CN101393963B - Single crystalline NaCl barrier magnetic tunnel junction and use therefor - Google Patents
Single crystalline NaCl barrier magnetic tunnel junction and use therefor Download PDFInfo
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Abstract
The invention relates to a monocrystal NaCl potential barrier magnetic tunnel junction, which includes a core film layer; and a tunnel junction potential barrier layer in a core film layer is composed of a NaCl (001) monocrystal insulating material. The tunnel junction can be a single potential barrier or a double potential barrier. The monocrystal NaCl potential barrier magnetic tunnel junction provided by the invention can be applied to a novel spinning electric device design, such as magnetic sensors, electric sensors, and gas sensors with high sensitivity, a magnetic random access memory (MRAM) memory cell, a magnetic logic, or a self-rotating transistor and other device units. The invention adopts the monocrystal NaCl (001) as the intermediate potential barrier layer, so that the tunnel junction tunneling magnetoresistance ratio can be efficiently improved, at the same time smaller junction resistance can be obtained, and the power consumption of device application can be reduced. At the same time, the process for preparing the monocrystal NaCl potential barrier material is simple, the cost is lower, and the material is rich in resource and friendly to environment.
Description
Technical field
The present invention relates to a kind of single crystalline NaCl (001) barrier magnetic tunnel junction, with and application in spin electric device.
Background technology
Find tunneling magnetic resistance (Tunnel Magnetoresistance from Julli é re in 1975, TMR) since the effect, in the MTJ tunnelling transport property of spin correlation electron and tunneling magnetic resistance (TMR) effect oneself become one of important research field in the Condensed Matter Physics.Nineteen ninety-five Japan scientist T.Miyazaki and U.S. scientist J.S.Moodera are utilizing amorphous Al-O insulating material to be the MTJ of barrier layer (Magnetic tunnel junction, MTJ) independently obtained under the room temperature 18% and 10% tunnel magneto resistance (TMR) ratio in respectively, thereby started the research climax of MTJ, and greatly promoted to comprise computer hard disc magnetic recording head (Magnetic Recording Head) material, magnetic sensor (MagneticSensor), (Magnetic Random-Access Memory, MRAM) device etc. is in the development of interior a series of spin electric devices for magnetic RAM.At present, people are obtaining new remarkable achievement aspect the research of MTJ barrier material, be higher than 400% TMR value as experimentally in the MTJ that monocrystalline MgO (001) potential barrier is made, having obtained room temperature, much larger than generally using at present the tunnel junction that amorphous Al-the O barrier layer is made (current room temperature TMR value reaches 80%).This is because to the tunnel junction of monocrystalline MgO (001) as barrier layer, tunnelling current mainly by the charged son of s (
1 symmetry) contribution, this tunnelling mechanism proposes [W.H.Butler, et al. by people such as Butler the earliest, Phys.Rev.B 63,054416 (2001)], and confirmed [S.S.P Parkin by experimental study in recent years, et al., Nat.Mater.3,862 (2004); S.Yuasa, et al., Nat.Mater.3,868 (2004)].
Yet monocrystalline MgO (001) potential barrier tunnel junction still has weak point: MgO (001) barrier layer thickness must be to guarantee higher TMR effect about 1nm to 3nm on magnetic RAM device application such as (MRAM), and this moment, tunnel junction resistance was bigger, caused device power consumption higher.If the MgO barrier layer thickness is thinner, and the tunnel junction tunneling magnetic resistance of mass preparation can not guarantee good consistency at this moment.Explore new monocrystalline insulative barriers layer MTJ material with high magneto-resistor ratio, and also can reduce tunnel junction resistance and power consumption simultaneously, and technology is simple, and with low cost, environmental friendliness is the new challenge and the only way of development novel magnetic tunnel junction material.
Summary of the invention
The object of the present invention is to provide a kind of single crystalline NaCl (001) material to do the MTJ of potential barrier, particularly unipotential is built and the MTJ of double potential barrier, this MTJ has overcome the defective that existing monocrystalline MgO (001) potential barrier tunnel junction also is faced with big junction resistance and power consumption in actual applications substantially, manufacturing process is simple, cost is cheaper, still is aboundresources and eco-friendly material simultaneously.
The objective of the invention is to realize by the following technical solutions:
Single crystalline NaCl provided by the invention (001) barrier magnetic tunnel junction, the barrier layer in the core rete that it comprises are that NaCl (001) monocrystalline insulating material is formed.
This tunnel junction can be that unipotential is built, and also can be double potential barrier.
In technical scheme of the present invention, provide a kind of single crystalline NaCl (001) unipotential to build MTJ, it comprises a substrate, and on bottom buffering conductive layer, bottom antiferromagnetism pinning layer, core rete, top protective layer and conductive layer, its core rete comprises from bottom to up: first magnetosphere (hereinafter to be referred as M1), barrier layer (hereinafter to be referred as I1) and second magnetosphere (hereinafter to be referred as M2), and promptly the structure of core rete is M1/I1/M2; The direction of magnetization of the first magnetosphere M1 is by the antiferromagnetism pinning layer pinning of bottom, and this antiferromagnetism pinning layer can be made or antiferromagnetic materials such as other CoO, NiO, PtCr constitute by the alloy material of Ir, Fe, Rh, Pt or Pd and Mn; And the direction of magnetization of the second magnetosphere M2 is freely, promptly the direction of magnetization of this layer can change with externally-applied magnetic field, identical or opposite with the direction of magnetization of magnetosphere M1, form unipotential tunnel junction barrier parallel (P attitude) and 2 kinds of magneto-resistor states of antiparallel (AP attitude).
