CN101752789B - NPN (negative-positive-negative) heterojunction bipolar-junction transistor laser - Google Patents
NPN (negative-positive-negative) heterojunction bipolar-junction transistor laser Download PDFInfo
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- CN101752789B CN101752789B CN2008102403533A CN200810240353A CN101752789B CN 101752789 B CN101752789 B CN 101752789B CN 2008102403533 A CN2008102403533 A CN 2008102403533A CN 200810240353 A CN200810240353 A CN 200810240353A CN 101752789 B CN101752789 B CN 101752789B
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Abstract
The invention relates to the technical field of semiconductor lasers, and discloses an NPN (negative-positive-negative) heterojunction bipolar-junction transistor laser which comprises a substrate (1), a buffer layer (2), a lower cladding layer (3), a sub-collector layer (4), a collector layer (5), a base layer (6), a quantum well active region layer (7), an emitter layer (8), an upper cladding layer (9) and a contact layer (10), wherein the quantum well active region layer is positioned between the base layer and the emitter layer, which reduces the dispersion of impurity Zn doped in the base layer to an active region on the one hand and decreases the dispersion of the impurity Zn doped in the base layer to the emitter layer on the other hand, thereby being beneficial to improving the optical and the electrical properties of elements. One part of electrons injected from an emitter illuminates in a radiative recombination way in the quantum well active region layer and the other part is collected by the collector layer to form a collector current.
Description
Technical field
The present invention relates to the semiconductor photoelectric device field, particularly a kind of NPN heterojunction bipolar transistor laser.
Background technology
2005, U.S. Illinois has at first been reported a kind of semiconductor device [Appl.Phys.Lett.Vol.87 that is called the heterojunction bipolar transistor laser in the world according to a research group of university, P.131103 (2005) .], only utilize comparatively simple extension and this device of manufacture craft to realize the lighting function and the transistorized enlarging function of laser simultaneously.Be with the difference of normal transistor, introduced a quantum well in the transistorized base.Under certain base stage one collector voltage, electronics can inject the base by collector region, and is luminous in quantum well region and hole-recombination.Light wave comes back reflective to obtain amplifying between former and later two cleavage cavity reflection minute surfaces, surpasses after certain intensity by the end face outgoing.Therefore, this device not only has conventional transistorized signal of telecommunication enlarging function, has also possessed simultaneously by the function [IEEE Spectrum, Vol 43, P.50 (2006)] of the signal of telecommunication to the light signal conversion.Just because of this characteristics are arranged, translaser might be interconnected at photon, photoelectron is integrated (OEIC) and play a great role in aspect such as light signal processing.
In the translaser structure of being reported, the quantum well active area is placed among the base, for this structure of NPN type device a significant disadvantages is arranged: using the Zn that can carry out Linear Control to hole concentration during as p type impurity, Zn is easily among up and down both direction is diffused into active area, cause the active area materials quality significantly to descend, deterioration of device luminescent properties [J.Appl.Phys., Vol 103, P.114505 (2008)].
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is to provide a kind of NPN heterojunction bipolar transistor laser, to reduce the structure complexity of translaser, reduces the influence of p type impurity to the device active region quality of materials.
(2) technical scheme
For achieving the above object, the invention provides a kind of NPN heterojunction bipolar transistor laser, comprise,
One substrate 1;
One resilient coating 2, this resilient coating 2 are grown on the described substrate 1;
One under-clad layer 3, this under-clad layer 3 are grown on the described resilient coating 2;
One inferior collector layer 4, this Asia collector layer 4 are grown on the described under-clad layer 3;
One collector layer 5, this collector layer 5 are grown on the described inferior collector layer 4;
One base layer 6, this base layer 6 are grown on the described collector layer 5;
One quantum well active region layer 7, this quantum well active region layer 7 are grown on the described base layer 6;
One emitter layer 8, this emitter layer 8 are grown on the described quantum well active region layer 7;
One top covering 9, this top covering 9 are grown on the described emitter layer 8;
One contact layer 10, this contact layer 10 is grown on the described top covering 9.
In the such scheme, described substrate 1 is the InP substrate, or the GaAs substrate, or the GaN substrate, or the SiC substrate, or the Si substrate.
In the such scheme, described quantum well active region layer 7 is between described base layer 6 and described emitter layer 8, and trap material thickness is 7~12nm in this quantum well active region layer 7, and barrier material thickness is 6~15nm, and the number of active area quantum well is 1~3.
In the such scheme, luminous by emitter layer 8 injected electrons parts radiation recombination in quantum well active region layer 7, another part is collected by inferior collector layer 4, forms collector current.
In the such scheme, described under-clad layer 3 and top covering 9 are used for the light field and the electric field of device are limited, and the two has identical materials and thickness, and thickness is between 0.4~1.2 micron.
In the such scheme, the thickness of described inferior collector layer 4 is 30~70nm, and the thickness of described collector layer 5 is 60~200nm, and the thickness of described base layer 6 is 30~120nm, the thickness of described emitter layer 8 is 30~120nm, and the thickness of described contact layer 10 is 100nm.
In the such scheme, described base layer 6 and described emitter layer 8 common ducting layers as described quantum well active region layer 7.
(3) beneficial effect
From technique scheme as can be seen, the present invention has following beneficial effect:
1, this NPN heterojunction bipolar transistor laser provided by the invention, with reported the quantum well active area is placed the structure among the base material different, be that the quantum well active area is placed n type emitter material and p
+Between the base material, this has changed p type impurity on the one hand by the situation of both direction to the active area materials diffusion, helps reducing the concentration of impurity in the active area, and then improves the active area materials quality; On the other hand, the quantum well active area is placed n type emitter material and p
+Between the base material, the active material layer has played and has stopped the effect of base stage p type impurity to emitter diffusion, helps improving the electric property of device.
2, this NPN heterojunction bipolar transistor laser provided by the invention, emitter and base material can improve the luminescent properties of device jointly as the ducting layer of the active area between the two.
Description of drawings
Fig. 1 is the generalized section of the basic NPN heterojunction bipolar transistor laser of gallium arsenic provided by the invention (indium phosphorus).
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is the generalized section of the basic NPN heterojunction bipolar transistor laser of gallium arsenic provided by the invention (indium phosphorus), and this NPN heterojunction bipolar transistor laser comprises,
One substrate 1;
One resilient coating 2, this resilient coating 2 are grown on the described substrate 1;
One under-clad layer 3, this under-clad layer 3 are grown on the described resilient coating 2;
One inferior collector layer 4, this Asia collector layer 4 are grown on the described under-clad layer 3;
One collector layer 5, this collector layer 5 are grown on the described inferior collector layer 4;
One base layer 6, this base layer 6 are grown on the described collector layer 5;
One quantum well active region layer 7, this quantum well active region layer 7 are grown on the described base layer 6;
One emitter layer 8, this emitter layer 8 are grown on the described quantum well active region layer 7;
One top covering 9, this top covering 9 are grown on the described emitter layer 8;
One contact layer 10, this contact layer 10 is grown on the described top covering 9.
Above-mentioned substrate 1 is the InP substrate, or the GaAs substrate, or the GaN substrate, or the SiC substrate, or the Si substrate.Quantum well active region layer 7 is between described base layer 6 and described emitter layer 8, and trap material thickness is 7~12nm in this quantum well active region layer 7, and barrier material thickness is 6~15nm, and the number of active area quantum well is 1~3.Luminous by emitter layer 8 injected electrons parts radiation recombination in quantum well active region layer 7, another part is collected by inferior collector layer 4, forms collector current.Under-clad layer 3 and top covering 9 are used for the light field and the electric field of device are limited, and the two has identical materials and thickness, and thickness is between 0.4~1.2 micron.The thickness of inferior collector layer 4 is 30~70nm, and the thickness of described collector layer 5 is 60~200nm, and the thickness of described base layer 6 is 30~120nm, and the thickness of described emitter layer 8 is 30~120nm, and the thickness of described contact layer 10 is 100nm.Described base layer 6 and described emitter layer 8 common ducting layers as described quantum well active region layer 7.
Referring again to Fig. 1, and introduce NPN heterojunction bipolar transistor laser provided by the invention in detail in conjunction with following specific embodiment.
