CN102185217A - Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp - Google Patents
Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp Download PDFInfo
- Publication number
- CN102185217A CN102185217A CN2011100524624A CN201110052462A CN102185217A CN 102185217 A CN102185217 A CN 102185217A CN 2011100524624 A CN2011100524624 A CN 2011100524624A CN 201110052462 A CN201110052462 A CN 201110052462A CN 102185217 A CN102185217 A CN 102185217A
- Authority
- CN
- China
- Prior art keywords
- power supply
- radio
- frequency power
- interface
- minus plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 9
- 230000008021 deposition Effects 0.000 title claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- 230000007246 mechanism Effects 0.000 claims abstract description 34
- 239000010409 thin film Substances 0.000 claims description 13
- 238000000151 deposition Methods 0.000 abstract description 23
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 12
- 210000001503 joint Anatomy 0.000 abstract description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000033001 locomotion Effects 0.000 description 1
- 238000003032 molecular docking Methods 0.000 description 1
Images
Abstract
The invention relates to a connecting member and method of a radio-frequency power supply for depositing an amorphous silicon film battery, belonging to the technical field of solar batteries. An interface fixing plate of a radio-frequency power supply interface is provided with a spring mechanism; the spring mechanism is connected with a movable plate with a positioning guide sleeve; a guide post is inserted into the positioning guide sleeve to form a guide positioning mechanism; the radio-frequency power supply interface is in butt joint with a negative plate interface in a positioning way through the guide positioning mechanism; and the spring mechanism is used for adjusting the butt joint deviation between the radio-frequency power supply interface and the negative plate interface. By adopting the connecting member, accurate positioning of the negative plate interface and the radio-frequency power supply interface can be realized, the butt joint between the negative plate interface and the radio-frequency power supply interface can be realized rapidly and stably, the joint butt deviation between the negative plate interface and the radio-frequency power supply interface can be adjusted by adjusting a deviation component, and the butt joint accuracy is further ensured.
Description
Technical field
The present invention relates to a kind of radio-frequency power supply connecting elements and method that is used for the deposition of amorphous silicon films battery, belong to technical field of solar cells.
Background technology
In the amorphous silicon thin-film solar cell production technology, need add a radio-frequency power supply to minus plate during the deposited amorphous silicon layer, under the radio-frequency power supply effect, in vacuum chamber, form plasma, evenly discharge, realize low temperature depositing, as the patent No. 200820152147.2 " two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition anchor clamps " and all disclosed chemical vapour deposition (CVD) anchor clamps of the patent No. 200610074522.1 " chemical vapour deposition (CVD) anchor clamps ", minus plate is installed on the deposition clamp, deposition clamp can move, the convenient substrate and the good substrate of deposition of taking placed.But anchor clamps for the primary depositing multi-disc, need a plurality of minus plates and radio-frequency power supply, form minus plate group and corresponding external radio-frequency power supply group, because anchor clamps are movable, external radio-frequency power supply to be connected with minus plate during each the deposition, radio-frequency power supply and minus plate will be separated after the deposition.Prior art has by manually or certainly being dynamically connected, wherein manually connecting is after deposition clamp pushes the vacuum chamber fixed position, manually the minus plate interface is inserted in the corresponding radio-frequency power supply interface, the internal thread of interface lock jack panel and the external screw thread of interface clamping screw are tightened, the interface lock jack panel drives the tension axle sleeve simultaneously makes minus plate interface cable line be connected with the radio-frequency power supply interface, bindiny mechanism for the primary depositing multi-disc, needing each interface all to use manually connects, inefficiency is not easy to realize the production automation.Therefore how rapid and reliable butt joint of external radio-frequency power supply group and minus plate group become the present problem that needs solution.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, solve accurately location, with the radio-frequency power supply interface fast, the technical problem of firmly docking with the minus plate interface, a kind of radio-frequency power supply bindiny mechanism of rapid and reliable chemical vapour deposition (CVD) anchor clamps is provided.
In order to realize above task, the technical solution used in the present invention is: a kind of connecting elements that is used for amorphous silicon membrane cell deposition anchor clamps radio-frequency power supply is provided, comprise the minus plate interface fixed head that is installed on the deposition clamp and be contained in the interior radio-frequency power supply interface fixed head of vacuum chamber wall, on the radio-frequency power supply interface fixed head spring mechanism is housed, this spring mechanism is connected with the portable plate of band location guide pin bushing, be inserted with guide pillar in the guide pin bushing of described location and form guide-localization mechanism, the radio-frequency power supply interface docks by guide-localization mechanism location with the minus plate interface, and by the dock deviation of spring mechanism adjustment radio-frequency power supply interface with the minus plate interface.
