CN101523608A - 包括双应力源的n沟道mosfet及其制造方法 - Google Patents
包括双应力源的n沟道mosfet及其制造方法 Download PDFInfo
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- CN101523608A CN101523608A CNA2007800183087A CN200780018308A CN101523608A CN 101523608 A CN101523608 A CN 101523608A CN A2007800183087 A CNA2007800183087 A CN A2007800183087A CN 200780018308 A CN200780018308 A CN 200780018308A CN 101523608 A CN101523608 A CN 101523608A
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
Description
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/420,047 US7279758B1 (en) | 2006-05-24 | 2006-05-24 | N-channel MOSFETs comprising dual stressors, and methods for forming the same |
US11/420,047 | 2006-05-24 | ||
PCT/US2007/069100 WO2007140130A2 (en) | 2006-05-24 | 2007-05-17 | N-channel mosfets comprising dual stressors, and methods for forming the same |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101523608A true CN101523608A (zh) | 2009-09-02 |
CN101523608B CN101523608B (zh) | 2010-11-10 |
Family
ID=38562118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800183087A Expired - Fee Related CN101523608B (zh) | 2006-05-24 | 2007-05-17 | 包括双应力源的n沟道mosfet及其制造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7279758B1 (zh) |
EP (1) | EP2036130B1 (zh) |
CN (1) | CN101523608B (zh) |
AT (1) | ATE521089T1 (zh) |
TW (1) | TWI459557B (zh) |
WO (1) | WO2007140130A2 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130054A (zh) * | 2010-01-20 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | 改善半导体器件的截止漏电流发散的方法 |
CN102693917A (zh) * | 2011-03-25 | 2012-09-26 | 中国科学院微电子研究所 | 热稳定性镍基硅化物源漏MOSFETs及其制造方法 |
CN103811349A (zh) * | 2012-11-06 | 2014-05-21 | 中国科学院微电子研究所 | 半导体结构及其制造方法 |
CN104217955A (zh) * | 2013-06-05 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | N型晶体管及其制作方法、互补金属氧化物半导体 |
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DE102006009272B4 (de) * | 2006-02-28 | 2013-01-03 | Globalfoundries Inc. | Verfahren zur Herstellung eines verspannten Transistors durch eine späte Amorphisierung und durch zu entfernende Abstandshalter |
DE102006019921B4 (de) * | 2006-04-28 | 2010-10-28 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung des Transistors mit eingebetteter Schicht mit Zugverformung mit geringem Abstand zu der Gateelektrode |
DE102006019935B4 (de) * | 2006-04-28 | 2011-01-13 | Advanced Micro Devices, Inc., Sunnyvale | SOI-Transistor mit reduziertem Körperpotential und ein Verfahren zur Herstellung |
US7279758B1 (en) * | 2006-05-24 | 2007-10-09 | International Business Machines Corporation | N-channel MOSFETs comprising dual stressors, and methods for forming the same |
US7625801B2 (en) * | 2006-09-19 | 2009-12-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide formation with a pre-amorphous implant |
US7892935B2 (en) * | 2006-11-30 | 2011-02-22 | United Microelectronics Corp. | Semiconductor process |
US20090035911A1 (en) * | 2007-07-30 | 2009-02-05 | Willy Rachmady | Method for forming a semiconductor device having abrupt ultra shallow epi-tip regions |
CN101447510B (zh) * | 2007-11-27 | 2010-12-22 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
US8048750B2 (en) | 2008-03-10 | 2011-11-01 | Texas Instruments Incorporated | Method to enhance channel stress in CMOS processes |
US7524740B1 (en) | 2008-04-24 | 2009-04-28 | International Business Machines Corporation | Localized strain relaxation for strained Si directly on insulator |
JP5235486B2 (ja) * | 2008-05-07 | 2013-07-10 | パナソニック株式会社 | 半導体装置 |
US8623728B2 (en) * | 2009-07-28 | 2014-01-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming high germanium concentration SiGe stressor |
US8836036B2 (en) * | 2010-01-05 | 2014-09-16 | Globalfoundries Singapore Pte. Ltd. | Method for fabricating semiconductor devices using stress engineering |
US8551845B2 (en) | 2010-09-21 | 2013-10-08 | International Business Machines Corporation | Structure and method for increasing strain in a device |
US20120153350A1 (en) * | 2010-12-17 | 2012-06-21 | Globalfoundries Inc. | Semiconductor devices and methods for fabricating the same |
CN102693916B (zh) * | 2011-03-25 | 2015-01-14 | 中国科学院微电子研究所 | 改进MOSFETs镍基硅化物热稳定性的方法 |
US8592308B2 (en) | 2011-07-20 | 2013-11-26 | International Business Machines Corporation | Silicided device with shallow impurity regions at interface between silicide and stressed liner |
JP5802492B2 (ja) * | 2011-09-09 | 2015-10-28 | 株式会社東芝 | 半導体素子及びその製造方法 |
US8916428B2 (en) * | 2012-01-05 | 2014-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a semiconductor device |
US20130193492A1 (en) * | 2012-01-30 | 2013-08-01 | International Business Machines Corporation | Silicon carbon film structure and method |
US9018690B2 (en) | 2012-09-28 | 2015-04-28 | Silicon Storage Technology, Inc. | Split-gate memory cell with substrate stressor region, and method of making same |
US8927375B2 (en) | 2012-10-08 | 2015-01-06 | International Business Machines Corporation | Forming silicon-carbon embedded source/drain junctions with high substitutional carbon level |
US9419138B2 (en) * | 2014-09-29 | 2016-08-16 | International Business Machines Corporation | Embedded carbon-doped germanium as stressor for germanium nFET devices |
WO2018063166A1 (en) * | 2016-09-27 | 2018-04-05 | Intel Corporation | Techniques for increasing channel region tensile strain in n-mos devices |
CN108962987B (zh) * | 2017-05-19 | 2020-11-13 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
JP6852703B2 (ja) * | 2018-03-16 | 2021-03-31 | 信越半導体株式会社 | 炭素濃度評価方法 |
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- 2007-05-17 AT AT07797521T patent/ATE521089T1/de not_active IP Right Cessation
- 2007-05-17 CN CN2007800183087A patent/CN101523608B/zh not_active Expired - Fee Related
- 2007-05-17 EP EP07797521A patent/EP2036130B1/en not_active Not-in-force
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Cited By (7)
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CN102130054A (zh) * | 2010-01-20 | 2011-07-20 | 中芯国际集成电路制造(上海)有限公司 | 改善半导体器件的截止漏电流发散的方法 |
CN102130054B (zh) * | 2010-01-20 | 2013-05-01 | 中芯国际集成电路制造(上海)有限公司 | 改善半导体器件的截止漏电流发散的方法 |
CN102693917A (zh) * | 2011-03-25 | 2012-09-26 | 中国科学院微电子研究所 | 热稳定性镍基硅化物源漏MOSFETs及其制造方法 |
CN102693917B (zh) * | 2011-03-25 | 2015-07-08 | 中国科学院微电子研究所 | 热稳定性镍基硅化物源漏mosfets及其制造方法 |
CN103811349A (zh) * | 2012-11-06 | 2014-05-21 | 中国科学院微电子研究所 | 半导体结构及其制造方法 |
CN104217955A (zh) * | 2013-06-05 | 2014-12-17 | 中芯国际集成电路制造(上海)有限公司 | N型晶体管及其制作方法、互补金属氧化物半导体 |
CN104217955B (zh) * | 2013-06-05 | 2017-11-03 | 中芯国际集成电路制造(上海)有限公司 | N型晶体管及其制作方法、互补金属氧化物半导体 |
Also Published As
Publication number | Publication date |
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US20070281413A1 (en) | 2007-12-06 |
US7279758B1 (en) | 2007-10-09 |
TW200810119A (en) | 2008-02-16 |
CN101523608B (zh) | 2010-11-10 |
EP2036130A2 (en) | 2009-03-18 |
US7473608B2 (en) | 2009-01-06 |
WO2007140130A3 (en) | 2009-04-09 |
EP2036130A4 (en) | 2009-12-23 |
TWI459557B (zh) | 2014-11-01 |
EP2036130B1 (en) | 2011-08-17 |
WO2007140130A2 (en) | 2007-12-06 |
ATE521089T1 (de) | 2011-09-15 |
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