CN101966687B - Chemical mechanical lapping method - Google Patents
Chemical mechanical lapping method Download PDFInfo
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- CN101966687B CN101966687B CN2009100554321A CN200910055432A CN101966687B CN 101966687 B CN101966687 B CN 101966687B CN 2009100554321 A CN2009100554321 A CN 2009100554321A CN 200910055432 A CN200910055432 A CN 200910055432A CN 101966687 B CN101966687 B CN 101966687B
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Abstract
The invention discloses a chemical mechanical lapping method which comprises the following steps: when carrying out lapping on metals, detecting a theoretic lapping end point in real time, and when the theoretic lapping end point is detected, lapping the surplus metals outside a blocking layer, an oxidation layer and a groove; and continuing to carry out lapping on the oxidation layer, wherein the lapping time of the oxidation layer is a preset fixed value. By using the method, the stability of devices can be improved.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly a kind of chemical and mechanical grinding method.
Background technology
At present, along with the extensive use of electronic equipment, semi-conductive manufacturing process has obtained development at full speed, in semi-conductive manufacturing process, relates to chemical mechanical milling tech (CMP).CMP realizes through three grinder stations that mainly each grinder station is carried out a grinding step respectively, is that example describes respectively these three grinding steps with the grinding to tungsten below.
Fig. 1 is the generalized section of first operation of chemical and mechanical grinding method in the prior art.Go up execution first operation at first grinder station (Platen 1), as shown in Figure 1, adopt bigger material removing rate (MMR) that tungsten is ground; Remove the tungsten of the overwhelming majority; The time of implementation of first operation is set to a fixed value in advance, and for different metallic, the time of implementation of first operation is set to the different fixed value usually; When tungsten was ground, the time of implementation of first operation generally was set to 25-55 second.In the ideal case, after first operation was finished according to the fixed value that is provided with in advance, the upper surface of tungsten was that grinding endpoint should a little higher than theoretical grinding endpoint, that is to say, when grinding endpoint during near theoretical grinding endpoint, first operation finishes.
Fig. 2 is the generalized section of second operation of chemical and mechanical grinding method in the prior art.Second operation is carried out in (Platen 2) on second grinder station, and is as shown in Figure 2, the theoretical grinding endpoint of real-time detection; After detecting theoretical grinding endpoint; Adopt less MRR to remove the outer remaining tungsten of groove, reach the purpose of isolation in order to ensure the outer remaining tungsten of groove all is removed, behind the tungsten outside removing groove; Also to carry out the grinding of certain hour; To remove groove outer barrier layer and a spot of oxide layer, for the metal of same type, the time of implementation of first operation is set to identical value; And because the MRR of metal thickness, metal hardness and first grinder station of each wafer possibly there are differences, the height of the grinding endpoint after first grinding step finishes is uncertain.So the time of implementation of second operation is uncertain, cause wafer loss in order to prevent overmastication, generally can set a maximum.When tungsten was ground, the time of implementation of second operation was generally 30-80 second, and maximum generally can be set at 90 seconds.
Specifically; The method of the theoretical grinding endpoint of real-time detection is: laser generator and transducer are installed below the polishing pad of grinder station, and laser generator gives off laser beam in real time, and laser beam is invested wafer; Simultaneously; Sensor in real time receives the reflection intensity data from wafer, and according to the different reflected intensitys of the metal pair laser of different-thickness, confirms theoretical grinding endpoint through analyzing reflection intensity data.
Fig. 3 is the generalized section of the 3rd operation of chemical and mechanical grinding method in the prior art.The 3rd operation is carried out in (Platen 3) on the 3rd grinder station; As shown in Figure 3; Remove certain oxide layer, with further raising flattening surface degree, the time of implementation of the 3rd operation is set to a fixed value in advance; When tungsten was ground, the time of implementation of the 3rd operation generally was set to 5-30 second.
In the ideal case, when first operation finishes, the lucky a little higher than theoretical grinding endpoint of grinding endpoint; That is to say, in the ideal case, after second operation begins from the position of a little higher than grinding endpoint to carry out; Necessarily can detect theoretical grinding endpoint, yet, in practical application; Because technologic error, being difficult to make the metal layer thickness that is deposited on each wafer all is ideal thickness, and metal hardness etc. also have certain difference; And the MRR of grinder station also has certain difference, when the metal level that is deposited is thin, hardness is less or MRR when big, because the time of implementation of first operation is set to a fixed value; Then when first operation finishes, upper surface that might metal level has been lower than theoretical grinding endpoint, in this case; When carrying out second operation, can't detect theoretical grinding endpoint, in practical application; When in second operation, surveying less than theoretical grinding endpoint, second operation is carried out according to the maximum that is provided with in advance, so when first operation and second operation are finished; The over-lapping of metal in whole oxide layer and the groove, whole thickness of oxide layer is littler than the thickness of oxide layer under the ideal situation, and the metal that is filled in the groove also lacks than the metal under the ideal situation; Thereby cause metallic resistance littler, reduced the stability of device than the metallic resistance under the ideal situation.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of chemical and mechanical grinding method, to improve the stability of device.
For achieving the above object, technical scheme of the present invention specifically is achieved in that
A kind of chemical and mechanical grinding method, this method comprises: when metal was ground, the theoretical grinding endpoint of real-time detection when detecting theoretical grinding endpoint, ground the outer remaining metal of barrier layer, oxide layer and groove; Oxide layer is proceeded to grind, and the fixed value of milling time for being provided with in advance that oxide layer is ground.
When said metal was tungsten, the said milling time scope that the outer remaining metal of barrier layer, oxide layer and groove is ground was 30-80 second.
The said milling time scope that oxide layer is proceeded to grind is 5-30 second.
Visible by above-mentioned technical scheme; When metal was ground, the theoretical grinding endpoint of real-time detection was when detecting theoretical grinding endpoint; Begin the outer remaining metal of barrier layer, oxide layer and groove is ground; Then oxide layer is proceeded to grind, and milling time be the fixed value of setting in advance, so just can guarantee when the grinding to metal arrives theoretical grinding endpoint, just to begin remaining metal outside barrier layer, oxide layer and the groove is ground; Avoid the metal over-lapping in whole oxide layer and the groove, thereby improve the stability of device.
Description of drawings
Fig. 1 is the generalized section of first operation of chemical and mechanical grinding method in the prior art.
Fig. 2 is the generalized section of second operation of chemical and mechanical grinding method in the prior art.
Fig. 3 is the generalized section of the 3rd operation of chemical and mechanical grinding method in the prior art.
Fig. 4 is the flow chart of the embodiment of a kind of chemical and mechanical grinding method provided by the present invention.
Embodiment
For make the object of the invention, technical scheme, and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, to further explain of the present invention.
Core concept of the present invention is: when carrying out first operation; The theoretical grinding endpoint of real-time detection; When detecting theoretical grinding endpoint, finish first operation and carry out second operation, this just can guarantee when metal level is milled to the position of approaching theoretical grinding endpoint, to carry out immediately second operation; After first operation and the end of second operation, can avoid the metal over-lapping in whole oxide layer and the groove.
Fig. 4 is the flow chart of the embodiment of a kind of chemical and mechanical grinding method provided by the present invention.As shown in Figure 4, this method may further comprise the steps:
In this step, when carrying out first operation, the theoretical grinding endpoint of real-time detection, the method for surveying theoretical grinding endpoint is the content of prior art, does not repeat them here.
According to the content of prior art, to different metallic, the time of implementation of first operation is set to the different fixed value; And in step 401 of the present invention, no matter which kind of metal being ground, but the theoretical grinding endpoint of equal real-time detection; When detecting theoretical grinding endpoint; Then finish first operation, so just can confirm for the first operation time of implementation exactly to different metallic, and; Even the thickness of the metal that is deposited is undesirable, also can confirm for the first operation time of implementation exactly.
