CN101740369B - Method for preparing metallic metal nitride film - Google Patents
Method for preparing metallic metal nitride film Download PDFInfo
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- CN101740369B CN101740369B CN2008102266875A CN200810226687A CN101740369B CN 101740369 B CN101740369 B CN 101740369B CN 2008102266875 A CN2008102266875 A CN 2008102266875A CN 200810226687 A CN200810226687 A CN 200810226687A CN 101740369 B CN101740369 B CN 101740369B
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- nitride film
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Abstract
The invention discloses a method for preparing a metallic metal nitride film. The method comprises the following steps of: preparing an insulated metal nitride film by a chemical method; and using Ar ions to bombard the surface of the insulated metal nitride film, reducing the nitrogen element content of the insulated metal nitride film, and converting the insulated metal nitride film into the metallic metal nitride film. The method has the advantages of effectively adjusting some atom components of the metal nitride film, further modifying physical and electrical properties of the film, and making the preparation of a gate electrode of the metal nitride by the chemical synthesis method possible.
Description
Technical field
The present invention relates to high k and metal gate material technical field in the microelectric technique, relate in particular to a kind of method for preparing metallic metal nitride film, particularly a kind of method that the insulating properties metal nitride film is changed into metallic metal nitride film.
Background technology
Along with the develop rapidly of semiconductor technology, each the main semiconductor company in the international coverage has all taken up towards the exploitation of " high k/ metal gate " technology of 32 nanometers and following technology generation at present.Metal nitride (comprising HfN, TaN) because its good thermal stability, lower resistivity and and good and compatibility hafnium base high K medium material, therefore as a kind of very important metal gate electrode utmost point material by extensive studies and application.
At present, synthetic HfN or TaN film mainly contain two kinds of methods, and a kind of is physical gas-phase deposite method (as sputter), and a kind of is chemical deposition (as MOCVD, ALD etc.).And when utilizing sputtering method to prepare metal gate,, easily the medium of oxides film is produced damage, thereby cause a large amount of defectives because the nuclear energy that sputters is higher.For example, work as SiO
2Grid medium thickness is reduced to 3 nanometers when following, and this damage becomes unacceptable, thereby causes electrology characteristic to lose efficacy.Chemically be the method for synthetic relatively preferably HfN or TaN film, especially when gate dielectric membrane thins down.
On the other hand, when utilizing chemical method synthesizing nitride metal gate, also exist some challenging problems.Generally can adopt ammonia (NH in the chemical synthesis process
3) prepare HfN or TaN film as reducing agent.But, NH
3Have very strong reproducibility, this causes containing too much N element and becoming the insulating properties metal nitride film with the hafnium or the tantalum nitride film of this method preparation, as Hf
3N
4And Ta
3N
5Deng.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of method of utilizing chemical method in conjunction with the synthetic metallic metal nitride film of Ar ion bombardment reprocessing.
(2) technical scheme
For achieving the above object, the invention provides a kind of method for preparing metallic metal nitride film, this method comprises:
Adopt chemical method to prepare the insulating properties metal nitride film;
With this insulating properties metal nitride film surface of Ar ion bombardment, reduce the content of nitrogen element in this insulating properties metal nitride film, change this insulating properties metal nitride film into metallic metal nitride film;
Wherein, described insulating properties metal nitride film is HfN
xOr TaN
xFilm, metallic metal nitride film are HfN
yOr TaN
yFilm, and the process energy is this insulating properties of Ar ion bombardment HfN of 500 electron-volts to 4000 electron-volts
xOr TaN
xFilm surface is translated into metallicity HfN
yOr TaN
yFilm, and X＞1,0＜y≤1.
In the such scheme, when adopting chemical method to prepare the insulating properties metal nitride film, described chemical method is that mocvd method MOCVD, Atomic layer deposition method ALD or plasma strengthen metal organic chemical vapor deposition method PEMOCVD.
In the such scheme, described insulating properties metal nitride film is Hf
3N
4Or Ta
3N
5Film.。
In the such scheme, the thickness of described insulating properties metal nitride film and metallic metal nitride film is 1 nanometer to 5 nanometer.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, utilizes the present invention, can reduce physical gas-phase deposite method such as sputtering sedimentation and in preparation metal gate process, directly contact defective and the damage that produces with the gate insulation material because of high energy particle.
2, utilize the present invention, can regulate the nitrogen content of metal nitride film, and then this film is carried out modification by the selectivity bombardment effect of Ar ion.The present invention can solve the problem that chemical synthesis process prepares the insulating properties metal nitride film formation that exists in the metal gate electrode effectively, and this has greatly expanded chemical synthesis process in preparation metal nitride gate electrode Application for Field.
Description of drawings
Fig. 1 is at the SiO that carries out the PROCESS FOR TREATMENT in early stage according to the embodiment of the invention
2The schematic diagram of last growth high K medium layer;
Fig. 2 is with metal organic chemical vapor deposition or Atomic layer deposition method composite insulation HfN according to the embodiment of the invention
xOr TaN
xThe schematic diagram of film (x＞1);
Fig. 3 is according to the schematic diagram of the embodiment of the invention with Ar ion bombardment insulating properties metal nitride film surface;
Fig. 4 forms metallicity HfN according to the embodiment of the invention with Ar ion bombardment insulating properties metal nitride film surface
yOr TaN
yThe schematic diagram of film (y≤1).
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
This method for preparing metallic metal nitride film provided by the invention, be a kind ofly to change the insulating properties metal nitride film method of metallic metal nitride film into, this method strengthens metal organic chemical vapor deposition method (PEMOCVD) composite insulation HfN by method such as mocvd method, ald or plasma earlier
xOr TaN
x(x＞1) film is again with this insulating properties HfN
xOr TaN
xFilm process energy is 500 electron-volts to 4000 electron-volts Ar ion bombardment, is about to this insulating properties HfN
xOr TaN
xFilm changes metallicity HfN into
yOr TaN
yFilm (y≤1).
As shown in Figure 1, at the SiO that carries out the PROCESS FOR TREATMENT in early stage
2Last growth high K medium layer.
As shown in Figure 2, with method composite insulation HfN such as metal organic chemical vapor deposition or alds
xOr TaN
xFilm (x＞1).
As shown in Figure 3 and Figure 4, with Ar ion bombardment insulating properties metal nitride film surface, synthetic metallicity HfN
yOr TaN
yFilm (y≤1).
It is to add plasma in metal organic chemical vapor deposition process that above-mentioned plasma strengthens metal organic chemical vapor deposition method (PEMOCVD), with atomic composition and the nitrogen content in the adjusting film, and then the method for synthetic metallicity HfNx or TaNx film.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (4)
1. a method for preparing metallic metal nitride film is characterized in that, this method comprises:
Adopt chemical method to prepare the insulating properties metal nitride film;
With this insulating properties metal nitride film surface of Ar ion bombardment, reduce the content of nitrogen element in this insulating properties metal nitride film, change this insulating properties metal nitride film into metallic metal nitride film;
Wherein, described insulating properties metal nitride film is HfN
xOr TaN
xFilm, metallic metal nitride film are HfN
yOr TaN
yFilm, and the process energy is this insulating properties of Ar ion bombardment HfN of 500 electron-volts to 4000 electron-volts
xOr TaN
xFilm surface is translated into metallicity HfN
yOr TaN
yFilm, and X＞1,0＜y≤1.
2. the method for preparing metallic metal nitride film according to claim 1, it is characterized in that, when adopting chemical method to prepare the insulating properties metal nitride film, described chemical method is that mocvd method MOCVD, Atomic layer deposition method ALD or plasma strengthen metal organic chemical vapor deposition method PEMOCVD.
3. the method for preparing metallic metal nitride film according to claim 1 is characterized in that, described insulating properties metal nitride film is Hf
3N
4Or Ta
3N
5Film.
4. the method for preparing metallic metal nitride film according to claim 1 is characterized in that, the thickness of described insulating properties metal nitride film and metallic metal nitride film is 1 nanometer to 5 nanometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102266875A CN101740369B (en) | 2008-11-19 | 2008-11-19 | Method for preparing metallic metal nitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008102266875A CN101740369B (en) | 2008-11-19 | 2008-11-19 | Method for preparing metallic metal nitride film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101740369A CN101740369A (en) | 2010-06-16 |
| CN101740369B true CN101740369B (en) | 2011-12-07 |
Family
ID=42463639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008102266875A Active CN101740369B (en) | 2008-11-19 | 2008-11-19 | Method for preparing metallic metal nitride film |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102423645A (en) * | 2011-10-19 | 2012-04-25 | 南京工业大学 | Method for performing surface modification on polytetrafluoroethylene separation membrane |
| CN106367719B (en) * | 2016-10-10 | 2018-09-11 | 吉林大学 | A method of improving rock salt structure hafnium nitride film properties |
| CN107170828B (en) * | 2017-06-08 | 2021-05-18 | 湘潭大学 | Ferroelectric field effect transistor and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1363949A (en) * | 2000-12-29 | 2002-08-14 | 海力士半导体香港有限公司 | Method for forming metal grids in semiconductor device |
| CN1585102A (en) * | 2003-08-19 | 2005-02-23 | 国际商业机器公司 | Fabricating method of metallic silicide film and metal-oxide semiconductor |
| US7186446B2 (en) * | 2003-10-31 | 2007-03-06 | International Business Machines Corporation | Plasma enhanced ALD of tantalum nitride and bilayer |
| US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
-
2008
- 2008-11-19 CN CN2008102266875A patent/CN101740369B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1363949A (en) * | 2000-12-29 | 2002-08-14 | 海力士半导体香港有限公司 | Method for forming metal grids in semiconductor device |
| CN1585102A (en) * | 2003-08-19 | 2005-02-23 | 国际商业机器公司 | Fabricating method of metallic silicide film and metal-oxide semiconductor |
| US7186446B2 (en) * | 2003-10-31 | 2007-03-06 | International Business Machines Corporation | Plasma enhanced ALD of tantalum nitride and bilayer |
| US7211507B2 (en) * | 2004-06-02 | 2007-05-01 | International Business Machines Corporation | PE-ALD of TaN diffusion barrier region on low-k materials |
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| Publication number | Publication date |
|---|---|
| CN101740369A (en) | 2010-06-16 |
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