CN102000912B - Laser micro/nano processing system and method - Google Patents
Laser micro/nano processing system and method Download PDFInfo
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- CN102000912B CN102000912B CN201010290490.5A CN201010290490A CN102000912B CN 102000912 B CN102000912 B CN 102000912B CN 201010290490 A CN201010290490 A CN 201010290490A CN 102000912 B CN102000912 B CN 102000912B
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Abstract
The invention provides a laser micro/nano processing system and a laser micro/nano processing method. The system of the invention comprises a laser light source, an optical retardation component, an optical focusing component and a computer-controlled micro mobile station, wherein the laser light source is used for providing a first laser beam having a first wavelength and a second laser beam having a second wavelength, the pulse widths of the first laser beam and the second laser beam range from femtosecond to nanosecond and the first wavelength is different from the second wavelength; the optical retardation component is used for regulating the optical path of the first laser beam or the second laser beam so that the difference between the arrival times of the first laser beam and the second laser beam at a focus is not greater than the level life time for a photochromic material to be processed to be excited to an excited state; the optical focusing component is used for focusing the first laser beam and the second laser beam onto the same focus; and the computer-controlled micro mobile station is used for regulating a photochromic material on the computer-controlled micro mobile station to the focus.
Description
Technical field
The present invention relates to a kind of laser micro/nano processing method and system of processing, the method and system of the laser micro/nano processing that particularly a kind of machining resolution and machining accuracy can accurately be controlled.
Background technology
Since over half a century, photoetching technique occupies the dominant position of micro-nano process technology always.While utilizing laser technology to carry out materials processing, its machining resolution that can reach is subject to the restriction of classical optics diffraction limit always, be difficult to carry out the processing of nanoscale, this problem is the Scientific problems at the core that first development nano-photon process technology need to solve, and is also the focus that this area scientist pays close attention to.
Femtosecond laser micro-nano processing is the Novel ultra-fine process technology that integrates ultrafast laser technique, microtechnic, superhigh precision location technology, 3-D graphic CAD manufacturing technology and actinic material technology, has simple, low cost, high-resolution, the feature such as very three-dimensional.This technology is utilized two-photon absorption effect, laser and material sphere of action can be confined in very little region, thereby reach the machining resolution below diffraction limit.Calendar year 2001, the people such as Satoshi Kawata have obtained the machining resolution of 120nm with the femtosecond pulse of 780nm, and prepare three-dimensional manometer ox structure, see Nature, Satoshi Kawata etc., 2001,412 (6848): 697-698.2008, the people such as Xian-Zi Dong realized the machining resolution of 50nm by controlling laser parameter, see Appl.Phys.Lett., Xian-Zi Dong etc., American Institute of Physics, 2008,92:091113.The people such as Dengfeng Tan utilize the blockage effect of polymer, have realized the unsettled polymer nano rice noodles of 15nm live width between the cuboid of processing in advance, see Appl.Phys.Lett., Dengfeng Tan etc., American Institute of Physics, 2007,90:071106.Above-mentionedly all adopt single beam to process about breaking through the work of diffraction limit, still need and want a kind of method that can accurately control machining resolution and machining accuracy.
In order further to improve machining resolution, some scientists propose to utilize beam of laser to cause photopolymerization reaction, and another beam of laser limit the region reacting, and only makes exciting light focus center place react with material, greatly quantum jump diffraction limit.The wavelength 473nm laser excitation free radical that the people such as Timothy F.Scott produce with all solid state laser causes photopolymerization reaction, near the free radical wavelength 365nm laser consumption exciting light focus producing with another bundle argon ion laser, thereby conversion zone is limited in the minimum scope of exciting light focus, obtain the machining resolution below diffraction limit, see Science, Timothy F.Scott etc., 2009,324 (5929), 913.The wavelength that the people such as Linie Li utilize femtosecond pulse laser to produce is 800nm, pulse width is that the near-infrared laser of 200fs passes through the photopolymerization of biphotonic process atarting material, utilize another to restraint same wavelength, pulse width is that the pulse laser of 50ps suppresses near extent of reaction exciting light focus by single photon process, has obtained the machining resolution of longitudinal 40nm, sees Science, Linjie Li etc., 2009,324 (5929), 910.The people such as Trisha L.Andrew cover one deck photochromic films on photoresist, this film sees through the laser of the 325nm wavelength of helium cadmium laser generation, and the region of the laser action of the 633nm wavelength producing at He-Ne laser absorbs the laser of 325nm wavelength, and utilize Lloyd's mirror interference instrument to make the interference fringe of two-beam light and dark, only make the 325nm wavelength laser in very small region see through photochromic films and light-sensitive material effect, obtain the machining resolution of horizontal 36nm, see Science, Trisha L.Andrew etc., 2009, 324 (5929), 917.But above-mentioned technology only limits to can process by the material of optical excitation and excitation state light intensity cancellation characteristic processed having, and is difficult to the material of other types to be processed.
Therefore, need a kind of wavelength matching by selection and light-sensitive material absorption characteristic to be processed accurately to control the machining resolution of light-sensitive material to be processed and the laser micro/nano processing system of machining accuracy and method.
Summary of the invention
The object of this invention is to provide laser micro/nano processing method and system that a kind of machining resolution and machining accuracy can accurately be controlled.The laser beam that has a wavelength matching with the absorption characteristic of light-sensitive material to be processed by utilization is realized the processing of several functions material, the material ranges of expansion micro-nano processing.
The invention provides a kind of laser micro/nano processing system, this system comprises:
LASER Light Source, for first laser beam with the first wavelength and second laser beam with second wave length are provided, the pulse width of the first laser beam and the second laser beam is respectively from nanosecond to femtosecond scope and the first wavelength is different from second wave length;
Optical delay assembly, is not more than light-sensitive material to be processed and is excited to life time of the level of excitation state for the time difference that regulates the light path of the first laser beam or the second laser beam to make the first laser beam and the second laser beam arrive focus;
Optical focus assembly, for focusing on same focus by the first laser beam and the second laser beam; With
Computer-controlled micro-travelling carriage, is adjusted to described focus for going up the light-sensitive material of placing.
Preferably, the repetition rate of described the first laser beam and described the second laser beam is 1Hz-100MHz, and wavelength regulation scope is 157nm-1064nm, and polarization state is linear polarization, circular polarization or elliptical polarization.
Preferably, described LASER Light Source comprises the first laser instrument that the first laser beam is provided and the second laser that the second laser beam is provided.
Preferably, described LASER Light Source comprises:
For the first laser instrument of the first laser beam is provided,
For the first laser beam is divided into two-part beam splitter,
Frequency multiplier, for being the second laser beam of the frequency multiplication of the first laser beam frequency by one of two parts the first laser beam forming frequency, and
For seeing through the wave filter of the second laser beam.
Preferably, further comprise optical gate for regulating the time for exposure according to system of the present invention and for regulating the optical attenuator of exposure energy.
Preferably, described optical delay assembly comprises four speculums that are positioned on the micro-mobile platform of one dimension, by regulating the micro-travelling carriage of this one dimension to change the light path of described the first laser beam or the second laser beam.
Preferably, described optical delay assembly comprises two right-angle prisms that are positioned on the micro-mobile platform of one dimension, by regulating the micro-travelling carriage of this one dimension to change the light path of described the first laser beam or the second laser beam.
Preferably, the moving range of the micro-travelling carriage of described one dimension is 0.1 μ m-1m.
Preferably, described optical focus assembly comprises;
The extender lens respectively the first laser beam and the second laser beam being expanded,
For the first laser beam and the second laser beam being superposed to dichroscope and the speculum of the stack laser beam of advancing along same light path, and
For the object lens that stack laser beam is focused on.
Preferably, described object lens are dry object lens, water immersion objective or oil immersion objective.
Preferably, laser micro/nano processing system of the present invention, further comprises:
Be used for the first wave plate of the polarization state that changes the first laser beam;
Be used for the second wave plate of the polarization state that changes the second laser beam.
Preferably, described computer-controlled micro-travelling carriage is three-dimensional micro-travelling carriage, and three-dimensional micro-travelling carriage is 1nm-200mm at x, y and z direction moving range.
The invention provides a kind of laser micro/nano processing method, the method comprises the following steps:
Regulate LASER Light Source, the first laser beam of LASER Light Source output and the second laser beam are adjusted to respectively to the first wavelength and the second wave length that can make light-sensitive material to be processed produce two-photon effect, the pulse width of the first laser beam and the second laser beam is respectively from nanosecond to femtosecond scope and the first wavelength is different from second wave length
Regulate the light path of the first laser beam or the second laser beam, the time difference that makes the first laser beam and the second laser beam arrive this light-sensitive material is not more than this light-sensitive material and is excited to the life time of the level of excitation state,
The first laser beam and the second laser beam are focused on to same focus, and
Regulate micro-travelling carriage, make the light-sensitive material on micro-travelling carriage be positioned at described focus to carry out micro-nano processing.
Preferably, the time for exposure that regulates respectively described the first laser beam and the second laser beam is 1ms-10min, and the exposure energy that regulates respectively described the first laser beam and the second laser beam is to act on average laser power on light-sensitive material at 0.1 μ W-1W.
Preferably, the light-sensitive material that described light-sensitive material is selected from organic photosensitive material, inorganic light-sensitive material and contains metal ion.
Preferably, described organic photosensitive material be selected from can occur photopolymerization reaction organic material, can occur photolysis reactions organic material, contain and the organic material of photo-crosslinking molecule can occur and contain the organic material that photoisomerization reaction molecular can occur.
Preferably, described inorganic light-sensitive material be selected from can occur photopolymerization reaction inorganic material, can occur photolysis reactions inorganic material, contain can occur photo-crosslinking molecule inorganic material, contain and the inorganic material of photoreduction molecule can occur and contain the inorganic material that photooxidation reaction molecule can occur.
Preferably, the light-sensitive material that contains metal ion described in is selected from the inorganic material, the organic material that contains the metal ion that photoreduction molecule can occur that contain the metal ion that photoreduction molecule can occur, contain and the inorganic material of photooxidation reaction molecule can occur and contain the organic material that photooxidation reaction molecule can occur.
Superiority of the present invention:
1. system and method for the present invention makes two bundle laser implementation spaces and temporal stack, can in light-sensitive material, carry out the processing of nanoscale, obtains higher than the machining resolution with single beam laser Shu Jiagong.
2. method of the present invention can be by regulating respectively exposure energy and the time for exposure of two-beam and light-sensitive material effect, accurately controlled working resolution ratio and machining accuracy.
3. method of the present invention can, by selecting sharp light wavelength used to mate with the characteristic of different materials, can be expanded rapidoprint scope, realizes the processing of several functions material.
Accompanying drawing explanation
Fig. 1 illustrate by wavelength be respectively 800nm and 500nm two bundle laser beams focus on same focus place and a branch of 800nm laser beam focused on to the calculating surface of intensity distribution at focus place;
Fig. 2 illustrate by wavelength be respectively 800nm and 400nm two bundle laser beams focus on same focus place and a branch of 800nm laser beam focused on to the calculating surface of intensity distribution at focus place;
Fig. 3 is the schematic diagram of laser-processing system according to an embodiment of the invention;
Fig. 4 is the schematic diagram of laser-processing system according to another embodiment of the present invention;
Fig. 5 is the schematic diagram of the optical delay assembly of one embodiment of the invention;
Fig. 6 is the schematic diagram of the optical delay assembly of another embodiment of the present invention;
Fig. 7 uses the system of Fig. 3 to use respectively 800nm single beam laser (a) and the electron scanning micrograph with the linear array structure of stack laser beam (b) acquisition of 800nm and 400nm double beams laser;
Fig. 8 is the electron scanning micrograph that uses the unsettled line structure of the system acquisition of Fig. 3;
Fig. 9 uses the system of Fig. 3 to use respectively 800nm single beam laser (a) and the electron scanning micrograph with the two-dimensional lattice array structure of stack laser beam (b) acquisition of 800nm and 400nm double beams laser;
Figure 10 is the electron scanning micrograph that uses congruent point prepared by the system of Fig. 3.
