CN102207676A - Method and system for manufacturing semiconductor device by using photoetching technology - Google Patents
Method and system for manufacturing semiconductor device by using photoetching technology Download PDFInfo
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- CN102207676A CN102207676A CN 201010156442 CN201010156442A CN102207676A CN 102207676 A CN102207676 A CN 102207676A CN 201010156442 CN201010156442 CN 201010156442 CN 201010156442 A CN201010156442 A CN 201010156442A CN 102207676 A CN102207676 A CN 102207676A
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Abstract
The invention realizes the improvement of the contrast ratio of an alignment target in a photoetching double-patterning process, and provides a system and method for manufacturing a semiconductor device by using a photoetching technology and manufactured products, relating to the photoetching double-patterning process in which dye is added to a first or a second photoetch pattern. The dye is used for detecting the position of the first photoetch pattern and directly aligning the second photoetch pattern with the first photoetch pattern. The dye can be fluorescent, luminescent, absorptive or reflective within a specific wavelength or given wavelength section. The wavelength can correspond to that of the alignment bundle. The detection of the first photoetch pattern is allowable with respect to the dye even if the dye is covered by a radiosensitive layer.
Description
Technical field
The present invention relates generally to photolithography, and relates more specifically to improve in photoengraving pattern metallization processes (such as double patterning technology) and aim at the mark.
Background technology
Lithographic equipment is a kind of required pattern to be applied on the substrate, normally the machine on the target of the substrate part.For example, lithographic equipment can be used in the manufacturing of integrated circuit (IC).In this case, the pattern that is called mask or mask alternatively can be formed device and be used to be created on circuit pattern to be formed on the individual layer of described IC.This design transfer can be arrived on the target part (for example, comprising a part of tube core, one or more tube core) on the substrate (for example, silicon wafer).Usually, the transfer of pattern is to be undertaken by pattern being imaged onto on radiation-sensitive materials (resist) layer that is provided on the substrate.Usually, independent substrate will comprise the adjacent target network partly that is formed pattern continuously.Known lithographic equipment comprises: so-called stepper, in described stepper, by exposing an entire pattern onto described target each the target part of radiation of partly coming up; And so-called scanner, in described scanner, scan described pattern, come each target part of radiation along the described substrate of parallel or antiparallel scanning direction with this direction simultaneously along assigned direction (" scanning " direction is also referred to as " y direction ") by radiation beam.Also can with by pattern impression (imprinting) is formed to the mode of substrate from pattern device with design transfer to substrate.
By using double patterning can increase the resolution of optical lithography.Double patterning generally includes two picture group cases.Must accurately aim at first group for second group.Two picture group cases are aimed in the mode that has certain interval in some cases.Aim at this two picture groups case and brought significant challenge, when especially the requirement of semi-conductor industry propose to increase resolution and stricter overlapping the requirement.
Summary of the invention
Embodiments of the invention relate generally to the contrast of the alignment mark in the photoengraving pattern metallization processes of improvement such as double patterning technology.
In one embodiment of the invention, provide a kind of method of using photolithography to make semiconductor devices.This method comprises: be added into described first radiation-sensitive layer with the first radiation-sensitive layer coated substrate with dye composition.Described method also comprises: described first radiation-sensitive layer is exposed and develops, to form first photoengraving pattern; Apply described first photoengraving pattern with second radiation-sensitive layer; Detect the position of described first photoengraving pattern; The described substrate of detected position alignment with described first photoengraving pattern; And described second radiation-sensitive layer exposed and develop, to form second photoengraving pattern.Described method is aimed at second photoengraving pattern with the detected position of described first photoengraving pattern.In an illustrative embodiments, other pattern that the dye composition and first photoengraving pattern have formed diffraction grating, diffraction array, aligned array or be used to aim at.
In another embodiment of the present invention, described method comprises: with the first radiation-sensitive layer coated substrate; Described first radiation-sensitive layer is exposed and develops, with in forming first photoengraving pattern; With apply described first photoengraving pattern with second radiation-sensitive layer.Described method also comprises: dye composition is added into described second radiation-sensitive layer; Detect the position of described first photoengraving pattern; The described substrate of detected position alignment with described first photoengraving pattern; With described second radiation-sensitive layer is exposed and develops, to form second photoengraving pattern.Described method comprises: second photoengraving pattern is aimed in the detected position with described first photoengraving pattern.In an illustrative embodiments, other pattern that the dye composition and second photoengraving pattern form diffraction grating, diffraction array, aligned array or be used to aim at.
The invention still further relates to the goods of manufacturing, it comprises: with the substrate of first radiation-sensitive layer coating; First photoengraving pattern that in first radiation-sensitive layer, forms; With second radiation-sensitive layer that is used to apply first radiation-sensitive layer.First photoengraving pattern or second radiation-sensitive layer comprise dye composition.Dye composition is cooperated with first photoengraving pattern or second radiation-sensitive layer, with other pattern that forms diffraction grating, diffraction array, aligned array or be used to aim at.In an illustrative embodiments, the goods of manufacturing also comprise: direct second photoengraving pattern of aiming at first photoengraving pattern of other pattern that uses diffraction grating, diffraction array, aligned array or be used to aim at.
The invention still further relates to a kind of system that uses photolithography to make semiconductor devices.This system comprises irradiation source, and this irradiation source is used for providing the alignment beams of alignment mark certain wavelengths, that be used to read in double patterning technology.Described system also comprises alignment system, and this alignment system is used for detecting being coated in second radiation-sensitive layer on first photoengraving pattern or being coated to dye composition among in first radiation-sensitive layer on the substrate one in described double patterning technology.Based on two patterning step of the described double patterning technology of alignment mark that forms in described first photoengraving pattern time, described dye composition is provided at the contrast of the expectation between described first photoengraving pattern and described second radiation-sensitive layer.
Description of drawings
Above-mentioned summary of the invention has been set forth many, but is not whole aspect of the present invention.By the description that various " embodiment " of the present invention are read in combination with reference to the accompanying drawings, others of the present invention are conspicuous to the technician of the technical field of the invention.When setting forth following embodiment, the mode by example shows the present invention, but is not restrictive.Reference marker similar in the accompanying drawing is represented similar elements.
