CN101931097A - LiCoO2的沉积 - Google Patents

LiCoO2的沉积 Download PDF

Info

Publication number
CN101931097A
CN101931097A CN2010101615170A CN201010161517A CN101931097A CN 101931097 A CN101931097 A CN 101931097A CN 2010101615170 A CN2010101615170 A CN 2010101615170A CN 201010161517 A CN201010161517 A CN 201010161517A CN 101931097 A CN101931097 A CN 101931097A
Authority
CN
China
Prior art keywords
layer
licoo
substrate
deposition
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN2010101615170A
Other languages
English (en)
Other versions
CN101931097B (zh
Inventor
张红梅
理查德·E·德马雷
邵梅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Symmorphix Inc
Original Assignee
Symmorphix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Symmorphix Inc filed Critical Symmorphix Inc
Publication of CN101931097A publication Critical patent/CN101931097A/zh
Application granted granted Critical
Publication of CN101931097B publication Critical patent/CN101931097B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0423—Physical vapour deposition
    • H01M4/0426—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5806—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/058—Construction or manufacture
    • H01M10/0585—Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0423—Physical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0402—Methods of deposition of the material
    • H01M4/0421—Methods of deposition of the material involving vapour deposition
    • H01M4/0428—Chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • H01M4/0471—Processes of manufacture in general involving thermal treatment, e.g. firing, sintering, backing particulate active material, thermal decomposition, pyrolysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/131—Electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1391—Processes of manufacture of electrodes based on mixed oxides or hydroxides, or on mixtures of oxides or hydroxides, e.g. LiCoOx
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/48—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides
    • H01M4/52—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron
    • H01M4/525—Selection of substances as active materials, active masses, active liquids of inorganic oxides or hydroxides of nickel, cobalt or iron of mixed oxides or hydroxides containing iron, cobalt or nickel for inserting or intercalating light metals, e.g. LiNiO2, LiCoO2 or LiCoOxFy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/66—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/66—Selection of materials
    • H01M4/661—Metal or alloys, e.g. alloy coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/66—Selection of materials
    • H01M4/665—Composites
    • H01M4/667—Composites in the form of layers, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/14—Cells with non-aqueous electrolyte
    • H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
    • H01M6/185—Cells with non-aqueous electrolyte with solid electrolyte with oxides, hydroxides or oxysalts as solid electrolytes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/14—Cells with non-aqueous electrolyte
    • H01M6/18—Cells with non-aqueous electrolyte with solid electrolyte
    • H01M6/188—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/42—Grouping of primary cells into batteries
    • H01M6/46—Grouping of primary cells into batteries of flat cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
    • H01M2004/028—Positive electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2300/00—Electrolytes
    • H01M2300/0017—Non-aqueous electrolytes
    • H01M2300/002—Inorganic electrolyte
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M2300/00—Electrolytes
    • H01M2300/0017—Non-aqueous electrolytes
    • H01M2300/0065—Solid electrolytes
    • H01M2300/0068—Solid electrolytes inorganic
    • H01M2300/0071—Oxides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49108—Electric battery cell making
    • Y10T29/49115—Electric battery cell making including coating or impregnating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Secondary Cells (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Cell Electrode Carriers And Collectors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明提供一种电池结构体和层叠电池结构体，其包含在低温衬底上面沉积的结晶LiCoO2层，其中所述结晶LiCoO2层具有在750至1700之间的晶粒大小。

Description

LiCoO2的沉积 
本申请是PCT国际申请日为2005年12月7日、国家申请号为200580042305.8(原国际申请号PCT/US2005/044781)、发明名称为《LiCoO2的沉积》的申请的分案申请。 
相关申请 
本发明要求下列临时申请的优先权：2005年2月8日由Hongmei Zhang和Richard E.Demaray提交的临时申请60/651,363；和2004年12月8日由相同的发明人提交的临时申请60/634,818，每一份临时申请的全部内容都通过引用结合在此。 
发明背景 
技术领域
本发明涉及薄膜固态电池，具体而言，涉及用于电池制造的LiCoO2膜和层的沉积。 
相关技术的论述 
固态薄膜电池典型地通过将薄膜层叠在衬底上使得所述膜协同产生电压而形成。所述薄膜典型地包含集电极、阴极、阳极和电解质。可以使用包括溅射和电镀的多种沉积方法沉积所述薄膜。适于这种应用的衬底常规上是能够在空气中经受至少一次高达约2小时的至少700℃的高温退火处理，以使LiCoO2膜结晶的高温材料。这种衬底可以是具有合适结构和材料性能的任何适合的材料，例如在LiCoO2的存在下经受后续高温处理的半导体晶片、金属片(例如钛或锆)、陶瓷如氧化铝或其它材料，所述LiCoO2可以在这些温度循环过程中与用于电池的大多数材料经受显著的界面反应。 
人们已经将除LiCoO2以外的其它含锂的混合金属氧化物评价为结晶 能储存阴极材料，其包含Ni、Nb、Mn、V并且有时还包含Co，而且包含其它过渡金属氧化物。典型地，以非晶态形式沉积所述阴极材料，然后在退火处理中加热所述材料以形成结晶材料。在LiCoO2中，例如，在700℃以上的退火将沉积的非晶膜转变为结晶态。然而，这种高温退火严重限制了可以用作衬底的材料，诱导与含锂阴极材料的破坏性反应，并且通常需要使用昂贵的贵金属如金。这些高热预算的方法(即，长时间周期的高温)与半导体或MEM器件加工不相容，并且限制了衬底材料的选择，增加成本并且降低这些电池的产量。 
已知可以实现非晶LiCoO2在贵金属上的结晶。在Kim等中论述了这种结晶的一个实例，其中如x射线衍射数据显示，在贵金属上的LiCoO2非晶层在700℃的20分钟常规炉退火实现了LiCoO2材料的结晶。Kim，Han-Ki和Yoon，Young Soo，″Characteristics of rapid-thermal-annealed LiCoO2，cathodefilm for an all-solid-state thin film microbattery，″J.Vac.Sci.Techn.A 22(4)，2004年7月/8月。在Kim等中，在沉积于高温MgO/Si衬底上的铂膜上沉积LiCoO2膜。在Kim等中表明，这些结晶膜能够构成功能性全固态Li+离子电池的含Li+离子阴极层。 
有很多参考文献都公开了一种能够提供LiCoO2膜的离子束辅助方法，所述LiCoO2膜通过小角x射线衍射(XRD)显示出一些可观察到的结晶组成。在美国专利申请09/815,983(公布号US2002/001747)、09/815,621(公布号US 2001/0032666)和09/815,919(公布号US 2002/0001746)中找到了这些膜的一些实例。这些参考文献公开与沉积源并行使用第二前侧离子束或其它离子源以在衬底表面获得离子通量与LiCoO2蒸气通量的交迭区。这些参考文献没有一份公开了在沉积过程中的膜温度数据或膜的其它温度数据以支持低温处理的主张。 
很难通过溅射材料层或通过使用离子通量的轰击形成均匀的沉积。使用来自相对于衬底占据不相同的位置和范围的两种源的两种均匀的同步分布，极大地增加在实现均匀的材料沉积中所涉及的困难。这些参考文献没有公开薄膜电池的可靠制造所需的均匀的材料沉积。人们对有利于电池产品的材料均匀性的良好认识的规定是5％的1-∑(one-sigma)的材料均匀性是在薄膜制备中的标准。发现约86％具有这种均匀性的膜对于电池制造是 可接受的。 
还更困难的是按衬底比例来制造如200mm或300mm的尺度。实际上，在使用溅射沉积以及离子束沉积的上述讨论的参考文献中，只公开了小面积的靶和小面积的衬底。这些参考文献公开了唯一的可行性结果。在这些参考文献中没有公开由两种独立的前侧源(front side source)实现均匀的分布的方法。 
此外，常规材料和制造方法可能限制所制造电池的能量密度的容量，从而导致电池越多需要占据越大的体积。特别需要制造具有大的每单位体积储能量的电池以提供低重量和低体积的电池。 
因此，需要用于将结晶材料例如LiCoO2材料沉积到衬底上的低温方法。特别是，需要允许以足够低的热预算制造用于电池结构体的阳极锂膜，从而允许在低温材料如不锈钢、铝或铜箔上制造功能化结构体的方法。 
发明概述 
根据本发明，描述以脉冲调制的直流物理气相沉积法沉积LiCoO2层。这种沉积可以提供具有适宜的<101>取向的LiCoO2结晶层的低温、高沉积速率的沉积。所述沉积的一些实施方案解决了对LiCoO2膜的高速率沉积的需要，所述LiCoO2膜可以用作固态可充电Li电池中的阴极层。根据本发明的方法的实施方案可以消除常规上使LiCoO2层结晶所需要的高温(＞700℃)退火步骤。 
根据本发明一些实施方案的沉积LiCoO2层的方法包括将衬底放置在反应器中；使包含氩气和氧气的气体混合物流过所述反应器；和将脉冲调制的DC功率施加到相对所述衬底放置的由LiCoO2形成的靶上。在一些实施方案中，在所述衬底上形成LiCoO2层。此外，在一些实施方案中，所述LiCoO2层是取向<101>的结晶层。 
在一些实施方案中，可以形成层叠的电池结构体。所述层叠的电池结构体包含沉积在薄衬底上的一个或多个电池层叠体，其中每一个电池层叠体包含：导电层、沉积在所述导电层上的结晶LiCoO2层、沉积在所述LiCoO2层上的LiPON层；和沉积在所述LiPON层上的阳极。可以将顶部的导电层沉积在所述一个或多个电池层叠体上。 
在一些实施方案中，可以在聚集型设备(cluster tool)中形成电池结构。在聚集型设备中制造电池的方法包括：将衬底装载到聚集型设备中；在所述聚集型设备的第一室中，将导电层沉积在所述衬底上；在所述聚集型设备的第二室中，将结晶LiCoO2层沉积在所述导电层上；在所述聚集型设备的第三室中，将LiPON层沉积在所述LiCoO2层上；在第四室中，将阳极层沉积在所述LiCoO2层上；和在所述聚集型设备的第五室中，将第二导电层沉积在所述LiPON层上。 
用于固定薄衬底的固定装置可以包含顶部和底部，其中所述薄衬底是在当所述顶部附在所述底部上时被固定的。 
下面参考下列附图进一步论述本发明的这些和其它实施方案。应该理解上面的概述和下面的详述都只是示例性和说明性的，并不限制要求保护的本发明。此外，关于在沉积处理过程中或在结合这些层的装置工作时的某些层的沉积或性能的具体说明或理论仅仅是为了说明而表述的，而不应该被认为限制本发明公开内容或权利要求的范围。 
附图简述 
图1A和1B说明了可以在根据本发明的沉积方法中使用的脉冲调制的DC偏压式反应性沉积装置。 
图2显示了可以用于图1A和1B中说明的反应器的靶的一个实例。 
图3说明了根据本发明的一些实施方案的薄膜电池设计。 
图4A和4B显示了根据本发明的实施方案沉积的LiCoO2膜的x射线衍射分析和SEM照片。 
图5A至5F显示了根据本发明的一些实施方案的LiCoO2膜的SEM照片。 
图5G显示了与图5B-5F中所示的沉积物对应的x射线衍射数据。 
图6A说明了根据本发明的一些实施方案沉积在薄衬底上的LiCoO2层。 
图6B说明了根据本发明的一些实施方案沉积在薄衬底上的导电层之上的LiCoO2层。 
图7A、7B、7C和7D说明了可以在根据本发明的一些实施方案沉积的LiCoO2层在沉积时使用的薄衬底支架和掩模的配置。 
图8说明了可以用于形成具有根据本发明的一些实施方案沉积的LiCoO2层的电池的聚集型设备。 
图9A和9B说明了具有根据本发明的一些实施方案沉积的LiCoO2层的层叠电池结构的实例。 
图10A至10D说明了沉积在硅晶片上的铱层上面的LiCoO2的沉积和退火的步骤。 
图11A至11D说明了根据本发明一些实施方案形成在铱层上面的单层电池。 
图12A至12L说明了结晶LiCoO2层在硅或氧化铝衬底上的沉积。 
图13A至13F说明了用于根据本发明沉积的LiCoO2层的快速热退火处理。 
图14A至14D说明了在根据本发明的实施方案沉积的LiCoO2膜的情况下使用的几种退火处理。 
图15A和15B说明了在根据本发明沉积的LiCoO2膜的快速热退火中的匀变时间(ramp-time)的影响。 
图16说明了根据本发明的一些实施方案沉积的LiCoO2膜的厚度均匀性。 
图17说明了使用根据本发明的一些实施方案的LiCoO2膜形成的电池的电池充电和放电评价图。 
在所述图中，具有相同标记的元件具有相同或类似的功能。 
发明详述 
根据本发明的实施方案，通过脉冲调制的dc物理气相沉积(PVD)法将LiCoO2膜沉积在衬底上。与例如Kim等相反，根据本发明一些实施方案的LiCoO2膜提供结晶LiCoO2膜，它是在不使用金属成核或阻挡下层膜的情况下，在沉积过程中沉积在衬底温度低到约220℃的衬底上的。通过退火，可以使沉积原样(as-diposited)的LiCoO2膜容易熟化至很高的结晶状态。另外，当在贵金属膜上安置时，可以将沉积原样的结晶膜在进一步大大降低的温度例如低至400至500℃而不是在700℃的温度退火，因而提供了固态电池在更低温度的衬底上的沉积、退火和制造。 
在本申请中，描述一种不需要第二前侧离子源或离子辅助设备(assistance)的单一扩展源，所述单一扩展源按比例确定为400mm×500mm用于制造，以在2000cm2的面积上以每小时1.2微米厚度的沉积速率实现在25个点测量的LiCoO2均匀性为3％的1-∑。 
关于使用这种方法的其它沉积，在沉积过程中的衬底的温度测量表明衬底保持小于224℃。使用从Omega Engineering，Stamford，Ct购买的温度粘结剂(sticker)(Model no.TL-F-390，在199-224℃是活性的)进行温度测量。 
此外，在一些实施方案中，根据本发明沉积的膜可以具有高于常规膜的方法约10至约30倍的沉积速率。在表I中说明了根据本发明沉积的膜的沉积厚度和沉积时间。此外，可以将根据本发明的膜沉积在宽面积的衬底上， 所述衬底具有的表面面积为现有的溅射方法的表面面积的10至50倍，从而导致高得多的生产率和低得多的制造成本，由此提供高容量、低成本的电池。 
此外，不使用离子源的常规沉积方法能够沉积非晶LiCoO2层，但是沉积不了结晶LiCoO2层。令人惊奇的是，根据本发明的一些实施方案的沉积，沉积出具有通过x射线衍射技术容易测量的相当大的结晶性的LiCoO2层。在一些实施方案中，沉积原样的LiCoO2层的结晶性足以用于电池结构，而不用进一步的热处理。在一些实施方案中，通过与沉积在低温衬底上的膜相适合的具有低的热预算的热处理，使沉积原样的LiCoO2层的结晶性得到提高。 
此外，根据本发明的一些实施方案沉积的一些LiCoO2层的沉积原样的化学计量表明这种层足以用于电池。在沉积具有结晶性并且具有足够化学计量的LiCoO2膜的证明能力的情况下，可以制造使用沉积原样的LiCoO2膜的电池。将LiCoO2层热处理可以提高结晶性并且降低阻抗。 
在一些实施方案中，在衬底上直接沉积具有<101>或<003>结晶取向的LiCoO2结晶层。结晶材料的沉积可以消除或减少使膜结晶并且取向的后续高温退火或贵金属层的需要。消除高温退火允许在轻重量和低温衬底如不锈钢箔、铜箔、铝箔和塑料片上形成电池结构，从而降低电池的重量和成本，同时保持Li基电池的能量密度储存能力。在一些实施方案中，可以在贵金属层如铱上沉积结晶LiCoO2层，从而导致提高结晶性所需的熟化热预算进一步显著降低。 
在下列专利申请中描述了通过脉冲调制的DC偏压式反应性离子沉积的材料沉积：Hongmei Zhang等的美国专利申请序列号10/101863，题目为″Biased Pulse DC Reactive Sputtering of Oxide Films″，2002年3月16日提交。在下列专利申请中描述了靶的制备：Vassiliki Milonopoulou等的美国专利申请序列号10/101,341，题目为″Rare-Earth Pre-Alloyed PVD Targets forDielectric Planar Applications″，2002年3月16日提交。美国专利申请序列号10/101863和美国专利申请序列号10/101,341各自均被转让给与本公开相同的受让人，它们各自的全部内容都被结合在此。在美国专利号6,506,289中也描述了氧化物材料的沉积，其全部内容也通过引用结合在此。可以使用 与在美国专利号6,506,289和美国申请序列号10/101863中具体描述的那些类似的方法沉积透明的氧化物膜。 
图1A显示了根据本发明的由靶12溅射材料的反应器装置10的示意图。在一些实施方案中，装置10可以是例如根据来自Applied Komatsu的AKT-1600PVD(400×500mm的衬底尺寸)系统或来自Applied Komatsu，SantaClara，CA的AKT-4300(600×720mm的衬底尺寸)系统改造的。例如，AKT-1600反应器具有通过真空传输室连接的三个沉积室。可以改进这些AKT反应器使得在材料膜的沉积过程中，将脉冲调制的DC功率供应到靶上并且将RF功率供应到衬底上。 
装置10包含靶12，该靶12通过滤波器15与脉冲调制的DC电源14电连接。在一些实施方案中，靶12是提供沉积在衬底16上的材料的宽面积溅射源的靶。将衬底16与靶12平行并且相对放置。靶12在由脉冲调制的DC电源14将功率施加到其上时起着阴极的作用，并且被等效称为阴极。将电功率施加到靶12上产生等离子体53。将衬底16通过绝缘体54与电极17电容连接。可以将电极17连接到RF电源18上。将磁铁20扫描穿过靶12的顶部。 
对于如通过装置10进行的脉冲调制式反应性dc磁控管溅射，通过电源14供应到靶12上的电源的极性在负电压和正电压之间振荡。在正电压期间，在靶12的表面上的绝缘层放电并且防止产生电弧。为了获得无电弧沉积，脉冲频率超过可以取决于靶材料、阴极电流和反向时间的临界频率。使用如装置10中所示的反应性脉冲DC磁控管溅射，可以制备高质量的氧化物膜。 
脉冲调制的DC电源14可以是任何脉冲调制的DC电源，例如AdvancedEnergy，Inc的AE Pinnacle plus 10K。在这种DC电源的情况下，可以供应频率在0和350kHz之间的高达10kW的脉冲调制的DC功率。反向电压可以是负的靶电压的10％。使用其它电源可能导致不同的功率特性、频率特性和反向电压百分比。可以将关于这种实施方案的电源14的反向时间调整在0和5μs之间。 
滤波器15防止来自电源18的偏压功率耦合到脉冲调制的DC电源14中。在一些实施方案中，电源18可以是2MHzRF电源，例如由ENI，ColoradoSprings，Co.制造的Nova-25电源。 
在一些实施方案中，滤波器15可以是2MHz正弦波带阻滤波器。在一些实施方案中，滤波器的带宽可以是约100kHz。因此，滤波器15防止来自衬底16的偏压的2MHz功率损害电源14，并且允许脉冲调制的dc功率和频率通过。 
脉冲调制的DC沉积的膜不是完全密集的，并且可能具有柱状结构。由于在柱状物之间的边界，柱状结构可能对高密度是重要的薄膜应用如阻挡膜和电介质膜有害。所述柱状物起着降低材料的介电强度的作用，但是可能提供使电流、离子电流、气体或其它化学试剂如水传输或扩散的扩散通道。在固态电池的情况下，因为柱状结构允许Li通过材料边界更好地传输，由根据本发明的方法获得的具有结晶性的柱状结构对电池性能有利。 
在Phoenix系统中，例如，为了将沉积在具有约600×720mm的尺寸的，靶12可以具有约800.00×920.00mm×4至8mm的有效尺寸。可以将衬底16的温度调节到-50℃和500℃之间。在靶12和衬底16之间的距离可以在约3和约9cm之间(在一些实施方案中，在4.8和6cm之间)。可以将工艺气体以高达200sccm的速率引入到装置10的室中，同时可以将在装置10的室中的压力保持在约7和6毫托之间。磁铁20提供被定向在靶12的平面内并且强度为约400和约600高斯之间的磁场，并且以小于约20-30秒/扫描的速率横跨靶12移动。在使用Phoenix反应器的一些实施方案中，磁铁20可以是尺寸约为150mm×800mm的跑道形磁铁。 
图2说明了靶12的一个实例。沉积在位于载体板17上的衬底上的膜具有良好的厚度均匀性，其中所述载体板17与靶12的区域52正对。区域52是图1B所示的暴露于均匀的等离子体环境下的区域。在一些实施中，载体17可以是与区域52共同扩张的。图2所示的区域24指其内可以同时实现物理和化学的均匀沉积的区域，例如，物理和化学均匀性提供折射率均匀性、氧化物膜均匀性或金属膜均匀性的地方。图2显示了提供厚度均匀性的靶12的区域52，所述区域52通常大于对沉积膜提供厚度和化学均匀性的靶12的区域24。然而，在最佳方法中，区域52和24可以是共同扩张的。 
在一些实施方案中，磁铁20在一个方向例如在图2中的Y方向上延伸超出区域52，使得扫描只在一个方向例如X方向上是必需的，以提供时间平均的均匀磁场。如图1A和1B中所示，磁铁20可以扫描穿过比均匀的溅射 侵蚀的区域52更大的靶12的整个范围。磁铁20在与靶12的平面平行的平面内移动。 
均匀靶12与大于衬底区域16的靶区域52的组合可以提供厚度高度均匀的膜。此外，沉积膜的材料性能可以是高度均匀的。在大于或等于以均匀膜厚度涂覆的区域的区域上面，靶表面的溅射条件如侵蚀的均匀性、在靶表面的等离子体平均温度和靶表面与处理的气相环境的平衡是均匀的。另外，膜厚度均匀的区域大于或等于具有高度均匀的电、机械或光学性能如折射率、化学计量、密度、透射或吸收率的膜的区域。 
靶12可以由提供用于LiCoO2沉积的恰当化学计量的任何材料形成。典型的陶瓷靶材料包含Li和Co的氧化物以及金属Li和Co添加剂和掺杂剂如Ni、Si、Nb或其它适合的金属氧化物添加剂。在本公开中，靶12可以由用于沉积LiCoO2膜的LiCoO2形成。 
在本发明的一些实施方案中，形成材料砖。可以将这些砖装配在垫板上以形成用于装置10的靶。宽面积的溅射阴极靶可以由更小的砖的密集阵列形成。因此，靶12可以包含多块砖，例如包含在2至60块之间的独立砖。可以将砖精加工成一定尺寸，使得提供小于约0.010″至约0.020″或小于半毫米的边缘式非接触的砖与砖的边宽，以消除可能发生在砖30的相邻砖之间的等离子体处理。在图1B中，在靶12的砖和暗区阳极或接地屏蔽19之间的距离有时可以更大，以提供非接触组件或者在处理室调节或操作过程中提供热膨胀公差。 
如图1B中所示，在上覆衬底16的区域中，可以在靶12和衬底16之间的区域内产生均匀的等离子体环境。可以在整个靶12下面延伸的区域51中产生等离子体53。靶12的中心区域52可以经受均匀的溅射侵蚀的条件。如在此进一步论述那样，则沉积在置于中心区域52下面的任何地方的衬底上的层在厚度和其它性能方面(即，介电性、光学指数或材料浓度)可以是均匀的。在一些实施方案中，靶12基本上是平坦的，以提供沉积在衬底16上的膜的均匀性。实际上，靶12的平面性可以指在区域52的靶表面的所有部分都是不超过几毫米的平坦表面，并且可以典型地为不超过0.5mm的平坦表面。 
图3显示了具有根据本发明的一些实施方案沉积的LiCoO2层的电池结 构。如图3中所示，将金属集电层302沉积在衬底301上。在一些实施方案中，可以在沉积LiCoO2层303之前，以各种方法将集电层302形成图案。而且，根据一些实施方案，LiCoO2层303可以是沉积的结晶层。在本发明的一些实施方案中，层303在无需结晶热处理的情况下就已是结晶的。因此，衬底301可以是硅晶片、钛金属、氧化铝或其它常规的高温衬底，但是还可以是低温材料如塑料、玻璃或其它能够对来自高温结晶热处理的损害敏感的材料。这种特性可以具有降低通过本发明形成的电池结构的费用和重量的很大优点。LiCoO2的低温沉积允许电池层一个接一个的连续沉积。这种方法具有在不包含衬底层的情况下，以层叠状态获得连续的电池结构层的优点。叠层式电池提供更高的比能量密度以及低阻抗的充电和放电操作。 
在一些实施方案中，可以在衬底301上沉积氧化物层。例如，可以在硅晶片上沉积硅氧化物层。可以在导电层302和衬底301之间形成其它层。 
如在图3中进一步显示，在LiCoO2层303上面沉积LiPON层304(LixPOyNZ)。LiPON层304是电池300的电解质，而LiCoO2层303作为阴极。可以在LiPON层304上面沉积金属导电层305以完成电池。金属导电层305可以包含与LiPON层304相邻的锂。 
在LiPON层304上面沉积阳极305。阳极305可以是例如蒸发的锂金属。还可以使用其它材料，例如镍。然后将作为导电材料的集电极306沉积在阳极305的至少一部分上面。 
通过Li离子在从集电极306至集电极302的方向上迁移，以将集电极306和集电极302之间的电压保持为恒定电压，使得Li基薄膜电池进行工作。于是，电池结构300供应稳定电流的能力依赖于Li离子扩散通过LiPON层304和LiCoO2层303的能力。通过薄膜电池中的块状阴极LiCoO2层303的Li迁移借助晶粒或晶粒边界发生。在本公开中不受任何特定的迁移理论限制的情况下，认为是其平面与衬底302平行的晶粒堵塞了Li离子的流动，同时以与衬底301垂直的平面取向(即，与Li离子流的方向平行取向)的晶粒促进Li扩散。因此，为了提供高电流的电池结构，LiCoO2层303应该包含以<101>方向或<003>方向取向的晶体。 
根据本发明，可以使用如上所述的脉冲调制的DC偏压的PVD系统在 衬底302上沉积LiCoO2膜。另外，可以改进AKT 1600PVD系统以提供RF偏压，并且可以使用Advanced Energy Pinnacle plus 10K脉冲调制的DC电源对靶提供功率。电源的脉冲频率可以从约0KHz变化至约350KHz。电源的功率输出在0和约10kW之间。在dc溅射的情况下，可以使用电阻率在约3至约10kΩ的范围内的致密LiCoO2砖的靶。 
在一些实施方案中，在Si晶片上沉积LiCoO2膜。可以使用包含氧气和氩气的气流，在一些实施方案中，氧气与氩气的比率在0至约50％的范围内，同时总气流约为80sccm。在沉积过程中，脉冲频率在约200kHz至约300kHz的范围。还可以将RF偏压施加到衬底上。在多次试验中，根据O2/Ar比率以及衬底偏压，沉积速率从约 
Figure GSA00000088783800111
/(kW秒)变化至约 
Figure GSA00000088783800112
/(kW秒)。 
表I说明了根据本发明的LiCoO2的一些示例性沉积。对得到的薄膜取得的XRD(x射线衍射)结果说明根据本发明沉积的膜是结晶膜，该结晶膜通常具有高度纹理化的大小达到约150nm的晶粒尺寸。占优势的晶体取向对O2/Ar比率显得敏感。对于某些O2/Ar比率(～10％)，沉积原样的膜具有在<101>方向或<003>方向上的优选取向和生长差的<003>平面。 
图4A和4B分别说明了作为表I中的实施例15沉积的LiCoO2膜的XRD分析和SEM横截面。对于初始温度约为30℃的衬底，使用2kW的靶功率、300kHz的频率以及60sccm的Ar和20sccm的O2，在Si晶片上沉积这种LiCoO2膜。如图4A的XRD分析所示，强的<101>峰表示LiCoO2晶体的强取向显示在适宜的<101>结晶方向上。图4B中所示的SEM横截面进一步显示了具有<101>方向的膜的柱状结构和得到的LiCoO2晶体的晶粒边界。 
图5A至5E显示了根据本发明的进一步示例性沉积的LiCoO2晶体的SEM横截面。在每一个实施例中，使用约2kW的靶功率和约250kHz的频率，在Si晶片上进行LiCoO2膜的沉积。在图5A中所示的LiCoO2膜对应在表I中的示例性沉积实施例1。在图5A中所示的LiCoO2膜的沉积中，不使用偏压功率，以及氩气流量约为80sccm并且氧气流量约为0sccm。在400×500mm的全部衬底区域上面都实现了约1.45μm/小时的沉积速率。此外，如在图5A所示的横截面中说明，实现了LiCoO2的<101>取向。 
图5A中所示的LiCoO2层的沉积速率很高，可能归因于陶瓷LiCoO2氧化物溅射靶的较高电导率或较低电阻率。使用欧姆计，在靶12表面上的约 4cm的距离上测量出10千欧姆的靶电阻。这种高速率可以在宽的区域上，在短时间内以高速率制备电池所需的等于或厚于3微米的LiCoO2层，从而导致很高的生产率和很低的成本。在这种低的靶功率下，通过相同测量技术在相同距离上测量的数量级约为500kΩ或更高的靶电阻不允许这种高溅射效率或高沉积速率。常规的靶材料的电阻可能是高得不可测量。在约4cm的表面上的100kΩ的电阻导致高溅射效率和高沉积效率。此外，因为沉积速率典型地与靶功率几乎成直线比例，所以在6kW的沉积产生约3μm/小时的沉积速率，这样的沉积速率对于Li基薄膜固态电池在400×500mm2的表面面积上的可制造性是很适宜的沉积速率。 
图5B中所示的LiCoO2层是在作为表I中的实施例7列举的条件下沉积的。此外，在沉积中没有使用偏压。使用约72sccm的氩气流量和约8sccm的氧气流量。沉积速率显著降低至约0.85μm/小时。此外，尽管可以辨别<101>结晶，但是<101>结晶在图5A中所示的膜的沉积中不是明显显示的。 
图5C中所示的LiCoO2膜是根据表I中的实施例3沉积的。在这种沉积中，将100W的偏压功率施加到衬底上。此外，使用72sccm的氩气流量和8sccm的氧气流量。沉积速率约为0.67μm/小时。因此，与图5B中所示的LiCoO2膜相比，偏压的施加进一步降低沉积速率(从图5B中所示的实施例的0.85μm/小时降低至图5C中所示的实施例的0.67μm/小时)。此外，形成的晶体的需要的<101>方向性显得进一步降低。 
图5D中所示的LiCoO2膜对应表I中的实施例4。在这种沉积中，增加Ar/O2的比率。如图5D中所示，增加Ar/O2的比率提高结晶性。相对于在图5C中说明的实施例，使用约76sccm的氩气流和约4sccm的氧气流以及保持对衬底的100W偏压，进行在图5D中说明的沉积。LiCoO2的沉积速率从在图5C中说明的0.67μm/小时的速率提高至0.79μm/小时。 
在图5E中说明的示例性沉积对应在表I中的实施例5。将衬底温度设定在约200℃，同时将偏压功率保持在约100W。将氩气流量设定在约76sccm，并且将氧气流量设定在约4sccm。得到的LiCoO2层的沉积速率约为0.74μm/小时。 
在表I的实施例6中，将氩气流量设定在约74sccm并且将氧气流量设定在约6sccm，从而导致约0.67μm/小时的LiCoO2沉积速率。因此，相对于在 图5E中说明的沉积，增加氩气和氧气流量这两者导致更低的沉积速率。 
数据清楚地表明沉积原样的LiCoO2结晶膜可以是在如表II所示的几个工艺操作条件下获得的。具体是，对于根据本发明的实施方案的工艺操作条件，获得了在低功率下的非常高的沉积速率，并且同时获得了取向晶体结构。 
图6A说明了根据本发明的一些实施方案在薄衬底601上沉积的LiCoO2层602。使用沉积在薄衬底601上的结晶LiCoO2阴极膜602，可以实现更高的锂离子迁移率，所述薄衬底601具有与电池层叠体本身的厚度相当的厚度，而不是具有电池层叠体的厚度的多倍或几十倍的厚度。这种膜可以导致更快的充电和放电速率。衬底601可以由薄金属片(例如铝、钛、不锈钢或其它适合的薄金属片)形成，可以由聚合物或塑料材料形成，或者可以由陶瓷或玻璃材料形成。如图6B中所示，如果衬底601是绝缘材料，则可以在衬底601和LiCoO2层602之间沉积导电层603。 
在薄衬底上沉积材料包括在沉积过程中固定并且放置衬底。图7A、7B、7C和7D说明了用于固定薄膜衬底的可重复使用的固定装置700。如图7A中所示，可重复使用的固定装置700包含咬在一起的顶部701和底部702。将薄衬底601放置在顶部701和底部702之间。如图7B中所示，顶部701和底部702使衬底601被施加张力，随后在顶部701靠近底部702时被夹住。通过固定装置700可以容易地固定衬底601，因而可以将衬底601处理并且定位。在一些实施方案中，将衬底601的拐角即区域703除去，使得在顶部701靠近底部702时，因避免了″卷绕″拐角夹紧作用而使衬底601更容易拉伸。 
如图7C中所示，可以将掩模712附着在固定装置700上。在一些实施方案中，固定装置700包含导向装置以使固定装置700对准掩模712。在一些实施方案中，可以将掩模712附着在固定装置700上，并且与固定装置700一起移动。可以将掩模712放置在固定装置700中的衬底601上的任何适宜的高度。因此，掩模712可以起着接触或接近式的掩模的作用。在一些实施方案中，掩模712由装配在类似于固定装置700的固定装置中的另一个薄衬底形成。 
如图7C和7D中所示，可以将固定装置700和掩模712相对于支架710放置。例如，支架710可以是如图1A和1B所示的处理室的基座、支架或静电 吸盘。固定装置700和掩模712可以具有允许相互容易对准以及与支架710容易对准的结构元件。在一些实施方案中，掩模712在处理室中是固有的，并且如图7D中所示，并且在将固定装置700定位在支架710上的过程中与固定装置700对准。 
使用如图7A、7B、7C和7D中所示的固定装置700允许在处理室中处理薄膜衬底。在一些实施方案中，薄膜衬底可以约为10μm或更大。此外，一旦装配在固定装置700中，就可以将薄膜衬底601处理并且从处理室移动到处理室。因此，可以使用多处理室系统形成包含一层或多层根据本发明实施方案沉积的LiCoO2层的层叠体。 
图8说明了用于处理薄膜衬底的聚集型设备800。例如，聚集型设备800可以包含加载锁(load lock)802和加载锁803，通过所述加载锁装载被装配的薄膜衬底601并且从聚集型设备800中取出得到的装置。室804、805、806、807和808是用于材料的沉积、热处理、蚀刻或其它处理的处理室。室804、805、806、807和808中的一个或多个可以是上述相对于图1A和1B所述的脉冲调制的DC PVD室，并且在这些室中可以沉积根据本发明实施方案沉积的LiCoO2膜。 
处理室804、805、806、807和808以及加载锁802和803通过传输室801连接。传输室801包含在处理室804、805、806、807及808与加载锁802及803之间来回移动各个晶片的衬底传输机械手臂。 
在常规的薄膜电池的制造中，将陶瓷衬底装载到加载锁803中。可以在室804中沉积薄金属层，随后在室805中进行LiCoO2沉积。然后通过加载锁803取出衬底，以在聚集型设备800外面的空气中进行热处理。然后通过加载锁802将处理后的晶片再次装载到聚集型设备800中。可以在室806中沉积LiPON层。然后再次将所述晶片从聚集型设备800中取出以沉积锂阳极层，或者有时可以改装室807以沉积锂阳极层。在室808中沉积第二金属层以形成充电集电极和阳极集电极。然后将完成的电池结构体从聚集型设备800中通过加载锁802卸载。通过在传输室801中的机械手臂在室间来回移动晶片。 
根据本发明制造的电池结构体可以使用装载到固定装置如固定装置700中的薄膜衬底。然后将固定装置700装载到加载锁803中。室804还可以 包括导电层的沉积。然后室805包括根据本发明实施方案的LiCoO2层的沉积。然后可以在室806中沉积LiPON层。还可以改装室807以沉积富锂材料如锂金属，并且可以将室808用于沉积集电极的导电层。在这种方法中，没有使用热处理来使LiCoO2层结晶。 
薄膜电池工艺的另一个优点是层叠电池结构体的能力。换句话说，装载到聚集型设备800中的衬底可以多次通过处理室804、805、806、807和808，以制造多重层叠的电池结构体。图9A和9B示出了这些电池结构体。 
图9A示出了平行结合的层叠体。如图9A中所示，将例如可以是塑料衬底的衬底601装载到加载锁803中。导电层603，例如约2μm的铝、铜、铱或其它材料作为底部的集电极。例如，导电层603可以在室804中进行沉积。然后在导电层603上沉积LiCoO2层602。根据本发明的实施方案，LiCoO2层602可以是约3-10μm，并且可以在室805中进行沉积。然后可以将晶片移动到室806中，在此可以沉积厚度为约.5至约2μm的LiPON层901。在室807中，然后可以在其内沉积阳极层902，例如，高达约10μm的锂金属层。然后在阳极层902上面沉积第二导电层903。然后可以在第一电池层叠体上面沉积第二电池层叠体，所述第一电池层叠体由金属层603、LiCoO2层602、LiPON层901、锂层902和集电导电层903形成。在集电导电层903上面，形成另一个锂层902。在锂层902上面形成另一个LiPON层901。在LiPON层901上面形成另一个LiCoO2层602，最后在LiCoO2层602上面形成另一个金属层603。在一些实施方案中，可以形成另外的层叠体。在一些实施方案中，金属层603和903在用于沉积的掩模方面不同，以形成用于将层电连接的小突起。 
如上所述，可以形成任意多个独立的电池层叠体，以形成平行的电池结构。这种电池层叠结构的平行配置可以表示为：集电极/LiCoO2/LiPON/阳极/集电极/阳极/LiPON/LiCoO2/集电极/LiCoO2.../集电极。图9B示出了相应电池结构的备选层叠体：集电极/LiCoO2/LiPON/阳极/集电极/LiCoO2/LiPON/阳极/集电极.../集电极。在这种情况下，因为各个电池层叠体共用阳极，所以形成串联配置的电池层叠结构。 
为了形成在图9A和9B中所示的结构，再次将衬底循环(rotate)通过聚集型设备800的室中以沉积多组电池。通常，以这种方式可以形成任意多个 电池的层叠体。 
在一些实施方案中，可以在铱上沉积化学计量的LiCoO2。图10A至10D说明了用于在已经沉积于Si晶片上的铱层上面沉积Li-Co的退火过程。如上所述，在靶功率为2kW、没有偏压功率、反向时间为1.6μs、脉冲频率为300kHz、Ar流为60sccm并且O2流为20sccm、没有预处理、历时7200秒的情况下完成LiCoO2沉积。结果，沉积出约1.51μm的LiCoO2层。 
图10A至10D显示了如上所述沉积的LiCoO2的沉积原样层和退火层的XRD分析。沉积原样层的XRD分析证实了表示结晶LiCoO2的<003>取向的在2θ＝18.85°的弱峰、与需要的<101>晶体方向一致的约在2θ＝38.07°的较尖锐峰和与铱的<111>方向对应的在2θ＝40.57°的峰。然而，<101>LiCoO2峰的位置表明<101>LiCoO2峰是非化学计量的LiCoO2。为了有利于用作电池层，化学计量的LiCoO2提供最好的Li迁移。本领域普通技术人员应该注意到仔细调节沉积参数可以提供适宜取向的化学计量的LiCoO2。 
图10B显示了图10A中所示的样品在空气中于300℃退火2小时之后的XRD分析。如图10B中所示，对应<003>LiCoO2的XRD峰增强，表明进入<003>方向内的LiCoO2结晶。此外，LiCoO2的<101>峰稍稍位移至2θ＝38.53°，表明<101>LiCoO2的更接近化学计量的结晶。然而，在这种退火之后，结晶LiCoO2仍然不是化学计量的。本领域普通技术人员应该注意到退火温度等于或小于300℃的情况下，退火越久和/或进一步调节沉积的化学计量可以导致有用取向的化学计量的LiCoO2层。因此，低温材料如聚合物、玻璃或金属可以用作衬底。 
图10C说明了来自在空气中进行2小时后续的500℃退火之后的样品的XRD分析。如图10C中所示，更多的LiCoO2结晶成<003>层。此外，<101>LiCoO2峰再次位移至2θ＝39.08°，表明LiCoO2的<012>层的结晶。在这种情况下，<012>LiCoO2晶体是化学计量的，因此允许有效的Li迁移。本领域普通技术人员应该注意到在退火温度等于或小于500℃的情况下，退火越久和/或进一步调节沉积的化学计量可以导致有用取向的化学计量的LiCoO2层。因此，低温材料如聚合物、玻璃或金属可以用作衬底。 
图10D说明了在空气中进行2小时后续的700℃退火之后的样品的XRD分析。如图10D中所示，<003>LiCoO2峰消失，但是<012>LiCoO2峰相对仍 然与图10C中说明的在500°退火所显示的峰相同。 
图10A至10D证实了<101>LiCoO2在铱层上面的低温沉积。后续的500℃退火可以是适宜的，以改变<101>LiCoO2层的化学计量，但是700℃退火看来是不必要的。在退火温度小于500℃的情况下，可以在玻璃、铝箔、塑料或其它低温衬底材料上实现LiCoO2层在导电铱层上的沉积。退火温度小于500℃但大于300℃或延长低温退火时间还可以导致化学计量的结晶LiCoO2的需要的取向。 
图11A至11D说明根据本发明一些实施方案的单层电池的形成。如图11A中所示，可以在衬底1101上沉积剥离层1102。此外，可以在剥离层1102上面沉积铱层1103。在一些实施方案中，衬底1101可以是塑料、玻璃、Al箔、Si晶片或任何其它材料。剥离层1102可以是任何剥离层，并且可以是聚合物层如聚酰亚胺、无机层如CaF2或碳，或由于例如氧化、热或光而丧失其粘附性的粘合剂层。剥离层是熟知的。铱层1103可以是约 
Figure GSA00000088783800171
或更厚。 
如图11B中所示，如上所述，在铱层1103上面沉积LiCoO2层。在一些实施方案中，可以在该步骤进行退火。在一些实施方案中，可以在进行退火步骤之前沉积另外的电池层。在一些实施方案中，有用的结晶取向的化学计量的LiCoO2层可以在无需进一步退火的情况下导致沉积原样的LiCoO2。 
图11C说明了LiPON层1105在LiCoO2层上面的沉积、Li层1106在LiPON层1105上面的沉积和电极层1107在Li层1106上面的沉积。在一些实施方案中，在此可以进行如上所述高达500℃的退火步骤。 
如图11D中所示，可以从衬底1101上″剥离″所得的单个的层电池，所述单个的层电池由铱层1103、LiCoO2层1104、LiPON层1105、Li层1106和电极层1107形成。这种单个的层电池可以是厚度约为5μm或更大的自支撑电池。在无需衬底1101的情况下，熟知的是这种电池具有大于约1kW-小时/升的储能能力。 
作为如图11A至11D中所述的剥离方法的备选方案，可以在退火过程中除去衬底，从而留下单个的层电池。此外，在一些实施方案中，可以使用溶剂、蚀刻或光处理除去衬底1101。此外，可以将单个的层电池以任何方式组合或层叠以提供在特定电压下具有更大储能的装置。 
图12A说明了在Al2O3衬底上沉积原样的LiCoO2膜(表I中的实施例32)的XRD分析。观察到宽的<003>结晶LiCoO2峰。在分析中的其余峰(没有在图12A中标记)由Al2O3衬底产生。<003>峰是在根据本发明的实施方案的沉积原样的结晶LiCoO2膜中的层状结构的特征。 
图12B说明了在图12A中所示的LiCoO2膜在2小时的700℃退火之后的结晶性。如图12B中所示，<003>峰变得更尖锐且更高，表明更好的结晶性。如图12G至12J中所示，与12C至12F相比，柱状结构随着退火熟化，并且晶粒尺寸随着退火变得更大。图12B也显示了<012>和<006>结晶峰。 
图12C至12F显示了与图I中的实施例32对应的沉积原样膜的粒度的SEM照片。图12G至12J显示了如图12B中说明的退火膜的粒度的SEM照片。图12C至12F与图12G至12J的比较说明退火处理产生增加的粒度。 
图12K说明了与表I中的实施例31对应的沉积原样结晶膜的形貌的断裂横截面SEM。图12L说明了根据表I中的实施例32生长的膜的类似的横截面SEM。 
本领域技术人员应该认识到在本公开中具体论述的实施例的变化和修改。这些变化和修改意在本公开的范围和精神之内。同样，所述范围只受到后附权利要求的限制。 
Figure GSA00000088783800191
表II 
Figure GSA00000088783800211

Claims (13)

1.一种电池结构体，所述电池结构体包含：
在低温衬底上面沉积的结晶LiCoO2层，其中所述结晶LiCoO2层具有在
Figure FSA00000088783700011
至
Figure FSA00000088783700012
之间的晶粒大小。
2.权利要求1所述的结构体，所述结构体还包含在所述结晶LiCoO2层和所述低温衬底之间沉积的第一导电层。
3.权利要求2所述的结构体，其中所述导电层是铱层。
4.权利要求1所述的结构体，所述结构体还包含在所述LiCoO2层上面沉积的LiPON层。
5.权利要求2所述的结构体，所述结构体还包含在所述LiCoO2层上面沉积的第二导电层。
6.一种层叠电池结构体，其包含：
在薄衬底上沉积的一个或多个电池层叠体，其中每一个电池层叠体包含：
导电层，
在所述导电层上面作为结晶层沉积的LiCoO2层，其中所述结晶LiCoO2层具有在
Figure FSA00000088783700013
至
Figure FSA00000088783700014
之间的晶粒大小，
在所述结晶LiCoO2层上面沉积的LiPON层，
在所述LiPON层上面沉积的阳极层；和
在所述一个或多个电池层叠体上面沉积的顶部导电层。
7.权利要求6所述的层叠电池结构体，其中所述电池层叠体形成平行层叠的电池结构体。
8.权利要求6所述的层叠电池结构体，其中所述电池层叠体形成串联层叠的电池结构体。
9.权利要求6所述的层叠电池结构体，其中所述导电层是沉积在衬底上的金属层。
10.权利要求6所述的层叠电池结构体，其中所述金属层是铱层。
11.权利要求9所述的层叠电池结构体，其中所述衬底是低温衬底。
12.权利要求6所述的层叠电池结构体，其中所述导电层是金属箔。
13.权利要求12所述的层叠电池结构体，其中所述金属箔由来自铜、金、铝、不锈钢和其它镍或钴基超耐热不锈钢(super alloy)所组成的组中的金属形成。
CN2010101615170A 2004-12-08 2005-12-07 LiCoO2的沉积 Expired - Fee Related CN101931097B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US63481804P 2004-12-08 2004-12-08
US60/634,818 2004-12-08
US65136305P 2005-02-08 2005-02-08
US60/651,363 2005-02-08

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2005800423058A Division CN101073171B (zh) 2004-12-08 2005-12-07 LiCoO2的沉积

Publications (2)

Publication Number Publication Date
CN101931097A true CN101931097A (zh) 2010-12-29
CN101931097B CN101931097B (zh) 2012-11-21

Family

ID=36578644

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010101615170A Expired - Fee Related CN101931097B (zh) 2004-12-08 2005-12-07 LiCoO2的沉积

Country Status (9)

Country Link
US (3) US8636876B2 (zh)
EP (1) EP1825545B1 (zh)
JP (1) JP5095412B2 (zh)
KR (2) KR101127370B1 (zh)
CN (1) CN101931097B (zh)
AT (1) ATE447777T1 (zh)
DE (1) DE602005017512D1 (zh)
TW (2) TWI331634B (zh)
WO (1) WO2006063308A2 (zh)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103066239A (zh) * 2011-10-21 2013-04-24 捷讯研究有限公司 用于较高能量密度和较薄电池的凹入接头
US9142840B2 (en) 2011-10-21 2015-09-22 Blackberry Limited Method of reducing tabbing volume required for external connections
CN106252589A (zh) * 2015-06-12 2016-12-21 联想(北京)有限公司 一种柔性电池及柔性电池组
CN108232320A (zh) * 2018-02-08 2018-06-29 天津瑞晟晖能科技有限公司 全固态薄膜锂离子电池的制备方法及全固态薄膜锂离子电池
US10446828B2 (en) 2011-10-21 2019-10-15 Blackberry Limited Recessed tab for higher energy density and thinner batteries
CN111176046A (zh) * 2018-11-12 2020-05-19 中国科学院上海硅酸盐研究所 一种钴酸锂薄膜及其制备方法和应用

Families Citing this family (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030175142A1 (en) * 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
US7378356B2 (en) * 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US6884327B2 (en) * 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US8535396B2 (en) 2002-08-09 2013-09-17 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8404376B2 (en) * 2002-08-09 2013-03-26 Infinite Power Solutions, Inc. Metal film encapsulation
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
TWI274199B (en) 2002-08-27 2007-02-21 Symmorphix Inc Optically coupling into highly uniform waveguides
CN1756856B (zh) * 2003-02-27 2011-10-12 希莫菲克斯公司 电介质阻挡层膜
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7238628B2 (en) * 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US8636876B2 (en) * 2004-12-08 2014-01-28 R. Ernest Demaray Deposition of LiCoO2
US7846579B2 (en) * 2005-03-25 2010-12-07 Victor Krasnov Thin film battery with protective packaging
US8679674B2 (en) 2005-03-25 2014-03-25 Front Edge Technology, Inc. Battery with protective packaging
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US8197781B2 (en) 2006-11-07 2012-06-12 Infinite Power Solutions, Inc. Sputtering target of Li3PO4 and method for producing same
US7862627B2 (en) * 2007-04-27 2011-01-04 Front Edge Technology, Inc. Thin film battery substrate cutting and fabrication process
JP2009009897A (ja) * 2007-06-29 2009-01-15 Sumitomo Electric Ind Ltd 全固体薄膜電池、その製造方法およびその製造装置
WO2009014394A2 (en) * 2007-07-25 2009-01-29 Nuricell, Inc. Method for depositing ceramic thin film by sputtering using non-conductive target
US8628645B2 (en) * 2007-09-04 2014-01-14 Front Edge Technology, Inc. Manufacturing method for thin film battery
US9334557B2 (en) 2007-12-21 2016-05-10 Sapurast Research Llc Method for sputter targets for electrolyte films
JP5705549B2 (ja) 2008-01-11 2015-04-22 インフィニット パワー ソリューションズ， インコーポレイテッド 薄膜電池および他のデバイスのための薄膜カプセル化
JP2009187682A (ja) * 2008-02-01 2009-08-20 Ulvac Japan Ltd カソード電極の製造方法及び薄膜固体リチウムイオン２次電池の製造方法
JP5396717B2 (ja) * 2008-02-12 2014-01-22 住友電気工業株式会社 リチウム電池、リチウム電池用正極およびその製造方法
JP2009199920A (ja) * 2008-02-22 2009-09-03 Sumitomo Electric Ind Ltd リチウム電池
US9136569B2 (en) 2008-05-21 2015-09-15 Applied Materials, Inc. Microwave rapid thermal processing of electrochemical devices
US8568571B2 (en) * 2008-05-21 2013-10-29 Applied Materials, Inc. Thin film batteries and methods for manufacturing same
EP2319101B1 (en) 2008-08-11 2015-11-04 Sapurast Research LLC Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US8916293B2 (en) 2008-12-24 2014-12-23 Ngk Insulators, Ltd. Plate-like particle for cathode active material for lithium secondary battery, cathode active material film for lithium secondary battery, methods for manufacturing the particle and film, method for manufacturing cathode active material for lithium secondary battery, and lithium secondary battery
CN102171867A (zh) * 2008-12-24 2011-08-31 日本碍子株式会社 锂二次电池的正极活性物质用的板状粒子、同物质膜及锂二次电池
US20100173204A1 (en) * 2008-12-24 2010-07-08 Ngk Insulators, Ltd. Plate-like particle for cathode active material of a lithium secondary battery, a cathode active material film of a lithium secondary battery, method for manufacturing the same, method for manufacturing a cathode active material of a lithium secondary battery, and a lithium secondary battery
WO2010074302A1 (ja) * 2008-12-24 2010-07-01 日本碍子株式会社 リチウム二次電池の正極活物質用の板状粒子、及び同物質膜、並びにリチウム二次電池
CN102171864A (zh) * 2008-12-24 2011-08-31 日本碍子株式会社 锂二次电池的正极活性物质用的板状粒子、同物质膜及锂二次电池
WO2010074313A1 (ja) * 2008-12-24 2010-07-01 日本碍子株式会社 リチウム二次電池の正極活物質用の板状粒子、及び同物質膜、並びにリチウム二次電池
JP5247570B2 (ja) * 2009-04-14 2013-07-24 株式会社アルバック 薄膜リチウム二次電池製造装置及び薄膜リチウム二次電池製造方法
US20100291431A1 (en) * 2009-05-13 2010-11-18 Front Edge Technology, Inc. Thin film battery with protective packaging
FR2946462B1 (fr) * 2009-06-09 2011-07-01 Commissariat Energie Atomique Procede de realisation d'au moins un microcomposant avec un masque unique
US8502494B2 (en) * 2009-08-28 2013-08-06 Front Edge Technology, Inc. Battery charging apparatus and method
EP2474056B1 (en) 2009-09-01 2016-05-04 Sapurast Research LLC Printed circuit board with integrated thin film battery
US8580332B2 (en) * 2009-09-22 2013-11-12 Applied Materials, Inc. Thin-film battery methods for complexity reduction
US8464419B2 (en) * 2009-09-22 2013-06-18 Applied Materials, Inc. Methods of and factories for thin-film battery manufacturing
US20110300432A1 (en) 2010-06-07 2011-12-08 Snyder Shawn W Rechargeable, High-Density Electrochemical Device
US8404001B2 (en) * 2011-04-15 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing positive electrode and power storage device
JP5825883B2 (ja) * 2011-06-30 2015-12-02 株式会社アルバック 薄膜リチウム二次電池形成装置
US9905838B2 (en) * 2011-08-30 2018-02-27 Gs Yuasa International Ltd. Electrode and method of manufacturing the same
US8865340B2 (en) 2011-10-20 2014-10-21 Front Edge Technology Inc. Thin film battery packaging formed by localized heating
US9887429B2 (en) 2011-12-21 2018-02-06 Front Edge Technology Inc. Laminated lithium battery
US8864954B2 (en) 2011-12-23 2014-10-21 Front Edge Technology Inc. Sputtering lithium-containing material with multiple targets
US9077000B2 (en) 2012-03-29 2015-07-07 Front Edge Technology, Inc. Thin film battery and localized heat treatment
US9257695B2 (en) 2012-03-29 2016-02-09 Front Edge Technology, Inc. Localized heat treatment of battery component films
JP6276259B2 (ja) * 2012-06-26 2018-02-07 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 電気化学デバイスのマイクロ波急速熱処理
US20140030449A1 (en) * 2012-07-26 2014-01-30 Applied Materials, Inc. Electrochemical device fabrication process with low temperature anneal
US9159964B2 (en) 2012-09-25 2015-10-13 Front Edge Technology, Inc. Solid state battery having mismatched battery cells
US8753724B2 (en) 2012-09-26 2014-06-17 Front Edge Technology Inc. Plasma deposition on a partially formed battery through a mesh screen
JP6015297B2 (ja) * 2012-09-26 2016-10-26 富士通株式会社 リチウムイオン二次電池
US9356320B2 (en) 2012-10-15 2016-05-31 Front Edge Technology Inc. Lithium battery having low leakage anode
WO2014209497A1 (en) * 2013-06-26 2014-12-31 Itn Energy Systems, Inc. Waveform for improved energy control of sputtered species
WO2015029290A1 (ja) * 2013-08-29 2015-03-05 パナソニックＩｐマネジメント株式会社 全固体リチウム二次電池
US20160070296A1 (en) * 2014-09-04 2016-03-10 Applejack 199 L.P. Wearable devices
US9455437B2 (en) 2014-10-08 2016-09-27 Intermolecular, Inc. Solid-state batteries utilizing template layers for electrode formation and methods for forming the same
US9627709B2 (en) * 2014-10-15 2017-04-18 Sakti3, Inc. Amorphous cathode material for battery device
US10008739B2 (en) 2015-02-23 2018-06-26 Front Edge Technology, Inc. Solid-state lithium battery with electrolyte
US10141564B2 (en) * 2016-03-31 2018-11-27 GM Global Technology Operations LLC Lithium titanate structures for lithium ion batteries formed using element selective sputtering
CN107488832B (zh) * 2016-06-12 2019-11-29 北京北方华创微电子装备有限公司 沉积设备以及物理气相沉积腔室
JP6486410B2 (ja) * 2016-07-12 2019-03-20 ウォニク アイピーエス カンパニー リミテッド 基板処理システム及び基板処理方法
EP3327837A1 (en) * 2016-11-23 2018-05-30 Eidgenössische Materialprüfungs- und Forschungsanstalt EMPA Li-ion based electrochemical energy storage cell
US10581109B2 (en) 2017-03-30 2020-03-03 International Business Machines Corporation Fabrication method of all solid-state thin-film battery
US10622680B2 (en) 2017-04-06 2020-04-14 International Business Machines Corporation High charge rate, large capacity, solid-state battery
GB2588944B (en) * 2019-11-15 2022-08-17 Dyson Technology Ltd Method of forming crystalline layer, method of forming a battery half cell

Family Cites Families (695)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US712316A (en) 1899-10-26 1902-10-28 Francois Loppe Electric accumulator.
US2970180A (en) 1959-06-17 1961-01-31 Union Carbide Corp Alkaline deferred action cell
US3309302A (en) 1963-10-07 1967-03-14 Varian Associates Method of preparing an electron tube including sputtering a suboxide of titanium on dielectric components thereof
US3616403A (en) 1968-10-25 1971-10-26 Ibm Prevention of inversion of p-type semiconductor material during rf sputtering of quartz
GB1365492A (en) 1971-02-05 1974-09-04 Triplex Safety Glass Co Metal oxide films
US3790432A (en) 1971-12-30 1974-02-05 Nasa Reinforced polyquinoxaline gasket and method of preparing the same
US3797091A (en) 1972-05-15 1974-03-19 Du Pont Terminal applicator
US3850604A (en) 1972-12-11 1974-11-26 Gte Laboratories Inc Preparation of chalcogenide glass sputtering targets
US4111523A (en) 1973-07-23 1978-09-05 Bell Telephone Laboratories, Incorporated Thin film optical waveguide
US3939008A (en) 1975-02-10 1976-02-17 Exxon Research And Engineering Company Use of perovskites and perovskite-related compounds as battery cathodes
US4099091A (en) 1976-07-28 1978-07-04 Matsushita Electric Industrial Co., Ltd. Electroluminescent panel including an electrically conductive layer between two electroluminescent layers
US4127424A (en) 1976-12-06 1978-11-28 Ses, Incorporated Photovoltaic cell array
US4082569A (en) 1977-02-22 1978-04-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Solar cell collector
DE2849294C3 (de) 1977-11-22 1982-03-04 Asahi Kasei Kogyo K.K., Osaka Dünne Metall-Halogen-Zelle und Verfahren zu ihrer Herstellung
IE49121B1 (en) 1978-12-11 1985-08-07 Triplex Safety Glass Co Producing glass sheets of required curved shape
US4318938A (en) 1979-05-29 1982-03-09 The University Of Delaware Method for the continuous manufacture of thin film solar cells
US4442144A (en) 1980-11-17 1984-04-10 International Business Machines Corporation Method for forming a coating on a substrate
US5055704A (en) 1984-07-23 1991-10-08 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with battery housing
US4664993A (en) 1981-08-24 1987-05-12 Polaroid Corporation Laminar batteries and methods of making the same
US4756717A (en) 1981-08-24 1988-07-12 Polaroid Corporation Laminar batteries and methods of making the same
JPS58216476A (ja) 1982-06-11 1983-12-16 Hitachi Ltd 光発電蓄電装置
JPS5950027A (ja) 1982-09-13 1984-03-22 Hitachi Ltd 二硫化チタン薄膜およびその形成法
US4518661A (en) 1982-09-28 1985-05-21 Rippere Ralph E Consolidation of wires by chemical deposition and products resulting therefrom
US4437966A (en) 1982-09-30 1984-03-20 Gte Products Corporation Sputtering cathode apparatus
JPS59217964A (ja) 1983-05-26 1984-12-08 Hitachi Ltd 薄膜電池の正極構造
JPS59227090A (ja) 1983-06-06 1984-12-20 Hitachi Ltd 不揮発性メモリ装置
DE3345659A1 (de) 1983-06-16 1984-12-20 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Keramikkoerper aus zirkoniumdioxid (zro(pfeil abwaerts)2(pfeil abwaerts)) und verfahren zu seiner herstellung
AU573631B2 (en) 1983-10-17 1988-06-16 Tosoh Corporation High strength zirconia type sintered body
DE3417732A1 (de) 1984-05-12 1986-07-10 Leybold-Heraeus GmbH, 5000 Köln Verfahren zum aufbringen von siliziumhaltigen schichten auf substraten durch katodenzerstaeubung und zerstaeubungskatode zur durchfuehrung des verfahrens
GB8414878D0 (en) 1984-06-11 1984-07-18 Gen Electric Co Plc Integrated optical waveguides
JPH06101335B2 (ja) 1984-11-26 1994-12-12 株式会社日立製作所 全固体リチウム電池
US4785459A (en) 1985-05-01 1988-11-15 Baer Thomas M High efficiency mode matched solid state laser with transverse pumping
KR910000273B1 (ko) 1985-05-09 1991-01-23 마쯔시다덴기산교 가부시기가이샤 플라즈마 처리장치
US4710940A (en) 1985-10-01 1987-12-01 California Institute Of Technology Method and apparatus for efficient operation of optically pumped laser
US5296089A (en) 1985-12-04 1994-03-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
US5173271A (en) 1985-12-04 1992-12-22 Massachusetts Institute Of Technology Enhanced radiative zone-melting recrystallization method and apparatus
US4964877A (en) 1986-01-14 1990-10-23 Wilson Greatbatch Ltd. Non-aqueous lithium battery
JPS62266732A (ja) * 1986-05-15 1987-11-19 Tohoku Metal Ind Ltd 垂直磁気記録媒体の製造方法
US4668593A (en) 1986-08-29 1987-05-26 Eltron Research, Inc. Solvated electron lithium electrode for high energy density battery
US4977007A (en) 1986-09-19 1990-12-11 Matsushita Electrical Indust. Co. Solid electrochemical element and production process therefor
US5292393A (en) * 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
US4740431A (en) 1986-12-22 1988-04-26 Spice Corporation Integrated solar cell and battery
US4728588A (en) 1987-06-01 1988-03-01 The Dow Chemical Company Secondary battery
US4865428A (en) 1987-08-21 1989-09-12 Corrigan Dennis A Electrooptical device
JP2692816B2 (ja) 1987-11-13 1997-12-17 株式会社きもと 薄型一次電池
US4826743A (en) 1987-12-16 1989-05-02 General Motors Corporation Solid-state lithium battery
US5141603A (en) 1988-03-28 1992-08-25 The United States Of America As Represented By The Secretary Of The Air Force Capacitor method for improved oxide dielectric
US4878094A (en) 1988-03-30 1989-10-31 Minko Balkanski Self-powered electronic component and manufacturing method therefor
US4915810A (en) 1988-04-25 1990-04-10 Unisys Corporation Target source for ion beam sputter deposition
US4903326A (en) 1988-04-27 1990-02-20 Motorola, Inc. Detachable battery pack with a built-in broadband antenna
US5096852A (en) 1988-06-02 1992-03-17 Burr-Brown Corporation Method of making plastic encapsulated multichip hybrid integrated circuits
JP2501118B2 (ja) 1988-06-17 1996-05-29 忠弘 大見 半導体装置の製造方法
US5403680A (en) 1988-08-30 1995-04-04 Osaka Gas Company, Ltd. Photolithographic and electron beam lithographic fabrication of micron and submicron three-dimensional arrays of electronically conductive polymers
FR2638764B1 (fr) 1988-11-04 1993-05-07 Centre Nat Rech Scient Element composite comportant une couche en chalcogenure ou oxychalcogenure de titane, utilisable en particulier comme electrode positive dans une cellule electrochimique en couches minces
JPH02133599A (ja) 1988-11-11 1990-05-22 Agency Of Ind Science & Technol 酸化イリジウム膜の製造方法
US5006737A (en) 1989-04-24 1991-04-09 Motorola Inc. Transformerless semiconductor AC switch having internal biasing means
US5100821A (en) 1989-04-24 1992-03-31 Motorola, Inc. Semiconductor AC switch
JP2808660B2 (ja) 1989-05-01 1998-10-08 ブラザー工業株式会社 薄膜電池内蔵プリント基板の製造方法
US5217828A (en) 1989-05-01 1993-06-08 Brother Kogyo Kabushiki Kaisha Flexible thin film cell including packaging material
US5540742A (en) 1989-05-01 1996-07-30 Brother Kogyo Kabushiki Kaisha Method of fabricating thin film cells and printed circuit boards containing thin film cells using a screen printing process
US5221891A (en) 1989-07-31 1993-06-22 Intermatic Incorporated Control circuit for a solar-powered rechargeable power source and load
US5119269A (en) 1989-08-23 1992-06-02 Seiko Epson Corporation Semiconductor with a battery unit
US5792550A (en) 1989-10-24 1998-08-11 Flex Products, Inc. Barrier film having high colorless transparency and method
JP2758948B2 (ja) 1989-12-15 1998-05-28 キヤノン株式会社 薄膜形成方法
DE4022090A1 (de) 1989-12-18 1991-06-20 Forschungszentrum Juelich Gmbh Elektro-optisches bauelement und verfahren zu dessen herstellung
US5196374A (en) 1990-01-26 1993-03-23 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with molded cell
US5124782A (en) 1990-01-26 1992-06-23 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with molded cell
US5169408A (en) 1990-01-26 1992-12-08 Fsi International, Inc. Apparatus for wafer processing with in situ rinse
US5252194A (en) 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5085904A (en) 1990-04-20 1992-02-04 E. I. Du Pont De Nemours And Company Barrier materials useful for packaging
US5306569A (en) 1990-06-15 1994-04-26 Hitachi Metals, Ltd. Titanium-tungsten target material and manufacturing method thereof
JP2755471B2 (ja) 1990-06-29 1998-05-20 日立電線株式会社 希土類元素添加光導波路及びその製造方法
US5645626A (en) 1990-08-10 1997-07-08 Bend Research, Inc. Composite hydrogen separation element and module
US5225288A (en) 1990-08-10 1993-07-06 E. I. Du Pont De Nemours And Company Solvent blockers and multilayer barrier coatings for thin films
US5147985A (en) 1990-08-14 1992-09-15 The Scabbard Corporation Sheet batteries as substrate for electronic circuit
US5110694A (en) 1990-10-11 1992-05-05 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Secondary Li battery incorporating 12-Crown-4 ether
US5110696A (en) * 1990-11-09 1992-05-05 Bell Communications Research Rechargeable lithiated thin film intercalation electrode battery
US5273608A (en) 1990-11-29 1993-12-28 United Solar Systems Corporation Method of encapsulating a photovoltaic device
US5493177A (en) 1990-12-03 1996-02-20 The Regents Of The University Of California Sealed micromachined vacuum and gas filled devices
US5057385A (en) 1990-12-14 1991-10-15 Hope Henry F Battery packaging construction
NL9002844A (nl) 1990-12-21 1992-07-16 Philips Nv Systeem omvattende een apparaat en een cassette, alsmede een apparaat en een cassette geschikt voor toepassing in een dergelijk systeem.
CA2056139C (en) 1991-01-31 2000-08-01 John C. Bailey Electrochromic thin film state-of-charge detector for on-the-cell application
US5227264A (en) 1991-02-14 1993-07-13 Hydro-Quebec Device for packaging a lithium battery
US6110531A (en) 1991-02-25 2000-08-29 Symetrix Corporation Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
US5180645A (en) 1991-03-01 1993-01-19 Motorola, Inc. Integral solid state embedded power supply
US5119460A (en) 1991-04-25 1992-06-02 At&T Bell Laboratories Erbium-doped planar optical device
US5200029A (en) 1991-04-25 1993-04-06 At&T Bell Laboratories Method of making a planar optical amplifier
US5107538A (en) 1991-06-06 1992-04-21 At&T Bell Laboratories Optical waveguide system comprising a rare-earth Si-based optical device
US5208121A (en) 1991-06-18 1993-05-04 Wisconsin Alumni Research Foundation Battery utilizing ceramic membranes
US5187564A (en) 1991-07-26 1993-02-16 Sgs-Thomson Microelectronics, Inc. Application of laminated interconnect media between a laminated power source and semiconductor devices
US5153710A (en) 1991-07-26 1992-10-06 Sgs-Thomson Microelectronics, Inc. Integrated circuit package with laminated backup cell
US5171413A (en) 1991-09-16 1992-12-15 Tufts University Methods for manufacturing solid state ionic devices
US5196041A (en) 1991-09-17 1993-03-23 The Charles Stark Draper Laboratory, Inc. Method of forming an optical channel waveguide by gettering
US5355089A (en) 1992-07-22 1994-10-11 Duracell Inc. Moisture barrier for battery with electrochemical tester
JP2755844B2 (ja) 1991-09-30 1998-05-25 シャープ株式会社 プラスチック基板液晶表示素子
US5702829A (en) 1991-10-14 1997-12-30 Commissariat A L'energie Atomique Multilayer material, anti-erosion and anti-abrasion coating incorporating said multilayer material
WO1993011572A1 (fr) 1991-12-06 1993-06-10 Yuasa Corporation Pile mince et pile mince monolitique
SG44695A1 (en) 1991-12-11 1997-12-19 Mobil Oil Corp High barrier film
JPH06145975A (ja) 1992-03-20 1994-05-27 Komag Inc 炭素フィルムをスパタリングする方法及びその製造物
US5287427A (en) 1992-05-05 1994-02-15 At&T Bell Laboratories Method of making an article comprising an optical component, and article comprising the component
US6144916A (en) 1992-05-15 2000-11-07 Micron Communications, Inc. Itinerary monitoring system for storing a plurality of itinerary data points
US5497140A (en) 1992-08-12 1996-03-05 Micron Technology, Inc. Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication
SE9201585L (sv) 1992-05-19 1993-11-01 Gustavsson Magnus Peter M Elektriskt uppvärmt plagg eller liknande
US5779839A (en) 1992-06-17 1998-07-14 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US6741178B1 (en) 1992-06-17 2004-05-25 Micron Technology, Inc Electrically powered postage stamp or mailing or shipping label operative with radio frequency (RF) communication
US5776278A (en) 1992-06-17 1998-07-07 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US6045652A (en) 1992-06-17 2000-04-04 Micron Communications, Inc. Method of manufacturing an enclosed transceiver
US5326652A (en) 1993-01-25 1994-07-05 Micron Semiconductor, Inc. Battery package and method using flexible polymer films having a deposited layer of an inorganic material
DE4345610B4 (de) 1992-06-17 2013-01-03 Micron Technology Inc. Verfahren zur Herstellung einer Hochfrequenz-Identifikationseinrichtung (HFID)
US5338625A (en) 1992-07-29 1994-08-16 Martin Marietta Energy Systems, Inc. Thin film battery and method for making same
US7158031B2 (en) 1992-08-12 2007-01-02 Micron Technology, Inc. Thin, flexible, RFID label and system for use
JP3214910B2 (ja) 1992-08-18 2001-10-02 富士通株式会社 平面導波路型光増幅器の製造方法
US5538796A (en) 1992-10-13 1996-07-23 General Electric Company Thermal barrier coating system having no bond coat
US5597661A (en) 1992-10-23 1997-01-28 Showa Denko K.K. Solid polymer electrolyte, battery and solid-state electric double layer capacitor using the same as well as processes for the manufacture thereof
JP3231900B2 (ja) 1992-10-28 2001-11-26 株式会社アルバック 成膜装置
US5326653A (en) 1992-10-29 1994-07-05 Valence Technology, Inc. Battery unit with reinforced current collector tabs and method of making a battery unit having strengthened current collector tabs
JP3214107B2 (ja) 1992-11-09 2001-10-02 富士電機株式会社 電池搭載集積回路装置
US5789071A (en) 1992-11-09 1998-08-04 Northwestern University Multilayer oxide coatings
US5942089A (en) 1996-04-22 1999-08-24 Northwestern University Method for sputtering compounds on a substrate
JPH06158308A (ja) 1992-11-24 1994-06-07 Hitachi Metals Ltd インジウム・スズ酸化物膜用スパッタリング用ターゲットおよびその製造方法
US5279624A (en) 1992-11-27 1994-01-18 Gould Inc. Solder sealed solid electrolyte cell housed within a ceramic frame and the method for producing it
US5307240A (en) 1992-12-02 1994-04-26 Intel Corporation Chiplid, multichip semiconductor package design concept
US6022458A (en) 1992-12-07 2000-02-08 Canon Kabushiki Kaisha Method of production of a semiconductor substrate
AU669754B2 (en) 1992-12-18 1996-06-20 Becton Dickinson & Company Barrier coating
US5303319A (en) 1992-12-28 1994-04-12 Honeywell Inc. Ion-beam deposited multilayer waveguides and resonators
SE500725C2 (sv) 1992-12-29 1994-08-15 Volvo Ab Anordning vid paneler för farkoster
US5427669A (en) 1992-12-30 1995-06-27 Advanced Energy Industries, Inc. Thin film DC plasma processing system
US5718813A (en) 1992-12-30 1998-02-17 Advanced Energy Industries, Inc. Enhanced reactive DC sputtering system
US5547780A (en) 1993-01-18 1996-08-20 Yuasa Corporation Battery precursor and a battery
US5300461A (en) 1993-01-25 1994-04-05 Intel Corporation Process for fabricating sealed semiconductor chip using silicon nitride passivation film
US5338624A (en) 1993-02-08 1994-08-16 Globe-Union Inc. Thermal management of rechargeable batteries
JPH06279185A (ja) 1993-03-25 1994-10-04 Canon Inc ダイヤモンド結晶およびダイヤモンド結晶膜の形成方法
US5613995A (en) 1993-04-23 1997-03-25 Lucent Technologies Inc. Method for making planar optical waveguides
US5665490A (en) 1993-06-03 1997-09-09 Showa Denko K.K. Solid polymer electrolyte, battery and solid-state electric double layer capacitor using the same as well as processes for the manufacture thereof
SG46607A1 (en) * 1993-07-28 1998-02-20 Asahi Glass Co Ltd Method of an apparatus for sputtering
JP3684593B2 (ja) * 1993-07-28 2005-08-17 旭硝子株式会社 スパッタリング方法およびその装置
US5499207A (en) 1993-08-06 1996-03-12 Hitachi, Ltd. Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same
US5360686A (en) 1993-08-20 1994-11-01 The United States Of America As Represented By The National Aeronautics And Space Administration Thin composite solid electrolyte film for lithium batteries
US5599355A (en) 1993-08-20 1997-02-04 Nagasubramanian; Ganesan Method for forming thin composite solid electrolyte film for lithium batteries
JP2642849B2 (ja) 1993-08-24 1997-08-20 株式会社フロンテック 薄膜の製造方法および製造装置
US5478456A (en) 1993-10-01 1995-12-26 Minnesota Mining And Manufacturing Company Sputtering target
EP0652308B1 (en) 1993-10-14 2002-03-27 Neuralsystems Corporation Method of and apparatus for forming single-crystalline thin film
US5314765A (en) 1993-10-14 1994-05-24 Martin Marietta Energy Systems, Inc. Protective lithium ion conducting ceramic coating for lithium metal anodes and associate method
US5411537A (en) 1993-10-29 1995-05-02 Intermedics, Inc. Rechargeable biomedical battery powered devices with recharging and control system therefor
US5445856A (en) 1993-11-10 1995-08-29 Chaloner-Gill; Benjamin Protective multilayer laminate for covering an electrochemical device
US5985485A (en) 1993-11-19 1999-11-16 Ovshinsky; Stanford R. Solid state battery having a disordered hydrogenated carbon negative electrode
US5738731A (en) 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
US5512387A (en) 1993-11-19 1996-04-30 Ovonic Battery Company, Inc. Thin-film, solid state battery employing an electrically insulating, ion conducting electrolyte material
US5433835B1 (en) 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US5487822A (en) 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
US5387482A (en) 1993-11-26 1995-02-07 Motorola, Inc. Multilayered electrolyte and electrochemical cells used same
US5654984A (en) 1993-12-03 1997-08-05 Silicon Systems, Inc. Signal modulation across capacitors
US5419982A (en) 1993-12-06 1995-05-30 Valence Technology, Inc. Corner tab termination for flat-cell batteries
US5569520A (en) 1994-01-12 1996-10-29 Martin Marietta Energy Systems, Inc. Rechargeable lithium battery for use in applications requiring a low to high power output
US5961672A (en) 1994-02-16 1999-10-05 Moltech Corporation Stabilized anode for lithium-polymer batteries
US5561004A (en) 1994-02-25 1996-10-01 Bates; John B. Packaging material for thin film lithium batteries
US5464706A (en) 1994-03-02 1995-11-07 Dasgupta; Sankar Current collector for lithium ion battery
US6408402B1 (en) 1994-03-22 2002-06-18 Hyperchip Inc. Efficient direct replacement cell fault tolerant architecture
US5475528A (en) 1994-03-25 1995-12-12 Corning Incorporated Optical signal amplifier glasses
US5470396A (en) 1994-04-12 1995-11-28 Amoco Corporation Solar cell module package and method for its preparation
US5805223A (en) 1994-05-25 1998-09-08 Canon Kk Image encoding apparatus having an intrapicture encoding mode and interpicture encoding mode
US5411592A (en) 1994-06-06 1995-05-02 Ovonic Battery Company, Inc. Apparatus for deposition of thin-film, solid state batteries
JP3947575B2 (ja) 1994-06-10 2007-07-25 Ｈｏｙａ株式会社 導電性酸化物およびそれを用いた電極
JP3017538B2 (ja) 1994-06-13 2000-03-13 三井化学株式会社 リチウムイオン伝導性ガラス薄膜を用いた薄型炭酸ガスセンサ
US5472795A (en) 1994-06-27 1995-12-05 Board Of Regents Of The University Of The University Of Wisconsin System, On Behalf Of The University Of Wisconsin-Milwaukee Multilayer nanolaminates containing polycrystalline zirconia
WO1996000996A1 (en) 1994-06-30 1996-01-11 The Whitaker Corporation Planar hybrid optical amplifier
US5457569A (en) 1994-06-30 1995-10-10 At&T Ipm Corp. Semiconductor amplifier or laser having integrated lens
JP3407409B2 (ja) 1994-07-27 2003-05-19 富士通株式会社 高誘電率薄膜の製造方法
US6181283B1 (en) 1994-08-01 2001-01-30 Rangestar Wireless, Inc. Selectively removable combination battery and antenna assembly for a telecommunication device
US5504041A (en) 1994-08-01 1996-04-02 Texas Instruments Incorporated Conductive exotic-nitride barrier layer for high-dielectric-constant materials
US5445906A (en) 1994-08-03 1995-08-29 Martin Marietta Energy Systems, Inc. Method and system for constructing a rechargeable battery and battery structures formed with the method
US5458995A (en) 1994-08-12 1995-10-17 The United States Of America As Represented By The Secretary Of The Army Solid state electrochemical cell including lithium iodide as an electrolyte additive
US5483613A (en) 1994-08-16 1996-01-09 At&T Corp. Optical device with substrate and waveguide structure having thermal matching interfaces
US5909346A (en) 1994-08-26 1999-06-01 Aiwa Research & Development, Inc. Thin magnetic film including multiple geometry gap structures on a common substrate
US5498489A (en) 1995-04-14 1996-03-12 Dasgupta; Sankar Rechargeable non-aqueous lithium battery having stacked electrochemical cells
US5437692A (en) 1994-11-02 1995-08-01 Dasgupta; Sankar Method for forming an electrode-electrolyte assembly
JPH08148709A (ja) 1994-11-15 1996-06-07 Mitsubishi Electric Corp 薄型太陽電池の製造方法及び薄型太陽電池の製造装置
US7162392B2 (en) 1994-11-21 2007-01-09 Phatrat Technology, Inc. Sport performance systems for measuring athletic performance, and associated methods
US6025094A (en) 1994-11-23 2000-02-15 Polyplus Battery Company, Inc. Protective coatings for negative electrodes
US5515387A (en) 1994-12-12 1996-05-07 Trw Inc. Signal independent pulse code modulation data enhancer and associated method
US6204111B1 (en) 1994-12-28 2001-03-20 Matsushita Electronics Corporation Fabrication method of capacitor for integrated circuit
CN1075243C (zh) 1994-12-28 2001-11-21 松下电器产业株式会社 集成电路用电容元件及其制造方法
US5555342A (en) 1995-01-17 1996-09-10 Lucent Technologies Inc. Planar waveguide and a process for its fabrication
US5607789A (en) 1995-01-23 1997-03-04 Duracell Inc. Light transparent multilayer moisture barrier for electrochemical cell tester and cell employing same
AU1834795A (en) 1995-01-25 1996-08-14 Applied Kotmatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5755831A (en) 1995-02-22 1998-05-26 Micron Communications, Inc. Method of forming a button-type battery and a button-type battery with improved separator construction
US6444750B1 (en) 1995-03-06 2002-09-03 Exxonmobil Oil Corp. PVOH-based coating solutions
NL1000138C2 (nl) 1995-04-13 1996-10-15 Od & Me Bv Inrichtingen voor het bewerken van een substraat alsmede werkwijze geschikt voor toepassing bij dergelijke inrichtingen.
US5612153A (en) 1995-04-13 1997-03-18 Valence Technology, Inc. Battery mask from radiation curable and thermoplastic materials
WO1996034124A1 (en) 1995-04-25 1996-10-31 The Boc Group, Inc. Sputtering system using cylindrical rotating magnetron electrically powered using alternating current
US5771562A (en) 1995-05-02 1998-06-30 Motorola, Inc. Passivation of organic devices
EP0834594B1 (en) 1995-05-18 2004-11-10 Asahi Glass Company Ltd. Process for producing sputtering target
US5645960A (en) 1995-05-19 1997-07-08 The United States Of America As Represented By The Secretary Of The Air Force Thin film lithium polymer battery
US5601952A (en) 1995-05-24 1997-02-11 Dasgupta; Sankar Lithium-Manganese oxide electrode for a rechargeable lithium battery
US5758575A (en) 1995-06-07 1998-06-02 Bemis Company Inc. Apparatus for printing an electrical circuit component with print cells in liquid communication
US6265652B1 (en) 1995-06-15 2001-07-24 Kanegafuchi Kagaku Kogyo Kabushiki Kabushiki Kaisha Integrated thin-film solar battery and method of manufacturing the same
KR100342189B1 (ko) 1995-07-12 2002-11-30 삼성전자 주식회사 휘발성복합체를사용한희토류원소첨가광섬유제조방법
US6639578B1 (en) 1995-07-20 2003-10-28 E Ink Corporation Flexible displays
US6459418B1 (en) 1995-07-20 2002-10-01 E Ink Corporation Displays combining active and non-active inks
US6118426A (en) 1995-07-20 2000-09-12 E Ink Corporation Transducers and indicators having printed displays
US5677784A (en) 1995-07-24 1997-10-14 Ellis D. Harris Sr. Family Trust Array of pellicle optical gates
JPH0949077A (ja) * 1995-08-09 1997-02-18 Ulvac Japan Ltd Ｄｃスパッタリング装置
EP0761838B1 (de) 1995-08-18 2001-08-08 W.C. Heraeus GmbH & Co. KG Target für die Kathodenzerstäubung und Verfahren zur Herstellung eines solchen Targets
US5563979A (en) 1995-08-31 1996-10-08 Lucent Technologies Inc. Erbium-doped planar optical device
US5582935A (en) 1995-09-28 1996-12-10 Dasgupta; Sankar Composite electrode for a lithium battery
US5689522A (en) 1995-10-02 1997-11-18 The Regents Of The University Of California High efficiency 2 micrometer laser utilizing wing-pumped Tm3+ and a laser diode array end-pumping architecture
US5716736A (en) 1995-10-06 1998-02-10 Midwest Research Institute Solid lithium-ion electrolyte
US5616933A (en) 1995-10-16 1997-04-01 Sony Corporation Nitride encapsulated thin film transistor fabrication technique
US5719976A (en) 1995-10-24 1998-02-17 Lucent Technologies, Inc. Optimized waveguide structure
JP3298799B2 (ja) 1995-11-22 2002-07-08 ルーセント テクノロジーズ インコーポレイテッド クラッディングポンプファイバとその製造方法
US5811177A (en) 1995-11-30 1998-09-22 Motorola, Inc. Passivation of electroluminescent organic devices
US5686360A (en) 1995-11-30 1997-11-11 Motorola Passivation of organic devices
US6608464B1 (en) 1995-12-11 2003-08-19 The Johns Hopkins University Integrated power source layered with thin film rechargeable batteries, charger, and charge-control
US5644207A (en) 1995-12-11 1997-07-01 The Johns Hopkins University Integrated power source
US5897522A (en) 1995-12-20 1999-04-27 Power Paper Ltd. Flexible thin layer open electrochemical cell and applications of same
US5955161A (en) 1996-01-30 1999-09-21 Becton Dickinson And Company Blood collection tube assembly
US5637418A (en) 1996-02-08 1997-06-10 Motorola, Inc. Package for a flat electrochemical device
US5721067A (en) 1996-02-22 1998-02-24 Jacobs; James K. Rechargeable lithium battery having improved reversible capacity
US5972516A (en) 1996-02-29 1999-10-26 Kyocera Corporation Method for manufacturing optical waveguide using siloxane polymer, and optoelectronic hybrid substrate using the optical waveguide
US5845990A (en) 1996-03-11 1998-12-08 Hilite Systems, L.L.C. High signal lights for automotive vehicles
JP2810013B2 (ja) * 1996-03-14 1998-10-15 株式会社東芝 酸化物薄膜の形成方法および酸化物薄膜
WO1997035044A1 (en) 1996-03-22 1997-09-25 Materials Research Corporation Method and apparatus for rf diode sputtering
US5930584A (en) 1996-04-10 1999-07-27 United Microelectronics Corp. Process for fabricating low leakage current electrode for LPCVD titanium oxide films
JPH1010675A (ja) 1996-04-22 1998-01-16 Fuji Photo Film Co Ltd 記録材料
JP3346167B2 (ja) 1996-05-27 2002-11-18 三菱マテリアル株式会社 高強度誘電体スパッタリングターゲットおよびその製造方法並びに膜
JP3862760B2 (ja) 1996-06-12 2006-12-27 トレスパファン、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツング 低い薄膜干渉を示す透明なバリヤコーティング
EP0814529A1 (fr) 1996-06-19 1997-12-29 Koninklijke Philips Electronics N.V. Carte mince comprenant un accumulateur plat et des contacts
US5948464A (en) 1996-06-19 1999-09-07 Imra America, Inc. Process of manufacturing porous separator for electrochemical power supply
US5761234A (en) 1996-07-09 1998-06-02 Sdl, Inc. High power, reliable optical fiber pumping system with high redundancy for use in lightwave communication systems
US5731661A (en) 1996-07-15 1998-03-24 Motorola, Inc. Passivation of electroluminescent organic devices
US5855744A (en) 1996-07-19 1999-01-05 Applied Komatsu Technology, Inc. Non-planar magnet tracking during magnetron sputtering
US5693956A (en) 1996-07-29 1997-12-02 Motorola Inverted oleds on hard plastic substrate
JPH1056145A (ja) 1996-08-07 1998-02-24 Hitachi Ltd 半導体集積回路装置の製造方法
JP3825843B2 (ja) 1996-09-12 2006-09-27 キヤノン株式会社 太陽電池モジュール
KR20000049093A (ko) 1996-10-11 2000-07-25 자르밀라 제트. 흐르벡 배터리용 중합체 전해질, 인터칼레이션 화합물 및 전극
US6007945A (en) 1996-10-15 1999-12-28 Electrofuel Inc. Negative electrode for a rechargeable lithium battery comprising a solid solution of titanium dioxide and tin dioxide
JP3631341B2 (ja) 1996-10-18 2005-03-23 Ｔｄｋ株式会社 積層型複合機能素子およびその製造方法
US5841931A (en) 1996-11-26 1998-11-24 Massachusetts Institute Of Technology Methods of forming polycrystalline semiconductor waveguides for optoelectronic integrated circuits, and devices formed thereby
US5783333A (en) 1996-11-27 1998-07-21 Polystor Corporation Lithium nickel cobalt oxides for positive electrodes
DE69735551T2 (de) 1996-12-11 2006-12-21 Tonen Chemical Corp. Dünner, aprotischer Elektrolytfilm, immobilisierter Flüssigfilmleiter und Polymerzelle
US6144795A (en) 1996-12-13 2000-11-07 Corning Incorporated Hybrid organic-inorganic planar optical waveguide device
US6289209B1 (en) 1996-12-18 2001-09-11 Micron Technology, Inc. Wireless communication system, radio frequency communications system, wireless communications method, radio frequency communications method
US5842118A (en) 1996-12-18 1998-11-24 Micron Communications, Inc. Communication system including diversity antenna queuing
JPH10195649A (ja) 1996-12-27 1998-07-28 Sony Corp マグネトロンスパッタ装置および半導体装置の製造方法
US5705293A (en) 1997-01-09 1998-01-06 Lockheed Martin Energy Research Corporation Solid state thin film battery having a high temperature lithium alloy anode
US5882812A (en) 1997-01-14 1999-03-16 Polyplus Battery Company, Inc. Overcharge protection systems for rechargeable batteries
US5790489A (en) 1997-01-21 1998-08-04 Dell Usa, L.P. Smart compact disk including a processor and a transmission element
US5944964A (en) 1997-02-13 1999-08-31 Optical Coating Laboratory, Inc. Methods and apparatus for preparing low net stress multilayer thin film coatings
JPH10229201A (ja) 1997-02-14 1998-08-25 Sony Corp 薄膜半導体装置の製造方法
JP3345878B2 (ja) 1997-02-17 2002-11-18 株式会社デンソー 電子回路装置の製造方法
US5847865A (en) 1997-02-18 1998-12-08 Regents Of The University Of Minnesota Waveguide optical amplifier
US5970393A (en) 1997-02-25 1999-10-19 Polytechnic University Integrated micro-strip antenna apparatus and a system utilizing the same for wireless communications for sensing and actuation purposes
JP3767151B2 (ja) 1997-02-26 2006-04-19 ソニー株式会社 薄型電池
JPH10302843A (ja) 1997-02-28 1998-11-13 Mitsubishi Electric Corp 電池用接着剤及びそれを用いた電池とその製造法
JP3098204B2 (ja) 1997-03-07 2000-10-16 ティーディーケイ株式会社 光磁気記録用合金ターゲット、その製造方法およびその再生方法
US5952778A (en) 1997-03-18 1999-09-14 International Business Machines Corporation Encapsulated organic light emitting device
JPH10265948A (ja) 1997-03-25 1998-10-06 Rohm Co Ltd 半導体装置用基板およびその製法
DE69704074T2 (de) 1997-03-27 2001-06-21 Tno Erbiumdotierter planarer Wellenleiter
US6106933A (en) 1997-04-03 2000-08-22 Toray Industries, Inc. Transparent gas barrier biaxially oriented polypropylene film, a laminate film, and a production method thereof
US6242132B1 (en) 1997-04-16 2001-06-05 Ut-Battelle, Llc Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery
US5948215A (en) 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
US6030421A (en) 1997-04-23 2000-02-29 Hydro-Quebec Ultra thin solid state lithium batteries and process of preparing same
US6422698B2 (en) 1997-04-28 2002-07-23 Binney & Smith Inc. Ink jet marker
US6394598B1 (en) 1997-04-28 2002-05-28 Binney & Smith Inc. Ink jet marker
US6329213B1 (en) 1997-05-01 2001-12-11 Micron Technology, Inc. Methods for forming integrated circuits within substrates
US5882721A (en) 1997-05-01 1999-03-16 Imra America Inc Process of manufacturing porous separator for electrochemical power supply
JP3290375B2 (ja) 1997-05-12 2002-06-10 松下電器産業株式会社 有機電界発光素子
JP3045998B2 (ja) 1997-05-15 2000-05-29 エフエムシー・コーポレイション 層間化合物およびその作製方法
US5895731A (en) 1997-05-15 1999-04-20 Nelson E. Smith Thin-film lithium battery and process
US5830330A (en) 1997-05-22 1998-11-03 Tokyo Electron Limited Method and apparatus for low pressure sputtering
US6000603A (en) 1997-05-23 1999-12-14 3M Innovative Properties Company Patterned array of metal balls and methods of making
US5977582A (en) 1997-05-23 1999-11-02 Lucent Technologies Inc. Capacitor comprising improved TaOx -based dielectric
US6316563B2 (en) 1997-05-27 2001-11-13 Showa Denko K.K. Thermopolymerizable composition and use thereof
US6077106A (en) 1997-06-05 2000-06-20 Micron Communications, Inc. Thin profile battery mounting contact for printed circuit boards
US5865860A (en) 1997-06-20 1999-02-02 Imra America, Inc. Process for filling electrochemical cells with electrolyte
KR19990007150A (ko) 1997-06-20 1999-01-25 이데이 노부유끼 전지
US6051114A (en) 1997-06-23 2000-04-18 Applied Materials, Inc. Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition
US5831262A (en) 1997-06-27 1998-11-03 Lucent Technologies Inc. Article comprising an optical fiber attached to a micromechanical device
JP3813740B2 (ja) 1997-07-11 2006-08-23 Ｔｄｋ株式会社 電子デバイス用基板
US5982144A (en) 1997-07-14 1999-11-09 Johnson Research & Development Company, Inc. Rechargeable battery power supply overcharge protection circuit
JP3335884B2 (ja) 1997-07-16 2002-10-21 株式会社荏原製作所 腐食・防食解析方法
US5973913A (en) 1997-08-12 1999-10-26 Covalent Associates, Inc. Nonaqueous electrical storage device
US6252564B1 (en) 1997-08-28 2001-06-26 E Ink Corporation Tiled displays
KR100250855B1 (ko) 1997-08-28 2000-04-01 손욱 하이브리드 폴리머 전해질, 그 제조 방법 및 이를 사용하여제조한 리튬 전지
JPH11111273A (ja) 1997-09-29 1999-04-23 Furukawa Battery Co Ltd:The リチウム二次電池用極板の製造法及びリチウム二次電池
US5916704A (en) 1997-10-10 1999-06-29 Ultralife Batteries Low pressure battery vent
EP1027723B1 (en) 1997-10-14 2009-06-17 Patterning Technologies Limited Method of forming an electric capacitor
US6094292A (en) 1997-10-15 2000-07-25 Trustees Of Tufts College Electrochromic window with high reflectivity modulation
US6982132B1 (en) 1997-10-15 2006-01-03 Trustees Of Tufts College Rechargeable thin film battery and method for making the same
US6084285A (en) 1997-10-20 2000-07-04 The Board Of Trustees Of The Leland Stanford Junior University Lateral flux capacitor having fractal-shaped perimeters
EP1023692B1 (en) 1997-10-22 2002-08-28 Cambridge Consultants Limited Portable ic card
US5948562A (en) 1997-11-03 1999-09-07 Motorola, Inc. Energy storage device
US6041734A (en) 1997-12-01 2000-03-28 Applied Materials, Inc. Use of an asymmetric waveform to control ion bombardment during substrate processing
US6052397A (en) 1997-12-05 2000-04-18 Sdl, Inc. Laser diode device having a substantially circular light output beam and a method of forming a tapered section in a semiconductor device to provide for a reproducible mode profile of the output beam
US6120890A (en) 1997-12-12 2000-09-19 Seagate Technology, Inc. Magnetic thin film medium comprising amorphous sealing layer for reduced lithium migration
US5976327A (en) 1997-12-12 1999-11-02 Applied Materials, Inc. Step coverage and overhang improvement by pedestal bias voltage modulation
US6042965A (en) 1997-12-12 2000-03-28 Johnson Research & Development Company, Inc. Unitary separator and electrode structure and method of manufacturing separator
US6045942A (en) 1997-12-15 2000-04-04 Avery Dennison Corporation Low profile battery and method of making same
US6019284A (en) 1998-01-27 2000-02-01 Viztec Inc. Flexible chip card with display
US6137671A (en) 1998-01-29 2000-10-24 Energenius, Inc. Embedded energy storage device
KR100474746B1 (ko) 1998-02-12 2005-03-08 에이씨엠 리서치, 인코포레이티드 도금 장치 및 방법
US6402795B1 (en) 1998-02-18 2002-06-11 Polyplus Battery Company, Inc. Plating metal negative electrodes under protective coatings
US6753108B1 (en) 1998-02-24 2004-06-22 Superior Micropowders, Llc Energy devices and methods for the fabrication of energy devices
US6223317B1 (en) 1998-02-28 2001-04-24 Micron Technology, Inc. Bit synchronizers and methods of synchronizing and calculating error
US6080508A (en) 1998-03-06 2000-06-27 Electrofuel Inc. Packaging assembly for a lithium battery
US6610440B1 (en) 1998-03-10 2003-08-26 Bipolar Technologies, Inc Microscopic batteries for MEMS systems
US6004660A (en) 1998-03-12 1999-12-21 E.I. Du Pont De Nemours And Company Oxygen barrier composite film structure
US5889383A (en) 1998-04-03 1999-03-30 Advanced Micro Devices, Inc. System and method for charging batteries with ambient acoustic energy
GB9808061D0 (en) 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
US6563998B1 (en) 1999-04-15 2003-05-13 John Farah Polished polymide substrate
US6753114B2 (en) 1998-04-20 2004-06-22 Electrovaya Inc. Composite electrolyte for a rechargeable lithium battery
US6175075B1 (en) 1998-04-21 2001-01-16 Canon Kabushiki Kaisha Solar cell module excelling in reliability
US6169474B1 (en) 1998-04-23 2001-01-02 Micron Technology, Inc. Method of communications in a backscatter system, interrogator, and backscatter communications system
US6324211B1 (en) 1998-04-24 2001-11-27 Micron Technology, Inc. Interrogators communication systems communication methods and methods of processing a communication signal
US6459726B1 (en) 1998-04-24 2002-10-01 Micron Technology, Inc. Backscatter interrogators, communication systems and backscatter communication methods
US6905578B1 (en) 1998-04-27 2005-06-14 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure
US6214061B1 (en) 1998-05-01 2001-04-10 Polyplus Battery Company, Inc. Method for forming encapsulated lithium electrodes having glass protective layers
US6420961B1 (en) 1998-05-14 2002-07-16 Micron Technology, Inc. Wireless communication systems, interfacing devices, communication methods, methods of interfacing with an interrogator, and methods of operating an interrogator
US6075973A (en) 1998-05-18 2000-06-13 Micron Technology, Inc. Method of communications in a backscatter system, interrogator, and backscatter communications system
US6115616A (en) 1998-05-28 2000-09-05 International Business Machines Corporation Hand held telephone set with separable keyboard
JP3126698B2 (ja) 1998-06-02 2001-01-22 富士通株式会社 スパッタ成膜方法、スパッタ成膜装置及び半導体装置の製造方法
US6093944A (en) 1998-06-04 2000-07-25 Lucent Technologies Inc. Dielectric materials of amorphous compositions of TI-O2 doped with rare earth elements and devices employing same
US7854684B1 (en) 1998-06-24 2010-12-21 Samsung Electronics Co., Ltd. Wearable device
KR100287176B1 (ko) 1998-06-25 2001-04-16 윤종용 고온산화를이용한반도체소자의커패시터형성방법
US6058233A (en) 1998-06-30 2000-05-02 Lucent Technologies Inc. Waveguide array with improved efficiency for wavelength routers and star couplers in integrated optics
GB9814123D0 (en) 1998-07-01 1998-08-26 British Gas Plc Electrochemical fuel cell
EP0969521A1 (de) 1998-07-03 2000-01-05 ISOVOLTAÖsterreichische IsolierstoffwerkeAktiengesellschaft Fotovoltaischer Modul sowie ein Verfahren zu dessen Herstellung
DE19831719A1 (de) 1998-07-15 2000-01-20 Alcatel Sa Verfahren zur Herstellung planarer Wellenleiterstrukturen sowie Wellenleiterstruktur
US6358810B1 (en) 1998-07-28 2002-03-19 Applied Materials, Inc. Method for superior step coverage and interface control for high K dielectric capacitors and related electrodes
US6146225A (en) 1998-07-30 2000-11-14 Agilent Technologies, Inc. Transparent, flexible permeability barrier for organic electroluminescent devices
US6579728B2 (en) 1998-08-03 2003-06-17 Privicom, Inc. Fabrication of a high resolution, low profile credit card reader and card reader for transmission of data by sound
US6129277A (en) 1998-08-03 2000-10-10 Privicon, Inc. Card reader for transmission of data by sound
US6160373A (en) 1998-08-10 2000-12-12 Dunn; James P. Battery operated cableless external starting device and methods
JP2000067852A (ja) 1998-08-21 2000-03-03 Pioneer Electronic Corp リチウム二次電池
KR100305903B1 (ko) 1998-08-21 2001-12-17 박호군 수직으로통합연결된박막형전지를구비하는전기및전자소자와그제작방법
JP3386756B2 (ja) 1998-08-31 2003-03-17 松下電池工業株式会社 薄膜形成方法および薄膜形成装置
US6210832B1 (en) 1998-09-01 2001-04-03 Polyplus Battery Company, Inc. Mixed ionic electronic conductor coatings for redox electrodes
US6192222B1 (en) 1998-09-03 2001-02-20 Micron Technology, Inc. Backscatter communication systems, interrogators, methods of communicating in a backscatter system, and backscatter communication methods
JP4014737B2 (ja) 1998-09-17 2007-11-28 昭和電工株式会社 熱重合性組成物及びその用途
US6236793B1 (en) 1998-09-23 2001-05-22 Molecular Optoelectronics Corporation Optical channel waveguide amplifier
US6362916B2 (en) 1998-09-25 2002-03-26 Fiver Laboratories All fiber gain flattening optical filter
US6159635A (en) 1998-09-29 2000-12-12 Electrofuel Inc. Composite electrode including current collector
KR100283954B1 (ko) 1998-10-13 2001-03-02 윤종용 광증폭기용 광섬유
US7323634B2 (en) 1998-10-14 2008-01-29 Patterning Technologies Limited Method of forming an electronic device
KR100282487B1 (ko) 1998-10-19 2001-02-15 윤종용 고유전 다층막을 이용한 셀 캐패시터 및 그 제조 방법
US6605228B1 (en) 1998-10-19 2003-08-12 Nhk Spring Co., Ltd. Method for fabricating planar optical waveguide devices
JP4126711B2 (ja) 1998-10-23 2008-07-30 ソニー株式会社 非水電解質電池
JP3830008B2 (ja) 1998-10-30 2006-10-04 ソニー株式会社 非水電解質電池
US6157765A (en) 1998-11-03 2000-12-05 Lucent Technologies Planar waveguide optical amplifier
KR100280705B1 (ko) 1998-11-05 2001-03-02 김순택 리튬 이온 폴리머 전지용 전극 활물질 조성물 및 이를 이용한리튬 이온 폴리머 전지용 전극판의 제조방법
US6797429B1 (en) 1998-11-06 2004-09-28 Japan Storage Battery Co, Ltd. Non-aqueous electrolytic secondary cell
ATE333207T1 (de) 1998-11-09 2006-08-15 Ballard Power Systems Elektrische kontaktvorrichtung für eine brennstoffzelle
US6117279A (en) 1998-11-12 2000-09-12 Tokyo Electron Limited Method and apparatus for increasing the metal ion fraction in ionized physical vapor deposition
US6384573B1 (en) 1998-11-12 2002-05-07 James Dunn Compact lightweight auxiliary multifunctional reserve battery engine starting system (and methods)
WO2000033409A1 (fr) 1998-12-03 2000-06-08 Sumitomo Electric Industries, Ltd. Accumulateur au lithium
EP1145338B1 (en) 1998-12-16 2012-12-05 Samsung Display Co., Ltd. Environmental barrier material for organic light emitting device and method of making
US6268695B1 (en) 1998-12-16 2001-07-31 Battelle Memorial Institute Environmental barrier material for organic light emitting device and method of making
JP2000188099A (ja) 1998-12-22 2000-07-04 Mitsubishi Chemicals Corp 薄膜型電池の製造方法
AU2961600A (en) 1999-01-08 2000-07-24 Massachusetts Institute Of Technology Electroactive material for secondary batteries and methods of preparation
GB9900396D0 (en) 1999-01-08 1999-02-24 Danionics As Arrangements of electrochemical cells
JP4074418B2 (ja) 1999-01-11 2008-04-09 三菱化学株式会社 薄膜型リチウム二次電池
US6379835B1 (en) * 1999-01-12 2002-04-30 Morgan Adhesives Company Method of making a thin film battery
US6290822B1 (en) 1999-01-26 2001-09-18 Agere Systems Guardian Corp. Sputtering method for forming dielectric films
US6302939B1 (en) 1999-02-01 2001-10-16 Magnequench International, Inc. Rare earth permanent magnet and method for making same
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
AU768057B2 (en) 1999-02-25 2003-11-27 Kaneka Corporation Integrated thin-film solar battery
US6210544B1 (en) 1999-03-08 2001-04-03 Alps Electric Co., Ltd. Magnetic film forming method
US6603391B1 (en) 1999-03-09 2003-08-05 Micron Technology, Inc. Phase shifters, interrogators, methods of shifting a phase angle of a signal, and methods of operating an interrogator
US6356764B1 (en) 1999-03-09 2002-03-12 Micron Technology, Inc. Wireless communication systems, interrogators and methods of communicating within a wireless communication system
US6277520B1 (en) 1999-03-19 2001-08-21 Ntk Powerdex, Inc. Thin lithium battery with slurry cathode
US6280875B1 (en) 1999-03-24 2001-08-28 Teledyne Technologies Incorporated Rechargeable battery structure with metal substrate
ES2198833T3 (es) 1999-03-25 2004-02-01 Kaneka Corporation Procedimiento de fabricacion de modulos de celulas solares de capa fina.
US6160215A (en) 1999-03-26 2000-12-12 Curtin; Lawrence F. Method of making photovoltaic device
US6148503A (en) 1999-03-31 2000-11-21 Imra America, Inc. Process of manufacturing porous separator for electrochemical power supply
US6168884B1 (en) 1999-04-02 2001-01-02 Lockheed Martin Energy Research Corporation Battery with an in-situ activation plated lithium anode
US6242129B1 (en) 1999-04-02 2001-06-05 Excellatron Solid State, Llc Thin lithium film battery
US6398824B1 (en) 1999-04-02 2002-06-04 Excellatron Solid State, Llc Method for manufacturing a thin-film lithium battery by direct deposition of battery components on opposite sides of a current collector
WO2000062365A1 (en) 1999-04-14 2000-10-19 Power Paper Ltd. Functionally improved battery and method of making same
US6855441B1 (en) 1999-04-14 2005-02-15 Power Paper Ltd. Functionally improved battery and method of making same
US6416598B1 (en) 1999-04-20 2002-07-09 Reynolds Metals Company Free machining aluminum alloy with high melting point machining constituent and method of use
KR100296741B1 (ko) 1999-05-11 2001-07-12 박호군 트렌치 구조를 갖는 전지 및 그 제조방법
US6281142B1 (en) 1999-06-04 2001-08-28 Micron Technology, Inc. Dielectric cure for reducing oxygen vacancies
JP3736205B2 (ja) 1999-06-04 2006-01-18 三菱電機株式会社 バッテリ蓄電装置
US6046081A (en) 1999-06-10 2000-04-04 United Microelectronics Corp. Method for forming dielectric layer of capacitor
US6133670A (en) 1999-06-24 2000-10-17 Sandia Corporation Compact electrostatic comb actuator
US6296741B1 (en) 1999-06-25 2001-10-02 International Business Machines Corporation Method of making oxide barrier layer for a spin tunnel junction
US6413676B1 (en) 1999-06-28 2002-07-02 Lithium Power Technologies, Inc. Lithium ion polymer electrolytes
JP2001021744A (ja) 1999-07-07 2001-01-26 Shin Etsu Chem Co Ltd 光導波路基板の製造方法
JP2001020065A (ja) 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料
JP2001025666A (ja) 1999-07-14 2001-01-30 Nippon Sheet Glass Co Ltd 積層体およびその製造方法
US6290821B1 (en) 1999-07-15 2001-09-18 Seagate Technology Llc Sputter deposition utilizing pulsed cathode and substrate bias power
KR100456647B1 (ko) 1999-08-05 2004-11-10 에스케이씨 주식회사 리튬 이온 폴리머 전지
US6344795B1 (en) 1999-08-17 2002-02-05 Lucent Technologies Inc. Method and apparatus for generating temperature based alerting signals
US6249222B1 (en) 1999-08-17 2001-06-19 Lucent Technologies Inc. Method and apparatus for generating color based alerting signals
US6356230B1 (en) 1999-08-20 2002-03-12 Micron Technology, Inc. Interrogators, wireless communication systems, methods of operating an interrogator, methods of monitoring movement of a radio frequency identification device, methods of monitoring movement of a remote communication device and movement monitoring methods
US6414626B1 (en) 1999-08-20 2002-07-02 Micron Technology, Inc. Interrogators, wireless communication systems, methods of operating an interrogator, methods of operating a wireless communication system, and methods of determining range of a remote communication device
US6537428B1 (en) 1999-09-02 2003-03-25 Veeco Instruments, Inc. Stable high rate reactive sputtering
US6664006B1 (en) 1999-09-02 2003-12-16 Lithium Power Technologies, Inc. All-solid-state electrochemical device and method of manufacturing
US6645675B1 (en) 1999-09-02 2003-11-11 Lithium Power Technologies, Inc. Solid polymer electrolytes
US6392565B1 (en) 1999-09-10 2002-05-21 Eworldtrack, Inc. Automobile tracking and anti-theft system
US6528212B1 (en) 1999-09-13 2003-03-04 Sanyo Electric Co., Ltd. Lithium battery
US6344366B1 (en) 1999-09-15 2002-02-05 Lockheed Martin Energy Research Corporation Fabrication of highly textured lithium cobalt oxide films by rapid thermal annealing
US6296949B1 (en) 1999-09-16 2001-10-02 Ga-Tek Inc. Copper coated polyimide with metallic protective layer
JP4240679B2 (ja) 1999-09-21 2009-03-18 ソニー株式会社 スパッタリング用ターゲットの製造方法
US6296967B1 (en) 1999-09-24 2001-10-02 Electrofuel Inc. Lithium battery structure incorporating lithium pouch cells
TW457767B (en) 1999-09-27 2001-10-01 Matsushita Electric Works Ltd Photo response semiconductor switch having short circuit load protection
US6368275B1 (en) 1999-10-07 2002-04-09 Acuson Corporation Method and apparatus for diagnostic medical information gathering, hyperthermia treatment, or directed gene therapy
DE19948839A1 (de) 1999-10-11 2001-04-12 Bps Alzenau Gmbh Leitende transparente Schichten und Verfahren zu ihrer Herstellung
US6500287B1 (en) 1999-10-14 2002-12-31 Forskarpatent I Uppsala Ab Color-modifying treatment of thin films
US6413645B1 (en) 2000-04-20 2002-07-02 Battelle Memorial Institute Ultrabarrier substrates
US6866901B2 (en) 1999-10-25 2005-03-15 Vitex Systems, Inc. Method for edge sealing barrier films
US6548912B1 (en) 1999-10-25 2003-04-15 Battelle Memorial Institute Semicoductor passivation using barrier coatings
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US6573652B1 (en) 1999-10-25 2003-06-03 Battelle Memorial Institute Encapsulated display devices
US7198832B2 (en) 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US20070196682A1 (en) 1999-10-25 2007-08-23 Visser Robert J Three dimensional multilayer barrier and method of making
US6413284B1 (en) 1999-11-01 2002-07-02 Polyplus Battery Company Encapsulated lithium alloy electrodes having barrier layers
US6413285B1 (en) 1999-11-01 2002-07-02 Polyplus Battery Company Layered arrangements of lithium electrodes
US6271793B1 (en) 1999-11-05 2001-08-07 International Business Machines Corporation Radio frequency (RF) transponder (Tag) with composite antenna
EP1183750A2 (en) 1999-11-11 2002-03-06 Koninklijke Philips Electronics N.V. Lithium battery comprising a gel-eletrolyte
US6293688B1 (en) 1999-11-12 2001-09-25 Sparkolor Corporation Tapered optical waveguide coupler
JP3999424B2 (ja) 1999-11-16 2007-10-31 ローム株式会社 端子基板、端子基板を備えた電池パック、および端子基板の製造方法
US7247408B2 (en) 1999-11-23 2007-07-24 Sion Power Corporation Lithium anodes for electrochemical cells
US6797428B1 (en) 1999-11-23 2004-09-28 Moltech Corporation Lithium anodes for electrochemical cells
US6733924B1 (en) 1999-11-23 2004-05-11 Moltech Corporation Lithium anodes for electrochemical cells
US6582481B1 (en) 1999-11-23 2003-06-24 Johnson Research & Development Company, Inc. Method of producing lithium base cathodes
US6511516B1 (en) 2000-02-23 2003-01-28 Johnson Research & Development Co., Inc. Method and apparatus for producing lithium based cathodes
US6210545B1 (en) 1999-11-23 2001-04-03 International Business Machines Corporation Method for forming a perovskite thin film using a sputtering method with a fully oxidized perovskite target
US6350353B2 (en) 1999-11-24 2002-02-26 Applied Materials, Inc. Alternate steps of IMP and sputtering process to improve sidewall coverage
US6294288B1 (en) 1999-12-01 2001-09-25 Valence Technology, Inc. Battery cell having notched layers
CA2389347A1 (en) 1999-12-02 2001-06-07 Tony C. Kowalczyk Photodefinition of optical devices
US6344419B1 (en) 1999-12-03 2002-02-05 Applied Materials, Inc. Pulsed-mode RF bias for sidewall coverage improvement
JP2001176464A (ja) 1999-12-17 2001-06-29 Sumitomo Electric Ind Ltd 非水電解質電池
DE19961579A1 (de) * 1999-12-21 2001-06-28 Mann & Hummel Filter Flüssigkeitsfilter mit einem Kühler
US6426163B1 (en) 1999-12-21 2002-07-30 Alcatel Electrochemical cell
US6576546B2 (en) 1999-12-22 2003-06-10 Texas Instruments Incorporated Method of enhancing adhesion of a conductive barrier layer to an underlying conductive plug and contact for ferroelectric applications
US6534809B2 (en) 1999-12-22 2003-03-18 Agilent Technologies, Inc. Hardmask designs for dry etching FeRAM capacitor stacks
US6451177B1 (en) 2000-01-21 2002-09-17 Applied Materials, Inc. Vault shaped target and magnetron operable in two sputtering modes
CN1307376A (zh) 2000-01-27 2001-08-08 钟馨稼 一种可反复充放电的铬氟锂固体动力电池
US6372383B1 (en) 2000-01-31 2002-04-16 Korea Advanced Institute Of Science And Technology Method for preparing electrodes for Ni/Metal hydride secondary cells using Cu
US6271094B1 (en) 2000-02-14 2001-08-07 International Business Machines Corporation Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance
US6627056B2 (en) 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
TW523615B (en) 2000-02-17 2003-03-11 L3 Optics Inc Guided wave optical switch based on an active semiconductor amplifier and a passive optical component
JP2003523589A (ja) 2000-02-18 2003-08-05 サイパック アクチボラゲット 識別および認証のための方法およびデバイス
EP1259992B1 (en) 2000-02-23 2011-10-05 SRI International Biologically powered electroactive polymer generators
TW584905B (en) 2000-02-25 2004-04-21 Tokyo Electron Ltd Method and apparatus for depositing films
US6410471B2 (en) 2000-03-07 2002-06-25 Shin-Etsu Chemical Co., Ltd. Method for preparation of sintered body of rare earth oxide
DE50114283D1 (de) 2000-03-09 2008-10-16 Isovolta Verfahren zum herstellen eines photovoltaischen dünnfilm-moduls
JP2001259494A (ja) 2000-03-17 2001-09-25 Matsushita Battery Industrial Co Ltd 薄膜形成方法
EP1328982B1 (en) 2000-03-24 2005-07-20 Cymbet Corporation Device enclosures and devices with integrated battery
US6387563B1 (en) 2000-03-28 2002-05-14 Johnson Research & Development, Inc. Method of producing a thin film battery having a protective packaging
JP4106644B2 (ja) 2000-04-04 2008-06-25 ソニー株式会社 電池およびその製造方法
US6423106B1 (en) 2000-04-05 2002-07-23 Johnson Research & Development Method of producing a thin film battery anode
US6709778B2 (en) 2000-04-10 2004-03-23 Johnson Electro Mechanical Systems, Llc Electrochemical conversion system
GB2361244B (en) 2000-04-14 2004-02-11 Trikon Holdings Ltd A method of depositing dielectric
US6365319B1 (en) 2000-04-20 2002-04-02 Eastman Kodak Company Self-contained imaging media comprising opaque laminated support
US20010052752A1 (en) 2000-04-25 2001-12-20 Ghosh Amalkumar P. Thin film encapsulation of organic light emitting diode devices
KR100341407B1 (ko) 2000-05-01 2002-06-22 윤덕용 플라즈마 처리에 의한 리튬전이금속 산화물 박막의 결정화방법
US6433465B1 (en) 2000-05-02 2002-08-13 The United States Of America As Represented By The Secretary Of The Navy Energy-harvesting device using electrostrictive polymers
US6423776B1 (en) 2000-05-02 2002-07-23 Honeywell International Inc. Oxygen scavenging high barrier polyamide compositions for packaging applications
US6261917B1 (en) 2000-05-09 2001-07-17 Chartered Semiconductor Manufacturing Ltd. High-K MOM capacitor
US6760520B1 (en) 2000-05-09 2004-07-06 Teralux Corporation System and method for passively aligning and coupling optical devices
DE10023459A1 (de) 2000-05-12 2001-11-15 Balzers Process Systems Gmbh Indium-Zinn-Oxid (ITO)-Schicht und Verfahren zur Herstellung derselben
US6384473B1 (en) 2000-05-16 2002-05-07 Sandia Corporation Microelectronic device package with an integral window
JP4432206B2 (ja) 2000-05-18 2010-03-17 株式会社ブリヂストン 積層膜の形成方法
US6436156B1 (en) 2000-05-25 2002-08-20 The Gillette Company Zinc/air cell
EP1160900A3 (en) 2000-05-26 2007-12-12 Kabushiki Kaisha Riken Embossed current collector separator for electrochemical fuel cell
US6284406B1 (en) 2000-06-09 2001-09-04 Ntk Powerdex, Inc. IC card with thin battery
US6524750B1 (en) 2000-06-17 2003-02-25 Eveready Battery Company, Inc. Doped titanium oxide additives
US6432577B1 (en) 2000-06-29 2002-08-13 Sandia Corporation Apparatus and method for fabricating a microbattery
JP2002026173A (ja) 2000-07-10 2002-01-25 Fuji Photo Film Co Ltd Ｉｃ装置、基板、およびｉｃ組付基板
US20040247921A1 (en) 2000-07-18 2004-12-09 Dodsworth Robert S. Etched dielectric film in hard disk drives
US6524466B1 (en) 2000-07-18 2003-02-25 Applied Semiconductor, Inc. Method and system of preventing fouling and corrosion of biomedical devices and structures
JP3608507B2 (ja) 2000-07-19 2005-01-12 住友電気工業株式会社 アルカリ金属薄膜部材の製造方法
KR100336407B1 (ko) 2000-07-19 2002-05-10 박호군 박막 전지를 위한 전해질용 리튬인산염 스퍼터링 타겟제조방법
US6506289B2 (en) 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
US6402796B1 (en) 2000-08-07 2002-06-11 Excellatron Solid State, Llc Method of producing a thin film battery
US6538211B2 (en) 2000-08-15 2003-03-25 World Properties, Inc. Multi-layer circuits and methods of manufacture thereof
US6572173B2 (en) 2000-08-28 2003-06-03 Mueller Hermann-Frank Sun shield for vehicles
KR100387121B1 (ko) 2000-08-31 2003-06-12 주식회사 애니셀 수직 방향으로 집적된 다층 박막전지 및 그의 제조방법
US6866963B2 (en) 2000-09-04 2005-03-15 Samsung Sdi Co., Ltd. Cathode active material and lithium battery employing the same
US7056620B2 (en) 2000-09-07 2006-06-06 Front Edge Technology, Inc. Thin film battery and method of manufacture
US6632563B1 (en) 2000-09-07 2003-10-14 Front Edge Technology, Inc. Thin film battery and method of manufacture
EP1364424A2 (de) 2000-09-14 2003-11-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Elektrochemisch aktivierbare schicht oder folie
US6628876B1 (en) 2000-09-15 2003-09-30 Triquint Technology Holding Co. Method for making a planar waveguide
TW448318B (en) 2000-09-18 2001-08-01 Nat Science Council Erbium, Yttrium co-doped Titanium oxide thin film material for planar optical waveguide amplifier
DE10165080B4 (de) 2000-09-20 2015-05-13 Hitachi Metals, Ltd. Siliciumnitrid-Pulver und -Sinterkörper sowie Verfahren zu deren Herstellung und Leiterplatte damit
US6372098B1 (en) 2000-09-28 2002-04-16 The Boc Group, Inc. High target utilization magnet array and associated methods
US6637916B2 (en) 2000-10-05 2003-10-28 Muellner Hermann-Frank Lamp for vehicles
US6660660B2 (en) 2000-10-10 2003-12-09 Asm International, Nv. Methods for making a dielectric stack in an integrated circuit
JP4532713B2 (ja) 2000-10-11 2010-08-25 東洋鋼鈑株式会社 多層金属積層フィルム及びその製造方法
KR100389655B1 (ko) 2000-10-14 2003-06-27 삼성에스디아이 주식회사 우수한 사이클링 안정성과 높은 이온 전도도를 갖는리튬-이온 이차 박막 전지
US6622049B2 (en) 2000-10-16 2003-09-16 Remon Medical Technologies Ltd. Miniature implantable illuminator for photodynamic therapy
US20030044118A1 (en) 2000-10-20 2003-03-06 Phosistor Technologies, Inc. Integrated planar composite coupling structures for bi-directional light beam transformation between a small mode size waveguide and a large mode size waveguide
US6488822B1 (en) 2000-10-20 2002-12-03 Veecoleve, Inc. Segmented-target ionized physical-vapor deposition apparatus and method of operation
US6525976B1 (en) 2000-10-24 2003-02-25 Excellatron Solid State, Llc Systems and methods for reducing noise in mixed-mode integrated circuits
US6863699B1 (en) 2000-11-03 2005-03-08 Front Edge Technology, Inc. Sputter deposition of lithium phosphorous oxynitride material
US6413382B1 (en) 2000-11-03 2002-07-02 Applied Materials, Inc. Pulsed sputtering with a small rotating magnetron
JP3812324B2 (ja) 2000-11-06 2006-08-23 日本電気株式会社 リチウム二次電池とその製造方法
US6494999B1 (en) 2000-11-09 2002-12-17 Honeywell International Inc. Magnetron sputtering apparatus with an integral cooling and pressure relieving cathode
DE60129196T2 (de) 2000-11-18 2007-10-11 Samsung SDI Co., Ltd., Suwon Dünnschicht Anode für Lithium enthaltende Sekundärbatterie
KR100389908B1 (ko) 2000-11-18 2003-07-04 삼성에스디아이 주식회사 리튬 2차 전지용 음극 박막
US20020106297A1 (en) 2000-12-01 2002-08-08 Hitachi Metals, Ltd. Co-base target and method of producing the same
NL1016779C2 (nl) 2000-12-02 2002-06-04 Cornelis Johannes Maria V Rijn Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs.
JP4461656B2 (ja) 2000-12-07 2010-05-12 セイコーエプソン株式会社 光電変換素子
US20020091929A1 (en) 2000-12-19 2002-07-11 Jakob Ehrensvard Secure digital signing of data
US6444336B1 (en) 2000-12-21 2002-09-03 The Regents Of The University Of California Thin film dielectric composite materials
DE60132809T2 (de) 2000-12-21 2009-02-05 Sion Power Corp., Tucson Lithium anoden für elektrochemische zellen
JP2002203562A (ja) * 2000-12-28 2002-07-19 Toshiba Corp 非水電解質二次電池
US6620545B2 (en) 2001-01-05 2003-09-16 Visteon Global Technologies, Inc. ETM based battery
US6312274B1 (en) 2001-01-12 2001-11-06 Advanced Connectek Inc. Electrical connector
US6650000B2 (en) 2001-01-16 2003-11-18 International Business Machines Corporation Apparatus and method for forming a battery in an integrated circuit
US6533907B2 (en) 2001-01-19 2003-03-18 Symmorphix, Inc. Method of producing amorphous silicon for hard mask and waveguide applications
US6673716B1 (en) 2001-01-30 2004-01-06 Novellus Systems, Inc. Control of the deposition temperature to reduce the via and contact resistance of Ti and TiN deposited using ionized PVD techniques
US6558836B1 (en) 2001-02-08 2003-05-06 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Structure of thin-film lithium microbatteries
US6589299B2 (en) 2001-02-13 2003-07-08 3M Innovative Properties Company Method for making electrode
US20020139662A1 (en) 2001-02-21 2002-10-03 Lee Brent W. Thin-film deposition of low conductivity targets using cathodic ARC plasma process
US20020164441A1 (en) 2001-03-01 2002-11-07 The University Of Chicago Packaging for primary and secondary batteries
JP2002258037A (ja) 2001-03-05 2002-09-11 Alps Electric Co Ltd 積層膜を有する光フィルタおよびその製造方法
US6751241B2 (en) 2001-09-27 2004-06-15 Corning Incorporated Multimode fiber laser gratings
US7048400B2 (en) 2001-03-22 2006-05-23 Lumimove, Inc. Integrated illumination system
US7164206B2 (en) 2001-03-28 2007-01-16 Intel Corporation Structure in a microelectronic device including a bi-layer for a diffusion barrier and an etch-stop layer
US6797137B2 (en) 2001-04-11 2004-09-28 Heraeus, Inc. Mechanically alloyed precious metal magnetic sputtering targets fabricated using rapidly solidfied alloy powders and elemental Pt metal
US7033406B2 (en) 2001-04-12 2006-04-25 Eestor, Inc. Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries
US7914755B2 (en) 2001-04-12 2011-03-29 Eestor, Inc. Method of preparing ceramic powders using chelate precursors
US7595109B2 (en) 2001-04-12 2009-09-29 Eestor, Inc. Electrical-energy-storage unit (EESU) utilizing ceramic and integrated-circuit technologies for replacement of electrochemical batteries
US6677070B2 (en) 2001-04-19 2004-01-13 Hewlett-Packard Development Company, L.P. Hybrid thin film/thick film solid oxide fuel cell and method of manufacturing the same
US6782290B2 (en) 2001-04-27 2004-08-24 Medtronic, Inc. Implantable medical device with rechargeable thin-film microbattery power source
US7744735B2 (en) 2001-05-04 2010-06-29 Tokyo Electron Limited Ionized PVD with sequential deposition and etching
US6743488B2 (en) 2001-05-09 2004-06-01 Cpfilms Inc. Transparent conductive stratiform coating of indium tin oxide
JP2002344115A (ja) 2001-05-16 2002-11-29 Matsushita Electric Ind Co Ltd 成膜方法及びプリント基板の製造方法
US6650942B2 (en) 2001-05-30 2003-11-18 Medtronic, Inc. Implantable medical device with dual cell power source
US6517968B2 (en) 2001-06-11 2003-02-11 Excellatron Solid State, Llc Thin lithium film battery
US6752842B2 (en) 2001-06-18 2004-06-22 Power Paper Ltd. Manufacture of flexible thin layer electrochemical cell
JP3737389B2 (ja) 2001-06-19 2006-01-18 京セラ株式会社 バッテリー
JP3929839B2 (ja) 2001-06-28 2007-06-13 松下電器産業株式会社 電池及び電池パック
US6768855B1 (en) 2001-07-05 2004-07-27 Sandia Corporation Vertically-tapered optical waveguide and optical spot transformer formed therefrom
US6549688B2 (en) 2001-07-06 2003-04-15 Redfern Integrated Optics Pty Ltd Monolithically-integrated optical device and method of forming same
US7469558B2 (en) 2001-07-10 2008-12-30 Springworks, Llc As-deposited planar optical waveguides with low scattering loss and methods for their manufacture
US20030029715A1 (en) 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US6758404B2 (en) 2001-08-03 2004-07-06 General Instrument Corporation Media cipher smart card
US7022431B2 (en) 2001-08-20 2006-04-04 Power Paper Ltd. Thin layer electrochemical cell with self-formed separator
US6500676B1 (en) 2001-08-20 2002-12-31 Honeywell International Inc. Methods and apparatus for depositing magnetic films
US7335441B2 (en) 2001-08-20 2008-02-26 Power Paper Ltd. Thin layer electrochemical cell with self-formed separator
KR100382767B1 (ko) 2001-08-25 2003-05-09 삼성에스디아이 주식회사 리튬 2차 전지용 음극 박막 및 그의 제조방법
JP4108602B2 (ja) 2001-08-28 2008-06-25 Ｔｄｋ株式会社 薄膜容量素子用組成物、高誘電率絶縁膜、薄膜容量素子および薄膜積層コンデンサ
JP4775923B2 (ja) 2001-08-30 2011-09-21 キヤノン株式会社 弗化物の薄膜作成方法
EP1359636A1 (en) 2001-09-03 2003-11-05 Matsushita Electric Industrial Co., Ltd. Method for manufacturing electrochemical device
US7118825B2 (en) 2001-09-05 2006-10-10 Omnitek Partners Llc Conformal power supplies
US6637906B2 (en) 2001-09-11 2003-10-28 Recot, Inc. Electroluminescent flexible film for product packaging
WO2003022564A1 (en) 2001-09-12 2003-03-20 Itn Energy Systems, Inc. Apparatus and method for the design and manufacture of multifunctional composite materials with power integration
TW560102B (en) 2001-09-12 2003-11-01 Itn Energy Systems Inc Thin-film electrochemical devices on fibrous or ribbon-like substrates and methd for their manufacture and design
US6838209B2 (en) 2001-09-21 2005-01-04 Eveready Battery Company, Inc. Flexible thin battery and method of manufacturing same
US7115516B2 (en) 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
JP2003124491A (ja) 2001-10-15 2003-04-25 Sharp Corp 薄膜太陽電池モジュール
JP4015835B2 (ja) 2001-10-17 2007-11-28 松下電器産業株式会社 半導体記憶装置
US6666982B2 (en) 2001-10-22 2003-12-23 Tokyo Electron Limited Protection of dielectric window in inductively coupled plasma generation
FR2831318B1 (fr) 2001-10-22 2006-06-09 Commissariat Energie Atomique Dispositif de stockage d'energie a recharge rapide, sous forme de films minces
US6750156B2 (en) 2001-10-24 2004-06-15 Applied Materials, Inc. Method and apparatus for forming an anti-reflective coating on a substrate
KR100424637B1 (ko) 2001-10-25 2004-03-24 삼성에스디아이 주식회사 리튬 이차 전지용 박막 전극 및 그 제조방법
JP3971911B2 (ja) * 2001-10-29 2007-09-05 松下電器産業株式会社 固体リチウム二次電池およびその製造方法
US7404877B2 (en) 2001-11-09 2008-07-29 Springworks, Llc Low temperature zirconia based thermal barrier layer by PVD
US6805999B2 (en) 2001-11-13 2004-10-19 Midwest Research Institute Buried anode lithium thin film battery and process for forming the same
KR100425585B1 (ko) 2001-11-22 2004-04-06 한국전자통신연구원 가교 고분자 보호박막을 갖춘 리튬 고분자 이차 전지 및그 제조 방법
US20030097858A1 (en) 2001-11-26 2003-05-29 Christof Strohhofer Silver sensitized erbium ion doped planar waveguide amplifier
US6830846B2 (en) 2001-11-29 2004-12-14 3M Innovative Properties Company Discontinuous cathode sheet halfcell web
US20030109903A1 (en) 2001-12-12 2003-06-12 Epic Biosonics Inc. Low profile subcutaneous enclosure
US6683749B2 (en) 2001-12-19 2004-01-27 Storage Technology Corporation Magnetic transducer having inverted write element with zero delta in pole tip width
US6737789B2 (en) 2002-01-18 2004-05-18 Leon J. Radziemski Force activated, piezoelectric, electricity generation, storage, conditioning and supply apparatus and methods
US20040081415A1 (en) 2002-01-22 2004-04-29 Demaray Richard E. Planar optical waveguide amplifier with mode size converter
US20030143853A1 (en) 2002-01-31 2003-07-31 Celii Francis G. FeRAM capacitor stack etch
JP3979859B2 (ja) 2002-02-07 2007-09-19 三洋電機株式会社 リチウム二次電池用電極の製造方法
US20030152829A1 (en) 2002-02-12 2003-08-14 Ji-Guang Zhang Thin lithium film battery
JP3565207B2 (ja) 2002-02-27 2004-09-15 日産自動車株式会社 電池パック
US6713987B2 (en) 2002-02-28 2004-03-30 Front Edge Technology, Inc. Rechargeable battery having permeable anode current collector
US7081693B2 (en) 2002-03-07 2006-07-25 Microstrain, Inc. Energy harvesting for wireless sensor operation and data transmission
US7378356B2 (en) 2002-03-16 2008-05-27 Springworks, Llc Biased pulse DC reactive sputtering of oxide films
US6884327B2 (en) 2002-03-16 2005-04-26 Tao Pan Mode size converter for a planar waveguide
US20030174391A1 (en) 2002-03-16 2003-09-18 Tao Pan Gain flattened optical amplifier
US20030175142A1 (en) 2002-03-16 2003-09-18 Vassiliki Milonopoulou Rare-earth pre-alloyed PVD targets for dielectric planar applications
US6885028B2 (en) 2002-03-25 2005-04-26 Sharp Kabushiki Kaisha Transistor array and active-matrix substrate
TWI283031B (en) 2002-03-25 2007-06-21 Epistar Corp Method for integrating compound semiconductor with substrate of high thermal conductivity
US6792026B2 (en) 2002-03-26 2004-09-14 Joseph Reid Henrichs Folded cavity solid-state laser
JP2003282142A (ja) 2002-03-26 2003-10-03 Matsushita Electric Ind Co Ltd 薄膜積層体、薄膜電池、コンデンサ、及び薄膜積層体の製造方法と製造装置
KR100454092B1 (ko) 2002-04-29 2004-10-26 광주과학기술원 급속 열처리법을 이용한 박막전지용 양극박막의 제조방법
DE10318187B4 (de) 2002-05-02 2010-03-18 Osram Opto Semiconductors Gmbh Verkapselungsverfahren für organische Leuchtdiodenbauelemente
US6949389B2 (en) 2002-05-02 2005-09-27 Osram Opto Semiconductors Gmbh Encapsulation for organic light emitting diodes devices
US6588836B1 (en) * 2002-05-16 2003-07-08 Albert Chong-Jen Lo Chaise longue
JP4043296B2 (ja) 2002-06-13 2008-02-06 松下電器産業株式会社 全固体電池
US6700491B2 (en) 2002-06-14 2004-03-02 Sensormatic Electronics Corporation Radio frequency identification tag with thin-film battery for antenna
US7083270B2 (en) 2002-06-20 2006-08-01 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, ink jet head, angular velocity sensor, method for manufacturing the same, and ink jet recording apparatus
US6780208B2 (en) 2002-06-28 2004-08-24 Hewlett-Packard Development Company, L.P. Method of making printed battery structures
US7410730B2 (en) 2002-07-09 2008-08-12 Oak Ridge Micro-Energy, Inc. Thin film battery and electrolyte therefor
US6818356B1 (en) 2002-07-09 2004-11-16 Oak Ridge Micro-Energy, Inc. Thin film battery and electrolyte therefor
US7362659B2 (en) 2002-07-11 2008-04-22 Action Manufacturing Company Low current microcontroller circuit
US6835493B2 (en) 2002-07-26 2004-12-28 Excellatron Solid State, Llc Thin film battery
US6770176B2 (en) 2002-08-02 2004-08-03 Itn Energy Systems. Inc. Apparatus and method for fracture absorption layer
JP2004071305A (ja) 2002-08-05 2004-03-04 Hitachi Maxell Ltd 非水電解質二次電池
JP3729164B2 (ja) 2002-08-05 2005-12-21 日産自動車株式会社 自動車用電池
US8021778B2 (en) 2002-08-09 2011-09-20 Infinite Power Solutions, Inc. Electrochemical apparatus with barrier layer protected substrate
US8236443B2 (en) 2002-08-09 2012-08-07 Infinite Power Solutions, Inc. Metal film encapsulation
US8394522B2 (en) 2002-08-09 2013-03-12 Infinite Power Solutions, Inc. Robust metal film encapsulation
US20070264564A1 (en) 2006-03-16 2007-11-15 Infinite Power Solutions, Inc. Thin film battery on an integrated circuit or circuit board and method thereof
US6916679B2 (en) 2002-08-09 2005-07-12 Infinite Power Solutions, Inc. Methods of and device for encapsulation and termination of electronic devices
US8445130B2 (en) 2002-08-09 2013-05-21 Infinite Power Solutions, Inc. Hybrid thin-film battery
US8431264B2 (en) 2002-08-09 2013-04-30 Infinite Power Solutions, Inc. Hybrid thin-film battery
US20080003496A1 (en) 2002-08-09 2008-01-03 Neudecker Bernd J Electrochemical apparatus with barrier layer protected substrate
KR20040017478A (ko) 2002-08-21 2004-02-27 한국과학기술원 인쇄회로기판의 제조방법 및 다층 인쇄회로기판
TWI274199B (en) 2002-08-27 2007-02-21 Symmorphix Inc Optically coupling into highly uniform waveguides
US20040048157A1 (en) 2002-09-11 2004-03-11 Neudecker Bernd J. Lithium vanadium oxide thin-film battery
US6994933B1 (en) 2002-09-16 2006-02-07 Oak Ridge Micro-Energy, Inc. Long life thin film battery and method therefor
US20040081860A1 (en) 2002-10-29 2004-04-29 Stmicroelectronics, Inc. Thin-film battery equipment
JP2004149849A (ja) 2002-10-30 2004-05-27 Hitachi Chem Co Ltd 金属薄膜の形成方法及び電極付基板
US20040085002A1 (en) 2002-11-05 2004-05-06 Pearce Michael Baker Method and apparatus for an incidental use piezoelectric energy source with thin-film battery
JP2004158268A (ja) 2002-11-06 2004-06-03 Sony Corp 成膜装置
AU2002340506A1 (en) 2002-11-07 2004-06-07 Fractus, S.A. Integrated circuit package including miniature antenna
KR100682883B1 (ko) 2002-11-27 2007-02-15 삼성전자주식회사 고체 전해질, 그의 제조방법 및 이를 채용한 리튬전지 및 박막전지
JP4777593B2 (ja) 2002-11-29 2011-09-21 株式会社オハラ リチウムイオン二次電池の製造方法
EP1431422B1 (de) 2002-12-16 2006-12-13 Basf Aktiengesellschaft Verfahren zur Gewinnung von Lithium
JP4072049B2 (ja) 2002-12-25 2008-04-02 京セラ株式会社 燃料電池セル及び燃料電池
TWI261045B (en) 2002-12-30 2006-09-01 Ind Tech Res Inst Composite nanofibers and their fabrications
US6906436B2 (en) 2003-01-02 2005-06-14 Cymbet Corporation Solid state activity-activated battery device and method
US7067197B2 (en) 2003-01-07 2006-06-27 Cabot Corporation Powder metallurgy sputtering targets and methods of producing same
IL153895A (en) 2003-01-12 2013-01-31 Orion Solar Systems Ltd Solar cell device
KR100513726B1 (ko) 2003-01-30 2005-09-08 삼성전자주식회사 고체 전해질, 이를 채용한 전지 및 그 고체 전해질의 제조방법
DE10304824A1 (de) 2003-01-31 2004-08-12 Varta Microbattery Gmbh Dünne elektronische Chipkarte
RU2241281C2 (ru) 2003-02-10 2004-11-27 Институт химии и химической технологии СО РАН Способ получения тонких пленок кобальтата лития
JP2004273436A (ja) 2003-02-18 2004-09-30 Matsushita Electric Ind Co Ltd 全固体薄膜積層電池
CN1756856B (zh) 2003-02-27 2011-10-12 希莫菲克斯公司 电介质阻挡层膜
US6936407B2 (en) 2003-02-28 2005-08-30 Osram Opto Semiconductors Gmbh Thin-film electronic device module
KR100590376B1 (ko) 2003-03-20 2006-06-19 마쯔시다덴기산교 가부시키가이샤 집합전지
CN1274052C (zh) 2003-03-21 2006-09-06 比亚迪股份有限公司 锂离子二次电池的制造方法
US6845198B2 (en) 2003-03-25 2005-01-18 Sioptical, Inc. High-speed silicon-based electro-optic modulator
US6955986B2 (en) 2003-03-27 2005-10-18 Asm International N.V. Atomic layer deposition methods for forming a multi-layer adhesion-barrier layer for integrated circuits
US20070141468A1 (en) 2003-04-03 2007-06-21 Jeremy Barker Electrodes Comprising Mixed Active Particles
EP1632999B1 (en) 2003-04-04 2011-03-30 Panasonic Corporation Battery mounted integrated circuit device
US20040258984A1 (en) 2003-04-14 2004-12-23 Massachusetts Institute Of Technology Integrated thin film batteries on silicon integrated circuits
KR100508945B1 (ko) 2003-04-17 2005-08-17 삼성에스디아이 주식회사 리튬 전지용 음극, 그의 제조 방법 및 그를 포함하는 리튬전지
US7045246B2 (en) 2003-04-22 2006-05-16 The Aerospace Corporation Integrated thin film battery and circuit module
US7088031B2 (en) 2003-04-22 2006-08-08 Infinite Power Solutions, Inc. Method and apparatus for an ambient energy battery or capacitor recharge system
JP2004335192A (ja) * 2003-05-02 2004-11-25 Sony Corp 正極の製造方法および電池の製造方法
US6936377B2 (en) 2003-05-13 2005-08-30 C. Glen Wensley Card with embedded IC and electrochemical cell
US8728285B2 (en) 2003-05-23 2014-05-20 Demaray, Llc Transparent conductive oxides
US7238628B2 (en) 2003-05-23 2007-07-03 Symmorphix, Inc. Energy conversion and storage films and devices by physical vapor deposition of titanium and titanium oxides and sub-oxides
US6852139B2 (en) 2003-07-11 2005-02-08 Excellatron Solid State, Llc System and method of producing thin-film electrolyte
US6886240B2 (en) 2003-07-11 2005-05-03 Excellatron Solid State, Llc Apparatus for producing thin-film electrolyte
JP4351213B2 (ja) 2003-09-03 2009-10-28 日鉱金属株式会社 スパッタリング用ターゲット及びその製造方法
US20050070097A1 (en) 2003-09-29 2005-03-31 International Business Machines Corporation Atomic laminates for diffusion barrier applications
US7230321B2 (en) 2003-10-13 2007-06-12 Mccain Joseph Integrated circuit package with laminated power cell having coplanar electrode
US20050079418A1 (en) 2003-10-14 2005-04-14 3M Innovative Properties Company In-line deposition processes for thin film battery fabrication
US7211351B2 (en) 2003-10-16 2007-05-01 Cymbet Corporation Lithium/air batteries with LiPON as separator and protective barrier and method
FR2861218B1 (fr) 2003-10-16 2007-04-20 Commissariat Energie Atomique Couche et procede de protection de microbatteries par une bicouche ceramique-metal
US20050105853A1 (en) 2003-11-13 2005-05-19 Ansheng Liu Method and apparatus for dual tapering an optical waveguide
US20050133361A1 (en) 2003-12-12 2005-06-23 Applied Materials, Inc. Compensation of spacing between magnetron and sputter target
EP1544917A1 (en) 2003-12-15 2005-06-22 Dialog Semiconductor GmbH Integrated battery pack with lead frame connection
JP2005196971A (ja) 2003-12-26 2005-07-21 Matsushita Electric Ind Co Ltd リチウム二次電池用負極とその製造方法ならびにリチウム二次電池
KR20070024473A (ko) 2004-01-06 2007-03-02 사임베트 코퍼레이션 층상 배리어구조와 그 형성방법
TWI302760B (en) 2004-01-15 2008-11-01 Lg Chemical Ltd Electrochemical device comprising aliphatic nitrile compound
JP3859645B2 (ja) 2004-01-16 2006-12-20 Ｎｅｃラミリオンエナジー株式会社 フィルム外装電気デバイス
US7968233B2 (en) 2004-02-18 2011-06-28 Solicore, Inc. Lithium inks and electrodes and batteries made therefrom
US7624499B2 (en) 2004-02-26 2009-12-01 Hei, Inc. Flexible circuit having an integrally formed battery
DE102004010892B3 (de) 2004-03-06 2005-11-24 Christian-Albrechts-Universität Zu Kiel Chemisch stabiler fester Lithiumionenleiter
JP4418262B2 (ja) 2004-03-12 2010-02-17 三井造船株式会社 基板・マスク固定装置
US7340124B2 (en) 2004-04-07 2008-03-04 Avago Technologies Fiber Ip Pte Ltd Optical switch using rare earth doped glass
US7052741B2 (en) 2004-05-18 2006-05-30 The United States Of America As Represented By The Secretary Of The Navy Method of fabricating a fibrous structure for use in electrochemical applications
EP1779478A2 (en) 2004-06-24 2007-05-02 Koheras A/S A system comprising a low phase noise waveguide laser, a method of its manufacturing and its use
US7195950B2 (en) 2004-07-21 2007-03-27 Hewlett-Packard Development Company, L.P. Forming a plurality of thin-film devices
US7645246B2 (en) 2004-08-11 2010-01-12 Omnitek Partners Llc Method for generating power across a joint of the body during a locomotion cycle
JP4892180B2 (ja) 2004-08-20 2012-03-07 セイコーインスツル株式会社 電気化学セル、その製造方法およびその外観検査方法
US7959769B2 (en) 2004-12-08 2011-06-14 Infinite Power Solutions, Inc. Deposition of LiCoO2
US8636876B2 (en) 2004-12-08 2014-01-28 R. Ernest Demaray Deposition of LiCoO2
CN101073171B (zh) 2004-12-08 2010-09-22 希莫菲克斯公司 LiCoO2的沉积
US7670724B1 (en) 2005-01-05 2010-03-02 The United States Of America As Represented By The Secretary Of The Army Alkali-hydroxide modified poly-vinylidene fluoride/polyethylene oxide lithium-air battery
US20060155545A1 (en) 2005-01-11 2006-07-13 Hosanna, Inc. Multi-source powered audio playback system
KR101101001B1 (ko) 2005-01-19 2011-12-29 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 술폰계 전해질을 갖는 전류 생성 장치
DE102005014427B4 (de) 2005-03-24 2008-05-15 Infineon Technologies Ag Verfahren zum Verkapseln eines Halbleiterbauelements
EP1713024A1 (en) 2005-04-14 2006-10-18 Ngk Spark Plug Co., Ltd. A card, a method of manufacturing the card, and a thin type battery for the card
US20060237543A1 (en) 2005-04-20 2006-10-26 Ngk Spark Plug Co., Ltd. Card, manufacturing method of card, and thin type battery for card
US8182661B2 (en) 2005-07-27 2012-05-22 Applied Materials, Inc. Controllable target cooling
US7400253B2 (en) 2005-08-04 2008-07-15 Mhcmos, Llc Harvesting ambient radio frequency electromagnetic energy for powering wireless electronic devices, sensors and sensor networks and applications thereof
CN101313426B (zh) 2005-08-09 2012-12-12 波利普拉斯电池有限公司 用于被保护的活性金属阳极的适应性密封结构
US7838133B2 (en) 2005-09-02 2010-11-23 Springworks, Llc Deposition of perovskite and other compound ceramic films for dielectric applications
US7202825B2 (en) 2005-09-15 2007-04-10 Motorola, Inc. Wireless communication device with integrated battery/antenna system
US7345647B1 (en) 2005-10-05 2008-03-18 Sandia Corporation Antenna structure with distributed strip
DE102006009789B3 (de) 2006-03-01 2007-10-04 Infineon Technologies Ag Verfahren zur Herstellung eines Halbleiterbauteils aus einer Verbundplatte mit Halbleiterchips und Kunststoffgehäusemasse
US8155712B2 (en) 2006-03-23 2012-04-10 Sibeam, Inc. Low power very high-data rate device
DE102006025671B4 (de) 2006-06-01 2011-12-15 Infineon Technologies Ag Verfahren zur Herstellung von dünnen integrierten Halbleitereinrichtungen
JP4058456B2 (ja) 2006-10-23 2008-03-12 富士通株式会社 情報処理装置用機能拡張装置
DE102006054309A1 (de) 2006-11-17 2008-05-21 Dieter Teckhaus Batteriezelle mit Kontaktelementenanordnung
JP4466668B2 (ja) 2007-03-20 2010-05-26 セイコーエプソン株式会社 半導体装置の製造方法
US7915089B2 (en) 2007-04-10 2011-03-29 Infineon Technologies Ag Encapsulation method
DE102007030604A1 (de) 2007-07-02 2009-01-08 Weppner, Werner, Prof. Dr. Ionenleiter mit Granatstruktur
JP5705549B2 (ja) 2008-01-11 2015-04-22 インフィニット パワー ソリューションズ， インコーポレイテッド 薄膜電池および他のデバイスのための薄膜カプセル化
EP2319101B1 (en) 2008-08-11 2015-11-04 Sapurast Research LLC Energy device with integral collector surface for electromagnetic energy harvesting and method thereof
US8389160B2 (en) 2008-10-07 2013-03-05 Envia Systems, Inc. Positive electrode materials for lithium ion batteries having a high specific discharge capacity and processes for the synthesis of these materials

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103066239A (zh) * 2011-10-21 2013-04-24 捷讯研究有限公司 用于较高能量密度和较薄电池的凹入接头
US9142840B2 (en) 2011-10-21 2015-09-22 Blackberry Limited Method of reducing tabbing volume required for external connections
CN103066239B (zh) * 2011-10-21 2015-11-11 黑莓有限公司 用于较高能量密度和较薄电池的凹入接头
US10446828B2 (en) 2011-10-21 2019-10-15 Blackberry Limited Recessed tab for higher energy density and thinner batteries
CN106252589A (zh) * 2015-06-12 2016-12-21 联想(北京)有限公司 一种柔性电池及柔性电池组
CN108232320A (zh) * 2018-02-08 2018-06-29 天津瑞晟晖能科技有限公司 全固态薄膜锂离子电池的制备方法及全固态薄膜锂离子电池
CN111176046A (zh) * 2018-11-12 2020-05-19 中国科学院上海硅酸盐研究所 一种钴酸锂薄膜及其制备方法和应用
CN111176046B (zh) * 2018-11-12 2021-04-16 中国科学院上海硅酸盐研究所 一种钴酸锂薄膜及其制备方法和应用

Also Published As

Publication number Publication date
TWI331634B (en) 2010-10-11
WO2006063308A2 (en) 2006-06-15
KR101127370B1 (ko) 2012-03-29
EP1825545A4 (en) 2008-03-26
TW200808990A (en) 2008-02-16
WO2006063308A3 (en) 2006-11-30
KR20070086668A (ko) 2007-08-27
JP5095412B2 (ja) 2012-12-12
TWI346403B (en) 2011-08-01
KR20070102761A (ko) 2007-10-19
US20140102878A1 (en) 2014-04-17
DE602005017512D1 (de) 2009-12-17
ATE447777T1 (de) 2009-11-15
US20060134522A1 (en) 2006-06-22
CN101931097B (zh) 2012-11-21
US20180331349A1 (en) 2018-11-15
JP2008523567A (ja) 2008-07-03
KR101021536B1 (ko) 2011-03-16
US9887414B2 (en) 2018-02-06
EP1825545B1 (en) 2009-11-04
TW200635113A (en) 2006-10-01
EP1825545A2 (en) 2007-08-29
US8636876B2 (en) 2014-01-28

Similar Documents

Publication Publication Date Title
CN101931097B (zh) LiCoO2的沉积
US7959769B2 (en) Deposition of LiCoO2
CN101073171B (zh) LiCoO2的沉积
JP5129530B2 (ja) ＬｉＣｏＯ２の堆積
KR101010716B1 (ko) 비전도성 타겟을 사용하는 스퍼터링에 의한 세라믹 박막의증착 방법 및 그를 위한 장치
CN101511493B (zh) 用于介电应用的钙钛矿和其它化合物陶瓷膜的沉积
Yoon et al. Lattice orientation control of lithium cobalt oxide cathode film for all-solid-state thin film batteries
EP2421082A1 (en) Method for manufacturing solid electrolytic cell, and solid electrolytic cell
CN105900212A (zh) 电化学器件中电极层上的固态电解质的沉积
Hayashi et al. Preparation of positive LiCoO2 films by electron cyclotron resonance (ECR) plasma sputtering method and its application to all-solid-state thin-film lithium batteries
Lee et al. Effect of silver co-sputtering on amorphous V2O5 thin-films for microbatteries
EP1900845B1 (en) Deposition of LiCoO2
Na et al. A solid-state thin-film electrolyte, lithium silicon oxynitride, deposited by using rf sputtering for thin-film batteries
Bae et al. Post-annealing of thin-film yttria stabilized zirconia electrolytes for anode-supported low-temperature solid oxide fuel cells
US20220407043A1 (en) Method of manufacturing crystalline material from different materials
WO2021094768A1 (en) Method of depositing a material
Cho et al. Thin Film Lithium Electrolytes
CN114196929A (zh) 一种锂离子电池集电极膜的加工方法
Ziebert et al. Magnetron sputtered thin film solid state electrolytes in the materials system Li-V-Si-O with increased ionic conductivity
Asano et al. Electrochemical Analysis of Nanoscaled Ba0. 5Sr0. 5Co0. 8Fe0. 2O3-δ Thin-Film Cathodes

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121121

Termination date: 20181207