CN102165581B - 引线框基板的制造方法 - Google Patents
引线框基板的制造方法 Download PDFInfo
- Publication number
- CN102165581B CN102165581B CN200980137966.7A CN200980137966A CN102165581B CN 102165581 B CN102165581 B CN 102165581B CN 200980137966 A CN200980137966 A CN 200980137966A CN 102165581 B CN102165581 B CN 102165581B
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- resin
- joint pin
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- preforming
- metallic plate
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Abstract
提供引线框基板,其特征在于,具有:金属板,其具有第一面与第二面,连接柱,其形成在所述第一面上,布线,其形成在所述第二面上,预成型用树脂层;所述预成型用树脂的厚度与所述连接柱的高度相同。
Description
技术领域
本发明涉及用于封装半导体元件的优选的半导体衬底的技术,特别涉及引线框基板的制造方法及半导体装置。
本申请基于2008年9月29日在日本申请的专利申请2008-250860号主张优先权,并将其内容引用于此。
背景技术
以晶片工艺制造的各种存储器、CMOS、CPU等的半导体元件具有电连接用端子。对于其电连接用端子的间距(pitch)与用于搭载半导体元件的印刷电路板侧的连接部之间的间距,其尺寸的差异为数倍至数百倍左右。为此,在连接半导体元件与印刷电路板时,使用被称为内插器(interposer)的用于变换间距的调节用衬底(半导体元件封装用衬底)。
在该内插器的一个面上安装半导体元件,用另一个面或内插器的周边与印刷电路板连接。内插器的内部或表面具有金属引线框,用引线框圈上电连接路径,内插器由此扩大外部连接端子的间距,所述外部连接端子用于与印刷电路板进行连接。
在图2A~图2C示意地示出了作为内插器的一例的QFN(QuadFlatNon-Lead:无引线方形扁平)式引线框基板的结构。
如图2A所示,在铝或铜构成的引线框的中央部位设置用于搭载半导体元件22的引线框的平坦部分21,在引线框的外周部位配置间距宽松的引线23。应用基于金丝等的金属丝24的焊接法,来连接引线23与半导体元件22的电连接用端子。如图2B所示,最终用成型用树脂25来进行成型,以此将整体实现一体化。
并且,图2A及图2B中的保持构件(retainingmember)27用于保持引线框,用成型用树脂25进行成型后,如图2C所示那样除去该保持构件27。
在图2A~图2C示出的内插器中,只在半导体元件22的外周部及引线框的外周部的引线23上进行电连接,因此,不面向端子数多的半导体元件。
在端子数少的情况下,将金属插销安装到内插器的外周部分的提取电极(extractionelectrodes)26上,以此连接印刷电路板与内插器。此外,在端子数多的情况下,采用BGA(BallGridArray:球阵列封装),其将焊料球以阵列状配置在内插器的外周部分的外部连接端子上。
对于面积窄小且端子数多的半导体元件,由于在布线层仅为一层的内插器中难以变换间距,所以采取将布线层多层化层叠的方法。
在面积窄小且端子数多的半导体元件的情况下,多用将端子以阵列状配置于半导体元件底面的方法来生成半导体元件的连接端子。因此,内插器侧的外部连接端子也配置为阵列状,另外,在连接内插器与印刷电路板时采用利用微量焊料球的倒装片的连接方式。采取用钻孔器或激光从上部在垂直方向钻出细孔,并在孔内镀金属,从而使得内插器内的引线实现内插器上下导电。
