CN101459121B - Through hole and through hole forming method - Google Patents
Through hole and through hole forming method Download PDFInfo
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- CN101459121B CN101459121B CN2007100944959A CN200710094495A CN101459121B CN 101459121 B CN101459121 B CN 101459121B CN 2007100944959 A CN2007100944959 A CN 2007100944959A CN 200710094495 A CN200710094495 A CN 200710094495A CN 101459121 B CN101459121 B CN 101459121B
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Abstract
A method of forming through holes comprises steps of forming a dielectric layer on a semiconductor substrate, patterning the dielectric layer to form a contact hole, forming a binding metal layer and a first alloy layer which cover the contact hole, arranging a second alloy layer on the first alloy layer, wherein carbon content and oxygen content in the second alloy layer is higher than that of the first alloy layer, further, forming a connection metal layer which covers the second alloy layer and fills the contact hole, and finally forming a through hole. The invention can reduce possibility of forming orifices during the forming process of the through hole. The invention further provides a through hole, and when the through hole is formed, the possibility of generating orifices can be reduced.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of through hole and through hole formation method.
Background technology
Along with integrated circuit develops to the deep-submicron size, the dense degree of device and the complexity of technology constantly increase, and the strictness of technical process is controlled become even more important.Wherein, through hole because it has important function in device architecture is formed, makes that the formation technology of through hole is always paid attention to by those skilled in the art as the passage that is connected between multiple layer metal inter-level interconnects and device active region and the external circuitry.
Current, the step that forms through hole comprises: at first, as shown in Figure 1a, form dielectric layer 2 on the semiconductor-based end 1; Then, shown in Fig. 1 b, graphical described dielectric layer 2 is to form contact hole 3; Afterwards, shown in Fig. 1 c, order forms bonding metal layer 4 and the alloy-layer 5 that covers described contact hole 3; At last, shown in Fig. 1 d, form the connection metal level 6 that covers described alloy-layer 5 and fill described contact hole 3, to form through hole.
Yet actual production finds that with dwindling of device size, clear size of opening also dwindles thereupon, and when causing filling described contact hole by traditional handicraft, the filling capacity of described contact hole is restricted, and shown in Fig. 1 e, easily produces hole 7 in filling process.The generation that how to reduce hole 7 in the process that forms through hole becomes those skilled in the art's problem demanding prompt solution.
The patent No. is for providing a kind of fill method of slit in the Chinese patent application of " 02145835.9 ", at first, shown in Fig. 2 a, crystal seed 20 is formed on 12 bottoms, slit on presoma 10 surfaces; Then, shown in Fig. 2 b, feed reacting gas, make itself and crystal seed 20 reactions to form whisker 30 at crystal seed 20 and slit 12 bottom intersections; And then, shown in Fig. 2 c, in slit 12, form seamless filling monocrystal 40.But, the application of said method only limits at 12 no holes ground, the slit on presoma 10 surfaces filling monocrystal 40, and for the technology that forms through hole, if adopt said method to form imperforate through hole, then need to form earlier presoma, order forms crystal seed, whisker and monocrystal, complex process in the presoma slit again.
Summary of the invention
The invention provides a kind of through hole formation method, produce the possibility of hole in the through hole that can reduce to form, and technology is simple; The invention provides a kind of through hole, can reduce to produce the possibility of hole when forming described through hole.
A kind of through hole formation method provided by the invention comprises:
On the semiconductor-based end, form dielectric layer;
Graphical described dielectric layer is to form contact hole;
Form the bonding metal layer and first alloy-layer that cover described contact hole;
Form second alloy-layer on described first alloy-layer, carbon, the oxygen content in described second alloy-layer is higher than carbon, the oxygen content in described first alloy-layer;
Form the connection metal level that covers described second alloy-layer and fill described contact hole, form through hole.
Alternatively, the average thickness of described second alloy-layer is less than the average thickness of described first alloy-layer; Alternatively, described bonding metal layer is Ti or Ta; Alternatively, described first alloy-layer is TiN or TaN; Alternatively, described second alloy-layer is TiN or TaN; Alternatively, when described first alloy-layer and described second alloy-layer all comprised TiN or TaN, described first alloy-layer was the alloy-layer of inorganicization of experience operation; Alternatively, when carrying out described inorganicization operation, comprise inorganic oxidizing gases, described inorganic oxidizing gases comprises H
2And N
2Alternatively, described H
2Range of flow be 1500～2000sccm; Alternatively, described N
2Range of flow be 1500～2000sccm; Alternatively, when carrying out described inorganicization operation, the reaction power scope is 1500～2000W; Alternatively, described connection metal level is W or Cu.
