CN101657562A - Sputtering apparatus and sputtering method - Google Patents
Sputtering apparatus and sputtering method Download PDFInfo
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- CN101657562A CN101657562A CN200880011831A CN200880011831A CN101657562A CN 101657562 A CN101657562 A CN 101657562A CN 200880011831 A CN200880011831 A CN 200880011831A CN 200880011831 A CN200880011831 A CN 200880011831A CN 101657562 A CN101657562 A CN 101657562A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/228—Gas flow assisted PVD deposition
Abstract
Film qualities, such as film thickness distribution and specific resistance value, are substantially made uniform over the entire surface of a processing substrate for forming a prescribed thin film by reactive sputtering. A sputtering apparatus is provided with a plurality of targets (31a-31d) arranged in parallel at prescribed intervals in a sputtering chamber in a vacuum chamber (11); sputtering power supplies (E1, E2) for supplying each target with power; and gas introducing means (6a, 6b) for introducing a sputtering gas and a reaction gas into the sputtering chamber. The gas introducingmeans (6b) for introducing the reaction gas has at least one gas pipe (61b) extending in a direction wherein the targets are arranged in parallel. The gas pipe is arranged on the rear side of the targets by being spaced apart from the targets which are arranged in parallel, and is provided with a jetting port (610) for jetting the reaction gas toward the targets.
Description
Technical field
The sputtering apparatus and the jet-plating method that use when the present invention relates on the treatment substrate surface, form the regulation film.
Background technology
In the sputtering apparatus of magnetron sputter reactor mode, (an opposite side with sputter face) disposed magnet assemblies at negative electrode target rear, it constitutes by alternately changing polar polylith magnet, the secondary electron that produces when catching ionized electronics in negative electrode target the place ahead and sputter by this magnet assemblies tunnel shape magnetic line of force that (sputter face one side) forms in negative electrode target the place ahead, the electron density in negative electrode target the place ahead can be improved, plasma density can be improved with the collision probability that imports the rare gas molecule in the vacuum vessel by improving these electronics.Therefore have advantages such as to improve film forming speed, often be used on the treatment substrate surface, form the regulation film, also on the large-area treatment substrates such as glass substrate of FPD manufacturing usefulness, obtained more utilization in recent years.
For having: in vacuum vessel with on the treatment substrate position in opposite directions, be set up in parallel polylith negative electrode target in efficient film forming method on the large-area treatment substrate, AC power is set, alternately change polarity ground impressed voltage with the frequency of stipulating for the every anticathode target in the negative electrode target that is set up in parallel, make each negative electrode target alternately switch to anode electrode, cathode electrode, produce glow discharge formation plasma atmosphere between anode electrode and cathode electrode by making, make each negative electrode target sputter (patent documentation 1).
When on the treatment substrate surface, forming the regulation film with above-mentioned sputtering apparatus, not only should be on whole of treatment substrate even film forming, also need be by together importing reactant gasess such as oxygen, nitrogen with sputter gas when carrying out reactive sputter, prevent biasing importing because of reactant gases, in the treatment substrate face, produce reactive patch, and in the treatment substrate face, form membranous inequality such as resistivity value.For the above reasons, side along the length direction of negative electrode target in each the negative electrode target space to each other that is set up in parallel is provided with the air-supply duct that imports sputter gas and reactant gases, utilize air-supply duct in each negative electrode target space to each other to the treatment substrate jet flow stream.
Patent documentation:
Patent documentation 1: the spy opens 2005-290550 communique (with reference to claims)
Patent documentation 2: the spy opens 2004-91927 communique (with reference to Fig. 1 and Fig. 4)
Summary of the invention
Yet, when by with treatment substrate position in opposite directions on be set up in parallel a plurality of negative electrode targets and constitute under the situation of sputtering apparatuss, can't discharge sputtering particle from each negative electrode target each space to each other during sputter.Want on the entire treatment substrate surface, to obtain uniform film thickness distribution for this reason, preferably this space that can not discharge sputtering particle is dwindled as far as possible.Yet as mentioned above, when being provided with under the situation of air-supply duct along its length direction one side in each negative electrode target space to each other, the degree of dwindling in this space is limited.In addition, be difficult to dispose the air-supply duct with predetermined outside diameter in so little space, because apparatus structure is complicated, its fitting operation is difficulty very.