Remaining tungsten grinds outside to barrier layer, oxide layer and groove, and the milling time scope is 30-80 second.
In the present invention; Detection to theoretical grinding endpoint is accomplished by first operation, after in first operation, detecting theoretical grinding endpoint, gets into second operation immediately; So just can guarantee the lucky a little higher than theoretical grinding endpoint of grinding endpoint after first operation finishes; Can guarantee that also second operation carries out from beginning near the position of theoretical grinding endpoint, when first operation and second operation are finished, can avoid the metal over-lapping in the groove.
In this step, when oxide layer was ground, the milling time scope was 5-30 second.
Thus it is clear that, based on above-mentioned chemical and mechanical grinding method, when metal is ground; The theoretical grinding endpoint of real-time detection; When detecting theoretical grinding endpoint, begin the outer remaining metal of barrier layer, oxide layer and groove is ground, then barrier layer and oxide layer are ground; And milling time is the fixed value that is provided with in advance; So just can guarantee that remaining metal grinds outside just beginning barrier layer, oxide layer and groove to the grinding of metal during near theoretical grinding endpoint, avoid the metal over-lapping in whole oxide layer and the groove, thereby improved the stability of device.
The above is merely preferred embodiment of the present invention, is not to be used to limit protection scope of the present invention.All within spirit of the present invention and principle, any modification of being done, be equal to replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. chemical and mechanical grinding method, this method comprises:
Step 1: when metal is ground, the theoretical grinding endpoint of real-time detection, when detecting theoretical grinding endpoint, execution in step 2;
Step 2: the outer remaining metal of barrier layer, oxide layer and groove is ground;
Step 3: oxide layer is proceeded to grind, and the fixed value of milling time for being provided with in advance that oxide layer is ground.
2. method according to claim 1 is characterized in that, when said metal was tungsten, the said milling time scope that the outer remaining metal of barrier layer, oxide layer and groove is ground was 30-80 second.
3. method according to claim 1 is characterized in that, the said milling time scope that oxide layer is proceeded to grind is 5-30 second.
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| CN2009100554321A CN101966687B (en) | 2009-07-27 | 2009-07-27 | Chemical mechanical lapping method |
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| CN2009100554321A CN101966687B (en) | 2009-07-27 | 2009-07-27 | Chemical mechanical lapping method |
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| CN101966687A CN101966687A (en) | 2011-02-09 |
| CN101966687B true CN101966687B (en) | 2012-11-28 |
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| CN112861199B (en) * | 2021-01-08 | 2024-02-02 | 上海华虹宏力半导体制造有限公司 | Calculation method of super junction deep groove epitaxial filling parameters |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872633A (en) * | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US6217410B1 (en) * | 1996-07-26 | 2001-04-17 | Speedfam-Ipec Corporation | Apparatus for cleaning workpiece surfaces and monitoring probes during workpiece processing |
| CN101130235A (en) * | 2006-08-23 | 2008-02-27 | 上海华虹Nec电子有限公司 | Method for improving detection of chemical mechanical grinding termination and detection of front channel |
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- 2009-07-27 CN CN2009100554321A patent/CN101966687B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5872633A (en) * | 1996-07-26 | 1999-02-16 | Speedfam Corporation | Methods and apparatus for detecting removal of thin film layers during planarization |
| US6217410B1 (en) * | 1996-07-26 | 2001-04-17 | Speedfam-Ipec Corporation | Apparatus for cleaning workpiece surfaces and monitoring probes during workpiece processing |
| CN101130235A (en) * | 2006-08-23 | 2008-02-27 | 上海华虹Nec电子有限公司 | Method for improving detection of chemical mechanical grinding termination and detection of front channel |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20121116 |
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Effective date of registration: 20121116 Address after: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Patentee after: Semiconductor Manufacturing International (Beijing) Corporation Address before: 201203 Shanghai City, Pudong New Area Zhangjiang Road No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |