CN101459050B - Method and apparatus for metallic layer front wafer surface presoaking for electrochemical or chemical deposition - Google Patents
Method and apparatus for metallic layer front wafer surface presoaking for electrochemical or chemical deposition Download PDFInfo
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- CN101459050B CN101459050B CN 200710172313 CN200710172313A CN101459050B CN 101459050 B CN101459050 B CN 101459050B CN 200710172313 CN200710172313 CN 200710172313 CN 200710172313 A CN200710172313 A CN 200710172313A CN 101459050 B CN101459050 B CN 101459050B
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Abstract
The invention discloses a method for pre-soaking chip surfaces, which can improve soakage between electrolyte and the chip surface during mutually contacting by pre-attaching a liquid adsorption layer on the overall front surface of a chip before a metal deposition process. The liquid adsorption layer can be realized by transmitting vaporized liquid molecules from gas phase under a risen temperature (relative to that of the chip) and then condensing the liquid molecules on the chip surface.
Description
Technical field
The present invention relates to more particularly, relate to pre-infiltration wafer surface for the surface infiltration for the wafer before electrochemistry or the chemical deposition metal level.
Background technology
Advanced interconnect structure in ultra-large integrated (ULSI) circuit partly is by electrochemistry or chemistry (being also referred to as " electrolessly ") deposition process manufacturing, this electrochemistry or chemical deposition processing procedure from one or more electrolyte metal material, normally copper is deposited on wafer surface.In deposition process, at first immerse the wafer of a drying in one electrolyte solution or an electrolyte is sprayed on the wafer of a drying, but may run into several problems like this.One of them serious problem be wafer surface infiltrated by halves the place that causes not touched by electrolyte by electrolyte can't depositing metal layers.Be usually expressed as the disappearance of deposited film and large hole and the part that is not filled in through hole and groove, occur by the caused defective relevant with infiltration of this kind mechanism, and defects will cause a large amount of devices to be scrapped.
Incomplete infiltration is a kind of surface physics phenomenon between electrolyte and the wafer, and may be caused by many technological parameters that affect the surface nature of electrolyte and wafer.Give some instances, wafer surface and contain compatibility between the electrolyte of all kinds organic additive, wafer by the environment that is touched before plating or the chemical plating, electrolyte aging, in handling process current processing step and before processing step between stand-by period, processing step before can be that the thin metal level of deposition one deck or grinding are so that metal and dielectric portion expose.Waiting time is even more important, because the during this period of time oxidation meeting of wafer surface greatly changes the surface nature of wafer.
The method that a kind of wafer surface of improving deposited copper infiltrates is to implement the pre-step that infiltrates at electrochemical deposition equipment, discloses such as U.S. Patent application US 2004/0069644 and US 2007/7223323.According to this method, wafer at first infiltrates in the rotation of using deionized water (DIW)-wetting-dry (SRD) module in advance.Want the combination of all speeds of rotation (RPM) and deionized water (DIW) flow velocity to improve water covering in wafer surface.After prewetting, when it was dipped into a plating bath, this wafer surface should be carried a thin water layer.Metal film deposition equipment is added the pre-cavity that infiltrates have been increased its overall size and has needed larger space that related device is installed.
The method of the described pre-soakage layer of another kind of realization is to use built-in deionized water (DIW) nozzle that is positioned at the electroplating processes module.Adopt this method, when wafer is fixed in the rotation wafer chuck device and facing to described electrolyte the time, DIW is injected into wafer surface.Centrifugal force so that DIW be in always the rotation wafer the surface on and can not fall in the electrolyte.U.S. Patent application 2006/7146994 has disclosed a kind of like this method.This method does not need additional space, thereby the scale of whole equipment is constant; Yet this method stable bad is if will cause DIW to be injected in the electrolyte when DIW nozzle has small skew or wafer rotation to decrease.
These two kinds of methods have three intrinsic problems: in a large-tonnage factory, the water layer that each wafer is brought in the electrolyte will finally cause the integral body dilution of electroplating solution, and then change the process conditions that set (1).(2) wafer is brought the local dilution of electrolyte that water layer in the electrolyte causes wafer surface region into, especially by DIW be full of will depositing metal layers through hole gap and groove.The part dilution of electrolyte will cause and form cavity and unfilled structure after plating.And (3) prolong the time of whole technological process, be well understood that general SRD processing meeting can't be thrown off at the water layer that wafer surface stays several micron thick, because the viscous drag of the current in the skim too large (being inversely proportional to the cube of its thickness).The thickness of water layer can only reduce by evaporation; Yet this just needs to increase the more processing time, the production capacity of complete equipment thereby can be affected.And each wafer is carried out constant evaporation process is very difficult realization, because the priority of the motion of manipulator and rise/fall all can exert an influence to condition and time of evaporation in the semiconductor production equipment.
Another kind method is by wettability enhancers, generally be a kind of surfactant or one group of activating agent in order to reduce the surface tension of electrolyte, disclose such as U.S. Patent application 2004/6776893.The method on another kind of pre-processed wafer surface is to come the pre-processed wafer surface with the liquid that contains these wettability enhancers in an independent module before being placed on wafer in the plating bath.This method has strengthened the complexity of processing and has greatly increased the cost of processing and monitoring.Along with the wafer surface physical dimension continues to reduce, described such as above-mentioned three kinds of methods, thereby infiltrating the method for various wafer surface in advance, the gas of replacing with the liquid of thickness all is faced with great challenge in nano level groove.
Summary of the invention
Thereby the present invention is by improving electrolyte and the infiltration of wafer surface when being in contact with one another at the additional liquid adsorption layer of the front surface of whole wafer before carrying out metal deposition process.The liquid adsorption layer that this pre-sets forms by the fluid molecule under the temperature that will be in (with respect to wafer) lifting is agglomerated to wafer from vapor phase surface.
The pre-infiltration is to finish by following process: the source that constantly produces steam provides the steam of gas phase, carries the fluid molecule of gas phase to condense after wafer surface, rather than utilizes sticking liquid to replace the gas that is full of front wafer surface.
Steam is static or the nozzle of relative movement of wafers is transferred to wafer surface by one.Described steam be under in check pressure heating in one pipeline liquid and produce.
The fluid molecule of vaporize enters in the little structure by steam convection current and scattering and permeating, compares with the Liquid Penetrant that is subject to the surface infiltration behavioral implications, and this method is very fast, but also is not subject to the impact of surface of solids attribute; Therefore it is identical covering the needed time of steam fully on the different chips surface.
Description of drawings
Fig. 1 a is the flow chart according to the pre-wet process of wafer surface of one embodiment of the invention;
The flow chart of Fig. 1 b pre-wet process of wafer surface according to another embodiment of the present invention;
Fig. 2 is the schematic diagram according to the wafer surface Prewetting apparatus of one embodiment of the invention.
Embodiment
Fig. 1 a illustrates for the pre-processing procedure that infiltrates of the wafer surface of metal level deposition.A kind of liquid, for example deionized water is used to form described liquid adsorption layer.This liquid will be heated to a predetermined temperature (shown in step 102).In one embodiment, described fluid temperature will be raised to 35 ℃-170 ℃.After being elevated to predetermined temperature, described liquid is by vaporize (shown in step 104).The vaporize used vapour of liquid excites (flash evaporation) or vector gas is broken through (flushing) described liquid finish.In the time of vaporize liquid, the pressure of steam is controlled in certain limit (shown in step 106).The gaseous phase partial pressure of vaporize liquid is monitored by a transducer.Before fluid molecule is passed to wafer surface, the steam that contains fluid molecule will mix with a vector gas medium, for example: air, nitrogen, helium and argon gas.(shown in step 108).When mixing gas phase fluid molecule and vector gas medium, the temperature of resulting mixture maintains (shown in step 110) in the predetermined scope always, so formed liquid adsorption layer is less than the surface tension of the liquid adsorption layer that at room temperature forms at elevated temperatures.In next step, the fluid molecule of having vaporized will be transported to wafer surface, then condense to form skim liquid.According to Fig. 1, in step 112, the molecule of liquid vapour and the mixture of vector gas are sent near wafer surface the environment.And in step 114, the large quantity of air in the environment of wafer surface is replaced by the molecule of liquid vapour and vector gas.In step 116, the molecule of liquid vapour is transported to from steam ambient in the patterned structures of wafer surface.In one embodiment, the molecule of liquid vapour being transported in through hole, groove and the dual damascene structure of wafer surface is that combination by gas phase convection current and diffusion realizes.Then, in step 118, form a pre-liquid level that infiltrates by the fluid molecule of adsorption multi-layer vaporize from steam at the front surface of whole wafer.In one embodiment, when wafer surface has the distribution of different surfaces free energy, can carry out selectively condensing of vaporize fluid molecule.The liquid adsorption layer that forms on the surface of high surfaces free energy can the triggering selection nucleation in ensuing metal level depositing operation.The thickness of preformed liquid adsorption layer generally has several nanometers, and its thickness is less than the formed pre-infiltration liquid adsorption layer of hydrodynamic action that passes through in the conventional art in flushing and the rotation, and the thickness of the pre-adsorption layer of liquid in the conventional art is tens of microns.In one embodiment, the thickness that adsorbs the liquid adsorption layer that forms by the multilayer of vaporize molecule on the wafer surface is subject to several factor controllings, for example: the content of the fluid molecule of vaporize, the temperature difference between steam and wafer, surface energy and heat of adsorption in the wafer surface surrounding environment.In one embodiment, when the temperature difference between steam and wafer surface when not being very large, the thickness of liquid level can generally be simulated by BET multilayer adsorption isotherm.And the content of the fluid molecule of vaporize can be adjusted according to the fluid molecule vapor partial pressure in the mixture in the wafer surface surrounding environment.Last step, shown in step 120, the adsorptive liquid layer that wafer surface is carried will contact with plating bath.In one embodiment, shown in optional step 119, if use the electrochemistry electroplating processes, can be applied to wafer surface with a bias voltage before electrolyte contacts, before step 120, just use so the optional step 119 that applies bias voltage, otherwise this step 119 can be omitted.Because the liquid adsorption layer is very thin, in the time of electrolyte contact wafer surface, from the dilution of the caused whole plating bath of this thin liquid adsorption layer, even in the situation of high yield, also is very little.For example, the whole percent dilution of the adsorptive liquid layer of 2 nanometer thickness is less 5000 times than the liquid level of 10 micron thick.
Fig. 1 b illustrates the another kind of processing procedure that infiltrates wafer surface for pre-, and it comes vaporize liquid with a kind of diverse ways.In step 132, a liquid, for example deionized water is heated.Then, in step 134, a vector gas, for example air, N2, He and Ar are washed in the liquid that (flush) heated, and then the steam of liquid mixes with vector gas and forms vapour mixture.In step 136, thereby the flow velocity of control vector gas is adjusted the content of liquid vapour molecule in the mist.The pressure (shown in step 138) of control vapour mixture.Step 140-150 is identical with above-mentioned steps 110-120.That is to say, in step 140, keep the temperature of mixture.In step 142, the fluid molecule of vaporize is sent near the environment of wafer surface.In step 144, a large amount of air is replaced by the fluid molecule of vaporize around the wafer surface.In step 146, the fluid molecule of vaporize is delivered to wafer surface and is transferred in the patterned structures from steam ambient.In step 148, the steam condensation in the steam ambient is formed a liquid adsorption layer to wafer surface.In step 150, the liquid adsorption layer that wafer surface is carried contacts with plating bath.One optional step 149 is provided, uses in the time of the electrochemistry electroplating processes, apply bias voltage.In another embodiment, the step of vaporize liquid can realize by other method, and for example steam excites (flashevaporation).
Should pre-infiltrate to process and can be used to semiconductor device interconnected structure or make pre-infiltration in the electric contact will be carried out the metal level deposition in electrolyte solution wafer surface, described electric contact comprises contact block (bump) and is used for the through-silicon-via structure of encapsulated semiconductor device.According to being included in metallic elements different in the electrolyte in the different metal layer deposition steps, for example electrolyte can contain Cu, Au, Ag, Ni, Ru and Co element and be used for encapsulated semiconductor device, and described liquid is different materials.Preformed liquid adsorption layer in wafer surface should be infiltrated by electrolyte and mix.
Fig. 2 illustrates a kind of device be used to implementing above-mentioned pre-infiltration processing.This device 200 comprises: substrate holding apparatus 202 is used for the base material that fixing has one or more pattern on it.Established metal level is the part surface of covering substrates 204 also.In one embodiment, motor 203 makes substrate holding apparatus 202 rotations.Steam conveying equipment 206 spray the molecule that contains an at least a thin liquid adsorption layer that will be condensed in substrate surface the steam of molecule.As shown in Figure 2, described steam conveying equipment 206 comprises: a nozzle or one group of nozzle 260, pipeline 262, locator 264, pressure regulator 266, divider wall 268 and filter 269.Filter 269 is provided at before the pressure regulator 266, and uses divider wall 268 isolation.Mechanical system 210 also is provided, and described mechanical system 210 is comprised of driver 212 and linking arm 211, the relative motion between their control steam conveying equipments 206 and the base material 204.Nozzle 260 is positioned at the zone near base material 204 surfaces, and nozzle 260 can be accommodated in independently in the processing module or be combined in the existing technical module, for example described plating module.If nozzle 260 is attached on the wafer transmission mechanical arm, the preformed liquid adsorption layer of this skim can also the process of wafer transmission in form.In one embodiment, nozzle 260 can be static or by driver base material be done relative motion.Continue to see Fig. 2, described device 200 further comprises steam generating equipment 208, and its partially liq converts steam to.As shown in Figure 2, steam generating equipment 208 comprises: conduit 280, liquid inlet 281, outlet 282, earth pressure release valve 283, choke valve 284, heater 285, pressure and temp control loop 286, vector gas entrance 287, liquid outflow end 288 and gas vent 289.Under the in check pressure heating conduit 280 in liquid with the generation steam.One dry gas, for example: air, N2, He or Ar are the carriers that carries the vaporize fluid molecule.One dry gas source 291 produces dry gas.Flow out in the liquid in the dry gas inflow catheter and from the exit, carry simultaneously the vaporize fluid molecule and before arriving at nozzle, pass through a pressure regulator.In one embodiment, described pressure and temp control loop temperature is arranged on 35 ℃ to170 ℃.Steam conveying circuit from the steam generator to the nozzle is heat insulation.Steam (vapor) outlet on steam conveying equipment 260 can have multiple direction and size.
Said elements: one group of nozzle 260, pipeline 262 and locator 264 can be based upon on the existing technical module, for example are combined in the metal level deposition module, are located immediately at the top, metal deposition chamber of containing electrolyte 290 as shown in Figure 2.
Claims (30)
1. pre-method that infiltrates wafer surface comprises:
Vaporize one liquid;
The fluid molecule of vaporize is transported near the wafer surface in the environment;
With near the vaporize fluid molecule displacement large quantity of air in the environment and they are transported to wafer surface and enter into patterned structures wafer surface;
The coagulating liq adsorption layer is on the wafer surface that comprises patterned structures from steam ambient;
Wafer surface with electrolyte contact carrying adsorptive liquid layer.
2. the method for claim 1 wherein can be infiltrated by electrolyte at the liquid that wafer surface forms the liquid adsorption layer.
3. the method for claim 1 wherein can be mixed by electrolyte at the liquid that wafer surface forms the liquid adsorption layer.
4. the method for claim 1 wherein excites vaporize liquid by steam.
5. the method for claim 1 wherein pours vector gas liquid and comes vaporize liquid.
6. method as claimed in claim 5, wherein from following one group of gas, select vector gas:
Air, N
2, He and Ar.
7. the method for claim 1 is wherein by gas phase diffusion and convection current ground in the patterned structures in conjunction with the through hole, groove and the dual damascene structure that the fluid molecule of vaporize are transported to wafer surface.
8. method claimed in claim 1, wherein said liquid adsorption layer is nano thickness, and by forming in the multilayer absorption of wafer surface to the vaporize molecule.
9. the method for claim 1, wherein the content of the vaporize fluid molecule in the wafer surface surrounding environment is regulated by the liquid vapour dividing potential drop in the mixture of the molecule of liquid vapour and vector gas.
10. the method for claim 1, the thickness of wherein said liquid adsorption layer is by the content control of the vaporize fluid molecule in the wafer surface surrounding environment.
11. the method for claim 1 is wherein controlled by the temperature difference between steam and the wafer surface at the thickness of the liquid adsorption layer on the wafer surface.
12. the method for claim 1, wherein the surface tension of formed liquid adsorption layer is less than the surface tension of formed liquid level under the room temperature at elevated temperatures.
13. the method for claim 1, wherein when wafer surface had different free surface energy distributions, the vaporize fluid molecule was optionally condensed.
The selectivity nucleation of triggering in ensuing metalized 14. method as claimed in claim 13, the selectivity of wherein said liquid adsorption layer are condensed.
15. the method for claim 1, wherein said method are used for semiconductor device interconnected structure and infiltrate in advance the wafer surface of carrying out the metal level deposition in electrolyte solution.
16. method as claimed in claim 15, wherein the metal ion in the electrolyte is selected from following one group of slaine: Cu, Au, Ag, Ni, Ru and Co.
17. the method for claim 1, wherein the method infiltrates the wafer surface of carrying out the metal level deposition in electrolyte solution in advance for the process that forms wire and solder joint when encapsulated semiconductor device.
18. method as claimed in claim 17, wherein the metal ion in the electrolyte is selected from following one group of slaine: Cu, Au, Ni, Sn, Pt and Ag.
19. the method for claim 1, wherein the method infiltrates the wafer surface of carrying out the metal level deposition in electrolyte solution in advance for the process that encapsulated semiconductor device forms the base material through hole.
20. method as claimed in claim 19, wherein the metal ion in the electrolyte is selected from following one group of slaine: Cu, Au, Ni, Sn, Pt and Ag.
21. one kind is used for the pre-device that infiltrates wafer surface, comprises:
Substrate holding apparatus, fixing are formed with the base material with one or more pattern on it, and the established metal level subregion on covering substrates surface at least;
The steam conveying equipment sprays the steam that contains at least a molecule, and this steam will condense into skim liquid adsorption layer at substrate surface;
Steam generating equipment changes into steam with liquid rotating partly;
Mechanical system, the relative motion between control steam conveying equipment and the base material.
22. device as claimed in claim 21, wherein said substrate holding apparatus, steam conveying equipment and mechanical system are in the processing module of a sealing.
23. device as claimed in claim 21, wherein said steam conveying equipment and mechanical system are integrated in the metal deposition module.
24. device as claimed in claim 21, wherein said steam conveying equipment is installed on the wafer transmission mechanical arm.
25. device as claimed in claim 21, wherein said vapor transmission equipment comprises: nozzle, pipeline, locator, pressure regulator and filter, nozzle are positioned at the zone near substrate surface, and filter is provided at before the pressure regulator.
26. device as claimed in claim 21, wherein said vapor transmission equipment moves by a driver.
27. device as claimed in claim 21, wherein said substrate holding apparatus is rotated motion by driver.
28. device as claimed in claim 21, wherein said steam generating equipment comprises: conduit, liquid inlet, liquid outlet, pressure relief valve, choke valve, heater, pressure and temp control loop, vector gas entrance, liquid outflow end and gas vent, conduit has liquid inlet and liquid outlet, catheter interior arranges heater, the pressure and temp control loop is connected to conduit, be provided with choke valve on the liquid outlet, the vector gas entrance is connected to the liquid outflow end, conduit also has gas vent, is provided with pressure relief valve on the gas vent.
29. device as claimed in claim 28, wherein said pressure relief valve are arranged between the 1-7 bar.
30. device as claimed in claim 28, wherein the temperature in the pressure and temp control loop is arranged on 35 ℃-170 ℃.
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| CN103590084B (en) * | 2012-08-16 | 2018-08-17 | 盛美半导体设备（上海）有限公司 | A kind of device and method quickly preparing nano-structure array |
| CN103021933A (en) * | 2012-09-18 | 2013-04-03 | 上海集成电路研发中心有限公司 | Method for preprocessing wafer groove before chemical electroplating process |
| CN105304521A (en) * | 2014-07-29 | 2016-02-03 | 盛美半导体设备（上海）有限公司 | Device and method for wetting substrate in advance in semiconductor technology |
| CN106567130A (en) * | 2015-10-10 | 2017-04-19 | 盛美半导体设备（上海）有限公司 | Method for improving roughness of wafers |
| CN113862746B (en) * | 2021-11-09 | 2023-02-17 | 新阳硅密（上海）半导体技术有限公司 | Pre-wetting system and method for electroplating process |
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| US5403621A (en) * | 1991-12-12 | 1995-04-04 | Hughes Aircraft Company | Coating process using dense phase gas |
| US6123984A (en) * | 1997-09-16 | 2000-09-26 | Ebara Corporation | Method and apparatus for plating a substrate |
| JP2007294879A (en) * | 2006-03-27 | 2007-11-08 | Tokyo Electron Ltd | Substrate treatment method, semiconductor device fabrication method, and substrate treatment unit |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5403621A (en) * | 1991-12-12 | 1995-04-04 | Hughes Aircraft Company | Coating process using dense phase gas |
| US6123984A (en) * | 1997-09-16 | 2000-09-26 | Ebara Corporation | Method and apparatus for plating a substrate |
| JP2007294879A (en) * | 2006-03-27 | 2007-11-08 | Tokyo Electron Ltd | Substrate treatment method, semiconductor device fabrication method, and substrate treatment unit |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Patentee after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201600, room 900, 210 steaming Road, Songjiang, Shanghai Patentee before: ACM (SHANGHAI) Inc. |