Figure 1A and 1B illustrate reflective and transmission-type lithographic equipment according to an embodiment of the invention respectively;
Fig. 2 schematically shows lithographic cell according to an embodiment of the invention;
Fig. 3-6 is schematically illustrated in the step in the spacer double patterning technology according to an embodiment of the invention;
Fig. 7 schematically shows the SEM profile in polysilicon that is produced by spacer double patterning technology according to one embodiment of present invention;
Fig. 8-11 schematically shows the step in photoetching-etching-photoetching-etching (LELE) double patterning technology according to one embodiment of present invention;
Figure 12 schematically shows the SEM profile in polysilicon that is produced by LELE double patterning technology according to one embodiment of present invention;
Figure 13-16 schematically shows the step in photoetching-freeze-photoetching-etching (LFLE) double patterning technology according to an embodiment of the invention;
Figure 17 schematically shows the SEM profile in polysilicon that is produced by LFLE double patterning technology according to an embodiment of the invention;
Figure 18 schematically shows the alignment beams that double patterning piles up that incides according to an embodiment of the invention;
Figure 19 schematically shows the alignment beams that the double patterning of augmenting with dyestuff piles up that incides according to an embodiment of the invention;
Figure 20 schematically shows the exemplary transmitted spectrum of the photoresist of augmenting with coloured dye according to an embodiment of the invention;
Figure 21 schematically shows the molar extinction coefficient spectrum of merocyanine according to an embodiment of the invention (Merocyanine) 540;
Figure 22 schematically shows the molar extinction coefficient spectrum that is used for thiophene three carbocyanines (C7) dyestuff according to an embodiment of the invention;
Figure 23 schematically shows the process flow diagram of the embodiment that is used to illustrate method constructed in accordance;
Figure 24 schematically shows the process flow diagram of another embodiment that is used to illustrate manufacturing method according to the invention; With
Figure 25 schematically shows the block scheme of the system that is used to make according to an embodiment of the invention.
Embodiment
As depicted in the figuresly go out, describe the present invention referring now to the several preferred embodiments of the present invention.In following description,, many details have been set forth in order to provide to comprehensive understanding of the present invention.Yet, not having can to implement the present invention under the situation of some or all these details, this is apparent to those skilled in the art.In other situation, of the present invention obscure in order to prevent from unnecessarily to cause, known processing step is not described in detail.
Similarly, the accompanying drawing that is used to the embodiment of the system that illustrates is semidiagrammatic and schematic, and maps not in scale.In order clearly to show, some sizes are by exaggerative.
Can on the direction except situation about going out as shown, operate shown equipment.In addition, for clear and be convenient to show, describe and its explanation and disclosure and description have in the situation of a plurality of embodiment of some common features, the feature that the class Sihe is identical is described with identical reference marker usually each other.
Figure 1A and 1B schematically show lithographic equipment 100 and lithographic equipment 100 ' according to an embodiment of the invention respectively.Each comprises lithographic equipment 100 and lithographic equipment 100 ': irradiation system (irradiator) IL, and its configuration is used to regulate radiation beam B (for example, deep ultraviolet (DUV) radiation or extreme ultraviolet (EUV) radiation); Supporting construction (for example mask platform) MT, it is arranged to and supports pattern and form device (for example mask, mask or dynamic pattern form device) MA, and is used for accurately locating the first locating device PM that pattern forms device MA with configuration and links to each other; And substrate table (for example, wafer station) WT, it is configured to maintenance substrate (for example being coated with the wafer of resist) W and is used for accurately with configuration, and the second locating device PW of position substrate W links to each other.Lithographic equipment 100 and lithographic equipment 100 ' also have optical projection system PS, and its configuration is used for giving the target portion C of the graphic pattern projection of radiation beam B to substrate W (for example comprising one or more tube core) with formed device MA by pattern.In lithographic equipment 100, pattern forms device MA and optical projection system PS is reflective; In lithographic equipment 100 ', pattern forms device MA and optical projection system PS is a transmission-type.
Irradiation system IL can comprise various types of opticses, and for example optics of refractive, reflection-type, magnetic type, electromagnetic type, electrostatic or other type or its combination in any are with guiding, be shaped or control radiation B.
Supporting construction MT is with the design of the direction that depends on pattern and form device MA, lithographic equipment 100 and 100 ' and form the mode whether device MA remain on medium other condition of vacuum environment such as pattern and keep pattern to form device MA.Supporting construction MT can adopt machinery, vacuum, static or other clamping technology keeps pattern to form device MA.Supporting construction MT can be framework or platform, and for example, it can become fixing or movably as required.Supporting construction MT can guarantee that pattern forms device MA and is positioned at (for example with respect to optical projection system PS) on the desired position.
Term " pattern formation device " MA should be broadly interpreted as to represent can be used in and give radiation beam B on the xsect of radiation beam so that form any device of pattern on the target portion C at substrate W with pattern.The pattern that is endowed radiation beam B will be corresponding with the specific functional layer in the device that forms on the target portion C, for example integrated circuit.
It can be (for example in the lithographic equipment 100 ' of Figure 1B) or reflective (for example in the lithographic equipment 100 of Figure 1A) of transmission-type that pattern forms device MA.The example that pattern forms device MA comprises mask, mask, array of programmable mirrors and liquid crystal display able to programme (LCD) panel.Mask is known in photolithography, and comprises the mask-type such as binary mask type, alternate type phase shifting mask type, attenuation type phase shifting mask type and various hybrid mask types.The example of array of programmable mirrors adopts the matrix arrangements of small reflector, and each small reflector can tilt independently, so that reflect the radiation beam of incident along different directions.The described catoptron that has tilted gives pattern by described catoptron matrix radiation reflected bundle B.
Term " optical projection system " PS can comprise the optical projection system of any type, comprise refractive, reflection-type, reflection-refraction type, magnetic type, electromagnetic type and electrostatic optical systems or its combination in any, as for employed exposing radiation was fit to or for such as use immersion liquid or use the vacuum other factors was fit to.Vacuum environment can be used for EUV or electron beam irradiation, because other gas may absorb too many radiation or electronics.Therefore, can be under the help of vacuum wall and vacuum pump vacuum environment be offered whole beam path.
