CN101691200B - Low temperature vacuum encapsulation structure of non-refrigeration infrared detector and manufacturing method thereof - Google Patents
Low temperature vacuum encapsulation structure of non-refrigeration infrared detector and manufacturing method thereof Download PDFInfo
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- CN101691200B CN101691200B CN2009101967957A CN200910196795A CN101691200B CN 101691200 B CN101691200 B CN 101691200B CN 2009101967957 A CN2009101967957 A CN 2009101967957A CN 200910196795 A CN200910196795 A CN 200910196795A CN 101691200 B CN101691200 B CN 101691200B
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Abstract
The invention relates to a low temperature vacuum encapsulation structure of a non-refrigeration infrared detector and a manufacturing method thereof. The structure is characterized in that: the low temperature vacuum encapsulation structure comprises a silicon substrate sensor chip comprising a suspended infrared sensitive element and a silicon substrate infrared optical filter cover plate with a concave cavity structure, wherein the silicon substrate infrared optical filter cover plate with the concave cavity structure is fixed on the silicon substrate sensor chip through vacuum wafer alignment bonding to form the complete non-refrigeration infrared detector. In the manufacturing method, the wafer level low temperature alignment bonding technology is utilized to carry out low temperature vacuum bonding on a silicon substrate wafer comprising an infrared sensitive element and a silicon substrate wafer comprising an infrared optical filtering thin film to realize the integration of the infrared optical filter and infrared sensitive element manufacturing technology of the detector. The structure not only can protect the infrared sensitive element against external pollution and destruction, but also carries out vacuum encapsulation on the infrared sensitive element of the infrared detector through the wafer alignment bonding and improves the performance of the infrared detector.
Description
Technical field
The present invention relates to a kind of low temperature vacuum encapsulation structure and preparation method of non-refrigeration infrared detector, belong to non-refrigeration infrared acquisition and Micrometer-Nanometer Processing Technology field.
Background technology
Along with infrared detection technique improves in the status in military and civilian field day by day, the range of application of Infrared Detectors is also in continuous increase.Wherein non-refrigeration infrared detector is owing to need not refrigeration, simple to operate receiving much concern, and developed rapidly.Non-refrigeration infrared detector comprises two parts, and one is non-refrigeration infrared sensor, and another is exactly an infrared filter.The non-refrigeration infrared detector of making at present mainly adopts common back envelope technology (J.Schieferdecker; R.Quad; E.
and M.Schulze; " Infrared thermopile sensors with high sensitivity and very lowtemperature coefficient, " Sens.Actuators A:Phys.vol.46-47, pp.422-427; 1995.); The disk that promptly will comprise infrared sensor earlier carries out scribing, will be seated in through the bare chip that comprises infrared sensor that scribing obtains on the convex metal base (being generally the TO type) then, links to each other with pin through methods such as gold ball bondings; Be welded on the base through the pipe cap that will have optical filter at last, accomplish the integral manufacturing and the encapsulation of non-refrigeration infrared detector.The welding of pipe cap and metab has following several types: seal, stored energy welding and other welding procedure.
There is following problem in the method for packing of this traditional non-refrigeration infrared detector: first; Owing to want earlier disk to be carried out scribing to obtain bare chip; And the infrared sensor in the non-refrigeration infrared detector generally all is to adopt suspension structure to carry out insulation; Therefore the microactuator suspension structure is very easy to be destroyed in the scribing processes, so yield rate is difficult to improve; The second, the encapsulation of detector is owing to be to adopt wafer-level package, so packaging efficiency is low; The 3rd and since optical filter be through glue bond on pipe cap, the method for pipe cap and base welding is accomplished the air-tight packaging of detector, therefore is difficult to the acquisition Vacuum Package.So the encapsulating structure of common non-refrigeration infrared detector generally all can only be through filling N
2Reducing the thermal convection current of packaging environment gas, be difficult to adopt Vacuum Package with the influence of thorough elimination packaging environment gas thermal convection current to detector performance Deng inert gas, this just causes the performance of the Infrared Detectors (R.Gooch that can't be greatly improved; T.Schimert, W.McCardel, B.Ritchey; D.Gilmour and W.Koziarz, " Wafer-levelvacuum packaging for MEMS, " J.Vac.Sci.Technol.A.vol.17; Pp.2295-2299,1999.); The 4th, because the Can cost is generally all higher, the non-refrigeration infrared detector cost that therefore common encapsulation is made also is difficult to reduce.
