CN101507129B

CN101507129B - Wireless communication device using voltage switchable dielectric material

Info

Publication number: CN101507129B
Application number: CN200680043467.8A
Authority: CN
Inventors: L·科索斯基
Original assignee: Shocking Technologies Inc
Current assignee: Shocking Technologies Inc
Priority date: 2005-11-22
Filing date: 2006-11-22
Publication date: 2013-03-27
Anticipated expiration: 2026-11-22
Also published as: CN101578710B; CN101507129A; CN101578710A

Abstract

A wireless communication device, such as an RFID tag, is provided material that is dielectric, unless a voltage is applied that exceeds the materials characteristic voltage level. In the presence of such voltage, the material becomes conductive. The integration of such material into the device may be mechanical and/or electrical.

Description

Use the Wireless Telecom Equipment of voltage variable dielectric material

Related application

The application requires in the U.S. Provisional Patent Application 60/739 of submission on November 22nd, 2005,725 priority, the name of this temporary patent application is called " RFID Tag Using Voltage Switchable Dielectric Material ", includes aforementioned application in this paper by the mode of quoting herein.

This application also requires the U.S. Provisional Patent Application 60/740 of submission on November 29th, 2005,961 priority, the name of this temporary patent application is called " Light Emitting Devices With ESD Characteristics ", includes aforementioned application in this paper by the mode of quoting herein.

Technical field

Disclosed embodiment relates in general to Wireless Telecom Equipment.More specifically, embodiment described herein comprises that those are integrated or receives the Wireless Telecom Equipment of voltage variable dielectric material (voltage switchable dielectric material).

Background technology

The quantity of Wireless Telecom Equipment and application is more and more.Comprised the chipset and the parts that are used for cellular communication apparatus in these examples, by WiFi(IEEE 802.11 or bluetooth) short-distance wireless communication, and many other application such as radio-frequency (RF) identification (RFID) label.

The RFID label becomes the common method of identifying and following the trail of the objective gradually in the life cycle of target.Having many uses of RFID label is general, such as mark goods and product in making, transport and distributing.The RFID label also is used for dual-use radio transmission.Although the RFID label is in use very effective, the RFID parts are very fragile.Particularly, the RFID label is very sensitive to the full spectrum of threats from external environment condition, because they are in fact semiconductor equipments.

Description of drawings

Fig. 1 shows according to an embodiment of the invention, be used for to generate the equipment of information in radio frequency, and wherein this equipment is built into and has received the voltage variable dielectric material.

Fig. 2 A shows the first of the radio-frequency (RF) identification that is provided with the voltage variable dielectric material (RFID) labeling apparatus according to an embodiment of the invention.

Fig. 2 B shows according to one embodiment of the invention, the second portion of the RFID labeling apparatus shown in Fig. 2 A.

Fig. 2 C shows a kind of alternative application of one or more embodiments described herein.

Fig. 3 shows according to one embodiment of the present invention, is used to form a technology that is integrated with the Wireless Telecom Equipment of VSD material in its electric parts and/or element.

The VSD material of having used that Fig. 4 A-Fig. 4 E shows according to one or more embodiments of the present invention forms the process of RFID labeling apparatus.

Embodiment

Embodiment described herein provides the application of voltage variable dielectric material (VSD) as the part of Wireless Telecom Equipment (for example label or chipset).This VSD material can be provided as the part of encapsulation, or with the electric parts of Wireless Telecom Equipment with element is integrated or combination.Provide such as one or more embodiment; the integrated impact of protecting Wireless Telecom Equipment to avoid the voltage transient such as Electrostatic Discharge and electric over-stress (EOS) of VSD material, and the harm of avoiding humidity, impact and other electricity or machinery.

Go for the example of the Wireless Telecom Equipment of embodiment described herein, comprised the RFID label, the cellular communication chip, short-distance wireless communication chip and equipment (for example providing according to bluetooth or IEEE 802.11 standards), and other can receive or launch the equipment for the microwave signal of communication.

As used herein, " voltage variable material " or " VSD material " is any combination with composition or composition of following feature, wherein said being characterized as: material is dielectric or nonconducting always, unless this material is applied a voltage that surpasses the material behavior level, in the rear situation, material becomes conduction.Therefore, the VSD material is dielectric, unless there is a voltage (for example, being caused by esd event) that surpasses characteristic levels to be applied on the material, in this case, the VSD material becomes conduction.The VSD material can also be any material that is characterized as being the nonlinear resistance material.

There are various VSDM.Such as United States Patent (USP) 4,977,357, United States Patent (USP) 5,068,634, United States Patent (USP) 5,099,380, United States Patent (USP) 5,142,263, United States Patent (USP) 5,189,387, United States Patent (USP) 5,248,517, United States Patent (USP) 5, the document of 807,509, WO 96/02924 and WO 97/26665 and so on has provided the example of voltage variable dielectric material.In one embodiment, the VSDM material is corresponding to the material of " SURGX " manufacturing and sale under trade (brand) name.

