CN101901794B - Plastic lead frame structure with reflective and conductor metal layer and preparation method thereof - Google Patents

Plastic lead frame structure with reflective and conductor metal layer and preparation method thereof Download PDF

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Publication number
CN101901794B
CN101901794B CN 200910143720 CN200910143720A CN101901794B CN 101901794 B CN101901794 B CN 101901794B CN 200910143720 CN200910143720 CN 200910143720 CN 200910143720 A CN200910143720 A CN 200910143720A CN 101901794 B CN101901794 B CN 101901794B
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lead frame
pedestal
plastic
frame structure
laser
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CN101901794A (en
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江振丰
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Guanghong Precision Co Ltd
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Guanghong Precision Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention provides a plastic lead frame structure with a reflective and conductor metal layer and a preparation method thereof. The method comprises the following steps of: injecting to form a base made of a metal catalyst-containing plastic or an organic matter-containing plastic, wherein a staggered and connected carrier embedded groove is formed at the periphery of the base; forming a carrier which does not contain a metal catalyst plastic or organic matter plastic by using the double-injection technology; inclining downwards from the top of the base to form an accommodating space for accommodating a light-emitting diode; depositing an interfacial layer electroless copper or a nickel plating layer on the surface of the base, and stripping partial interfacial layer so as to form an insulating line by using the laser technology to make the insulating line connected with the carrier; and electroplating or chemically depositing copper, nickel, silver or gold, and other metal layers to form the plastic lead frame structure with the reflective and conductor metal layer.

Description

Plastic lead frame structure of tool reflection and conductor metal layer and preparation method thereof
Technical field
The present invention relates to a kind of lead frame technology of preparing of light-emitting diode; Particularly be meant the plastic lead frame structure of a kind of tool reflection and conductor metal layer; Use and simplify processing procedure and can reduce cost; Further also can promote its reflection efficiency and increase wire glass, to constitute the conducting wire frame structure of a high heat-conducting effect.
Background technology
Existing LED conducting wire frame; Generally be that tablet with conductive material is master's (as: copper, copper alloy or aluminium etc.), form the stock of lead frame through punching press, subsequently with electroplating processes; The metal level (like tin, silver, gold etc.) that has high conductivity at lead frame stock electroplating surface one deck; Utilize embedded ejection forming technique (Insert Molding) subsequently, form the LED conducting wire frame of cup-shaped, but the reflector space of said cup-shaped lead frame can't effectively provide the reflecting effect of metal level.
In addition, also have with the laser direct activation (Laser Direct Structuring, LDS) processing procedure is applied on the lead frame of light-emitting diode; This processing procedure shortcoming is used laser direct activation processing procedure proprietary material for needing, and after this material penetrated, its electrode and reflector space used laser to carry out surface active; Because of laser can make surface roughening, and the area of laser is excessive, and restrictions such as angle and processing procedure time are arranged because of its laser on the inclined-plane; And the reflection angle that can cause its original design of the roughness behind the laser activation and reflecting brightness difference to some extent, in addition, 3D stereo laser process equipment costliness; Process time is oversize, and cost is too high.
Moreover, existing person also have in addition with low temperature co-fired multi-layer ceramics (Low-Temperature Co-firedCeramics, LTCC); Because pottery is similar with the material of silicon, can be connected with wafer, its heat conduction and heat-resistance coefficient are all fine; But low temperature co-fired multi-layer ceramics it need the temperature about 900 degree to carry out sintering, and it has the different phenomenon of shrinkage, is prone to increase electrical variable; And the ceramic processing cost is expensive, and a large amount of production costs descend and are difficult for.
Though there is the dealer to consider to make lead frame in addition with extra quality emission technology; But in existing extra quality emission technology, PCK method and SKW method dual mode are arranged respectively, wherein the processing procedure mode of PCK method is in first time during ejection formation; Use electrodepositable and via the corrected plastics of catalystization; In second time during ejection formation, use the not plastic production of electrodepositable, the surface of element is with after etching activation and metallization.As for the processing procedure mode of SKW method is to use the plastics of electrodepositable during ejection formation in the first time; With the after etching frosting of ejection formation for the first time, and with palladium (Pd) with surface active, element is placed in the mould; And carry out ejection formation for the second time, afterwards with the surface metalation of element.These two kinds of methods are that imperceptible circuit processing upward limits because of extra quality ejaculation technology to some extent, and can't effectively form imperceptible circuit.
In other words, existing LED conducting wire frame or complicated because of processing procedure and can't reduce its cost of manufacture; Again or because of making rough surface behind the laser activation; And cause reaching the reflection angle and the reflecting brightness of original design, and then have influence on its reflection efficiency, and can't be applicable in the insulated circuit pattern of micronization; Therefore how to provide a kind of have concurrently be easy to make, the lead frame of characteristics such as low cost and high reflectance, be the task of top priority of present industry.
Therefore; The inventor deeply inquires into to the problem of aforementioned existing lead frame; And research and development and manufacturing experience through being engaged in related industry for many years, actively seek solution, through the research of constantly making great efforts with study; Finally plastic lead frame structure of reflection and conductor metal layer and preparation method thereof is provided in successful exploitation, to solve inconvenience that problem was caused and puzzlements such as existing lead frame processing procedure complicacy, reflection efficiency and heat conduction, conduction.
Summary of the invention
The object of the invention promptly is to provide the plastic lead frame structure of a kind of reflection and conductor metal layer, with the lifting reflection efficiency, and can freely design trickle insulated circuit pattern.
An of the present invention purpose is to be to provide a kind of tool to reflect and the preparation method of the plastic lead frame structure of conductor metal layer, with the simplification processing procedure, and can make in a large number, to reduce its cost of manufacture.
Can reach the tool reflection of foregoing invention purpose and the plastic lead frame structure of conductor metal layer; Include: a pedestal; Said pedestal is the plastics of containing metal catalyst or contains organic plastics, and said pedestal outer peripheral edges are formed with a carrier, and said carrier is that interleaved does not have the metal solvent plastics or do not have organic plastic; Pedestal more down is formed slopely a reflecting surface at end face again; Moreover base-plates surface deposits the interface layer of a chemical copper or nickel metal layer, also utilizes laser technology released part interface layer to form an insulated circuit again, after making insulated circuit and carrier being connected; Re-use metal levels such as plating or chemical depositing copper, nickel, silver or gold, form the plastic lead frame structure of tool reflective metal layer.
Its preparation method comprises the following step in regular turn:
One extra quality ejaculation step; It is to make extra quality jetting mold with Precision Machining; Comprise the plastics of metal solvent or contain organic plastics by doping and form a pedestal; And simultaneously with no metal solvent plastics or do not have organic plastic be formed with one tightly invest pedestal carrier, and pedestal is down to be formed slopely a reflecting surface at end face, to constitute a lead frame stock;
One electroless plating method step, it is behind aforementioned extra quality ejaculation generating step one lead frame stock, carries out the electroplating bath pre-treatment of local surfaces activation subsequently, and deposits the interface layer of a chemical copper or chemical nickel with electroless plating method at base-plates surface;
One laser isolation step, it is after deposition is established in the plating of accomplishing interface layer, utilizes laser technology to carry out peeling off to form an insulated circuit of local interface layer, and insulated circuit is connected with carrier;
One plating step on the interface layer that forms insulated circuit, utilizes metal levels such as plating or chemical depositing copper, nickel, silver or gold on pedestal again, makes with the plastic lead frame structure of accomplishing tool reflection and conductor metal layer.
In order to achieve the above object, the present invention also provides a kind of preparation method, and it includes in regular turn:
Secondary penetrates step, and it adopts unitary plastic to penetrate, and these plastics are through the ejection formation pedestal; Formed pedestal utilizes etching; The even coating catalyst on its surface carries out this pedestal with whole catalyst coating to use for the second time the injection molding manufacture procedure of same plastic subsequently, is that embedded ejaculation forms carrier during ejection formation for the second time; Wherein said pedestal is down to be formed slopely a reflecting surface at end face, to constitute a lead frame stock; The electroless plating method step, it is behind aforementioned extra quality ejaculation generating step one lead frame stock, carries out the electroplating bath pre-treatment of local surfaces activation subsequently, and deposits an interface layer at said base-plates surface with electroless plating method;
The laser isolation step, it is after deposition is established in the plating of accomplishing said interface layer, utilizes laser to carry out peeling off to form an insulated circuit of local interface layer, and insulated circuit is connected with carrier;
Plating step is on the interface layer that forms said insulated circuit, utilizes plating or chemical deposition metal level again, and accomplishes the making of said plastic lead frame structure.
Thus, through representing of aforementioned techniques means of the present invention, make the present invention can effectively simplify its processing procedure; And reduction cost of manufacture; And do not influence the reflection angle and the reflecting brightness of original design, effectively promote its reflection efficiency, and the increase heat-conducting area can effectively promote heat-conducting effect; And can freely design trickle insulated circuit pattern, the present invention is had now at aspects such as " producing usefulness, reflecting effect and design variation " have more the effect enhancement.
Description of drawings
Fig. 1 is the schematic appearance of plastic lead frame structure of the present invention, in order to formation and the relativeness thereof that said conductive metal frames is described.
Fig. 2 is the preparation flow block schematic diagram of its TSMPL processing procedure of plastic lead frame of the present invention.
Fig. 3 is the preparation flow block schematic diagram of its SSPL processing procedure of plastic lead frame of the present invention.
Fig. 4 is the schematic appearance of pedestal of the present invention.
Fig. 5 is the schematic appearance of carrier of the present invention.
Fig. 6 is the schematic appearance of plastic lead frame of the present invention after extra quality ejaculation step.
Fig. 7 is the schematic appearance of plastic lead frame of the present invention after the electroless plating method step.
Fig. 8 carries out peeling off to form the schematic appearance of an insulated circuit of local interface layer with laser.
Fig. 9 is the schematic appearance of plastic lead frame of the present invention after plating step.
Embodiment
Below in conjunction with accompanying drawing, do more detailed explanation with other technical characterictic and advantage to the present invention is above-mentioned.
The present invention is a kind of plastic lead frame structure and preparation method thereof; Enclose in the specific embodiment and member thereof of the illustrative plastic lead frame structure of the present invention of figure; All about preceding and back, left and the right side, top and bottom, top and bottom and level and vertical reference; Only be used for conveniently describing, and unrestricted the present invention, also non-its member be limited to any position or direction in space.Specified size in graphic and the specification; When can be in not leaving claim of the present invention; Design according to a particular embodiment of the invention and demand and change, this technology is not limited to LED conducting wire frame in addition, and applicable to other electron component.
And about the detailed formation of plastic lead frame structure of the present invention; Then be as shown in Figure 1, said plastic lead frame consists predominantly of the plastics of a containing metal catalyst or contains the pedestal 10 of organic plastics, and said pedestal 10 outer peripheral edges are formed with the carrier caulking groove 11 that an interleaved links up; And utilize twice emission technology in the carrier caulking groove 11 of pedestal 10, to form no metal solvent plastics or do not have the carrier 20 of organic plastic; Pedestal 10 more down is formed slopely a reflecting surface 15 and the accommodation space 16 that supplies to be provided with light-emitting diode at end face again, and the angle of this reflecting surface 15 (reflector that promptly is commonly called as) can freely design, and the angle that its end face and its reflecting surface 15 define is between 15 degree~85 degree; According to different luminous Demand Design reflecting surface 15 angles; Be to promote lumination of light emitting diode efficient, moreover pedestal 10 surface depositions there are the interface layer 30 of a chemical copper or chemical nickel metal, also utilize laser technology released part interface layer 30 to form insulated circuits 40 again; After making insulated circuit 40 and carrier 20 being connected; And via insulated circuit 40 and carrier 20 with accommodation space 16 districts at a distance from form anodal 161 with negative pole 162, with electroplate or chemical deposition at deposition high-reflectivity metal (as: copper (Cu), nickel (Ni), silver (Ag), gold (Au), chromium metals such as (Cr)) the raising reflectivity and the conductor of reflecting surface 15, insulated circuit; And then form a kind of plastic lead frame structure that can freely design conducting wire and reflection and conductor metal layer 50; With the LED conducting wire frame of this technological made, have and do not limit the quantity number, can freely design pedestal 10 reflectings surface 15 shapes of lead frame; Can supply many light-emitting diodes tube side-by-sides to use; And the high usage of utilize electroplating deposition interface layer 30 has and reduces cost and excellent Electronic Performance can be provided, and the advantage of high reflection, high heat-conducting area characteristic.
Preferred embodiment as for the preparation method of plastic lead frame structure of the present invention; It is as shown in Figure 2; It comprises the step of an extra quality ejaculation step S1, an electroless plating method step S2 and a laser isolation step S3 and a plating step S4 etc. in regular turn; And accomplish the making of aforementioned plastic lead frame structure, the present invention is defined as TSMPL (Two-Shot Molded Plating and Laser) processing procedure with this preparation method:
The step of said extra quality ejaculation S1; It is in response to lead frame indoor design demand; Use Precision Machining to make extra quality jetting mold, pedestal 10 parts that desire produced the conducting wire use mix (doping) to help electroplated metal catalyst or organic substance, make pedestal 10 become in advance catalyst correction and cross containing metal catalyst or organic plastics; Said metal solvent or organic substance comprise palladium, copper, silver etc.; Supply follow-uply to form interface layer 30 (like Fig. 4), combine (as shown in Figure 5) with the no metal solvent or the organic carrier 20 of above-mentioned plastics close attachment more afterwards on pedestal 10 surface, said carrier 20 be mainly one be not easy to electroplating surface plastics; Or do not have the metal solvent plastics or do not have that organic plastic constitutes; In conjunction with after pedestal 10 carry out etching activation and metallization with carrier 20 on the surface of pedestal 10, and these two kinds of plastics also can select can resistant to elevated temperatures plastics (greater than 260 degree), to meet the demand of reflow (IR Reflow); And pedestal 10 forms reflecting surface 15 (reflector that promptly is commonly called as) through mold design; And the angle of this reflecting surface 15 can freely design, and the angle that its end face and its reflecting surface define is between 15 degree~85 degree, according to different luminous Demand Design reflecting surface 15 angles; For promoting lumination of light emitting diode efficient, wherein said plastics are mainly PA (Polyamide), polybutylene terephthalate (PBT), PET, LCP, PC, ABS, PC/ABS;
And the step of electroless plating method S2; It is after the step of aforementioned extra quality ejaculation S1; Promptly produce the plastic components (shown in Figure 6) of a lead frame stock; Carry out electroless plating subsequently and bathe (Plating Bath) pre-treatment; The local surfaces activation (Activation) that utilizes soup that its desire is electroplated, this step can let can the grow up interface layer 30 (as shown in Figure 7) of chemical nickel or chemical copper of the pedestal 10 surperficial generations of using platable plastic, and this helps the bond strength (Bonding Strength) between interface layer 30 and pedestal 10 plastics;
The step of laser insulation S3 again; It is after deposition is established in the plating of accomplishing interface layer 30; The present invention is for forming imperceptible insulated circuit pattern; Be to adopt laser to carry out peeling off of local interface layer 30 to form an insulated circuit 40 (like Fig. 8); And this insulated circuit 40 can be connected with carrier 20, designs to reach freely, circuit granular and the simple and easy and diversified production procedure of processing procedure, and it utilizes electronic laser bundle (Laser Beam) that local interface layer 30 in the insulated circuit pattern that forms according to design requirement institute desire in the reflecting surface 15 is peeled off; This optical maser wavelength can be selected for use in 248nm, 308nm, 355nm, 532nm, 1064nm or 10600nm, and lasing light emitter then can be from carbon dioxide (CO 2) laser, the refined chromium of rubidium (Nd:YAG) laser, Nd-doped yttrium vanadate (Nd:YVO4) crystal laser, quasi-molecule (Excimer) laser etc. selects for use, subsequently and can be on the interface layer that forms insulated circuit 40 according to demand,
Electroplate the step of S4; Utilize the arbitrary formed electroplating bath processing procedure depositing metal layers 50 of plating or chemical depositing copper, nickel, silver, gold, electrodeposited chromium, chemical replacement gold or plating or chemical copper-nickel-Yin or plating or the group that chemical copper-nickel-Jin constituted again; As shown in Figure 9; And formed part will be as the luminescent wafer adhesion usefulness with routing, and can improve reflectivity and conductor, so can accomplish LED conducting wire frame.
Moreover the preparation method of the plastic lead frame of tool metallic reflection of the present invention and conductor layer has an embodiment in addition; As shown in Figure 3; It is the step that the step of former extra quality ejaculation step S1 is replaced with the secondary ejaculation; Then also accomplish aforesaid electroless plating method step S2 and steps such as laser isolation step S3 and plating step S4 in regular turn, and accomplish the making of aforementioned plastic lead frame structure, the present invention is defined as SSPL (Second Shot Plating and Laser) processing procedure with this preparation method's embodiment; Wherein:
The step that said secondary penetrates; Be and adopt unitary plastic to penetrate, these plastics are through ejection formation pedestal 10 (like Fig. 4), and formed pedestal 10 utilizes etching; Evenly soak or the coating catalyst on its surface; Subsequently this pedestal 10 with the coating of whole catalyst is carried out using for the second time the injection molding manufacture procedure of same plastic, utilize mold design to form reflectings surface 15, and utilize mold design to make to desire the circuit surface that is deposited metal level to expose to the open air in pedestal 10; Carry out electroless plating method S2 same as described above and laser insulation S3 and the step of electroplating S4 subsequently, can produce the lead frame of the solid crystalline substance that supplies the light-emitting diode use.
In this processing procedure mode; Penetrate for the first time formed plastic components; Be be used for LED wafer adhesion, routing then, the deposition and the laser insulation of reflecting surface 15 structures, interface layer 30 form insulated circuit, and this reflecting surface 15 links interface layer 30 and forms related application such as large tracts of land radiator structures; Penetrating for the second time element is to be used for linking with the formed insulated circuit of the S3 of laser insulation for the first time, forms complete insulation system element, and design of the present invention has the production cost of improvement and free design characteristic.
In sum, this case not only really belongs to innovation on the kenel of space, and can promote above-mentioned multinomial effect by existing article, should fully meet the legal patent of invention important document of novelty and progressive, files an application in accordance with the law.
More than explanation is just illustrative for the purpose of the present invention, and nonrestrictive, those of ordinary skills understand; Under the situation of spirit that does not break away from following accompanying claims and limited and scope, can make many modifications, change; Or equivalence, but all will fall in protection scope of the present invention.

Claims (10)

1. the plastic lead frame structure of tool reflection and conductor metal layer; It is characterized in that it includes a pedestal, said pedestal is the plastics of containing metal catalyst or contains organic plastics; Said pedestal down is formed slopely a reflecting surface at end face; Be formed with the carrier caulking groove of an interleaved in the outer peripheral edges of said reflecting surface, form a carrier with emission technology in the said carrier caulking groove, said carrier is for no metal solvent plastics or do not have organic plastic; One be selected from chemical nickel or chemical copper interface layer be formed at said base-plates surface with electroless plating method; Utilize the said interface layer of laser technology released part to form an insulated circuit, said insulated circuit is connected with said carrier, implement plating or chemical deposition metal level on said pedestal.
2. the plastic lead frame structure of tool according to claim 1 reflection and conductor metal layer is characterized in that, said pedestal and said carrier are the extra quality ejaculation institute moulding of different plastic materials.
3. the plastic lead frame structure of tool reflection according to claim 1 and conductor metal layer; It is characterized in that; Said pedestal and said carrier are that the secondary of same plastic material penetrates institute's moulding, are doped with the plastics of containing metal catalyst in the said again pedestal or contain organic plastics.
4. the preparation method of the plastic lead frame structure of tool reflection and conductor metal layer is characterized in that it includes in regular turn:
Extra quality ejaculation step; Comprise the plastics of metal solvent or contain organic plastics by doping and form a pedestal; And simultaneously with no metal solvent plastics or do not have organic plastic be formed with one tightly invest said pedestal carrier; And said pedestal is down to be formed slopely a reflecting surface at end face, to constitute a lead frame stock;
The electroless plating method step; It is behind the said lead frame stock of aforementioned extra quality ejaculation generating step; Carry out the electroplating bath pre-treatment of local surfaces activation subsequently, and deposit an interface layer at said base-plates surface with electroless plating method, this interface layer is to be selected from chemical nickel or chemical copper;
The laser isolation step, it is after deposition is established in the plating of accomplishing said interface layer, utilizes laser to carry out peeling off to form an insulated circuit of local interface layer, and said insulated circuit is connected with said carrier;
Plating step is on the interface layer that forms said insulated circuit, utilizes plating or chemical deposition metal level again, and accomplishes the making of said plastic lead frame structure.
5. the preparation method of the plastic lead frame structure of tool reflection according to claim 4 and conductor metal layer is characterized in that, the metal solvent or the organic substance that form the plastics doping of said pedestal in the said extra quality ejaculation step are mainly palladium, copper, silver.
6. the preparation method of the plastic lead frame structure of tool reflection according to claim 4 and conductor metal layer is characterized in that, the angle that the end face of said pedestal and its reflecting surface define is between 15 degree~85 degree.
7. the preparation method of the plastic lead frame structure of tool reflection according to claim 4 and conductor metal layer; It is characterized in that; The lasing light emitter of said laser isolation step then is selected from carbon dioxide laser, the refined chromium laser of rubidium, Nd-doped yttrium vanadate crystal laser, PRK, and optical maser wavelength is selected from 248nm, 308nm, 355nm, 532nm, 1064nm or 10600nm wavelength.
8. the preparation method of the plastic lead frame structure of tool reflection and conductor metal layer is characterized in that it includes in regular turn:
Secondary penetrates step, and it adopts unitary plastic to penetrate, and these plastics are through the ejection formation pedestal; Formed pedestal utilizes etching; The even coating catalyst on its surface carries out this pedestal with whole catalyst coating to use for the second time the injection molding manufacture procedure of same plastic subsequently, is that embedded ejaculation forms carrier during ejection formation for the second time; Wherein said pedestal is down to be formed slopely a reflecting surface at end face, to constitute a lead frame stock; The electroless plating method step, it is behind aforementioned extra quality ejaculation generating step one lead frame stock, carries out the electroplating bath pre-treatment of local surfaces activation subsequently, and deposits an interface layer at said base-plates surface with electroless plating method, this interface layer is to be selected from chemical nickel or chemical copper;
The laser isolation step, it is after deposition is established in the plating of accomplishing said interface layer, utilizes laser to carry out peeling off to form an insulated circuit of local interface layer, and said insulated circuit is connected with said carrier;
Plating step is on the interface layer that forms said insulated circuit, utilizes plating or chemical deposition metal level again, and accomplishes the making of said plastic lead frame structure.
9. the preparation method of the plastic lead frame structure of tool reflection according to claim 8 and conductor metal layer is characterized in that, the angle that the end face of said pedestal and its reflecting surface define is between 15 degree~85 degree.
10. the preparation method of the plastic lead frame structure of tool reflection according to claim 8 and conductor metal layer; It is characterized in that; The lasing light emitter of said laser isolation step then is selected from carbon dioxide laser, the refined chromium laser of rubidium, Nd-doped yttrium vanadate crystal laser, PRK, and optical maser wavelength is selected from 248nm, 308nm, 355nm, 532nm, 1064nm or 10600nm wavelength.
CN 200910143720 2009-05-25 2009-05-25 Plastic lead frame structure with reflective and conductor metal layer and preparation method thereof Expired - Fee Related CN101901794B (en)

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CN102767804A (en) * 2011-05-06 2012-11-07 奇想创造事业股份有限公司 Double-material plastic lamp seat for LED lamp bulb and lamp bulb component comprising double-material plastic lamp seat
CN103532250A (en) * 2013-10-08 2014-01-22 深圳市金源康实业有限公司 Wireless charging device part for surface of plastic part and manufacturing method of wireless charging device part

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1502128A (en) * 2001-01-31 2004-06-02 ̩ Radiation emitter devices and method of making the same
CN101009340A (en) * 2006-01-25 2007-08-01 亿光电子工业股份有限公司 LED encapsulation structure and its making method
CN101101944A (en) * 2006-07-07 2008-01-09 Lg电子株式会社 Sub-mount for mounting light emitting device and light emitting device package
CN101151739A (en) * 2005-11-09 2008-03-26 Alti电子株式会社 Led of side view type and the method for manufacturing the same
WO2008060490A2 (en) * 2006-11-09 2008-05-22 Quantum Leap Packaging, Inc. Led reflective package

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1502128A (en) * 2001-01-31 2004-06-02 ̩ Radiation emitter devices and method of making the same
CN101151739A (en) * 2005-11-09 2008-03-26 Alti电子株式会社 Led of side view type and the method for manufacturing the same
CN101009340A (en) * 2006-01-25 2007-08-01 亿光电子工业股份有限公司 LED encapsulation structure and its making method
CN101101944A (en) * 2006-07-07 2008-01-09 Lg电子株式会社 Sub-mount for mounting light emitting device and light emitting device package
WO2008060490A2 (en) * 2006-11-09 2008-05-22 Quantum Leap Packaging, Inc. Led reflective package

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