Summary of the invention
The problem that exists in the conventional package method to non-refrigeration infrared detector; Shortcomings such as the performances of IR after the special encapsulation is low, packaging efficiency is low, packaging cost is high, packaging technology is complicated and yield rate is low the present invention proposes a kind of low temperature vacuum encapsulation structure and preparation method of non-refrigeration infrared detector.The low temperature vacuum encapsulation structure that the present invention proposes mainly comprises two parts: the silicon base sensor chip that 1) discharges the suspension infrared sensor of making from the front; 2) has the low-doped silicon base infrared fileter cover plate of curved cavity.Wherein said silicon base sensor chip is made up of with the infrared sensor that is suspended in the cavity top the silicon substrate of the cavity structure with front etch making.Described infrared fileter cover plate then is a typical sandwich structure, specifically comprises three parts: 1) back side has the light dope silicon chip substrate of curved cavity; 2) be positioned at the blooming and the solder layer at the cover plate back side; 3) be positioned at cover plate positive optical thin film and field range limiting layer.The optical filter cover plate is aimed at bonding through the vacuum disk and is fixed on silicon base sensor chip top, and the cavity on the cavity of silicon base sensor chip and the optical filter cover plate is formed a vacuum chamber, and infrared sensor then just in time is positioned among this vacuum chamber.
The present invention realizes goal of the invention through following technical scheme:
(1) at first passes through fine process is accomplished the infrared sensor structure on silicon substrate making.According to the selection of bonding solder layer, also can on the device disk, make one deck solder layer in addition.
(2) through gluing photoetching and the positive corrosion opening of making of corroding method silicon chip; Form the passage that infrared sensor discharges; Use the method corrosion open front face corrosion silicon substrate of dry method or wet etching then, form the suspending film structure, discharge infrared sensor.
(3) produce curved cavity through methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion at the back side of an other lightly doped silicon substrate.
(4) the silicon substrate front and back deposition optical thin film of making in step (3) filters selection function to realize the outer wavelength of red detector.
Backside deposition one deck solder layer of the silicon substrate of (5) making in step (4), and solder layer is carried out graphical treatment through the method for gluing photoetching or serigraphy.
The device disk that (6) will comprise infrared sensor carries out wafer level low temperature with the cover plate disk that comprises the infrared filtering film and aims at bonding under vacuum.
(7) the positive deposition of the disk after bonding is good one deck infrared reflective metallic.On the metal level of deposition, produce figure through gluing photoetching and metal erosion, realize Infrared Detectors visual line of sight control function.
(8) adopt scribing machine that the said bonding disk of step (7) is carried out a scribing on the direction, the scribe line on the infrared detector chip pad is scratched through the method for scribing.
(9) adopt scribing machine that bonding disk described in the step (8) is carried out the scribing on transverse axis and the y direction, the Infrared Detectors unit on the disk is separated, simultaneously the top layer silicon on the infrared detector chip pad is removed.
(10) the single infrared detector chip that obtains after the scribing is fixed on the substrate, and is electrically connected with substrate through the method for routing.
(11) the chip periphery is coated with the last layer sealing with the protection plain conductor.