A kind of through hole, be formed at and be positioned at the suprabasil dielectric layer of semiconductor, comprise, the bonding metal layer and first alloy-layer of contact hole, the described contact hole of covering, and cover described first alloy-layer and fill the connection metal level of described contact hole, between described first alloy-layer and connection metal level, also comprise second alloy-layer; The thickness that covers described second alloy-layer of described contact hole sidewall successively decreases downwards from the top; Carbon, oxygen content in described second alloy-layer is higher than carbon, the oxygen content in described first alloy-layer.
Alternatively, the average thickness of described second alloy-layer is less than the average thickness of described first alloy-layer; Alternatively, described bonding metal layer is Ti or Ta; Alternatively, described first alloy-layer is TiN or TaN; Alternatively, described second alloy-layer is TiN or TaN; Alternatively, when described first alloy-layer was identical with the described second alloy-layer material, described first alloy-layer experienced inorganicization operation; Alternatively, described connection metal level is W or Cu.
Compared with prior art, technique scheme has the following advantages:
The through hole formation method that technique scheme provides, by be higher than described second alloy-layer of described first alloy-layer in described first alloy-layer surface formation carbon, oxygen content, and then, utilize described second alloy-layer to adjust the deposition capability of the connection metal level of follow-up filling, promptly, connect metal level and be weaker than its deposition capability on described first alloy-layer at the deposition capability on described second alloy-layer, and described second alloy-layer is thick more, the ability of the metal level of deposition connection thereon is weak more; Owing to utilize the thickness of described second alloy-layer of the described contact hole sidewall of covering that traditional handicraft obtains to successively decrease downwards from the top, when causing follow-up filling to connect metal level, described connection metal level is weaker than the deposition capability on described second alloy-layer in other zones in contact hole at the deposition capability on described second alloy-layer that covers described contact hole sidewall top, make the deposition velocity of the connection metal level be positioned at described contact hole sidewall top be slower than the deposition velocity of the connection metal level that is positioned at other zones of described contact hole, can make that the imperforate through hole of formation becomes possibility after filling described connection metal level;
The through hole that technique scheme provides, by having second alloy-layer in described through hole, and carbon, oxygen content in described second alloy-layer are higher than carbon, oxygen content in described first alloy-layer; Make the deposition capability of described connection metal level on described second alloy-layer be weaker than its deposition capability at described first alloy-layer, that is, the introducing of described second alloy-layer makes that the ability of deposition connection metal level weakens on alloy-layer; And described second alloy-layer is thick more, and deposition capability is weak more; Again since the thickness of second alloy-layer that covers described contact hole sidewall top greater than the thickness that covers second alloy-layer in other zones in the described contact hole, make described connection metal level be weaker than deposition capability on second alloy-layer in other zones of contact hole at the deposition capability on second alloy-layer that is positioned at contact hole sidewall top, cause the deposition velocity of the connection metal level that is positioned at described contact hole sidewall top to be slower than the deposition velocity of the connection metal level that is positioned at other zones of described contact hole, can reduce the generation of described through hole inside aperture.
Description of drawings
Fig. 1 a～1d is for forming each step schematic diagram of through hole in the explanation prior art;
Fig. 1 e is for illustrating the structural representation of the through hole with hole defect that forms in the prior art;
Fig. 2 a～2c is for forming each step schematic diagram of the through hole of hole defect in the explanation prior art;
Fig. 3 a～3e is each step schematic diagram of the formation through hole of the explanation embodiment of the invention;
Fig. 4 is the structural representation of the through hole of the formation of the explanation embodiment of the invention.
Embodiment
Although below with reference to accompanying drawings the present invention is described in more detail, wherein represented the preferred embodiments of the present invention, be to be understood that those skilled in the art can revise the present invention described here and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensive instruction for those skilled in the art, and not as limitation of the present invention.
