CN101493493B - Presintering apparatus for semiconductor element and presintering method thereof - Google Patents

Presintering apparatus for semiconductor element and presintering method thereof Download PDF

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CN101493493B
CN101493493B CN 200810003872 CN200810003872A CN101493493B CN 101493493 B CN101493493 B CN 101493493B CN 200810003872 CN200810003872 CN 200810003872 CN 200810003872 A CN200810003872 A CN 200810003872A CN 101493493 B CN101493493 B CN 101493493B
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burning
cabin
burn
semiconductor element
board
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CN101493493A (en
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李明宪
谢荣修
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King Yuan Electronics Co Ltd
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King Yuan Electronics Co Ltd
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Abstract

The invention provides a device and a method for presintering a semiconductor element, mainly comprising a main presintering cabin, at least one buffer presintering cabin and a control device; the main presintering cabin can be internally provided with at least one slot substrate which is provided with a plurality of slots; all slots can be inserted with a presintering plate which is provided with a plurality of testing sockets; all testing sockets can hold a semiconductor element; one side of the buffer presintering cabin, connected with the main presintering cabin, is provided with a gate which can be communicated with the main presintering cabin; and the control device can respectively control the temperature of the main presintering cabin and the buffer presintering cabin and the voltages of all slots in the main presintering cabin.

Description

The pre-burning device of semiconductor element and pre-firing method thereof
Technical field
The invention relates to a kind of pre-burning device and pre-firing method of semiconductor element, particularly relevant for a kind of pre-burning device and pre-firing method thereof with many cabins.
Background technology
In recent years, semiconductor element has become the important source of finance of TaiWan, China, and along with development of technology, people are also just more and more harsh to the requirement of semiconductor element fiduciary level.At present, the index of industry through being commonly used to assess the semiconductor element production reliability is failure rate (fail rate).Because the fiduciary level of semiconductor element product is meant the survival rate (with respect to failure rate) of semiconductor product after operation a period of time, survival rate higher (being that failure rate is lower) just represent the semiconductor element product fiduciary level better, in general, the semiconductor element product can have higher failure rate at the use initial stage, but increase along with the time, failure rate can descend, and this stage is called early die young the phase (infancy period) again.So die young the morning of semiconductor element product the phase just become the assessment product whether close the same important indicator that requires in quality specification; and be used as the foundation of removing defective products; in general be the fault that design or defective workmanship etc. cause in the phase common faults mechanism of early dying young; usually can when the semiconductor element test process, use the mode of pre-burning (Burn-In) that die young morning eliminated phase; and so-called pre-burning is meant semiconductor element is inserted on the special resistant to elevated temperatures burn-in board (Burn-in Board); and adding semiconductor element condition of work; for example voltage and electric current; insert again in the hot environment, make its accelerated deterioration.
At present pre-burning technology can be divided into three steps, 1, heat up and waiting temperature stable; 2, carry out pre-burning; 3, wait for that cooling finishes pre-burning; The shortcoming of this practice is to carry out in the pre-burning process with single pre-burning cabin, intensification and temperature-fall period are very consuming time, and pre-burning mode with present single pre-burning cabin, all be to carry out pre-burning with the lot semiconductor element, when the part semiconductor element has reached pre-burning and has finished condition, need all semiconductor element pre-burnings of wait to finish and to take out cooling, and in semiconductor element pre-burning process, even if the slot of other burn-in board of not pegging graft is arranged in the pre-burning cabin, also can't add other semiconductor element and carry out burn-in testing, the pre-burning work of a collection of semiconductor element only can once be carried out in single pre-burning like this cabin, and the time effects production capacity that the output capacity that not only reduces single pre-burning cabin more expends many waits is hard iron very.
Formerly the technology U.S. Patent number 7,111,211, disclosed the pre-burning device of a kind of pair of pre-burning cabin formula, it is characterized in that this pair pre-burning cabin formula pre-burning device be by well heater with air heat, and by transfer tube with hot air circulate between cabin, two pre-burning cabins promoting the temperature in two pre-burning cabins, but still can't effectively solve in the pre-burning process, heat up and lower the temperature consuming time and pre-burning cabin output capacity is not good and then influence the problem of production capacity, so how to address the above problem be the instant problem of industry.