This shows that the characteristic of the low temperature vacuum encapsulation structure of non-refrigeration infrared detector provided by the invention is:
(1) its structure comprises 1) one comprise the silicon base sensor chip of suspension infrared sensor; 2) one comprises curved cavity silicon base infrared fileter cover plate; 3) comprise curved cavity infrared fileter cover plate and be fixed on the silicon base sensor chip through vacuum disk aligning bonding, both form a complete non-refrigeration infrared detector;
(2) cavity on the cavity of described silicon base sensor chip and the optical filter cover plate is formed a vacuum chamber, and infrared sensor then just in time is positioned among this vacuum chamber;
(3) described solder layer is a kind of among Au-Au, Au-non-crystalline silicon Si, the Au-Sn; Perhaps be low temperature glass slurry or polymer; The light dope concentration of said silicon chip is 1 * 10
10～1 * 10
15Cm
-3
(4) deposit the visual line of sight that the graphical metallic film of one deck is used to limit non-Infrared Detectors in the front of infrared detector chip.
The preparation method of the low temperature vacuum encapsulation structure of non-refrigeration infrared detector provided by the invention is characterised in that the silicon substrate disk that utilizes wafer level low temperature aligning bonding techniques will comprise infrared sensor carries out the cryogenic vacuum bonding with the silicon substrate disk that comprises the infrared filtering film; Realize infrared sensor manufacture craft integrated of detector infrared fileter and detector, it is characterized in that:
(1) solder layer is selected Au-Au, Au-non-crystalline silicon Si or Au-Sn, and then infrared sensor prepares solder layer before discharging on the device disk; The release of infrared sensor is that the silicon micromachining technology through wafer level discharges;
(2) before the detector chip scribing; Through the method for scribing the scribe line on the infrared detector chip pad is scratched earlier; Scribing should be carried out at pad scribe line place, and scribing only need carry out in one direction, and scribing thickness should be controlled at the thickness of optical filter cover plate silicon chip; After the scribe line on the infrared detector chip pad being scratched, through the method for scribing the Infrared Detectors unit on the disk is separated again, and simultaneously the cover plate silicon chip on the Infrared Detectors pad is removed through the method for scribing; Scribing this moment should be carried out on X direction and y direction respectively, and scribing thickness is the thickness of bonding pad; The single detector chip that obtains after the scribing directly is fixed on the substrate, and the method through routing is electrically connected with substrate, and described substrate can be printed circuit board (PCB), ceramic substrate or encapsulation shell;
(3) all side-seam cements of chip are epoxy glue or silica gel; Cryogenic vacuum bonding package temperature is 300～500 ℃.
Compare with the method for packing of traditional non-refrigeration infrared detector; The present invention is owing to adopt wafer level packaging that optical filter and infrared sensor are encapsulated combination; Can improve the device packaging efficiency greatly, the volume of encapsulated device also can reduce greatly, and encapsulated device can be connected with peripheral circuit through the mode of paster; Need not adopt Can, packaging cost also can reduce greatly.Simultaneously, because before chip is cut apart, encapsulate, this has just protected the infrared sensor of device not receive the influence of subsequent technique, has improved the yield rate of device.In addition, because infrared sensor is to be encapsulated among the vacuum cavity, the thermal convection current of packaging environment gas can be eliminated the influence of detector fully, and the performance of detector can obtain very big raising.
Description of drawings
Fig. 1～Figure 11 is the concrete technological process of embodiment 1 said device:
Fig. 1 is for making the structure sheaf of infrared sensor chip;
Fig. 2 is for to carry out graphical treatment to solder layer;
Fig. 3 is for discharging infrared sensor;
Fig. 4 is for to go out curved cavity by lightly doped silicon wafer to manufacture;
The front and back deposition optical thin film of Fig. 5 silicon chip;
Fig. 6 deposit solder layer also carries out graphical treatment;
Fig. 7 comprises the silicon substrate disk of infrared sensor for Fig. 3 and the solder layer of graphical treatment carries out bonding;
Fig. 8 is the making of restriction detector field of view scope;
Fig. 9 is for removing the cover plate silicon chip at Infrared Detectors pad place;
Figure 10 is for to be mounted on Infrared Detectors on substrate or the base;
Figure 11 coats sealing protection metal lead wire;
Figure 12 is the sketch map of detector disk scribing.
Among the figure:
11 heat insulating construction layers; 12 chip bonding pads; 13 lightly doped silicon substrates; 14 optical thin films; 15 infrared reflective metallic; 16 solder layers; The silicon substrate of 17 infrared sensors; 19 infrared absorption layers; 20 insulating barriers; 21 infrared sensors; The cavity portion of 22 infrared sensors; The cavity of 23 optical filter cover plates; 24 front etch openings; 25 metal lead wires; 26 substrates or base; Pin area on 27 substrates or the base; 29 pad scribe line; The scribe line of 30 detector chips on y direction; The scribe line of 31 detector chips on X direction; 32 sealings.
The specific embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is carried out detailed description.
Embodiment 1
The solder layer of infrared sensor and optical filter cover plate bonding is selected TiW/Au for use.On infrared sensor disk and optical filter cover plate disk, all deposited one deck TiW/Au solder layer, the solder layer on device disk and the optical filter disk has been carried out graphically through photoetching and corroding method.The main technique step comprises:
(1) on the monocrystalline silicon piece of polishing, deposits SiO through thermal oxide, LPCVD deposit spathic silicon, PECVD
2And Si
3N
4, prepared thermal insulation films 11 such as metal sputtering, gluing photoetching and corrosion, chip bonding pad 12, INFRARED ABSORPTION film 19, insulation film 20 and infrared sensor 21 are accomplished the structure sheaf of infrared sensor.See Fig. 1.
(2) deposit one deck TiW/Au on the silicon chip in step (1) as the solder layer on the device disk, and the TiW/Au solder layer is carried out graphical treatment through the method for gluing photoetching and chemical attack.Gold layer after graphically good defines the bonding zone on the silicon substrate disk that comprises infrared sensor as the solder layer on the sensing element disk.See Fig. 2.
(3) through gluing photoetching and the positive corrosion opening of making of the silicon chip of corroding method in step (2), form the passage that infrared sensor discharges.Corrode silicon substrate through the method for dry method or wet etching from the corrosion open front face then, form the suspension film structure, discharge infrared sensor.See Fig. 3.
(4) produce curved cavity through methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion in other one lightly doped silicon chip back.See Fig. 4.
(5) deposition of the silicon chip front and back in step (4) optical thin film.See Fig. 5.
(6) silicon chip back in step (5) deposits one deck TiW/Au as the solder layer on the optical filter disk, and through the method for gluing photoetching and chemical attack the TiW/Au solder layer is carried out graphical treatment.Gold layer after graphically good defines the bonding zone on the optical filter cover plate disk as the solder layer on the cover plate disk.See Fig. 6.
(7) silicon substrate disk that comprises infrared sensor in the step (3) and optical filter cover plate silicon substrate disk in the step (6) are carried out Jin-Jin low temperature under vacuum and aim at bonding, the bonding temperature scope is 300～500 ℃.See Fig. 7.
(8) at the positive deposition of the bonding silicon chip layer of metal aluminium of step (7), through gluing photoetching and aluminium corroding method aluminium lamination is carried out graphically, with the field range of restriction detector.See Fig. 8.
(9) the bonding disk in the step (8) is carried out scribing through the pad scribe line place of scribing machine on the infrared detector chip pad, the pad scribe line is scratched, the scribing THICKNESS CONTROL is the thickness of optical filter cover plate silicon chip.Shown in figure 12, scribe line is scratched along scribe line 29 at y direction and to be got final product.
(10) the bonding disk in the step (9) is carried out scribing through scribing machine on transverse axis and y direction, the scribing THICKNESS CONTROL is the thickness of bonding disk.Method through scribing is separated the Infrared Detectors unit on the disk, obtains the integrated infrared detector chip of infrared fileter and infrared sensor, simultaneously the cover plate silicon chip at Infrared Detectors pad place is removed, and the structure that obtains is seen Fig. 9.Shown in figure 12, along scribe line 30 and 31 the bonding disk is drawn and to be got final product.
