CN101834097A - Static microrelay based on bistable compliant mechanism - Google Patents
Static microrelay based on bistable compliant mechanism Download PDFInfo
- Publication number
- CN101834097A CN101834097A CN201010179757A CN201010179757A CN101834097A CN 101834097 A CN101834097 A CN 101834097A CN 201010179757 A CN201010179757 A CN 201010179757A CN 201010179757 A CN201010179757 A CN 201010179757A CN 101834097 A CN101834097 A CN 101834097A
- Authority
- CN
- China
- Prior art keywords
- fixed
- bistable state
- microrelay
- static
- anchor point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to a static microrelay based on a bistable compliant mechanism, belonging to static relays used in a micro-electro mechanical system (MEMS). Bistable fully-compliant beams of the static microrelay adopt two compliant beams, wherein one end of the left compliant beam is fixed on a left insulated anchor point, and the other end of the left compliant beam is fixed on a member; one end of the right compliant beam is fixed on a right insulated anchor point, and the other end of the right compliant beam is also fixed on the member; under the voltage drive, a movable comb tooth drives the bistable fully-compliant beams to transversely move and rapidly overturn to a second stable position; a movable contact is in bridging connection with a left fixed contact and a right fixed contact which are fixed on a lower insulated anchor point so as to switch a circuit on; and the relay is rapidly skipped to return to a first stable position when an aelotropic driving voltage is applied. The static microrelay substitutes a traditional linear elasticity structure by adopting the bistable compliant mechanism so as to improve the response speed and the stable holding capacity and has the characteristics of simple mechanism, short-distance drive, low energy consumption and strong anti-jamming capacity.
Description
Technical field
The present invention relates to a kind of static microrelay, belong to the electrostatic relay that uses in the microelectromechanical systems (MEMS), be mainly used in systems such as communication engineering, information processing, Industry Control and instrument and meter based on the bistable state compliant mechanism.
Background technology
Micro electromechanical relay based on micro mechanical system (MEMS) technology switches with the switch that disconnects the realization circuit by the adhesive of metal electrode, have that size is little, quality is little, it is integrated to be easy to, wide bandwidth, response are fast, low in energy consumption, be suitable for advantages such as production in enormous quantities, have widespread demand in systems such as communication, aerospace, automatic detection instrument.
In recent years, a lot of units and research institution are devoted to the research of microrelay structure and drive form, comprise that electrostatic, heat are driving, electromagnetic type, mercury drip type etc.Because static driven has advantage simple in structure, that processing compatibility is good, its research is also extensive.Wherein the electrostatic micro-relay based on the linear elasticity element utilizes electrostatic suction power to make the float electrode bending of beam type, and two contact electrodes contact with fixed electrode and finish switch motion, has simple in structurely, and technology realizes easily.But owing to adopt the linear elasticity element, relay needs energy supply always just can be kept closed, and has the problem that contact force is little, energy consumption is high and antijamming capability is weak.
Hot mechanical type microrelay adopts thermal actuator, and by horizontal contact electrode, heater, contact and temperature compensation structure are formed, and structure is comparatively complicated, and it relies on the thermal deformation of girder construction to make contact contact, closing of circuit.Owing to adopt heat to drive distortion, this just causes the heat dissipation problem in the micro-system easily.And the intrinsic hysteresis quality of volume expansion effect has determined that its response speed is low, becomes the main cause that hinders its extensive use.Mercury drips the type microrelay, and the bubble that relies on heating to produce promotes mercury and drips the mobile circuit communication of realizing, but owing to adopt the heat driving still can produce heat dissipation problem, and also can there be many problems in the sealing of mercury with control.