Irradiator IL receives the radiation beam that sends from radiation source S O.This source SO and lithographic equipment 100,100 ' can be discrete entities (for example when this source SO is excimer laser).In this case, this source SO can be considered to a part that forms lithographic equipment 100 or 100 ', and the help of the bundle transmission system BD (Figure 1B) by comprising for example suitable directional mirror and/or beam expander is passed to described irradiator IL with radiation beam B from described source SO.In other cases, described source SO can be described lithographic equipment 100,100 ' ingredient (for example when described source SO is mercury lamp).The described bundle transmission system BD of can be with described source SO and described irradiator IL and being provided with if desired the time is called radiating system together.
Irradiator IL can comprise the adjuster AD (Figure 1B) of the angle intensity distributions that is used to adjust described radiation beam.Usually, can adjust the described at least outside and/or the inner radial scope (generally being called σ-outside and σ-inside) of the intensity distributions in the pupil plane of described irradiator IL.In addition, described irradiator IL can comprise various other parts (Figure 1B), for example integrator IN and condenser CO.Described irradiator IL can be used to regulate described radiation beam B, in its xsect, to have required homogeneity and intensity distributions.
With reference to Figure 1A, radiation beam B incides the described pattern that remains on supporting construction (for example, the mask platform) MT and forms on device (for example, the mask) MA, and forms pattern by described pattern formation device MA.In lithographic equipment 100, radiation beam B is formed device (for example, mask) MA reflection from pattern.After being formed device (for example, mask) MA reflection from pattern, radiation beam B passes optical projection system PS, and it focuses on radiation beam B on the target portion C of substrate W.(for example, interferometric device, linear encoder or capacitive transducer) help can accurately mobile substrate table WT, for example so that different target portion C is positioned in the path of described radiation beam B by the second locating device PW and position transducer IF2.Similarly, the first locating device PM and another location sensor IF1 can be used to accurately to locate pattern with respect to the path of radiation beam B and form device (for example, mask) MA.Can use mask alignment mark M1, M2 and substrate alignment mark P1, P2 to come aligned pattern to form device (for example mask) MA and substrate W.
With reference to Figure 1B, radiation beam B incides the described pattern that remains on the supporting construction (for example, mask table MT) and forms on device (for example, the mask) MA, and forms pattern by described pattern formation device MA.Passed after the mask MA, described radiation beam B is by optical projection system PS, and described optical projection system PS focuses on described bundle on the target portion C of described substrate W.By the second locating device PW and position transducer IF (for example, interferometric device, linear encoder or capacitive transducer) help, can accurately move described substrate table WT, for example so that different target portion C is positioned in the path of described radiation beam B.Similarly, for example after the machinery from the mask storehouse obtains, or in scan period, the described first locating device PM and another position transducer (clearly not illustrating among Figure 1B) can be used for respect to the path of described radiation beam B location mask MA accurately.
The long stroke module (coarse positioning) of a part that usually, can be by forming the described first locating device PM and the help of short stroke module (fine positioning) realize the mobile of mask table MT.Similarly, can adopt the long stroke module of a part that forms the described second locating device PW and short stroke module to realize moving of described substrate table WT.Under the situation of stepper (opposite with scanner), mask table MT can only link to each other with short-stroke actuator, perhaps can fix.Can use mask alignment mark M1, M2 and substrate alignment mark P1, P2 to come alignment mask MA and substrate W.Although shown substrate alignment mark has occupied the application-specific target part, they can be in the space between the target part (these be known as the line alignment mark).Similarly, under the situation that will be arranged on more than one tube core on the mask MA, described mask alignment mark can be between described tube core.
Shown lithographic equipment 100 and 100 ' can be used in following pattern at least a:
1. in step mode, supporting construction (for example mask platform) MT and substrate table WT are remained static substantially in, the whole pattern of giving described radiation beam B is once projected on the target portion C (that is, single static exposure).Then, described substrate table WT is moved along X and/or Y direction, make and to expose to the different target portion C.
2. in scan pattern, when supporting construction (for example mask platform) MT and substrate table WT are synchronously scanned, with the graphic pattern projection of giving described radiation beam B on the target portion C (that is, single dynamic exposure).Substrate table WT can determine by (dwindling) magnification and the image inversion characteristic of described optical projection system PS with respect to speed and the direction of supporting construction (for example mask platform) MT.
3. in another kind of pattern, remain supporting construction (for example mask platform) MT that keeps programmable pattern to form device static substantially, and when described substrate table WT is moved or scans, will give the graphic pattern projection of described radiation beam B on the target portion C.Can adopt impulse radiation source SO, and after the moving each time of described substrate table WT or between the continuous radiation pulse in scan period, upgrade described pattern able to programme as required and form device.This operator scheme can be easy to be applied to utilize pattern able to programme to form in the maskless lithography art of device (for example, the array of programmable mirrors of type) as mentioned above.
Also can adopt the combination and/or the variant of above-mentioned use pattern, or diverse use pattern.
In another embodiment, lithographic equipment 100 comprises extreme ultraviolet (EUV) source, and it is configured to and produces the EUV radiation beam that is used for the EUV photolithography.Usually, the EUV source is configured in the radiating system, and corresponding irradiation system is configured to the EUV radiation beam of regulating the EUV source.
Also can adopt the combination and/or the variant of above-mentioned use pattern, or diverse use pattern.
As shown in Figure 2, according to one embodiment of present invention, lithographic equipment LA forms the part of lithographic cell LC, and lithographic cell LC is called as photoetching unit (lithocell) or bunch (cluster) sometimes, its also comprise be used on substrate, exposing before with the equipment of post-exposure processes.In one example, photoetching unit or bunch can comprise the spinner SC that is used to deposit resist layer, developer DE, chill plate CH and the bake plate BK of the resist that exposed of being used to develop.Substrate loading and unloading device or the RO of robot pick up substrate from input/output end port I/O1, I/O2, are moving them between the different treatment facilities and then they are being passed on the loading bay LB of lithographic equipment.Usually these devices that are collectively referred to as track are under the control of track control module TCU, and this track control module TCU is controlled by management control system SCS, and this management control system SCS is also via photoetching control module LACU control lithographic equipment.Therefore, can operate different equipment, with maximum productivity and treatment effeciency.