For this reason, first problem of the present invention puts forward just in view of the above problems, purpose is to provide a kind of sputtering apparatus, and it is simple in structure, and the air-supply duct stringing is easy, in addition, can making whole of treatment substrate, to go up film thickness distribution and resistivity value etc. membranous roughly even.In addition, second problem of the present invention is to provide a kind of jet-plating method, and it is forming under the situation of regulation film by reactive sputter, and it is membranous roughly even to make whole of treatment substrate go up film thickness distribution and resistivity value etc.
In order to solve above-mentioned problem, the described sputtering apparatus of claim 1 is characterized in that: have a plurality of negative electrode targets of being set up in parallel with predetermined distance in sputtering chamber, can give sputter power supply that each negative electrode target provides electric power, can import means to the gas that sputtering chamber import sputter gas and reactant gases; The gas means that import that previous reaction gas imported sputtering chamber have 1 air-supply duct that direction is extended that is set up in parallel towards each negative electrode target at least; This air-supply duct has the jet orifice that sprays reactant gases to the negative electrode target when the back side of each the negative electrode target that is set up in parallel one side and each negative electrode target dispose at a certain distance.
If adopt the present invention, owing to be that at least 1 air-supply duct and each the negative electrode target that are set up in parallel the direction extension to each negative electrode target are disposed at a certain distance, thereby one spray reactant gases from the jet orifice that air-supply duct forms, this reactant gases promptly at the space internal diffusion of each negative electrode back face of target one side, offers treatment substrate by negative electrode target space to each other then.Be that available simple structure prevents that reactant gases biasing property ground from importing treatment substrate, can prevent that the formation reaction patch makes the membranous appearance such as resistivity value in the treatment substrate face uneven in the treatment substrate face like this.
In addition, by air-supply duct being configured in the rear of each negative electrode target, can dwindling to greatest extent each negative electrode target space to each other that can not discharge sputtering particle, on whole of treatment substrate, form the uniform film of film thickness distribution.With the exception of this, the device that air-supply duct is set with side at mutual its length direction of upper edge, space of negative electrode target is compared, and its device constitutes simple, in addition, owing to arrange that along the direction that is set up in parallel of each negative electrode target air-supply duct gets final product, and thereby its fitting operation is easy.
Aforementioned sputter power supply is an AC power, it gives in a plurality of negative electrode targets that are set up in parallel each right, alternately change polarity ground impressed voltage with assigned frequency, if be set at by making each negative electrode target alternately switch to anode electrode, cathode electrode, between anode electrode and cathode electrode, produce glow discharge and form the device that plasma atmosphere makes each negative electrode target sputter, owing to need not in each negative electrode target space to each other, the object of structural parts such as anode and shielding case and so on to be set, thereby can dwindle the space that can't discharge sputtering particle to greatest extent.
And between the aforementioned negative electrode target and air-supply duct that is set up in parallel, the place ahead that also can be arranged on each negative electrode target forms the magnet assemblies of tunnel shape magnetic line of force.
In the case, in order to improve the service efficiency of negative electrode target, preferably configuration makes the driving means of aforementioned magnet assemblies along the parallel back and forth movement of negative electrode back face of target.
In addition, in order to solve above-mentioned problem, the described jet-plating method of claim 5, by make in the sputtering chamber every predetermined distance be set up in parallel with the locational in opposite directions plural piece negative electrode target of treatment substrate in paired negative electrode target alternately change polarity with the frequency of regulation and add voltage of alternating current, when importing sputter gas, each negative electrode target is alternately switched to anode electrode, cathode electrode, make between anode electrode and cathode electrode and produce glow discharge, form plasma atmosphere, in the time of each negative electrode target of sputter, import reactant gases, among the jet-plating method of the film that forms regulation on the treatment substrate surface, it is characterized in that: make previous reaction gas at first after the space internal diffusion of negative electrode back face of target one side, offer treatment substrate by each negative electrode target gap to each other again.
The invention effect
As mentioned above, sputtering apparatus of the present invention is simple in structure, and the fitting operation of air-supply duct is easy, in addition, also has following effect: can form membranous roughly uniform film such as film thickness distribution and resistivity value on whole of treatment substrate.Jet-plating method of the present invention since reactant gases can biasing property ground import treatment substrate, thereby have following effect: can on whole of treatment substrate, form membranous roughly uniform film such as film thickness distribution and resistivity value.