One or more embodiments provide the application to following VSD material, and described VSD material comprises the insulator of 30-80%, the conductor of 0.1-70% and the semiconductor of 0-70%.Insulating material includes but not limited to organosilicon polymer, epoxy, polyimides, polyethylene, polypropylene, polyphenylene oxide, polysulfones, sol gel film, creamer (creamer), silicon dioxide, aluminium oxide, zirconia and other metal oxide insulators.The example of electric conducting material comprises metal, such as copper, aluminium, nickel, stainless steel.Semi-conducting material comprises organic and inorganic semiconductor.Some inorganic semiconductors comprise silicon, carborundum, boron nitride, aluminium nitride, nickel oxide, zinc oxide, zinc sulphide.The organic semi-conductor example comprises poly-3-hexyl thiophene, pentacene, perylene, carbon nano-tube and C60 fullerene.Concrete configuration and composition can be chosen to make it to be best suited for the special applications of VSD material.

According to embodiment, a Wireless Telecom Equipment has comprised the combination of a conducting element, and the combination of conducting element is built into emission or the reception that can realize wireless signal.The VSD material may be provided in such equipment, and this equipment has following characteristic, and when the voltage that this material applied above the character voltage level, this equipment is from the conduction that becomes of dielectric.This VSD material can be placed with when the voltage that runs into above the character voltage level, with at least a portion ground connection of this equipment.

In one embodiment, the VSD material is integrated among the electricity or mechanical part of RFID equipment.The VSD material can be provided to protect this equipment to exempt from such as electricity events such as static discharges (ESD) to endanger.

According to an embodiment, the VSD material partly or integrally encapsulates this RFID equipment.

In addition, one or more embodiments are brought the VSD material into and (for example: in rebasing substrate RFID equipment) (underlying substrate) or on the plate are placed with Wireless Telecom Equipment on it.The VSD material also can be added in the substrate, and this substrate is used to form some or all remaining equipment subsequently.The ion deposition process is for example electroplated, and when the VSD material is in conduction state, can be used for forming conducting element in substrate.

In addition, one or more embodiments provide and have included the VSD material in this shell, intermediate layer or be provided to that some is integrated or be connected in other structures on the Wireless Telecom Equipment.

According to an embodiment, provide a kind of equipment for generating radio frequency identification signal.This equipment comprises an encapsulation, a substrate that is provided among this encapsulation, and one or more logical block that is provided on the substrate.These one or more logic elements may generated data, comprises recognition data.Can provide emission element in this substrate, it generates the signal with this identifying information.This equipment also can comprise the VSD material that is provided among this encapsulation.This VSD material can be placed with, when the voltage that runs into above this VSD character voltage level, with at least a portion ground connection of this equipment.

In addition, one or more embodiments provide the VSD material in electroplating process or be used to form the conducting element of Wireless Telecom Equipment and other ion deposition technique of parts in application.In one embodiment, form substrate to include a VSD material layer in.One deck resistance material (resistive material) is provided above this VSD material layer.This resistance material is optionally removed, and to form a pattern, this pattern has comprised that those will be positioned at the position of the electric parts below of this Wireless Telecom Equipment.These parts can comprise that any one or a plurality of (i) will be embedded into one or more logic elements of this equipment, (ii) wireless communication unit (for example antenna), (iii) interconnection element between these one or more logic elements and this wireless communication unit, (iv) power source, or (v) interconnection element between this power supply and this one or more logic elements or this wireless communication unit.In case form this pattern, just apply voltage above the character voltage level of this VSD material to this substrate.Executing the alive while, this substrate is being exposed to electric conducting material, so that electric conducting material and this VSD material combination.This position that has just caused being provided at least a portion pattern in the substrate forms the conductivity circuit.

Particularly, one or more embodiments provide, and the identification of the position that will be positioned at based on electricity component or parts to this Wireless Telecom Equipment removes non-conductive or resistance material.For example, in RFID equipment, selected position can coincide with antenna element location, and the position of perhaps extending the circuit of conductivity between this antenna element and this microchip or power source coincides.

Wireless Telecom Equipment with the VSD material

Fig. 1 shows receiving or integrated a kind of Wireless Telecom Equipment of VSD material according to one embodiment of the invention.This class Wireless Telecom Equipment of describing among Fig. 1 can be corresponding to RFID label, cellular chip, short-distance wireless electrical chip (for example, bluetooth or WiFi equipment) or microwave communication parts.

In one embodiment, an equipment 100 has comprised an encapsulation 105, and this encapsulation comprises a communication device 120, a logic element 130 and a power source 140.This encapsulation 105 is not all to be necessary in all are used, and for example equipment 100 will be incorporated into the situation in the shell of another equipment (for example cell phone).This power source 140 can be corresponding to active or passive structure, to provide power to communication device 120 and logic element 130.This logic element 130 can be corresponding to a chip (for example, microchip), or circuit that can generated data and the combination of equipment.Such as in RFID uses, this microchip can generate identifying information, and this communication device 120 is transmitters, its emitting radio frequency signal, and this radiofrequency signal and the identifying information that is provided by this microchip communicate.

In other wireless device execution modes, this communication device 120 can be the inductance or the capacity cell that create detectable electric field change.This logic element 130 also can have more complicated logic.For example, in cellular chip, this logic element can be corresponding to a processor and relevant logic, and it carries out various procedures by the signal that provides from this communication device 120.

According to type and function, miscellaneous part for example memory can be included in this encapsulation, and can be coupled to conductively in this power source 140 and the logic element 130.For example in RFI D used, this communication device 120 can be corresponding to an antenna, this antenna radio frequency signal generation, and this radiofrequency signal utilizes signal modulating characteristic etc. that identifying information is provided.If equipment 100 has the active power source, this power source 140 can comprise battery on the plate (on-board battery).If equipment 100 is passive (for example RFID equipment), this power source 140 can be corresponding to circuit board or a receiver that generates energy from external signal or application.Such as, as receiver, this power supply 140 may be constructed such from other equipment received RF signals, then generates the internal power signal, to activate communication device 120 and logic element 130.

Interconnection element 122 can realize that identifying information and other data are from this logic element 130 communicating by letter to this communication device 120.Similarly, power Connection Element 142 can be assigned to communication device 120 and/or logic element 130 from power source 140 with power.Although power source 140 is illustrated as discreet component, it may be implemented as distributed element, or and other elements combinations.For example, other elements can be equipped with circuit board receiver, so that those elements and element on every side are supplied with energy because of applying of external radio-frequency signal.

Among an embodiment, the VSD material is integrated, includes in or be combined to electric parts and the element of equipment 100.According to one or more embodiments, the VSD material can the integrated or combination with communication device 120, and interconnection element 122 extends conductivity between this communication device 120, this logic element 130 and this power Connection Element 142.Also can there be many other positions for VSD material 110.For example, this logic element 130 can the integrated or combination with VSD material 110, or is placed on the VSD material or the next door.Similarly, a receiver that has comprised power source 140 can make up or combinations with VSD material 110.When with the electric components of equipment 100 and elements combination or when integrated, this VSD material 110 can provide the protection for esd event and EOS.In addition, describe such as other embodiments, the application of VSD material 110 can be used in plating and other metal deposition process, so that those have comprised that the electric parts of equipment 100 and the conducting element of element can wholely be formed integrally as with this VSD material 110.

As the additional of above-mentioned embodiment or substitute, VSD material 110 can be combined or be integrated in the middle of the mechanical structure of this equipment 100.In one embodiment, VSD material 100 can form a part or all parts of this encapsulation 105.This VSD material also can be used for the part of miscellaneous part of a plurality of electric components of sealed in unit 100 as those.As additional or alternative, VSD material 110 also can be used to adhere to the part of encapsulation 105.When using this mechanical structure, this VSD material 110 can provide the protection for multiple event, and for example those are with the event of high level static discharge.

RFID label with the VSD material

Fig. 2 A and Fig. 2 B show according to an embodiment of the invention, have used the structure of the RFID equipment of VSD material.The embodiment of Fig. 2 A shows the electric parts that those are provided with RFID equipment first 210, and second portion 260 mainly provides encapsulation.Other execution mode regulations, electric parts and element both also provided in part 260 in part 210.

In the embodiment shown in Fig. 2 A, first 210 has comprised a microchip 220 as logic element, the antenna 224 as communication device, and a power source 230.These microchip 220 generated datas, these data comprise the identifying information of characteristic or the attribute aspect of RFID equipment.This antenna 224 can be comprised of the conducting wire, and radiofrequency signal can be sent in these conducting wires when being supplied with energy.Interconnection element 222 can extend conductivity between microchip 220 and antenna 224.When this microchip 220 was supplied with energy, this microchip can number be given antenna 224 identifying information and other data transmission, and wherein these data are used as signal and send to RFID scanner or reader.

By the radiofrequency signal that antenna 224 generates, can have corresponding to this identifying information feature (for example: frequency).Shown in an execution mode in, this antenna 224 comprises a plurality of circuit elements 225, these circuit element arranged concentric.Can also adopt other arrangements of circuit or circuit board for antenna 224.

In one embodiment, power source 230 is equivalent to a battery (on-board battery) on the circuit board, and this battery generating power signal is to be provided with energy to antenna 224 and microchip 220.In another embodiment, power source 230 can be equivalent to a circuit board, or the distribution of electric line, and/or can receive the applications radiofrequency signal and be provided with the resource of energy by this radiofrequency signal.In a rear situation, this power source can be separated with conducting element, also can make up with it, and wherein conducting element is served other purposes.Power is provided to conductive lead wire (lead) and the circuit of other elements and parts from power source 230, is called as power source Connection Element 232.

RFID equipment by part 210 and part 260 are combined to form can be equipped with the VSD material in any place in all multiposition.According to one or more embodiments of the present invention, position 242-250 has represented the VSD material and can be integrated into possible position in this RFID equipment.Because position 242-250 is the representative to other similar position on this equipment and zone, thereby, also be applicable to a class position by this position representative for the VSD material in the discussion of any given independent position 242-250.

Position 242-246 be to the more such positions on the RFID equipment or the zone expression, described position or zone be the VSD material can with the electric device of this RFID equipment or position and the zone of component integration or combination.According to an embodiment, the VSD material may be provided in the position by position 242 representatives.In such position, the VSD material can make up with conductivity power source Connection Element 232 or be integrated, and this conduction power source Connection Element 230 extends conductivity between other elements of power source 230 and this RFID equipment.