The resolution that optical lithography has little by little satisfied semi-conductor industry in the following manner increases and the stricter challenge of overlapping requirement: the numerical aperture that increases described optical devices; Shorten illumination wavelength; Handle with the low k factor of support.This trend is continued, and for EUV photolithography instrument wavelength decreases to 13 nanometer, increases to 1.35 for the numerical aperture based on the immersion lithographic art instrument of water.
Current, base and (193 nanometer) submergence instrument of water can print less than 40 nanometers (half-section apart from) resolution and have a overlapping accuracy less than 6 nanometers.For ensuing lithography node, will use with the double patterning technology based on the immersion lithographic art of water, and will by under be pushed into and be lower than the 32nm node.Main challenge for exposure tool is the severization of the needed standard of double-patternization, deals with the contraction of process window simultaneously.Code requirement comprises the throughput rate of increase, stricter overlapping and stricter critical dimension control.
For 30 years of the past, optical lithography became the main flow that semiconductor devices is produced.By increasing the optical system numerical aperture gradually and utilizing the exposure irradiation wavelength that shortens gradually, it has satisfied the accurate resolution requirement of semi-conductor industry route map.
Overcome obstacle once in a while by introducing new technology.Such example is to introduce the immersion lithographic art, and its permission optical system numerical aperture as discussed above increases the limit above 1.0.Make water allow the numerical aperture of optical system to increase to 1.35 as the immersion fluid between lens and the wafer.The new limit that refractive index applied during this has represented and has been piled up by imaging layer.Maximum numerical aperture is subject to the minimum refractive index of layer in piling up and the product of the sine at maximal rays angle.For the submergence based on water, the refractive index of the qualification during thin layer piles up is 1.44 for water, is 1.56 for the final element glass of lens.This has provided the maximum numerical aperture of 1.35 (being 0.94x1.44), and wherein 0.94 is the sine at the imaging ray angle (70 degree) of maximum reality.Change immersion fluid and final lens element glass and be used for improving the minimum refractive index that layer piles up, represented huge technological challenge, and can not in the time frame of needed photolithography route map, finish and before the manufacturing usability requirements of EUV photolithography, finish.By the following half-section that provides the immersion optics system apart from resolution:
Wherein: Rs is that half-section is apart from resolution; λ is an illumination wavelength; NA is the optical system numerical aperture; With k is the process factor relevant with configuration with the partial coherence of irradiation.The minimum value of k is 0.25 and is associated with using bipolar irradiation.
Therefore the highest available optics half-section is 36nm apart from resolution for the bipolar irradiation of using polarization with the wavelength of 193 nanometers, 1.35 numerical apertures, based on the condition of the submergence of water.Apparently, for occupying 32 nanometers (half-section distance) photolithography of node and the optical lithography that surpasses this photolithography, need some other innovations." double patterning " represented such paces and has been in the exploitation.
At present double patterning is grouped into three kinds of main treatment technologies: based on the double patterning of distance piece; Double patterning based on photoetching-etching-photoetching-etching (LELE); With double patterning based on photoetching-processing-photoetching-etching (LPLE).The example of LPLE is based on the double patterning of photoetching-freeze-photoetching-etching (LFLE).Under development, these all processes have provided the result of desirable.Spacer techniques is particularly suitable for being used for the manufacturing of flash memory.
In Fig. 3-6, demonstrate the operation of basic spacer double patterning according to an embodiment of the invention.Fig. 3-4 illustrates the first step in the distance piece operation, and it is used for limiting resist pattern (showing as Fig. 3) by photolithography, afterwards this resist pattern is transferred to sacrifice layer (as shown in Figure 4) by etching.In Fig. 3, pattern forms the top that device 310 is presented at the photoengraving pattern 320 (resist) at the top that is positioned at bottom antireflective coat (barc) layer 330.In step (not shown) early, form pattern 320 by resist layer being exposed and developing.Remainder in piling up comprises sacrifice layer 340, hard mask layer 350, electrical layer (electric layer) 360 and oxide layer 370.In one embodiment, sacrifice layer 340 comprises the advanced patterned film (APF) of the Santa Clara Applied Materials of California.
According to one embodiment of present invention, the etching of passing through that shows from Fig. 3 of Fig. 4 is transferred to photoengraving pattern 320 (not demonstrating) on the sacrifice layer 340 in Fig. 4.
According to one embodiment of present invention, Fig. 5 demonstrates and is conformally deposited to through the top of overetched hard mask pattern 350 and anisotropically etched back is staying the distance piece cambium layer 380 of spacer pattern afterwards, and this spacer pattern is followed all edges of the sacrificial pattern that the initial lithographic art limits.After the initial sacrificial pattern 340 etched (referring to Fig. 6), to stay high-resolution spacer pattern.
Afterwards, described spacer pattern stood for the second photoetching stage, was used for etching and trimmed undesirable part of spacer patternization, thereby stay needed high-resolution final pattern (not shown).Afterwards, final etched being transferred in the hard mask layer of high resolving power spacer pattern that limits, this hard mask layer is used to limit the etching to following polysilicon layer (not shown).In Fig. 7, demonstrate exemplary scanning electron microscope (SEM) profile that in polysilicon, obtains.
Because realize the high resolving power of live width by the thickness of control sedimentary deposit rather than by controlling optical imagery, so this spacer techniques has very strong versatility.This is avoided increasing the overlapping requirement and the resolution of optical exposure instrument.Major requirement to the optical exposure instrument is not a resolution or overlapping, but the control of the homogeneity of critical dimension and critical dimension.The control of critical dimension is to the width generation effect in the gap between the distance piece live width that is limited.If the critical live width size of the sacrificial pattern that is limited by lithography tool is incorrect, in measured space width, will occurs double-form (bi-modal) so and distribute.