Summary of the invention
Therefore, fundamental purpose of the present invention provides a kind of semiconductor element pre-burning device with many cabin structures, can effectively solve in the process of semiconductor element pre-burning, can't add the problem that other semiconductor element carries out pre-burning.
Another object of the present invention, provide a kind of semiconductor element pre-burning device with many cabin structures, can effectively solve in the semiconductor element pre-burning process, when the part semiconductor element has reached the pre-burning condition, need all semiconductor element pre-burnings of wait to finish the problem that to lower the temperature and take out.
A further object of the present invention provides a kind of semiconductor element pre-burning device with many cabin structures, can effectively solve in the semiconductor element pre-burning process, heats up and lowers the temperature problem consuming time.
A further object of the present invention provides a kind of pre-firing method of semiconductor element with many cabin structures, can effectively solve in the semiconductor element pre-burning process, can't add the problem that other semiconductor element carries out pre-burning.
A further object of the present invention, provide a kind of pre-firing method of semiconductor element with many cabin structures, can effectively solve in the semiconductor element pre-burning process, when the part semiconductor element has reached the pre-burning condition, need all semiconductor element pre-burnings of wait to finish the problem that to lower the temperature and take out.
A further object of the present invention provides a kind of pre-firing method of semiconductor element with many cabin structures, can effectively solve in the semiconductor element pre-burning process, heats up and lowers the temperature problem consuming time.
A kind of semiconductor element pre-burning device with many cabin structures is characterized in that, comprising:
One main pre-burning cabin disposes at least one burn-in board in this main pre-burning cabin, and this burn-in board is provided with a plurality of test jacks, and each test jack can ccontaining semiconductor element;
One buffering pre-burning cabin, this buffering pre-burning cabin disposes one first gate and one second gate, wherein can communicate with this main pre-burning cabin by this first gate;
One shifting apparatus, but these a plurality of burn-in board of this shifting apparatus transfer and be displaced into this first gate and this second gate between; And,
One control device, this control device can be controlled test and this shifting apparatus in this main pre-burning cabin and this buffering pre-burning cabin respectively.
Wherein should cushion the volume in pre-burning cabin less than this main pre-burning cabin.
Wherein this control device is to electrically connect this slot substrate, and can by each burn-in board and on a plurality of test jacks, each semiconductor element is carried out testing electrical property, and calculates its failure rate.
The invention provides a kind of pre-firing method of semiconductor element, it is characterized in that, comprise at least with many cabin structures:
An one main pre-burning cabin and a buffering pre-burning cabin are provided, are provided with at least one slot substrate in this main pre-burning cabin, each slot substrate is provided with a plurality of slots;
At least one burn-in board is provided, and this burn-in board is provided with a plurality of test jacks, is equipped with semiconductor element in each test jack;
This burn-in board of transfer is to cushioning in the pre-burning cabin;
Carrying out a preheating program, is to be heated in this buffering pre-burning cabin and make the temperature of each semiconductor element on this burn-in board can reach the temperature of pre-burning;
This burn-in board of transfer moves into this main pre-burning cabin with each burn-in board in this buffering pre-burning cabin;
Carrying out testing electrical property, is to provide the testing electrical property signal that each semiconductor element is carried out testing electrical property by control device;
Calculate failure rate, this control device receives by the test signal that each semiconductor element returned, and calculates the failure rate of this each semiconductor element thus; And
Judging whether to finish test, is to judge by this control device whether these a plurality of burn-in board finish burn-in testing.
Wherein this control device judges whether that the mode that finishes burn-in testing comprises a failure rate growth curve and the failure rate experience comparison line of comparing this each semiconductor element.
