CN101877318B - Frame type direct copper-ceramic bonding plate and manufacturing method thereof - Google Patents
Frame type direct copper-ceramic bonding plate and manufacturing method thereof Download PDFInfo
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- CN101877318B CN101877318B CN2009101386111A CN200910138611A CN101877318B CN 101877318 B CN101877318 B CN 101877318B CN 2009101386111 A CN2009101386111 A CN 2009101386111A CN 200910138611 A CN200910138611 A CN 200910138611A CN 101877318 B CN101877318 B CN 101877318B
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Abstract
The invention discloses a frame type direct copper-ceramic bonding plate and a manufacturing method thereof. The frame type direct copper-ceramic bonding plate comprises a ceramic substrate and a ceramic frame; the ceramic frame is covered on the ceramic substrate, provided with a copper layer with preset patterns and a bottom surface, and bonded with the copper layer. The manufacturing method of the frame type direct copper-ceramic bonding plate comprises the following steps of: firstly, etching the copper layer to form a preset pattern with a plurality of positioning grooves on the ceramic substrate of which the surface is bonded with the copper layer; secondly, forming positioning projections corresponding to the positioning grooves at the bottom of the ceramic frame, and arranging the ceramic frame on the ceramic substrate; thirdly, positioning the ceramic frame by the positioning projections and the positioning grooves, thermally treating the ceramic frame, directly bonding the ceramic frame and the copper layer to fix the ceramic frame on the ceramic substrate. Thus, the invention has no need of using an adhesive and avoids the ageing and the deterioration of the adhesive, so that the bonding performance and the sealing performance of the ceramic frame and the ceramic substrate are more stable.
Description
Technical field
The present invention relates to a kind of frame type direct copper-ceramic bonding plate and manufacturing approach thereof, particularly a kind of in frame type direct copper-ceramic bonding plate and the manufacturing approach thereof of covering the ceramic framework of direct joint on the ceramic substrate of copper.
Background technology
For avoiding electronic component to make moist or contaminated its electrical functionality that influences, need be with electronic component in addition packaging protection, especially semiconductor element, light-emitting diode (LED) for example usually can be with its encapsulation to increase useful life.
Consult Fig. 1, the encapsulating structure of common a kind of light-emitting diode is provided with a framework 92 with a ccontaining chip (figure does not show) on a substrate 91, and lid is established lens 93 again, and chip is sealed in wherein.General substrate 91 can be ceramic wafer, which is provided with line pattern and is electrically connected for chip.Framework 92 can be plastic cement system or metallic, is fixed on the substrate 91 through cement (glue), yet; Because chip can generate heat when using; Cause the cement easy ageing rotten, and make the sealing variation of chip or cause framework 92 to break away from substrate 91, influence the useful life of element.In addition, when metal framework 92 is provided with, also must note with substrate 91 on line pattern insulation, avoiding short circuit, thereby make installation procedure comparatively complicated.
Summary of the invention
The problem that institute of the present invention desire solves is promptly that aforementioned ceramic framework is fixed the problem of the cement aged deterioration that causes and used the metallic framework to insulate through cement and causes the installation procedure complicated problems.
The present invention solves the means of foregoing problems, and a ceramic framework is directly closed mode with hot joining, is fixed on one and covers on the ceramic substrate of copper; Whereby, can avoid the use of cement, and solve the rotten problem of cement easy ageing; And the ceramic framework of use insulation itself is compared to the metal framework; Can consider to cause problem of short-circuit, make installation procedure comparatively easy.
The purpose of this invention is to provide a kind of need not cement and can ceramic framework be fixed on the manufacturing approach of the frame type direct copper-ceramic bonding plate on the ceramic substrate.
Another object of the present invention, provide a kind of need not cement and be fixed with the frame type direct copper-ceramic bonding plate of ceramic framework.
So the manufacturing approach of frame type direct copper-ceramic bonding plate of the present invention comprises step:
The ceramic substrate of one surface-coated copper layer is provided;
One ceramic framework is provided, and this pottery framework has a plurality of positioning convex portion that convexedly stretch in the bottom surface;
The copper layer of this ceramic substrate of etching to be forming a predetermined pattern, and this predetermined pattern comprises a plurality of location indentations that match with this positioning convex portion respectively respectively;
This pottery framework is placed on the copper layer of this ceramic substrate, and match with said location indentations this pottery framework location through said positioning convex portion; And
Heat-treat, this pottery framework is engaged with the copper layer of this ceramic substrate.
Preferably, the copper layer of this ceramic substrate of etching also comprises earlier at this copper layer light-sensitive surface that is covered with the step that forms a predetermined pattern, via exposure imaging on this copper layer the position of this predetermined pattern of definition.
