situation that adopts sputtering equipment, be lower than the flow velocity that forms the AlN film by the flow velocity that makes nitrogen, can be easy to form poor nitrogen film.SiN is poor nitrogen and the little state of absorbing amount.Therefore, work as SiN xDuring as light absorping film, preferably make the x value less.
And, similar with the oxygen deprivation film, because by AlN xPerhaps SiN xThe light quantity that absorbs of poor nitrogen film can be by x value and the film thickness monitoring in the component, so can be than absorbing amount only the light absorping film of the THICKNESS CONTROL by metal film etc. more strictly adjusted.Even in forming two kinds of light absorping films, when adopting sputtering equipment, because antiradar reflectivity film and light absorping film the two can be only by setting Al target and Si target and forming, so can form film with continuous technology by the flow velocity that changes argon, oxygen and every kind of gas of nitrogen suitably.
The 11 embodiment: in the 11 embodiment, identical among the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the tenth embodiment.Specifically, on the end surface of emission side according to the film of following order below forming: the AlN film/SiN film/Al on end surface 2O 3Film.In the present embodiment, titanium nitride (TiN) film is formed on the Al of the uppermost film of forming the antiradar reflectivity film 2O 3On the film as light absorping film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al 2O 3The thickness of film is 80nm, and the thickness of TiN film is 20nm.
Sputtering technology also can be used to form the TiN film.In above-mentioned ECR sputtering equipment, the TiN film can be by introducing nitrogen and argon gas and adopting the sputter of Ti target can be easy to form.
The said structure of the light absorping film that constitutes about the antiradar reflectivity film with by the TiN film, the same with first to the tenth embodiment, can obtain effect to end surface and by prevent that pollutant from adhering to and assembling on antiradar reflectivity film and light absorping film by close adhesion antiradar reflectivity film.
Be not limited to TiN film, above-mentioned AlN xFilm and SiN xFilm, promptly in addition other metal (for example, zirconium (Zr), yttrium (Y), niobium (Nb), hafnium (Hf), tantalum (Ta), tungsten (W) etc.) nitride also can absorb the light of emission, and can be used as light absorping film.In addition, these films can be used as poor nitrogen film.
The 12 embodiment: in the 12 embodiment, identical among the material that is formed on the antiradar reflectivity film on the end surface of emission side and the 4th to the 11 embodiment.Specifically, on the end surface of emission side according to the film of following order below forming: the AlN film/SiN film/Al on end surface 2O 3Film.In the present embodiment, palladium oxide film is as the Al of the uppermost film of forming the antiradar reflectivity film 2O 3Light absorping film on the film.The thickness of AlN film is 20nm, and the thickness of SiN film is 300nm, Al 2O 3The thickness of film is 80nm, and the thickness of palladium oxide film is 3nm.
Method as forming palladium oxide film for example, can adopt such method, wherein after the Pd metal film forms, it is used in oxygen plasma oxidation in the plasma production device, to form palladium oxide film.Also can form palladium oxide film by adopting the palladium oxide target and evaporating with sputter.In addition, also can when introducing oxygen, form film, and also can after this film form, adopt oxygen plasma to carry out oxidation.
The thickness t of palladium oxide film is desirably in the scope of 0nm＜t≤100nm.If greater than 100nm, then light absorbing percentage increases, and the light extraction efficiency decay.More Qi Wang scope is 0nm＜t≤50nm, and the scope of more expectation is 0nm＜t≤10nm.Only the light absorping film that adheres to seldom just can bring effect.
In the above-described embodiments, palladium oxide is as light absorping film.Yet, also can adopt for example oxide of rhodium (Rh), iridium (Ir), osmium (Os) or ruthenium (Ru) etc. of metal.In addition, can make up the oxide of a plurality of these metals.
The 13 embodiment: in the 13 embodiment, begin to make antiradar reflectivity film: AlO according to the film of following order below forming by end surface from emission side xN 1-xFilm/SiN film.Palladium (Pd) film is as light absorping film, and on the surface that is formed on the SiN film, this SiN film is the uppermost film that constitutes the antiradar reflectivity film.AlO xN 1-xThe thickness of film is 20nm, and the thickness of SiN film is 160nm, and the thickness of Pd film is 5nm.This chip of laser as shown in figure 11.Figure 11 is the perspective schematic view according to the chip of laser of the 13 embodiment, and has showed the schematic enlarged drawing that forms a side of light absorping film.