The invention provides a kind of pre-firing method of semiconductor element with many cabin structures, is after a control device judges that some burn-in board has finished burn-in testing, and this control device continues the flow process of execution, it is characterized in that this flow process comprises:
This has finished the burn-in board of burn-in testing transfer, is among burn-in board should be moved to buffering pre-burning cabin from main pre-burning cabin;
Carry out the temperature adjustment, the temperature in the buffering pre-burning cabin is lowered the temperature;
Shifting out the burn-in board that this has finished burn-in testing, is that this burn-in board is transferred to outside the buffering pre-burning cabin;
One burn-in board to be measured is provided, and sends among the buffering pre-burning cabin;
Adjust the temperature in the buffering pre-burning cabin, so that the temperature in the buffering pre-burning cabin can reach the temperature of pre-burning;
This burn-in board to be measured of transfer is to main pre-burning cabin;
Carry out testing electrical property, the testing electrical property signal is provided, each semiconductor element is carried out testing electrical property;
Calculate failure rate, receive by the test signal that each semiconductor element returned, calculate the failure rate of this each semiconductor element thus by this control device; And
Judging whether to finish test, is to judge by this control device whether these a plurality of burn-in board finish burn-in testing.
Wherein this control device judges whether that the mode that finishes burn-in testing comprises a failure rate growth curve and the failure rate experience comparison line of comparing this each semiconductor element.
The invention provides a kind of semiconductor element pre-burning device, it is characterized in that, comprising with many cabin structures:
One main pre-burning cabin disposes at least one burn-in board in this main pre-burning cabin, and this burn-in board is provided with a plurality of test jacks, and each test jack can ccontaining semiconductor element;
One heats up cushions the pre-burning cabin, and this intensification buffering pre-burning cabin disposes one first gate and one second gate, wherein can communicate with this main pre-burning cabin by one first gate;
One cooling buffering pre-burning cabin, this cooling buffering pre-burning cabin disposes this first gate and one the 3rd gate, wherein can communicate with this main pre-burning cabin by this first gate;
At least one shifting apparatus, but these a plurality of burn-in board of this shifting apparatus transfer and being displaced between this first gate, this second gate and the 3rd gate; And,
One control device, this control device can be controlled this main pre-burning cabin respectively and respectively cushion test and this shifting apparatus in pre-burning cabin.
Wherein this control device is the open and close between this first gate of may command, this second gate and the 3rd gate.
Wherein this volume that respectively cushions the pre-burning cabin is less than this main pre-burning cabin.
Description of drawings
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment more cited below particularly, and conjunction with figs. are described in detail below, wherein:
Fig. 1 is the synoptic diagram with semiconductor element pre-burning device of many cabin structures of the present invention.
Fig. 2 is the synoptic diagram of burn-in board.
Fig. 3 is the pre-burning schematic flow sheet that has the semiconductor element of many cabin structures for of the present invention.
Fig. 4 is semiconductor element failure rate growth curve.
Fig. 5 is failure rate experience comparison line.
Fig. 6 is the pre-burning schematic flow sheet of another specific embodiment of the present invention.
Wherein:
10-pre-burning device 102-master pre-burning cabin 104-buffering pre-burning cabin
106-control device 110-gate 120-gate
20-burn-in board 202-test jack 204-connecting interface
The 206-semiconductor element
Embodiment
Because the present invention is pre-burning device and the pre-firing method that discloses a kind of semiconductor element, wherein structure of being utilized and ultimate principle know usually that for correlative technology field has the knowledgeable can understand, so with hereinafter explanation, no longer do complete description.Simultaneously, with the accompanying drawing that is hereinafter contrasted, be to express the structural representation relevant with feature of the present invention, also do not need need chat bright in advance according to the complete drafting of physical size.