The composition material of described magnetosphere M1 and M2 comprises ferrimagnet FM, semimetal magnetic material HM or magnetic semiconductor material MSC, and the thickness of the described first magnetosphere M1 and the second magnetosphere M2 is 1～50nm; Two magnetospheric thickness can be identical or inequality with material;
Described ferromagnetic metal material FM comprises: 3d transition group magnetic elemental metals such as Fe, Co, Ni, rare earth elemental metals such as Sm, Gd, Nd, ferromagnetic alloies such as Co-Fe, Co-Fe-B, Co-Fe-Si-B, Ni-Fe, Gd-Y;
Described semimetal magnetic material HM comprises: Fe
3O
4, CrO
2, La
xSr
1-xMnO
3And Co
2Heussler alloys such as MnSi;
Described magnetic semiconductor material MSC comprises: ZnO, TiO that Fe, Co, Ni, V, Mn mix
2, HfO
2And SnO
2, also comprise: GaAs, InAs, GaN and ZnTe that Mn mixes;
The composition material of described tunnel barrier layer I1 is NaCl (a 001) monocrystalline insulating material, and thickness is 0.5～5.0nm.
In technical scheme of the present invention, a kind of single crystalline NaCl (001) dual-potential magnetic tunnel is provided, it comprises a substrate, and on bottom buffering conductive layer, bottom antiferromagnetism pinning layer, the core rete, top antiferromagnetism pinning layer, top protective layer and conductive layer, its core rete comprises from bottom to up: first magnetosphere (hereinafter to be referred as M1), first barrier layer (hereinafter to be referred as I1), second magnetosphere (hereinafter to be referred as M2), second barrier layer (hereinafter to be referred as I2) and the 3rd magnetosphere (hereinafter to be referred as M3), promptly the structure of core rete is M1/I1/M2/I2/M3; The direction of magnetization of the first magnetosphere M1 and the 3rd magnetosphere M3 becomes same direction by the bottom with top antiferromagnetic layer pinning, and this antiferromagnetism pinning layer can be made or antiferromagnetic materials such as other CoO, NiO, PtCr constitute by the alloy material of Ir, Fe, Rh, Pt or Pd and Mn; And the direction of magnetization of the second magnetosphere M2 is freely, promptly the direction of magnetization of this layer can change with externally-applied magnetic field, identical or opposite with the direction of magnetization of magnetosphere M1 and M3, form bibarrier tunnel junction parallel (P attitude) and 2 kinds of magneto-resistor states of antiparallel (AP attitude).
The composition material of described magnetosphere MI, M2, M3 comprises ferrimagnet FM, semimetal magnetic material HM or magnetic semiconductor material MSC, and the thickness of the described first and the 3rd magnetosphere M1 and M3 is 1～50nm; The thickness of the described second magnetosphere M2 is 0.5～25nm; Three magnetospheric thickness can be identical or inequality with material;
Described ferromagnetic metal material FM comprises: 3d transition group magnetic elemental metals such as Fe, Co, Ni, rare earth elemental metals such as Sm, Gd, Nd, ferromagnetic alloies such as Co-Fe, Co-Fe-B, Co-Fe-Si-B, Ni-Fe, Gd-Y;
Described semimetal magnetic material HM comprises: Fe
3O
4, CrO
2, La
xSr
1-xMnO
3And Co
2Heussler alloys such as MnSi;
Described magnetic semiconductor material MSC comprises: ZnO, TiO that Fe, Co, Ni, V, Mn mix
2, HfO
2And SnO
2, also comprise: GaAs, InAs, GaN and ZnTe that Mn mixes;
The composition material of described tunnel barrier layer I1, I2 is NaCl (a 001) monocrystalline insulating material, and thickness is 0.5～5.0nm; For the core rete of double potential barrier, the thickness of I1 and I2 can be identical, also can be different.
Single crystalline NaCl provided by the invention (001) MTJ is on the substrate of any one selected prior art, utilizes conventional method for manufacturing thin film and corresponding micro fabrication to be prepared from.Described method for manufacturing thin film can be methods such as magnetron sputtering, molecular beam epitaxy (MBE), electron beam evaporation, pulsed laser deposition (PLD), metal organic chemical vapor deposition (MOCVD), sol-gel method (Sol-Gel), electro-deposition or pulsed laser deposition, liquid-phase chemical reaction deposition and the crystallization of high purity N aCl salt solution artificial regulatory.Described micro fabrication can be photoetching process, metal mask method, ion beam etching, focused-ion-beam lithography and chemical reaction etching etc.Wherein the NaCl of core rete (001) barrier layer can obtain with the method for physics or chemical deposition, as magnetron sputtering, molecular beam epitaxy (MBE), electron beam evaporation, pulsed laser deposition (PLD), metal organic chemical vapor deposition (MOCVD), sol-gel method (Sol-Gel), electro-deposition or pulsed laser deposition etc.
Single crystalline NaCl provided by the invention (001) unipotential is built and dual-potential magnetic tunnel can use micro-processing method or insulator micron, sub-micron or nano particle mask method to be prepared into required tunnel junction graphic structure, and this graphic structure can be square, rectangle, ellipse, hexagon or its corresponding hollow annular magnetic moment closo magnetic tunnel junction structure.
Single crystalline NaCl provided by the invention (001) unipotential is built MTJ, tunnelling current mainly by the how sub-electronics of s band (spin up certainly,
1 symmetry) contribution, so in the core rete barrier layer (I1) both sides magnetic poles (M1 and M2) when the direction of magnetization is parallel (P attitude) tunnelling current bigger, this moment tunnel junction resistance less; And when changing external magnetic field and make in the core rete magnetic pole layer (M1 and M2) direction of magnetization antiparallel (AP attitude), the both sides carbon electrode can be with and not match, and tunnelling current is less, and unipotential tunnel junction barrier resistance opposing parallel state (P attitude) is bigger at this moment.Therefore can obtain the very high unipotential of room temperature and build tunneling magnetic resistance ratio (greater than 200%).The junction resistance of NaCl (001) barrier layer generation simultaneously is less, has reduced the power consumption on the device application.