A plurality of minus plate interfaces and a plurality of positioning guide column are housed on the minus plate interface fixed head.
A plurality of radio-frequency power supply interfaces and a plurality of location guide pin bushing are housed on the portable plate of connecting elements.
Guide pillar is installed on the minus plate interface fixed head.
Minus plate interface fixed head is contained in the afterbody of deposition clamp.
Minus plate interface and radio-frequency power supply interface all are connected with cable.
The present invention also provides a kind of method of attachment that is used for amorphous silicon membrane cell deposition anchor clamps radio-frequency power supply, minus plate is installed on the anchor clamps of deposition of amorphous silicon films battery, and radio-frequency power supply interface fixed head is contained in the chamber wall of vacuum chamber,
Radio-frequency power supply interface fixed head connects a portable plate by spring mechanism,
Radio-frequency power supply interface and location guide pin bushing are installed on portable plate,
Installing and locating guide pillar on minus plate interface fixed head,
Positioning guide column is plugged on guide-localization in the guide pin bushing, realizes that the minus plate interface docks with radio-frequency power supply interface location,
With the dock deviation of spring mechanism adjustment minus plate interface with the radio-frequency power supply interface.
The radio-frequency power supply interface is connected with cable, and the other end of this cable connects the introducing joint of radio-frequency power supply.
Minus plate interface stube cable line, the other end of this cable is connected with minus plate.
The invention has the beneficial effects as follows simple in structure, easy to operate, can not only realize that minus plate interface and radio-frequency power supply interface accurately locatees, and can fast, firmly realize minus plate interface and the butt joint of radio-frequency power supply interface, can also adjust the deviation of minus plate interface and the butt joint of radio-frequency power supply interface by adjusting the deviation parts, further guarantee the accuracy of butt joint.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is an A-A cutaway view among Fig. 1.
Fig. 3 is a radio-frequency power supply of the present invention bindiny mechanism mated condition schematic diagram.
Fig. 4 is the schematic diagram of embodiment 1.
Fig. 5 is the schematic diagram of embodiment 2.
Fig. 6 is the schematic diagram of embodiment 3.
Among Fig. 1 to Fig. 6: 1 is deposition clamp, and 2 is minus plate interface fixed head, and 3 is minus plate interface cable line, 4 is the minus plate interface, 5 is vacuum chamber, and 6 are radio-frequency power supply introducing joint, and 7 is radio-frequency power supply interface fixed head, 8 is portable plate, 9 is radio-frequency power supply interface cable line, and 10 is the radio-frequency power supply interface, and 11 is spring mechanism, 12 is guide pillar, and 13 is guide pin bushing.
Below in conjunction with accompanying drawing the present invention is described in detail.
Radio-frequency power supply interface fixed head is connected by spring mechanism with portable plate, the minus plate interface is fixedly mounted on the minus plate interface fixed head on the deposition clamp, the location guide pin bushing is housed on portable plate, the location guide pillar is housed on minus plate interface fixed head, guide pillar and guide pin bushing play the role of positioning, spring mechanism is adjusted target plate interface and radio-frequency power supply interface contraposition deviation, makes its accurately firmly butt joint.
Embodiment
Embodiment 1:
The connecting elements that is used for amorphous silicon membrane cell deposition anchor clamps radio-frequency power supply, comprise the minus plate interface fixed head that is installed on the deposition clamp and be contained in the interior radio-frequency power supply interface fixed head of vacuum chamber wall, on the radio-frequency power supply interface fixed head spring mechanism is housed, this spring mechanism is connected with the portable plate of band location guide pin bushing, be inserted with guide pillar in the guide pin bushing of location and form guide-localization mechanism, the radio-frequency power supply interface docks by guide-localization mechanism location with the minus plate interface, by the dock deviation of spring mechanism adjustment radio-frequency power supply interface with the minus plate interface.
See Fig. 4, present embodiment once can deposit 16 amorphous silicon battery substrates simultaneously, need 4 pairs of radio-frequency power supply interfaces 10 and minus plate interface 4,4 minus plate interfaces 4 and 1 guide pillar 12 are installed on minus plate interface fixed head 2, at portable plate 84 radio-frequency power supply interfaces 10 and 1 guide pin bushing 13 are installed, portable plate 8 is connected by 2 spring mechanisms 11 with radio-frequency power supply interface fixed head 7, can guarantee that the radio-frequency power supply interface 10 and the deviation of the decentraction of minus plate interface 4 are no more than in half scope of guide pillar 12 diameters.
Embodiment 2:
As shown in the figure, minus plate interface fixed head 2 is by welding or be bolted to the afterbody of deposition clamp 1, minus plate interface 4 is fixed on the minus plate interface fixed head 2, minus plate interface cable line 3 one ends are connected on the minus plate interface 4, the other end is connected on the minus plate, radio-frequency power supply interface fixed head 7 is by welding or being bolted in the vacuum chamber 5 chamber walls, portable plate 8 links to each other with radio-frequency power supply interface fixed head 7 by spring mechanism 11, radio-frequency power supply interface 10 is fixed on the portable plate 8 and minus plate interface 4 correspondence positions, radio-frequency power supply interface cable line 9 one ends link to each other with radio-frequency power supply interface 10, the other end is introduced joint 6 with radio-frequency power supply and is linked to each other, guide pillar 12 is fixed on the minus plate interface fixed head 2, guide pin bushing 13 is fixed on the portable plate 8, guide pillar 12 drives 2 motions of minus plate interface fixed head and inserts realization guide-localization in the guide pin bushing 13 when deposition clamp 1 pushes vacuum chamber 5, radio-frequency power supply interface 10 is docked with minus plate interface 4, when deviation takes place during with minus plate interface 4 location in radio-frequency power supply interface 10, by spring mechanism 11 make portable plate 8 can about allow the skew of certain limit to adjust radio-frequency power supply interface 10 and minus plate interface 4 contraposition deviations up and down.
See Fig. 5, present embodiment once can deposit 32 amorphous silicon battery substrates simultaneously, need 8 pairs of radio-frequency power supply interfaces 10 and minus plate interface 4,8 minus plate interfaces 4 and 2 guide pillars 12 are installed on minus plate interface fixed head 2, at portable plate 88 radio-frequency power supply interfaces 10 and 2 guide pin bushings 13 are installed, portable plate 8 is connected by 4 spring mechanisms 11 with radio-frequency power supply interface fixed head 7, can guarantee that the radio-frequency power supply interface 10 and the deviation of the decentraction of minus plate interface 4 are no more than in half scope of guide pillar 12 diameters.
Embodiment 3:
Execution mode does not repeat them here with embodiment 2.See Fig. 6, present embodiment once can deposit 48 amorphous silicon battery substrates simultaneously, need 12 pairs of radio-frequency power supply interfaces 10 and minus plate interface 4,12 minus plate interfaces 4 and 2 guide pillars 12 are installed on minus plate interface fixed head 2, at portable plate 8 12 radio-frequency power supply interfaces 10 and 2 guide pin bushings 13 are installed, portable plate 8 is connected by 9 spring mechanisms 11 with radio-frequency power supply interface fixed head 7, can guarantee that the radio-frequency power supply interface 10 and the deviation of the decentraction of minus plate interface 4 are no more than in half scope of guide pillar 12 diameters.
Claims (10)
1. connecting elements that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply, comprise the minus plate interface fixed head that is installed on the deposition clamp and be contained in the interior radio-frequency power supply interface fixed head of vacuum chamber wall, it is characterized in that on the described radio-frequency power supply interface fixed head spring mechanism being housed, this spring mechanism is connected with the portable plate of band location guide pin bushing, be inserted with guide pillar in the guide pin bushing of described location and form guide-localization mechanism, the radio-frequency power supply interface docks by guide-localization mechanism location with the minus plate interface, and by the dock deviation of spring mechanism adjustment radio-frequency power supply interface with the minus plate interface.
2. the connecting elements that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply according to claim 1 is characterized in that on the described minus plate interface fixed head a plurality of minus plate interfaces and a plurality of positioning guide column being housed.
3. the connecting elements that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply according to claim 1 is characterized in that on the portable plate of described connecting elements a plurality of radio-frequency power supply interfaces and a plurality of location guide pin bushing being housed.
4. the connecting elements that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply according to claim 1 is characterized in that described guide pillar is installed on the minus plate interface fixed head.
5. the connecting elements that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply according to claim 1 is characterized in that described minus plate interface fixed head is contained in the afterbody of deposition clamp.
6. the connecting elements that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply according to claim 1 is characterized in that described minus plate interface and radio-frequency power supply interface all are connected with cable.
7. method of attachment that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply is installed in minus plate on the anchor clamps of deposition silicon-base thin-film battery, and radio-frequency power supply interface fixed head is contained in the chamber wall of vacuum chamber, it is characterized in that
Radio-frequency power supply interface and location guide pin bushing are installed on portable plate,
Installing and locating guide pillar on minus plate interface fixed head,
Positioning guide column is plugged on guide-localization in the guide pin bushing, realizes that the minus plate interface docks with radio-frequency power supply interface location,
With the dock deviation of spring mechanism adjustment minus plate interface with the radio-frequency power supply interface.
8. the method for attachment that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply according to claim 7 is characterized in that described radio-frequency power supply interface is connected with cable, and the other end of this cable connects the introducing joint of radio-frequency power supply.
9. the method for attachment that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply according to claim 7 is characterized in that described minus plate interface fixed head is contained in the afterbody of deposition clamp.
10. the method for attachment that is used for silicon-base thin-film battery deposition clamp radio-frequency power supply according to claim 7 is characterized in that described minus plate interface stube cable line, and the other end of this cable is connected with minus plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110052462 CN102185217B (en) | 2011-03-04 | 2011-03-04 | Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110052462 CN102185217B (en) | 2011-03-04 | 2011-03-04 | Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102185217A true CN102185217A (en) | 2011-09-14 |
CN102185217B CN102185217B (en) | 2013-02-06 |
Family
ID=44571323
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201110052462 Expired - Fee Related CN102185217B (en) | 2011-03-04 | 2011-03-04 | Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102185217B (en) |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
US20020090467A1 (en) * | 1996-03-29 | 2002-07-11 | Applied Materials, Inc. | Method and apparatus for forming a borophosphosilicate film |
US20030150562A1 (en) * | 2000-09-12 | 2003-08-14 | Quon Bill H. | Apparatus and method to control the uniformity of plasma by reducing radial loss |
US20050241768A1 (en) * | 2002-10-01 | 2005-11-03 | Mitsubishi Heavy Industries, Ltd | High frequency plasma generator and high frequency plasma generating method |
CN101187014A (en) * | 2007-11-19 | 2008-05-28 | 南开大学 | Large area VHF-PECVD reaction chamber electrode capable of obtaining even electric field |
CN101187016A (en) * | 2007-11-19 | 2008-05-28 | 南开大学 | Large area VHF-PECVD reaction chamber back feed-in type parallel plate electrode capable of obtaining even electric field |
CN101319310A (en) * | 2008-07-02 | 2008-12-10 | 奚建平 | Plasma chemical vapor deposition vacuum apparatus for photovoltaic assembly scale manufacture |
CN101339967A (en) * | 2008-08-19 | 2009-01-07 | 上海曙海太阳能有限公司 | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment |
CN201183822Y (en) * | 2008-03-14 | 2009-01-21 | 福建钧石能源有限公司 | Thin film deposition apparatus |
CN101471395A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Reaction chamber structure of solar battery edge-engraving machine |
CN201288217Y (en) * | 2008-09-28 | 2009-08-12 | 奚建平 | Plasma chemical vapor deposition vacuum apparatus for photovoltaic assembly scale manufacture |
CN201326029Y (en) * | 2008-12-30 | 2009-10-14 | 吉林庆达新能源电力股份有限公司 | Electrode gap adjusting device |
CN201570509U (en) * | 2009-12-11 | 2010-09-01 | 中国南玻集团股份有限公司 | Plasma edging clamp for solar battery |
CN201593063U (en) * | 2009-11-16 | 2010-09-29 | 吉林庆达新能源电力股份有限公司 | Battery plate hanger box of plasma chemical vapor deposition device |
CN101882647A (en) * | 2010-06-11 | 2010-11-10 | 深圳市创益科技发展有限公司 | Movable holder for silicon-based film solar cells |
CN101882646A (en) * | 2010-06-11 | 2010-11-10 | 深圳市创益科技发展有限公司 | Deposition clamp of film solar cell |
-
2011
- 2011-03-04 CN CN 201110052462 patent/CN102185217B/en not_active Expired - Fee Related
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
US20020090467A1 (en) * | 1996-03-29 | 2002-07-11 | Applied Materials, Inc. | Method and apparatus for forming a borophosphosilicate film |
US20030150562A1 (en) * | 2000-09-12 | 2003-08-14 | Quon Bill H. | Apparatus and method to control the uniformity of plasma by reducing radial loss |
US20050241768A1 (en) * | 2002-10-01 | 2005-11-03 | Mitsubishi Heavy Industries, Ltd | High frequency plasma generator and high frequency plasma generating method |
CN101187014A (en) * | 2007-11-19 | 2008-05-28 | 南开大学 | Large area VHF-PECVD reaction chamber electrode capable of obtaining even electric field |
CN101187016A (en) * | 2007-11-19 | 2008-05-28 | 南开大学 | Large area VHF-PECVD reaction chamber back feed-in type parallel plate electrode capable of obtaining even electric field |
CN101471395A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | Reaction chamber structure of solar battery edge-engraving machine |
CN201183822Y (en) * | 2008-03-14 | 2009-01-21 | 福建钧石能源有限公司 | Thin film deposition apparatus |
CN101319310A (en) * | 2008-07-02 | 2008-12-10 | 奚建平 | Plasma chemical vapor deposition vacuum apparatus for photovoltaic assembly scale manufacture |
CN101339967A (en) * | 2008-08-19 | 2009-01-07 | 上海曙海太阳能有限公司 | Two-chamber alternative amorphous silicon photovoltaic film chemical vapour deposition equipment |
CN201288217Y (en) * | 2008-09-28 | 2009-08-12 | 奚建平 | Plasma chemical vapor deposition vacuum apparatus for photovoltaic assembly scale manufacture |
CN201326029Y (en) * | 2008-12-30 | 2009-10-14 | 吉林庆达新能源电力股份有限公司 | Electrode gap adjusting device |
CN201593063U (en) * | 2009-11-16 | 2010-09-29 | 吉林庆达新能源电力股份有限公司 | Battery plate hanger box of plasma chemical vapor deposition device |
CN201570509U (en) * | 2009-12-11 | 2010-09-01 | 中国南玻集团股份有限公司 | Plasma edging clamp for solar battery |
CN101882647A (en) * | 2010-06-11 | 2010-11-10 | 深圳市创益科技发展有限公司 | Movable holder for silicon-based film solar cells |
CN101882646A (en) * | 2010-06-11 | 2010-11-10 | 深圳市创益科技发展有限公司 | Deposition clamp of film solar cell |
Also Published As
Publication number | Publication date |
---|---|
CN102185217B (en) | 2013-02-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008093113A3 (en) | A method of manufacturing an electrode array for photovoltaic electrochemical cell arrays | |
WO2012008743A3 (en) | Folding apparatus for an electrode assembly | |
CN112875404B (en) | Adhesive tape rubberizing, mechanism of rectifying | |
WO2023072218A1 (en) | Device for assembling cell into housing, battery cell assembling device, and cell assembling method | |
CN102185217B (en) | Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp | |
CN201326029Y (en) | Electrode gap adjusting device | |
CN201990724U (en) | Radio-frequency power supply connecting mechanism for chemical vapor deposition equipment | |
CN202323012U (en) | Heating plate and vacuum manipulator positioning device | |
CN202072762U (en) | Graphite boat | |
CN102220567A (en) | Flat PECVD (plasma-enhanced chemical vapor deposition) silicon nitride coating system | |
CN204088271U (en) | A kind of photovoltaic one-sheet test device | |
CN104117850A (en) | Automatic clock movement assembly line | |
CN103681423A (en) | 90-degree rotating mechanism for transmitting silicon wafer baskets | |
CN109360867A (en) | A kind of photovoltaic cell string feed device | |
CN202717846U (en) | Special tool for installing wafer bracket | |
CN102747341B (en) | Special tool for installing wafer bracket and method for installing special tool | |
CN207587712U (en) | A kind of fixation kit of transmission mechanism | |
CN203746810U (en) | Rotating mechanism for steering silicon chip basket | |
CN202549803U (en) | Silicon wafer transfer system based on image detection and positioning | |
CN201632430U (en) | Full-automatic cell position calibrating device | |
CN202423363U (en) | Attenuation-reducing treatment box for base plate of amorphous silicon solar cell | |
CN214848753U (en) | Electrode uniform paste coating equipment for lead-acid storage battery | |
CN220646760U (en) | Magnetic fluid sealing device for CIGS coating | |
CN203284462U (en) | Air supply system for plasma chemical vapor deposition coating equipment | |
CN202297767U (en) | Gas inlet structure of flat plate type plasma enhanced chemical vapor deposition (PECVD) equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130206 |
|
CF01 | Termination of patent right due to non-payment of annual fee |