CN101556985B - 具有小型光学元件的高功率发光器封装 - Google Patents
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Abstract
本发明提供一种发光器,其包含:平的支撑面;位于所述平的支撑面上的固态光源;在所述平的支撑面上的反射层,所述反射层至少安置在所述固态光源和所述平的支撑面之间;位于所述平的支撑面上且围绕所述光源的密封件,该密封件能够根据温度变化而膨胀及收缩且仅受到对所述平的支撑面的粘着力的约束。
Description
本申请是国际申请日为2004年4月28日,申请号为200480017056.2(国际申请号为PCT/US2004/013256),名为“具有小型光学元件的高功率发光器封装”申请的分案申请。
技术领域
本发明涉及于发光器,更明确地说,涉及具有配置成可经受热应力之组件的发光器封装。
背景技术
发光器是一种重要的将电能转换成光的固态装置。一种此发光器为发光二极管(LED),其通常包含夹于两个反向掺杂的区域之间的半导电材料主动区域。当将一偏压施加于两掺杂区域时,空穴及电子被注入主动区域中并于此处重新结合而产生光。光可自该主动区域发射并穿过LED表面。
LED通常视其额定功率而分成若干等级。尽管对于不同等级没有标准范围,但是低功率LED的额定功率通常在0.1瓦特至0.3瓦特(或更低)范围内,而高功率LED通常在0.5瓦特至1.0瓦特(或更高)范围内。
低功率LED的常规封装通常包含一反射杯,其中LED安装于该反射杯底部。将阴极及阳极引线电耦接至该LED以提供功率。阴极引线可穿过该反射杯而阳极引线可经导线焊接。反射杯的主要功能在于将按某些方向所发射的光重新定向,以便控制LED之远场强度图形。该反射杯可包含一高反射抛光表面并可由板材冲压而成或以诸如铝(Al)或银(Ag)的金属电镀。
整个结构可封装于一透明而坚硬的密封件(诸如塑胶或环氧树脂)中。该密封件具有众多功能。其中一种功能在于为LED晶片提供气密封。另一种功能在于:光于密封件/空气介面处折射,以致于可使得密封件之外形成为一透镜以进一步控制LED之强度图形。
然而,这种封装配置之一缺点在于:LED晶片、反射杯及密封件通常各自具有不同的热膨胀系数。因此,在运作发热循环期间,它们以不同比率膨胀及收缩,此将对装置造成高机械应力。详言之,通常用于密封件的环氧树脂及硅树脂具有与金属或陶瓷的热膨胀系数完全不同的热膨胀系数。热膨胀系数失配亦可由制造流程(诸如环氧树脂固化过程)所产生的某些约束而加剧。另外,这种封装由于缺少良好的热性能而不能有效地使LED晶片散热。然而,由于该LED以低功率运作,所以其产生成的热量相对较低,以致于热膨胀系数的差异不会导致不能接受的失效率。
然而,通常高功率LED较大、使用较大的封装组件并产生较高的热量。因此,热膨胀系数失配对可靠性具有更大的影响,且若使用低功率LED类型封装,则封装组件之热膨胀系数差异可导致不能接受的失效率。最普遍的失效之一为密封件的断裂或破裂。
业已推广的高功率LED封装具有一散热器,其作为剩余组件的坚固平台,而该散热器由具有高导热性的材料(诸如金属或陶瓷)制成,此材料有助于将LED晶片中的热量辐射出去。一反射杯安装于该平台上,而LED晶片安置于杯的底部。LED晶片通过导线焊接与坚固的平台接触。反射杯、LED晶片及导线焊接封装于一具有环境保护作用的透光材料中。为了补偿封装组件的不同的热膨胀系数,该透光材料可包含诸如硅树脂的软凝胶。随着不同组件在热循环过程中膨胀及收缩,软凝胶易变形并补偿不同的热膨胀系数。
然而,软凝胶不如塑胶、环氧树脂及玻璃坚固,且在没有涂层或覆盖层作为气密封接的情况下不能用于某些恶劣环境中,因此会增加LED制造过程的复杂性。软凝胶往往会吸水,此可缩短LED使用寿命。也较难使软凝胶形成可控制LED封装之发射图形的形状。
业已介绍的其他高功率LED封装,它们采用硬环氧树脂密封件,而此种装置并不使用密封件内的一反射杯。相反,在散热器上包含一第二区域,该第二区域的一段经冲压、模压或蚀刻以形成一可涂覆反射材料的凹部。随后,把LED晶片放置在凹部的底部并与其接触。再用硬环氧树脂或硅树脂填充该凹部,从而覆盖LED及所有焊线。此配置会减少(但不能消除)环氧树脂或硅树脂密封件的断裂及破裂。此配置亦可遇到另一问题,即环氧树脂或硅树脂密封件于LED热循环过程中会分层并自凹部表面剥落。