First embodiment
Present embodiment is the concrete process of growth gallium arsyl NPN heterojunction bipolar transistor laser, specifically may further comprise the steps:
1) the thick gallium arsenic resilient coating 2 of the about 500nm of growth on washed gallium arsenic substrate 1;
2) on gallium arsenic resilient coating 2, the grow indium gallium phosphorus (In of 0.4~1.2 micron thickness
0.49Ga
0.51P) or gallium aluminium arsenic (Al
xGa
1-xAs (0<x≤1)) under-clad layer 3 limits light field and electric field;
3) growth thickness is the n of 30~70nm on under-clad layer 3
+The inferior collector layer 4 of gallium arsenic;
4) growth thickness is the i type of 60~200nm or the gallium arsenic collector layer 5 that weak n type mixes on inferior collector layer 4;
5) growth thickness is the p of 80~120nm on gallium arsenic collector layer 5
+Gallium arsenic base layer 6;
6) growth i type indium gallium arsenic/gallium arsenic quantum well active area 7 on gallium arsenic base layer 6, wherein indium gallium arsenic trap thickness is 7~12nm, the thickness that gallium arsenic is built is 6~15nm, comprises 1~3 cycle.Quantum well active region layer 7 is placed on the described base layer 6, reduced on the one hand in the base layer impurity Zn to the diffusion of active region layer, reduced also on the other hand that impurity Zn helps to improve simultaneously the optics electric property of device to the diffusion of emitter layer in the base layer.Luminous by emitter injected electrons part radiation recombination in the quantum well active area, another part is collected by collector electrode, forms collector current;
7) growth thickness is the n type gallium aluminium arsenic (Al of 80~120nm on quantum well active area 7
xGa
1-xAs (0<x<1)) emitter layer 8 is with base stage gallium arsenic layer 6 common ducting layer as active area;
8) growth thickness is 0.4~1.2 micron a n type top covering 9 on gallium aluminium arsenic emitter layer 8, and material is identical with under-clad layer, and light field and electric field are limited;
9) growth thickness is the n of 100nm on top covering 9
+Gallium arsenic contact layer 10.
Second embodiment
Present embodiment is the concrete process of growth indium phosphorus base NPN heterojunction bipolar transistor laser, specifically may further comprise the steps:
1) the thick indium phosphorus resilient coating 2 of the about 500nm of growth on washed indium phosphorus substrate 1;
2) grow on the indium phosphorus resilient coating 2 indium phosphorus under-clad layer 3 of 0.4~1.2 micron thickness limits light field and electric field;
3) growth thickness is the n of 30~70nm on indium phosphorus under-clad layer 3
+The inferior collector layer 4 of indium phosphorus;
4) growth thickness is the i type of 60~200nm or the indium phosphorus collector layer 5 that weak n type mixes on inferior collector layer 4;
5) growth thickness is the p of 80~120nm on indium phosphorus collector layer 5
+InGaAsP or indium gallium aluminium arsenic base layer 6;
6) growth i type InGaAsP quantum well active region layer 7 on indium phosphorus base layer 6, emission wavelength is 1.2~1.6 microns, its trap material is an InGaAsP, thickness is 7~12nm, barrier material is InGaAsP or indium gallium aluminium arsenic (identical with base layer 6 materials), thickness is 6~15nm, comprises 1~3 cycle; Quantum well active region layer 7 is placed on the described base layer 6, reduced on the one hand in the base layer 6 impurity Zn to the diffusion of active region layer, reduced also on the other hand that impurity Zn helps to improve simultaneously the optics electric property of device to the diffusion of emitter layer in the base layer 6.Luminous by emitter injected electrons part radiation recombination in the quantum well active area, another part is collected by collector electrode, forms collector current;
7) growth thickness is the n type emitter layer 8 of 80~120nm on active region layer 7, and material is InGaAsP or indium gallium aluminium arsenic, with base layer 6 common ducting layers as active area;
8) growth thickness is 0.4~1.2 micron a n type indium phosphorus top covering 9 on emitter layer 8, and light field and electric field are limited;
9) growth thickness is the n of 100nm on top covering 9
+Indium gallium arsenic contact layer 10.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (6)
1. a NPN heterojunction bipolar transistor laser is characterized in that, comprise,
One substrate (1);
One resilient coating (2), this resilient coating (2) are grown on the described substrate (1);
One under-clad layer (3), this under-clad layer (3) are grown on the described resilient coating (2);
One inferior collector layer (4), this Asia collector layer (4) is grown on the described under-clad layer (3);
One collector layer (5), this collector layer (5) are grown on the described inferior collector layer (4);
One base layer (6), this base layer (6) are grown on the described collector layer (5);
One quantum well active region layer (7), this quantum well active region layer (7) is grown on the described base layer (6);
One emitter layer (8), this emitter layer (8) are grown on the described quantum well active region layer (7);
One top covering (9), this top covering (9) are grown on the described emitter layer (8); And
One contact layer (10), this contact layer (10) are grown on the described top covering (9);
Wherein, described base layer (6) and described emitter layer (8) are jointly as the ducting layer of described quantum well active region layer (7).