Single crystalline NaCl provided by the invention (001) dual-potential magnetic tunnel, tunnelling current mainly by the how sub-electronics of s band (spin up certainly,
1 symmetry) contribution, so (P attitude) tunnelling current is bigger when intermediate magnetic layer M2 is parallel with the M3 direction of magnetization with two ends magnetic pole M1 in the core rete, tunnel junction resistance is less at this moment; And when changing external magnetic field and make that intermediate magnetic layer M2 is with two ends magnetic pole M1 and M3 antiparallel (AP attitude) in the core rete, the both sides carbon electrode can be with and not match, and tunnelling current is less, and bibarrier tunnel junction resistance opposing parallel state (P attitude) is bigger at this moment.Therefore can obtain the very high double potential barrier tunneling magnetic resistance ratio (greater than 200%) of room temperature.The junction resistance of NaCl (001) barrier layer generation simultaneously is less, has reduced the power consumption on the device application.
Single crystalline NaCl provided by the invention (001) unipotential is built and dual-potential magnetic tunnel can be applied to novel spin electric device design, for example can be used for highly sensitive magnetosensitive, electric quick, photosensitive and gas sensor, magnetic RAM (MRAM) memory cell, magnetic logical device, spin transistor unit etc.
Single crystalline NaCl provided by the invention (001) unipotential is built and the advantage of dual-potential magnetic tunnel is: adopt the middle barrier layer of single crystalline NaCl (001) as MTJ, when effectively improving tunnel junction tunneling magnetic resistance ratio, can access less junction resistance, and reduce the power consumption on the device application.The preparation technology of single crystalline NaCl (001) barrier material is simple simultaneously, and cost is cheaper, still is aboundresources and eco-friendly material simultaneously.
Embodiment
Embodiment 1, magnetron sputtering method prepare single crystalline NaCl (001) unipotential and build MTJ
Utilize the high vacuum magnetron sputtering apparatus at the Si/SiO that cleans through conventional method
2On the substrate successively deposit thickness be the bottom buffering conductive layer Ta of 10nm; The antiferromagnetism pinning layer Ir-Mn of 10nm; And the unipotential of 3-tier architecture is built core rete (M1/I1/M2)---Fe (10nm)/NaCl (001) (1nm)/Fe (10nm); Above the core rete, continue the Au top protective layer of sputtering sedimentation 10nm.Single crystalline NaCl in the core rete (001) insulating barrier forms by the direct sputter of single crystalline NaCl target.The growth conditions of above-mentioned magnetoresistance effect: back of the body end vacuum: 1 * 10
-6Pa; Sputter high purity argon air pressure: 0.07Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.03～0.11nm/sec; Growth time: film thickness/growth rate; When the M1 magnetosphere of the antiferromagnetic pinning layer of deposition, core rete, apply the plane induced magnetic field of 100 Oe, therefore the Fe of magnetosphere M1 is fixed into some direction of magnetizations by antiferromagnetism pinning layer Ir-Mn, and the direction of magnetization of the Fe of the second magnetosphere M2 is relatively freely.The magnetoresistance effect that deposition is good adopts micro-processing technology of the prior art, promptly at first pass through gluing, preceding baking, again on electron beam exposure apparatus, according to required figure film sample is exposed, then development, photographic fixing, back baking, with ion etching process magnetoresistance effect is carved into required figure then, soaks with glue-dispenser at last and remove photoresist.On the multi-layer film structure that erosion is shaped at the moment, utilize conventional film growth means then, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, gas-phase chemical reaction deposition etc. deposit the thick SiO of one deck 100nm
2Insulating barrier is buried each multilayer film and isolation mutually, adopts micro-processing technology of the prior art to carry out etching, promptly at first navigates to the position that deposits multilayer film on focused ion beam equipment, then utilizes the focused-ion-beam lithography method to SiO
2Insulating barrier carries out etching, makes the magnetoresistance effect of burying under the insulating barrier expose.Utilize the high vacuum magnetron sputtering apparatus to deposit the conductive layer Cu of a layer thickness at last for 100nm, growth conditions as previously mentioned, process electrode with conventional semiconductor microactuator processing technology, promptly at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure machine, utilization has the reticle of pattern to be processed and exposes, then development, photographic fixing, back baking, with ion etching process the conductive layer on the multilayer film is carved into the shape of four electrodes then, soak with glue-dispenser at last and remove photoresist, promptly obtain single crystalline NaCl of the present invention (001) unipotential and build MTJ.
When externally-applied magnetic field makes M2 in the core rete parallel with the M1 direction of magnetization, tunnelling current mainly by the how sub-electronics of s band (spin up certainly,
1 symmetry) contribution, therefore this moment, (P attitude) tunnelling current was bigger, and tunnel junction resistance is less; And by changing externally-applied magnetic field, when making magnetic pole layer in the core rete (M1 and M2) direction of magnetization antiparallel (AP attitude), the both sides carbon electrode can be with and not match, and tunnelling current is less, and tunnel junction resistance opposing parallel state this moment (P attitude) is bigger.Therefore can obtain the very high tunneling magnetic resistance ratio (greater than 200%) of room temperature.
Embodiment 2, magnetron sputtering method prepare single crystalline NaCl (001) dual-potential magnetic tunnel
Utilize the high vacuum magnetron sputtering apparatus at the Si/SiO that cleans through conventional method
2On the substrate successively deposit thickness be the bottom buffering conductive layer Ta of 10nm; The antiferromagnetism pinning layer Ir-Mn of 10nm; And the double potential barrier core rete (M1/11/M2/12/M3) of 5 layers of structure---Fe (10nm)/NaCl (001) (1.5nib)/Fe (2nm)/NaCl (1nm)/Fe (10nm); Above the core rete, continue the antiferromagnetism Ir-Mn pinning layer of deposition 12nm and the Au top protective layer of 10nm.Single crystalline NaCl in the core rete (001) insulating barrier forms by the direct sputter of single crystalline NaCl target.The growth conditions of above-mentioned magnetoresistance effect: back of the body end vacuum: 1 * 10
-6Pa; Sputter high purity argon air pressure: 0.07Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.03～0.11nm/sec; Growth time: film thickness/growth rate; When M1 that deposits antiferromagnetic pinning layer, core rete and M3 magnetosphere, apply the plane induced magnetic field of 100 Oe, therefore the Fe of magnetosphere M1 and M3 is fixed into the same direction of magnetization by antiferromagnetism pinning layer Ir-Mn, and the direction of magnetization of the Fe of magnetosphere M2 is relatively freely.The magnetoresistance effect that deposition is good adopts micro-processing technology of the prior art, promptly at first pass through gluing, preceding baking, again on electron beam exposure apparatus, according to required figure film sample is exposed, then development, photographic fixing, back baking, with ion etching process magnetoresistance effect is carved into required figure then, soaks with glue-dispenser at last and remove photoresist.On the multi-layer film structure that erosion is shaped at the moment, utilize conventional film growth means then, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, gas-phase chemical reaction deposition etc. deposit the thick SiO of one deck 100nm
2Insulating barrier is buried each multilayer film and isolation mutually, adopts micro-processing technology of the prior art to carry out etching, promptly at first navigates to the position that deposits multilayer film on focused ion beam equipment, then utilizes the focused-ion-beam lithography method to SiO
2Insulating barrier carries out etching, makes the magnetoresistance effect of burying under the insulating barrier expose.Utilize the high vacuum magnetron sputtering apparatus to deposit the conductive layer Cu of a layer thickness at last for 100nm, growth conditions as previously mentioned, process electrode with conventional semiconductor microactuator processing technology, promptly at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure machine, utilization has the reticle of pattern to be processed and exposes, then development, photographic fixing, back baking, with ion etching process the conductive layer on the multilayer film is carved into the shape of four electrodes then, soak with glue-dispenser at last and remove photoresist, promptly obtain single crystalline NaCl of the present invention (001) dual-potential magnetic tunnel.
When externally-applied magnetic field makes core rete intermediate magnetic layer M2 parallel with the M3 direction of magnetization with two ends magnetic pole M1, tunnelling current mainly by the how sub-electronics of s band (spin up certainly,
1 symmetry) contribution, therefore this moment, (P attitude) tunnelling current was bigger, and tunnel junction resistance is less; And by changing externally-applied magnetic field, make when intermediate magnetic layer M2 is with two ends magnetic pole M1 and M3 direction of magnetization antiparallel (AP attitude) in the core rete, the both sides carbon electrode can be with and not match, and tunnelling current is less, and tunnel junction resistance opposing parallel state (P attitude) is bigger at this moment.Therefore can obtain the very high tunneling magnetic resistance ratio (greater than 200%) of room temperature.
Embodiment 3, molecular beam epitaxial method prepare single crystalline NaCl (001) unipotential and build MTJ
Utilize supra polymer beam epitaxy equipment on monocrystalline MgO (001) material substrate of cleaning through conventional method successively deposit thickness be the bottom buffering conductive layer Ru of 10nm; The antiferromagnetism pinning layer Pt-Mn of 10nm; And the core rete (M1/11/M2) of 3-tier architecture-Co (15nm)/NaCl (001) f2nm)/Co (15nm); Above the core rete, continue the Pt protective layer of epitaxial deposition 5nm.When each magnetosphere of the antiferromagnetic pinning layer of epitaxial deposition, core rete, apply the plane induced magnetic field of 100 Oe, so the Co of magnetosphere M1 fixes by antiferromagnetism pinning layer Pt-Mn, the direction of magnetization of the Co of magnetosphere M2 is relatively freely.The magnetoresistance effect that deposition is good adopts micro-processing technology of the prior art, promptly at first pass through gluing, preceding baking, again on electron beam exposure apparatus, according to required figure film sample is exposed, then development, photographic fixing, back baking, with ion etching process magnetoresistance effect is carved into required figure then, soaks with glue-dispenser at last and remove photoresist.On the multi-layer film structure that erosion is shaped at the moment, utilize conventional film growth means then, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, gas-phase chemical reaction deposition etc. deposit the thick SiO of one deck 120nm
2Insulating barrier is buried each multilayer film and isolation mutually, adopts micro-processing technology of the prior art to carry out etching, promptly at first navigates to the position that deposits multilayer film on focused ion beam equipment, then utilizes the focused-ion-beam lithography method to SiO
2Insulating barrier carries out etching, makes the magnetoresistance effect of burying under the insulating barrier expose.Utilize the high vacuum magnetron sputtering apparatus to deposit the conductive layer Al of a layer thickness at last for 120nm, growth conditions as previously mentioned, process electrode with conventional semiconductor microactuator processing technology, promptly at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure machine, utilization has the reticle of pattern to be processed and exposes, then development, photographic fixing, back baking, with ion etching process the conductive layer on the multilayer film is carved into the shape of four electrodes then, soak with glue-dispenser at last and remove photoresist, promptly obtain single crystalline NaCl of the present invention (001) unipotential and build MTJ.
It is similar to embodiment 1 that the single crystalline NaCl of present embodiment (001) unipotential is built its magneto-resistance effect of MTJ, and by changing the suffered external magnetic field of tunnel junction, junction resistance (AP) opposing parallel state (P attitude) when antiparallel state is bigger.Therefore can obtain the very high tunneling magnetic resistance ratio (greater than 200%) of room temperature.
Embodiment 4, molecular beam epitaxial method prepare single crystalline NaCl (001) dual-potential magnetic tunnel
Utilize supra polymer beam epitaxy equipment on monocrystalline MgO (001) material substrate of cleaning through conventional method successively deposit thickness be the bottom buffering conductive layer Ru of 10nm; The antiferromagnetism pinning layer Pt-Mn of 10nm; And the double potential barrier core rete (M1/I1/M2/I2/M3) of 5 layers of structure---Co (15nm)/NaCl (001) (2nm)/Co (5nm)/NaCl (1nm)/Co (15nm); Above the core rete, continue the antiferromagnetism pinning layer Pt-Mn of deposition 12nm and the Pt protective layer of top 5nm.When each magnetosphere of the antiferromagnetic pinning layer of epitaxial deposition, core rete, apply the plane induced magnetic field of 100Oe, therefore the Co among magnetosphere M1 and the M3 is fixed into the same direction of magnetization by antiferromagnetism pinning layer Pt-Mn, and the direction of magnetization of the Co of magnetosphere M2 is relatively freely.The magnetoresistance effect that deposition is good adopts micro-processing technology of the prior art, promptly at first pass through gluing, preceding baking, again on electron beam exposure apparatus, according to required figure film sample is exposed, then development, photographic fixing, back baking, with ion etching process magnetoresistance effect is carved into required figure then, soaks with glue-dispenser at last and remove photoresist.On the multi-layer film structure that erosion is shaped at the moment, utilize conventional film growth means then, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, gas-phase chemical reaction deposition etc. deposit the thick SiO of one deck 120nm
2Insulating barrier is buried each multilayer film and isolation mutually, adopts micro-processing technology of the prior art to carry out etching, promptly at first navigates to the position that deposits multilayer film on focused ion beam equipment, then utilizes the focused-ion-beam lithography method to SiO
2Insulating barrier carries out etching, makes the magnetoresistance effect of burying under the insulating barrier expose.Utilize the high vacuum magnetron sputtering apparatus to deposit the conductive layer Al of a layer thickness at last for 120nm, growth conditions as previously mentioned, process electrode with conventional semiconductor microactuator processing technology, promptly at first pass through gluing, preceding baking, again on ultraviolet, deep ultraviolet exposure machine, utilization has the reticle of pattern to be processed and exposes, then development, photographic fixing, back baking, with ion etching process the conductive layer on the multilayer film is carved into the shape of four electrodes then, soak with glue-dispenser at last and remove photoresist, promptly obtain single crystalline NaCl of the present invention (001) dual-potential magnetic tunnel.
Its magneto-resistance effect of the single crystalline NaCl of present embodiment (001) dual-potential magnetic tunnel is similar to embodiment 2, and by changing the suffered external magnetic field of tunnel junction, junction resistance (AP) opposing parallel state (P attitude) when antiparallel state is bigger.Therefore can obtain the very high tunneling magnetic resistance ratio (greater than 200%) of room temperature.
Embodiment 5, utilize mocvd method to prepare single crystalline NaCl (001) unipotential to build MTJ
At first utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc., deposit thickness is the bottom buffering conductive layer Ta of 15nm successively on the GaAs material substrate of cleaning through conventional method; The antiferromagnetism pinning layer PtCr of 10nm; And the unipotential of 3-tier architecture is built 2 magnetosphere-Co-Fe-B (20nm) and Co-Fe-B (20nm) in the core rete (M1/I1/M2); Above the core rete, continue the Cr protective layer of deposition 5nm.And single crystalline NaCl (001) the insulating barrier I1 in the core rete (M1/I1/M2) is made by metal organic chemical vapor deposition (MOCVD) method.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 0.07Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.03～0.11nm/sec; Growth time: film thickness/growth rate; When each magnetosphere of deposition antiferromagnetic pinning layer, core rete, apply the plane induced magnetic field of 100Oe, so the Co-Fe-B of magnetosphere M1 fixes by antiferromagnetism pinning layer PtCr, the direction of magnetization of the Co-Fe-B of magnetosphere M2 is relatively freely.The magnetoresistance effect that deposition is good adopts micro-processing technology of the prior art, promptly at first pass through gluing, preceding baking, again on electron beam exposure apparatus, according to required figure film sample is exposed, then development, photographic fixing, back baking, with ion etching process magnetoresistance effect is carved into required figure then, soaks with glue-dispenser at last and remove photoresist.On the multi-layer film structure that erosion is shaped at the moment, utilize conventional film growth means then, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, gas-phase chemical reaction deposition etc. deposit the thick SiO of one deck 130nm
2Insulating barrier is buried each multilayer film and isolation mutually, adopts micro-processing technology of the prior art to carry out etching, promptly at first navigates to the position that deposits multilayer film on focused ion beam equipment, then utilizes the focused-ion-beam lithography method to SiO
2Insulating barrier carries out etching, makes the magnetoresistance effect of burying under the insulating barrier expose.Utilize the metal mask method to deposit the conductive layer Au (top electrodes) of a layer thickness at last, promptly obtain single crystalline NaCl of the present invention (001) unipotential and build barrier magnetic tunnel junction for 200nm by the high vacuum magnetron sputtering apparatus.
It is similar to embodiment 1 that the single crystalline NaCl of present embodiment (001) unipotential is built its magneto-resistance effect of MTJ, and by changing the suffered external magnetic field of tunnel junction, junction resistance (AP) opposing parallel state (P attitude) when antiparallel state is bigger.Therefore can obtain the very high tunneling magnetic resistance ratio (greater than 200%) of room temperature.
