CN101645295A - 使用分数参考电压来访问存储器 - Google Patents
使用分数参考电压来访问存储器 Download PDFInfo
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- CN101645295A CN101645295A CN200910159261.7A CN200910159261A CN101645295A CN 101645295 A CN101645295 A CN 101645295A CN 200910159261 A CN200910159261 A CN 200910159261A CN 101645295 A CN101645295 A CN 101645295A
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- voltage
- storage unit
- bit
- value
- logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
Abstract
Description
与Vx比较 | Vth<Vx | Vth<Vx | Vth>=Vx | Vth>=Vx |
与V1-x比较 | Vth<V1-x | Vth>=V1-x | Vth<V1-x | Vth>=V1-x |
输出Y | (V11+V10)/2 | 不可能 | (Vx+V1-x)/2 | (V00+V01)/2 |
比较结果 | Vth<V’xVth<V’1-xVth<V”xVth<V”1-x | Vth>=V’xVth<V’1-xVth<V”xVth<V”1-x | Vth>=V’xVth>=V’1-xVth<V”xVth<V”1-x | Vth>=V’xVth>=V’1-xVth>=V”xVth<V”1-x | Vth>=V’xVth>=V’1-xVth>=V”xVth>=V”1-x |
输出Y | V11 | (V’x+V’1-x)/2 | (V10+V00)/2 | (V”x+V”1-x)/2 | V01 |
Claims (20)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US8741708P | 2008-08-08 | 2008-08-08 | |
US61/087,417 | 2008-08-08 | ||
US12/535,987 | 2009-08-05 | ||
US12/535,987 US8406048B2 (en) | 2008-08-08 | 2009-08-05 | Accessing memory using fractional reference voltages |
Publications (2)
Publication Number | Publication Date |
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CN101645295A true CN101645295A (zh) | 2010-02-10 |
CN101645295B CN101645295B (zh) | 2014-10-29 |
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Application Number | Title | Priority Date | Filing Date |
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CN200910159261.7A Active CN101645295B (zh) | 2008-08-08 | 2009-08-10 | 使用分数参考电压来访问存储器 |
Country Status (3)
Country | Link |
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US (2) | US8406048B2 (zh) |
JP (2) | JP5519209B2 (zh) |
CN (1) | CN101645295B (zh) |
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CN104756194A (zh) * | 2012-10-31 | 2015-07-01 | 英特尔公司 | 基于估计概率密度函数的中心读取参考电压确定 |
CN106843771A (zh) * | 2017-01-26 | 2017-06-13 | 合肥兆芯电子有限公司 | 存储器重读方法、存储器控制电路单元及存储器存储装置 |
CN108761170A (zh) * | 2018-05-18 | 2018-11-06 | 广东工业大学 | 一种nand参考电压测量方法、系统、设备及存储介质 |
CN109669806A (zh) * | 2018-12-24 | 2019-04-23 | 西南交通大学 | 一种用于nand闪存的译码似然比软值的生成方法和装置 |
WO2021189177A1 (zh) * | 2020-03-23 | 2021-09-30 | 中国科学院微电子研究所 | Ldpc软译码方法、存储器及电子设备 |
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US20140359381A1 (en) * | 2011-11-02 | 2014-12-04 | The University Of Tokyo | Memory controller and data storage device |
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Cited By (25)
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US9411681B2 (en) | 2010-12-07 | 2016-08-09 | Silicon Motion Inc. | Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory |
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CN102800351A (zh) * | 2011-05-23 | 2012-11-28 | 马维尔国际贸易有限公司 | 用于生成nand闪存中的软信息的系统和方法 |
CN104756194A (zh) * | 2012-10-31 | 2015-07-01 | 英特尔公司 | 基于估计概率密度函数的中心读取参考电压确定 |
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CN106843771A (zh) * | 2017-01-26 | 2017-06-13 | 合肥兆芯电子有限公司 | 存储器重读方法、存储器控制电路单元及存储器存储装置 |
CN106843771B (zh) * | 2017-01-26 | 2019-11-19 | 合肥兆芯电子有限公司 | 存储器重读方法、存储器控制电路单元及存储器存储装置 |
CN108761170B (zh) * | 2018-05-18 | 2020-08-11 | 广东工业大学 | 一种nand参考电压测量方法、系统、设备及存储介质 |
CN108761170A (zh) * | 2018-05-18 | 2018-11-06 | 广东工业大学 | 一种nand参考电压测量方法、系统、设备及存储介质 |
CN109669806B (zh) * | 2018-12-24 | 2020-06-30 | 西南交通大学 | 一种用于nand闪存的译码似然比软值的生成方法和装置 |
CN109669806A (zh) * | 2018-12-24 | 2019-04-23 | 西南交通大学 | 一种用于nand闪存的译码似然比软值的生成方法和装置 |
WO2021189177A1 (zh) * | 2020-03-23 | 2021-09-30 | 中国科学院微电子研究所 | Ldpc软译码方法、存储器及电子设备 |
Also Published As
Publication number | Publication date |
---|---|
US8867268B2 (en) | 2014-10-21 |
CN101645295B (zh) | 2014-10-29 |
US20130229869A1 (en) | 2013-09-05 |
US20100034018A1 (en) | 2010-02-11 |
JP2010123236A (ja) | 2010-06-03 |
JP5519209B2 (ja) | 2014-06-11 |
JP2014160534A (ja) | 2014-09-04 |
US8406048B2 (en) | 2013-03-26 |
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