According to one embodiment of present invention, in Fig. 8-11, demonstrate basic photoetching-etching-photoetching-etching (LELE) treatment process.In LELE, in two treatment process, expose two with pattern that photolithographicallpatterned was limited in the mode that has certain interval.As shown in Figure 8, demonstrate pattern and form the top that device 810 is positioned at stack layer.At the top of stack layer is first photoengraving pattern 820 (resist) at the top of barc layer 830.The remainder of stack layer comprises hard mask layer 840, polysilicon layer 850 and last silicon dioxide (SiO
2) layer 860.
According to one embodiment of present invention, Fig. 8-9 demonstrates first photoengraving pattern 820 is printed onto in the resist, and by etching it is transferred to hard mask layer 840 afterwards.The ratio at line and interval is that the pattern of 1: 1 type is 1: 3 by overexposure to the ratio at line and interval, and this has provided the technology controlling and process of optimizing and has expanded at interval, to allow to insert second photoengraving pattern.
According to one embodiment of present invention, Figure 10 demonstrates imaging and its qualification in resist 880 of the second gap pattern 870, and this resist is above another barc layer 890.Also, be used to provide 1: 3 the line and the ratio at interval with described pattern overexposure.Next, second photoengraving pattern is developed, to limit resist/barc pattern 1100.Finally, being limited at first pattern 840 in the hard mask layer and second pattern 1100 that is limited in the resist layer is transferred in the polycrystalline silicon device layer (not shown) by etching.
SEM profile among Figure 12 demonstrates the typical line profile that is limited in the polysilicon.Difference in height between the line is owing to the difference of the etching characteristic of the resist image (the not hard mask that removes from first pattern) of limiting pattern and hard mask.
For this technology, be the homogeneity of critical dimension and overlapping to the definite requirement of exposure tool." positivity " LELE technological process that use demonstrates in Fig. 8-11, overlapping control defines the dimensional homogeneity at the interval between the line, and it may be so crucial unlike the developed width of the line that is used to limit grid structure for the processing of device.Critical dimension control for final polysilicon live width is most important requirement; This is limited by exposure tool.If the critical dimension of first and second patterns can not be mated, can observe the double-form live width so and distribute.
Up-to-date is LPLE technology with the most exciting exploitation.Example is to freeze technology (to be also referred to as photoetching-freeze-photoetching-etching, LFLE).LPLE technology has reduced the number of the treatment step in the LELE operation.Do not need first etching in the LELE technology.This means that potential cost savings and productive rate improve.In Figure 13-16, demonstrate the LFLE order.
According to one embodiment of present invention, Figure 13 demonstrates the qualification of first photoengraving pattern that is similar to LELE technology.The pattern that Figure 13 demonstrates in first photoengraving pattern (being made by resist), 1320 tops forms device 1310, and this first photoengraving pattern is exposed and develops.Resist 1320 is positioned at the top of barc layer 1330, and this barc layer is at the top of polysilicon layer 1340.SiO
2Layer 1350 is positioned at the bottom of stack layer.
In next step, according to one embodiment of present invention, as shown in figure 14, freeze the patterning of resist in the place that is fit to, make next resist coating that it can be used to limit second pattern in the resist apply, and not dissolvedly fall, rather than pattern 1320 is etched in the hard mask.Frozen resist pattern displaying is 1320 '.Can realize freezing of resist pattern in following multiple mode, they comprise: ion injects; The DUV light stiffening is handled; Chemicosolidifying processing etc.Chemicosolidifying is handled and to be promised to be most economical and processing mode the most easily.
In Figure 15, according to one embodiment of present invention, proceed to handle at resist coating 1360.According to one embodiment of present invention, Figure 16 demonstrates second qualification of pattern 1370 in resist.First image 1320 ' and second image 1370 are limited in the resist, and have prepared etching and be transferred in the polysilicon 1340.In Figure 17, demonstrate according to an embodiment of the invention, the SEM profile that in polysilicon, obtains.
LFLE technology has proposed the challenge identical with LELE technology to exposure tool.By using wherein patterning light " positivity " operation, show as the wide variety at the interval between the line from the aliasing error of imaging to exposing at interval.Of inferior quality overlapping control will provide the double-form in the width at interval to distribute.Independently the homogeneity and critical dimension (CD) control of step of exposure have also facilitated the double-form in the line width variation to distribute for each.Outstanding along with all double patterning operations become the critical dimension and the overlapping standard of the strictness that links together with high productivity for the challenge of exposure tool.
A related major obstacle of double patterning technology is that first photoengraving pattern is accurately aimed at second photoengraving pattern.In one embodiment, first pattern is aimed in the mode that has certain interval with second pattern, but always not this situation.In order to illustrate these influences, discuss LFLE technology in more detail as an example hereinafter.With reference to figure 14-16, apply first photoengraving pattern 1320 ' again, be used to hold second photoengraving pattern 1370 with second radiation-sensitive layer (resist layer) 1360.The alignment mark that for example limits when being coated with second radiation-sensitive layer 1360, because they have similar optical property, has been deleted in contrast ground in first radiation-sensitive layer 1320.Therefore, can not watch alignment mark in the resist by alignment system.
In Figure 18, the alignment system irradiation beam on second resist layer 1360 is incided in arrow 1810 expressions.Dotted arrow 1820 expressions are from the very weak scattered signal of buried alignment keys.Usually, this will force use to be used to aim at first pattern and second pattern subsequently by before the alignment mark that processing horizontal limited (i.e. lower floor in the alignment keys stack layer).Therefore, two patterns are not by directly aligned with each other, but they are aimed at independently by substitute.This has in fact reduced the alignment precision between the pattern.This has been main problem, and will be more serious because the line interval width continues to reduce.
According to one embodiment of present invention, be with the resist-coating alignment mark time, to provide to make the qualification of alignment mark (for example diffraction grating, diffraction array, aligned array or other pattern of being used for aiming at) in first pattern of double patterning technology (for example LFLE) of patterning give prominence to the method that presents for a scheme of the problem of above setting forth.For this reason, in the double patterning processing step, before first resist layer is exposed and develops, with it simultaneously or after first resist layer is exposed and develops, can add dye composition.For example, can use the dye composition that can not disturb the photochemical properties of resist layer significantly or can not disturb the ability of its freeze frame in the situation of LFLE significantly.
In one embodiment, as discussing in more detail hereinafter, dye composition is light-sensitive compound or photochromic material.In one embodiment, dye composition can be to be absorbefacient basically or to be reflexive basically in the wavelength period of expectation.In another embodiment, dye composition can be the expectation wavelength period in be fluorescence or cold light.This wavelength period can comprise alignment system irradiation beam wavelength.In these all embodiment, diffraction grating, diffraction array, aligned array or the pattern that is used to aim at are formed.Can detect this diffraction grating, diffraction array, aligned array or pattern by alignment system.
According to one embodiment of present invention, in Figure 19, the alignment system irradiation beam on second resist layer 1360 is incided in arrow 1910 expressions.In the embodiment that this demonstrates, first pattern 1320 ' is augmented by dye composition.Arrow 1920 expressions are from the strong signal (for example order of diffraction) of buried alignment keys, and it is visible now, also is like this even first pattern is applied by second resist layer 1360.As shown in the figure, dye composition is coated to first photoengraving pattern 1320 '.In another embodiment, the dye composition that is fit to can be coated on second radiation-sensitive layer 1360.Yet in these embodiments any, dye composition provides at first photoengraving pattern and has covered optical contrast between its second resist layer.This contrast has formed diffraction grating, diffraction array, aligned array or has depended on other pattern of geometric configuration of the pattern of the alignment mark that uses in first Patternized technique in double patterning technology.
In one embodiment, dye composition is added on first resist layer (or first photoengraving pattern).The dye composition and first resist layer (or first photoengraving pattern) cooperation, other pattern that is used to form diffraction grating, diffraction array, aligned array or is used to aim at.In another embodiment, dye composition is added on second resist layer, and this second resist layer covers first pattern (alternatively it being coated on first resist layer or first photoengraving pattern).In this embodiment, second resist layer (covering first pattern) and the cooperation of dye composition wherein, other pattern that is used to form diffraction grating, diffraction array, aligned array or is used to aim at.In in these embodiments any, diffraction grating, diffraction array, aligned array or other pattern of being used for aiming at intersperse among dye composition by the zone that will lack dye composition and form.In one embodiment, dye composition is the light-sensitive compound or the photochromic material of sensitization.
Can select dyestuff, with the Matching Alignment system wavelength.These dyestuffs can be added in double patterning technology on first resist layer, maybe can be applied on the photoengraving pattern that has developed.In another embodiment, dyestuff may be added on the coat of second resist.In order to be used for LFLE, can augment frozen material with dyestuff, make described material freeze first photoengraving pattern and the optical contrast is provided simultaneously,, thereby make the pattern itself of winning become alignment mark with other pattern of setting up diffraction grating, diffraction array, aligned array or being used to aim at.By this way, second pattern in double patterning technology can directly be aimed at first photoengraving pattern, and needn't adopt the alignment mark of replacement, thereby has greatly improved such as the alignment accuracy in the photoengraving pattern metallization processes of double patterning technology.
Exemplary alignment system wavelength in existing the use is 532nm, 635nm, 780nm and 850nm; Yet, depend on the light of the particular type of in etching system, using or other wavelength of radiation wavelength and also be fine.Can select dyestuff, make the character of resist unaffected under the photochemistry wavelength and only under alignment wavelengths, influence the resist transparency.
Figure 20 demonstrates the exemplary transmitted spectrum of the photoresist of augmenting the chromatic colour dyestuff.Described spectrum shows that dyestuff is absorbefacient in certain wavelengths section (it can be selected for corresponding to alignment wavelengths) basically; Yet these dyestuffs are transparent under typical photochemistry wavelength basically.In Figure 20, the spectrum of reference marker 2010 expression cyan photoresists, the spectrum of the spectrum of reference marker 2020 expression magenta photoresists and the yellow photoresist of reference marker 2030 expressions.
A kind of exemplary dyes is a merocyanine 540, its 540 nanometers and near be strong absorption.Demonstrate the molar extinction coefficient spectrum of merocyanine 540 at Figure 21.Hereinafter demonstrate the chemical constitution of merocyanine 540:
Second kind of exemplary dyes is thiophene three carbocyanines (thiatricarbocyanine) (being also referred to as C7) dyestuffs, its 780 nanometers and near be strong absorption.In Figure 22, demonstrate the molar extinction coefficient spectrum of C7.Hereinafter demonstrate the chemical constitution of C7:
These two kinds of dyestuffs are transparent (for example in 220 nanometer to 400 nanometer range) under typical photochemistry wavelength.Other dyestuff that has the character of absorbability, fluorescence or cold light under typical alignment wavelengths also is utilizable.The manufacturer of an exemplary dyestuff is FL.Jupiter, H.W.Sands company.For example, can utilize supporting the photochemistry exposure under 193nm, 248nm, 365nm, 405nm and the 435nm is absorbefacient other dyestuff under typical alignment system wavelength simultaneously basically.
In one embodiment of the invention, dye composition comprises light-sensitive compound.In another embodiment of the present invention, dye composition comprises photochromic material.Example according to photochromic material of the present invention is spiro-pyrans (spiropyran), azobenzene (azobenzene), photochromic quinone (photochromic quinone), inorganic photochromic material or the photochromic complex compound that is connected to the organic chromophores of metallic ion.