In figure,
1, the first pulse laser; 2, the second pulse laser; 3, semi-transparent semi-reflecting lens;
4, the first speculum; 5, frequency-doubling crystal; 6, wave filter;
7, the first optical gate; 8, the second optical gate; 9, optical delay assembly;
10, first lens; 11, the second lens; 12, the 3rd lens;
13, the 4th lens; 14, the first wave plate; 15, the second wave plate;
16, the first smooth fader; 17, the second smooth fader;
18, dichroscope; 19, the second speculum; 20, object lens;
21, the micro-travelling carriage of three-dimensional that computer is handled; 22, the micro-mobile platform of one dimension;
23, the 3rd speculum; 24, the 4th speculum; 25, the 5th speculum;
26, the 6th speculum; 27, the first right-angle prism; 28, the second right-angle prism;
The specific embodiment
In conjunction with the preferred embodiment of the present invention, the present invention will be described below with reference to accompanying drawings.Should be appreciated that in the following description, provide for example explanation to optical element of many concrete details so that the overall understanding to the embodiment of the present invention.But, it should be understood by one skilled in the art that the present invention is not only applicable to one or more concrete descriptions, and be applicable to other structural detail, wavelength and material etc.Description hereinafter cited embodiment is illustrative and not restrictive.
The laser of two bundle different wave lengths is superposeed and the laser beam of stack is acted on to same focus, the light distribution at this focus place is determined at the product of the intensity distribution function at focus place by this two bundles laser.By relatively characterizing the full width at half maximum (FWHM) of intensity distribution function of laser beam beam spot diameter,, the FWHM that can find out the intensity distribution function product of stack laser beam is less than the FWHM of the light intensity square of traditional employing beam of laser.Therefore, use the stack laser beam obtaining by the laser of the two bundle different wave lengths that superpose to act on the light-sensitive material with two-photon absorption effect, can realize higher than the high-resolution micro-nano processing that acts on this resolution ratio with the light-sensitive material of two-photon absorption effect with single beam laser bundle.The stack light beam that the obtains relation between intensity distribution function and this intensity distribution function and the machining resolution at same focus place below superposes the laser beams of concrete analysis two bundle different wave lengths.
According to Debye method, see J.Stamners, Waves in Focal Regions, Adam Hilger, Bristol, 1986, be that intensity distribution function after object lens that light that λ, polarization direction are φ is α by angular aperture focus on is for a branch of wavelength:
Wherein,
(formula 1-1)
(formula 1-2)
(formula 1-3)
In formula, u and v are respectively optical coordinates, u=znk sin
2α, v=rnk sin α;
k=2 π/λ,
nA is numerical aperture of objective, the refractive index that n is material to be processed; J
0, J
1, J
2be a class Bessel function; φ=0 or pi/2 refer to that respectively the polarization direction of laser is x and y.
As can be seen from the above equation, laser beam wavelength λ difference, polarization direction difference, its intensity distribution function is different.Laser for two bundle different wave lengths focuses on same focus by same object lens, need calculate respectively intensity distribution function I separately
1and I
2, then do product and calculate the light distribution of stack light beam in focus.
With by the z-direction propagate λ
1the first laser and the λ of=800nm
2the second laser of=500nm, being focused on by the object lens of NA=1.45 in the material of refractive index n=1.515 is example, calculates the intensity distribution function I transverse to laser propagation direction at focus place
1with I
2product, the result obtaining is as shown in Figure 1.
In Fig. 1, I1, I2 represent respectively the laser intensity of 800nm laser and 500nm laser, and Ix and Iy represent that respectively laser used is the linearly polarized light along x and y direction polarization.Can find out the superpose stack laser beam that forms of two bundle different wave length laser is less than to the FWHM of a branch of 800nm laser beam at the intensity distribution function of focus square at the FWHM of the intensity distribution function product of focus from the full width at half maximum (FWHM) of light distribution, and the polarization direction of laser also there is impact to FWHM.
With by the z-direction propagate λ
1the first laser and the λ of=800nm
2the second laser of=400nm, being focused on by the object lens of NA=1.45 in the material of refractive index n=1.515 is example, calculates the light intensity at focus place at the distribution function I transverse to laser propagation direction
1with I
2product, the result obtaining is as shown in Figure 2.
In Fig. 2, I1, I2 represent respectively the laser intensity of 800nm and 400nm, and Ix and Iy represent that respectively laser used is the linearly polarized light along x and y direction polarization.Can find out the superpose stack laser beam that forms of two bundle different wave length laser is less than to the FWHM of a branch of 800nm laser beam at the intensity distribution function of focus square at the FWHM of the intensity distribution function product of focus from the FWHM of light distribution, and the polarization direction of laser also there is impact to FWHM.
From the result of calculation shown in formula 1 and Fig. 1 and Fig. 2, the diameter of the bundle spot being formed to same focus by two bundle Laser Focusings of different wave length is less than the beam spot diameter, that traditional two-photon effect that utilizes beam of laser forms.In other words, when the light-sensitive material with two-photon absorption effect being added to man-hour, the resolution ratio that its resolution ratio will be processed higher than traditional two-photon effect that utilizes single beam laser with the stack light beam that the laser beam of two bundle different wave lengths forms.Further, by regulating respectively the polarization direction of two bundle laser beams, can further improve machining resolution.
Below in conjunction with preferred embodiment, laser micro/nano processing system of the present invention is further detailed.
Fig. 3 shows the schematic diagram of laser micro/nano processing system according to an embodiment of the invention.This laser micro/nano processing system 100 comprises: laser instrument 1, semi-transparent semi-reflecting lens 3, frequency multiplier, for example frequency-doubling crystal 5, optical delay assembly 9, optical focus assembly and travelling carriage 21.Laser instrument 1 is the pulse laser from nanosecond to femtosecond scope for generation of pulse width.On the output light path of laser instrument 1, place semi-transparent semi-reflecting lens 3 and be used to form transmitted light and reverberation.On transmitted light path, place successively frequency-doubling crystal 5 and wave filter 6 along main shaft.Wave filter 6 is for frequency multiplication light beam is carried out to filtering, and in its output energy, the energy of double-frequency laser is not less than 99.5% with the ratio of wave filter output energy.System 100 can further comprise that the lens 12,13 that are positioned on transmission frequency doubled light path for example after wave filter are for expanding frequency doubled light.On the reflected light path of semi-transparent semi-reflecting lens 3, place speculum 4 along main shaft and make to reflect fundamental frequency light light path and transmission frequency doubled light light path parallel, place optical delay assembly 9 and be excited to the life time of the level of excitation state for regulating light path to make the time difference of two bundle laser beams arrival focuses be not more than light-sensitive material to be processed, then be the lens 10 and 11 for fundamental frequency light is expanded afterwards thereafter.System 100 can further comprise the wave plate 15,14 laying respectively on transmitted light path and reflected light path, for regulating respectively the polarization state of laser on transmitted light path and reflected light path.Described wave plate is preferably full-wave plate, half-wave plate and the quarter-wave plate that operation wavelength is place light path optical maser wavelength.The optical focus assembly of system 100 for example comprises dichroscope 18 and the speculum 19 for two bundle laser stacking being added as to beam of laser, and for laser beam being focused on to the object lens 20 of the light-sensitive material on the micro-travelling carriage 21 of three-dimensional that is placed on computer manipulation.Described object lens are preferably dry object lens, water immersion objective or oil immersion objective, and numerical aperture is 0.7-1.65, and multiplication factor is 10-100.The micro-travelling carriage of three-dimensional that computer is handled is preferably 1nm-200mm at x, y and z direction moving range.System 100 can further comprise lay respectively on transmitted light path and reflected light path for regulating the optical gate 8,7 of time for exposure, and lay respectively on transmitted light path and reflected light path for regulating the optical attenuator 17,16 of exposure energy.Preferably, lens 10,12,12 and 13 focal length is respectively within the scope of 1mm-500mm.According to the laser micro/nano processing system of the preferred embodiment, basic frequency laser bundle and double-frequency laser bundle are formed to the stack laser beam of propagating along same light path, and this stack laser beam is focused on to same focus for light-sensitive material to be processed is processed, a kind of method of light-sensitive material being carried out to micro-nano processing with high-resolution and high manufacturing accuracy is provided.
Fig. 4 shows the schematic diagram of laser micro/nano processing system according to another embodiment of the present invention.Laser micro/nano processing system 200 comprises: laser instrument 1, laser instrument 2, optical delay assembly 9, optical focus assembly and travelling carriage 21.Laser instrument 1 is the first pulse laser from nanosecond to femtosecond scope for generation of the pulse width with the first wavelength.Semi-transparent semi-reflecting lens 3 shown in laser instrument 2 alternate figures 3, reflector 4, frequency-doubling crystal 5, wave filter 6, is the second pulse laser from nanosecond to femtosecond scope for generation of the pulse width with the second wave length that is different from the first wavelength.In system 200, except laser instrument 2, other structures of system are identical with system shown in Figure 3 100.
The method that the present invention utilizes laser to carry out micro-nano processing is carried out in system of the present invention, for example, comprise the steps:
1) open LASER Light Source, the first laser beam and the second laser beam are adjusted to respectively to the first wavelength and the second wave length that can make light-sensitive material to be processed produce two-photon effect, output mean power is within the scope of 1mW-10W, and wavelength, within the scope of 157nm-1064nm, is built system of the present invention.
2) regulate the light path of the first laser beam or the second laser beam, the time difference that makes the first laser beam and the second laser beam arrive this light-sensitive material is not more than this light-sensitive material and is excited to the life time of the level of excitation state,
3) regulate the lens in beam-expanding system by parallel main axis direction, and the micro-travelling carriage of three-dimensional that utilizes computer to handle makes two-beam focus on same focal plane through object lens;
4) regulate the speculum described in system of the present invention, semi-transparent semi-reflecting lens, right-angle prism and dichroscope, make two-beam focus on the same point on same focal plane through object lens.
5) light-sensitive material is placed in computer handle the micro-travelling carriage of three-dimensional on sample stage on, by the polarization state of wave plate control laser, by the optical gate control time for exposure at 1ms-10 minute, by the average laser power of light fader control action on light-sensitive material for example within the scope of 0.1 μ W-1W;
6) utilize the motion of the three-dimensional travelling carriage of computer manipulation to realize the focus scanning machining in light-sensitive material after two-beam stack.
Obtain the structure of processing by last handling process: by step 3) light-sensitive material after two-beam effect that obtains through washing, add the techniques such as thermal decomposition, ablation, etching, development, select corresponding process conditions according to the kind of material; By not carrying out interactional light-sensitive material part with light does not remove to obtain minus structure, or will carry out interactional light-sensitive material part with light and remove to obtain eurymeric structure.
In above-mentioned technical scheme, described light-sensitive material is organic photosensitive material, inorganic light-sensitive material or the light-sensitive material that contains metal ion.
In above-mentioned technical scheme, described organic photosensitive material is organic material, the organic material that photolysis reactions can occur that photopolymerization reaction can occur, contain and the organic material of photo-crosslinking molecule can occur or contain the organic material that photoisomerization reaction molecular can occur.
In above-mentioned technical scheme, described inorganic light-sensitive material is inorganic material, the inorganic material that photolysis reactions can occur that photopolymerization reaction can occur, contain can occur photo-crosslinking molecule inorganic material, contain and the inorganic material of photoreduction molecule can occur or contain the inorganic material that photooxidation reaction molecule can occur.
In above-mentioned technical scheme, described in contain metal ion light-sensitive material be the inorganic material, the organic material that contains the metal ion that photoreduction molecule can occur that contain the metal ion that photoreduction molecule can occur, contain can occur photooxidation reaction molecule inorganic material, contain the organic material that photooxidation reaction molecule can occur.
The high machining resolution obtaining according to laser micro/nano processing system of the present invention and method below in conjunction with instantiation explanation.
Example 1
Below in conjunction with laser micro/nano processing system according to the present invention, and the concrete implementation step of utilizing this system to prepare linear array structure in the photoresist of commodity on glass substrate SCR500 by name to being placed on is described in detail.