As embodiment additional or that substitute, the VSD material can be provided in 244 positions as representative take the position.In such position, this VSD material can form with those circuit element 225 combinations or integrated of antenna 224.In this way, the VSD material can be provided for the antenna element 224 of this RFID equipment, perhaps as its part.

Similarly, the VSD material may be provided in the position by position 246 representatives.In such position, this VSD material can make up with interconnection element 222 or be integrated, and this interconnection element extends conductivity between microchip 220 and antenna 224.According to other different embodiments, also can provide many other to be used for the position of VSD material.For example, the VSD material can be provided for microchip 220 or power source 230 or be provided under it.

VSD material and electric device combination or integrated mode can change.In one embodiment, VSD can be placed on electric parts or the element (for example circuit 225 of antenna 224) or the next door.As an alternative, as to the described embodiment of Fig. 4 A-4E, this VSD material can be used for forming (for example by combination or deposition), and those are provided at the conducting element of described a plurality of positions.

Mechanically, first 210 and second portion 260 can be formed by in the multiple material any one, to obtain to be suitable for the physical features that this RFID equipment is used.For example, part 210 and part 260 can be formed by flexible material, and forming such packing 202, this packing is suitable for this equipment may be through by bending or the application of warpage.As an alternative, can utilize rigid material formation for the packing of other application, in these were used, this equipment may be knocked, drop or stand physical damnification.Substitute or add as a kind of of embodiment to wherein VSD and electric device and component integration or combination, one or more embodiments provide, and this VSD material is integrated or is combined in the aspects such as mechanical part of this RFID equipment.

With reference to figure 2A and Fig. 2 B, the VSD material can be provided in the position by position 248 representatives.In such position, this VSD material can be combined or be integrated among the packing 202.As selection, the VSD material can be used as the downside that a layer or thick layer are provided to this packing, perhaps as any one a band that extends through in part 210 or 260.In one embodiment, the formation of VSD material can be matched with physical characteristic and the attribute for the material of this packing.For example, the composition of VSD material can change, with the composition of coupling packing 202.

With reference to figure 2A and Fig. 2 B, one or more embodiments also provide, and the VSD material can be used as adhesive and is provided at position by position 250 representatives, so that part 210 and part 260 are joined to together.According to an embodiment, can configure the composition of VSD material to strengthen adhesive properties.When the position that is applied to by position 250 representatives, this VSD material can promote the adhesion between part 210 and the part 260.

Fig. 2 C shows the alternative applications of using one or more embodiments described herein.In the embodiment in Fig. 2 C, a wireless device 270 has comprised a substrate 274, parts such as processor 276 (perhaps chip or other logic elements) and other resources 278(for example: memory) be positioned in this substrate.

Communication device 280(emittor/receiver) also can provide at liner 274.This communication device 280 can generate or received RF signal (for example in the honeycomb scope or in by the IEEE802.11 restricted portion), perhaps as an alternative, provides or detect inductance or capacitive field change.

Have the multiple conducting element of circuit 275 and lead-in wire form, can be distributed between processor 276 and the resource 278.With the power source 282 that battery forms on the plate occurs, perhaps be used for receiving the receiver of wireless power transmission, also can be included among the substrate 274.This substrate 274 also can comprise outside and inside order wire 284,285, communicates by letter with the signal of processor 276 with realization.

In one embodiment, outside and inside order wire 284,285 can extend to a connector or port (for example, cable) to allow another processor to receive communication from this processor 276.In one embodiment, outside and inside order wire 284,285 can extend to wireless communication unit 280, to realize a wireless communication port.

According to one or more embodiments, the VSD material can with the machinery of equipment 270 or electric device be integrated or combination.By the position of position 292 representative show the VSD material can with communication device 280 in conjunction with or integrated.By the position of position 294 representative show the VSD material can with outside or inside order wire 284,285 in conjunction with or integrated.In addition, as Fig. 2 A(RFID is used) embodiment described, one or more embodiments can provide the integrated or combination of other resources, parts and the conducting element of VSD and equipment 270.For example, the VSD material can: (i) and power source 282 and/or the integrated or combination from the power line of its extension, or (ii) and processor 276 and/or between processor 276 and communication device 280 or other resources 278, extend the integrated or combination in the conducting wire of communication.

Such as the description to the embodiment of Fig. 2 A and Fig. 2 B, this VSD material can also with shell or the combination of other mechanical structure of equipment 270.This VSD material also can be combined for adhesive, perhaps replaces the use of this adhesive, mechanically retaining element or shell.

Any embodiment about describing with regard to Fig. 2 A-2C can design or select this VSD material, (for example: the character voltage level of the puncture voltage RFID label) is lower than this Wireless Telecom Equipment to make it to have.In other words, embodiment can provide, and the character voltage level of this VSD material is lower than the minimum levels that a meeting becomes this Wireless Telecom Equipment can not the to operate transient voltage of surge (for example, from).