Figure 23 demonstrates the embodiment that use photolithography according to an embodiment of the invention is made the method 2300 of semiconductor devices.In piece 2310, with first radiation-sensitive layer (for example resist) coated substrate.In piece 2320, dye composition is added into first radiation-sensitive layer.In one embodiment, piece 2320 (interpolation dye composition) is positioned at piece 2310 (coated substrate) before.In another embodiment, piece 2310 (coated substrate) is positioned at piece 2320 (interpolation dye composition) before.In piece 2330, first radiation-sensitive layer is exposed and develops, to form first photoengraving pattern.In one embodiment, piece 2330 uses are from the radiation beam of lithographic equipment.In one embodiment, piece 2330 (exposure and development) is positioned at piece 2320 (interpolation dye composition) before; Mean that dye composition is added into first photoengraving pattern.In piece 2340, first photoengraving pattern is coated with second radiation-sensitive layer.In piece 2350, detect the position of first photoengraving pattern.In one embodiment, finish this detection by the alignment system bundle.In piece 2360, aim at substrate with the detected position of first photoengraving pattern.In piece 2370, second radiation-sensitive layer is exposed and develops, be used to form second photoengraving pattern.In one embodiment, piece 2370 uses are from the radiation beam of lithographic equipment.Because before second radiation-sensitive layer is exposed, aim at substrate, so aim at second photoengraving pattern with first photoengraving pattern with first pattern.In one embodiment, aim at second photoengraving pattern with first photoengraving pattern in the mode that has certain interval.
In an embodiment of method 2300, other pattern that the dye composition and first photoengraving pattern form diffraction grating, diffraction array, aligned array or be used to aim at.An embodiment of method 2300 also is included in second radiation-sensitive layer and applies the selectable (not shown) step of handling first photoengraving pattern before the step 2340 of first photoengraving pattern.In one embodiment, this selectable treatment step comprises: freeze first photoengraving pattern.In this embodiment, realize piece 2320 (interpolation dye composition) by before frozen material is coated to first photoengraving pattern, at first dye composition being added into frozen material.Like this, pattern has not only been freezed in the interpolation of frozen material, but also has introduced dye composition.
In an embodiment of method 2300, dye composition the expectation wavelength period in be fluorescence or cold light, it can be corresponding to the alignment system wavelength.In another embodiment, dye composition is absorbefacient or is reflexive basically that it can be corresponding to the alignment system wavelength basically in the wavelength period of expectation.In one embodiment, dye composition comprises light-sensitive compound.In another embodiment, dye composition comprises photochromic material.Comprise spiro-pyrans (spiropyran), azobenzene (azobenzene), photochromic quinone (photochromic quinone), inorganic photochromic material or be connected to the photochromic complex compound of the organic chromophores of metallic ion according to the example of photochromic material of the present invention.
Figure 24 demonstrates the alternative method 2400 that use photolithography according to an embodiment of the invention is made semiconductor devices.The difference of the principle between the method 2300 and 2400 is that in method 2400, dye composition is added into second radiation-sensitive layer, rather than ground floor.Therefore, because dye composition is added in the operation of back, so the initial processing step that uses in traditional double patterning method remains unchanged.
In piece 2410, with first radiation-sensitive layer (for example resist) coated substrate.In piece 2420, first radiation-sensitive layer is exposed and develops, be used to form first photoengraving pattern.In one embodiment, piece 2420 uses are from the radiation beam of lithographic equipment.In piece 2430, apply first photoengraving pattern with second radiation-sensitive layer.In piece 2440, dye composition is added into second radiation-sensitive layer.In piece 2450, detect the position of first photoengraving pattern.In one embodiment, realize this detection by the alignment system bundle.In piece 2460, aim at substrate with the position of having detected of first photoengraving pattern.In piece 2470, second radiation-sensitive layer is exposed and develops, be used to form second photoengraving pattern.In one embodiment, piece 2470 uses are from the radiation beam of lithographic equipment.Because substrate was aimed at first pattern before exposure second radiation-sensitive layer, so, second photoengraving pattern aimed at first photoengraving pattern.In one embodiment, aim at second photoengraving pattern with first photoengraving pattern in the mode that has certain interval.
In an embodiment of method 2400, other pattern that the dye composition and second photoengraving pattern have formed diffraction grating, diffraction array, aligned array or be used to aim at.An embodiment of method 2400 also is included in second radiation-sensitive layer and applies the selectable (not shown) step of handling (for example freezing) first photoengraving pattern before the step 2430 of first photoengraving pattern.
In an embodiment of method 2400, dye composition the expectation wavelength period in be fluorescence or cold light, it can be corresponding to the alignment system wavelength.In another embodiment, dye composition is absorbefacient or is reflexive basically that it can be corresponding to the alignment system wavelength basically in the wavelength period of expectation.In one embodiment, dye composition comprises light-sensitive compound.In another embodiment, dye composition comprises photochromic material.Comprise spiro-pyrans (spiropyran), azobenzene (azobenzene), photochromic quinone (photochromic quinone), inorganic photochromic material or be connected to the photochromic complex compound of the organic chromophores of metallic ion according to the example of photochromic material of the present invention.
In Figure 25, demonstrate use photolithography according to an embodiment of the invention and make the system 2500 of semiconductor devices.System 2500 comprises irradiation source 2510 and alignment system 2520.Irradiation source 2510 provides the alignment beams of the alignment mark that is used for reading double patterning technology under certain wavelengths.Alignment system 2520 is configured to detection and is coated to second radiation-sensitive layer on first photoengraving pattern or is coated to dye composition among in first radiation-sensitive layer on the substrate one in double patterning technology.Based on two patterning step of the alignment mark double patterning technology that forms in first photoengraving pattern time, dye composition provides the contrast of the expectation between first photoengraving pattern and second radiation-sensitive layer.In one embodiment, aim at two patterning step in the mode that has certain interval.
Be appreciated that and in double patterning technology arbitrarily (for example distance piece, LELE, LPLE or LFLE double patterning technology), use dye composition.With reference to figure 8-11 and Figure 13-16, LELE and LFLE relate to first photoengraving pattern that applies with second radiation-sensitive layer (for example resist) subsequently again.In certain embodiments, first photoengraving pattern can have the alignment mark that produces during the treatment step that produces first pattern.Dye composition is added into first photoengraving pattern (before or after it is developed and exposes, and before or after substrate is coated) or second radiation-sensitive layer, the optical contrast is provided, has made dye composition cooperate with first photoengraving pattern or second lithography layer with other pattern that forms diffraction grating, diffraction array, aligned array or be used to aim at.Therefore, second photoengraving pattern can directly and very accurately be aimed at first photoengraving pattern.In certain embodiments, aim at second photoengraving pattern in the mode that has certain interval with first photoengraving pattern.