Preferably, this predetermined pattern also comprises the conducting wire, and this conducting wire and said location indentations are accomplished in same step, can save processing procedure time and cost.
Be applicable to ceramic framework of the present invention, its shape can be for example square, circle or polygon, and its material can be for example aluminium oxide, aluminium nitride or titanium oxide.
The aforementioned hot treatment step; General direct copper joining technique capable of using (is called for short DCB; Direct Copper Bonding or be called for short DBC, Direct Bonding Copper), be lower than metallic copper fusing point (about 1083 ℃) and be higher than copper and the temperature range of cupric oxide eutectic temperature (1063 ℃) is heat-treated one; And should the pottery framework and this copper layer carry out hot joining and close, wherein this copper laminar surface is a cupric oxide.
Frame type direct copper-ceramic bonding plate of the present invention comprises: a ceramic substrate; One is coated on this ceramic substrate and has the copper layer of a predetermined pattern and the ceramic framework that a bottom surface engages with this copper layer.
Preferably, this predetermined pattern comprises a plurality of location indentations, and should the pottery framework have a plurality of positioning convex portion that convexedly stretch in the bottom surface, and respectively this positioning convex portion correspondence is located at respectively in this location indentations.And this predetermined pattern also can comprise the conducting wire.
Frame type direct copper-ceramic bonding plate of the present invention, this pottery framework directly engages with this copper layer with heat treatment.
Frame type direct copper-ceramic bonding plate of the present invention, this pottery framework are square, circle or polygon.
Frame type direct copper-ceramic bonding plate of the present invention, the material of this pottery framework are aluminium oxide, aluminium nitride or titanium oxide.
Frame type direct copper-ceramic bonding plate of the present invention; It is fixing that ceramic framework is directly engaged with the copper layer; Need not use cement and can avoid the problem of cement aged deterioration; Can make ceramic framework and ceramic substrate have more lasting associativity and sealing, and ceramic framework itself is the insulation material, can avoid metal material easily conduction cause problem of short-circuit.The manufacturing approach of frame type direct copper-ceramic bonding plate of the present invention can form a plurality of location indentations, and make ceramic framework bottom surface have corresponding positioning convex portion when make the copper layer that covers the copper ceramic substrate form the conducting wire in the lump; Easily with ceramic framework location; Can save processing procedure time and cost, utilize direct copper joining technique that ceramic framework is directly engaged again, can ceramic framework be fixed; And need not use cement; And compared to the metal framework, need not consider problem of short-circuit, make processing procedure comparatively simple and convenient.
Description of drawings
Fig. 1 is a sketch map, and the encapsulating structure of an existing light-emitting diode is described.
Fig. 2 is a flow chart, and a preferred embodiment of the manufacturing approach of frame type direct copper-ceramic bonding plate of the present invention is described.
Fig. 3 is a sketch map, and the implementation step that forms a plurality of location indentations in this preferred embodiment is described.
Fig. 4 is a sketch map, and the bottom view of a ceramic framework of this preferred embodiment is described.
Fig. 5 is a sketch map, and a preferred embodiment of frame type direct copper-ceramic bonding plate of the present invention is described.
Embodiment
Below in conjunction with accompanying drawing and embodiment the present invention is elaborated.
Consult Fig. 2 to Fig. 5, the manufacturing approach of frame type direct copper-ceramic bonding plate of the present invention and a preferred embodiment of frame type direct copper-ceramic bonding plate are described.
Shown in Figure 2 is the flow chart of making the implementation step of frame type direct copper-ceramic bonding plate 100 (as shown in Figure 5), specifies as follows:
Cooperate and consult Fig. 3; Of step 101, the ceramic substrate 3 of a surface-coated copper layer 2 is provided, in the present embodiment earlier; Ceramic substrate 3 materials are aluminium oxide; Copper layer 2 engages with ceramic substrate 3 with direct copper joining technique (DBC), though the present embodiment act is the ceramic substrate 3 of single face copper layer 2, the ceramic substrate of two-sided copper layer is also applicable.Step 102 is said for another example, and the copper layer 2 of etching ceramic substrate 3 is to form a predetermined pattern 2 '.Etching step can be subdivided into exposure imaging and two stages of etching; Exposure imaging step wherein is at copper layer 2 lining one light-sensitive surface 4 (among Fig. 3 and the light-sensitive surface of not shown good working condition, the formed pattern in back that develops only is shown); Utilize the exposure imaging processing procedure again; The pattern that will have the light shield (figure do not show) of predetermined pattern 2 ' is passed to light-sensitive surface 4, on copper layer 2, define the position of predetermined pattern 2 ' through light-sensitive surface 4, and light-sensitive surface 4 is also as etch protection layer.During etched copper 2, an etching does not have the exposed copper layer 2 of light-sensitive surface 4 linings and is etched to ceramic substrate 3 is exposed, and etching removes light-sensitive surface 4 after accomplishing, and promptly forms predetermined pattern 2 '.In the present embodiment; Predetermined pattern 2 ' comprises conducting wire 21 ' and a plurality of location indentations 22 '; Wherein conducting wire 21 ' is line areas 41 (part that light-sensitive surface 4 is covered) in light-sensitive surface 4 defined figures, and said location indentations 22 ' corresponding recess district 42 (for the part that in the line areas 41 copper layer 2 is exposed), said location indentations 22 ' can be with reference to the shape size of ceramic framework 5 (consulting Fig. 4) and the design of conducting wire 21 '; Select appropriate location and quantity; Make location indentations 22 ' not influence conducting wire 21 ', and can supply ceramic framework 5 positioning instants can, do not exceed with present embodiment.
Consult Fig. 4, of step 103, a ceramic framework 5 is provided, ceramic framework 5 has a plurality of positioning convex portion 52 that convexedly stretch in bottom surface 51.Said positioning convex portion 52 and said location indentations 22 ' match merge corresponding one by one, make each positioning convex portion 52 respectively correspondence be placed in one and locate in the recess 22 '.In the present embodiment, ceramic framework 5 is square, but it also can be circle or polygon, is decided by user demand.In addition, in the present embodiment, the material of ceramic framework 5 is an aluminium oxide, but it also can be aluminium nitride or titanium oxide, and the ceramic material that visual user demand is selected to be fit to copper directly engages gets final product, and does not exceed with present embodiment.
Consult Fig. 5; Of step 104; Ceramic framework 5 is placed on the copper layer 2 (having formed predetermined pattern 2 ') of ceramic substrate 3; And match with said location indentations 22 ' ceramic framework 5 location through said positioning convex portion 52, that is, each positioning convex portion 52 correspondence is located in each location indentations 22 '.Step 105 is said for another example, heat-treats, and ceramic framework 5 is engaged with the copper layer 2 of ceramic substrate 3.In the present embodiment; After pottery framework 5 places ceramic substrate 3 and location, in oxygen content is lower than the high temperature furnace of 10ppm, heat-treat, utilize direct copper joining technique (DCB); Be lower than metallic copper fusing point (about 1083 ℃) and be higher than copper and the temperature range of cupric oxide eutectic temperature (1063 ℃) is heat-treated; Make the bottom surface 51 of ceramic framework 5 produce eutectic bond, ceramic framework 5 is directly engaged and is fixed on the ceramic substrate 3 with copper layer 2, form frame type direct copper-ceramic bonding plate 100 with copper layer 2.
In sum; Frame type direct copper-ceramic bonding plate 100 of the present invention; Ceramic framework 5 is directly engaged with copper layer 2 fix, need not use cement and can avoid the problem of cement aged deterioration, can make ceramic framework 5 and ceramic substrate 3 have more lasting associativity and sealing; And 5 of ceramic frameworks are as the insulation material, can avoid metal material easily conduction cause problem of short-circuit.The manufacturing approach of frame type direct copper-ceramic bonding plate 100 of the present invention can form a plurality of location indentations 22 ' in the lump when the copper layer that makes ceramic substrate 32 formation conducting wire 21 '; And the bottom surface 51 that makes ceramic framework 5 has corresponding positioning convex portion 52, with ceramic framework 5 location, can save processing procedure time and cost easily; Utilize direct copper joining technique that ceramic framework 5 is directly engaged with copper layer 2 again; Can ceramic framework 5 be fixed, and need not use cement, and compared to the metal framework; Need not consider problem of short-circuit, make processing procedure comparatively simple and convenient.
Claims (10)
1. the manufacturing approach of a frame type direct copper-ceramic bonding plate is characterized in that, comprises step:
The ceramic substrate of one surface-coated copper layer is provided;
One ceramic framework is provided, and this pottery framework has a plurality of positioning convex portion that convexedly stretch in the bottom surface;
The copper layer of this ceramic substrate of etching to be forming a predetermined pattern, and this predetermined pattern comprises a plurality of location indentations that match with this positioning convex portion respectively respectively;
This pottery framework is placed on the copper layer of this ceramic substrate, and match with said location indentations this pottery framework location through said positioning convex portion; And
Heat-treat, this pottery framework is engaged with the copper layer of this ceramic substrate.
2. the manufacturing approach of frame type direct copper-ceramic bonding plate according to claim 1 is characterized in that, this predetermined pattern also comprises the conducting wire.
3. the manufacturing approach of frame type direct copper-ceramic bonding plate according to claim 1 is characterized in that, this pottery framework is square, circle or polygon.
4. the manufacturing approach of frame type direct copper-ceramic bonding plate according to claim 1 is characterized in that, the material of this pottery framework is aluminium oxide, aluminium nitride or titanium oxide.
5. the manufacturing approach of frame type direct copper-ceramic bonding plate according to claim 1; It is characterized in that; The copper layer of this ceramic substrate of etching also comprises earlier at this copper layer light-sensitive surface that is covered with the step that forms a predetermined pattern, via exposure imaging on this copper layer the position of this predetermined pattern of definition.
6. frame type direct copper-ceramic bonding plate; Comprise: a ceramic substrate and is coated on this ceramic substrate and has the copper layer of a predetermined pattern; It is characterized in that this frame type direct copper-ceramic bonding plate also comprises a ceramic framework, and bottom surface that should the pottery framework engages with this copper layer;
Wherein, this predetermined pattern comprises a plurality of location indentations, and should the pottery framework have a plurality of positioning convex portion that convexedly stretch in the bottom surface, and respectively this positioning convex portion correspondence is located at respectively in this location indentations.
7. frame type direct copper-ceramic bonding plate according to claim 6 is characterized in that this predetermined pattern also comprises the conducting wire.
8. frame type direct copper-ceramic bonding plate according to claim 6 is characterized in that, this pottery framework directly engages with this copper layer with heat treatment.
9. frame type direct copper-ceramic bonding plate according to claim 6 is characterized in that, this pottery framework is square, circle or polygon.
10. frame type direct copper-ceramic bonding plate according to claim 6 is characterized in that, the material of this pottery framework is aluminium oxide, aluminium nitride or titanium oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101386111A CN101877318B (en) | 2009-04-30 | 2009-04-30 | Frame type direct copper-ceramic bonding plate and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101386111A CN101877318B (en) | 2009-04-30 | 2009-04-30 | Frame type direct copper-ceramic bonding plate and manufacturing method thereof |
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| CN101877318A CN101877318A (en) | 2010-11-03 |
| CN101877318B true CN101877318B (en) | 2012-02-29 |
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| CN2009101386111A Expired - Fee Related CN101877318B (en) | 2009-04-30 | 2009-04-30 | Frame type direct copper-ceramic bonding plate and manufacturing method thereof |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832142A (en) * | 2011-06-14 | 2012-12-19 | 弘凯光电股份有限公司 | Manufacturing method for packaging structure |
| CN102569619B (en) * | 2011-12-30 | 2016-11-23 | 鸿利智汇集团股份有限公司 | A kind of manufacture method of COB light source |
| CN103311193B (en) * | 2012-03-06 | 2016-01-20 | 深圳赛意法微电子有限公司 | Semiconductor power module package structure and preparation method thereof |
| CN104900620A (en) * | 2014-03-03 | 2015-09-09 | 西安永电电气有限责任公司 | PCB fixing structure of plastic-packaging type IPM and fixing method thereof |
| CN107295755A (en) | 2016-04-13 | 2017-10-24 | 讯芯电子科技（中山）有限公司 | Cover the manufacture method of copper ceramic substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6827503B2 (en) * | 2000-12-01 | 2004-12-07 | Shipley Company, L.L.C. | Optical device package having a configured frame |
| US6903456B2 (en) * | 2003-10-08 | 2005-06-07 | Tong Hsing Electric Industries, Ltd. | Package carrier having multiple individual ceramic substrates |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6827503B2 (en) * | 2000-12-01 | 2004-12-07 | Shipley Company, L.L.C. | Optical device package having a configured frame |
| US6903456B2 (en) * | 2003-10-08 | 2005-06-07 | Tong Hsing Electric Industries, Ltd. | Package carrier having multiple individual ceramic substrates |
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| CN101877318A (en) | 2010-11-03 |
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Owner name: TONGXIN ELECTRONIC INDUSTRY CO., LTD. Free format text: FORMER OWNER: HCS HIGH CONDUCTION SCIENTIFIC CO., LTD. Effective date: 20120903 |
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Effective date of registration: 20120903 Address after: Taipei City, Taiwan, China Patentee after: Tong Hsing Electronic Industries, Ltd. Address before: China Taiwan Taoyuan County Patentee before: High Conduction Scientific Co., Ltd. |
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Granted publication date: 20120229 Termination date: 20200430 |