CN101366091B - 多状态非易失性存储器的编程方法 - Google Patents
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- CN101366091B CN101366091B CN2006800399759A CN200680039975A CN101366091B CN 101366091 B CN101366091 B CN 101366091B CN 2006800399759 A CN2006800399759 A CN 2006800399759A CN 200680039975 A CN200680039975 A CN 200680039975A CN 101366091 B CN101366091 B CN 101366091B
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- G—PHYSICS
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
Abstract
Description
Claims (24)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/260,658 US7301817B2 (en) | 2005-10-27 | 2005-10-27 | Method for programming of multi-state non-volatile memory using smart verify |
US11/260,658 | 2005-10-27 | ||
US11/259,799 US7366022B2 (en) | 2005-10-27 | 2005-10-27 | Apparatus for programming of multi-state non-volatile memory using smart verify |
US11/259,799 | 2005-10-27 | ||
PCT/US2006/042179 WO2007050976A1 (en) | 2005-10-27 | 2006-10-26 | Method for programming of multi-state non-volatile memory using smart verify |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101366091A CN101366091A (zh) | 2009-02-11 |
CN101366091B true CN101366091B (zh) | 2012-05-30 |
Family
ID=37996080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800399759A Active CN101366091B (zh) | 2005-10-27 | 2006-10-26 | 多状态非易失性存储器的编程方法 |
Country Status (2)
Country | Link |
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US (2) | US7301817B2 (zh) |
CN (1) | CN101366091B (zh) |
Families Citing this family (143)
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