CN102171796A - 形成氮化硅基薄膜或碳化硅基薄膜的方法 - Google Patents

形成氮化硅基薄膜或碳化硅基薄膜的方法 Download PDF

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CN102171796A
CN102171796A CN2009801398511A CN200980139851A CN102171796A CN 102171796 A CN102171796 A CN 102171796A CN 2009801398511 A CN2009801398511 A CN 2009801398511A CN 200980139851 A CN200980139851 A CN 200980139851A CN 102171796 A CN102171796 A CN 102171796A
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precursor
free radical
silicon
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radical precursor
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A·B·马利克
S·D·纳马尼
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Applied Materials Inc
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Abstract

本文提供一种沉积氮化硅基介电层的方法。该方法包括引导一硅前体及一氮自由基前体至一沉积腔室中。该硅前体具有N-Si-H键、N-Si-Si键及/或Si-Si-H键。该氮自由基前体实质上不含氧。该氮自由基前体是在沉积腔室外部产生。该硅前体和该氮自由基前体彼此反应而形成氮化硅基介电层。

Description

形成氮化硅基薄膜或碳化硅基薄膜的方法
技术领域
本发明有关于形成氮化硅基(silicon nitride based)膜或碳硅基(silicon carbon based)膜。
背景技术
自从数十年前引入半导体组件之后，至今组件几何结构的尺寸大幅缩小。现代半导体制造设备常态性地制造特征尺寸为250nm、180nm与65nm的组件，并且正在发展新的设备，以期制造具有更小几何结构的组件。然而，较小尺寸意味着组件必须更靠近地一起运作，可能提高包括串扰(cross talk)与寄生电容在内的电性干扰机率。
为了降低电性干扰的程度，会使用介电绝缘材料来填充介于组件、金属线与其它组件特征结构之间的间隙、沟渠和其它空间。所选择的介电材料通常容易形成在组件特征结构之间的空隙内且具有低介电常数(即，「k值」)。具有较低k值的介电质能较佳地减小串扰与RC时间延迟，并且降低组件的总体功率耗损。已知介电材料包括氧化硅，当以已知CVD技术沉积氧化硅时，其具有介于4.0至4.2之间的平均k值。
虽然已知CVD氧化硅的k值能为多种组件结构所接受，但由于组件尺寸持续缩小且组件密度不断提高，使得半导体制造商寻求具有更低k值的介电材料。已发展出一种在氧化硅中掺杂氟的方法，以制造出介电常数低达约3.4至约3.6的掺杂氧化硅膜(即，「FSG」膜)。亦研发出另一种旋涂玻璃技术，将高流动性前体(如，含氢硅盐酸类，HSQ)涂覆在基板上来形成多孔性低k膜。
此外，在各种半导体结构(例如，浅沟渠隔离结构、金属层内联机结构或其它半导体结构)中也会使用氮化硅膜和碳化硅膜进行电性隔离。可利用CVD技术来形成氮化硅膜与碳化硅膜。已知的氮化硅膜和碳化硅膜是在高温下形成，例如550℃。550℃的CVD工艺带来的热预算可能对半导体结构中的井区及/或掺质区分布情况造成不良影响。
