CN101714409A - 具有改进的部分页编程能力的非易失性存储器和控制 - Google Patents
具有改进的部分页编程能力的非易失性存储器和控制 Download PDFInfo
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- CN101714409A CN101714409A CN200910160838A CN200910160838A CN101714409A CN 101714409 A CN101714409 A CN 101714409A CN 200910160838 A CN200910160838 A CN 200910160838A CN 200910160838 A CN200910160838 A CN 200910160838A CN 101714409 A CN101714409 A CN 101714409A
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Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5646—Multilevel memory with flag bits, e.g. for showing that a "first page" of a word line is programmed but not a "second page"
Abstract
Description
Claims (47)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/830,824 US7057939B2 (en) | 2004-04-23 | 2004-04-23 | Non-volatile memory and control with improved partial page program capability |
US10/830,824 | 2004-04-23 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800117921A Division CN1942975B (zh) | 2004-04-23 | 2005-04-19 | 用于编程非易失性存储器单元的存储器系统和方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101714409A true CN101714409A (zh) | 2010-05-26 |
CN101714409B CN101714409B (zh) | 2014-06-04 |
Family
ID=34966316
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200910160838.6A Expired - Fee Related CN101714409B (zh) | 2004-04-23 | 2005-04-19 | 具有改进的部分页编程能力的非易失性存储器和控制 |
CN2005800117921A Expired - Fee Related CN1942975B (zh) | 2004-04-23 | 2005-04-19 | 用于编程非易失性存储器单元的存储器系统和方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2005800117921A Expired - Fee Related CN1942975B (zh) | 2004-04-23 | 2005-04-19 | 用于编程非易失性存储器单元的存储器系统和方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7057939B2 (zh) |
JP (2) | JP5133682B2 (zh) |
KR (1) | KR101127413B1 (zh) |
CN (2) | CN101714409B (zh) |
TW (1) | TWI305915B (zh) |
WO (1) | WO2005109443A1 (zh) |
Families Citing this family (125)
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WO2005109443A1 (en) | 2005-11-17 |
JP5133682B2 (ja) | 2013-01-30 |
US20080025099A1 (en) | 2008-01-31 |
TW200620284A (en) | 2006-06-16 |
CN1942975A (zh) | 2007-04-04 |
US7453735B2 (en) | 2008-11-18 |
JP2011258309A (ja) | 2011-12-22 |
JP2007534106A (ja) | 2007-11-22 |
US7057939B2 (en) | 2006-06-06 |
US7280396B2 (en) | 2007-10-09 |
CN101714409B (zh) | 2014-06-04 |
TWI305915B (en) | 2009-02-01 |
KR101127413B1 (ko) | 2012-03-23 |
US20050237814A1 (en) | 2005-10-27 |
KR20070012810A (ko) | 2007-01-29 |
US20060203561A1 (en) | 2006-09-14 |
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