At first, please refer to Fig. 1, is the synoptic diagram with semiconductor element pre-burning device of many cabin structures of the present invention.As shown in fig. 1, semiconductor element pre-burning device of the present invention comprises a main pre-burning cabin 102, a buffering pre-burning cabin 104, a control device 106 and at least one shifting apparatus (not illustrating); Wherein, the volume in buffering pre-burning cabin 104 is less than the volume in main pre-burning cabin 102, and is long-pending less because of cushioning the pre-burning volume of compartment, so can save the stand-by period in intensification and the temperature-fall period.In addition, be provided with a slot substrate (not illustrating) in the main pre-burning cabin 102, for example the backboard among the US711211 (backplane); The slot substrate is provided with a plurality of slots (not illustrating), the socket among the US711211 (motherboard socket) for example, and each slot can be pegged graft with burn-in board 20 then.In addition, in the present embodiment except configuration one gate 110 between main pre-burning cabin 102 and buffering pre-burning cabin 104, and on a side in buffering pre-burning cabin 104, also dispose another gate 120.In the process of carrying out pre-burning, control device 106 can be controlled main pre-burning cabin 102 and the temperature that cushions pre-burning cabin 104 respectively, and the curtage of each slot in may command master's pre-burning cabin 102, also can be with timed unit 106 according to the test status of each burn-in board 20, come the open and close of control gate 110 and gate 120, then, by a shifting apparatus, for example: mechanical arm, the burn-in board 20 that test is finished cushions pre-burning cabin 104 in moving to from main pre-burning cabin 102, after a temperature-fall period, shift out buffering pre-burning cabin 104 by gate 120 more at last.Certainly, control device 106 also can be after shifting out a burn-in board 20 in buffering pre-burning cabin 104, using the shifting apparatus burn-in board that another is to be tested 20 again send earlier in the buffering pre-burning cabin 104, and after being preheated to a temperature that is provided with, sending into main pre-burning cabin 102 and burn-in board 20 and slot on the slot substrate are electrically connected via gate 110.To emphasize that at this shifting apparatus is configurable in the outside in pre-burning cabin 104 or the inside in pre-burning cabin 104, of the present inventionly do not limited.
Then please refer to Fig. 2, it is the synoptic diagram of burn-in board 20.Burn-in board 20 is provided with a plurality of test jacks 202 and connecting interface 204, for example: golden finger; Can ccontaining semiconductor element 206 in each test jack 202.Connecting interface 204 can be pegged graft with the slot on the slot substrate in the main pre-burning cabin 102.Therefore, in the process that burn-in testing is carried out, control device 106 can be by the test signal of 204 transmitted test signals of the connecting interface on the burn-in board 20 and reception semiconductor element 206, therefore can calculate the failure rate of the semiconductor element 206 on each burn-in board 20, whether finish burn-in testing to judge certain some burn-in board 20.
Then, please also refer to Fig. 1 and Fig. 3, wherein Fig. 3 is the semiconductor element pre-burning schematic flow sheet that has many cabin structures for of the present invention.At first, shown in step 301 among Fig. 3, provide a main pre-burning cabin and a buffering pre-burning cabin; Then, shown in step 302, provide at least one burn-in board 20, burn-in board 20 is provided with a plurality of test jacks 202, can ccontaining semiconductor element 206 in the test jack 202; Follow, execution in step 303 is carried out the detecting of temperature again, is the temperature that detects main pre-burning cabin 102 and buffering pre-burning cabin 104 by control device 106 respectively; Then, execution in step 304, carry out a preheating program, be after treating that shifting apparatus is inserted buffering pre-burning cabin 104 with a burn-in board 20 to be measured, carry out a preheating program, when being heated to the temperature in the buffering pre-burning cabin 104 near the temperature identical, and make the temperature of each semiconductor element 206 on the burn-in board 20 can reach preheat temperature with main pre-burning cabin 102; Then, execution in step 305, shifting apparatus transfers load to main pre-burning cabin 102 with burn-in board 20 and is electrically connected on the slot of slot substrate; Then, execution in step 306 is carried out testing electrical property, by control device 106 the testing electrical property signal is sent on the burn-in board 20 through the slot substrate, again by burn-in board 20 and on a plurality of test jacks 202, each semiconductor element 206 is carried out testing electrical property; Execution in step 307 is calculated failure rate, when control device 106 receives by the test signal that each semiconductor element returned, calculates the failure rate of these semiconductor elements by this, and can obtain a failure rate growth curve (please refer to Fig. 4); Then, judge whether to finish test, it is (to please refer to Fig. 5 according to failure rate experience comparison line, it is according to the failure rate of the resultant semiconductor element of semiconductor element characteristic and the ideal relationship curve of time), shown in step 308, and cooperate following judgement formula to judge whether to finish the burn-in testing flow process of burn-in board 20: the unit interval internal fault rate difference Gt that calculates failure rate experience comparison line earlier:
Gt=Fx-Fx-1
Then, calculate the difference GAn of each 206 unit interval of semiconductor element internal fault rate FAn:
GAn=FAn-FAn-1
Follow again, judge whether to finish burn-in testing: for working as the difference of continuous K time 206 unit interval of semiconductor element internal fault rate, less than the unit interval internal fault rate difference of failure rate experience comparison line, promptly judge to meet the burn-in testing flow process that finishes burn-in board 20, for example: when
(GAn<Gt)and(GAn-1<Gt)and……and(GAn-(k-1)<Gt)
If the continuous difference of K time 206 unit interval of semiconductor element internal fault rate, less than the unit interval internal fault rate difference of failure rate experience comparison line, then execution in step 307 again behind certain hour is followed execution in step 308 again.