因此，期望能够改善目前的氮硅基薄膜或碳硅基薄膜沉积方法。
发明内容
本发明实施例意欲提供比已知工艺更加优越的方法，该方法采用远程等离子体系统(RPS)来产生含氮自由基前体及/或惰性气体自由基前体，以在低工艺温度(例如，约100℃或更低温)下与有机硅及/或硅前体反应形成氮化硅基介电层或碳硅基介电层。例如，用来形成氮化硅基层(silicon nitride based layer)的硅前体具有N-Si-H键、N-Si-Si键及/或Si-H键。用来形成碳硅基层(silicon carbon based layer)的有机硅前体具有C-Si-H键及/或C-Si-Si键。由于该含氮自由基前体及/或惰性气体自由基前体实质上不含氧，因此该方法能依期望地形成氮化硅基层或碳硅基层。
一实施例提供一种沉积氮化硅基介电层的方法。该方法包括将一硅前体和一氮自由基前体引入一沉积腔室中。该硅前体具有N-Si-H键、N-Si-Si键及/或Si-Si-H键。该氮自由基前体实质不含氧。该氮自由基前体是在该沉积腔室的外部产生。该硅前体与该氮自由基前体反应而形成氮化硅基介电层。
另一实施例提供一种沉积氮化硅基介电层的方法。该方法包括引导一硅前体与一氮自由基前体至一沉积腔室中。该硅前体具有通式SiHnX4-n，n为1～4其中一数值，X为卤素。该硅前体具有Si-H键，该Si-H键比Si-X键要弱。该氮自由基前体实质不含氧。该氮自由基前体是于该沉积腔室外部产生。该硅前体与该氮自由基前体反应而形成氮化硅基介电层。
另一实施例提供一种沉积碳硅基介电层的方法。该方法包括引导一有机硅前体与一惰性气体自由基前体至一沉积腔室中。该有机硅前体具有一选自于由C-Si-H键和C-Si-Si键所构成的群组中的键。该惰性气体自由基前体实质不含氧。该惰性气体自由基前体是在沉积腔室外部所产生。该有机硅前体与该惰性气体自由基前体反应，而形成碳硅基介电层。
本发明的上述及其它实施例且伴随其优点与特征将参考附图与以下内容进一步详细说明如下。然而，应了解到，本发明并不仅限于本文中所显示的确切配置方式与手段。
附图说明
可参考附图与说明书其它部份的内容来进一步了解本发明的本质及优点，并且尽可能地在数个附图中使用相似的组件符号来代表相似的组件。在某些范例中，伴随组件符号而接续于连字号之后的下标符号则是代表多个类似组件的其中一个组件。当一组件符号未注明有下标符号时，则该组件符号代表所有的此类相似组件。
图1是一流程图，其显示根据本发明在一基板上形成氮化硅基介电层的示范性方法。
图2是一流程图，其显示根据本发明在一基板上形成碳硅基介电层的示范性方法。
图3是根据本发明的示范性工艺系统的概要剖面图。
具体实施方式
本发明有关于形成氮化硅基介电层或碳硅基介电层的方法。在一实施例中，该些方法使用远程等离子体系统(RPS)来产生含氮自由基的前体及/或惰性气体自由基前体，以在低工艺温度(例如，约100℃或更低温)下与一有机硅前体及/或硅前体反应，以形成氮化硅基介电层或碳硅基介电层。用来形成氮化硅基介电层的硅前体具有N-Si-H键、N-Si-Si键及/或Si-H键。用来形成碳硅基介电层的有机硅前体具有C-Si-H键及/或C-Si-Si键。具有弱及/或不稳定的Si-H或Si-Si键结，可形成自由基硅(radical Si)，而能与氮自由基(radical nitrogen)或碳自由基(radical carbon)反应形成Si-N或Si-C键，而形成氮化硅基介电层或碳硅基介电层。此外，含氮自由基前体及/或惰性气体自由基前体可实质不含氧，该些方法可依期望地形成氮化硅基或碳硅基介电层。