As shown in figure 11, in chip of laser 11 according to present embodiment, be formed on antiradar reflectivity film 111 lip-deep light absorping films 112 partly aggegation (reveal, dotting).As the method for revealing, the method for driving laser apparatus is for example arranged.When the driving laser apparatus when vibrating, the part emitted laser is absorbed by the palladium that constitutes light absorping film 112, and the part light absorping film produces heat.Light absorping film is by the focusization that is produced, and as shown in figure 11, can obtain the chip of laser 110 that light absorping film is partly revealed.
Reveal and mainly occur in the zone that laser passes.In this zone, because light absorping film 112 is fully heated by laser, thus promoted to reveal, and light absorping film 112 turned to granule (lump) by point, therefore obtains light absorption film spot 112b.In addition, in the zone that forms light absorption film spot 112b, because form palladium aggegation when forming light absorption film spot 112b of light absorping film 112, so light absorping film 112 becomes discontinuous (thickness is 0 part appearance).In this discontinuous regional 112a, part Si N film is that the uppermost film of antiradar reflectivity film 111 is exposed.On the other hand, in the continuum 112c except discontinuity zone 112a, light absorping film 112 is continuous films, and antiradar reflectivity film 111 does not expose.
Revealing of light absorping film 112 can be carried out about two hours under with 30mW, 25 ℃ the continuous oscillation of light output.Adopt Figure 12 that result with the performance test of the about 1000 hours chip of laser of revealing 110 of 20mW, 25 ℃ of Continuous Drive is described.Figure 12 is the microphoto of taking down at transmission electron microscope (TEM), and has showed the cross section according to the chip of laser 110 of thriteenth embodiment of the invention.Specifically, Figure 12 has showed along the A-A face of chip of laser 110 shown in Figure 11 and has cutd open the cross section of getting.
As shown in figure 12, thickness is the AlO of 20nm xN 1-xFilm 111a is formed on the end surface of emission side of nitride-based semiconductor 113, and thickness is that the SiN film 111b of 160nm further is formed on the upper surface of film 111a.In addition, form by palladium and thickness is that the light absorping film 112 of 5nm is formed on the upper surface of SiN film 111b.Light absorping film 112 is included in discontinuity zone 112a and the continuum 112c that has light absorption film spot 112b in its zone.The size of light absorption film spot 112b depend on formation light absorping film 112 thickness and and fall into about 0.5nm extremely in the scope of about 50nm.
Even when the chip of laser 110 that the light absorping film 112 that drives is as shown in figure 12 partly revealed, prevent that also pollutant from adhering to and accumulate on the end surface of chip of laser 110.In other words, even light absorping film 112 is not a pantostrat and have discontinuously granule, can prevent that also pollutant from adhering to and accumulate on the end surface.
In addition, in the present embodiment, when forming light absorption film spot 112b, form around zone disappear (thickness be 0) of the part metals (palladium in the present embodiment) of light absorping film 112 from light absorption film spot 112b.Therefore, the slope efficiency during Laser Drive (slop efficiency) may improve, and drive current can reduce.
In addition, as in the present embodiment, when revealing with emitted laser, the part that light passes can be affirmed and easily be revealed.
In the present embodiment, as the method for revealing, adopt the method for carrying out aggegation with emitted laser.Yet, can adopt whole chip of laser 110 to be heated the method for revealing.In the case, different with the structure shown in Figure 11 and 12, discontinuity zone 112a extends overall optical absorbing film 112.Yet, even in this case, as at above-mentioned each embodiment, can obtain the effect that prevents that pollutant from adhering to and assembling.