With VSD material forming device

Fig. 3 shows and a kind ofly is used to form the technology of Wireless Telecom Equipment according to one embodiment of the present invention, and described Wireless Telecom Equipment is integrated into the VSD material in its electric parts and/or element.Method as described in Figure 3 can be used to form the equipment that transmits (for example, the RFID label, cellular chip, the WiFi/ Bluetooth chip, etc.), described signal comprises radiofrequency signal, microwave signal and is used for the signal that capacitive/inductive is used.

Following document description use the VSD material to electroplate or form the current techique of circuit and parts: the U.S. Patent application 10/941,226 of submitting on September 14th, 2004, name is called

" Current Carrying Structure Using Voltage Switchable Dielectric Material ", Lex Kosowsky is unique inventor; Above-mentioned application is United States Patent (USP) 6,797, the formal U.S. Patent Application No. of 145(is 10/315,496) continuation application, this United States Patent (USP) was submitted on December 9th, 2002, name is called " Current Carrying Structure Using Voltage Switchable Dielectric Material ", and Lex Kosowsky is unique inventor; Above-mentioned application is again the continuation application of U.S. Patent application 09/437,882, and this application was submitted to November 10 in 1999, now abandoned; The priority of above-mentioned application requirement U.S. Provisional Application 60/151,188, this application was submitted on August 27th, 1999, now expired.All aforementioned application are included respectively in this paper according to purposes separately.

In step 310, the VSD material is applied to one and remains to be arranged in the substrate or surface of conductive component and element on it.May be deposited to the amount of suprabasil VSD material, according to the application of described process, thickness range is between 1 micron to 1000 microns.

In step 320, the non-conducting material layer is provided on the VSD material.For example, can deposit photo anti-corrosion agent material at the VSD material.

Step 330 provides non-conductive layer to be patterned in the substrate.Described patterning process some zones of having exposed, these zones in position and subsequently the formation part of conductor element overlap, and these conductor elements will comprise the some parts of this wireless device.For example, this patterning can optionally be specified some exposure areas, and the formation position of these exposure areas and radiated element overlaps, and these radiated elements have comprised for the inductance or the capacity cell that transmit.In one embodiment, for non-conductive layer is carried out patterning, can be to the non-conductive layer using mask.The conducting element of the exposure area of pattern and emission element that will forming device or the position of parts overlap.For wireless device as described in Figure 1, exposure area and will coinciding for communication device provides the position of circuit.As another embodiment, with reference to the embodiment among figure 2A and Fig. 2 B, what position this pattern can be limited to and provide antenna 224 for this RFID equipment.In another embodiment, what position this pattern can be limited to and provide inductance or capacitance signal communication device for multiple wireless device.

In step 340, the VSD material is triggered or is transformed into conduction state from the dielectric state.Can apply a voltage that surpasses the material behavior level to this VSD material.This voltage can be applied on the thick layer that comprises the VSD material, or is applied to the base part that is positioned at below the VSD material.In a rear situation, being positioned at the following base part of VSD material can be (for example being formed by copper or other metals) of conduction, with the Portable belt electric charge to the VSD material.In some cases requirement may be arranged to the voltage that is applied on the conductive substrates, so that the linear conductance of avoiding the VSD material to form in the substrate direction.The voltage that applies can be stable (for example " DC ") or pulsed.

When the VSD material was conduction, step 350 provides carried out the ion deposition process (for example: circuit) to form conducting element in the exposure area of pattern.In a lot of techniques any one can be used to ionic medium is deposited to the exposure area that is limited by the non-conductive layer pattern.In one embodiment, carry out electroplating process, in this process, be immersed in the electrolyte with the substrate of VSD material and patterning photo anti-corrosion agent material.

The as an alternative enforcement of property is carried out ion deposition with the powder coating and their application process.In this process, powder particle is by with upper electric charge and be applied to the exposure area that is limited by pattern.Applying of this powder can realize by powder deposition is immersed in the powder pond to the exposure area or with substrate.

Further, another execution mode can use the electron spray process.Ionic medium can be included in the solution with the form of charged particle.This solution can be applied in the substrate when the VSD material is conduction.The application of this spraying can comprise the use to prepared Chinese ink or coating.

Other deposition techniques also can be used for carrying out the ion deposition on the VSD material when the VSD material is in conduction state.For example, such as physical vapor deposition (PVD) or chemical vapor deposition (CVD) equal vacuum deposition process.In PVD, metal ion be introduced in the chamber with the gas Ar ion mixing.Can make to be positioned at suprabasil VSD material for what conduct electricity, have positive charge, so that the ion in absorption and the binding cavity.In CVD, can apply the skim ionic material to the VSD material on the substrate surface.

In step 760, non-conducting material (selectively) is removed from substrate, thereby stayed formed conducting element.In one embodiment, end liquid (for example KOH) or water are applied in the substrate, to remove photo anti-corrosion agent material.Conducting element can be placed and used to make various parts and/or the regional interconnective element of substrate corresponding to lead-in wire, circuit and other.

After removing the photo anti-corrosion agent material layer, the step that one or more embodiments provide the electricity component to forming carried out in substrate to polish.In one embodiment, used chemico-mechanical polishing to polish this substrate.