For clear, whole features of practical embodiments are not described.In the following description, be not described in detail known function and structure, because they can make the present invention because unnecessary details and confusion.Will be understood that in the exploitation of any practical embodiments, must make a large amount of implementation details, for example, change into another embodiment by an embodiment according to relevant system or relevant commercial restriction to realize developer's specific objective.In addition, will be understood that this development may be complicated and time-consuming, but only be routine work to those skilled in the art.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.Will be clearer according to following explanation and claims advantages and features of the invention.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
The concrete steps of using method formation through hole provided by the invention comprise:
Step 1: shown in Fig. 3 a, on the semiconductor-based end 100, form dielectric layer 120.
Semiconductor substrate (substrate) go up the definition device active region and finish shallow trench isolation from, then form grid structure and source region and drain region so that deposit first interlayer dielectric layer (be before-metal medium layer, PMD) after, form the semiconductor-based end 100.
In addition, Semiconductor substrate (substrate) go up the definition device active region and finish shallow trench isolation from, then form grid structure and source region and drain region so that deposit first interlayer dielectric layer after, continue to form the ground floor through hole, and fill described ground floor through hole, subsequently, form the first metal layer; Then, deposit second interlayer dielectric layer after, still can form the semiconductor-based end 100; Perhaps, behind deposition first interlayer dielectric layer, continue to form ground floor through hole and groove, and fill described ground floor through hole and groove, then, deposit second interlayer dielectric layer after, still can form the semiconductor-based end 100.
Can expand ground, behind deposition N-1 interlayer dielectric layer, continue to form N-1 layer through hole, and fill described N-1 layer through hole, subsequently, form the N-1 metal level after, continue deposition N interlayer dielectric layer after, form the semiconductor-based end 100; Perhaps, behind deposition N-1 interlayer dielectric layer, continue to form N-1 layer through hole and groove, and fill described N-1 layer through hole and groove, then, deposit the N interlayer dielectric layer after, still can form the semiconductor-based end 100.
Obviously, the number N of described interlayer dielectric layer can be any natural number, and as 1,3,5,7 or 9 etc., the concrete number of described interlayer dielectric layer is determined according to product requirement.
Described before-metal medium layer covers described grid structure and source region and drain region and fills up the linear slit that is positioned between described grid structure; Described grid structure comprises the side wall and the gate oxide of grid, all around gate.Described grid structure also can comprise the barrier layer that covers described grid and side wall.
Described Semiconductor substrate comprises but is not limited to comprise the silicon materials of semiconductor element, and for example the silicon of monocrystalline, polycrystalline or non crystalline structure or SiGe (SiGe) also can be silicon-on-insulators (SOI).
Can adopt PECVD (plasma enhanced CVD), SACVD (inferior normal pressure chemical vapor deposition) or LPCVD technologies such as (low-pressure chemical vapor phase depositions) to form described dielectric layer 120.Described dielectric layer 120 materials are including but not limited to unadulterated silicon dioxide (SiO
2), phosphorosilicate glass (phosphosilicate glass, PSG), Pyrex (borosilicate, BSG), boron-phosphorosilicate glass (borophosphosilicate, BPSG), fluorine silex glass (FSG) or have a kind of or its combination in the advanced low-k materials.Described have advanced low-k materials include but not limited to black diamond (Black Diamond, BD) or coral etc.
Step 2: shown in Fig. 3 b, graphical described dielectric layer 120 is to form contact hole 122.
Can adopt plasma etching industrial to carry out described graphical operation.The step of graphical described dielectric layer 120 can comprise: carry out main etching operation, with the described dielectric layer 120 of reserve part in the graphics field that forms; Carry out over-etching operation, with the described semiconductor-based end 100 of expose portion.
Step 3: shown in Fig. 3 c, form the bonding metal layer 140 and first alloy-layer 160 that cover described contact hole 122.
Described bonding metal layer 140 and first alloy-layer 160 are in order to strengthen the adhesive property that is connected metal interlevel of described contact hole 122 and the described contact hole 122 of follow-up filling, to reduce contact resistance.
Described bonding metal layer 140 can comprise Ti or Ta; Described first alloy-layer 160 can comprise TiN or TaN.Can adopt PVD (physical vapour deposition (PVD)) or MOCVD (metallochemistry vapour deposition) technology to form described bonding metal layer 140 and alloy-layer 160.
