Summary of the invention
(Light-Emitting Diode, LED) encapsulating structure have better reliability degree and optical quality to the invention provides a kind of light-emitting diode.
The invention provides a kind of lighting device, its package structure for LED has better reliability degree and optical quality.
The invention provides a kind of optical diode base plate for packaging, make the package structure for LED that is provided with on it have better reliability degree and optical quality.
The present invention proposes a kind of package structure for LED, comprises LED package substrate, a plurality of first light-emitting diode chip for backlight unit, a plurality of second light-emitting diode chip for backlight unit and many bonding wires.LED package comprises substrate, first connection pad, a plurality of second connection pad and the 3rd connection pad with substrate.First connection pad is disposed in the substrate.Second connection pad is disposed in the substrate and is arranged in the array of n * (n-1), and wherein n is a positive integer, and the first connection pad arranged in proximity is in second connection pad of the 1st row of array.The 3rd connection pad be disposed in the substrate and arranged in proximity in the second capable connection pad of the n-1 of array, wherein second connection pad is disposed between first connection pad and second connection pad.First light-emitting diode chip for backlight unit is solid brilliant in first connection pad and respectively to being positioned at second connection pad of the 1st row that is arranged in array.Second light-emitting diode chip for backlight unit is solid respectively brilliant in second connection pad.Each first light-emitting diode chip for backlight unit is by second connection pad of a bonding wire routing to the correspondence of the 1st row that is arranged in array, each capable pairing second light-emitting diode chip for backlight unit of second connection pad of n-1 that is arranged in array passes through a bonding wire routing to the three connection pads, and the i that is arranged in array is capable and pairing second light-emitting diode chip for backlight unit of second connection pad of j row is capable to the i+1 that is arranged in array by a bonding wire routing and second connection pad of j row, wherein 1≤i≤n-2 and 1≤j≤n.
The present invention proposes a kind of lighting device, comprises pedestal and package structure for LED.Package structure for LED comprises LED package substrate, a plurality of first light-emitting diode chip for backlight unit, a plurality of second light-emitting diode chip for backlight unit and many bonding wires.LED package comprises substrate, first connection pad, a plurality of second connection pad and the 3rd connection pad with substrate.Substrate is disposed on the pedestal.First connection pad is disposed in the substrate.Second connection pad is disposed in the substrate and is arranged in the array of n * (n-1), and wherein n is a positive integer, and the first connection pad arranged in proximity is in second connection pad of the 1st row of array.The 3rd connection pad be disposed in the substrate and arranged in proximity in the second capable connection pad of the n-1 of array, wherein second connection pad is disposed between first connection pad and second connection pad.First light-emitting diode chip for backlight unit is solid brilliant in first connection pad and respectively to being positioned at second connection pad of the 1st row that is arranged in array.Second light-emitting diode chip for backlight unit is solid respectively brilliant in second connection pad.Each first light-emitting diode chip for backlight unit is by second connection pad of a bonding wire routing to the correspondence of the 1st row that is arranged in array, each capable pairing second light-emitting diode chip for backlight unit of second connection pad of n-1 that is arranged in array passes through a bonding wire routing to the three connection pads, and the i that is arranged in array is capable and pairing second light-emitting diode chip for backlight unit of second connection pad of j row is capable to the i+1 that is arranged in array by a bonding wire routing and second connection pad of j row, wherein 1≤i≤n-2 and 1≤j≤n.
The present invention proposes a kind of LED package substrate, comprises substrate, first connection pad, a plurality of second connection pad and the 3rd connection pad.First connection pad is disposed in the substrate.Second connection pad is disposed in the substrate and is arranged in the array of n * (n-1), and wherein n is a positive integer, and the first connection pad arranged in proximity is in second connection pad of the 1st row of array.The 3rd connection pad be disposed in the substrate and arranged in proximity in the second capable connection pad of the n-1 of array, wherein second connection pad is disposed between first connection pad and second connection pad.