Embodiment
Describe below with reference to Fig. 1, the 1st, the sputtering apparatus of Magnetron Mode of the present invention (hereinafter referred to as " sputtering apparatus ").Sputtering apparatus 1 is online device, has the vacuum vessel 11 that constitutes sputtering chamber, and it can pass through rotary pump, turbomolecular pump equal vacuum exhaust means (not shown) keeps the specified vacuum degree, is provided with substrate on the top of vacuum vessel 11 and transmits means 2.This substrate transmits means 2 and has known structure, for example has the bearing 21 that treatment substrate S can be installed, and drives driving means by intermittence, treatment substrate S can be sent to successively and negative electrode target described later position in opposite directions.At the downside of vacuum vessel 11, dispose cathode electrode C.
The cathode electrode C that present embodiment relates to has 4 negative electrode target 31a, 31b, 31c, the 31d that disposes in opposite directions with treatment substrate S.Each negative electrode target 31a, 31b, 31c, 31d use Al, Ti, Mo and ITO etc. corresponding with preparation composition of film forming film on treatment substrate S surface, are made into the shape that for example roughly is rectangular parallelepiped (being rectangle during top view) with known method.Each negative electrode target 31a, 31b, 31c, 31d cool off on the backboard 32 of negative electrode target 31a, 31b, 31c, 31d during being welded on sputter by welding materials such as indium, tin, are installed on the framework of cathode electrode C through not shown insulating material with the form that is floating state in vacuum vessel 11.
In addition, cathode electrode C is respectively equipped with magnet assemblies 4 in separately the back side one side of negative electrode target 31a, 31b, 31c, 31d (side opposite with sputter face 310, Fig. 1 is a downside).Each magnet assemblies 4 of same structure has the supporting plate 41 that is parallel to each negative electrode target 31a, 31b, 31c, 31d setting.This supporting plate 41 is narrow by the banner that is than each negative electrode target 31a, 31b, 31c, 31d, the rectangular flat plate of the form of extending towards both sides along the length direction of negative electrode target 31a, 31b, 31c, 31d constitutes, with the magneticsubstance making of the adsorptive power of scalable magnet.On supporting plate 41, be provided with bar-shaped central magnet 42 that is configured on the central part and the peripheral magnet 43 that disposes along supporting plate 41 peripheries.Volume settings when in the case, central magnet 42 being scaled with magnetization is that the volume sum when being scaled with magnetization with peripheral magnet 42 equates (peripheral magnet: centring magnet: peripheral magnet=1: 2: 1).
Can form equilibrated closed loop tunnel shape magnetic line of force respectively in the place ahead of each negative electrode target 31a, 31b, 31c, 31d (face 310 1 sides are penetrated in survey) like this, because it can catch the secondary electron that negative electrode target 31a, 31b, 31c, the ionized electronics in 31d the place ahead and sputter produce, thereby can improve plasma density by improving the electron density in each negative electrode target 31a, 31b, 31c, 31d the place ahead.
Each magnet assemblies 4 is connected on the drive shaft 51 of the driving means 5 that is made of motor, cylinder etc., and along the whole back and forth movement in parallel between two positions that are set up in parallel direction of negative electrode target 31a, 31b, 31c, 31d and constant speed ground.The whole face of each negative electrode target 31a, 31b, 31c, 31d is corroded uniformly.In addition, two formations adjacent one another are among each negative electrode target 31a, 31b, 31c, the 31d are a pair of, and paired separately each negative electrode target 31a, 31b and 31c, 31d link to each other with output cable K1, K2 from AC power E1, E2 respectively.And (1～400kHz) alternately changes polarity ground impressed voltage with the frequency of regulation can to give paired negative electrode target 31a, 31b or 31c, 31d by AC power E1, E2.
AC power E1, E2 have known structure, for example have following formation: power feeding section, it can provide electric power; Oscillating portion, it alternately changes polarity ground to each negative electrode target 31a, 31b or 31c, 31d output voltage by the frequency with regulation.Though about the voltage waveform from AC power E1, E2 output is sinusoidal wave, be not limited thereto, for example also can be square wave.
In addition, be provided with the gas importing means 6a of the sputter gas of formation such as the rare gas that imports Ar in the vacuum vessel 11.Gas imports means 6a and has the air-supply duct 61a that is installed on vacuum vessel 11 sidewalls, and air-supply duct 61a links to each other with source of the gas 63a through flow director 62a.Sputter gas in air-supply duct 61a is imported into vacuum vessel 11 can by the 1st and the 2nd ground shield 33a, 33b to each other and the 2nd ground shield 33b and the substrate space of transmitting between the means 2 be provided in the space in negative electrode target 31a, 31b, 31c, 31d the place ahead.