Step 4: shown in Fig. 3 d, form second alloy-layer 162 on described first alloy-layer 160, carbon, the oxygen content in described second alloy-layer 162 is higher than carbon, the oxygen content in described first alloy-layer 160.
Described second alloy-layer 162 can comprise TiN or TaN.Can adopt PVD (physical vapour deposition (PVD)) or MOCVD (metallochemistry vapour deposition) technology to form described second alloy-layer 162.
To comprise TiN in the described alloy-layer is example, because common employing thermal decomposition TDMAT (Ti[N (CH3) 2] 4, four dimethyl amine titaniums) mode forms described first alloy-layer 160 and second alloy-layer 162, causes in the alloy-layer of formation to comprise a large amount of carbon, oxygen impurities; Usually adopt inorganicization operation to remove carbon and the oxygen that comprises in the described alloy-layer.Reaction temperature during thermal decomposition TDMAT is 350～450 degrees centigrade, as 400 degrees centigrade.
Described inorganicization is operating as utilizes H
2And N
2Described alloy-layer is carried out plasma treatment; TDMAT generates Ti (C) N, (CH3) through chemical reaction
2NH and hydrocarbon, wherein Ti (C) N and (CH3)
2NH can be deposited on the subsurface material surface, and hydrocarbon can be detached reaction chamber.When carrying out described inorganicization operation, hydrogen and nitrogen (H
2﹠amp; N
2) can enter reaction chamber; Reaction power is made as 1500～2000W, as 1750W.With this understanding, H
2Ion turns to H
2 +, N
2Ion turns to N
2 +, H
2 +With deposited film generation chemical reaction carbon (C) and nitrogen (N) are reflected from deposited film, and N
2 +Then the N in the film
2Replace out and finally form titanium nitride (TiN) with N.The auxiliary product C that generates in this step
xH
y+ HNR
2Can be pumped away.
When carrying out described inorganicization operation, H
2Range of flow be 1500～2000sccm, as 1800sccm; N
2Range of flow be 1500～2000sccm, as 1800sccm.
After carrying out described inorganicization operation, can reduce the resistance of described first alloy-layer 160 and increase the density of described first alloy-layer 160.In the traditional handicraft, after forming described first alloy-layer 160, promptly form the connection metal level to fill the operation of described contact hole.
But actual production finds that with dwindling of device size, the filling capacity of described contact hole is restricted, and easily produces hole in filling process.
The present inventor thinks that the generation reason of described hole is after analyzing: the deposition rate of the connection metal level of filling on the sidewall top of described contact hole is higher than described connection metal level in inner other the regional deposition rates of contact hole; Thus, adjust described connection metal level sidewall top and inner other regional deposition rates at described contact hole, so that the deposition rate of connection metal level on the sidewall top of described contact hole of filling is lower than described connection metal level in inner other the regional deposition rates of contact hole, becomes and reduce the direction that hole produces.
When described first alloy-layer 160 is identical with second alloy-layer, 162 materials, can carry out inorganicization operation to described first alloy-layer 160, and described second alloy-layer 162 is not carried out inorganicization operation, so that carbon, oxygen content in described second alloy-layer are higher than carbon, oxygen content in described first alloy-layer.
Think after the present inventor's undergoing analysis and the practice, connect metal level and be weaker than its deposition capability on the first low alloy-layer 160 of carbon, oxygen content at the deposition capability on the second high alloy-layer 162 of carbon, oxygen content, and described second alloy-layer 162 is thick more, and the ability of the metal level of deposition connection thereon is weak more; When adopting existing depositing operation, because in the arbitrary period that forms second alloy-layer 162 that covers described contact hole, the thickness that is positioned at second alloy-layer 162 on described contact hole sidewall top all is higher than the thickness of second alloy-layer 162 that is positioned at inner other zones of described contact hole; Take all factors into consideration, owing to be positioned at the thickness that the thickness of described second alloy-layer 162 on described contact hole sidewall top is higher than described second alloy-layer 162 that is positioned at inner other zones of described contact hole, when causing follow-up filling to connect metal level, described connection metal level is weaker than deposition capability on described second alloy-layer 162 in inner other zones of contact hole being positioned at deposition capability on described second alloy-layer 162 on contact hole sidewall top, cause the deposition velocity of the connection metal level that is positioned at described contact hole sidewall top to be slower than to be positioned at the deposition velocity of the connection metal level in inner other zones of described contact hole, be beneficial to and after filling described connection metal level, form imperforate through hole.