Laser micro/nano processing system 100 comprises: laser instrument 1, semi-transparent semi-reflecting lens 3, frequency-doubling crystal 5, optical delay assembly 9, optical focus assembly and travelling carriage 21.Laser instrument 1 is for example selected titanium gemstone femto second pulse laser instrument, and its output wavelength is 800nm, and pulse width is 100fs, and pulse recurrence frequency is 82MHz, and beam diameter is 1.8mm, the laser beam that polarization state is linear polarization.On the output light path of titanium gemstone femto second pulse laser instrument 1, be placed with the semi-transparent semi-reflecting lens 3 of for example making of BK7 glass, its saturating reflectivity is for example 7: 3, to form transmitted light and reverberation.Frequency multiplier on transmitted light path for example comprises the I type BBO frequency-doubling crystal that is 1mm such as thickness 5 of placing successively along main shaft and the interference filter 6 that filters 800nm wavelength.Transmitted light obtains the 400nm wavelength frequency doubled light that pure beam diameter is 1.2mm after frequency-doubling crystal, and wherein the energy of 400nm wavelength laser is not less than 99.5% with the ratio of the energy of wave filter Output of laser.System 100 can further comprise lens 13 that lens 12 that the focal length on transmission path is for example 60mm and focal length are 150mm as extender lens for frequency doubled light is expanded.On the reflected light path of semi-transparent semi-reflecting lens 3, for example place and make reflected light path and transmitted light light path parallel with the speculum 4 that BK7 glass is made along main shaft, place thereafter optical delay assembly 9 and be excited to for regulating light path to make the time difference of two bundle laser beams arrival focuses be not more than this light-sensitive material the life time of the level of excitation state.This optical delay assembly 9 for example comprises the micro-mobile platform 22 of one dimension and four speculums 23,24,25 and 26 of making of BK7 glass, as shown in Figure 5.After optical delay assembly, place the lens 11 that lens 10 that for example focal length is 35mm and focal length are 150mm, for fundamental frequency light is expanded.Thereafter place the half-wave plate 14 that operation wavelength equals 800nm, its optical axis direction is consistent with fundamental frequency polarisation of light direction.Optical focus assembly comprises that two-beam is combined into a road by the dichroscope 18 made of BK7 glass and the speculum 19 with BK7 glass making after frequency multiplication light path, and by numerical aperture be thereafter 1.45, multiplication factor is the oil immersion objective 20 of 100 times, focuses on the light-sensitive material inside being placed on the micro-travelling carriage 21 of three-dimensional that computer handles.The for example three-dimensional micro-travelling carriage 21 that regulates computer to handle makes focus after two-beam stack on the interface of glass substrate and light-sensitive material and its movement velocity is set is 10nm/ms.Regulating light fader 17 to make the mean power of 400nm wavelength light is that 2.3 μ W, adjusting light fader 16 make the mean power of 800nm wavelength light in 14.91mW～11.19mW range, in light-sensitive material, expose, to not carry out interactional light-sensitive material part with light with ethanol solution and remove, the linear array structure obtaining on glass basic surface is as shown in Fig. 7 (b).In Fig. 7 (b), in linear array structure, the mean power of the 800nm wavelength laser of each line is followed successively by 14.91mW, 14.50mW, 14.09mW, 13.73mW, 13.36mW, 13.02mW, 12.68mW, 12.36mW, 12.06mW, 11.77mW, 11.48mW and 11.19mW from left to right.Can find out, in the situation that keeping 400nm wavelength laser bundle working power to remain unchanged, by reducing 800nm wavelength laser bundle working power, can improve the machining resolution of light-sensitive material.This example is can obtain the line structure that machining resolution is less than 100nm under the mean power 11.19mW processing conditions of 2.3 μ W, 800nm wavelength laser in the mean power of 400nm wavelength laser.
Comparative example 1
To above-mentioned example 1, only with 800nm single beam laser bundle, light-sensitive material is exposed, it is identical that other experiment conditions keep, and obtains contrast and experiment.Regulating light fader 17 to make the power of 400nm wavelength light is that 0W, adjusting light fader 16 make the mean power of 800nm wavelength light in 14.91mW～13.36mW range, in light-sensitive material, expose, to not carry out interactional light-sensitive material part with light with ethanol solution and remove, the linear array structure obtaining on glass basic surface is as shown in Fig. 7 (a).In Fig. 7 (a), in linear array structure, the mean power of the 800nm wavelength laser of each line is followed successively by 14.91mW, 14.50mW, 14.09mW, 13.73mW, 13.36mW from left to right.Further reduce laser power, can not obtain required line structure.This example can obtain the line structure that machining resolution is 120nm under the mean power 13.36mW of 800nm wavelength laser processing conditions.
Can find out, employing obtains being less than the machining resolution of 100nm by changing the working power of 800nm laser according to laser micro/nano processing system of the present invention and method, be better than the 120nm resolution ratio of utilizing traditional a branch of 800nm laser to obtain, and according to using the machining energy of two bundle laser beams lower than the machining energy that uses single beam laser bundle.
Example 2
Below in conjunction with accompanying drawing 3, to system of the present invention, and the concrete implementation step of utilizing this system to prepare unsettled line structure in the photoresist that is placed on commodity on glass substrate SCR500 by name is described in detail:
This system comprises: laser instrument 1 is selected titanium gemstone femto second pulse laser instrument, and the output wavelength of this laser instrument 1 is 800nm, and pulse width is 100fs, and pulse recurrence frequency is 82MHz, and beam diameter is 1.8mm, and polarization state is linear polarization; First open titanium gemstone femto second pulse laser instrument 1, place a semi-transparent semi-reflecting lens 3 of making of BK7 glass on output light path, reflectivity is 7: 3 thoroughly; On transmitted light path, place successively I type BBO frequency-doubling crystal 5 that a thickness is 1mm and an interference filter 6 that filters 800nm wavelength obtains the 400nm wavelength frequency doubled light that pure beam diameter is 1.2mm along main shaft, and the lens 13 that the lens 12 that are 60mm by focal length and focal length are 150mm expand frequency doubled light; On the reflected light path of semi-transparent semi-reflecting lens 3, place one along main shaft and make itself and another light path parallel with the speculum 4 that BK7 glass is made, place by the micro-mobile platform 22 of one dimension and two right-angle prisms 27 and 28 with the making of BK7 glass and form optical delay assembly 9 thereafter, as shown in Figure 6, and the lens 11 that the lens 10 that are 35mm by focal length and focal length are 150mm expand fundamental frequency light, thereafter placing operation wavelength is the half-wave plate 14 of 800nm, and its optical axis direction is consistent with fundamental frequency polarisation of light direction; Utilize place after fundamental frequency light path one dichroscope 18 of making of BK7 glass and of placing after frequency multiplication light path, with the speculum 19 that BK7 glass is made, two-beam is combined into a road, and by numerical aperture be thereafter 1.45, multiplication factor is the oil immersion objective 20 of 100 times, focuses on the light-sensitive material inside being placed on the micro-travelling carriage 21 of three-dimensional that computer handles; The movement velocity that the micro-travelling carriage 21 of three-dimensional of computer manipulation is set is 170nm/ms, regulating light fader 16 and 17 to make the mean power of 400nm wavelength light is that the mean power of 2.5 μ W, 800nm wavelength light is 12.23mW, in light-sensitive material, expose, to not carry out interactional light-sensitive material part with light with ethanol solution removes, the spacing of processing be in advance the unsettled line structure that obtains between the cuboid of 1 μ m as shown in Figure 8, resolution ratio is less than 25nm.