图1是一流程图，其显示根据本发明在一基板上形成氮化硅基介电层的示范性方法。该示范性方法100包括数个未详尽列出的步骤，亦可在该方法中添加额外的步骤(未显示)。已知技艺者将能理解到尚有多种其它变化、修饰与替代方面。在实施例中，方法100可包括引导一硅前体与一氮自由基前体至一沉积腔室中，其中该硅前体具有选自于由N-Si-H、N-Si-Si及Si-H所构成的群组中的一键，该氮自由基前体实质不含氧元素，并且该氮自由基前体是在沉积腔室外部形成(工艺步骤110)。该硅前体与该氮自由基前体在沉积腔室中反应，而生成一含硅且含氮介电层(工艺步骤120)。该氮化硅基介电层可例如是氮化硅层或氮氧化硅层。在实施例中，一硅前体与一氮自由基前体在一沉积腔室内反应，其中该硅前体具有通式SiHnX4-n，其中n是1～4的其中一数值，X为卤素，并且该硅前体具有Si-H键，该Si-H键比Si-X键要弱。
该硅前体具有选自于由N-Si-H、N-Si-Si及Si-H所构成的群组中的一键。例如，该硅前体可为(甲)硅烷(silane)、线性聚硅烷(如，二硅烷(disilane)、三硅烷(trisilane)以及更高阶的类似物)、环状聚硅烷类(例如，环戊硅烷(cyclopentasilane)及梯形聚硅烷(ladder polysilane))、二胺基硅烷类(diaminosilanes，其中R1与R2为烷基，例如甲基、乙基及更高阶类似物及/或氢)、三硅烷基胺类(trisilylamines，其中R为烷基，例如甲基、乙基及更高阶类似物及/或氢)、三甲硅烷基胺(N(SiH3)3)。
Figure BPA00001346888300041
在实施例中，在将硅前体引入沉积腔室内之前或引入沉积腔室的过程中，该硅前体可与一载气混合。载气可以是一非反应性气体，其不会干扰氮化硅层或氮氧化硅层的形成。载气的范例包括氦、氖、氢及其它类似气体。举例而言，借着将气态或液态硅化合物与氦气混合以将硅前体导入沉积腔室中的方式，是使流速约600至约2400sccm的氦气通过室温的硅前体，以提供流量约800mgm至约1600mgm的前体至沉积腔室中。
可在沉积腔室外部生成该氮自由基前体。例如，可在一远程等离子体生成系统(RPS)中产生该氮自由基前体，该远程等离子体生成系统借着将一较稳定的起始材料暴露于等离子体下来产生反应性物种。例如，起始材料可以是含有氨分子(NH3)及/或氮气(N2)的混合物。将该起始材料暴露于来自RPS的等离子体下，造成一部份的氨分子分解成N自由基、NH自由基及/或NH2自由基的高反应性物种，这些高反应性物种能在介于约-10℃至约100℃之间的温度下依照期望地置换掉硅前体中的Si-Si键及/或Si-H键，而在基板表面上形成一流动性介电质。由于该氮自由基前体实质不含氧，因此该方法能依期望地形成氮化硅基介电层。在实施例中，该氮前体是NH3，而非NOX。
氮自由基前体可以是例如，N、NH及/或NH2，以及其它氮自由基前体及/或该些前体的组合。N自由基、NH自由基及/或NH2自由基是反应性的，故会攻击Si-H及/或Si-Si这些不稳定且弱的键结。N自由基、NH自由基及/或NH2自由基随后与硅自由基键结而形成Si-N、Si-NH及/或Si-NH2键，这些键比Si-H和Si-Si键更加稳定。借着形成Si-N、Si-NH及/或Si-NH2键，可如期望地在基板上沉积氮化硅基层或氮氧化硅基层。在实施例中，惰性气体自由基前体，例如氩(Ar)、氪(Kr)及/或氙(Xe)，可引入沉积腔室中以轰击Si-H及/或Si-Si键，使Si-H及/或Si-Si键断裂并且形成硅自由基。硅自由基可与N、NH及/或NH2反应，而形成Si-N、Si-NH及/或Si-NH2键。因此，该惰性气体自由基前体能依期望地帮助该硅前体和该含氮自由基前体在基板上沉积形成氮化硅层或氮氧化硅层。