In one embodiment of this invention, above-mentioned the 2nd row that are arranged in array to each second connection pad of n-1 row have for the second corresponding light-emitting diode chip for backlight unit carry out solid crystalline substance crystal bonding area, carry out the routing district of routing and the groove between crystal bonding area and routing district for corresponding bonding wire, the routing district that wherein is arranged in second connection pad of the capable and j row of the i+1 of array be positioned at the capable and j row of the i+1 that is arranged in array second connection pad crystal bonding area and be arranged between the crystal bonding area of capable and second connection pad that j is listed as of the i of array.
In one embodiment of this invention, above-mentioned each second connection pad that is arranged in the 1st row of this array have for the second corresponding light-emitting diode chip for backlight unit carry out solid crystalline substance crystal bonding area, carry out the routing district of routing and the groove between crystal bonding area and routing district for corresponding bonding wire, wherein crystal bonding area is in the routing district and be arranged between the 2nd second connection pad that is listed as of array.
In one embodiment of this invention, above-mentioned each second connection pad that is arranged in the n row of array have for the second corresponding light-emitting diode chip for backlight unit carry out solid crystalline substance crystal bonding area, carry out the routing district of routing and the groove between crystal bonding area and routing district for corresponding bonding wire, wherein crystal bonding area is in the routing district and be arranged between second connection pad that the n-1 of array is listed as.
For above-mentioned feature and advantage of the present invention can be become apparent, embodiment cited below particularly, and cooperate appended graphic being described in detail below.
Embodiment
Fig. 2 is the vertical view of the package structure for LED of one embodiment of the invention.Fig. 3 is the partial perspective view of the package structure for LED of Fig. 2.Fig. 4 is the vertical view of the LED package of Fig. 2 with substrate.Please refer to Fig. 2 to Fig. 4, the package structure for LED 100 of present embodiment comprises that LED package is with substrate 110, a plurality of first light-emitting diode chip for backlight unit 120 (illustrate is three), a plurality of second light-emitting diode chip for backlight unit 130 (illustrate is six) and many bonding wires 140 (illustrate is nine).LED package comprises substrate 112, first connection pad 114, a plurality of second connection pad 116 (illustrate is six) and the 3rd connection pad 118 with substrate 110.In one embodiment, substrate 112 has end face, and first connection pad 114 is disposed at the left area of the end face of substrate 112.The 3rd connection pad 118 is disposed at the zone, the right of the end face of substrate 112.Second connection pad 116 is disposed at the zone line of the end face of substrate 112.Second connection pad 116 is disposed between first connection pad 114 and the 3rd connection pad 118.In another embodiment, connection pad can be conductive electrode.In other embodiments, bonding wire can be electric wire.Substrate can be base plate (submount), carries seat (carrier) or circuit board.
First connection pad 114 is disposed in the substrate 112.Second connection pad 116 is disposed in the substrate 112 and is arranged in 3 * 2 connection pad arrays (being illustrated in Fig. 4).First connection pad, 114 arranged in proximity are in second connection pad 116 of the 1st row of array.The 3rd connection pad 118 be disposed in the substrate 112 and arranged in proximity in array the 2nd the row second connection pad 116.First light-emitting diode chip for backlight unit 120 solid brilliant in or electrically be disposed on first connection pad 114 and respectively to being positioned at second connection pad 116 of the 1st row that is arranged in array.Second light-emitting diode chip for backlight unit 130 solid brilliant respectively in or electrically be disposed on second connection pad 116.In one embodiment, light-emitting diode chip for backlight unit is disposed on the connection pad as shown in Figure 2 respectively and is arranged in 3 * 3 chip arrays.