And, utilize substrate pass means 2 treatment substrate S be sent to paired negative electrode target 31a, 31b, 31c, 31d position in opposite directions on, behind the importing sputter gas as indicated above, add voltage of alternating current respectively for paired negative electrode target 31a, 31b and 31c, 31d through AC power E1, E2, each negative electrode target 31a, 31b and 31c, 31d are alternately switched to anode electrode, cathode electrode, produce glow discharge formation plasma atmosphere between anode electrode and cathode electrode by making.So, be in ion in the plasma atmosphere to a side's who becomes cathode electrode negative electrode target 31a, 31b, 31c, 31d accelerating impact, the negative electrode target atom is sputtered, and adheres to and is deposited on treatment substrate S surface, can form the film of regulation on the treatment substrate surface.
On the other hand, when carrying out reactive sputter with above-mentioned sputtering apparatus 1, reactant gases such as oxygen, nitrogen together imports with sputter gas, but because if biasing property ground imports vacuum vessel 11 with reactant gases, then can in treatment substrate S surface, form patch, thereby membranous inequality such as the coefficient value that need prevent to have a resistance in the treatment substrate face S.
In the present embodiment, with with each negative electrode target 31a, 31b, 31c, 31d mode at a certain distance, be set up in parallel being set up in parallel on the direction at the back side of each magnet assemblies 4 side, negative electrode target 31a, 31b, 31c, 31d, 1 air-supply duct 61b that each negative electrode pinwheel extends is passed in setting, the end of this air-supply duct 61b links to each other with the source of the gas 63b of oxygen isoreactivity gas through flow director 62b, thereby constitutes the gas importing means 6b that reactant gases is used.
Air-supply duct 61b for example can be
The stainless steel tube of～10mm diameter, its norminal size equate with the integral width of the negative electrode target 31a that is set up in parallel, 31b, 31c, 31d or are slightly long, form three jet orifices 610 every predetermined distance at it on the face of negative electrode target one side.So, jet orifice 610 ejections that reactant gases one forms from air-supply duct 61b, reactant gases at first at the space internal diffusion of each negative electrode target 31a, 31b, 31c, the 31d back side one side, then offers treatment substrate S by each negative electrode target 31a, 31b, 31c, 31d each gap to each other that is set up in parallel.
In addition, in the present embodiment, for the air-supply duct 61a with minimum quantity effectively imports reactant gases, be that to pass the 1 air-supply duct 61b that the center of negative electrode target 31a, 31b, 31c, 31d extends with setting be that example describes, but can't dispose air-supply duct 61a in the manner described above in the reason that constitutes owing to device in some cases (because the driving means etc. of magnet assemblies is arranged).In the case, but also bias configuration on the direction that is set up in parallel perpendicular to the negative electrode target.At this moment, can be set up in parallel perpendicular to the negative electrode target on the direction of direction,, regulate the amount that offers the reactant gases of treatment substrate S by each negative electrode target 31a, 31b, 31c, 31d each gap to each other that is set up in parallel every many air-supply duct 51 of predetermined distance configuration.
As mentioned above, import means 6b by constituting reactant gases with gas, can make reactant gases not offer treatment substrate S with having biasing, make reactant gases roughly be present in treatment substrate S equably in the space of negative electrode target one side, this reactant gases with go out to fly to treatment substrate S's from negative electrode target 31a, 31b, 31c, 31d sputter, sputtering particle by plasma activation reacts, and adheres to and is deposited on the treatment substrate surface.Consequently can prevent to produce reactive patch in the treatment substrate face S, thereby make membranous inequalities such as occurring resistivity value in the treatment substrate face S.
In addition, because air-supply duct 61b is configured in each negative electrode target 31a, 31b, 31c, the 31d back side one side, thereby can dwindle each negative electrode target 31a, 31b, 31c, the 31d gap to each other that can't discharge sputtering particle to greatest extent, can on whole of treatment substrate S, form the uniform film of film thickness distribution.Also have, owing to can in the space between the wall of magnet assemblies 4 and vacuum vessel 11, the direction that is set up in parallel along each negative electrode target 31a, 31b, 31c, 31d dispose air-supply duct 61b, thereby simple in structure, in addition, fitting operation also is more prone to.
In the present embodiment, be to be illustrated at the situation that the air-supply duct 61a that sputter gas is used is arranged on the sidewall of vacuum vessel 11, but be not limited thereto, the air-supply duct 61b that uses with reactant gases is identical, also air-supply duct 61a can be configured to be set up in parallel on the direction and extend at negative electrode target 31a, 31b, 31c, 31d.
Embodiment 1
In present embodiment 1, use sputtering apparatus shown in Figure 1, on treatment substrate S, formed the MoNx film by reactive sputter.In the case, as the negative electrode target, use Mo, be roughly rectangular shape when being configured as overlooking of 200mm * 2650mm * thickness 16mm with known method, after backboard 32 welding, the survey when not using is penetrated on the same plane of face and treatment substrate S almost parallel, has been set up in parallel 14.As what air-supply duct 61a used be
The pipe of (internal diameter 4.3mm) long 3000mm on the position of distance magnet assemblies back side 400mm, is parallel to the configuration of negative electrode target.In the case, lay respectively at the form of negative electrode target gap below to each other, formed every 100mm with jet orifice 610
Jet orifice 610.
In addition, for the treatment substrate use is the glass substrate with 2200mm * 2400mm physical dimension, for the sputter condition, pressure in the vacuum vessel 11 remains on 0.4Pa, when importing sputter gas Ar by the dominant discharge controller, provide nitrogen with the flow of 500sccm, make it from jet orifice 610 ejections as reactant gases.
Comparative example 1
In comparative example 1, use sputtering apparatus same as described above, on treatment substrate S, forming the MoNx film by reactive sputter under the condition same as described above.But nitrogen is identical with sputter gas is through being arranged on the air-supply duct on vacuum vessel 11 sidewalls, by the 1st and the 2nd ground shield 33a, 33b to each other and the gap between the 2nd ground shield 33b and treatment substrate S be provided in the space in negative electrode target 31a, 31b, 31c, 31d the place ahead.
Test respectively with the membranous distribution (film resistance) of the above-mentioned film of producing on whole of glass substrate, found that: in comparative example 1, because being the periphery from treatment substrate, reactant gases provides, thereby the reaction on the treatment substrate neighboring is promoted by locality, along with the middle section to treatment substrate moves, the film resistance descends gradually, its membranous being distributed as ± 41.3%.Corresponding with it, in embodiment 1, because reactant gases is to provide by negative electrode target gap to each other, thereby its membranous being distributed as ± 18.4%, form film thickness distribution and stipulated film more uniformly.
Description of drawings
Fig. 1 is the synoptic diagram of sputtering apparatus of the present invention.
Fig. 2 is the stringing explanatory view of air-supply duct.
Description of symbols in the accompanying drawing
1, sputtering apparatus
11, vacuum vessel
31a～31d, negative electrode target
33a～33b, ground shield
6a, 6b, gas import means
61a, 61b, air-supply duct
610, jet orifice
E1, E2, sputter power supply
S, treatment substrate
Claims (5)
1, a kind of sputtering apparatus is characterized in that: have a plurality of negative electrode targets that are set up in parallel every predetermined distance in sputtering chamber, the sputter power supply of electric power can be provided to each negative electrode target, can import the gas importing means of sputter gas and reactant gases to sputtering chamber; The gas means that import that previous reaction gas imported sputtering chamber have 1 air-supply duct that direction is extended that is set up in parallel towards each negative electrode target at least; This air-supply duct has the jet orifice that sprays reactant gases to the negative electrode target when the back side of each the negative electrode target that is set up in parallel one side and each negative electrode target dispose at a certain distance.
2, sputtering apparatus according to claim 1, it is characterized in that: aforementioned sputter power supply is an AC power, it gives in a plurality of negative electrode targets that are set up in parallel each right, alternately change polarity ground impressed voltage with assigned frequency, make each negative electrode target alternately switch to anode electrode, cathode electrode, make between anode electrode and cathode electrode and produce glow discharge, form plasma atmosphere, make each negative electrode target sputter.
3, sputtering apparatus according to claim 1 and 2 is characterized in that: between the aforementioned negative electrode target and air-supply duct that is set up in parallel, the place ahead of each negative electrode target is provided with the magnet assemblies that forms tunnel shape magnetic line of force.