Electromagnetic type microrelay and traditional electrical magnetic relay principle are basic identical, are mainly adopting electromagnetic type aspect the bistable micro-relay development, but its structure is comparatively complicated.US422390, " Electromagnetic deviceof the flat package tape " (flat packaging electromagnetic device) adopt two permanent magnets that keep flat to realize that bistable state drives.US6492887B1, " Miniaturized flat spool relay " (the flat winding relay of microminiature) proposed the flat winding relay of a kind of microminiaturization, utilizes dicyclo magnetostatic field and antisymmetry dicyclo electromagnetic field to realize that bistable electromagnetic drives.Chinese invention patent CN1452202, " bistable electromagnetic type microdrive and preparation method thereof ", this driver utilize plane thread pipeline circle to carry out Electromagnetic Drive, adopt the tiliting axis of torsion beam as moving plate.US7221817, " Beam switch structures and methods ", " a kind of beam type construction of switch and preparation method " adopts flexing bistable state girder construction to design a kind of bistable switch device.Chinese patent CN101206973, " bistable microcomputer electric relay " adopt the form of electromagnetism substrate and microballoon combination to propose a kind of microminiaturized relay that state keeps function that has.Chinese patent CN101197226A, " low threshold voltage electrostatic micro-relay " adopts broach sum of series in parallel to increase the threshold voltage that the prong number reduces microrelay, proposes a kind of microrelay that adopts Linear Elastic Structure.
Summary of the invention
The problem to be solved in the present invention is: solve the existing deficiency that exists based on the static microrelay of Linear Elastic Structure, a kind of bistable micro-relay that bistable state keeps function, short distance driving, low energy consumption and big contact force that has is provided.This microrelay has simple in structure, big stroke, response is rapid, antijamming capability is strong with contact reliable characteristics, is applicable to dual-use occasions such as communication, Industry Control and instrument and meter.
Technical solution of the present invention is: a kind of static microrelay based on the bistable state compliant mechanism, it mainly comprises movable comb and fixed fingers, moving contact and fixed contact.It also comprises the full flexible beam of bistable state, described movable comb and moving contact adopt member to link into an integrated entity, the full flexible beam of described bistable state adopts two flexible beams, one end of a left flexible beam is fixed on the left side insulation anchor point, the other end is fixed on the member, one end of another right flexible beam is fixed on the right insulation anchor point, and the other end also is fixed on the member; Under voltage drive, movable comb drives the full flexible beam transverse movement of bistable state, and generation is turned to second stable position fast, moving contact forms bridge joint with the left fixed contact and the right fixed contact that are fixed on the anchor point that insulate down, connect circuit, when applying incorgruous driving voltage, first stable position is returned in the rapid redirect of relay.
When described member was positioned on the center of movable comb, the full flexible beam of described bistable state was to make described relay do the symmetrical expression V-type mechanism of transverse movement.
The full flexible beam of described bistable state connects movable comb and moving contact, forms unsettled moving part by left side insulation anchor point and right insulation anchor points support, and and substrate between form electricity and isolate.
Described relay adopts double-decker, and wherein the full flexible beam of bistable state, movable comb, fixed fingers, moving contact, left fixed contact and right fixed contact are for adopting the superstructure of metallic conduction material; Substrate, left side insulation anchor point, right insulation anchor point and following insulation anchor point are for adopting the understructure of insulating material.
The full flexible beam of described bistable state, movable comb and fixed fingers are fixed in the substrate that has the boss that insulate by the method for double-deck MEMS electroformed nickel.
Described insulation boss adopts the way of SU-8 glue photoetching to be fixed on the oxide layer.
Above-mentioned technical scheme utilizes existing little electroforming process to make big stroke bistable state compliant mechanism, has solved the technical problem underlying of the flexible microrelay practicability of bistable state.Its manufacturing process technology is simple, is convenient to produce in enormous quantities.Its course of work is: the bistable state compliant mechanism has two stable states in stroke range, the bistable state compliant mechanism is beated between the local minimum position of two elastic potential energys under broach drives, after the center of compliant mechanism reaches the local maximum position of mechanism's elastic potential energy, energy takes place and discharges in mechanism, do not need electrostatic force, mechanism can jump to second stable position fast, realizes closing of circuit and disconnection, and whole process has the advantages that short distance drives.
The present invention compared with prior art has following advantage:
[1] the present invention adopts bistable state flexible beam mechanism to substitute traditional linear elasticity girder construction as the relay flexible member, rely on its bistable characteristic realize the relay response rapidly, good reproducibility, the characteristics of the big and low energy consumption of contact force.
[2] the present invention substitutes the electromagnetism bistable mechanism for relying on the full flexible beam structure of bistable state, make relay have that impulse stroke is big, antijamming capability is strong, the MEMS of being easy to machining characteristics simple in structure, improve the action accuracy of relay under various adverse circumstances (thunderstorm and vibration interference etc.), be applicable to multiple civil and military occasion.
[3] bistable state static driven microrelay relies on the stable state of bistable mechanism to keep the characteristics of no power consumption and quick redirect, makes relay not need intake at the closed and disconnected state, has tangible short distance and drives and characteristics of energy saving.
That this relay has is simple in structure, driving voltage is low, big stroke, low energy consumption, response rapidly, switch accurately, contact force is big, contact is reliable and the strong characteristics of antijamming capability.Because the present invention has above-mentioned advantage, therefore has application value widely in fields such as communication, Industry Control, instrument and meter and consumer electronics.
Description of drawings
Fig. 1 is a kind of static microrelay structural representation based on the bistable state compliant mechanism.
Fig. 2 is that A-A among Fig. 1 is to cutaway view.
Fig. 3 is relay second stable position.
Fig. 4 is a bistable state compliant mechanism energy diagram.
Fig. 5 is the silicon base schematic diagram.
Fig. 6 is the silicon base schematic diagram after the oxidation.
Fig. 7 is the silicon base schematic diagram with insulation boss.
Fig. 8 is the substrate schematic diagram behind the sputter crystal seed layer.
Fig. 9 is a underlying structure schematic diagram after the photoetching for the second time.
Figure 10 is the structural representation behind the electroforming process.
Figure 11 is the relay construction schematic diagram after removing photoresist for the first time.
Figure 12 is the microrelay structural representation.
Figure 13 is the static microrelay structural representation of two bistable state compliant mechanisms.
Among the figure: 1a, left flexible beam; 1b, right flexible beam; 2, movable comb; 3a, left side insulation anchor point; 3b, right insulation anchor point; 3c, the anchor point that insulate down; 4, fixed fingers; 5, moving contact; 6a, left fixed contact; 6b, right fixed contact; 7, substrate; 7a, silicon oxide layer; 8, SU-8 insulation boss; 8a, crystal seed layer; 9, photoresist model.
Embodiment
Embodiment one
Fig. 1,2 shows a kind of static microrelay based on the bistable state compliant mechanism.Among the figure, movable comb 2 and moving contact 5 adopt member 2a to link into an integrated entity, the full flexible beam of bistable state adopts two flexible beams, the end of a left flexible beam 1a is fixed on the left side insulation anchor point 3a, the other end is fixed on the member 2a, the end of another right flexible beam 1b is fixed on the right insulation anchor point 3b, and the other end also is fixed on the member 2a.Two stable position of the full flexible beam of bistable state make microrelay be in two states of closed and disconnected respectively.Movable comb 2 and fixed fingers 4 numbers equate and are spaced that the electrostatic force that is produced drives the actuating of relay.Be left fixed contact 6a and right fixed contact 6b on the insulation anchor point 3c under being fixed under the moving contact 5, left fixed contact 6a and right fixed contact 6b are connected in the control circuit by lead.Left side insulation anchor point 3a, right insulation anchor point 3b, insulate anchor point 3c, silicon oxide layer 7a and substrate 7 is insulating material down, guarantees that the electricity between integrated circuit and the microrelay is isolated.
Shown in Fig. 3,4, after applying voltage drive, movable comb 2 promotes the full flexible beam transverse movement of bistable state, after moving to certain position, the elastic potential energy that the full flexible beam of bistable state is stored reaches maximum, under the situation that does not need driven, jump to second stable position then rapidly, have the advantages that short distance drives.As shown in Figure 4, second stable position is arranged on the position that elastic potential energy does not discharge fully in the energy diagram of bistable state compliant mechanism, rely on the elastic force increase moving contact 5 of bistable state compliant mechanism and the contact force between left fixed contact 6a and the right fixed contact 6b, reduce contact resistance, make contact reliable.In addition, relay spacing between moving contact 5 and left fixed contact 6a and the right fixed contact 6b under off-state is bigger, makes relay have big stroke and the strong characteristics of antijamming capability.
The operating state of microrelay is shown in Fig. 1,3,4, and Fig. 1 is first stable position for microrelay, and relay keeps off-state.Under the voltage drive effect, the drive part of being made up of movable comb 2 and fixed fingers 4 provides electrostatic force for relay, promote the center transverse movement of bistable state compliant mechanism, behind the mechanism's elastic potential energy maximum point that reaches as shown in Figure 4, elastic potential energy discharges, redirect takes place in mechanism, and moving contact 5 contacts turning circuit with left fixed contact 6a with right fixed contact 6b.Microrelay is in second stable position, as shown in Figure 3.According to Fig. 4, mechanism needs less energy input just can reach the elastic potential energy maximum, apply less reverse drive voltages, broach electric capacity provides opposition pulling bistable state compliant mechanism center to break away from left fixed contact 6a and right fixed contact 6b, after crossing the maximum potential position, mechanism jumps to first stable position rapidly, and promptly relay is in off-state.
Shown in Fig. 5-12, the present invention adopts silicon face process technology and little electroforming process way of combining to realize the device development, has the advantages that technological process is simple, cost is low, and has improved the reliability of relay.The material that adopts in the electroforming is a nickel, and the pliability of nickel is better, has strengthened the useful life and the stability of bistable state flexible beam.Specific design parameter: bottom photoetching glue victim layer thickness 10-20 micron; Electroformed nickel thickness 20-30 micron; The thickness 500-800 nanometer of sputtered titanium crystal seed layer; The thickness 500-800 nanometer of sputter copper crystal seed layer; The width of bistable state flexible beam is the 5-10 micron, and length is the 50-200 micron; The length of whole V-type beam relay is the 300-1000 micron.Concrete manufacturing process flow is as follows:
(1) cleaning silicon chip is as substrate 7, with reference to figure 5;
(2) high-temperature oxydation forms insulating oxide 7a, with reference to figure 6 in substrate;
(3) form insulation boss 8 behind the photoetching development, as shown in Figure 7;
(4), on insulation boss 8 and oxide layer 7a, form crystal seed layer 8a, as shown in Figure 8 by sputter;
(5), on crystal seed layer 8a, form the photoresist model 9 that needs electroforming, as shown in Figure 9 by photoetching for the second time, exposure imaging;
(6) substrate is put into the electroforming solution electroforming, form relay basic structure, as shown in figure 10;
(7) relay construction after removing photoresist for the first time, as shown in figure 11;
(8) structure discharges, and forms the microrelay device, as shown in figure 12;
Embodiment two
Figure 13 shows the static microrelay structural representation with two bistable state compliant mechanisms.On the basis of embodiment one, adopt the MEMS integrated technique that two bistable micro-relay are realized multiple spot control.When applying driving voltage, the movable comb 2 of top drives moving contact 5 transverse movements of top, the fixed contact of conducting top, the conducting of relay in the realization.Simultaneously, the moving contact 5 that the movable comb 2 of below drives the below produces transverse movement, and the fixed contact of closed below realizes relay conducting down.The fixed fingers 4 of two relays applies voltage in the same way up and down, and the input voltage direction of the movable comb 2 above only needing to change and the movable comb 2 of below can realize the action control of relay up and down.
Claims (6)
1. static microrelay based on the bistable state compliant mechanism, it mainly comprises movable comb (2) and fixed fingers (4), moving contact (5) and fixed contact; It is characterized in that: it also comprises the full flexible beam of bistable state, described movable comb (2) and moving contact (5) adopt member (2a) to link into an integrated entity, the full flexible beam of described bistable state adopts two flexible beams, one end of a left flexible beam (1a) is fixed on the left side insulation anchor point (3a), the other end is fixed on the member (2a), one end of another right flexible beam (1b) is fixed on the right insulation anchor point (3b), and the other end also is fixed on the member (2a); Under voltage drive, movable comb (2) drives the full flexible beam transverse movement of bistable state, and generation is turned to second stable position fast, moving contact (5) forms bridge joint with the left fixed contact (6a) and the right fixed contact (6b) that are fixed on the anchor point (3c) that insulate down, connect circuit, when applying incorgruous driving voltage, first stable position is returned in the rapid redirect of relay.
2. a kind of static microrelay according to claim 1 based on the bistable state compliant mechanism, it is characterized in that: when described member (2a) was positioned on the center of movable comb (2), the full flexible beam of described bistable state was to make described relay do the symmetrical expression V-type mechanism of transverse movement.
3. a kind of static microrelay according to claim 1 based on the bistable state compliant mechanism, it is characterized in that: the full flexible beam of described bistable state connects movable comb (2) and moving contact (5), support to form unsettled moving part by left side insulation anchor point (3a) and right insulation anchor point (3b), and and substrate (7) between form the electricity isolation.
4. a kind of static microrelay according to claim 1 based on the bistable state compliant mechanism, it is characterized in that: described relay adopts double-decker, and wherein the full flexible beam of bistable state, movable comb (2), fixed fingers (4), moving contact (5), left fixed contact (6a) and right fixed contact (6b) are for adopting the superstructure of metallic conduction material; Substrate (7), left side insulation anchor point (3a), right insulation anchor point (3b) and following insulation anchor point (3c) are for adopting the understructure of insulating material.
5. a kind of static microrelay based on the bistable state compliant mechanism according to claim 1 is characterized in that: the full flexible beam of described bistable state, movable comb (2) and fixed fingers (4) are fixed in the substrate (7) that has insulation boss (8) by the method for double-deck MEMS electroformed nickel.
6. a kind of static microrelay based on the bistable state compliant mechanism according to claim 5 is characterized in that: described insulation boss (8) adopts the way of SU-8 glue photoetching to be fixed on the oxide layer (7a).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010179757A CN101834097A (en) | 2010-05-15 | 2010-05-15 | Static microrelay based on bistable compliant mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010179757A CN101834097A (en) | 2010-05-15 | 2010-05-15 | Static microrelay based on bistable compliant mechanism |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101834097A true CN101834097A (en) | 2010-09-15 |
Family
ID=42718130
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010179757A Pending CN101834097A (en) | 2010-05-15 | 2010-05-15 | Static microrelay based on bistable compliant mechanism |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101834097A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103198922A (en) * | 2013-04-15 | 2013-07-10 | 北方工业大学 | Comb-tooth capacitor accurate assembly method based on bi-stable state compliant mechanism |
| CN104241035A (en) * | 2014-09-01 | 2014-12-24 | 清华大学 | Double-section type electrostatic driving micromechanical switch |
| CN104459997A (en) * | 2014-12-02 | 2015-03-25 | 深圳市盛喜路科技有限公司 | MEMS tunable optical driver and manufacturing method |
| CN110600289A (en) * | 2019-08-30 | 2019-12-20 | 中国传媒大学 | Resettable MEMS bistable trigger |
| CN110989163A (en) * | 2019-12-06 | 2020-04-10 | 西北工业大学 | MEMS linear electrostatic driving technology |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303885B1 (en) * | 2000-03-03 | 2001-10-16 | Optical Coating Laboratory, Inc. | Bi-stable micro switch |
| US6360033B1 (en) * | 1999-11-25 | 2002-03-19 | Electronics And Telecommunications Research Institute | Optical switch incorporating therein shallow arch leaf springs |
| WO2005015595A1 (en) * | 2003-08-07 | 2005-02-17 | Fujitsu Limited | Micro switching element and method of manufacturing the element |
| JP2005074561A (en) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Works Ltd | Electrostatic micro-actuator and optical switch |
| US20060087390A1 (en) * | 2004-10-21 | 2006-04-27 | Fujitsu Component Limited | Electrostatic relay |
| CN1842885A (en) * | 2003-08-26 | 2006-10-04 | 松下电工株式会社 | Electrostatically driven latchable actuator system |
| CN101197226A (en) * | 2006-12-08 | 2008-06-11 | 合肥工业大学 | Low threshold voltage electrostatic micro-relay |
-
2010