The substrate of gained has comprised the electricity component of the ability with inherent reply transient voltage and EOS.For Wireless Telecom Equipment, can utilize such as the process described in Fig. 3 and form circuit element, this circuit element has comprised antenna or the communication device of this equipment, and other elements or parts.In case this substrate forms, the equipment such as microchip, memory member and other equipment are installed on the circuit board in the precalculated position that the pattern with electroconductive component and element coincides.

Can be according to use carrying out other steps, for example, can install in the packing with the substrate of conducting element.Packing itself also can comprise additional VSD material.Gained equipment can be corresponding to a transmitter that is used for radiofrequency signal, microwave or is used for the signal of capacitive/inductive application.

Fig. 4 A-Fig. 4 E shows a process that is used to form RFID equipment according to one or more embodiments of the present invention.For electric parts and the element that makes VSD material and LED equipment is formed integrally as, can carry out the described process such as Fig. 4 A-Fig. 4 E.Except other advantages, the application of VSD material has been simplified the process that forms the RFID process, and simultaneously, so that the electric parts of this RFID equipment and element have inherent reply transient voltage and the ability of EOS.Particularly, the VSD material is integrated into makes the VSD material in the electric parts of LED substrate (as when esd event occurs) can be with equipment ground when transient voltage occurring.

In by the step shown in Fig. 4 A, substrate 410 is formed and comprises VSD material 412. in one embodiment, and VSD material 412 is deposited as the layer that covers in the rebasing substrate 408.

Subsequently, Fig. 4 B shows a step, and wherein non-conductive layer 420 is deposited in the substrate 410.This non-conductive layer 420 can corresponding to, for example, photo anti-corrosion agent material.

In a step shown in Fig. 4 C, non-conductive layer is patterned, to form exposure area 430.As the result of described forming process, the pattern of gained is corresponding to remaining to be provided to conducting element on the RFID equipment and the pattern of parts.

In the step that Fig. 4 D describes, conducting element 440 is formed on the exposure area more than 430, and this exposure area 430 is that the pattern that forms in the step by Fig. 4 C limits.According to an embodiment, basadly apply a voltage that has surpassed the character voltage of VSD material 412.Applying this voltage, to cause VSD material 412 be conduction state from the dielectric state-transition.In case VSD material 412 becomes conduction when making alive, then ionic medium is deposited in the exposure area that is limited by this pattern, to form electric device and parts.

In one embodiment, the ionic medium deposition is carried out by electroplating process.In this electroplating process, this substrate 410 is immersed in the electrolyte, in this electrolyte, from the ionic medium of solution in the exposure area that pattern limits and VSD material (this VSD material is in conduction state) combination.The result of this step is, electric conducting material 440 is formed in this substrate 410, and VSD material 412 be positioned at conducting element or parts below, described conducting element or parts are obtained from the formation of electric conducting material 440.

Described such as the embodiment to Fig. 3, following substrate 408 can be formed by conductive material, this conductive material such as metal.Can apply voltage a contact that coincides with substrate 408, rather than directly apply voltage to VSDM material 412.For example, this voltage can be provided in below the substrate 408.Adopt such voltage applying mode, such as linearity (the being level) conductivity that can avoid on the VSDM material.

As described, the voltage that applies can be stable also can be pulsed.

Can carry out other ionic medium deposition process.For example, as Fig. 3 embodiment is described, can utilize the powder coating and their application process charged powder particle to be deposited to the exposure area that is limited by pattern.Alternately, electron spray can force ionic medium combination and the formation electricity material in the exposure area that pattern limits in the liquid.

In the step of Fig. 4 E, non-conductive layer 420 is removed, and polishing or reduce suprabasil conducting element 440, to form some or all of circuits, lead-in wire and RFID equipment unit.Need to keep in the application of non-conductive layer 420 at some, non-conductive layer 420 can be removed.

How parts and element that Fig. 4 E shows this RFID equipment form under described process.In one embodiment, VSD material 412 and circuit element are integrated and be positioned under the circuit element, this circuit element for example is, (i) forms the antenna 474 of this RFID equipment, and the Connection Element 476 that (ii) is formed on the extension conductivity between microchip 492 and the antenna 474

One or more embodiments also can provide, and this VSD material 412 is positioned under the circuit element under the battery 494, or is positioned under the circuit element 478, and circuit element 478 takes power to antenna 474 and/or microchip 492 from battery 494.

Allow to create electric parts and element in the RFID equipment that covers the VSD material such as the described embodiment of Fig. 4 A-4E, and therefore comprise the inherent ability with transient voltage ground connection, this transient voltage may produce because of ESD.Compare with more conventional arts, this RFID also can make by procedure of processing still less.

Although described the use of VSD material in the embodiment of the descriptions such as Fig. 4 A-4E and other places of the present invention, one or more embodiments provide the use of VSD material on single RFID equipment of heterogeneity and structure.For example, VSD material 412 can comprise to the application in the substrate (Fig. 4 A) uses multiple VSD material, and every kind all has heterogeneity.This just has the machinery of the most suitable certain electric parts or element or the VSD material of electrical characteristics so that can use those to the design of RFID equipment.For example, it is desirable near the battery of RFID equipment zone provides the VSD material of the character voltage level with the voltage that is higher than microchip 492 near zones, because microchip may be more responsive to surge current, or this battery may provide larger voltage spike.

May be provided in these suprabasil other parts and comprised luminaire, for example LED and OLED.Of No. 60/740,961, U.S. Provisional Patent Application, LED and OLED also may be very sensitive to the puncture that transient voltage causes.One or more embodiments provide to be formed on this suprabasil circuit element, with lead-in wire and the interconnection element that is provided to luminaire.The VSD material of selecting can have the character voltage level of the level of the conducting element that is lower than RFID equipment and luminaire and parts.

Although Fig. 4 A-4E has specified establishment RFID equipment, any Wireless Telecom Equipment of describing in conjunction with other embodiments of this application can partly create or form by the process described in Fig. 4 A-4E.For each substituting application, the position of conducting element and parts can determine the pattern of photoresist (or non-conductive layer).

In addition, consider any described embodiment, this Wireless Telecom Equipment may be multidimensional.For example, the parts that are used for RFID equipment or other communication devices can be received in two faces of substrate, and can be interconnected conductively by the one or more through holes of use.As an alternative, the preparation of conductive vias can be carried out with any traditional technology.Alternately, one or more embodiments provide as follows and form through hole in substrate shown in the embodiment of Fig. 4 A-4E: (i) bore or form a hole 409, this hole extends through substrate 408(Fig. 4 A); (ii) when applying the VSD material, the VSD material is extended in the through hole 409; (iii) when the patterning photo anti-corrosion agent material, form pattern, be used for making the conducting wire element extend to the path on 409 borders, hole thereby form one; And (iv) carry out ion deposition so that this through-hole surfaces has electric conducting material, form conductivity or exercisable through hole 419, and (v) repeating said steps arranges electricity component and parts with the opposite face in substrate.Use process that the VSD material forms the through hole 419 of electroplating at United States Patent (USP) 6,797, more detailed description is arranged in 145, the application includes its integral body in by the mode of quoting.

As replenishing of two-sided substrate, through hole can extend to conductivity a plurality of conductive layers, to obtain the appropriate substrate of design.For example, some substrates comprise that those contain the interior thickness layer of electric parts and element.Through hole can extend to connect this interior thickness layer that is embedded in the whole thick layer of substrate.

Alternate embodiment and execution mode

Although embodiment is to provide for equipment (Wireless Telecom Equipment, RFID label) herein, embodiment also can comprise antenna or electric capacity or inductive fields element, and this is by using the VSD material to form.Such communication component can be added in the equipment of for example chipset and RFID label, is independent of the formation of the remainder of this equipment.For example, the antenna of RFID label can be used as independent sector and forms, and makes up in installation step with this RFID label.

Blanket

Although exemplary embodiment of the present invention is described in detail herein, should be appreciated that, this invention is not limited to those accurate embodiments.Equally, many modifications and variations are for those skilled in the art and know.Thereby scope of the present invention should be limited by following claim and its equivalent.In addition, as being contemplated that herein or describing separately or as the specific characteristic of an embodiment part, can with the part combination of other features of describing separately or other embodiments, even other features and embodiment are not mentioned this specific characteristic.At this, description is not made in combination and should do not got rid of the inventor to combination prescription like that.

Claims

1. Wireless Telecom Equipment comprises:

The combination of an electric device, it is suitable for realizing wireless transmission or the reception of signal; With

A protection mechanism that comprises a kind of voltage variable dielectric (VSD) material, this VSD material can be when the voltage that applies to this VSD material above a character voltage level of this VSD material, from the conduction that is transformed into of insulation,

Wherein, the described protection mechanism that comprises this VSD material is by the integrated positioning with respect to described electric device, provides ground protection as this electric device when surpassing the transient voltage of puncture voltage of this electric device take one of at least a portion experience at described equipment.

2. the equipment of claim 1 also comprises:

A substrate;

The combination of wherein said electric device comprises and is provided at this suprabasil one or more logic elements; And

Wherein said VSD material is provided in this substrate as a layer, with described one or more logic element ground connection.

3. the equipment of claim 1 also comprises an encapsulation, and it has encapsulated the combination of electric device, and wherein, this encapsulation comprises this VSD material, is provided at the combination of the described electric device in this encapsulation with protection.

4. the equipment of claim 3, wherein, this VSD material is provided as a kind of for encapsulating or the adhesive of one or more part combinations of its parts.

5. Wireless Telecom Equipment comprises:

A substrate;

One or more this suprabasil logic elements that are provided at, wherein, these one or more logic element generated datas, described data have comprised the identifying information about this equipment;

One is provided at this suprabasil emission element, and wherein, this emission element is configured to generate signal, and described signal carries the identifying information from these one or more logic elements; And

Wherein, the described protection mechanism that comprises this VSD material is by with respect to described logic element or described emission element location, provides ground protection as this logic element or this emission element when surpassing the transient voltage of puncture voltage of this logic element or this emission element take one of at least a portion experience at described equipment.

