CN101414715B - Miniature connector and preparation method thereof - Google Patents
Miniature connector and preparation method thereof Download PDFInfo
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- CN101414715B CN101414715B CN2007101625857A CN200710162585A CN101414715B CN 101414715 B CN101414715 B CN 101414715B CN 2007101625857 A CN2007101625857 A CN 2007101625857A CN 200710162585 A CN200710162585 A CN 200710162585A CN 101414715 B CN101414715 B CN 101414715B
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Abstract
The invention discloses a miniature connector and a production method, the miniature connector comprises a patterned silicon material layer, a patterned insulation layer, at least a first stress layer, at least a second stress layer and a cover body, wherein the patterned insulation layer is matched and arranged on the patterned silicon material layer; the patterned silicon material layer is provided with a fist opening; the patterned insulation layer is provided with a second opening corresponding to the first opening and at least a cantilever terminal; and the cantilever terminal is protruded above the first opening. The first stress layer covers the end part of the cantilever terminal far away from the inner wall of the second opening, and so the end part is bent towards a direction. The second stress layer covers the cantilever terminal outside the end part, and so the cantilever terminal is bent towards the other direction. The cover body is matched and arranged on the patterned insulation layer, and covers the cantilever terminal.
Description
Technical field
The present invention relates to a kind of microcomputer electric component (micro-electromechanical device) and preparation method thereof, and be particularly related to a kind of micro connector (micro-connector) and preparation method thereof.
Background technology
Generally speaking, can set connector usually in the electronic installation, and come to electrically connect, so that electronic installation has preferable effective utilization with insert by connector.Yet along with the progress of science and technology, electronic installation promptly is difficult for being installed in the lightening electronic installation with the connector plastic cement body of traditional moulds made and the conducting terminal of application stamping technology made towards lightening trend development.Known technology promptly proposes a kind of micro connector that is suitable for being installed in the lightening electronic installation.Wherein, be provided with a plurality of conducting terminals in the micro connector, and insert can be inserted in the micro connector, and come to electrically connect with electronic installation by these conducting terminals.
What deserves to be mentioned is, insert is being inserted in the process of micro connector, the high insertion force of insert (insertion force) makes the thin metal layer of electrical contact surfaces be worn easily, cause the situation that loose contact is arranged between insert and conducting terminal easily to take place, influence the integrality when electric signal is transmitted between insert and conducting terminal, and then cause electronic installation can't be in normal operating state.On the other hand, insert is being inserted in the process of micro connector, the high insertion force of insert also causes the conducting terminal in the micro connector improper stressed and produce the situation (kinking effect) of bending damage easily.
In addition, general micro connector is to utilize (the silicon on insulator of silicon on the insulating barrier, SOI) substrate is made, and the SOI substrate mainly is made up of two silicon material layers (silicon-layer) and the insulating barrier (insulator) that is equipped between two silicon material layers.Yet because the cost of SOI substrate is comparatively expensive, so the cost of manufacture of micro connector can significantly increase.On the other hand, make in the process of micro connector utilizing the SOI substrate, because the insulating barrier that is positioned between two silicon material layers approaches (about 3 μ m), therefore removing partial insulative layer between two silicon material layers when making cantilever terminal, in order to the etching solution that removes insulating barrier be limited easily (trap) in two silicon material layers between finedraw in and be difficult for being removed, its surface tension of etching solution that is limited between two silicon material layers can produce adsorption phenomena (stiction), influence the out-of-plane shape of cantilever terminal, cause the making rate of finished products of micro connector not good.
Summary of the invention
The invention provides a kind of micro connector, it is suitable for making insert (inserting element) by thermal actuation (thermal actuation), and (zero insertion force, mode ZIF) is planted thereon with zero insertion force.
The invention provides a kind of micro connector, it has lower cost of manufacture.
The invention provides a kind of manufacture method of micro connector, it can make cantilever terminal (cantilever-terminal) that preferable out-of-plane shape is arranged.
The invention provides a kind of manufacture method of micro connector, it has preferable making rate of finished products.
The present invention proposes a kind of micro connector, and it is suitable for the insert of planting.Micro connector comprises the patterned silicon material layer, is equipped on patterned insulation layer, at least one first stressor layers (stress-layer), at least one second stressor layers and lid (cap) on the patterned silicon material layer.Wherein, the patterned silicon material layer has first opening, and patterned insulation layer has second opening corresponding with first opening and at least one cantilever terminal, and cantilever terminal is the top that protrudes from first opening from the inwall of second opening, one side.
In addition, first stressor layers is to be covered on the first end of cantilever terminal away from the second opening inwall, and second stressor layers then is to be covered on the first end cantilever terminal and first stressor layers in addition.Wherein, the part cantilever terminal that is coated with first stressor layers bends towards first direction, and the part cantilever terminal that is coated with second stressor layers bends towards second direction from the inwall of second opening.In addition, lid then is to be equipped on the patterned insulation layer, and covers cantilever terminal, wherein have the space between lid and the cantilever terminal, and insert is suitable for being plugged on the space, and joins with cantilever terminal.
This first stressor layers is a compressive stress layer, this second stressor layers is the tensile stress layer, and the thermal coefficient of expansion of this second stressor layers is greater than the thermal coefficient of expansion of this cantilever terminal, this second stressor layers is a conduction, this first direction is the direction towards this first opening, and this second direction is the direction away from this first opening.