Gu brilliant each first light-emitting diode chip for backlight unit 120 on first connection pad 114 is by bonding wire 140 routings or be electrically connected to second connection pad 116 of the correspondence of the 1st row that is arranged in the connection pad array.Each second connection pad, 116 pairing second light-emitting diode chip for backlight unit 130 of the 2nd row that are arranged in the connection pad array are by bonding wire 140 routings or be electrically connected to the 3rd connection pad 118.Second connection pad, 116 pairing second light-emitting diode chip for backlight unit 130 that are arranged in the 1st row of connection pad array and j row are by bonding wire 140 routings or be electrically connected to the 2nd row that is arranged in array and second connection pad 116 of j row.The scope of described j is decided to be 1≤j≤3.
Under configuration mode as package structure for LED 100, even first light-emitting diode chip for backlight unit 120 and second light-emitting diode chip for backlight unit 130 are rectilinear (illustrating to rectilinear), being arranged in second light-emitting diode chip for backlight unit 130 of same row of chip array and corresponding first light-emitting diode chip for backlight unit 120 can be by bonding wire 140 and connection pad series connection, to reduce the required drive current of package structure for LED 100.First light-emitting diode chip for backlight unit 120 electrically connects in the mode of connecting with second light-emitting diode chip for backlight unit 130.In addition, therefore the length of bonding wire 140 can shorten to avoid bonding wire 140 fractures, to stay and cross first light-emitting diode chip for backlight unit 120 and second light-emitting diode chip for backlight unit, 130 tops, to promote the reliability and the optical quality of package structure for LED 100.In one embodiment, LED package is used for load level formula (horizontal type) light-emitting diode chip for backlight unit with substrate 110.Described horizontal light-emitting diode chip for backlight unit comprises two electrodes that are positioned at its same surface.
Specifically, each second connection pad 116 have for the second corresponding light-emitting diode chip for backlight unit 130 carry out solid crystalline substance crystal bonding area 116a (being illustrated in Fig. 4), carry out the routing district 116b of routing and the groove 116c between crystal bonding area 116a and routing district 116b for corresponding bonding wire 140.By form groove 116c between crystal bonding area 116a and routing district 116b, the sealing that can avoid being used for each second light-emitting diode chip for backlight unit 130 is overflow glue to corresponding routing district 116b, so that each routing district 116b positively is electrically connected at corresponding bonding wire 140.
The routing district 116b of second connection pad 116 that is arranged in the 2nd row of connection pad array and the 2nd row is between the crystal bonding area 116b of the crystal bonding area 116b of second connection pad 116 of the 2nd row that is arranged in the connection pad array and the 2nd row and the 1st row that is arranged in the connection pad array and the 2nd second connection pad 116 that is listed as.The crystal bonding area 116a of second connection pad 116 of the 1st row that is arranged in the connection pad array is between the routing district 116b of second connection pad 116 of the 1st row that are arranged in the connection pad array and the 2nd second connection pad 116 that is listed as that is arranged in the connection pad array.The crystal bonding area 116a of second connection pad 116 of the 3rd row that is arranged in the connection pad array is between the routing district 116b of second connection pad 116 of the 3rd row that are arranged in the connection pad array and the 2nd second connection pad 116 that is listed as that is arranged in the connection pad array.By this, can really make each bonding wire 140 can not cross first light-emitting diode chip for backlight unit 120 and second light-emitting diode chip for backlight unit, 130 tops.
In addition, be different from the crystal bonding area 116a of the 2nd second connection pad 116 that is listed as that is positioned at the connection pad array and the relative position of routing district 116b owing to be positioned at the 1st row of connection pad array and the crystal bonding area 116a of the 3rd second connection pad 116 that is listed as and the relative position of routing district 116b, therefore the routing district 116b that is arranged in each second connection pad 116 of the 1st row of connection pad array and the 3rd row can be between two light-emitting diode chip for backlight unit, and be arranged in the routing district 116b of each second connection pad 116 of the 2nd row of connection pad array can be between two light-emitting diode chip for backlight unit.By this, first light-emitting diode chip for backlight unit 120 and second light-emitting diode chip for backlight unit 130 are concentrated on the middle section of substrate 112, and can dwindle the scope of the fluorescent material coating that package structure for LED 100 is carried out, to save manufacturing cost.In the 1st row of connection pad array, routing district 116b is positioned at the upside of crystal bonding area 116a.In the 3rd row of connection pad array, routing district 116b is positioned at the downside of crystal bonding area 116a.In the 2nd row of connection pad array, routing district 116b is positioned at the left side of crystal bonding area 116a.In one embodiment, in the 2nd row of connection pad array, routing district 116b can be configured in the right side of crystal bonding area 116a.