6. the equipment of claim 5 also comprises an encapsulation, and this encapsulation comprises these one or more logic elements and this emission element, and wherein, this VSD material is provided in this encapsulation.

7. the equipment of claim 5, wherein, described protection mechanism is positioned so that the character voltage level of this VSD material is exceeded when described equipment experiences described transient voltage.

8. the equipment of claim 5, wherein, a layer of this VSD material is provided in the described substrate.

9. the equipment of claim 8, wherein, at least one in this emission element or this one or more logic elements is placed on this substrate, to cover at least a portion of this VSD material layer.

10. the equipment of claim 9, wherein, to make this VSD material transition be to carry the voltage of electric current by apply one to this VSD material when carrying out electroplating process, comprise into those with this and to be formed at element on this VSD material, so as in this emission element or this one or more logic elements at least one is placed on this substrate, to cover at least a portion of this VSD material layer.

11. the equipment of claim 9, wherein, this emission element comprises one group of conducting wire, and wherein, at least a portion of this group conducting wire is placed to cover this VSD material layer.

12. the equipment of claim 9, wherein, this equipment comprises conducting element, this conducting element is arranged with interconnected these one or more logic elements and this emission element, and wherein, at least a portion of described interconnection element is placed in this substrate, to cover at least a portion of this VSD material layer.

13. the equipment of claim 5, wherein, this encapsulation comprises a top layer and a bottom, and wherein, a layer of this VSD material is provided as the adhesive between this top layer and bottom.

14. the equipment of claim 5, wherein, at least one in this emission element or this one or more logic elements makes up or contacts with a layer of this VSD material.

15. the equipment of claim 5, wherein, this equipment also comprises a power source and power Connection Element, described power Connection Element this power source and, extend conductivity between in this emission element or this one or more logic elements at least one, and wherein, at least a portion of at least one in this power source or the power Connection Element and a layer of this VSD material combination or contact with at least a portion of a layer of this VSD material.

16. the equipment of claim 5, wherein, this equipment also comprises a power source and power Connection Element, described power Connection Element this power source and, extend conductivity between in this emission element or this one or more logic elements at least one, and wherein, at least one in this power source or the power Connection Element is placed in this substrate at least a portion with a layer that covers this VSD material.

17. the equipment of claim 15, wherein, this power source is receiver, is used for receiving the external power signal that applies.

18. a method that is used to form Wireless Telecom Equipment, the method comprises:

Form a substrate to comprise layer of material, wherein, this material has when applying the voltage that surpasses a character voltage level to this material, is transformed into the characteristic of conductivity from dielectricity;

Arrange one deck patternable resistance material at one deck voltage variable dielectric (VSD) material, wherein, this VSD material is disposed in the substrate, and can carry electric current from being transformed into of insulation, this electric current produce from one surpass this VSD material a character voltage level apply voltage;

Optionally to this patternable resistance elements patterning, at least a portion with this VSD material that exposes, wherein the exposed portion of this VSD material in position and subsequently the formation part of conductor element overlap, described conductor element will comprise the some parts of this wireless device;

Apply a voltage to this VSD material layer, trigger with at least a portion of the VSD material that will be exposed and become conduction;

When applying this voltage, apply ionic medium at least a portion of the VSD material that exposes to this substrate, to form one or more structures of emission or the reception that can realize wireless signal;

Wherein, place this VSD material layer, to provide electrostatic discharge (ESD) protection as this Wireless Telecom Equipment when this Wireless Telecom Equipment subsequent working.

19. the method for claim 18 wherein, applies ionic medium to this substrate and comprises one of the following process of carrying out:

(i) electroplating process, this substrate is immersed in the electrolyte in this process;

(ii) powder coating and their application process is applied to charged powder particle the exposure area of this substrate in this process;

(iii) electron spray process is applied in this substrate in this process intermediate ion spraying; Or

(iv) vapor deposition processes.

20. a Wireless Telecom Equipment comprises:

An encapsulation;

A substrate that is provided within this encapsulation;

Wherein, this substrate is formed as follows:

Arrange one deck patternable resistance material at one deck voltage variable dielectric (VSD) material, wherein this VSD material is disposed in the described substrate, and can carry electric current from being transformed into of insulation, this electric current produce from one surpass this VSD material a character voltage level apply voltage;

One or more this suprabasil logic elements that are provided at, wherein, these one or more logic element generated datas, described data comprise recognition data;

One is provided at this suprabasil emission element, and these parts generate signal, and described signal carries this identifying information;

One or more interconnection elements, this interconnection element extends conductivity between described one or more logic elements and this emission element;

Wherein, this VSD material layer is placed, and at least one in described logic element, described emission element or the described interconnection element when this Wireless Telecom Equipment subsequent working provides electrostatic discharge (ESD) protection.

21. the equipment of claim 20 also comprises a power source, and one or more power Connection Element, described power Connection Element power source and, extend conductivity between at least one in emission element or this one or more logic elements.

22. the equipment of claim 20, wherein, at least one in this power source or the power Connection Element used and has been formed at this suprabasil conducting element.

23. the equipment of claim 22, wherein, this power source is for the receiver that receives the external power signal that applies.