Before this, aim at first pattern, thereby introduced relevant error by use alignment mark in the layer of having handled before.Make second pattern aim at independently afterwards, introduced relevant error once more with this alignment mark.In the supposition of the poorest situation, error is big and on same direction, thereby has limited the optical resolution that can obtain.The direct alignment mark that second pattern is limited with same first pattern, a source of having eliminated error.
Though being described in detail in detail in this article, lithographic equipment is used in manufacturing IC (integrated circuit), but should be understood that, lithographic equipment described here can have the application that other is arranged aspect parts of feature of micro-meter scale even nanoscale in manufacturing, for example makes the guiding of integrated optics system, magnetic domain memory and check pattern, flat-panel monitor, LCD (LCD), thin-film head etc.One skilled in the art would recognize that in the situation of this alternate application, any term " wafer " or " tube core " that use can be thought respectively and more upper term " substrate " or " target part " synonym herein.Here the substrate of indication can be handled before or after exposure, for example in track (a kind ofly typically resist layer is coated onto on the substrate, and the instrument that the resist that has exposed is developed), measuring tool and/or the instruments of inspection.Under applicable situation, can be in this and other substrate processing instrument with content application disclosed herein.In addition, more than described substrate can be handled once, for example, make described term used herein " substrate " also can represent to have comprised the substrate of a plurality of processing layers for producing multilayer IC.
Term used herein " radiation " and " bundle " comprise the electromagnetic radiation of all types, comprise: ultraviolet (UV) radiation (for example have about 365,355,248,193,157 or the wavelength of 126nm) and extreme ultraviolet (EUV) radiation (for example, have in the 5-20nm scope wavelength) and the particle beams (for example ion beam or electron beam).
Under situation about allowing, any one or the combination in various types of opticses can be represented in term " lens ", comprises refraction type, reflective, magnetic, electromagnetic type and electrostatic optics.
As using herein, term " dye composition " is broadly explained." dye composition " can be any light-sensitive compound or any photochromic material." dye composition " can also be any compound that can change relevant optical property (such as but not limited to absorption, reflection, fluorescence and/or cold light), make the pattern or the alignment mark that in first radiation sensitive material layer, form to detect, even when it is covered with second radiation sensitive material layer with the optical property that is similar to undyed ground floor, also be like this.
More than describe and be intended to describe, rather than restrictive.Thereby, under the prerequisite of the protection domain that does not depart from claims, can above-mentioned the present invention be made amendment, this it will be apparent to those skilled in the art that.
Claims (15)
1. method of using photolithography to make semiconductor devices, described method comprises step:
(a) with the first radiation-sensitive layer coated substrate;
(b) dye composition is added into described first radiation-sensitive layer;
(c) described first radiation-sensitive layer is exposed and develop, to form first photoengraving pattern;
(d) apply described first photoengraving pattern with second radiation-sensitive layer;
(e) position of described first photoengraving pattern of detection;
(f) with the described substrate of detected position alignment of described first photoengraving pattern; With
(g) described second radiation-sensitive layer is exposed and develop, to form second photoengraving pattern;
(h) wherein, aim at second photoengraving pattern with described first photoengraving pattern.
2. manufacture method according to claim 1 also comprises step:
(a) described second photoengraving pattern is aimed at described first photoengraving pattern in the mode that has certain interval.
3. manufacture method according to claim 1 also comprises step:
(a) other pattern that forms diffraction grating, diffraction array, aligned array or be used to aim at by described dye composition and described first photoengraving pattern.
4. manufacture method according to claim 1 wherein, is added the step of dye composition and was carried out before applying described substrate.
5. manufacture method according to claim 1 wherein, is added the step of dye composition and is carried out after applying described substrate and to described first radiation-sensitive layer exposure with before developing.
6. manufacture method according to claim 1 wherein, is added the step of dye composition and is being carried out to described first radiation-sensitive layer exposure with after developing.
7. manufacture method according to claim 1 also comprises step:
(a) before applying described first photoengraving pattern, handle described first photoengraving pattern with described second radiation-sensitive layer.
8. manufacture method according to claim 1, wherein, described dye composition the expectation wavelength period in be fluorescence or cold light.
9. manufacture method according to claim 1, wherein, described dye composition is absorbefacient basically in the wavelength period of expectation or is reflexive basically.
10. method of using photolithography to make semiconductor devices, described method comprises step:
(a) with the first radiation-sensitive layer coated substrate;
(b) described first radiation-sensitive layer is exposed and develop, to form first photoengraving pattern;
(c) apply described first photoengraving pattern with second radiation-sensitive layer;
(d) dye composition is added into described second radiation-sensitive layer;
(e) position of described first photoengraving pattern of detection;
(f) with the described substrate of detected position alignment of described first photoengraving pattern; With
(g) described second radiation-sensitive layer is exposed and develop, to form second photoengraving pattern;
(h) wherein, aim at described second photoengraving pattern with described first photoengraving pattern.
11. manufacture method according to claim 10 also comprises step:
(a) described second photoengraving pattern is aimed at described first photoengraving pattern in the mode that has certain interval.
12. manufacture method according to claim 10 also comprises step:
(a) other pattern that forms diffraction grating, diffraction array, aligned array or be used to aim at by described dye composition and described second photoengraving pattern.
13. manufacture method according to claim 10 wherein, was handled described first photoengraving pattern before applying described first photoengraving pattern with second radiation-sensitive layer.
14. a system that uses photolithography to make semiconductor devices, described system comprises:
(a) irradiation source, described irradiation source are used for providing the alignment beams of alignment mark certain wavelengths, that be used to read in double patterning technology; With
(b) alignment system, described alignment system are configured to detection being coated in second radiation-sensitive layer on first photoengraving pattern or being coated to dye composition among in first radiation-sensitive layer on the substrate one in described double patterning technology;
(c) wherein, based on two patterning step of the described double patterning technology of alignment mark that forms in described first photoengraving pattern time, described dye composition is provided at the contrast of the expectation between described first photoengraving pattern and described second radiation-sensitive layer.
15. system according to claim 14.Wherein, described second photoengraving pattern is aimed at described first photoengraving pattern in the mode that has certain interval.
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