Example 3
Below in conjunction with Fig. 3, to system of the present invention, and the concrete implementation step of utilizing this system to prepare two-dimensional lattice array structure in the photoresist that is placed on commodity on glass substrate SCR500 by name is described in detail:
This system comprises: laser instrument 1 is selected titanium gemstone femto second pulse laser instrument, and the output wavelength of this laser instrument 1 is 800nm, and pulse width is 100fs, and pulse recurrence frequency is 82MHz, and beam diameter is 1.8mm, and polarization state is linear polarization; First open titanium gemstone femto second pulse laser instrument 1, place a semi-transparent semi-reflecting lens 3 of making of BK7 glass on output light path, reflectivity is 7: 3 thoroughly; On transmitted light path, place successively I type BBO frequency-doubling crystal 5 that a thickness is 1mm and an interference filter 6 that filters 800nm wavelength obtains the 400nm wavelength frequency doubled light that pure beam diameter is 1.2mm along main shaft, and the lens 13 that the lens 12 that are 60mm by focal length and focal length are 150mm expand frequency doubled light; On the reflected light path of semi-transparent semi-reflecting lens 3, place one along main shaft and make itself and another light path parallel with the speculum 4 that BK7 glass is made, place by the micro-mobile platform 22 of one dimension and four speculums with the making of BK7 glass and form optical delay assembly 9 thereafter, and the lens 11 that the lens 10 that are 35mm by focal length and focal length are 150mm expand fundamental frequency light, thereafter placing operation wavelength is the half-wave plate 14 of 800nm, and its optical axis direction and fundamental frequency polarisation of light angular separation are 45 °; Utilize place after frequency multiplication light path one dichroscope 18 of making of BK7 glass and of placing after fundamental frequency light path, with the speculum 19 that BK7 glass is made, two-beam is combined into a road, and by numerical aperture be thereafter 1.45, multiplication factor is the oil immersion objective 20 of 100 times, focuses on the light-sensitive material inside being placed on the micro-travelling carriage 21 of three-dimensional that computer handles; The micro-travelling carriage 21 of three-dimensional that regulates computer to handle makes focus after two-beam stack on the interface of glass substrate and light-sensitive material; Regulate optical gate 7 and 8 to make the time for exposure of two-beam be 100ms.Regulate light fader 16 to make the mean power of 400nm wavelength light make the mean power of 800nm wavelength light in 15.02mW～10.34mW range at 6.0 μ W～4.2 μ W range, adjusting light fader 16, in light-sensitive material, expose, to not carry out interactional light-sensitive material part with light with ethanol solution and remove, the two-dimensional lattice array structure obtaining on glass basic surface is as shown in Fig. 9 (b).In Fig. 9 (b), keep from left to right the mean power of 400nm wavelength constant, regulate the mean power of 800nm wavelength laser to be followed successively by 15.02mW, 14.12mW, 13.20mW, 12.34mW, 11.50mW, 10.84mW, 10.34mW; Keep from top to bottom the mean power of 800nm wavelength constant, regulate the mean power of 400nm wavelength laser to be followed successively by 6.0 μ W, 5.8 μ W, 5.6 μ W, 5.4 μ W, 5.2 μ W, 5.0 μ W, 4.8 μ W, 4.6 μ W.This example, at the mean power 4.6 μ W of 400nm wavelength laser, can obtain resolution ratio under the mean power 10.84mW processing conditions of 800nm wavelength laser and be less than 130nm.
Comparative example 3
To above-mentioned example 3, only with 800nm single beam laser bundle, light-sensitive material is exposed, it is identical that other experiment conditions keep, and obtains contrast and experiment.Regulating light fader 17 to make the power of 400nm wavelength light is that 0W, adjusting light fader 16 make the mean power of 800nm wavelength light in 15.02mW～13.20mW range, in light-sensitive material, expose, to not carry out interactional light-sensitive material part with light with ethanol solution and remove, the lattice array structure obtaining on glass basic surface is as shown in Fig. 9 (a).In Fig. 9 (a), the mean power of 800nm wavelength laser is followed successively by 15.02mW, 14.12mW, 13.20mW, and under 13.20mW mean power, obtaining machining resolution is 155nm.While using the laser beam of 800nm lower than 13.20mW mean power, cannot obtain dot structure.
Can find out, adopt according to laser micro/nano processing system of the present invention and method by changing respectively the working power of two bundle laser beams, obtain being less than the machining resolution of 130nm, be better than the 155nm resolution ratio of utilizing traditional a branch of 800nm laser to obtain, and according to using the machining energy of two bundle laser beams lower than the machining energy that uses single beam laser bundle.
Example 4
Below in conjunction with accompanying drawing, to system of the present invention, and the concrete implementation step of utilizing this system to prepare congruent point in the photoresist that is placed on commodity on glass substrate SCR500 by name is described in detail:
This system comprises: laser instrument 1 is selected titanium gemstone femto second pulse laser instrument, and the output wavelength of this laser instrument 1 is 800nm, and pulse width is 100fs, and pulse recurrence frequency is 82MHz, and beam diameter is 1.8mm, and polarization state is linear polarization; First open titanium gemstone femto second pulse laser instrument 1, place a semi-transparent semi-reflecting lens 3 of making of BK7 glass on output light path, reflectivity is 7: 3 thoroughly; On transmitted light path, place successively I type BBO frequency-doubling crystal 5 that a thickness is 1mm and an interference filter 6 that filters 800nm wavelength obtains the 400nm wavelength frequency doubled light that pure beam diameter is 1.2mm along main shaft, and the lens 13 that the lens 12 that are 60mm by focal length and focal length are 150mm expand frequency doubled light; On the reflected light path of semi-transparent semi-reflecting lens 3, place one along main shaft and make itself and another light path parallel with the speculum 4 that BK7 glass is made, place by the micro-mobile platform 22 of one dimension and four speculums with the making of BK7 glass and form optical delay assembly 9 thereafter, and the lens 11 that the lens 10 that are 35mm by focal length and focal length are 150mm expand fundamental frequency light, thereafter placing operation wavelength is the half-wave plate 14 of 800nm, regulates its optical axis direction to make the polarization direction angle of fundamental frequency light and frequency doubled light be respectively 0 °, 45 ° and 90 °; Utilize place after frequency multiplication light path one dichroscope 18 of making of BK7 glass and one one of placing after fundamental frequency light path, with the speculum 19 that BK7 glass is made, two-beam is combined into a road, and by numerical aperture be thereafter 1.45, multiplication factor is the oil immersion objective 20 of 100 times, focuses on the light-sensitive material inside being placed on the micro-travelling carriage 21 of three-dimensional that computer handles; The micro-travelling carriage 21 of three-dimensional that regulates computer to handle makes focus after two-beam stack on the interface of glass substrate and light-sensitive material; Regulate optical gate 7 and 8 to make the time for exposure of two-beam be 100ms, regulating light fader 16 and 17 to make the mean power of 400nm wavelength light is 5.8 μ W, the mean power of 800nm wavelength light is respectively 12.34mW, 13.20mW and 11.79mW for described three kinds of polarization directions, in light-sensitive material, expose, to not carry out interactional light-sensitive material part with light with ethanol solution removes, as shown in figure 10, resolution ratio is less than 135nm to the congruent point obtaining on glass basic surface.As can be seen here, by changing the polarization direction of laser beam, can improve according to the machining accuracy of the laser-processing system of the embodiment of the present invention.
Although illustrate and described the present invention here in the context of the embodiment of limited quantity, can implement in a variety of forms the present invention within the spirit that does not depart from essential characteristic of the present invention.Therefore, generally say, illustrate and the embodiment that describes will think as explanation but not as restriction.For example, just can provide above-mentioned detailed explanation according to adjusting the time for exposure.But above-mentioned technology can be applied in the same manner gain and control.For example replace and increase or reduce light exposure, can increase similarly or reduce amount of gain.In addition, can increase or reduce as required the quantity of time for exposure and gain.Therefore, additional claims and not only represent scope of the present invention by description above, wish will to comprise all variations within the meaning that is equal to by claims at this and scope.
The present invention obtains country's 973 plans (2010CB934103) and subsidizes.
Claims (24)
1. a laser micro/nano processing system, comprising:
LASER Light Source, for first laser beam with the first wavelength and second laser beam with second wave length are provided, the pulse width of the first laser beam and the second laser beam is respectively from nanosecond to femtosecond scope and the first wavelength is different from second wave length, and described the first wavelength and second wave length can make light-sensitive material to be processed produce two-photon effect;
Optical delay assembly, is not more than light-sensitive material to be processed and is excited to life time of the level of excitation state for the time difference that regulates the light path of the first laser beam or the second laser beam to make the first laser beam and the second laser beam arrive focus;
Optical focus assembly, for focusing on same focus by the first laser beam and the second laser beam; With
Computer-controlled micro-travelling carriage, be adjusted to described focus for going up the light-sensitive material of placing, it is characterized in that, the repetition rate of described the first laser beam and described the second laser beam is 1Hz-100MHz, wavelength regulation scope is 157nm-1064nm, and polarization state is linear polarization, circular polarization or elliptical polarization.
2. laser micro/nano processing system according to claim 1, is characterized in that, described LASER Light Source comprises the first laser instrument that the first laser beam is provided and the second laser that the second laser beam is provided.
3. laser micro/nano processing system according to claim 1, is characterized in that, described LASER Light Source comprises:
For the first laser instrument of the first laser beam is provided,
For the first laser beam is divided into two-part beam splitter,
Frequency multiplier, for being the second laser beam of the frequency multiplication of the first laser beam frequency by one of two parts the first laser beam forming frequency, and
For seeing through the wave filter of the second laser beam.
4. laser micro/nano processing system according to claim 1, further comprises optical gate for regulating the time for exposure and for regulating the optical attenuator of exposure energy.
5. laser micro/nano processing system according to claim 1, it is characterized in that, described optical delay assembly comprises four speculums that are positioned on the micro-mobile platform of one dimension, by regulating the micro-travelling carriage of this one dimension to change the light path of described the first laser beam or the second laser beam.
6. laser micro/nano processing system according to claim 1, it is characterized in that, described optical delay assembly comprises two right-angle prisms that are positioned on the micro-mobile platform of one dimension, by regulating the micro-travelling carriage of this one dimension to change the light path of described the first laser beam or the second laser beam.
7. according to the laser micro/nano processing system described in claim 5 or 6, it is characterized in that, the moving range of the micro-travelling carriage of described one dimension is 0.1 μ m-lm.
8. laser micro/nano processing system according to claim 1, is characterized in that, described optical focus assembly comprises;
The extender lens respectively the first laser beam and the second laser beam being expanded,
For the first laser beam and the second laser beam being superposed to dichroscope and the speculum of the stack laser beam of advancing along same light path, and
For the object lens that stack laser beam is focused on.
9. laser micro/nano processing system according to claim 8, is characterized in that, described object lens are dry object lens, water immersion objective or oil immersion objective.
10. laser micro/nano processing system according to claim 1, further comprises:
Be used for the first wave plate of the polarization state that changes the first laser beam;
Be used for the second wave plate of the polarization state that changes the second laser beam.
11. laser micro/nano processing systems according to claim 1, is characterized in that, described computer-controlled micro-travelling carriage is three-dimensional micro-travelling carriage, and three-dimensional micro-travelling carriage is 1nm-200mm at x, y and z direction moving range.
12. laser micro/nano processing systems according to claim 1, comprising:
Pulse laser, for generation of first laser beam with the first wavelength,
Semi-transparent semi-reflecting lens, for the first laser beam being divided into first laser beam of advancing along the first light path and second laser beam of advancing along the second light path,
Be positioned in order the first speculum, the first optical gate, optical delay assembly, first lens, the second lens, the first wave plate and the first smooth fader in the first light path,
Be positioned in order frequency-doubling crystal, wave filter, the second optical gate, the 3rd lens, the 4th lens, the second wave plate and the second smooth fader in the second light path,
For the first laser beam and the second laser beam being focused to dichroscope, the second speculum and the object lens of same focus, and
The micro-travelling carriage of computer-controlled three-dimensional.
13. laser micro/nano processing systems according to claim 1, is characterized in that, the light-sensitive material that described light-sensitive material is selected from organic photosensitive material, inorganic light-sensitive material and contains metal ion.
14. laser micro/nano processing systems according to claim 13, it is characterized in that, described organic photosensitive material be selected from can occur photopolymerization reaction organic material, can occur photolysis reactions organic material, contain and the organic material of photo-crosslinking molecule can occur and contain the organic material that photoisomerization reaction molecular can occur.
15. laser micro/nano processing systems according to claim 13, it is characterized in that, described inorganic light-sensitive material be selected from can occur photopolymerization reaction inorganic material, can occur photolysis reactions inorganic material, contain can occur photo-crosslinking molecule inorganic material, contain and the inorganic material of photoreduction molecule can occur and contain the inorganic material that photooxidation reaction molecule can occur.
16. laser micro/nano processing systems according to claim 13, it is characterized in that, described in contain metal ion light-sensitive material be selected from the inorganic material, the organic material that contains the metal ion that photoreduction molecule can occur that contain the metal ion that photoreduction molecule can occur, contain and the inorganic material of photooxidation reaction molecule can occur and contain the organic material that photooxidation reaction molecule can occur.
17. 1 kinds of laser micro/nano processing methods, is characterized in that, the method comprises the following steps:
Regulate LASER Light Source, the first laser beam of LASER Light Source output and the second laser beam are adjusted to respectively to the first wavelength and the second wave length that can make light-sensitive material to be processed produce two-photon effect, the pulse width of the first laser beam and the second laser beam is respectively from nanosecond to femtosecond scope and the first wavelength is different from second wave length
Regulate the light path of the first laser beam or the second laser beam, the time difference that makes the first laser beam and the second laser beam arrive this light-sensitive material is not more than this light-sensitive material and is excited to the life time of the level of excitation state,
The first laser beam and the second laser beam are focused on to same focus, and
Regulate micro-travelling carriage, make the light-sensitive material on micro-travelling carriage be positioned at described focus to carry out micro-nano processing, it is characterized in that, the repetition rate of described the first laser beam and described the second laser beam is 1Hz-100MHz, wavelength regulation scope is 157nm-1064nm, and polarization state is linear polarization, circular polarization or elliptical polarization.
18. laser micro/nano processing methods according to claim 17, is characterized in that, describedly the first laser beam and the second laser beam are focused on to same focus further comprise:
Respectively described the first laser beam and described the second laser beam are expanded;
The second laser beam stack by the first laser beam after expanding and after expanding, obtains the stack laser beam of advancing along same light path;
Stack laser beam is focused on to same focus, and the described light-sensitive material at focusing place is processed.
19. laser micro/nano processing methods according to claim 17, further comprising the steps:
Be positioned at the first laser beam light path and be positioned at optical gate in the second laser beam light path by regulating respectively the time for exposure that changes the first laser beam and the second laser beam; With
Be positioned at the first laser beam light path and be positioned at optical attenuator in the second laser beam light path by regulating respectively the exposure energy that changes the first laser beam and the second laser beam.
20. laser micro/nano processing methods according to claim 17, it is characterized in that, the time for exposure that regulates respectively described the first laser beam and the second laser beam is 1ms-10min, and the exposure energy that regulates respectively described the first laser beam and the second laser beam is to act on average laser power on light-sensitive material at 0.1 μ W-1W.
21. laser micro/nano processing methods according to claim 17, is characterized in that, the light-sensitive material that described light-sensitive material is selected from organic photosensitive material, inorganic light-sensitive material and contains metal ion.
22. laser micro/nano processing methods according to claim 17, it is characterized in that, described organic photosensitive material be selected from can occur photopolymerization reaction organic material, can occur photolysis reactions organic material, contain and the organic material of photo-crosslinking molecule can occur and contain the organic material that photoisomerization reaction molecular can occur.
23. laser micro/nano processing methods according to claim 17, it is characterized in that, described inorganic light-sensitive material be selected from can occur photopolymerization reaction inorganic material, can occur photolysis reactions inorganic material, contain can occur photo-crosslinking molecule inorganic material, contain and the inorganic material of photoreduction molecule can occur and contain the inorganic material that photooxidation reaction molecule can occur.
24. laser micro/nano processing methods according to claim 17, it is characterized in that, described in contain metal ion light-sensitive material be selected from the inorganic material, the organic material that contains the metal ion that photoreduction molecule can occur that contain the metal ion that photoreduction molecule can occur, contain and the inorganic material of photooxidation reaction molecule can occur and contain the organic material that photooxidation reaction molecule can occur.
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| CN201010290490.5A CN102000912B (en) | 2010-09-21 | 2010-09-21 | Laser micro/nano processing system and method |
| US13/824,634 US9187318B2 (en) | 2010-09-21 | 2011-09-15 | Laser micro/nano processing system and method |
| EP19214556.3A EP3650162B1 (en) | 2010-09-21 | 2011-09-15 | Laser micro/nano fabricating system and method of processing a metal ion solution |
| PCT/CN2011/001567 WO2012037780A1 (en) | 2010-09-21 | 2011-09-15 | Laser micro/nano processing system and method |
| JP2013528496A JP5814371B2 (en) | 2010-09-21 | 2011-09-15 | Laser micro / nano processing method |
| EP11826307.8A EP2620249B1 (en) | 2010-09-21 | 2011-09-15 | Laser micro/nano processing system and method |
| US14/930,856 US9636777B2 (en) | 2010-09-21 | 2015-11-03 | Laser micro/nano processing system and method |
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| US6285002B1 (en) * | 1999-05-10 | 2001-09-04 | Bryan Kok Ann Ngoi | Three dimensional micro machining with a modulated ultra-short laser pulse |
| US6809291B1 (en) * | 2002-08-30 | 2004-10-26 | Southeastern Universities Research Assn., Inc. | Process for laser machining and surface treatment |
| CN1981291A (en) * | 2004-06-30 | 2007-06-13 | 通明国际科技有限公司 | Laser-based method and system for processing targeted surface material and article produced thereby |
| WO2006029495A1 (en) * | 2004-09-14 | 2006-03-23 | La Corporation De L'ecole Polytechnique De Montreal | Process for fabricating optical waveguides |
| CN1796039A (en) * | 2004-12-29 | 2006-07-05 | 中国科学院理化技术研究所 | Method and system for fabricating multiple periodic microstructure for photosensitive material by laser |
| CN101458451A (en) * | 2008-12-31 | 2009-06-17 | 北京航空航天大学 | Light path structure suitable for femtosecond laser two-photon mirco-nano processing system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20170005450A1 (en) * | 2015-06-30 | 2017-01-05 | Canon Kabushiki Kaisha | Apparatus |
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