4, sputtering apparatus according to claim 3 is characterized in that: configuration makes the driving means of aforementioned magnet assemblies along the parallel back and forth movement of negative electrode back face of target.
5, a kind of jet-plating method, by make in the sputtering chamber every predetermined distance be set up in parallel with the locational in opposite directions plural piece negative electrode target of treatment substrate in paired negative electrode target add voltage of alternating current with the frequency of regulation with alternately changing polarity, when importing sputter gas, each negative electrode target is alternately switched to anode electrode, cathode electrode, make between anode electrode and cathode electrode and produce glow discharge, form plasma atmosphere, in the time of each negative electrode target of sputter, import reactant gases, among the jet-plating method of the film that forms regulation on the treatment substrate surface, it is characterized in that: make previous reaction gas at first after the space internal diffusion of negative electrode back face of target one side, offer treatment substrate by each negative electrode target gap to each other again.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007120708A JP4707693B2 (en) | 2007-05-01 | 2007-05-01 | Sputtering apparatus and sputtering method |
| JP120708/2007 | 2007-05-01 | ||
| PCT/JP2008/057894 WO2008136337A1 (en) | 2007-05-01 | 2008-04-24 | Sputtering apparatus and sputtering method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101657562A true CN101657562A (en) | 2010-02-24 |
| CN101657562B CN101657562B (en) | 2011-05-11 |
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| CN2008800118311A Active CN101657562B (en) | 2007-05-01 | 2008-04-24 | Sputtering apparatus and sputtering method |
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|---|---|
| JP (1) | JP4707693B2 (en) |
| KR (1) | KR101050121B1 (en) |
| CN (1) | CN101657562B (en) |
| TW (1) | TWI433949B (en) |
| WO (1) | WO2008136337A1 (en) |
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| CN102828155A (en) * | 2011-05-23 | 2012-12-19 | 三星显示有限公司 | Separated target apparatus for sputtering and sputtering method using the same |
| CN103282542A (en) * | 2011-04-12 | 2013-09-04 | 株式会社爱发科 | Target and target production method |
| CN104818458A (en) * | 2014-02-04 | 2015-08-05 | 株式会社爱发科 | Film forming method |
| TWI736839B (en) * | 2018-03-16 | 2021-08-21 | 日商愛發科股份有限公司 | Film forming method |
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| AT513190B9 (en) | 2012-08-08 | 2014-05-15 | Berndorf Hueck Band Und Pressblechtechnik Gmbh | Apparatus and method for plasma coating a substrate, in particular a press plate |
| JP6196078B2 (en) * | 2012-10-18 | 2017-09-13 | 株式会社アルバック | Deposition equipment |
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| JP4780972B2 (en) * | 2004-03-11 | 2011-09-28 | 株式会社アルバック | Sputtering equipment |
| JP4580781B2 (en) * | 2004-03-19 | 2010-11-17 | 株式会社アルバック | Sputtering method and apparatus |
| JP4922581B2 (en) * | 2005-07-29 | 2012-04-25 | 株式会社アルバック | Sputtering apparatus and sputtering method |
-
2007
- 2007-05-01 JP JP2007120708A patent/JP4707693B2/en active Active
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2008
- 2008-04-24 KR KR1020097021361A patent/KR101050121B1/en active IP Right Grant
- 2008-04-24 CN CN2008800118311A patent/CN101657562B/en active Active
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103282542A (en) * | 2011-04-12 | 2013-09-04 | 株式会社爱发科 | Target and target production method |
| CN102828155A (en) * | 2011-05-23 | 2012-12-19 | 三星显示有限公司 | Separated target apparatus for sputtering and sputtering method using the same |
| CN104818458A (en) * | 2014-02-04 | 2015-08-05 | 株式会社爱发科 | Film forming method |
| CN104818458B (en) * | 2014-02-04 | 2019-03-05 | 株式会社爱发科 | Film build method |
| TWI736839B (en) * | 2018-03-16 | 2021-08-21 | 日商愛發科股份有限公司 | Film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200920868A (en) | 2009-05-16 |
| TWI433949B (en) | 2014-04-11 |
| WO2008136337A1 (en) | 2008-11-13 |
| JP2008274366A (en) | 2008-11-13 |
| CN101657562B (en) | 2011-05-11 |
| KR20090122383A (en) | 2009-11-27 |
| KR101050121B1 (en) | 2011-07-19 |
| JP4707693B2 (en) | 2011-06-22 |
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