- 2010-05-15 CN CN201010179757A patent/CN101834097A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6360033B1 (en) * | 1999-11-25 | 2002-03-19 | Electronics And Telecommunications Research Institute | Optical switch incorporating therein shallow arch leaf springs |
| US6303885B1 (en) * | 2000-03-03 | 2001-10-16 | Optical Coating Laboratory, Inc. | Bi-stable micro switch |
| WO2005015595A1 (en) * | 2003-08-07 | 2005-02-17 | Fujitsu Limited | Micro switching element and method of manufacturing the element |
| CN1842885A (en) * | 2003-08-26 | 2006-10-04 | 松下电工株式会社 | Electrostatically driven latchable actuator system |
| JP2005074561A (en) * | 2003-08-29 | 2005-03-24 | Matsushita Electric Works Ltd | Electrostatic micro-actuator and optical switch |
| US20060087390A1 (en) * | 2004-10-21 | 2006-04-27 | Fujitsu Component Limited | Electrostatic relay |
| CN101197226A (en) * | 2006-12-08 | 2008-06-11 | 合肥工业大学 | Low threshold voltage electrostatic micro-relay |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103198922A (en) * | 2013-04-15 | 2013-07-10 | 北方工业大学 | Comb-tooth capacitor accurate assembly method based on bi-stable state compliant mechanism |
| CN103198922B (en) * | 2013-04-15 | 2016-11-23 | 北方工业大学 | A kind of comb electric capacity Precise Assembling Method based on bi-stable state compliant mechanism |
| CN104241035A (en) * | 2014-09-01 | 2014-12-24 | 清华大学 | Double-section type electrostatic driving micromechanical switch |
| CN104241035B (en) * | 2014-09-01 | 2016-08-24 | 清华大学 | A kind of two section type electrostatic drive micro-machinery switch |
| CN104459997A (en) * | 2014-12-02 | 2015-03-25 | 深圳市盛喜路科技有限公司 | MEMS tunable optical driver and manufacturing method |
| CN110600289A (en) * | 2019-08-30 | 2019-12-20 | 中国传媒大学 | Resettable MEMS bistable trigger |
| CN110600289B (en) * | 2019-08-30 | 2021-04-13 | 中国传媒大学 | Resettable MEMS bistable trigger |
| CN110989163A (en) * | 2019-12-06 | 2020-04-10 | 西北工业大学 | MEMS linear electrostatic driving technology |
| CN110989163B (en) * | 2019-12-06 | 2023-03-31 | 西北工业大学 | MEMS linear electrostatic driving technology |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6734770B2 (en) | Microrelay | |
| CN101834097A (en) | Static microrelay based on bistable compliant mechanism | |
| US8354902B2 (en) | Structure of spring and actuator using the spring | |
| CN101621261B (en) | Flexible composite beam electric heating microdriver based on U+V shape | |
| JPH09198983A (en) | Small-sized device | |
| CN201936819U (en) | Static microrelay based on bistable flexible mechanism | |
| EP2200063B1 (en) | Micro-electromechanical system switch | |
| KR20090068173A (en) | Mems switch with improved standoff voltage control | |
| CN101544347B (en) | Bidirectional bistable microdrive based on electrothermal and electromagnetic drive | |
| CN102906846A (en) | Electromechanical switch device and method of operating the same | |
| CN102386021A (en) | Micro-mechanical capacitance two-way switch | |
| CN102543590B (en) | Low-power-consumption high-stability magnetic bi-stable micro-relay | |
| CN101276705B (en) | Radio frequency micro electromechanical system switch of bistable monocrystaline silicon beam | |
| CN100552855C (en) | The MEMS electromagnetic relay | |
| CN105174199B (en) | A kind of micro- anchor drive of low energy consumption | |
| US20220293383A1 (en) | Capacitively operable mems switch | |
| US20040201321A1 (en) | High frequency latching relay with bending switch bar | |
| CN101276708B (en) | Radio frequency micro electromechanical system switch of electrostatic push-draw type monocrystaline silicon beam | |
| CN100456411C (en) | Magnetic bistable micromachine relay with convenience to integrated manufacture | |
| JP2004319488A (en) | Electric relay | |
| CN204130459U (en) | The electromagnetism bistable state MEMS relay that a kind of height is integrated | |
| KR101901212B1 (en) | Heat-driving switch structure and method for manufacturing the same | |
| CN111508771A (en) | Magnetic control shape memory alloy AC contactor | |
| CN111986956A (en) | Contact control switch is received to graphite alkene | |
| CN1127106C (en) | Radio frequency micro electromechanical system switch of silicon, metal and medium film bridge |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20100915 |