(11) detector chip is mounted on a substrate or base, and detector is electrically connected with substrate or base through the method for routing.See Figure 10.
(12) the chip periphery is coated with the last layer sealing with the protection plain conductor.See Figure 11.
Embodiment 2
The solder layer of infrared sensor and optical filter cover plate bonding is selected glass paste for use.Do not have the deposit solder layer on the infrared sensor disk, only on optical filter cover plate disk, all deposited one deck glass paste solder layer, solder layer is carried out graphically through the method for serigraphy.The main technique step comprises:
(1) on the monocrystalline silicon piece of polishing, deposits SiO through thermal oxide, LPCVD deposit spathic silicon, PECVD
2And Si
3N
4, technologies such as metal sputtering, gluing photoetching and corrosion accomplish the structure sheaf of infrared sensor.
(2) through gluing photoetching and the positive corrosion opening of making of corroding method silicon chip; Form the passage that infrared sensor discharges; Use the method corrosion open front face corrosion silicon substrate of dry method or wet etching then, form the suspending film structure, discharge infrared sensor.
(3) on other one low-doped silicon chip, produce curved cavity through methods such as oxidation, gluing photoetching, silica erosion, silicon corrosion.
(4) front and back of the silicon chip in step (3) deposition optical thin film.
(5) silicon chip back in step (4) applies the patterned glass paste of last layer through the method for serigraphy, forms the solder layer on the cover plate.Then glass paste is carried out sintering processes.
(6) silicon substrate disk that comprises infrared sensor in the step (2) and optical filtering cover plate silicon substrate disk in the step (5) are carried out the glass paste low-temperature round slice under vacuum and aim at bonding, the bonding temperature scope is 300～500 ℃.
(7) the deposition layer of metal aluminium in the front of the bonding silicon chip of step (6) carries out graphically aluminium lamination through gluing photoetching and aluminium corroding method, to limit the field range of detector.
(8) the bonding disk in the step (7) is carried out scribing through the pad scribe line place of scribing machine on the infrared detector chip pad, the pad scribe line is scratched, the scribing THICKNESS CONTROL is the thickness of optical filter cover plate silicon chip.Shown in figure 12, scribe line is scratched along scribe line 29 at y direction and to be got final product.
(9) the bonding disk in the step (8) is carried out scribing through scribing machine on transverse axis and y direction, the scribing THICKNESS CONTROL is the thickness of bonding disk.Method through scribing is separated the Infrared Detectors unit on the disk, obtains the integrated infrared detector chip of infrared filter and infrared sensor, simultaneously the cover plate silicon chip at Infrared Detectors pad place is removed, and the structure that obtains is seen Figure 10.Shown in figure 12, along scribe line 30 and 31 the bonding disk is drawn and to be got final product.
(10) detector chip is mounted on a substrate or base, and detector is electrically connected with substrate or base through the method for routing.
(11) the chip periphery is coated with the last layer sealing with the protection plain conductor.
Embodiment 3
The solder layer of infrared sensor disk is selected TiW/Au for use, and the solder layer of optical filter cover plate disk is selected Sn for use.Deposition one deck TiW/Au solder layer on the infrared sensor disk, deposition one deck Sn solder layer carries out graphically the solder layer on device disk and the optical filter disk through photoetching and corroding method on optical filter cover plate disk.
Its practical implementation step part is identical with embodiment 1; The main distinction is: first; Embodiment 1 step (6) is revised as the Seed Layer at cover plate bonding face deposition one deck TiW/Au; The gluing photoetching obtains the bonding face figure then, again at this bonding face electroplating deposition layer of metal tin (Sn), at last the Seed Layer of photoresist and non-graphics field is removed.The second, the gold-gold bonding in embodiment 1 step (7) is revised as Jin-Xi bonding, remainder is constant.Other step is identical with corresponding steps among the embodiment 1.
Claims (10)
1. the preparation method of the low temperature vacuum encapsulation structure of a non-refrigeration infrared detector; It is characterized in that the silicon substrate disk that utilizes wafer level low temperature aligning bonding techniques will comprise infrared sensor carries out the cryogenic vacuum bonding with the silicon substrate disk that comprises the infrared filtering film; Realize infrared sensor manufacture craft integrated of detector infrared fileter and detector, may further comprise the steps:
(a) at first pass through fine process is accomplished the infrared sensor structure on silicon substrate making;
(b) through gluing photoetching and the positive corrosion opening of making of corroding method silicon chip; Form the passage that infrared sensor discharges; Use the method corrosion open front face corrosion silicon substrate of dry method or wet etching then, form the suspending film structure, discharge infrared sensor;
(c) produce curved cavity through oxidation, gluing photoetching, silica erosion, silicon corroding method at the back side of an other lightly doped silicon substrate;
(d) the silicon substrate front and back deposition optical thin film of making in step (c) filters selection function to realize the Infrared Detectors wavelength;
Backside deposition one deck solder layer of the silicon substrate of (e) making in step (d), and solder layer is carried out graphical treatment through the method for gluing photoetching or serigraphy;
The device disk that (f) will comprise infrared sensor carries out wafer level low temperature with the cover plate disk that comprises the infrared filtering film and aims at bonding under vacuum;
(g) the positive deposition of the disk after bonding is good one deck infrared reflective metallic; On the metal level of deposition, produce figure through gluing photoetching and metal erosion, realize Infrared Detectors visual line of sight control function;
(h) adopt scribing machine that the said bonding disk of step (g) is carried out a scribing on the direction, the scribe line on the infrared detector chip pad is scratched through the method for scribing;
(i) adopt scribing machine that bonding disk described in the step (h) is carried out the scribing on transverse axis and the y direction, the Infrared Detectors unit on the disk is separated, simultaneously the top layer silicon on the infrared detector chip pad is removed;
(j) the single infrared detector chip that obtains after the scribing is fixed on the substrate, and is electrically connected with substrate through the method for routing;
(k) the chip periphery is coated with the last layer sealing with the protection plain conductor.
2. by the described preparation method of claim 1, it is characterized in that a) solder layer is selected Au-Au, Au-non-crystalline silicon or Au-Sn, then infrared sensor is prepared in solder layer on the device disk before discharging;
B) release of infrared sensor is that silicon micromachining technology through wafer level discharges.
3. by the described preparation method of claim 1, it is characterized in that:
(a) before the detector chip scribing; Through the method for scribing the scribe line on the infrared detector chip pad is scratched earlier; Scribing should be carried out at pad scribe line place, and scribing only need carry out in one direction, and scribing thickness should be controlled at the thickness of optical filter cover plate silicon chip;
(b) after the scribe line on the infrared detector chip pad being scratched, through the method for scribing the Infrared Detectors unit on the disk is separated again, and simultaneously the cover plate silicon chip on the Infrared Detectors pad is removed through the method for scribing; Scribing this moment should be carried out on X direction and y direction respectively, and scribing thickness is the thickness of bonding pad;
(c) the single detector chip that obtains after the scribing directly is fixed on the substrate, and the method through routing is electrically connected with substrate, and described substrate can be printed circuit board (PCB), ceramic substrate or encapsulation shell.
4. by the described preparation method of claim 1, it is characterized in that:
A) sealing that is coated with of chip periphery is epoxy glue or silica gel;
B) cryogenic vacuum bonding package temperature is 300～500 ℃.
5. by the described preparation method of claim 1, it is characterized in that the low temperature encapsulating structure of described non-refrigeration infrared detector comprises:
1) one comprise the suspension infrared sensor the silicon base sensor chip;
2) one comprises curved cavity silicon base infrared fileter cover plate;
3) comprise curved cavity infrared fileter cover plate and be fixed on the silicon base sensor chip through vacuum disk aligning bonding, both form a complete non-refrigeration infrared detector.
6. by the described preparation method of claim 5, it is characterized in that described silicon base sensor chip is made up of with the infrared sensor that is suspended in the cavity top the silicon substrate with cavity structure that front etch makes.
7. by the described preparation method of claim 5, it is characterized in that described infrared fileter cover plate is a sandwich structure, promptly 1) back side has the light dope silicon chip substrate of curved cavity; 2) be positioned at the blooming and the solder layer at the cover plate back side; 3) be positioned at cover plate positive optical thin film and field range limiting layer; Light dope concentration is 1 * 10
10～1 * 10
15Cm
-3
8. by the described preparation method of claim 5, it is characterized in that cavity and vacuum chamber of the composition of the cavity on the optical filter cover plate of silicon base sensor chip, infrared sensor then is positioned among this vacuum chamber.
9. by the described preparation method of claim 7, it is characterized in that described solder layer is a kind of among Au-Au, Au-non-crystalline silicon, the Au-Sn; Perhaps be low temperature glass slurry or polymer.
10. by claim 5 or 7 described preparation methods, it is characterized in that depositing the visual line of sight that the graphical metallic film of one deck is used to limit non-refrigeration infrared detector in the front of infrared detector chip.
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|---|---|---|---|---|
| CN101893483B (en) * | 2010-05-04 | 2012-03-07 | 电子科技大学 | Packaging technology and packaging device of non-refrigerated infrared focal plane array device |
| CN102637764B (en) * | 2012-03-19 | 2014-06-04 | 中国科学院上海技术物理研究所 | Combined packaging structure available for working at profound hypothermia for detectors, and manufacturing method of combined packaging structure |
| CN102583220B (en) * | 2012-03-29 | 2014-11-05 | 江苏物联网研究发展中心 | Wafer-level vacuum packaged infrared detector and manufacturing method thereof |
| CN103199097B (en) * | 2013-04-08 | 2016-03-02 | 孙健 | A kind of pixel structure and the no-refrigeration infrared focal plane detector based on pixel structure |
| CN105304505B (en) * | 2014-06-17 | 2018-07-06 | 中国科学院上海微系统与信息技术研究所 | Mix wafer-level vacuum encapsulating method and structure |
| CN104090121B (en) * | 2014-07-09 | 2016-06-29 | 东南大学 | The hot type wind speed wind direction sensor device of three-dimensionally integrated front sense wind and method for packing |
| CN104061967B (en) * | 2014-07-09 | 2017-05-10 | 东南大学 | Heat type wind speed and direction sensor based on substrate transfer process and packaging method thereof |
| CN105692544B (en) * | 2014-11-28 | 2017-08-29 | 中芯国际集成电路制造(上海)有限公司 | The forming method of MEMS |
| TWI561799B (en) * | 2015-08-24 | 2016-12-11 | Chiang Chung I | Packaging method, cover structure of temperature sensing element and method for fabricating the same |
| DE102017206386A1 (en) * | 2017-04-13 | 2018-10-18 | Robert Bosch Gmbh | Method for protecting a MEMS unit from infrared tests and MEMS unit |
| CN110429158A (en) * | 2019-07-04 | 2019-11-08 | 云南师范大学 | The wet etching method of non-refrigerated infrared focal plane probe optical window |
| CN110544632B (en) * | 2019-08-01 | 2021-01-29 | 中国电子科技集团公司第二十九研究所 | Method for manufacturing BGA (ball grid array) bonding pad on packaging cover plate of LTCC (Low temperature Co-fired ceramic) substrate with double-sided cavity |
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| US5550373A (en) * | 1994-12-30 | 1996-08-27 | Honeywell Inc. | Fabry-Perot micro filter-detector |
| CN1743959A (en) * | 2004-09-01 | 2006-03-08 | 中国科学院电子学研究所 | Infrared light supply and preparation method based on micro-electronic mechanical system technique |
| CN101196423A (en) * | 2006-12-04 | 2008-06-11 | 通用电气公司 | Radiation sensor |
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