In addition, please refer to Fig. 6, be the pre-burning method flow synoptic diagram of another specific embodiment of the present invention.At first, before carrying out the pre-burning program, a plurality of burn-in board 20 have been positioned in the slot substrate in the main pre-burning cabin 102, then gate 110 is closed, and control heating arrangement by control device 106 temperature in the pre-burning cabin 102 is increased to a high temperature of setting, then, control device 106 can provide electrical signals (for example voltage and electric current) that the semiconductor element 206 on each burn-in board 20 is tested, and calculate the test status of the semiconductor element 206 on each burn-in board 20, after some burn-in board 20 has been judged as the end burn-in testing, then, control device 106 can be used among burn-in board 20 that shifting apparatus will finish burn-in testing moves to buffering pre-burning cabin from main pre-burning cabin, shown in step 601; Then, the temperature adjustment is carried out in 106 pairs of control device buffering pre-burning cabin 104, for example will cushion that temperature in the pre-burning cabin 104 is adjusted to the temperature that can touch near room temperature or human body or less than 50 ℃ etc., shown in step 602; After treating that semiconductor element 206 on the burn-in board 20 is all lowered the temperature, use shifting apparatus by control device 106 again burn-in board 20 is transferred to outside the buffering pre-burning cabin 104, shown in step 603; Then, control device 106 has can use shifting apparatus again and obtain a burn-in board 20 to be measured, and sends among the buffering pre-burning cabin 104, shown in step 604; Follow again, adjust the temperature in the buffering pre-burning cabin 104, so that the temperature in the buffering pre-burning cabin 104 can reach the temperature of pre-burning, shown in step 605; Then, using shifting apparatus by control device 106 is transferred to burn-in board 20 to be measured in the main pre-burning cabin 102, shown in step 606; Follow, carry out testing electrical property immediately, control device 106 is to be electrically connected to the slot substrate, and can by each burn-in board 20 and on a plurality of test jacks 202, each semiconductor element 206 is carried out testing electrical property, shown in step 607; Then, continue to calculate the failure rate of each semiconductor element 206, shown in step 608 by control device 106; And judged whether that by control device 106 burn-in board 20 has reached the end burn-in testing, shown in step 609; Then shown in the repeating step 601-608; Because it is identical that process and previous embodiment are described, and do not given unnecessary details at this.
To emphasize at last, main pre-burning of the present invention cabin 102 is moved and is cushioned between the pre-burning cabin 104 and can separate, therebetween can be by a bindiny mechanism (not being shown among the figure) with both airtight joints, it is convenient before first pre-burning begins to its objective is, can apace a plurality of burn-in board 20 be positioned in the slot substrate in the main pre-burning cabin 102.
In addition, according to the above-mentioned exposure of the present invention, clearly, can select to use a plurality of buffering pre-burnings cabin 104 and a main pre-burning cabin 102 to fit together; A plurality of burn-in board 20 in main pre-burning cabin 102 are in a period of time, for example in the process of 104 intensifications of buffering pre-burning cabin or cooling, there is other burn-in board 20 to reach when finishing burn-in testing, can cushions pre-burning cabin 104 by another and carry out burn-in board 20 transfers; And in one embodiment, for example first buffering pre-burning cabin 104 is made as the intensification cabin, another buffering pre-burning cabin 104 then is set at the cooling cabin, when having burn-in board 20 to reach in the main pre-burning cabin 102 to finish burn-in testing, then use shifting apparatus and burn-in board 20 is transferred in the buffering pre-burning cabin 104 of cooling and lowers the temperature by control device 106; Simultaneously, control device 106 is also used shifting apparatus and one burn-in board 20 to be measured is sent in the buffering pre-burning cabin 104 of intensification, after the wait preheating is finished, burn-in board to be measured 20 is sent into main pre-burning cabin 102 again and is carried out burn-in testings; Clearly, when preheating test is during with a kind of semiconductor element 206 (for example DRAM), the semiconductor element pre-burning device with many cabin structures of the present invention can provide test in non-stop-machine 24 hours, can improve the output capacity (throughput) of test effectively.Present embodiment except increasing by a buffering pre-burning cabin 104, other structure and test process all as hereinbefore, so it no longer is described in detail in detail.
The above only is preferred embodiment of the present invention, is not in order to limit the present patent application patent right; Simultaneously above description should understand for the special personage who knows the present technique field and implement, so other does not break away from the equivalence of being finished under the disclosed spirit and change or modify, and all should be contained in the claim scope of the present invention.

Claims (10)

1. the semiconductor element pre-burning device with many cabin structures is characterized in that, comprising:
One main pre-burning cabin disposes a plurality of burn-in board in this main pre-burning cabin, and each this burn-in board is provided with a plurality of test jacks, and each test jack can ccontaining semiconductor element;
One buffering pre-burning cabin, this buffering pre-burning cabin disposes one first gate and one second gate, and this buffering pre-burning cabin can communicate with this main pre-burning cabin by this first gate simultaneously;
One shifting apparatus, but these a plurality of burn-in board of this shifting apparatus transfer and be displaced into this first gate and this second gate between; And,
One control device, this control device can be controlled test and this shifting apparatus in this main pre-burning cabin and this buffering pre-burning cabin respectively.
2. the semiconductor element pre-burning device with many cabin structures as claimed in claim 1 is characterized in that, wherein should cushion the volume in pre-burning cabin less than this main pre-burning cabin.
3. the semiconductor element pre-burning device with many cabin structures as claimed in claim 1, it is characterized in that wherein this control device is to electrically connect respectively this burn-in board, and can by each burn-in board and on a plurality of test jacks, each semiconductor element is carried out testing electrical property, and calculate its failure rate.
4. the pre-firing method of semiconductor element with many cabin structures is characterized in that, comprises at least:
An one main pre-burning cabin and a buffering pre-burning cabin are provided, are provided with at least one slot substrate in this main pre-burning cabin, each slot substrate is provided with a plurality of slots;
A plurality of burn-in board are provided, and this burn-in board is provided with a plurality of test jacks, is equipped with semiconductor element in each test jack;
This burn-in board of transfer is to cushioning in the pre-burning cabin;
Carrying out a preheating program, is to be heated in this buffering pre-burning cabin and make the temperature of each semiconductor element on this burn-in board can reach the temperature of pre-burning;
This burn-in board of transfer moves into this main pre-burning cabin with each burn-in board in this buffering pre-burning cabin;
Carrying out testing electrical property, is to provide the testing electrical property signal that each semiconductor element is carried out testing electrical property by control device;
Calculate failure rate, this control device receives by the test signal that each semiconductor element returned, and calculates the failure rate of this each semiconductor element thus; And
Judging whether to finish test, is to judge by this control device whether these a plurality of burn-in board finish burn-in testing.
5. the pre-firing method of semiconductor element with many cabin structures as claimed in claim 4, it is characterized in that wherein this control device judges whether that the mode that finishes burn-in testing comprises a failure rate growth curve and the failure rate experience comparison line of comparing this each semiconductor element.