在基于上述方式的内插器中,外部连接端子的间距能够小型化至150~200μm左右,因此,能够增加连接端子的数量,但是接合的可靠性及稳定性会降低,而不面向要求高可靠性的车载用途等。
这样的内插器根据使用的材料及结构,引线框部分所保持的结构可以有多种,如陶瓷、P-BGA(PlasticBallGridArray:塑料球栅阵列封装)、CSP(ChipSizePackage:芯片尺寸封装)、LGA(LandGridArray:触电阵列封装)那样,基体材料是有机物等,并基于目的与用途区分使用。
不论任何时,为了应对半导体元件的小型化、多管脚化、高速化,而在推进与内插器的半导体元件的连接部分的小间距化(finerpitch)及对高速信号的对应。如考虑小型化的进展,端子部分的间距有必要是80~100μm。
可是,蚀刻薄金属来生成导电部兼支持部件的引线框,为了进行稳定的蚀刻处理以及然后加工中的搬运处理(handling),优选金属板的厚度为120μm左右。此外,引线接合(wirebonding)时为了得到充分的接合强度,需要一定程度的金属层厚度与焊盘面积。考虑这两点,金属板的厚度最低需要100~120μm左右。此时,从金属板的两侧开始蚀刻,小型化的限度是引线的间距为120μm左右、引线宽度为60μm左右。
还有别的问题,在制造引线框的过程中使用保持构件之后要废弃保持构件,随之发生成本提高。
以图2A~图2C说明此点。
引线框粘贴在由聚酰亚胺带构成的保持构件27上。用固定用树脂28或固定用胶带28在引线框的平坦部分21上固定半导体元件22。然后,进行引线接合,并用传递模塑成型法以成型用树脂25一并成型多个半导体元件22。最后,实施外部加工,按每半导体元件22进行切断、剪断从而完成。在引线框的内面29作为与印刷电路板连接的连接面的情况下,成型时为了不使成型用树脂25绕进引线23内面的连接端子面而粘在该面上,保持构件27必不可缺。
但是,由于最终不需要保持构件27而进行成型加工后卸下并扔掉,由此牵涉成本提高。
作为该领域的发明,例如在专利文献1中已公开的发明中,在同一个引线框同时安装半导体元件和被动器件,并将其成型,以此提供部件嵌入式半导体装置。
此外,作为解决所述问题的一种对策,提供能够生成超小间距的引线,并能够进行稳定的引线接合加工,而且经济性优越的引线框基板,(虽然在专利文献1中没有公开)例如,可以设想以预成型用树脂作为引线支撑体的结构的引线框基板。
这一种対策是在制造出引线框基板的基础上,在金属板的第一面生成用于生成连接柱的第一抗蚀图案,在第二面生成用于生成布线图案的第二抗蚀图案,从第一面上对铜进行蚀刻直到所希望的厚度,然后,在第一面涂敷预成型用树脂而生成预成型层,然后进行第二面的蚀刻来生成引线(布线),然后剥离两个面上的第一及第二抗蚀图案。
这样制造出的引线框基板可以推测能够期待如下优点。即,能够使金属的厚度薄至能够精细蚀刻的程度,且由于支撑体为预成型用树脂,因此能够进行稳定的蚀刻,此外,由于超音波能量的扩散小,所以引线接合性也优越。另外,由于不使用由聚酰亚胺带生成的保持构件27,所以也能够控制由此产生的成本提高。
现有技术文献
专利文献
专利文献1:JP特开2006-245618号公报。
发明内容
发明要解决的问题
但是,若采用上述的一种对策,则会导致工序上的问题。
即,在上述的一种对策中,在蚀刻至金属板的厚度方向中途的面上涂敷预成型用树脂的工序在技术层面上存在困难。涂敷的厚度必须是给予引线框充分所需刚性的程度,而且,连接柱的底面必须完全露出。
作为这样控制厚度涂敷的方法,例如已举出这样的方法:使用注射器等使树脂流入涂敷面底的一点,并等待该树脂扩散至整个涂敷面,但是预成型用树脂有一定程度的粘性,为此,扩散到整个面花费时间,从而担心生产层面上的问题。
此外,有时因表面张力使树脂成为球状而停留在狭窄范围内,此时,即使注入少量的树脂其高度也会变高,导致容易产生树脂到达连接柱底面的不良后果。
由此,也考虑利用分配器等的装置,在涂敷面底设定多个注入部分的方法,但是依然由于预成型用树脂的粘性,将分配器从一个注入位置移动到其他位置时树脂会拉出丝,从而容易产生其拉出的丝粘在连接柱底面的不良后果。
本发明是为了解决上述的以往的技术中的问题而做出的,其目的在于,提供一种在制造带有预成型的引线框的过程中,能够简便地以恰当厚度配置预成型用树脂的引线框基板的制造方法及半导体装置。
用于解决问题的手段
本发明的第一方式是包括以下步骤的引线框基板的制造方法,这些步骤是:
(1)在金属板的第一面与第二面上涂敷感光性抗蚀剂或粘贴干膜,
(2)在所述第一面与第二面上,对所述感光性抗蚀剂或所述干膜进行图案曝光后进行显影,由此在所述第一面上生成用于生成连接柱的第一抗蚀图案,而且,在所述第二面上形成用于生成布线图案的第二抗蚀图案;
(3)对所述金属板的所述第一面蚀刻至所述金属板的中途,生成所述连接柱;
(4)用预成型用树脂填充所述金属板的所述第一面,直到所填充的厚度能够埋没所述蚀刻所生成的面为止;
(5)在所述预成型用树脂的厚度方向对所述预成型用树脂进行均匀地除去处理,直到露出所述连接柱的底面为止;
(6)蚀刻所述金属板的所述第二面,来生成布线图案;
由此,预成型用树脂的上面的高度大致等同于连接柱的底面高度,能够可靠地达到保持引线框基板刚性并在该引线框基板上完全露出连接柱底面的目标。
本发明的第二方式在本发明的第一方式记载的引线框基板的制造方法的基础上,所述预成型用树脂为薄膜状。
由此,能够比利用液状树脂的方式更简便地制造所希望的引线框基板。
本发明的第三方式在本发明的第一方式或本发明的第二方式记载的引线框基板的制造方法的基础上,在真空腔内进行所述预成型用树脂的填充。
由此,能够减少填充预成型用树脂时产生气泡等的现象,能够制造更高品质的引线框基板。
本发明的第四方式是一种引线框基板,具有:多个连接柱,其是通过对具有第一面与第二面的衬底的第一面进行蚀刻,从而由衬底形成的,衬底是一张单层的仅由铜构成的衬底;布线,其是通过对衬底的第二面进行蚀刻,从而由衬底形成的;预成型用树脂层,其由薄膜状的热可塑性树脂构成,填充到多个连接柱之间的空间中。连接柱和布线都由单一的衬底构成,预成型用树脂层的厚度与连接柱的高度相同。
本发明的第五方式是一种半导体装置,在引线框基板上安装半导体元件,用引线接合来电连接所述引线框基板与所述半导体元件;所述其引线框基板具有:多个连接柱,其是通过对具有第一面与第二面的衬底的第一面进行蚀刻,从而由衬底形成的,衬底是一张单层的仅由铜构成的衬底;布线,其是通过对衬底的第二面进行蚀刻,从而由衬底形成的;预成型用树脂层,其由薄膜状的热可塑性树脂构成,填充到多个连接柱之间的空间中。连接柱和布线都由单一的衬底构成,预成型用树脂层的厚度与连接柱的高度相同。
发明效果
若采用本发明,则在制造带有预成型的引线框基板时,能够简便地使预成型用树脂的厚度大致等同于连接柱的高度。
由此,作为引线框基板的支撑体,所述预成型用树脂兼备具有充分刚性且完全露出连接柱的条件。因此,可以得到具有充分的机械强度,而且在连接方面也具有高可靠性的接合强度。
附图说明
图1A是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图1B是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图1C是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图1D是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图1E是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图1F是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图1G是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图1H是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图1I是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
图2A是示意地示出了以往的引线框基板的一个例子的剖面图。
图2B是示意地示出了以往的引线框基板的一个例子的剖面图。
图2C是示意地示出了以往的引线框基板的一个例子的剖面图。
具体实施方式
下表面,利用图1A~图1I,说明作为应用本发明的引线框基板的制造方法的一个例子的LGA(LandGridArray:触电阵列封装)型的引线框基板。图1A~图1I是示意地示出了本发明的引线框基板的制造工序的一个例子的剖面图。
制造出的每个单位的LGA具有10mm见方的尺寸,并具有俯视时呈现168管脚的阵列状的外部连接部,衬底带有多个面,并经过以下的制造工序后进行切断、剪断,来得到各LGA型的引线框基板。
首先,如图1A所示,准备宽度为150mm、厚度为150μm的长尺寸带状的铜衬底1。
接着,如图1B所示,用辊涂机(rollcoater)在铜衬底1的双面涂敷5μm厚的感光性抗蚀剂2(OFPR4000,东京应化株式会社(TOKYOOHKAKOGYOCO.,LTD.)制造)后,以90℃进行预烤(pre-baked)。此外,也可以粘贴干膜2,来代替涂敷感光性抗蚀剂2。
接着,通过具有所希望图案的图案曝光用光掩模,对双面的图案进行曝光,然后用1%的氢氧化钠溶液进行显影处理后,进行水洗及二次烘烤(post-baked),得出如图1C所示的抗蚀图案3。并且,在铜衬底的一个面(与搭载有半导体元件的面相反侧的面,在本实施例子中以下称第一面)上生成用于生成连接柱的第一抗蚀图案3,在另一个面(是搭载半导体元件的面,本实施例中以下称第二面)上生成用于生成布线图案的第二抗蚀图案3。
此外,如图1I所示,半导体元件10搭载在衬底中央部的引线上表面。在半导体元件10的外周的引线上表面生成引线接合用焊盘4。在引线的内面,例如在俯视的阵列上配置连接柱5,该连接柱5用于将来自上部引线的电信号导入内面。
此外,有必要将半导体元件10周围的焊盘4中的几个焊盘电连接到位于半导体元件下表面的连接柱5上。为此,为了将分别与半导体元件10周边的焊盘4中的几个焊盘相连接的布线图案6,以与位于半导体元件下表面的连接柱5相连接的方式,形成为从衬底的外周朝向中心方向例如形成为放射状(未图示)。
接着,用背板(BackSheet)覆盖铜衬底1的第二面侧来保护该第二面后,利用氯化铁溶液在铜衬底1的第一面进行第一次蚀刻处理,并对在第一面中从第一抗蚀图案3露出的铜衬底1的部位进行蚀刻,蚀刻至该部位的厚度变薄至30μm(图1D)。
氯化铁溶液的比重为1.38,液温为50℃。第一次蚀刻时,对铜衬底1上的形成了用于生成连接柱的第一抗蚀图案3的部位,不进行蚀刻处理。由此,能够生成与印刷电路板能够进行外部连接的连接柱5,该连接柱5在铜衬底1的厚度方向上,从由第一次蚀刻处理生成的蚀刻面延伸至铜衬底1的下侧面的高度。
此外,在第一次蚀刻中,并不是用蚀刻处理将需要进行蚀刻处理的部位的铜衬底1完全溶解除去,而是使蚀刻处理进行至中途为止,使得在蚀刻成所规定厚度的铜衬底1的阶段结束蚀刻处理。
接着,如图1E所示,关于第一面,用20%的氢氧化钠水溶液剥离第一抗蚀图案3,剥离液的温度为100℃。
接着,如图1F所示,利用薄膜状的热可塑性树脂(NEX―130,新日铁化学(NipponSteelChemicalCo.,Ltd.)制造),冲压加工生成预成型用树脂层11。将薄膜状的热可塑性树脂的厚度调整为能够使预成型用树脂层11填充至高出连接柱5的底面20μm的位置,即,树脂的厚度为130μm。
冲压时利用真空加压式层压装置,冲压部的温度为100℃,真空腔内的真空度为0.2torr,冲压时间为30秒,以此进行预成型用树脂层11的冲压加工。
这样,作为预成型用树脂层11,利用薄膜状的热可塑性树脂有简便加工的效果。
此外,进行真空腔内的冲压加工,有除去在预成型用树脂层11内产生的空隙的效果,能够抑制在预成型用树脂层11内产生孔隙。
然后,在冲压加工预成型用树脂层11后,作为二次烘烤,以180℃进行60分钟的加热。在这个阶段,因为第一面不区分蚀刻的部分与没有蚀刻的部分,都处于覆盖着预成型用树脂层11的状态,其实现保护膜的作用,所以下述中的第二面的蚀刻加工中不会蚀刻到第一面。
二次烘烤预成型用树脂层11之后,除去第二面的背板后进行蚀刻。利用氯化铁溶液作为蚀刻溶液,该溶液的比重为1.32,液温为50℃。蚀刻目的为在第二面上生成布线图案,溶解并除去第二面上的从第二抗蚀图案3露出的铜。
然后,如图1G所示,对覆盖第一面的预成型用树脂层11进行研磨除去,研磨至露出连接柱5的底面为止。利用抛光辊旋转式研磨装置作为研磨装置,抛光辊使用相当于800号的粗度(thickness)。
接着,如图1H所示,剥离第二面的第二抗蚀图案3,得到所希望的LGA型引线框基板。
接着,剥离第二抗蚀图案3之后,对于前述的通过研磨除去而露出底面连接柱5的金属面,用无电解电镀镍/钯/金生成法实施表面处理,而生成镀层12。镀层12的生成也可以应用电解电镀方法。但是,在电解电镀方法中,需要生成用于供给电镀电流的电镀电极,但因用于生成电镀电极的引线区域狭窄而引线较为困难。为此,在本实施例中采用不需要供给用电极的无电解电镀镍/钯/金生成法。
即,在连接柱5的金属面实施酸性脱脂、软蚀刻、酸洗、铂催化剂活化处理、预浸、无电解镀铂、无电解电镀金,由此生成镀层12。镀层12的厚度是镍为3μm、铂金为0.2μm、金为0.03μm。在所使用的电镀液中,镍为“EmplateNI”(梅尔特斯会社(MeltexInc)制造)、铂为“PAUROBONDEP”(劳姆安德哈斯会社(RohmandHaasCompany)制造)、金为“PAUROBONDIG”(劳姆安德哈斯会社(RohmandHaasCompany)制造)。
接着,在引线框上用固定用黏合剂13或固定用胶带13黏合、搭载半导体元件10之后,用金丝14对半导体元件10的电连接用端子与布线图案的规定的部位(引线接合用焊盘4)进行引线接合之后,用预成型用树脂15进行成型,使其覆盖引线框与半导体元件10,从而得到各半导体衬底。
对拼版(imposition)的半导体衬底进行裁剪,得到各半导体衬底。
产业上的可利用性
能够简便地制造具有充分的机械强度而且在连接方面也具有高可靠性的引线框基板。
附图标记的说明
1铜衬底
2感光性抗蚀剂或干膜
3抗蚀图案
4引线接合用焊盘
5连接柱
6布线图案
10半导体元件
11预成型层
12镀层
13固定用黏合剂或固定用胶带
14金丝
15预成型用树脂
21引线框的平坦部分
22半导体元件
23引线
24金属丝
25成型用树脂
26提取电极
27保持构件
28固定用树脂或固定用胶带
29引线框的内面
Claims (2)
1.一种引线框基板的制造方法,其特征在于,包括以下步骤:
在金属板的第一面与第二面上涂敷感光性抗蚀剂或粘贴干膜,
在所述第一面与第二面上,对所述感光性抗蚀剂或所述干膜进行图案曝光后进行显影,由此在所述第一面上生成用于生成连接柱的第一抗蚀图案,而且,在所述第二面上生成用于生成布线图案的第二抗蚀图案,
将所述金属板的所述第一面一侧蚀刻至所述金属板的中途,生成所述连接柱,
用预成型用树脂填充所述金属板的所述第一面一侧,直到所填充的预成型用树脂的厚度达到能够埋没通过所述蚀刻生成的面的厚度为止,所述预成型用树脂是利用薄膜状的热可塑性树脂形成的,
在所述预成型用树脂的厚度方向上对所述预成型用树脂进行均匀地除去处理,直到露出所述连接柱的底面为止,
蚀刻所述金属板的所述第二面一侧,来生成布线图案;
在所述预成型用树脂的厚度方向上对所述预成型用树脂进行均匀地除去处理直到露出所述连接柱的底面为止的步骤之前,为了形成所述布线图案而蚀刻所述金属板的所述第二面。
2.根据权利要求1记载的引线框基板的制造方法,其特征在于,在真空腔内进行所述预成型用树脂的填充。
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