The present invention reintroduces a kind of manufacture method of micro connector, and it comprises the following steps.At first, provide silicon material layer.Then, on silicon material layer, form insulating barrier.Then, patterned insulation layer, to form patterned insulation layer, wherein patterned insulation layer has second opening and at least one cantilever terminal, and second opening exposes the part silicon material layer.Then, form first stressor layers in cantilever terminal on away from the first end of the second opening inwall.And then, on the cantilever terminal and first stressor layers, form second stressor layers.Then, remove and join with cantilever terminal and part silicon material layer that second opening is exposed, forming first opening in silicon material layer, and make cantilever terminal unsettled.Afterwards, provide lid, and lid is assembled to patterned insulation layer.
Wherein this first stressor layers is a compressive stress layer, this second stressor layers is the tensile stress layer, and the part suspended wall terminal that is coated with this second stressor layers bends towards the direction away from this first opening towards the inwall of this second opening, is coated with the direction bending of the part suspended wall terminal of this first stressor layers towards this first opening
The present invention forms insulating barrier on silicon material layer, and on insulating barrier, make a plurality of cantilever terminal, and on each cantilever terminal, make first stressor layers and second stressor layers, with by for example being first stressor layers of compression (compressive stress) layer and for example being the out-of-plane shape that second stressor layers of tensile stress (tensile stress) layer is controlled cantilever terminal.That is the present invention can effectively utilize the out-of-plane shape that residual stress (residual stress) is controlled cantilever terminal, and then promotes the making rate of finished products of micro connector.
What deserves to be mentioned is, the present invention uses body etching (bulk etching) or other suitable modes to remove and join with cantilever terminal and part silicon material layer that second opening is exposed, making has suitable space between cantilever terminal and the silicon material layer, and the applied etching solution of above-mentioned technology can be removed in subsequent technique easily.Thus, cantilever terminal promptly can not be subjected to residuing in its effect of surface tension of etching solution between insulating barrier and silicon material layer, and cantilever terminal promptly has good out-of-plane shape, and then makes micro connector that preferable making rate of finished products be arranged.In addition, because the present invention makes micro connector with more easy micro electronmechanical technology, therefore micro connector of the present invention has batch a large amount of production advantages of change and a good making rate of finished products.
In addition, because the present invention makes a plurality of cantilever terminal on insulating barrier, and making has second stressor layers that signal transmits effect on each cantilever terminal, therefore carrying out signal when transmitting when micro connector, signal can transmit by second stressor layers effectively, and is difficult for having the situation of signal strength weakening.In addition, comparatively cheap in order to the cost of the silicon material layer of making micro connector in the present invention, therefore utilize the SOI substrate to make micro connector compared to known technology, micro connector of the present invention has cheaper product cost.
On the other hand, when insert is inserted in the process of micro connector, micro connector of the present invention can make insert plant thereon in the mode of zero insertion force by thermal actuation, and then the cantilever terminal of improving known technology is because of the improper stressed situation that produces bending damage.
For above-mentioned feature and advantage of the present invention can be become apparent, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.
Description of drawings
Figure 1A illustrates the micro connector of one embodiment of the invention and the schematic diagram of insert.
Figure 1B illustrates the micro connector of Figure 1A and the exploded view of insert.
Fig. 1 C illustrates the insert of Figure 1A and micro connector in the schematic diagram of another angle.
The insert that Fig. 2 A to Fig. 2 D illustrates Figure 1A is inserted in the schematic flow sheet of micro connector.
Fig. 3 illustrates the making flow chart of the micro connector of one embodiment of the invention.
Fig. 4 A to Fig. 4 L illustrates the process schematic representation of the micro connector of one embodiment of the invention.
Fig. 5 A to Fig. 5 L illustrates among Fig. 4 A to Fig. 4 L the profile along I-I ' line.
Fig. 6 A to Fig. 6 L illustrates among Fig. 4 A to Fig. 4 L the profile along II-II ' line.
Fig. 7 A illustrates the schematic diagram that an insert docks with a plurality of micro connectors of the present invention simultaneously.
Fig. 7 B illustrates the schematic diagram that the insert of Fig. 7 A separates with a plurality of micro connectors.
Description of reference numerals
10: insert 12: electrical junction
14: draw-in groove 20: insert
100: micro connector 112: silicon material layer
112 ': patterned silicon material layer 112a: first opening
116: insulating barrier 116 ': patterned insulation layer
116a: the second opening 116b: cantilever terminal
116c: 120: the first stressor layers of fixture
142: recess 142a: hole
150: 160: the first patterning photoresist layers of conductive part
170: the second patterning photoresist layer D1: first direction
D2: second direction E1: first end
E2: the second end G: gap
L: plant path S: space
S1: first surface S2: second surface
S110～S170: each step
Embodiment
Figure 1A illustrates the micro connector of one embodiment of the invention and the schematic diagram of insert, and Figure 1B illustrates the micro connector of Figure 1A and the exploded view of insert.Please also refer to Figure 1A and Figure 1B, the micro connector 100 of present embodiment is suitable for being provided in the lightening electronic installation, and the insert 10 that is suitable for planting in the micro connector 100, so that electronic installation has preferable effective utilization.The micro connector 100 of present embodiment comprises that mainly patterned silicon material layer 112 ', material for example are silicon dioxide (SiO
2) patterned insulation layer (insulator) 116 ', at least one first stressor layers 120, at least one second stressor layers 130 and lid 140.Wherein, first stressor layers 120 for example is diamond-like-carbon (diamond like carbon, DLC) film or other suitable materials, the material of second stressor layers 130 for example are gold (Au) or other suitable materials, and the material of lid 140 for example is a silicon (Si).
In the present embodiment, patterned silicon material layer 112 ' has the first opening 112a, patterned insulation layer 116 ' is to be equipped on the patterned silicon material layer 112 ', and patterned insulation layer 116 ' has the second opening 116a corresponding with the first opening 112a and at least one cantilever terminal 116b (among Figure 1A and Figure 1B be example with 5 cantilever terminal 116b), and each cantilever terminal 116b is the top that protrudes from the first opening 112a from the inwall of the second opening 116a, one side.In addition, first stressor layers 120 is to be covered on the first end E1 of cantilever terminal 116b away from the second opening 116a inwall, and second stressor layers 130 then is to be covered on the first end E1 cantilever terminal 116b and first stressor layers 120 in addition.Wherein, cantilever terminal 116b have towards the first surface S1 of the first opening 112a and with the corresponding second surface S2 of first surface S1, and first stressor layers 120 and second stressor layers 130 for example are to be equipped on the second surface S2.
Above-mentioned first stressor layers 120 for example is a compressive stress layer, and second stressor layers 130 for example is the tensile stress layer, therefore the part cantilever terminal 116b that is coated with first stressor layers 120 can be subjected to the effect of compressive stress layer 120 and produce deformation, and towards first direction D1 bending (first direction D1 for example is the direction towards the first opening 112a), then can be subjected to the effect of tensile stress layer 130 and produce deformation as for the part cantilever terminal 116b that is coated with second stressor layers 130, and from the inwall of the second opening 116a towards the second direction D2 bending (second direction D2 for example be direction away from first opening 112a) relative with first direction D1, and cantilever terminal 116b can control its out-of-plane shape (out-of-plane shape) by first stressor layers 120 and second stressor layers 130.Wherein, present embodiment can control the length of cantilever terminal 116b so that it has good structural strength, therefore utilize first stressor layers 120 and second stressor layers 130 to control after its out-of-plane shape of cantilever terminal 116b, preferable forward contact force is promptly arranged between cantilever terminal 116b and the insert 10, between second stressor layers 130 on the cantilever terminal 116b and the insert 10 preferable electrical connection is also arranged.
In addition, the micro connector 100 of present embodiment more can comprise at least one and the corresponding conductive part 150 of cantilever terminal 116b (be among Figure 1A and Figure 1B be equally be example with 5 conductive parts 150).Wherein, these conductive parts 150 are formed at the metal level on the partially patterned insulating barrier 116 ' simultaneously when being second stressor layers 130 on making cantilever terminal 116b, and each conductive part 150 electrically connects with second stressor layers 130 on the respective cantilevered terminal 116b of institute.140 of the lids of present embodiment are to be equipped on the patterned insulation layer 116 ', and cover these cantilever terminal 116b and conductive part 150, are not vulnerable to outside destroy with protection cantilever terminal 116b and conductive part 150.
In addition, present embodiment can be provided with a plurality of hole 142a that periodically arrange in a recess 142 of lid 140 bottom surfaces, to increase lid 140 its integrally-built rigidity.In addition, the designs that a plurality of hole 142a that periodically arrange are set of the recess 142 in lid 140 bottom surfaces also can make micro connector 100 have anti electromagnetic wave and disturb (electromagnetic interference, effect EMI).On the other hand, when lid 140 is equipped on the patterned insulation layer 116 ', can exist clearance G (to please refer to Fig. 1 C between the recess 142 of lid 140 and the conductive part 150, it illustrates the insert of Figure 1A and micro connector in the schematic diagram of another angle), and this enforcement can be controlled the impedance of conductive part 150 by clearance G, and then makes the impedance matching of second stressor layers 130 on the cantilever terminal 116b (second stressor layers 130 also is conduction property good metal layer) and conductive part 150.
In the present embodiment, when lid 140 is equipped on patterned insulation layer 116 ', can have space S between lid 140 and the cantilever terminal 116b, insert 10 promptly is suitable for being inserted in this space S, and joins with second stressor layers 130 of these cantilever terminal 116b.Wherein, because second stressor layers, 130 its materials on the cantilever terminal 116b for example are the good gold of conduction property, therefore when the electrical junction 12 of insert 10 joins with second stressor layers 130 on the cantilever terminal 116b, between the electrical junction 12 of insert 10 and second stressor layers 130 the excellent electrical property annexation is arranged promptly, to transmit electrical signals.Wherein, because present embodiment is to make second stressor layers with signal transmission effect on the cantilever terminal with insulation effect, therefore carrying out signal when transmitting when micro connector, signal can transmit by second stressor layers effectively, transmission signals is difficult for producing (crosstalk) phenomenon of crosstalking, and can guarantee integrality (the Signal Integrity when signal transmits; SI).
On the other hand, for insert 10 can firmly be inserted in the micro connector 100 of present embodiment, patterned insulation layer 116 ' more can comprise at least one fixture 116c (among Figure 1A and Figure 1B be example with 2 fixture 116c), these fixtures 116c for example is the top that protrudes from the first opening 112a from the inwall of the second opening 116a opposite side towards the direction of cantilever terminal 116b, and when insert 10 is inserted in space S, fixture 116c can be sticked in the draw-in groove 14 (draw-in groove 14 for example is to be equipped on the one side of insert 10 towards patterned insulation layer 116 ') of insert 10, and then makes insert 10 firmly to be fixed in the micro connector 100.
In addition, when present embodiment is made first stressor layers 120 and second stressor layers 130 on cantilever terminal 116b, also can on fixture 116c, form first stressor layers 120 and second stressor layers 130 simultaneously.Say that further first stressor layers 120 can be covered on the second end E2 of fixture 116c away from the second opening 116a inwall, and second stressor layers 130 can be covered on the second end E2 fixture 116c and first stressor layers 120 in addition.Thus, the partial fixing spare 116c that is coated with second stressor layers 130 can be from the second opening 116a inwall towards direction (the being second direction D2) bending away from the first opening 112a, and the partial fixing spare 116c that is coated with first stressor layers 120 then can be towards direction (the being first direction D1) bending of the first opening 112a.That is to say that fixture 116c can control its out-of-plane shape by first stressor layers 120 and second stressor layers 130 equally.
Above do explanation at the composition member of the micro connector of present embodiment and the annexation between member.Next, present embodiment will elaborate at the process that insert is inserted in micro connector.
The insert that Fig. 2 A to Fig. 2 D illustrates Figure 1A is inserted in the schematic flow sheet of micro connector.At first, please refer to Fig. 2 A to Fig. 2 C, the cantilever terminal 116b of present embodiment and fixture 116c are that the plant path L that is positioned at insert 10 goes up (shown in Fig. 2 A), and before insert 10 is inserted in micro connector 100 along plant path L, present embodiment can utilize thermal actuation to make cantilever terminal 116b and fixture 116c move (shown in Fig. 2 B) towards the direction of the first opening 112a, and insert 10 can be inserted in micro connector 100 (shown in Fig. 2 C) under the condition of zero insertion force.In more detail, present embodiment for example is the bulk temperature that promotes micro connector 100, make thermal coefficient of expansion (coefficient thermal expansion, CTE) different cantilever terminal 116b, first stressor layers 120 and second stressor layers 130 has expansion in various degree, and whole cantilever terminal 116b and position first stressor layers 120 and second stressor layers 130 thereon promptly can produce the phenomenon of bending.Wherein, the thermal coefficient of expansion of second stressor layers 130 for example is the thermal coefficient of expansion greater than cantilever terminal 116b, therefore when the bulk temperature of micro connector 100 promotes, second stressor layers, 130 its degrees of expansion of expanded by heating can be greater than the degree of cantilever terminal 116b at expanded by heating, and cantilever terminal 116b (or fixture 116c) promptly can be subjected to the effect of second stressor layers 130 and flexibly bend towards the first opening 112a.Thus, cantilever terminal 116b and fixture 116c promptly no longer are on the plant path L of insert 10, and insert 10 can successfully be inserted in the micro connector 100.
After insert 10 is inserted in micro connector 100, then shown in Fig. 2 D, make the bulk temperature of micro connector 100 return back to its initial temperature, so that cantilever terminal 116b and fixture 116c and insert 10 join.That is, after the bulk temperature of micro connector 100 returns back to initial temperature, cantilever terminal 116b (or fixture 116c) promptly no longer is subjected to the effect of second stressor layers 130, cantilever terminal 116b and fixture 116c promptly can flexibly return back on the plant path L of insert 10, to join with the insert 10 that is inserted in the micro connector 100.Thus, second stressor layers 130 on the cantilever terminal 116b can be electrically connected with insert 10, with the transmission electrical signals, and fixture 116c can be sticked in the one side of insert 10 silicon substrate 110 on insulating barrier, so that insert 10 can firmly be fixed in the micro connector 100.
What deserves to be mentioned is, when the external environment condition current overload (over-load) of micro connector 100, the electric current of overload can cause the bulk temperature of micro connector 100 to raise equally, and cantilever terminal 116b and position first stressor layers 120 and second stressor layers 130 thereon promptly can be subjected to thermal actuation and order about and flexibly bend towards the first opening 112a, and contact with patterned silicon material layer 112 ', and the electric current of overload can conduct to patterned silicon material layer 112 ' by the cantilever terminal 116b of elasticity bending, and by ground structure (not illustrating) electric current of overload is derived.Thus, the electric current of overload promptly is difficult for causing micro connector 100 or the circuit of insert 10 inside impaired.That is the micro connector 100 of present embodiment has good overcurrent protection (over-load protection) effect.
After the composition structure of understanding micro connector and flow process that insert is inserted in micro connector, next, present embodiment will be done explanation at the manufacture method of micro connector.
Please refer to Fig. 3, it illustrates the making flow chart of the micro connector of one embodiment of the invention, and the manufacture method of the micro connector of present embodiment mainly comprises the following steps: at first, as described in step S110, provides silicon material layer.Then, as described in step S120, on silicon material layer, form insulating barrier.And then, as described in step S130, patterned insulation layer, to form patterned insulation layer, wherein patterned insulation layer has second opening and at least one cantilever terminal, and second opening exposes the part silicon material layer.Then, as described in step S140, form first stressor layers on away from the first end of the second opening inwall in cantilever terminal.Then, as described in step S150, on the cantilever terminal and first stressor layers, form second stressor layers again.Then, as described in step S160, remove and join with cantilever terminal and part silicon material layer that second opening is exposed, forming first opening in silicon material layer, and make cantilever terminal unsettled.Afterwards, as described in step S170, provide lid, and lid is assembled to patterned insulation layer.Thus, can finish the making of the micro connector of present embodiment.Hereinafter, present embodiment will illustrate the manufacturing process of micro connector with more detailed process schematic representation.
Fig. 4 A to Fig. 4 L illustrates the process schematic representation of the micro connector of one embodiment of the invention, and Fig. 5 A to Fig. 5 L illustrates among Fig. 4 A to Fig. 4 L the profile along I-I ' line, and Fig. 6 A to Fig. 6 L illustrates among Fig. 4 A to Fig. 4 L the profile along II-II ' line.The manufacture method of the micro connector of present embodiment is as described below: at first, shown in Fig. 4 A, Fig. 5 A and Fig. 6 A, provide silicon material layer 112.Then, shown in Fig. 4 B, Fig. 5 B and Fig. 6 B, forming material on silicon material layer 112 for example is silicon dioxide (SiO
2) insulating barrier 116.
Then, shown in Fig. 4 C, Fig. 5 C and Fig. 6 C, patterned insulation layer 116 (please refer to Fig. 5 B), to form patterned insulation layer 116 ', patterned insulation layer 116 ' has the second opening 116a and at least one cantilever terminal 116b (among Fig. 4 C be example with 5 cantilever terminal 116b), and the second opening 116a exposes the silicon material layer 112 of part.In addition, present embodiment when making cantilever terminal 116b, also can define at least one fixture 116c (among Fig. 4 C be example with 2 fixture 116c) at patterned insulation layer 116 simultaneously.Each above-mentioned cantilever terminal 116b protrudes from the inwall of the second opening 116a, one side, and each fixture 116c then for example is that the inwall from the second opening 116a opposite side protrudes towards the direction of cantilever terminal 116b.What deserves to be mentioned is, because present embodiment can be produced in order to insert is fixed in the fixture 116c in the micro connector when making cantilever terminal 116b simultaneously, therefore compared to known technology, present embodiment promptly need not in the technology after the micro connector extra on micro connector assembling any in order to the fixing fixed structure of insert, promptly the micro connector of present embodiment promptly has preferable make efficiency.
Present embodiment can define fixture 116c simultaneously when making cantilever terminal 116b.Similarly, present embodiment also can carry out same technology afterwards to fixture 116c when cantilever terminal 116b is carried out back technology.Therefore, in the manufacturing process of described hereinafter micro connector 100, present embodiment is that example is done explanation with cantilever terminal 116b only.
Form patterned insulation layer 116 ' afterwards, then shown in Fig. 4 D to Fig. 4 F, Fig. 5 D to Fig. 5 F and Fig. 6 D to Fig. 6 F, in the last formation of first end E1 first stressor layers 120 of each cantilever terminal 116b away from the second opening 116a inwall.Wherein, present embodiment for example is to form the first patterning photoresist layer (patterned photoresist layer) 160 in advance on the part silicon material layer 112 that patterned silicon insulating barrier 116 ' and the second opening 116a are exposed, and the first patterning photoresist layer 160 exposes the first end E1 (as Fig. 4 D, Fig. 5 D and Fig. 6 D shown in) of cantilever terminal 116b away from the second opening 116a inwall, and the method that forms the first patterning photoresist layer 160 for example is a photoetching process.
From the above, on the part silicon material layer 112 that patterned silicon insulating barrier 116 ' and the second opening 116a are exposed, form after the first patterning photoresist layer 160, then to go up formation for example be first stressor layers 120 (shown in Fig. 4 E, Fig. 5 E and Fig. 6 E) of compressive stress layer to the first end E1 that is exposed in the first patterning photoresist layer 160 and the first patterning photoresist layer 160, and first stressor layers 120 for example is the preferable diamond-like carbon film of abrasion resisting character.Afterwards, remove first stressor layers 120 (shown in Fig. 4 F, Fig. 5 F and Fig. 6 F) on the first patterning photoresist layer 160 (please refer to Fig. 5 D) and the first patterning photoresist layer 160.In the present embodiment, the method that removes first stressor layers 120 on the first patterning photoresist layer 160 and the first patterning photoresist layer 160 for example is to peel off (lift-off) technology.In more detail, originally be implemented in when utilizing photoresist stripper (stripper) that the first patterning photoresist layer 160 is removed, can jointly first stressor layers 120 on the first patterning photoresist layer 160 be removed.Thus, present embodiment is promptly gone up in the first end E1 of each cantilever terminal 116b and is formed first stressor layers 120.
After the first end E1 of each cantilever terminal 116b goes up formation first stressor layers 120, then shown in Fig. 4 G to Fig. 4 I, Fig. 5 G to Fig. 5 I and Fig. 6 G to Fig. 6 I, on first stressor layers 120 of each cantilever terminal 116b and each cantilever terminal 116b, form second stressor layers 130.Wherein, present embodiment for example is to form the second patterning photoresist layer 170 in advance on the part silicon material layer 112 that patterned insulation layer 116 ' and the second opening 116a are exposed, and the second patterning photoresist layer 170 can expose cantilever terminal 116b and be formed at first stressor layers 120 (shown in Fig. 4 G, Fig. 5 G and Fig. 6 G) on the first end E1.Identical with the formation method of the first patterning photoresist layer 160, the method that forms the second patterning photoresist layer 170 also for example is a photoetching process.
On the part silicon material layer 112 that patterned insulation layer 116 ' and the second opening 116a are exposed, form after the second patterning photoresist layer 170, then in the second patterning photoresist layer 170, second stressor layers 130 that forms material on cantilever terminal 116b that the second patterning photoresist layer 170 is exposed and first stressor layers 120 on the first end E1 and for example be gold is (as Fig. 4 H, shown in Fig. 5 H and Fig. 6 H), and for example being mode with sputter (sputter), second stressor layers 130 is formed at the second patterning photoresist layer 170, on the cantilever terminal 116b and first stressor layers 120 on the first end E1 that the second patterning photoresist layer 170 is exposed.In the present embodiment, the above-mentioned second patterning photoresist layer 170 also can expose the partially patterned insulating barrier 116 ' that joins with each cantilever terminal 116b, and second stressor layers 130 also can be formed at by the mode of sputter on the partially patterned insulating barrier 116 ' that joins with each cantilever terminal 116b, to form a plurality of and the corresponding conductive part 150 of cantilever terminal 116b.
After forming second stressor layers 130, remove second stressor layers 130 (shown in Fig. 4 I, Fig. 5 I and Fig. 6 I) on the second patterning photoresist layer 170 and the second patterning photoresist layer 170.Identical with the method for first stressor layers 120 on removing the first patterning photoresist layer 160 and the first patterning photoresist layer 160, the mode that present embodiment removes second stressor layers 130 on the second patterning photoresist layer 170 and the second patterning photoresist layer 170 also for example is stripping technology, so present embodiment promptly repeats no more at this.
On first stressor layers 120 of each cantilever terminal 116b and each cantilever terminal 116b, form after second stressor layers 130, then shown in Fig. 4 J to Fig. 4 K, Fig. 5 J to Fig. 5 K and Fig. 6 J to Fig. 6 K, for example be to use etching solution to remove and join with cantilever terminal 116b and part silicon material layer 112 that the second opening 116a is exposed, have one of first opening 112a patterned silicon material layer 112 ' (shown in Fig. 4 J, Fig. 5 J and Fig. 6 J) with formation.And remove join with cantilever terminal 116b and part silicon material layer 112 that the second opening 116a is exposed after, each cantilever terminal 116b can be unsettled, and each cantilever terminal 116b can control its out-of-plane shape (shown in Fig. 4 K, Fig. 5 K and Fig. 6 K) by first stressor layers 120 and second stressor layers 130 that set thereon.Wherein, because each cantilever terminal 116b is in unsettled state, and first stressor layers 120 for example is a compressive stress layer, second stressor layers 130 for example is a tensile stress layer, therefore the part cantilever terminal 116b that is equipped with tensile stress layer 130 can be subjected to tensile stress effect and from the inwall of the second opening 116a towards direction bending away from the first opening 112a, and the part cantilever terminal 116b (being first end E1) that is equipped with compressive stress layer 120 can be subjected to the effect of compression and towards the bending of the direction of the first opening 112a, and then make each cantilever terminal 116b can form predetermined out-of-plane shape.For flexibly adjusting the tension force effect of 130 couples of cantilever terminal 116b of second stressor layers, present embodiment also can be by being provided with a plurality of perforates (not illustrating) to reduce by the stress of 130 couples of cantilever terminal 116b of second stressor layers on second stressor layers 130.Afterwards, shown in Fig. 4 L, Fig. 5 L and Fig. 6 L, provide lid 140, and lid 140 is assembled to patterned insulation layer 116 ' with covering cantilever terminal 116b, and then protection cantilever terminal 116b is not collided by external force.
In other preferred embodiments, insert 20 also can dock with a plurality of micro connectors 100 simultaneously and (please refer to Fig. 7 A and Fig. 7 B, Fig. 7 A illustrates the schematic diagram that insert docks with a plurality of micro connectors of the present invention simultaneously, and Fig. 7 B illustrates the schematic diagram that the insert of Fig. 7 A separates with a plurality of micro connectors), the present invention does not impose any restrictions at this.
In sum, the present invention covers first stressor layers in cantilever terminal on away from the first end of the second opening inwall, and covers second stressor layers on the cantilever terminal beyond the first end and first stressor layers.Wherein, for example be that second stressor layers of tensile stress layer can make the part cantilever terminal of joining with the second opening inwall towards the direction bending away from first opening, first stressor layers that for example is compressive stress layer can make the part cantilever terminal (being first end) away from the second opening inwall bend towards the direction of first opening, and cantilever terminal promptly has preferable out-of-plane shape.
Compared to known technology, the present invention is by forming residual stress layer (tensile stress layer and compressive stress layer) to control its out-of-plane shape of cantilever terminal effectively on cantilever terminal, having promoted the making rate of finished products of micro connector.Wherein, the present invention understands application examples, and body etching or other suitable modes remove and join with cantilever terminal and part silicon material layer that second opening is exposed in this way, making has suitable space between cantilever terminal and the silicon material layer, and the applied etching solution of above-mentioned technology can be removed in subsequent technique easily.Thus, cantilever terminal promptly can not be subjected to residuing in the influence of the etching solution adsorption phenomena that its surface tension produces between patterned insulation layer and patterned silicon material layer, and causes the not good situation of out-of-plane shape of cantilever terminal to take place.In other words, cantilever terminal of the present invention has good out-of-plane shape, and micro connector promptly has preferable making rate of finished products.In addition, micro connector of the present invention can be made with easy micro electronmechanical technology, therefore in the technology of micro connector, the making of cantilever terminal is not vulnerable to the such environmental effects of technology, the present invention can promote the making rate of finished products of micro connector, and makes micro connector have batch a large amount of production advantages of change.
From the above, because the present invention makes a plurality of cantilever terminal on insulating barrier, and making has second stressor layers that signal transmits effect on each cantilever terminal, therefore carrying out signal when transmitting when micro connector, signal can transmit by second stressor layers effectively, that is transmission signals can not conduct by conductor or semiconductor, and said transmission signal promptly has the preferable sigtnal interval from degree.In other words, the phenomenon of crosstalking that causes in the time of can reducing the signal transmission.In addition, be inserted in the process of micro connector at insert, the present invention can make the different cantilever terminal of thermal coefficient of expansion, first stressor layers and second stressor layers generation expansion in various degree by the bulk temperature that improves micro connector, and then make whole cantilever terminal and position first stressor layers and second stressor layers thereon produce bending, cantilever terminal promptly no longer is on the plant path of insert, and insert can successfully be inserted in the micro connector.That is the present invention makes insert be inserted in the micro connector in the mode of zero insertion force by thermal actuation.The design of above-mentioned thermal actuation also can make micro connector have good overcurrent protection effect.
In addition, have preferable out-of-plane shape owing to cantilever terminal has, so preferable forward contact force is promptly arranged between cantilever terminal and insert, between second stressor layers on the cantilever terminal and the insert preferable electrical connection is arranged promptly.In addition, meeting of the present invention is produced when making cantilever terminal simultaneously in order to insert being fixed in the fixture in the micro connector, and need not additionally to be provided with on micro connector any in order to insert is fixed in the fixed structure in the micro connector.In other words, micro connector of the present invention has preferable make efficiency.
In addition, the recess of meeting of the present invention in the lid bottom surface of micro connector is provided with a plurality of holes of periodically arranging, and above-mentioned design can make micro connector have the anti electromagnetic wave effects of jamming.In addition, when lid was equipped on patterned insulation layer, the crack made the impedance matching of second stressor layers (second stressor layers is a conduction property good metal layer) and conductive part on the cantilever terminal between the present invention can utilize between lid recess and conductive part.
Moreover, comparatively cheap in order to the cost of the silicon material layer of making micro connector in the present invention, therefore utilize the SOI substrate to make micro connector compared to known technology, micro connector of the present invention has cheaper product cost.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; the technical staff without departing from the spirit and scope of the present invention in any affiliated technical field; when can doing a little change and retouching, so protection scope of the present invention is when looking being as the criterion that accompanying Claim defines.
Claims (19)
1. a micro connector is suitable for the insert of planting, and this micro connector comprises:
The patterned silicon material layer has first opening;
Patterned insulation layer, be equipped on this patterned silicon material layer, this patterned insulation layer has second opening corresponding with this first opening and at least one cantilever terminal, and wherein this cantilever terminal is the top that protrudes from this first opening from the inwall of this second opening, one side;
At least one first stressor layers is covered on the first end of this cantilever terminal away from this second opening inwall, and this first stressor layers is a compressive stress layer;
At least one second stressor layers, be covered on this first end this cantilever terminal and this first stressor layers in addition, this second stressor layers is the tensile stress layer, and the thermal coefficient of expansion of this second stressor layers is greater than the thermal coefficient of expansion of this cantilever terminal, this second stressor layers is a conduction, this cantilever terminal of part that wherein is coated with this first stressor layers bends towards first direction, and this cantilever terminal of part that is coated with this second stressor layers bends towards second direction from the inwall of this second opening, this first direction is the direction towards this first opening, and this second direction is the direction away from this first opening; And
Lid is equipped on this patterned insulation layer, and covers this cantilever terminal, wherein have the space between this lid and this cantilever terminal, and this insert is suitable for being plugged on this space, and joins with this cantilever terminal.
2. micro connector as claimed in claim 1, wherein this cantilever terminal have first surface and with the corresponding second surface of this first surface, this first surface is towards this first opening, and this first stressor layers and this second stressor layers of part are equipped on this second surface.
3. micro connector as claimed in claim 1, wherein this patterned insulation layer also comprises at least one fixture, this fixture is the top that protrudes from this first opening from the inwall of this second opening opposite side, wherein this fixture protrudes towards the direction of this cantilever terminal, another first stressor layers is covered on the second end of this fixture away from this second opening inwall, another second stressor layers is covered on this fixture and this another first stressor layers beyond this second end, this fixture of part that is coated with this another second stressor layers towards the direction bending away from this first opening, and is coated with the direction bending of this fixture of part of this another first stressor layers towards this first opening from this second opening inwall.
4. micro connector as claimed in claim 3, wherein when this insert was inserted in this space, this fixture was sticked in the one side of this insert towards this patterned insulation layer, to fix this insert.
5. micro connector as claimed in claim 1, wherein the material of this patterned insulation layer is a silicon dioxide.
6. micro connector as claimed in claim 1, wherein the material of this second stressor layers is the tensile stress film of conduction.
7. micro connector as claimed in claim 1, wherein this first stressor layers is a compressive stress film.
8. micro connector as claimed in claim 1, wherein the material of this lid is a silicon.
9. micro connector as claimed in claim 1 also comprises at least one conductive part, and this conductive part is corresponding with this cantilever terminal, and electrically connects with this second stressor layers.
10. micro connector as claimed in claim 9, wherein the bottom surface of this lid has recess, and this recess is provided with a plurality of holes, when this lid is equipped on this patterned insulation layer, has the gap between this recess and this conductive part.