6. the pre-firing method of semiconductor element with many cabin structures is after a control device judges that some burn-in board has finished burn-in testing, and this control device continues the flow process of execution, it is characterized in that this flow process comprises:
This has finished the burn-in board of burn-in testing transfer, is among burn-in board is moved to buffering pre-burning cabin from main pre-burning cabin;
Carry out the temperature adjustment, the temperature in the buffering pre-burning cabin is lowered the temperature;
Shifting out the burn-in board that this has finished burn-in testing, is that this burn-in board is transferred to outside the buffering pre-burning cabin;
One burn-in board to be measured is provided, and sends among the buffering pre-burning cabin;
Adjust the temperature in the buffering pre-burning cabin, so that the temperature in the buffering pre-burning cabin can reach the temperature of pre-burning;
This burn-in board to be measured of transfer is to main pre-burning cabin;
Carry out testing electrical property, the testing electrical property signal is provided, each semiconductor element is carried out testing electrical property;
Calculate failure rate, receive by the test signal that each semiconductor element returned, calculate the failure rate of this each semiconductor element thus by this control device; And
Judging whether to finish test, is to judge by this control device whether these a plurality of burn-in board finish burn-in testing.
7. the pre-firing method of semiconductor element with many cabin structures as claimed in claim 6, it is characterized in that wherein this control device judges whether that the mode that finishes burn-in testing comprises a failure rate growth curve and the failure rate experience comparison line of comparing this each semiconductor element.
8. the semiconductor element pre-burning device with many cabin structures is characterized in that, comprising:
One main pre-burning cabin disposes at least one burn-in board in this main pre-burning cabin, and this burn-in board is provided with a plurality of test jacks, and each test jack can ccontaining semiconductor element;
One heats up cushions the pre-burning cabin, and this intensification buffering pre-burning cabin disposes one first gate and one second gate, and this intensification buffering pre-burning cabin can communicate with this main pre-burning cabin by one first gate simultaneously;
One cooling buffering pre-burning cabin, this cooling buffering pre-burning cabin disposes this first gate and one the 3rd gate, and this cooling buffering pre-burning cabin can communicate with this main pre-burning cabin by this first gate simultaneously;
At least one shifting apparatus, but these a plurality of burn-in board of this shifting apparatus transfer and being displaced between this first gate, this second gate and the 3rd gate; And,
One control device, this control device can be controlled test and this shifting apparatus in this main pre-burning cabin and this intensification buffering pre-burning cabin and this cooling buffering pre-burning cabin respectively.
9. the semiconductor element pre-burning device with many cabin structures as claimed in claim 8 is characterized in that, wherein this control device is the open and close between this first gate of may command, this second gate and the 3rd gate.
10. the semiconductor element pre-burning device with many cabin structures as claimed in claim 8 is characterized in that, the volume in wherein should heat up buffering pre-burning cabin and this cooling buffering pre-burning cabin is less than this main pre-burning cabin.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475317A (en) * 1993-12-23 1995-12-12 Epi Technologies, Inc. Singulated bare die tester and method of performing forced temperature electrical tests and burn-in
US6197602B1 (en) * 1998-04-15 2001-03-06 Mitsubishi Denki Kabushiki Kaisha Burn-in method for microwave semiconductor transistor
CN1953153A (en) * 2005-10-20 2007-04-25 京元电子股份有限公司 High-temperature bake quartz boat

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5475317A (en) * 1993-12-23 1995-12-12 Epi Technologies, Inc. Singulated bare die tester and method of performing forced temperature electrical tests and burn-in
US6197602B1 (en) * 1998-04-15 2001-03-06 Mitsubishi Denki Kabushiki Kaisha Burn-in method for microwave semiconductor transistor
CN1953153A (en) * 2005-10-20 2007-04-25 京元电子股份有限公司 High-temperature bake quartz boat

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
JP特开平11-238397A 1999.08.31
张召生,等.大规模集成电路预烧作业中分批排序问题的数学模型.《中国管理科学》.2003,第11卷(第4期),全文. *
罗红宇.大功率半导体激光器老化实验台的研制.《吉林工程技术师范学院学报》.2004,第20卷(第12期),全文. *

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