In the practice, the average thickness of described second alloy-layer 162 can be lower than the average thickness of described first alloy-layer 160, to reduce the contact resistance of device; In the practical operation, to comprise TiN in described second alloy-layer 162 that forms is example, adopt the MOCVD process heat to decompose TDMAT and can only continue 1～3 second with the operation that forms described second alloy-layer 162, the average thickness of described second alloy-layer 162 of formation can be 10 dusts; And when comprising TiN in described first alloy-layer 160, adopting the MOCVD process heat to decompose TDMAT sustainable 10 seconds with the operation that forms described first alloy-layer 160, the average thickness of described first alloy-layer 160 of formation can be 50 dusts.
Step 5: shown in Fig. 3 e, form the connection metal level 180 that covers described second alloy-layer 162 and fill described contact hole 122, to form through hole.
Described connection metal level 180 is W or Cu.Can adopt PVD (physical vapour deposition (PVD)) or MOCVD (metallochemistry vapour deposition) technology to form described connection metal level 180.
Based on identical design, as shown in Figure 4, the present invention also provides a kind of through hole, be formed at the dielectric layer 220 that is positioned at at semiconductor-based the end 200, comprise, contact hole 222, cover the bonding metal layer 240 and first alloy-layer 260 of described contact hole 222, and cover described first alloy-layer 260 and fill the connection metal level 300 of described contact hole 222, between described first alloy-layer 260 and connection metal level 300, also comprise second alloy-layer 280; The thickness that covers described second alloy-layer 280 of described contact hole 222 sidewalls successively decreases downwards from the top; Carbon, oxygen content in described first alloy-layer 260 is lower than carbon, the oxygen content in described second alloy-layer 280.
The average thickness of described second alloy-layer 280 is less than the average thickness of described first alloy-layer 260; Described bonding metal layer 240 is Ti or Ta; Described first alloy-layer 260 and second alloy-layer 280 are TiN or TaN; Described connection metal level 300 is W or Cu.
By having second alloy-layer in described through hole, and carbon, oxygen content in described second alloy-layer are higher than carbon, oxygen content in described first alloy-layer; Make the deposition capability of described connection metal level on described second alloy-layer be weaker than its deposition capability at described first alloy-layer, that is, the introducing of described second alloy-layer makes that the ability of deposition connection metal level weakens on alloy-layer; And described second alloy-layer is thick more, and deposition capability is weak more; Again since the thickness of second alloy-layer that covers described contact hole sidewall top greater than the thickness that covers second alloy-layer in other zones in the described contact hole, make described connection metal level be weaker than deposition capability on second alloy-layer in other zones of contact hole at the deposition capability on second alloy-layer that is positioned at contact hole sidewall top, cause the deposition velocity of the connection metal level that is positioned at described contact hole sidewall top to be slower than the deposition velocity of the connection metal level that is positioned at other zones of described contact hole, can reduce the generation of described through hole inside aperture.
What need emphasize is that not elsewhere specified step all can use conventional methods acquisition, and concrete technological parameter is determined according to product requirement and process conditions.
Although the present invention has been described and has enough described embodiment in detail although describe by the embodiment at this, the applicant does not wish by any way the scope of claims is limited on this details.Other to those skilled in the art advantage and improvement are conspicuous.Therefore, relative broad range the invention is not restricted to represent and the specific detail of describing, equipment and the method and the illustrative example of expression.Therefore, can depart from these details and do not break away from the spirit and scope of the total inventive concept of applicant.
Claims (18)
1. a through hole formation method is characterized in that, comprising:
On the semiconductor-based end, form dielectric layer;
Graphical described dielectric layer is to form contact hole;
Form the bonding metal layer and first alloy-layer that cover described contact hole;
On described first alloy-layer, form second alloy-layer,
Form the connection metal level that covers described second alloy-layer and fill described contact hole, form through hole; Wherein, carbon, the oxygen content in described second alloy-layer is higher than carbon, the oxygen content in described first alloy-layer, is weaker than its deposition capability at described first alloy-layer so that connect the deposition capability of metal level on described second alloy-layer; The thickness of second alloy-layer that covers described contact hole sidewall top is greater than the thickness that covers second alloy-layer in other zones in the described contact hole.
2. through hole formation method according to claim 1 is characterized in that: the average thickness of described second alloy-layer is less than the average thickness of described first alloy-layer.
3. through hole formation method according to claim 1 is characterized in that: described bonding metal layer is Ti or Ta.
4. through hole formation method according to claim 1 is characterized in that: described first alloy-layer is TiN or TaN.
5. through hole formation method according to claim 1 is characterized in that: described second alloy-layer is TiN or TaN.
6. through hole formation method according to claim 1 is characterized in that: when described first alloy-layer and described second alloy-layer all comprised TiN or TaN, described first alloy-layer was the alloy-layer of inorganicization of experience operation.
7. through hole formation method according to claim 6 is characterized in that: when carrying out described inorganicization operation, comprise inorganic oxidizing gases, described inorganic oxidizing gases comprises H
2And N
2
8. through hole formation method according to claim 7 is characterized in that: described H
2Range of flow be 1500～2000sccm.
9. through hole formation method according to claim 7 is characterized in that: described N
2Range of flow be 1500～2000sccm.
10. through hole formation method according to claim 6 is characterized in that: when carrying out described inorganicization operation, the reaction power scope is 1500～2000W.
11. through hole formation method according to claim 1 is characterized in that: described connection metal level is W or Cu.
12. through hole, be formed at and be positioned at the suprabasil dielectric layer of semiconductor, comprise, the bonding metal layer and first alloy-layer of contact hole, the described contact hole of covering, and cover described first alloy-layer and fill the connection metal level of described contact hole, it is characterized in that: between described first alloy-layer and connection metal level, also comprise second alloy-layer; The thickness that covers described second alloy-layer of described contact hole sidewall successively decreases downwards from the top; Carbon, oxygen content in described second alloy-layer is higher than carbon, the oxygen content in described first alloy-layer, is weaker than its deposition capability at described first alloy-layer so that connect the deposition capability of metal level on described second alloy-layer.
13. through hole according to claim 12 is characterized in that: the average thickness of described second alloy-layer is less than the average thickness of described first alloy-layer.
14. through hole according to claim 12 is characterized in that: described bonding metal layer is Ti or Ta.
15. through hole according to claim 12 is characterized in that: described first alloy-layer is TiN or TaN.
16. through hole according to claim 12 is characterized in that: described second alloy-layer is TiN or TaN.
17. through hole according to claim 12 is characterized in that: when described first alloy-layer and described second alloy-layer all comprised TiN or TaN, described first alloy-layer experienced inorganicization operation.
18. through hole according to claim 12 is characterized in that: described connection metal level is W or Cu.
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| CN2007100944959A CN101459121B (en) | 2007-12-13 | 2007-12-13 | Through hole and through hole forming method |
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|---|---|---|---|
| CN2007100944959A CN101459121B (en) | 2007-12-13 | 2007-12-13 | Through hole and through hole forming method |
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| CN101459121B true CN101459121B (en) | 2010-06-09 |
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| CN101937864B (en) * | 2009-07-03 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | Filling method of contact hole |
| US8531035B2 (en) * | 2011-07-01 | 2013-09-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect barrier structure and method |
| CN104299940A (en) * | 2013-07-19 | 2015-01-21 | 上海华虹宏力半导体制造有限公司 | Film forming method for metal blocking layer |
| CN111834234B (en) * | 2020-07-28 | 2022-09-23 | 华进半导体封装先导技术研发中心有限公司 | Through hole filling method and structure |
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| US6045666A (en) * | 1995-08-07 | 2000-04-04 | Applied Materials, Inc. | Aluminum hole filling method using ionized metal adhesion layer |
| CN1151610A (en) * | 1995-11-01 | 1997-06-11 | 现代电子产业株式会社 | Method for forming metal wire |
| US6130161A (en) * | 1997-05-30 | 2000-10-10 | International Business Machines Corporation | Method of forming copper interconnections with enhanced electromigration resistance and reduced defect sensitivity |
| US6274487B1 (en) * | 1998-06-30 | 2001-08-14 | Sharp Kabushiki Kaisha | Method for manufacturing semiconductor device |
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| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111123 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |