CN102122659A - Bipolar complementary metal oxide semiconductor device and preparation method thereof - Google Patents
Bipolar complementary metal oxide semiconductor device and preparation method thereof Download PDFInfo
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- CN102122659A CN102122659A CN2011100092160A CN201110009216A CN102122659A CN 102122659 A CN102122659 A CN 102122659A CN 2011100092160 A CN2011100092160 A CN 2011100092160A CN 201110009216 A CN201110009216 A CN 201110009216A CN 102122659 A CN102122659 A CN 102122659A
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Abstract
The invention relates to a bipolar complementary metal oxide semiconductor device and a preparation method thereof. The bipolar complementary metal oxide semiconductor device comprises a transverse diffusion metal oxide semiconductor device and a bipolar transistor device, wherein the bipolar transistor device comprises a conduction type well for forming a collector, the transverse diffusion metal oxide semiconductor device comprises a substrate and a drift region formed in the substrate, the doping concentration of the drift region and the conduction type well are formed simultaneously, and the doping concentration is consistent. By utilizing the bipolar complementary metal oxide semiconductor device, the integration cost is lowered, and a system-on-chip for forming radio frequency is ensured to be possible.
Description
Technical field
The present invention relates to a kind of bipolar complementary metal oxide semiconductor device and preparation method thereof.
Background technology
Bipolar complementary metal oxide semiconductor (Bipolar CMOS, BiCMOS) be that cmos device and bipolar device are integrated in simultaneously with the technology on the chip piece, its basic thought is to be the formant circuit with the cmos device, and is requiring to drive big capacitive load part adding bipolar device or circuit.Therefore the BiCMOS circuit had both had cmos circuit high integration, advantage of low power consumption, obtained again bipolar circuit at a high speed, the advantage of strong current drive ability.
In recent years, usually in the silicon materials of bipolar transistor, introduce germanium formation sige alloy and adjust band structure, base region as bipolar transistor, such transistor is called as silicon germanium heterojunction bipolar transistor (SiGe Heterojunction Bipolar Transistor, SiGe HBT), the performance of described silicon germanium heterojunction bipolar transistor obviously is better than the silicon bipolar transistor, and therefore, silicon germanium heterojunction bipolar transistor has obtained swift and violent development in recent years.
(Laterally Diffused Metal Oxide Semiconductor, LDMOS) device is widely used because of having better thermal stability, frequency stability, higher gain, durability, constant characteristics such as input impedance Laterally Diffused Metal Oxide Semiconductor.In order to increase the puncture voltage of transverse diffusion metal oxide semiconductor device, between the active area of Laterally Diffused Metal Oxide Semiconductor and drain region, a drift region (drift region) is arranged.When transverse diffusion metal oxide semiconductor device connect high pressure, higher voltage can be born owing to be high resistant in the drift region.Therefore, the drift region in the Laterally Diffused Metal Oxide Semiconductor is the key of such designs.
Yet, traditional transverse diffusion metal oxide semiconductor device and bipolar transistor being integrated into complex process in the bipolar complementary metal oxide semiconductor device, cost is higher.
Summary of the invention
The object of the present invention is to provide a kind of bipolar complementary metal oxide semiconductor device that can reduce cost.
Another object of the present invention is to provide a kind of above-mentioned bipolar complementary metal oxide semiconductor preparation of devices method.
A kind of bipolar complementary metal oxide semiconductor device, comprise transverse diffusion metal oxide semiconductor device and bipolar transistor, described bipolar transistor comprises the conductive type well that is used to form collector electrode, described transverse diffusion metal oxide semiconductor device comprises substrate and is formed at the interior drift region of described substrate, the doping content of described drift region and described conductive type well form simultaneously, its doping content unanimity.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described bipolar complementary metal oxide semiconductor device are the bipolar complementary metal oxide semiconductor device of SiGe.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, the doping order of magnitude of the doping content of described drift region and described conductive type well is 1e16-1e17.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described transverse diffusion metal oxide semiconductor device also comprises isolated groove and the drain diffusion regions that is formed at described drift region.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described transverse diffusion metal oxide semiconductor device also comprises the drain diffusion regions that is formed at described substrate, and described source diffusion region and described drain diffusion regions are formed at the both sides of described isolated groove.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described transverse diffusion metal oxide semiconductor device also comprises P type trap that is formed at described drift region and the source diffusion region that is formed at described P type trap, and described source diffusion region and described drain diffusion regions are formed at the both sides of described isolated groove.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described transverse diffusion metal oxide semiconductor device also comprises oxide layer and the grid that is formed at described substrate surface.
The preferred a kind of technical scheme of above-mentioned bipolar complementary metal oxide semiconductor device, described bipolar transistor is the npn type bipolar transistor device.
A kind of bipolar complementary metal oxide semiconductor preparation of devices method, described bipolar complementary metal oxide semiconductor device comprises transverse diffusion metal oxide semiconductor device and bipolar transistor, and described bipolar complementary metal oxide semiconductor preparation of devices method comprises the steps: to form substrate; On described substrate, form the collector electrode conductive type well of described bipolar transistor and the drift region of described transverse diffusion metal oxide semiconductor device synchronously.
The preferred a kind of technical scheme of above-mentioned preparation method, described collector electrode conductive type well and described drift region form by the method that ion injects.
Compared with prior art, comprise transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of the present invention, the collector electrode conductive type well of described bipolar transistor and the drift region of described transverse diffusion metal oxide semiconductor device form synchronously.Because, the technology of described transverse diffusion metal oxide semiconductor device and the technology of described bipolar transistor are compatible fully, do not need extra processing step, therefore, make radio-frequency devices technology and power supply apparatus technology in the bipolar complementary metal oxide semiconductor device can be good at integrating, reduce integrated cost, made the system level chip that forms radio frequency become possibility.
Description of drawings
Fig. 1 is the structural representation of the transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of first embodiment of the invention.
Fig. 2 is the structural representation of the bipolar transistor device in the bipolar complementary metal oxide semiconductor device of the present invention.
Fig. 3 is the structural representation of the transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of second embodiment of the invention.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, the present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 1, Fig. 1 is the structural representation of the transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of first embodiment of the invention.Described transverse diffusion metal oxide semiconductor device comprises substrate 11, be formed at drift region 12, the isolated groove 13 that is formed at described drift region 12 and drain diffusion regions 14 in the described substrate 11, be formed at source diffusion region 15 in the described substrate 11, be formed at the oxide layer 16 and the grid 17 on described substrate 11 surfaces.Described source diffusion region 15 and described drain diffusion regions 14 are formed at the both sides of described isolated groove 13.Preferably, described bipolar complementary metal oxide semiconductor device is the bipolar complementary metal oxide semiconductor device of SiGe.Described isolated groove 13 is shallow isolated grooves.Described substrate 11 is P type substrates, and described source diffusion region 15 and described drain diffusion regions 14 are diffusion regions that the n type mixes.
See also Fig. 2, Fig. 2 is the structural representation of the bipolar transistor device in the bipolar complementary metal oxide semiconductor device of the present invention.Described bipolar transistor device comprises substrate 21, be formed at conductive type well 22, isolated groove 23 in the described substrate 21, be formed at described conductive type well 22 collector electrode 25, be formed at the base stage 26 on described substrate 21 surfaces and the emitter 28 that electrically connects by contact hole 27 with described base stage 26.Preferably, described base stage 26 is P-SiGe epitaxial loayers.Described bipolar transistor is the npn type bipolar transistor device.
The drift region 12 of described transverse diffusion metal oxide semiconductor device forms synchronously with the conductive type well 22 of described bipolar transistor device, and the doping content of promptly described drift region 12 is consistent with the doping content of described conductive type well 22.Preferably, the doping order of magnitude of the doping content of described drift region 12 and described conductive type well 22 (doping level) is 1e16-1e17.Described conductive type well 22 and described drift region 12 form by the method that ion injects (IMP), and be preferred, goes on foot the mode of ions injection to improve the doping effect by three.
Please participate in Fig. 3, Fig. 3 is the structural representation of the transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of second embodiment of the invention.The transverse diffusion metal oxide semiconductor device of present embodiment comprises substrate 31, be formed at drift region 32, the isolated groove 33 that is formed at described drift region 32 and drain diffusion regions 34 in the described substrate 31, be formed at described drift region 32 P type trap 38, be formed at described P type trap 38 source diffusion region 35, be formed at the oxide layer 36 and the grid 37 on described substrate 31 surfaces.Described source diffusion region 35 and described drain diffusion regions 34 are formed at the both sides of described isolated groove 33.Because P type trap can be isolated fully by drift region 32, the transverse diffusion metal oxide semiconductor device of present embodiment can better application in RF application.
Bipolar complementary metal oxide semiconductor preparation of devices method of the present invention mainly comprises the steps:
Form substrate;
On described substrate, form the collector electrode conductive type well of bipolar transistor and the drift region of transverse diffusion metal oxide semiconductor device synchronously.Preferably, the method that described collector electrode conductive type well and described drift region are injected by ion forms to improve the doping effect, and the doping order of magnitude of the doping content of described drift region and described conductive type well 22 is 1e16-1e17.
Compared with prior art, comprise transverse diffusion metal oxide semiconductor device in the bipolar complementary metal oxide semiconductor device of the present invention, the collector electrode conductive type well of described bipolar transistor and the drift region of described transverse diffusion metal oxide semiconductor device form synchronously.Because, the technology of described transverse diffusion metal oxide semiconductor device and the technology of described bipolar transistor are compatible fully, do not need extra processing step, therefore, make the radio-frequency devices technology in the bipolar complementary metal oxide semiconductor device can be good at integrating with power supply apparatus technology, reduced integrated cost, made that (System On Chip SOC) becomes possibility to the system level chip that forms radio frequency.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except as defined by the appended claims, the invention is not restricted at the specific embodiment described in the specification.
Claims (10)
1. bipolar complementary metal oxide semiconductor device, it is characterized in that: comprise transverse diffusion metal oxide semiconductor device and bipolar transistor, described bipolar transistor comprises the conductive type well that is used to form collector electrode, described transverse diffusion metal oxide semiconductor device comprises substrate and is formed at the interior drift region of described substrate, the doping content of described drift region and described conductive type well form simultaneously, its doping content unanimity.
2. bipolar complementary metal oxide semiconductor device as claimed in claim 1 is characterized in that, described bipolar complementary metal oxide semiconductor device is the bipolar complementary metal oxide semiconductor device of SiGe.
3. bipolar complementary metal oxide semiconductor device as claimed in claim 1 is characterized in that the doping order of magnitude of described drift region and described conductive type well is 1e16-1e17.
4. bipolar complementary metal oxide semiconductor device as claimed in claim 1 is characterized in that described transverse diffusion metal oxide semiconductor device also comprises isolated groove and the drain diffusion regions that is formed at described drift region.
5. bipolar complementary metal oxide semiconductor device as claimed in claim 4, it is characterized in that, described transverse diffusion metal oxide semiconductor device also comprises the source diffusion region that is formed at described substrate, and described source diffusion region and described drain diffusion regions are formed at the both sides of described isolated groove.
6. bipolar complementary metal oxide semiconductor device as claimed in claim 4, it is characterized in that, described transverse diffusion metal oxide semiconductor device also comprises P type trap that is formed at described drift region and the source diffusion region that is formed at described P type trap, and described source diffusion region and described drain diffusion regions are formed at the both sides of described isolated groove.
7. as any described bipolar complementary metal oxide semiconductor device in the claim 1 to 6, it is characterized in that described transverse diffusion metal oxide semiconductor device also comprises oxide layer and the grid that is formed at described substrate surface.
8. as any described bipolar complementary metal oxide semiconductor device in the claim 1 to 6, it is characterized in that described bipolar transistor is the npn type bipolar transistor device.
9. bipolar complementary metal oxide semiconductor preparation of devices method, it is characterized in that, described bipolar complementary metal oxide semiconductor device comprises transverse diffusion metal oxide semiconductor device and bipolar transistor, and described bipolar complementary metal oxide semiconductor preparation of devices method comprises the steps:
Form substrate;
On described substrate, form the collector electrode conductive type well of described bipolar transistor and the drift region of described transverse diffusion metal oxide semiconductor device synchronously.
10. bipolar complementary metal oxide semiconductor preparation of devices method as claimed in claim 9 is characterized in that, described collector electrode conductive type well and described drift region form by the method that ion injects.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5962913A (en) * | 1996-01-19 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Bipolar transistor having a particular contact structure |
| CN1734748A (en) * | 2004-08-13 | 2006-02-15 | 上海先进半导体制造有限公司 | Process for manufacturing 0.8 micron silicon bipolar CMOS integrated circuit |
| CN101211786A (en) * | 2007-12-21 | 2008-07-02 | 上海宏力半导体制造有限公司 | Annealing method for enhancing transverse diffusion metal oxide semiconductor sparking resistance |
| CN101752421A (en) * | 2008-12-04 | 2010-06-23 | 东部高科股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN101866947A (en) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | Silicon germanium heterojunction bipolar transistor |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5962913A (en) * | 1996-01-19 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Bipolar transistor having a particular contact structure |
| CN1734748A (en) * | 2004-08-13 | 2006-02-15 | 上海先进半导体制造有限公司 | Process for manufacturing 0.8 micron silicon bipolar CMOS integrated circuit |
| CN101211786A (en) * | 2007-12-21 | 2008-07-02 | 上海宏力半导体制造有限公司 | Annealing method for enhancing transverse diffusion metal oxide semiconductor sparking resistance |
| CN101752421A (en) * | 2008-12-04 | 2010-06-23 | 东部高科股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN101866947A (en) * | 2010-05-12 | 2010-10-20 | 上海宏力半导体制造有限公司 | Silicon germanium heterojunction bipolar transistor |
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