11. micro connector as claimed in claim 10, wherein this hole periodically is arranged in this recess.
12. the manufacture method of a micro connector comprises:
Silicon material layer is provided;
On this silicon material layer, form insulating barrier;
This insulating barrier of patterning, to form patterned insulation layer, wherein this patterned insulation layer has second opening and at least one cantilever terminal, and this second opening exposes this silicon material layer of part;
Form first stressor layers in this cantilever terminal on away from the first end of this second opening inwall, this first stressor layers is a compressive stress layer;
Form second stressor layers on this cantilever terminal and this first stressor layers, this second stressor layers is the tensile stress layer;
Remove and join with this cantilever terminal and this silicon material layer of part that this second opening is exposed, to form first opening in this silicon material layer, and make this cantilever terminal unsettled, the part suspended wall terminal that wherein is coated with this second stressor layers bends towards the direction away from this first opening towards the inwall of this second opening, is coated with the direction bending of the part suspended wall terminal of this first stressor layers towards this first opening; And
Lid is provided, and this lid is assembled to this patterned insulation layer.
13. the manufacture method of micro connector as claimed in claim 12, the method that wherein forms this first stressor layers on this first end of this cantilever terminal comprises:
Form the first patterning photoresist layer on this silicon material layer of part that this patterned insulation layer and this second opening are exposed, wherein this first patterning photoresist layer exposes this first end;
On this first end that this first patterning photoresist layer and this first patterning photoresist layer are exposed, form this first stressor layers; And
Remove this first stressor layers on this first patterning photoresist layer and this first patterning photoresist layer.
14. the manufacture method of micro connector as claimed in claim 13, the method that wherein forms this first patterning photoresist layer comprises photoetching process.
15. the manufacture method of micro connector as claimed in claim 13, the method that wherein removes this first stressor layers on this first patterning photoresist layer and this first patterning photoresist layer comprises stripping technology.
16. the manufacture method of micro connector as claimed in claim 13, the method that wherein forms this second stressor layers on this cantilever terminal and this first stressor layers comprises:
Form the second patterning photoresist layer on this silicon material layer of part that this patterned insulation layer and this second opening are exposed, wherein this second patterning photoresist layer exposes this cantilever terminal and is formed at this first stressor layers on this first end;
Expose this cantilever terminal and be formed in this second patterning photoresist layer, this second patterning photoresist layer and form this second stressor layers on this first stressor layers on this first end; And
Remove this second stressor layers on this second patterning photoresist layer and this second patterning photoresist layer.
17. the manufacture method of micro connector as claimed in claim 16, the method that wherein forms this second patterning photoresist layer comprises photoetching process.
18. the manufacture method of micro connector as claimed in claim 16, the method that wherein removes this second stressor layers on this second patterning photoresist layer and this second patterning photoresist layer comprises stripping technology.
19. the manufacture method of micro connector as claimed in claim 12 wherein removes and joins with this cantilever terminal and the method for this silicon material layer of part that this second opening is exposed comprises the body etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101625857A CN101414715B (en) | 2007-10-19 | 2007-10-19 | Miniature connector and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007101625857A CN101414715B (en) | 2007-10-19 | 2007-10-19 | Miniature connector and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101414715A CN101414715A (en) | 2009-04-22 |
| CN101414715B true CN101414715B (en) | 2011-01-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007101625857A Active CN101414715B (en) | 2007-10-19 | 2007-10-19 | Miniature connector and preparation method thereof |
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| CN (1) | CN101414715B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112014778B (en) * | 2020-08-24 | 2023-11-07 | 歌尔微电子有限公司 | Magneto-resistive sensor of micro-electromechanical system, sensor unit and electronic equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6164993A (en) * | 1999-02-12 | 2000-12-26 | Micron Technology, Inc. | Zero insertion force sockets using negative thermal expansion materials |
| US6619785B1 (en) * | 1999-03-31 | 2003-09-16 | Seiko Epson Corporation | Method of connecting electrode, narrow pitch connector, pitch changing device, micromachine, piezoelectric actuator, electrostatic actuator, ink-jet head, ink-jet printer, liquid crystal device, and electronic device |
| CN1643741A (en) * | 2002-03-18 | 2005-07-20 | 纳米纳克斯公司 | A miniaturized contact spring |
| CN1897362A (en) * | 2005-07-15 | 2007-01-17 | 财团法人工业技术研究院 | Production of micro-connector and its terminal shape |
-
2007
- 2007-10-19 CN CN2007101625857A patent/CN101414715B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6164993A (en) * | 1999-02-12 | 2000-12-26 | Micron Technology, Inc. | Zero insertion force sockets using negative thermal expansion materials |
| US6619785B1 (en) * | 1999-03-31 | 2003-09-16 | Seiko Epson Corporation | Method of connecting electrode, narrow pitch connector, pitch changing device, micromachine, piezoelectric actuator, electrostatic actuator, ink-jet head, ink-jet printer, liquid crystal device, and electronic device |
| CN1643741A (en) * | 2002-03-18 | 2005-07-20 | 纳米纳克斯公司 | A miniaturized contact spring |
| CN1897362A (en) * | 2005-07-15 | 2007-01-17 | 财团法人工业技术研究院 | Production of micro-connector and its terminal shape |
Non-Patent Citations (1)
| Title |
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| JP特开平11-329633A 1999.11.30 |
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| CN101414715A (en) | 2009-04-22 |
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