2. NPN heterojunction bipolar transistor laser according to claim 1 is characterized in that described substrate (1) is the InP substrate, or the GaAs substrate, or the GaN substrate, or the SiC substrate, or the Si substrate.
3. NPN heterojunction bipolar transistor laser according to claim 1, it is characterized in that, described quantum well active region layer (7) is positioned between described base layer (6) and the described emitter layer (8), trap material thickness is 7~12nm in this quantum well active region layer (7), barrier material thickness is 6~15nm, and the number of active area quantum well is 1~3.
4. NPN heterojunction bipolar transistor laser according to claim 1, it is characterized in that, luminous by emitter layer (8) injected electrons part radiation recombination in quantum well active region layer (7), another part is collected by inferior collector layer (4), forms collector current.
5. NPN heterojunction bipolar transistor laser according to claim 1, it is characterized in that, described under-clad layer (3) and top covering (9) are used for the light field and the electric field of device are limited, and the two has identical materials and thickness, and thickness is between 0.4~1.2 micron.
6. NPN heterojunction bipolar transistor laser according to claim 1, it is characterized in that, the thickness of described inferior collector layer (4) is 30~70nm, the thickness of described collector layer (5) is 60~200nm, the thickness of described base layer (6) is 30~120nm, the thickness of described emitter layer (8) is 30~120nm, and the thickness of described contact layer (10) is 100nm.
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US9190810B2 (en) | 2008-07-28 | 2015-11-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL |
CN101937873B (en) * | 2010-08-31 | 2012-07-11 | 中国科学院半导体研究所 | Method for making monolithic integrated device of bipolar transistor and semiconductor laser |
CN102347735A (en) * | 2011-05-19 | 2012-02-08 | 中国科学院长春光学精密机械与物理研究所 | Multilayer-film nanometer microcavity current amplifier |
US8406266B2 (en) * | 2011-08-31 | 2013-03-26 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd | Three-terminal vertical cavity surface emitting laser (VCSEL) and a method for operating a three-terminal VCSEL |
CN103647217A (en) * | 2013-12-19 | 2014-03-19 | 中国科学院半导体研究所 | PiNiN structure thyristor laser |
CN104319626A (en) * | 2014-10-11 | 2015-01-28 | 北京工业大学 | Microwave carrier directly modulated vertical-cavity surface-emitting laser |
CN104485578B (en) * | 2014-12-11 | 2017-05-10 | 中国科学院半导体研究所 | Transistor laser, and manufacturing method thereof |
CN105932542B (en) * | 2016-07-13 | 2019-02-15 | 南京航空航天大学 | A kind of transistor vertical cavity surface emitting lasers |
WO2018103645A1 (en) * | 2016-12-08 | 2018-06-14 | 西安电子科技大学 | Method of preparing npn/pnp photoelectric transistor having ga2o3/sic heterojunction |
CN111416274B (en) * | 2020-02-27 | 2021-07-02 | 电子科技大学 | Feedback type multi-pole quantum cascade ring laser |
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US5239550A (en) * | 1991-12-03 | 1993-08-24 | University Of Connecticut | Transistor lasers |
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US5239550A (en) * | 1991-12-03 | 1993-08-24 | University Of Connecticut | Transistor lasers |
US5892786A (en) * | 1997-03-26 | 1999-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Output control of vertical microcavity light emitting device |
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