Carey等人的美国专利第6,274,924号揭示了另一高功率LED封装,其包含一插入在一插入式模压引线框中的散热块。散热块可包含一反射杯,而LED晶片及导热基台配置于该杯底部。金属引线与散热块电绝缘及热隔离。藉由把一热塑性透镜安装在该散热块上来添加一光学透镜。该透镜可模压成形要给LED与该透镜内表面之间的软密封件留出空间。该发明要求在高功率条件下可靠地运作,但是其复杂、制造困难并且昂贵。热塑性透镜亦不能经受通常用于将LED焊接在一印刷电路板上的过程中的高温。
发明内容
本发明的目的在于提供LED封装,其特别适用于供高功率LED使用且被配置成可减少由于封装组件的热膨胀系数的差异所导致的LED封装失效。本LED封装简单、适应性强且坚固。
根据本发明的发光器的一实施例包括一基本上平的支撑面、一安置在所述支撑面上的光源及一安置在所述支撑面上的密封件。所述密封件围绕着所述光源并能根据温度变化而膨胀及收缩且仅受到对所述平支撑面的粘着力的约束。
根据本发明之发光器的另一实施例包括一散热器及一光源,所述光源以与所述散热器的一基本上平的表面热接触的方式安置。散热器为所述光源提供支撑而一密封件围绕所述光源安置,所述密封件能根据温度变化而膨胀及/或收缩且仅受到对所述平表面的粘着力的约束。将一第一反射元件安置成反射来自光源的光,所述反射元件与散热器及密封件中的至少一个成为一体。
根据本发明的光学显示器的一实施例包括一具有一基本上平的表面的散热器。多个发光器安置在所述平表面上,每一发光器包括一以与所述散热器热接触的方式安置的光源。一密封件安置在所述散热器上以围绕光源,所述密封件能根据温度变化而膨胀及收缩且仅受到对所述平表面的粘着力的约束。每一发光器包括至少一个反射元件,其安置在所述散热器和/或密封件上以提高显示器的发光效率。
发光器的制造方法的一实施例包含:提供一基本上平的支撑面并把一光源安置在所述基本上平的支撑面上。把一密封件安置在所述支撑面上及位于所述光源上方,以致于所述密封件可随温度变化而膨胀及收缩且仅受到对所述平表面的粘着力的约束。
以下,将结合附图对本发明作详细地叙述,由此本领域技术人员应当清楚本发明的这些及其他一些特征和优点。
附图说明
图1为根据本发明的一发光器的简化剖视图;
图2为根据本发明的一发光器的另一实施例的简化剖视图;
图3为根据本发明的一发光器的又一实施例的简化剖视图,其具有一成形透镜;
图4为根据本发明的一发光器的再一实施例的简化剖视图,其在成形透镜上具有一反射表面;
图5为根据本发明的一发光器的另又一实施例的简化剖视图,其具有一子弹形透镜;
图6为根据本发明的一发光器的再又一实施例的简化剖视图,其具有一凹形透镜;
图7为根据本发明的一发光器的还又一实施例的简化剖视图,其具有一蘑菇形透镜;
图8为根据本发明的一发光器的另外一实施例的简化剖视图,其具有一圆球形透镜;以及
图9为一简化流程图,其说明一种根据本发明的一发光器的制造方法。
具体实施方式
图1所示为一发光器10,其是根据本发明的一实施例。发光器10包含一散热器12,而一光源14以与所述散热器12热接触的方式安理置在其上。散热器12提供一用于保持光源14的支撑结构且至少部分由高导热性材料制成以促进热量自光源14散发。较佳散热器由高导热性材料制成,诸如铜、铝、氮化铝(AlN)、氧化铝(AlO)、硅、碳化硅或其组合物。
光源14包括一LED,但是其亦可包含其他发光器,尤其诸如固态激光器、激光二极管或有机发光二极管。由第一及第二焊线16、18为光源14提供电力同时于光源14上施加一偏压,在所示的实施例中,焊线把一偏压施加于LED光源的反向掺杂层两端,以使光源发光。在根据本发明的其他实施例中,仅可使用一条焊线,而光源14亦经由散热器12接触。在另外的实施例中,光源14仅经由散热器12接触。
在设计成为单一光源或在显示器中发光的系统中,可包含根据本发明之发光器。根据本发明之发光器亦可包含单一光源或发射相同或不同波长之光的光源的阵列。为简单及易于论述起见,发光器10及以下附图中的发光器均以一个光源来表示。然而,应了解,根据本发明的发光器可以许多不同方式配置。
透明密封物20安置成围绕光源14,且其用于封装及气密封接光源14及焊线16、18。密封件20通常安置在散热器12的顶表面上。密封件20可由许多不同的硬且透光的材料(诸如环氧树脂、硅树脂、玻璃或塑胶)制成,且其可是一预模压透镜或直接在光源14上形成。可使用诸如注射模塑之技术来制造预模塑密封物或透镜,然后将其结合至散热器12。