Can be by applying energy for light absorping film 112 such as light or heat etc. are revealed from the outside.In the case, discontinuity zone 112a can be formed on any position.Reveal and when forming light absorping film 112, to carry out.In other words, can carry out the formation of film, carry out aggegation simultaneously.In addition,, can adopt any method,, especially finally be revealed discontinuous to become to the zone that the small part emitted laser is passed wherein to small part light absorping film 112 in order to reveal.
Even light absorping film 112 does not provide discontinuity zone 112a, also can obtain the effect of present embodiment.For example, can adopt such structure, wherein light absorping film 112 has pantostrat, and the granule of similar light absorption film spot 112b is produced on the surface of pantostrat.Even in such structure, then suppress light absorption because if pantostrat is fully thin, so the effect that drive current reduces as form the above-mentioned situation that does not connect regional 112a obtained.In addition, even when discontinuity layer is made fully thin, because formed the granule of forming by the material of light absorping film 112, so this can prevent adhering to of pollutant and assemble.
The kind of the thickness of light absorping film 112, the kind of material therefor and matrix (base) layer etc. can suitably be selected, with the size at control point etc.In the present embodiment, palladium is as the metal of revealing.Yet, can adopt gold (Au), platinum (Pt), rhodium (Rh), iridium (Ir), osmium (Os) or ruthenium (Ru) etc.
Revise: in the first to the 13 above-mentioned embodiment, although constitute the antiradar reflectivity film by several films, it can form with a kind of film.In addition; as diaphragm, can adopt such film, this film is formed by comprising the oxide that is selected from least a element among Al, Si, Hf, Ti, Nb, Ta, W and the Y; form by the nitride that comprises Al or Si etc., perhaps form by the nitrogen oxide that comprises Al or Si etc.
In the 4th to the 13 embodiment, the structure of antiradar reflectivity film side has only been described.Yet under the part light also situation by the high reflection film emission, light absorping film can be formed on the high reflection film.By adopting such structure, can prevent that pollutant from adhering to and accumulate in the highly reflecting films side.The film of enhancing bonding force is AlN film or AlO for example xN 1-xFilms etc. can be used as the part high reflection film and are formed directly on the end surface that forms high reflection film.In addition, high reflection film can be provided with SiN film or SiO xN 1-xFilm etc.
And, be formed with and comprise SiN or SiO forming light absorping film and diaphragm xN 1-xDeng the structure of film in because can reduce the increase of drive current, so diaphragm preferably is provided with the film of being made up of such material.Especially be SiO adopting thickness greater than 20nm xN 1-xUnder the situation of film, can obtain to suppress the effect that drive current increases.Therefore, SiO xN 1-xThe preferred thickness of film is greater than 20nm, more preferably greater than 80nm.
In addition, desirable is that the scope of the thickness t of light absorping film is 0nm＜t≤100nm.If it is greater than 100nm, then light absorbing percentage increases, and the light extraction efficiency decay.More Qi Wang scope is 0nm＜t≤50nm, and the scope of further expectation is 0nm＜t≤10nm.Only the light absorping film that adheres to seldom just can bring effect.
In addition, material as light absorping film, preferred Au, Pt, Rh, Ir, Pd, Os or the Ru etc. of adopting, this is because very low as the attachment coefficient (collectioncoefficient) of the Si based compound of one of pollutant, and such compound is difficult to assemble.The same with the 6th and the 8th above-mentioned embodiment, when light absorping film formed with two-layer or multilayer film, the film that such metal is formed was preferably used as the outermost tunic, and this is because obtained the effect that contaminant restraining adheres to and assembles.
Light absorping film can have two or more metal manufacturings, perhaps can be the multilayer film of the combination of several films, such as the combination of metal film and nitride film, and the combination of nitride film and oxygen deprivation film etc.
The present invention relates to the method for semiconductor light-emitting apparatus and manufacturing semiconductor light-emitting apparatus, more specifically, relate to the nitride semiconductor laser device of launching short-wavelength light, typically be to have and adhere to and assemble for example semiconductor light-emitting apparatus and the manufacture method thereof of the luminous component of the pollutant of silica etc.