在实施例中，方法100无需在任何含氧环境中进行退火工艺以将氮化硅基膜转化成氧化硅基膜。举例而言，方法100不需要可将氮化硅基膜转换成氧化硅基膜的蒸气退火工艺。借着免于使用含氧退火工艺，可依期望地达成氮化硅基膜。
图2的流程图显示根据本发明在一基板上形成碳硅基(silicon carbon based)介电层的示例性方法。示例性方法200包含未详尽列出的多个步骤，亦可在该方法中增加多个额外步骤(未显示)。该领域中具有通常知识者能理解尚有许多变化、修饰及替代方面。在实施例中，方法200包括引导一有机硅前体及一惰性气体自由基前体至一沉积腔室中，其中该有机硅前体具有选自于由C-Si-H及C-Si-Si所构成的群组中的一键，该惰性气体自由基前体实质不含氧，并且该惰性气体自由基前体是在沉积腔室外部所产生(步骤210)。在实施例中，惰性气体自由基前体不具备氧基团。该有机硅前体与该惰性气体自由基前体在沉积腔室中反应而形成一碳硅基介电层(步骤220)。举例而言，该碳硅基介电层可以是碳化硅(SiC)层、碳氧化硅(SiOC)层或氮碳化硅(SiCN)层。
该有机硅前体具有选自于由C-Si-H及C-Si-Si所构成的群组中的一键。例如，用来形成碳化硅(SiC)膜的有机硅前体可以是烷基硅烷类(alkylsilanes，其中R是烷基，例如，甲基、乙基及更高阶类似物及/或氢)、桥连烷基硅烷(bridged alkylsilanes，其中R是烷基，例如，甲基、乙基及更高阶类似物及/或氢)、环状烷基硅烷(cyclic alkysilanes，其中R是烷基，例如，甲基、乙基及更高阶类似物及/或氢)及/或环状烷基二硅烷(cyclic alkyldisilanes，其中R1和R2是烷基，例如，甲基、乙基及更高阶类似物)。对于形成碳氧化硅(SiOC)膜的实施例，该有机硅前体可为，例如，线性聚烷氧硅烷(linear polyalkoxysilanes，其中R是烷氧基，例如，甲氧基、乙氧基及更高阶的类似物)、环状烷氧基二硅烷(cyclic alkoxydisilanes，其中R1和R2是烷氧基，例如，甲氧基、乙氧基及更高阶类似物)、烷氧基硅烷(alkysilanes，其中R是烷氧基，例如，甲氧基、乙氧基及更高阶类似物)、烷氧基二硅烷(alkoxydisilanes，其中R1和R2是烷氧基，例如，甲氧基、乙氧基及更高阶类似物)及/或聚胺基硅烷(polyaminosilanes，其中R是烷氧基，例如，甲氧基、乙氧基及更高阶类似物)。对于形成氮碳化硅(SiCN)膜的实施例，该有机硅前体可为，例如，环状烷胺基硅烷(cyclic alkylaminosilanes，其中R是烷基，例如甲基、乙基及更高阶类似物及/或氢)、三胺基硅烷(triaminosilanes，其中R1和R2是烷基，例如甲基、乙基及更高阶类似物)、二胺基硅烷(diaminosilanes，其中R1和R2是烷基，例如甲基、乙基及更高阶类似物)及/或三硅烷基胺(trisilylamines，其中R是烷基，例如甲基、乙基及更高阶类似物)。
用于SiC膜：
Figure BPA00001346888300071
用于SiOC膜：
Figure BPA00001346888300072
Figure BPA00001346888300081
用于SiCN膜：
Figure BPA00001346888300082
在实施例中，在该有机硅前体引入沉积腔室内之前或引入过程中，该有机硅前体可与一载气混合。载气可为一非反应性气体，其实质上不干扰碳硅基介电层的形成。载气的实例可包括氦、氖、氩与氢，或其它气体。例如，借着将气态或液态有机硅化合物与氦气混合以将有机硅前体导入沉积腔室中的方式，是使流速约600至约2400sccm的氦气通过室温的有机硅前体，以提供流量约800mgm至约1600mgm的前体至沉积腔室中。
该惰性气体自由基前体可在沉积腔室外部产生。例如，该惰性气体自由基前体可在一远程等离子体生成系统(RPS)中产生，该远程等离子体生成系统借着使较稳定的起始材料暴露于等离子体来产生轰击物种。举例而言，该起始材料可为包含Ne、Ar、Kr及/或Xe的气体。将该起始材料暴露于来自RPS的等离子体中造成一部份的惰性气体分解成Ne、Ar、Kr及/或Xe自由基，轰击物种能依期望地轰击有机硅前体中的Si-Si及/或Si-H键，而形成能彼此反应的C-Si自由基。在实施例中，C-Si自由基能在介于约-10℃至约100℃之间的温度下彼此反应，而在基板表面上形成流动性的介电材料。由于该惰性气体自由基前体实质不含氧元素，该方法能依期望地形成碳硅基介电层。
该惰性气体自由基前体可为，例如，Ne、Ar、Kr及/或Xe，以及其它惰性气体自由基前体和该些前体的组合。Ne、Ar、Kr及/或Xe自由基被引入沉积腔室中，以轰击Si-H及/或Si-Si键，而打断Si-H及/或Si-Si键并且形成C-Si自由基。该些气体前体的C-Si自由基可彼此反应，而形成C-Si-H及/或C-Si-Si键。因此，该惰性气体自由基前体能依期望地打断Si-H及/或Si-Si键，使得该有机硅前体自由基能够互相反应，而在基板上形成SiC层、SiOC层或SiCN层。
图3是本发明的示范性工艺系统的概要剖面图。在图3中，系统300包含一沉积腔室301，在该沉积腔室中，前体彼此进行化学性反应并且在基板302上沉积一流动性介电膜。基板302(例如，200mm、300mm、400mm等直径的半导体基板晶圆)可置于一可旋转基板基座304上，该可旋转基板基座304能垂直移动以定位基板302，使基板接近或远离上方的前体分配系统306。基座304能以约1rpm至约2000rpm(例如，约10rpm至约120rpm)的转速来旋转基板302。基座304能垂直地移动基板302，使基板302与前体分配系统306的侧喷嘴308相距例如约0.5mm至约100mm的距离。
前体分配系统306包含数个放射状分布的侧喷嘴308，每个喷嘴具有两种不同长度的其中一种长度。在实施例中，该些侧喷嘴308可选用性地是绕着沉积腔室301的腔室壁呈环状分布的多个开口。该些前体流经这些开口而进入腔室301中。
前体分配系统306可包含圆锥状的顶部挡板310，该顶部挡板310与该基板基座304的中心同轴。流体通道312通过挡板310的中心以提供前体或载气，且其所提供的前体或载气与向下流经挡板310的外侧引导表面的前体具有不同组成。
挡板310的外侧表面可被导管314所围绕，其引导来自位于沉积腔室301上方的反应性物种生成系统(未显示)的反应性前体。导管314可为直圆管，且其一末端开口与挡板310的外侧表面耦接，并且另一末端则与该反应性物种生成系统(未标明)耦接。该反应性物种生成系统可为一远程等离子体生成系统(RPS)，其借着使一较稳定起始材料暴露于等离子体来产生反应性物种。由于该反应性物种生成系统中所产生的反应性物种即使在室温下也通常对于其它沉积前体具有高反应性，因此该些反应性物种在与其它沉积前体混合之前，可在一隔离的气体混合物下导管314中输送该些反应性物种并且经由挡板310将之分散至反应腔室301内。
在实施例中，系统300亦可包含RF线圈(未显示)，其缠绕在沉积腔室301的圆顶316周围。这些线圈能在沉积腔室301中创造出感应耦合等离子体，以其促进该些反应性物种前体和其它前体的反应性，以在基板上沉积该流动性介电膜。举例而言，利用RF线圈使经由挡板310引入腔室301的含反应性氮自由基气流以及从通道312及/或一或多个侧喷嘴308引入的有机硅前体在基板302上方反应。在等离子体中，该氮自由基和该有机硅前体即使在低温下也可快速反应，而在基板302的表面上形成一流动性介电膜。
可利用基座304使基板表面本身旋转，以达到期望的沉积膜均匀度。旋转平面可平行于晶圆沉积表面的平面，或者两个平面可能部份不对准。当该些平面不对准时，基板302的旋转可能产生摆动，而该摆动可能在沉积表面上方的空间中产生流体涡流(fluid turbulence)。在某些情况中，此涡流亦可能促进沉积在基板表面上的介电膜的均匀度。基座304亦可包含多个凹槽及/或其它结构，该些凹槽及/或其它结构产生真空吸引(vacuum chuck)以当基座移动时将晶圆持定在基座上。腔室301中的典型沉积压力是约0.05Torr至约200Torr的总腔室压力(例如，1Torr)，此压力可产生能将晶圆固持于定位的真空吸力。
可利用马达318来驱动基座旋转，马达318设置在沉积腔室301下方并且可旋转地耦接至轴320，轴320支撑基座304。轴320可包含内部信道(未显示)用以将来自位在沉积腔室301下方的冷却/加热系统的冷却流体及/或电线携带至基座304。该些内部通道从基座304的中心延伸到基座304的周围，以为基板302提供均匀的冷却及/或加热。该些通道设计成当轴320及基板基座304旋转及/或移动时可进行操作。例如，冷却系统可在基座304旋转且沉积介电膜的过程中运作，以保持基板302的温度约100℃或更低。
系统300可包含辐射系统322设置在圆顶316上方。辐射系统322的灯(未显示)能照射基板302，以烘烤或退火该位在基板302上的沉积膜。可在沉积过程中启动该些灯，以促进该些薄膜前体或沉积膜中的反应。至少圆顶316的顶部部份是由能让一部份该些灯发出的光线通过的半透明材料所制成。
当文中提供一数值范围时，需了解到，除非文中内容另有明确指示，否则介于该范围的上下限值之间且计算至较小限值单位的十分的一位的每个中间值亦属于本案具体揭示内容。并且介于文中所述任何数值或所述范围内任一中间值与任何另一所述数值或该范围中另一中间值之间的较小范围，亦属于本发明范畴。这些较小范围的上下限值可各自独立地包含在该范围中或排除在该范围外，并且该些包含其中一个限值、两限值皆不包含或两限值皆包含的各个较小范围(若所述范围有特别载明排除任一限值的话)也属于本发明范畴。当所述范围包含其中一个或两个限值时，则将其中任一限值或两限值排除的该些范围亦为本发明所涵盖。
关于此处与权利要求书中所使用的单数用语「一」、「一个」以及「该」，除非文中另有明确指示，否则该些单数用语亦包含数个的意。因此，举例而言，当提及「一工艺」时，可能包含数个此类工艺，并且当述及「该喷嘴」时，可能包括一或多个喷嘴及所属技术领域中已知技艺者已知的等效物，以及诸如此类者。
此外，本案说明书及权利要求书中使用的「包括」、「包含」、「含有」、「含」及「具有」等用语是意欲说明文中所述特征、整数、构件或步骤的存在，但不排除可能存在或增加一或多个其它特征、整数、构件、步骤或基团。

Claims (24)

1.一种沉积一氮化硅基介电层的方法，该方法包括以下步骤：
引导一硅前体及一氮自由基前体至一沉积腔室中，其中该硅前体具有选自于由N-Si-H键、N-Si-Si键及Si-Si-H键所构成的群组中的一键，该氮自由基前体实质不含氧，并且该氮自由基前体是在该沉积腔室外部产生；以及
反应该硅前体及该氮自由基前体，以形成该氮化硅基介电层。
2.如权利要求1所述的方法，其中该硅前体是选自由以下各者所构成的群组：线性聚硅烷(linear polysilanes)、二胺基硅烷(diaminosilanes)、三硅烷基胺(trisilylamines)、双(二乙胺基)硅烷(bis(diethylamino)silane)、环戊硅烷(cyclopentasilane)、N(SiH3)3及/或梯形聚硅烷(ladder polysilanes)。
3.如权利要求1所述的方法，其中该氮自由基前体是选自由以下各者所构成的群组：N、NH和NH2。
4.如权利要求1所述的方法，更包括：一惰性气体自由基前体。
5.如权利要求4所述的方法，其中该惰性气体自由基前体是自由基氩(Ar)。
6.如权利要求1所述的方法，其中反应该硅前体和该氮自由基前体的步骤具有介于约-10℃至约100℃之间的一工艺温度。
7.如权利要求1所述的方法，其中该氮化硅基介电层是一氮化硅层。
8.如权利要求1所述的方法，更包括以下步骤：在一远程工艺系统中产生该氮自由基前体。
9.一种沉积一氮化硅基介电层的方法，该方法包括以下步骤：
引导一硅前体及一氮自由基前体至一沉积腔室中，其中该硅前体具有式SiHnX4-n，n为1～4中的一数字，X是卤素，该硅前体具有一Si-H键，该Si-H键比Si-X键要弱，该氮自由基前体实质不含氧，并且该氮自由基前体是在该沉积腔室外部产生；以及
反应该硅前体及该氮自由基前体，以形成该氮化硅基介电层。
10.如权利要求9所述的方法，其中该硅前体是硅烷。
11.如权利要求9所述的方法，其中该氮自由基前体选自由以下各者所构成的群组：N、NH及NH2。
12.如权利要求9所述的方法，更包括：一惰性气体自由基前体。
13.如权利要求12所述的方法，其中该惰性气体自由基前体是自由基氩(Ar)。
14.如权利要求9所述的方法，其中反应该硅前体和该氮自由基前体的步骤具有介于约-10℃至约100℃之间的一工艺温度。
15.如权利要求9所述的方法，其中该氮化硅基介电层是一氮化硅层。
16.如权利要求9所述的方法，更包括以下步骤：在一远程工艺系统中产生该氮自由基前体。
17.一种沉积一碳硅基介电层的方法，该方法包括以下步骤：
引导一有机硅前体和一惰性气体自由基前体至一沉积腔室中，其中该有机硅前体具有选自于由C-Si-H键和C-Si-Si键所构成的群组中的一键，该惰性气体自由基前体实质不含氧，且该惰性气体自由基前体是在该沉积腔室外部产生；以及
反应该有机硅前体及该惰性气体自由基前体，以形成该碳硅基介电层。
18.如权利要求17所述的方法，其中提供该有机硅前体用以形成一碳化硅(SiC)层，且其选自由以下各者所构成的群组：烷基硅烷(alkylsilanes)、桥连烷基硅烷(bridged alkylsilanes)、环状烷基硅烷(cyclic alkysilanes)及环状烷基二硅烷(cyclic alkyldisilanes)。
19.如权利要求17所述的方法，其中提供该有机硅前体用以形成一碳氧化硅(SiOC)层，且其选自由以下各者所构成的群组：线性聚烷基硅烷(linear polyalkylsilanes)、环状烷氧基二硅烷(cyclic alkoxydisilanes)、烷氧基硅烷(alkoxysilanes)、烷氧基二硅烷(alkoxydisilanes)及聚胺基硅烷(polyaminosilanes)。
20.如权利要求17所述的方法，其中提供该有机硅前体用以形成一碳氮化硅(SiCN)层，且其选自由以下各者所构成的群组：环状胺基硅烷(cyclic aminosilanes)、三胺基硅烷(triaminosilanes)、二胺基硅烷(diaminosilanes)及/或三硅烷基胺(trisilylamines)。
21.如权利要求17所述的方法，其中该惰性气体自由基前体是自由基氩(Ar)。
22.如权利要求17所述的方法，其中反应该有机硅前体和该惰性气体自由基前体的步骤具有介于约-10℃至约100℃之间的一工艺温度。
23.如权利要求17所述的方法，其中该碳化硅基介电层是一碳化硅层。
24.如权利要求17所述的方法，更包括以下步骤：在一远程工艺系统中产生该惰性气体自由基前体。
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