散热器12亦可包含一在与光源14相同表面上的反射层22,所述反射层22至少覆盖基本上所有未由光源14覆盖的表面。在所示的实施例中,反射层22覆盖整个表面,以致于所述反射层的部分夹在光源14与散热器12之间。光源14全向发光,而光路径1、2、3、4及5则代表来自光源的少数可能存在的光路径。光路径1、2及3自光源14伸出并穿过密封件20。光亦可沿自光源14伸出至反射层22并穿过密封件20的光路径4及5流动。反射层22可反射来自光源14的光以提高发光器10之光效率。反射层22可包括许多以反射感兴趣的波长的反射材料,诸如铝、银或其组合物。
发光器10具有许多优点,其中一个在于其不太复杂,且因而其成本低于普通的装置。降低复杂性的一种方式系藉由将反射层22与散热器12结合以避免需要有一种反射结构来分隔密封件20及散热器12,这为一简化的制造过程创造条件。
由于反射功能与发光器10中包含的其他组件相整合,所以热应力亦降低了。因此,以不同的比率相互膨胀及收缩的组件较少。因此,光源14可更可靠地以较高功率运作,而且较高温度使得发光器10失效的风险变小。另一失效原因可为密封件20断裂或破裂,这与所使用的不同材料之间的热膨胀系数失配相关。然而,发光器10之配置可降低这类事件发生的可能性。密封件20与散热器12之间的表面是平的,以致于密封件20仅在一表面上受到约束。这使焊线16及/或18上施加的应力较小,而这种应力可导致焊线断开或松动并减少发光器10的使用寿命。
密封件20可包含硬且熔点高的材料(诸如玻璃)以提供受气密封接的封装,因为与这些材料相关的固化处理及温度循环已不再是问题。发光器10亦在材料的选择上提供更大灵活性,这些材料由于可粘合所以可用于密封件20及散热器12。因此,在发光器热循环过程中密封件20分层并自反射层22剥落的可能性降低了。
另一优点在于:发光器10具有较小的占用面积,以致于一封装阵列可相互紧靠地安置在一起。这一特征在光显示器中是有用的,在显示器中通常需要将封装相互紧靠地安置在一阵列中以提高清晰度及显示品质。
图2至8所示为发光器,其是根据本发明的附加实施例。应注意的是,揭示的剩余部分中所示的发光器包含一些与图1中所示的组件相同的组件且使用相同的编号,应理解为以上对发光器10的讨论同样等同地适用于图2至8中所论述的发光器。
图2所示为发光器30,其是根据本发明的另一实施例。发光器30包含一散热器12并可包含一反射层22。光源14置于反射层22上且安置一密封件40以封装并密封光源14。密封件40围绕其底部成形以提供一成角度的表面42,所述表面42藉由全内反射反射自光源14发射的侧向光。
光路径6、7表示来自光源14的两条可能的光路径,两者皆投射至表面42。光路径6及7经表面42分别可藉由全内反射沿光路径8及9朝密封件40的顶部反射。这可减少自密封件40侧面发射的光并增加了自其顶部发射的光。结果,发光器30可产生更多具有更佳发光效率的聚焦光。应注意的是,自光源14发射的光亦可由反射层22反射并穿过密封件40(直接或间接地离开表面42)以进一步提高发光效率。发光器30包含上述发光器10的所有特征,并且具有更多聚焦光及更佳的光效率等优点。
图3所示为发光器50,其是根据本发明的又一实施例。其类似于图2中所示的发光器30。发光器50包含散热器12,且散热器12上具有一反射层22。光源14置于反射层22上且安置一密封件60以围绕光源14并提供气密封。密封件60亦包括一成角度的表面42,且于成角度的表面42上施加一反射层64。邻近第二反射层64及反射层22安置支撑区域49。
第二反射层64反射大多数或所有投射到成角度的表面42上的光,包含未经受全内反射而要不然将穿过成角度的表面42的光。这使得来自光源14的光进一步朝向密封件60顶部聚焦并藉由增加发光量来提高光效率。第二反射层64可由具有不同反射率的不同材料制成,诸如银、铝、氧化钛(TiO)、白树脂或其组合物。可使用许多不同方法(诸如涂布、喷镀或沉积)来施加第二反射层64,且亦可在把密封件60安置在光源14上方之前或之后施加第二反射层64。不透光的层64的另一优点在于:在不降低发光器50之光效率的情况下,使光阻挡区能被包括为机械支撑及环境保护创造条件。应选择区域49所用的材料,以致于其在热循环中不会约束密封件60。
图4所示为发光器70,其是根据本发明之再一实施例。其类似于图1中所示的发光器10。发光器70包含散热器12、光源14及反射层22。发光器70亦包括一密封件80,其是一底部具有一空腔81的预成型透镜。与上述密封件一样,透镜80可由环氧树脂、硅树脂、玻璃或塑胶制成并可使用诸如注射成型的方法来制造。密封件80装在散热器12之顶表面上位于光源14上方,而光源14及焊线16、18置于空腔81中。结合材料82填充空腔81中的空间并将透镜80固定在散热器12上。可使用不同类型的密封件,只要其大小可装在散热器12上同时为光源14、焊线16与18及结合材料82提供一空腔。
结合材料82可包含不同的材料,诸如环氧树脂、胶或硅树脂胶。结合材料82的折射率最好与密封件80相同以使两种材料间的反射达到最小并可被选择以获得所要的发光效率。在将密封件80置于光源14上方之前,先将材料82安置于空腔81中,或者先将密封件80安置在适当位置,再经由密封件80或经由散热器12中一孔(图中未示)把材料82注入。所述孔随后可用由树脂或类似材料制成的插塞加以密封。
与发光器10相比,这种配置的优点还在于可安装在光源14及散热器12上方的密封件在类型及形状上均具有更大灵活性。可使用不同类型的透镜,只要其具有配合散热器12的尺寸同时为光源14、焊线16与18及结合材料82提供一空腔。若硅凝胶作为材料82,则其可补偿不同材料的热膨胀系数的差异。
图5所示为发光器90,其是根据本发明的又一实施例。发光器90包含散热器12、光源14及反射层22。发光器90亦包含一″子弹形″硬密封件100,其可为预成型透镜或置于光源14上方并成形的环氧树脂。密封件100的形状要挑选成:当光在表面121处穿过密封件100时,可将沿光路径1、3、4及5的光折射到发光器90的顶部。这种光折射有助使来自光源14的光聚焦。正好以90°角(即,沿光路径2)命中密封件100的表面的光将不会折射。
图6所示为发光器110,其是根据本发明的再又一实施例。其同样包含散热器12、光源14及反射层22。发光器110亦包含一″凹″形密封件120,其更为有效地把光在内部反射到发光器110的顶部,并可更为有效地将穿过密封件120的光折射到发光器110的顶部。密封件120包含一成角度的表面122,其以提高密封件120的聚焦能力及发光器110的发光效率的方式成形。可选择表面122的角度及形状,以在光聚焦中获得所要求的增益并减少任何由全内反射导致的损耗。
图7所示为发光器130,其是根据本发明的还又一实施例。其包括散热器12、光源14、焊线16与18及反射层22。发光器130亦包括一蘑菇形密封件140,其具有圆顶142及成角度的茎干(stem)146。茎干146可由一第二反射层64覆盖,以致于来自光源14并沿光路径6及7命中茎干146的光分别沿光路径8及9反射到圆顶142。由于损耗于全内反射的光较少,所以这种配置亦可提供聚焦光且更为有效。
图8所示为发光器150,其是根据本发明的另外一实施例。其包含散热器12、光源14及反射层22。发光器150亦包含一球形密封件160,所述球形密封件160亦可于其下半球上包含反射区域64以将沿光路径6及7的光分别沿光路径8及9反射到密封件160的顶部。由于密封件160及反射区域64,所以这种配置同样提供聚焦光并具有较少的全内反射损耗。同样应理解为,所述密封件可为根据本发明的许多其他具体形状。
图9所示为一种流程图200,其是根据本发明的发光器的制造方法的一实施例。该方法包含:步骤201,其提供一具有至少一平表面的散热器区域,所述表面上具有一反射层;以及步骤202,提供置于至少一平表面上的一光源。步骤203包含提供一置于散热器区域的平表面上且位于光源上方的密封件。由于是平的,所以所述密封件随温度变化的膨胀及收缩仅受到所述平表面的约束。
密封件可安置得使光源气密封接,且所述气密封接随温度变化仍可保持。密封件可安置得使所述密封件与光源的相对位置随温度变化仍保持不变。当温度变化时,若除了密封件推拆以外(即一3D反射器结构)没有别的办法,则该相对位置将保持不变。
一可选择的步骤204包括:使邻近散热器区域的密封件表面成一角度,以藉由使全内反射光及折射光射向发光器顶部来提高发光器之效率。
一可选择的步骤205包括提供一置于成角度的表面上的第二反射元件以提高发光器之发光效率。所述第二反射元件可藉由使用涂布、喷镀及沉积中之一种方法来形成。一可选择的步骤207可包括邻近支撑面及密封件的一底部安置一阻挡区。所述阻挡区可形成对光源更好的密封。应注意,流程图200中所示的步骤可以按不同次序执行,且不同的步骤可用于根据本发明的方法。
尽管业已参照本发明的某些较佳配置对本发明进行相当详细的叙述,但是其他改型也是可能的。上述透镜可具有许多不同的形状并可由许多不同材料制成。每一上述光源可进一步包括一基座架以防静电放电。在上述每一实施例中,散热器可蚀刻出一孔来接纳光源,以致于光源不会超出散热器的顶表面。随后,密封件可具有一平底部以安装在散热器上,并位于光源上方。
因此,本文所述本发明的实施例是例示性的,且不难想象有许多改型、变型及重新配置都可达到实质上相等的结果,所有这些改型、变型及重新配置均应包含在所附的权利要求书中所限定的本发明的精神及范围之内。
Claims (7)
1.一种发光器,包括:
平的支撑面;
位于所述平的支撑面上的固态光源;
在所述平的支撑面上的反射层,其中所述反射层的部分在所述固态光源和所述平的支撑面之间,使得所述光源直接位于所述反射层上;以及
位于所述平的支撑面上且围绕所述光源的密封件,该密封件能够根据温度变化而膨胀及收缩;
其中,所述密封件围绕其底部成形以提供一成角度的表面,所述成角度的表面反射自所述光源发射的一些光;以及
施加至所述密封件的所述成角度的表面的反射元件;
邻近所述反射元件并且与所述反射元件不同的支撑区域。
2.如权利要求1所述发光器,其特征在于,所述光源的一表面邻近所述支撑面,所述密封件覆盖所述光源的所有其他表面。
3.如权利要求1所述发光器,其特征在于,所述反射层对由所述光源发射的光是反射的。
4.如权利要求1所述发光器,其特征在于,所述平的支撑面为散热器,所述散热器包括导热的散热器区域以驱散来自所述光源的热量。
5.如权利要求4所述发光器,其特征在于,所述散热器包含以下至少一种:铜、铝、氮化铝、氧化铝、硅、碳化硅、或其组合。
6.如权利要求1所述发光器,其特征在于,所述光源包括发光二极管。
7.如权利要求1所述发光器,其特征在于,所述反射层包含以下至少一种:银、铝、或其组合。
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Also Published As
Publication number | Publication date |
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EP2264798A1 (en) | 2010-12-22 |
CN101556985A (zh) | 2009-10-14 |
US20040227149A1 (en) | 2004-11-18 |
TW201306326A (zh) | 2013-02-01 |
JP2006525682A (ja) | 2006-11-09 |
TWI484665B (zh) | 2015-05-11 |
TW200501458A (en) | 2005-01-01 |
KR101148332B1 (ko) | 2012-05-25 |
JP2012064962A (ja) | 2012-03-29 |
EP1620903A2 (en) | 2006-02-01 |
WO2004100279A3 (en) | 2005-12-01 |
CN100502062C (zh) | 2009-06-17 |
EP2270887B1 (en) | 2020-01-22 |
US9666772B2 (en) | 2017-05-30 |
WO2004100279A2 (en) | 2004-11-18 |
CA2523544A1 (en) | 2004-11-18 |
CN1809934A (zh) | 2006-07-26 |
KR20060015543A (ko) | 2006-02-17 |
EP2264798B1 (en) | 2020-10-14 |
EP2270887A1 (en) | 2011-01-05 |
TWI487149B (zh) | 2015-06-01 |
EP1620903B1 (en) | 2017-08-16 |
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