Claims (12)

1. light-emitting device comprises:
Chip is used for luminous; With
Light absorping film is formed on the outmost surface of the end surface that passes through from the light emission of this chip, with the light of absorbent portion branch emission,
Wherein this light absorping film has the metal film that is made of metal,
This light-emitting device also comprises diaphragm, is formed on the end surface of this chip that passes through from the light emission of this chip, to protect this end surface, wherein
This light absorping film is formed on the surface of this diaphragm.
2. light-emitting device according to claim 1,
Wherein this metal film comprises and is selected from least a element in the group that gold, platinum, rhodium, iridium, osmium, ruthenium and palladium constitute.
3. light-emitting device comprises:
Chip is used for luminous; With
Light absorping film is formed on the outmost surface of the end surface that passes through from the light emission of this chip, with the light of absorbent portion branch emission,
Wherein this light absorping film is made of metal, and to this light absorping film of small part be non-uniform areas with regard to thickness, and
Light emission to small part from this chip emission is passed through to this non-uniform areas of small part,
This light-emitting device also comprises diaphragm, is formed on the end surface of this chip that passes through from the light emission of this chip, to protect this end surface, wherein
This light absorping film is formed on the surface of this diaphragm.
4. light-emitting device according to claim 3,
Wherein this non-uniform areas of this light absorping film is a discontinuity zone, and this light absorping film is discontinuous in this discontinuity zone.
5. light-emitting device according to claim 4,
Wherein this discontinuity zone of this light absorping film comprises the granule of being made up of the metal that constitutes this light absorping film.
6. light-emitting device according to claim 3,
Wherein this non-uniform areas of this light absorping film comprises:
Constitute the pantostrat of the metal of this light absorping film; With
The lip-deep granule of forming and be formed on this layer by this metal.
7. light-emitting device according to claim 3,
Wherein this metal comprises and is selected from least a metal in the group that gold, platinum, rhodium, iridium, osmium, ruthenium and palladium constitute.
8. according to claim 1 or 3 described light-emitting devices,
Wherein this diaphragm has by comprising the oxide-film that the oxide that is selected from least a element in the group that aluminium, titanium, yttrium, silicon, niobium, hafnium and tantalum constitute constitutes.
9. according to claim 1 or 3 described light-emitting devices,
Wherein this diaphragm has the film of at least a compound in the nitrogen oxide of the nitrogen oxide of nitride, aluminium of the nitride that comprises aluminium, silicon and silicon.
10. according to claim 1 or 3 described light-emitting devices,
Wherein this chip comprises the layer that is made of nitride-based semiconductor.
11. a light-emitting device comprises:
Chip is used for luminous; With
Metal film by the metal manufacturing, and is formed on the outmost surface of end surface of this chip, from the light emission of this chip by this end surface,
This light-emitting device also comprises diaphragm, is formed on the end surface of this chip that passes through from the light emission of this chip, to protect this end surface, wherein
This metal film is formed on the surface of this diaphragm,
Wherein, the light that this metal film is launched with the described chip of absorption portion as light absorping film,
And wherein, this metal film to small part be the zone that the metal that constitutes this metal film becomes granule.
12. a light-emitting device comprises:
Chip is used for luminous; With
Metal film by the metal manufacturing, and is formed on the outmost surface of end surface of this chip, from the light emission of this chip by this end surface,
This light-emitting device also comprises diaphragm, is formed on the end surface of this chip that passes through from the light emission of this chip, to protect this end surface, wherein
This metal film is formed on the surface of this diaphragm,
Wherein, the light that this metal film is launched with the described chip of absorption portion as light absorping film,
Wherein, this metal film is a pantostrat.
CN2008101254599A 2007-06-13 2008-06-13 Light emitting device and method of fabricating a light emitting device Active CN101325310B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007156453 2007-06-13
JP156453/07 2007-06-13
JP075804/08 2008-03-24
JP2008075804A JP5122337B2 (en) 2007-06-13 2008-03-24 Light emitting device and method for manufacturing light emitting device

Related Child Applications (3)

Application Number Title Priority Date Filing Date
CN2010102943257A Division CN101950920B (en) 2007-06-13 2008-06-13 Light emitting element, and manufacturing method thereof
CN201010173999.1A Division CN101847824B (en) 2007-06-13 2008-06-13 Light emitting device and method of fabricating same
CN2010102943346A Division CN101950921B (en) 2007-06-13 2008-06-13 Light emitting element, and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN101325310A CN101325310A (en) 2008-12-17
CN101325310B true CN101325310B (en) 2011-11-09

Family

ID=40188711

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201010173999.1A Active CN101847824B (en) 2007-06-13 2008-06-13 Light emitting device and method of fabricating same
CN2010102943346A Active CN101950921B (en) 2007-06-13 2008-06-13 Light emitting element, and manufacturing method thereof
CN2010102943257A Active CN101950920B (en) 2007-06-13 2008-06-13 Light emitting element, and manufacturing method thereof
CN2008101254599A Active CN101325310B (en) 2007-06-13 2008-06-13 Light emitting device and method of fabricating a light emitting device

Family Applications Before (3)

Application Number Title Priority Date Filing Date
CN201010173999.1A Active CN101847824B (en) 2007-06-13 2008-06-13 Light emitting device and method of fabricating same
CN2010102943346A Active CN101950921B (en) 2007-06-13 2008-06-13 Light emitting element, and manufacturing method thereof
CN2010102943257A Active CN101950920B (en) 2007-06-13 2008-06-13 Light emitting element, and manufacturing method thereof

Country Status (2)

Country Link
JP (2) JP5122337B2 (en)
CN (4) CN101847824B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5443356B2 (en) * 2008-07-10 2014-03-19 株式会社東芝 Semiconductor laser device
DE102009028909A1 (en) * 2009-08-26 2011-03-17 Nanoplus Gmbh Nanosystems And Technologies Semiconductor laser with an absorber mounted on a laser mirror
JP2011151310A (en) * 2010-01-25 2011-08-04 Renesas Electronics Corp Nitride-based semiconductor light emitting element and light emitting element which loads nitride-based semiconductor light emitting element on package
US8565280B2 (en) 2010-09-14 2013-10-22 Sanyo Electric Co., Ltd. Semiconductor laser element, semiconductor laser device, and optical apparatus employing the same
CN102005695A (en) * 2010-10-25 2011-04-06 江苏飞格光电有限公司 SLD (super radiation laser) TO-CAN coaxial miniaturized encapsulating method
JP2012178434A (en) * 2011-02-25 2012-09-13 Nichia Chem Ind Ltd Semiconductor laser device
JP2013041005A (en) 2011-08-11 2013-02-28 Sharp Corp Optical component, and optical module
WO2018012342A1 (en) * 2016-07-12 2018-01-18 シャープ株式会社 Antifouling film
JP2020129653A (en) * 2019-02-08 2020-08-27 シャープ株式会社 Light emitting device and manufacturing method thereof
US20240014634A1 (en) * 2020-11-27 2024-01-11 Enkris Semiconductor, Inc. Gan-based laser and manufacturing method therefor
WO2024004677A1 (en) * 2022-06-28 2024-01-04 パナソニックホールディングス株式会社 Semiconductor laser element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5969983A (en) * 1982-10-14 1984-04-20 Matsushita Electric Ind Co Ltd Semiconductor laser
JPH08161766A (en) * 1994-11-30 1996-06-21 Sharp Corp Optical pickup device
JP3375042B2 (en) * 1997-08-27 2003-02-10 日亜化学工業株式会社 Nitride semiconductor laser device
JP2000228467A (en) * 1998-12-02 2000-08-15 Toshiba Corp Semiconductor, its manufacture and composition for sealing thereof
JP2000349389A (en) * 1999-06-02 2000-12-15 Fuji Photo Film Co Ltd Lignt emitting device
JP2001015850A (en) * 1999-06-28 2001-01-19 Matsushita Electric Ind Co Ltd Deposition method for titanium oxide film, and manufacture of semiconductor laser
JP2002094173A (en) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp Semiconductor laser device
JP4926324B2 (en) * 2001-02-08 2012-05-09 三星モバイルディスプレイ株式會社 Organic EL device
JP2002270967A (en) * 2001-03-13 2002-09-20 Nichia Chem Ind Ltd Semiconductor laser element
JP2002280663A (en) * 2001-03-15 2002-09-27 Sony Corp Semiconductor laser element and optical integrated device
WO2005030980A2 (en) * 2003-09-22 2005-04-07 Snake Creek Lasers Llc High densiity methods for producing diode-pumped micro lasers
JP2005175111A (en) * 2003-12-10 2005-06-30 Hitachi Ltd Semiconductor laser and its manufacturing method
JP2005340625A (en) * 2004-05-28 2005-12-08 Nichia Chem Ind Ltd Nitride semiconductor laser device
JP2006019470A (en) * 2004-07-01 2006-01-19 Sony Corp Surface emitting semiconductor laser and optical module
CN1805230B (en) * 2004-12-20 2011-06-01 夏普株式会社 Nitride semiconductor light-emitting device and method for fabrication thereof
JP2006278458A (en) * 2005-03-28 2006-10-12 Sharp Corp Light-emitting device and manufacturing method thereof, and illuminator
JP3970293B2 (en) * 2005-07-22 2007-09-05 三洋電機株式会社 Semiconductor laser device
JP2007081075A (en) * 2005-09-14 2007-03-29 Sharp Corp Nitride semiconductor laser device and its manufacturing method
JP2007103814A (en) * 2005-10-07 2007-04-19 Sharp Corp Nitride semiconductor light emitting device and its manufacturing method
JP2007109737A (en) * 2005-10-11 2007-04-26 Toshiba Corp Nitride semiconductor laser equipment and its manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode

Also Published As

Publication number Publication date
JP5514273B2 (en) 2014-06-04
CN101847824B (en) 2015-06-10
CN101950920A (en) 2011-01-19
CN101847824A (en) 2010-09-29
CN101950920B (en) 2013-12-11
CN101950921A (en) 2011-01-19
JP2012231189A (en) 2012-11-22
CN101950921B (en) 2013-11-13
JP5122337B2 (en) 2013-01-16
CN101325310A (en) 2008-12-17
JP2009021548A (en) 2009-01-29

Similar Documents

Publication Publication Date Title
CN101325310B (en) Light emitting device and method of fabricating a light emitting device
US9768360B2 (en) Optoelectronic component and method of producing an optoelectronic component
US8274209B2 (en) Light emitting device having semiconductor laser and fluorescent material and method for manufacturing the same
US7653099B2 (en) Semiconductor laser device which is capable of stably emitting short-wavelength laser light
US6735230B1 (en) Semiconductor luminous elements and semiconductor laser
TWI637539B (en) Light emitting semiconductor component and fabricating method thereof
JP5352214B2 (en) LIGHT EMITTING ELEMENT, CHIP AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT
US7940003B2 (en) Light emitting device and method of fabricating a light emitting device
JP2009004766A (en) Compound semiconductor wafer, light emitting diode and manufacturing method thereof
JP2003086839A (en) Nitride semiconductor light emitting device and method for manufacturing the same
JP5228441B2 (en) Integrated light source and method for manufacturing the same
CN101242077B (en) Method for manufacturing laser device
US8803165B2 (en) Nitride semiconductor light emitting device and method for manufacturing nitride semiconductor light emitting device
JP5411491B2 (en) Light emitting element
US6991952B2 (en) Method of manufacturing semiconductor device
JP4310352B2 (en) Light emitting device and method for manufacturing light emitting device
JP2004273908A (en) Method for assembling light emitting device
JP4740037B2 (en) Nitride semiconductor laser device and nitride semiconductor laser device including the same
JP5228442B2 (en) Integrated light source and method for manufacturing the same
JP2014022379A (en) Semiconductor laser element, nitride semiconductor laser element ane nitride semiconductor laer device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20220402

Address after: Asahi 1, Damen Machi, Fukuyama, Hiroshima, Japan

Patentee after: Sharp Fukuyama laser Co.,Ltd.

Address before: Osaka, Japan

Patentee before: Sharp Corp.