Embodiment 6, utilize mocvd method to prepare single crystalline NaCl (001) dual-potential magnetic tunnel
At first utilize conventional film growth means, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, electrochemical deposition, molecular beam epitaxy etc., deposit thickness is the bottom buffering conductive layer Ta of 15nm successively on the GaAs material substrate of cleaning through conventional method; The antiferromagnetism pinning layer PtCr of 10nm; And 3 magnetospheres in the double potential barrier core rete (M1/I1/M2/I2/M3) of 5 layers of structure---Co-Fe-B (20nm), Co-Fe-B (5nm) and Co-Fe-B (20nm); Above the core rete, continue the antiferromagnetism pinning layer PtCr of deposition 10nm and the Cr protective layer of top 5nm.And the core rete (M1/I/M2) of 3-tier architecture and single crystalline NaCl (001) the insulating barrier I1 in 5 layers of structural core rete (M1/I1/M2/I2/M3) and I2 are made by metal organic chemical vapor deposition (MOCVD) method.The growth conditions of above-mentioned magnetoresistance effect: be equipped with end vacuum: 5 * 10
-7Pa; Sputter high purity argon air pressure: 0.07Pa; Sputtering power: 120W; The specimen holder speed of rotation: 20rmp; Growth temperature: room temperature; Growth rate: 0.03～0.11nm/sec; Growth time: film thickness/growth rate; When each magnetosphere of the antiferromagnetic pinning layer of deposition, core rete, apply the plane induced magnetic field of 100Oe, therefore the Co-Fe-B among magnetosphere M1 and the M3 is fixed into the same direction of magnetization by antiferromagnetism pinning layer PtCr, and the direction of magnetization of the Co-Fe-B of magnetosphere M2 is relatively freely.The magnetoresistance effect that deposition is good adopts micro-processing technology of the prior art, promptly at first pass through gluing, preceding baking, again on electron beam exposure apparatus, according to required figure film sample is exposed, then development, photographic fixing, back baking, with ion etching process magnetoresistance effect is carved into required figure then, soaks with glue-dispenser at last and remove photoresist.On the multi-layer film structure that erosion is shaped at the moment, utilize conventional film growth means then, for example magnetron sputtering, electron beam evaporation, pulsed laser deposition, gas-phase chemical reaction deposition etc. deposit the thick SiO of one deck 130nm
2Insulating barrier is buried each multilayer film and isolation mutually, adopts micro-processing technology of the prior art to carry out etching, promptly at first navigates to the position that deposits multilayer film on focused ion beam equipment, then utilizes the focused-ion-beam lithography method to SiO
2Insulating barrier carries out etching, makes the magnetoresistance effect of burying under the insulating barrier expose.Utilize the metal mask method to deposit the conductive layer Au (top electrodes) of a layer thickness at last, promptly obtain single crystalline NaCl of the present invention (001) dual-potential magnetic tunnel for 200nm by the high vacuum magnetron sputtering apparatus.
Its magneto-resistance effect of the single crystalline NaCl of present embodiment (001) dual-potential magnetic tunnel is similar to embodiment 2, and by changing the suffered external magnetic field of tunnel junction, junction resistance (AP) opposing parallel state (P attitude) when antiparallel state is bigger.Therefore can obtain the very high tunneling magnetic resistance ratio (greater than 200%) of room temperature.
Embodiment 7～12,
Prepare single crystalline NaCl (001) unipotential according to embodiment 1 identical method and build MTJ, the NaCl in the core rete (001) barrier layer I1 forms by the direct sputter of single crystalline NaCl target.The layers of material and the thickness of its multilayer film are listed in the table 1.
Table 1, single crystalline NaCl of the present invention (001) unipotential are built the structure (unit: the nm-nanometer) of MTJ multilayer film
| Embodiment | 7 | 8 | 9 | 10 | 11 | 12 | |
| Substrate | Composition | Si/SiO 2 | Si/SiO 2 | MgO | MgO | GaAs | GaAs |
| The buffering conductive layer | Composition | Cr | Ta | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 10nm | 50nm | 100nm | 150nm | 300nm | |
| Embodiment | 7 | 8 | 9 | 10 | 11 | 12 | |
| Antiferromagnetic pinning layer | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm | |
| First magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| Tunnel barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| Second magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| The top protective layer | Composition | Au | Cu | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 5nm | 5nm | 5nm | 5nm | 5nm | |
| Conductive layer | Composition | Al | Au | Cu | Al | Au | Cu |
| Thickness | 100nm | 100nm | 120nm | 120nm | 200nm | 200nm | |
Embodiment 13～18,
Prepare single crystalline NaCl (001) dual-potential magnetic tunnel according to embodiment 2 identical methods, the NaCl in the core rete (001) barrier layer I1 and I2 form by the direct sputter of single crystalline NaCl target.The layers of material and the thickness of its multilayer film are listed in the table 2.
Structure (the unit: the nm-nanometer) of table 2, single crystalline NaCl of the present invention (001) dual-potential magnetic tunnel multilayer film
| Embodiment | 13 | 14 | 15 | 16 | 17 | 18 | |
| Substrate | Composition | Si/SiO 2 | Si/SiO 2 | MgO | MgO | GaAs | GaAs |
| The buffering conductive layer | Composition | Cr | Ta | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 10nm | 50nm | 100nm | 150nm | 300nm | |
| Embodiment | 13 | 14 | 15 | 16 | 17 | 18 | |
| The antiferromagnetic pinning layer in bottom | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm | |
| First magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| First barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| Second magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 1nm | 2nm | 3nm | 4nm | 5nm | 10nm | |
| Second barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| The 3rd magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 15nm | 25nm | 15nm | 25nm | 15nm | 25nm | |
| The antiferromagnetic pinning layer in top | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm | |
| The top protective layer | Composition | Au | Cu | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 5nm | 5nm | 5nm | 5nm | 5nm | |
| Conductive layer | Composition | Al | Au | Cu | Al | Au | Cu |
| Thickness | 100nm | 100nm | 120nm | 120nm | 200nm | 200nm | |
Embodiment 19～24,
Prepare single crystalline NaCl (001) unipotential according to embodiment 3 identical methods and build MTJ, the NaCl in the core rete (001) barrier layer I1 forms by molecular beam epitaxial method.The layers of material and the thickness of its multilayer film are listed in the table 3.
Structure (the unit: the nm-nanometer) of table 3, the single MTJ multilayer film of single crystalline NaCl of the present invention (001) potential barrier
| Embodiment | 19 | 20 | 21 | 22 | 23 | 24 | |
| Substrate | Composition | Si/SiO 2 | Si/SiO 2 | MgO | MgO | GaAs | GaAs |
| The buffering conductive layer | Composition | Cr | Ta | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 10nm | 50nm | 100nm | 150nm | 300nm | |
| Antiferromagnetic pinning layer | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm | |
| First magnetosphere | Composition | Fe | Co | CoFeB | Ni | CoFe | CoFeSiB |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| Tunnel barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| Second magnetosphere | Composition | Fe | Fe | Co | Co | CoFe | CoFe |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| The top protective layer | Composition | Au | Cu | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 5nm | 5nm | 5nm | 5nm | 5nm | |
| Conductive layer | Composition | Al | Au | Cu | Al | Au | Cu |
| Thickness | 100nm | 100nm | 120nm | 120nm | 200nm | 200nm | |
Embodiment 25～30,
Prepare single crystalline NaCl (001) dual-potential magnetic tunnel according to embodiment 4 identical methods, the NaCl in the core rete (001) barrier layer I1 and I2 form by molecular beam epitaxial method.The layers of material and the thickness of its multilayer film are listed in the table 4.
Structure (the unit: the nm-nanometer) of table 4, single crystalline NaCl barrier list MTJ multilayer film of the present invention
| Embodiment | 25 | 26 | 27 | 28 | 29 | 30 | |
| Substrate | Composition | Si/SiO 2 | Si/SiO 2 | MgO | MgO | GaAs | GaAs |
| The buffering conductive layer | Composition | Cr | Ta | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 10nm | 50nm | 100nm | 150nm | 300nm | |
| The antiferromagnetic pinning layer in bottom | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm | |
| First magnetosphere | Composition | Fe | Co | CoFeB | Ni | CoFe | CoFeSiB |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| First barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| Second magnetosphere | Composition | Fe | Fe | Co | Co | CoFe | CoFe |
| Thickness | 1nm | 2nm | 3nm | 4nm | 5nm | 10nm | |
| Second barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| The 3rd magnetosphere | Composition | Fe | Fe | Co | Co | CoFe | CoFe |
| Thickness | 15nm | 25nm | 15nm | 25nm | 15nm | 25nm | |
| The antiferromagnetic pinning layer in top | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm | |
| The top protective layer | Composition | Au | Cu | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 5nm | 5nm | 5nm | 5nm | 5nm | |
| Conductive layer | Composition | Al | Au | Cu | Al | Au | Cu |
| Thickness | 100nm | 100nm | 120nm | 120nm | 200nm | 200nm |
Embodiment 31～36,
Prepare single crystalline NaCl (001) unipotential according to embodiment 5 identical methods and build MTJ, the single crystalline NaCl in the core rete (001) barrier layer I1 is made by metal organic chemical vapor deposition (MOCVD) method.The layers of material and the thickness of its multilayer film are listed in the table 5.
Table 5, single crystalline NaCl of the present invention (001) unipotential are built the structure (unit: the nm-nanometer) of MTJ multilayer film
| Embodiment | 31 | 32 | 33 | 34 | 35 | 36 | |
| Substrate | Composition | Si/SiO 2 | Si/SiO 2 | MgO | MgO | GaAs | GaAs |
| The buffering conductive layer | Composition | Cr | Ta | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 10nm | 50nm | 100nm | 150nm | 300nm | |
| Antiferromagnetic pinning layer | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm | |
| First magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| Tunnel barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| Second magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| The top protective layer | Composition | Au | Cu | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 5nm | 5nm | 5nm | 5nm | 5nm | |
| Conductive layer | Composition | Al | Au | Cu | Al | Au | Cu |
| Thickness | 100nm | 100nm | 120nm | 120nm | 200nm | 200nm |
Embodiment 37～42,
Prepare single crystalline NaCl (001) dual-potential magnetic tunnel according to embodiment 6 identical methods, the single crystalline NaCl in the core rete (001) insulating barrier I1 and I2 are made by metal organic chemical vapor deposition (MOCVD) method.The layers of material and the thickness of its multilayer film are listed in the table 6.
Structure (the unit: the nm-nanometer) of table 3, single crystalline NaCl of the present invention (001) dual-potential magnetic tunnel multilayer film
| Embodiment | 37 | 38 | 39 | 40 | 41 | 42 | |
| Substrate | Composition | Si/SiO 2 | Si/SiO 2 | MgO | MgO | GaAs | GaAs |
| The buffering conductive layer | Composition | Cr | Ta | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 10nm | 50nm | 100nm | 150nm | 300nm | |
| Antiferromagnetic pinning layer | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm | |
| First magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 5nm | 15nm | 5nm | 15nm | 5nm | 15nm | |
| First barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| Second magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 1nm | 2nm | 3nm | 4nm | 5nm | 10nm | |
| Second barrier layer | Composition | NaCl | NaCl | NaCl | NaCl | NaCl | NaCl |
| Thickness | 0.5nm | 1nm | 2nm | 3nm | 4nm | 5nm | |
| The 3rd magnetosphere | Composition | Fe | Co | CoFeB | NiFe | CoFe | La xSr 1-xMnO 3 |
| Thickness | 15nm | 25nm | 15nm | 25nm | 15nm | 25nm | |
| Antiferromagnetic pinning layer | Composition | IrMn | PtMn | PtPdMn | PtCr | FeMn | PtMn |
| Thickness | 10nm | 10nm | 15nm | 15nm | 12nm | 12nm |
| Thickness | 1nm | 2nm | 3nm | 4nm | 5nm | 10nm | |
| The top protective layer | Composition | Au | Cu | Ta | Cr | Ru | Pt |
| Thickness | 5nm | 5nm | 5nm | 5nm | 5nm | 5nm | |
| Conductive layer | Composition | Al | Au | Cu | Al | Au | Cu |
| Thickness | 100nm | 100nm | 120nm | 120nm | 200nm | 200nm |
Claims (9)
1. single crystalline NaCl barrier magnetic tunnel junction is characterized in that: the tunnel junction barrier layer in the core rete that it comprises is that NaCl (001) monocrystalline insulating material is formed.
2. single crystalline NaCl barrier magnetic tunnel junction as claimed in claim 1 is characterized in that: tunnel junction is that unipotential is built,
The tunnel junction that this unipotential is built comprises a substrate, and on bottom buffering conductive layer, bottom antiferromagnetism pinning layer, core rete, top protective layer and conductive layer, its core rete comprises from bottom to up: first magnetosphere, barrier layer and second magnetosphere; The first magnetospheric direction of magnetization is by the antiferromagnetism pinning layer pinning of bottom, the second magnetospheric direction of magnetization is freely, change with externally-applied magnetic field, identical or opposite with the first magnetospheric direction of magnetization, form 2 kinds of magneto-resistor states that comprise parallel P attitude and antiparallel AP attitude of unipotential tunnel junction barrier, this parallel P attitude is that first magnetosphere is parallel with the second magnetospheric direction of magnetization in the described core rete, and this antiparallel AP attitude is first magnetosphere and the second magnetospheric direction of magnetization antiparallel in the described core rete.3, single crystalline NaCl barrier magnetic tunnel junction as claimed in claim 2 is characterized in that: described barrier layer is made up of NaCl (001) monocrystalline insulating material, and the thickness of this layer is 0.5～5.0nm.
4. single crystalline NaCl barrier magnetic tunnel junction as claimed in claim 2, it is characterized in that: described first magnetosphere and second magnetosphere are made up of ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and the described first magnetospheric thickness and the second magnetospheric thickness are 1～50nm.
5. single crystalline NaCl barrier magnetic tunnel junction as claimed in claim 4 is characterized in that:
Described ferrimagnet comprises: 3d transition group magnetic elemental metals, rare earth elemental metals, or ferromagnetic alloy Co-Fe, Co-Fe-B, Co-Fe-Si-B, Ni-Fe, Gd-Y;
Described semimetal magnetic material comprises: Fe
3O
4, CrO
2, La
xSr
1-xMnO
3Or Co
2MnSi;
Described magnetic semiconductor material comprises: ZnO, TiO that Fe, Co, Ni, V, Mn mix
2, HfO
2Or SnO
2, or GaAs, InAs, GaN and the ZnTe of Mn doping.
6. single crystalline NaCl barrier magnetic tunnel junction as claimed in claim 1, it is characterized in that: tunnel junction is a double potential barrier, the MTJ of this double potential barrier comprises a substrate, and on bottom buffering conductive layer, bottom antiferromagnetism pinning layer, core rete, top antiferromagnetism pinning layer, top protective layer and conductive layer, its core rete comprises from bottom to up: first magnetosphere, first barrier layer, second magnetosphere, second barrier layer and the 3rd magnetosphere; First magnetosphere becomes same direction by the bottom with top antiferromagnetism pinning layer pinning with the 3rd magnetospheric direction of magnetization; And the second magnetospheric direction of magnetization is freely, change with externally-applied magnetic field, identical or opposite with first magnetosphere with the 3rd magnetospheric direction of magnetization, form 2 kinds of magneto-resistor states that comprise parallel P attitude and antiparallel AP attitude of bibarrier tunnel junction, this parallel P attitude is that second magnetosphere is parallel with the 3rd magnetospheric direction of magnetization with first in the described core rete, and this antiparallel AP attitude is second magnetosphere and the first and the 3rd a magnetospheric direction of magnetization antiparallel in the described core rete.
7. single crystalline NaCl barrier magnetic tunnel junction as claimed in claim 6 is characterized in that: described first barrier layer and second barrier layer are made up of NaCl (001) monocrystalline insulating material, and two-layer thickness is respectively 0.5～5.0nm.
8. single crystalline NaCl barrier magnetic tunnel junction as claimed in claim 6, it is characterized in that: described first, second is made up of ferrimagnet, semimetal magnetic material or magnetic semiconductor material with the 3rd magnetosphere, and the described first and the 3rd magnetospheric thickness is 1～50nm; The thickness of the described second magnetosphere M2 is 0.5～25nm.
9. single crystalline NaCl barrier magnetic tunnel junction as claimed in claim 8 is characterized in that:
Described ferrimagnet comprises: 3d transition group magnetic elemental metals, rare earth elemental metals, or ferromagnetic alloy Co-Fe, Co-Fe-B, Co-Fe-Si-B, Ni-Fe, Gd-Y;
Described semimetal magnetic material comprises: Fe
3O
4, CrO
2, La
xSr
1-xMnO
3Or Co
2MnSi;
Described magnetic semiconductor material comprises: ZnO, TiO that Fe, Co, Ni, V, Mn mix
2, HfO
2Or SnO
2, or GaAs, InAs, GaN and the ZnTe of Mn doping.
10. the application of arbitrary described single crystalline NaCl barrier magnetic tunnel junction in spin electric device in the claim 1 to 9, it can be used for magnetosensitive, electricity quick, photosensitive and gas sensor, magnetic RAM memory cell, magnetic logical device unit or spin transistor.
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Citations (4)
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|---|---|---|---|---|
| US5792569A (en) * | 1996-03-19 | 1998-08-11 | International Business Machines Corporation | Magnetic devices and sensors based on perovskite manganese oxide materials |
| CN2556792Y (en) * | 2002-05-16 | 2003-06-18 | 中国科学院物理研究所 | Tunnel effect magneto-resistance device |
| CN1564247A (en) * | 2004-04-15 | 2005-01-12 | 中国科学院物理研究所 | Resonance tunnel-through type magnetic tunnel tunnel junction component |
| CN1988199A (en) * | 2005-12-20 | 2007-06-27 | 中国科学院物理研究所 | Magnetic tunnel structure suitable for device and its use |
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2007
- 2007-09-21 CN CN2007101221980A patent/CN101393963B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5792569A (en) * | 1996-03-19 | 1998-08-11 | International Business Machines Corporation | Magnetic devices and sensors based on perovskite manganese oxide materials |
| CN2556792Y (en) * | 2002-05-16 | 2003-06-18 | 中国科学院物理研究所 | Tunnel effect magneto-resistance device |
| CN1564247A (en) * | 2004-04-15 | 2005-01-12 | 中国科学院物理研究所 | Resonance tunnel-through type magnetic tunnel tunnel junction component |
| CN1988199A (en) * | 2005-12-20 | 2007-06-27 | 中国科学院物理研究所 | Magnetic tunnel structure suitable for device and its use |
Non-Patent Citations (2)
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| 由臣等.利用金属掩膜法制备钉扎型磁性隧道结.物理学报53 8.2004,53(8),全文. * |
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