Please refer to Fig. 2 and Fig. 3, package structure for LED 100 more comprises lens 150, saturating border 150 covers first light-emitting diode chip for backlight unit 120 and second light-emitting diode chip for backlight unit 130, and the optical axis of second connection pad, 116 pairing second light-emitting diode chip for backlight unit 130 that is arranged in the 1st row of connection pad array and the 2nd row is to being positioned at the optical axis of lens 150.In other words, be arranged in the 2nd row of chip array and the 2nd row and the optical axis of light-emitting diode chip for backlight unit that is positioned at central authorities to being positioned at the optical axis of lens 150, so that package structure for LED 100 has better optical quality.In one embodiment, lens 150 can be the packing colloid that forms by pressing mold processing procedure (molding process).The material of lens 150 can be silicon (silicon).In one embodiment, package structure for LED 100 more comprises phosphor powder layer (phosphor layer) 135, phosphor powder layer 135 is disposed between light-emitting diode chip for backlight unit and the lens 150, to cover first light-emitting diode chip for backlight unit 120 and second light-emitting diode chip for backlight unit 130.Phosphor powder layer 135 can comprise yellow fluorescent powder, red fluorescence powder, green emitting phosphor or be selected from two the combination at least wherein of yellow fluorescent powder, red fluorescence powder and green emitting phosphor.
Fig. 5 is the end view of the package structure for LED of Fig. 2.Fig. 6 is the upward view of the package structure for LED of Fig. 2.Please refer to Fig. 3, Fig. 5 and Fig. 6, package structure for LED 100 more comprises heat conductive pad 160, at least one first electrode 170 (illustrate is two) and at least one second electrode 180 (illustrate is two).Substrate 112 has opposite first 112a and second surface 112b.In one embodiment, first surface 112a and second surface 112b can be respectively end face and bottom surface.Heat conductive pad 160 is disposed at second surface 112b.First electrode 170 is disposed at second surface 112b and the internal circuit by substrate 112, pin inserts (pin through hole) or connector (plug) is electrically connected at first connection pad 114.Second electrode 180 is disposed at second surface 112b and the internal circuit by substrate 112, pin inserts (pin through hole) or connector (plug) is electrically connected at the 3rd connection pad 118.
In the present embodiment, the material of substrate 112 is ceramic or other has the material that is electrically insulated of high-termal conductivity, is electrically connected to first connection pad 160 and second connection pad 170 to avoid heat conductive pad 160, and promotes the radiating efficiency of light-emitting diode 100.By heat conductive pad 160, first electrode 170 and second electrode 180 being disposed in the lump the second surface 112b of substrate 112, can dwindle the volume of package structure for LED 100 and simplify its processing procedure.The formation method of heat conductive pad 160, first electrode 170 and second electrode 180 is for example for electroplating (electroplating), electroless-plating (electroless plating), printing (printing) or other proper method.
Please refer to Fig. 5, package structure for LED 100 is disposed at the lighting device 60 that comprises package structure for LED 100 and pedestal 200 on the pedestal 200 with formation.Heat conductive pad 160 contact pedestals 60 with heat conduction that package structure for LED 100 is produced to pedestal 200.For instance, substrate 112 and heat conductive pad 160 are that (surface-mount technology SMT) is disposed at pedestal 200 by the surface stuck encapsulation.In one embodiment, pedestal 200 can be flexible circuit board (flexible circuit board, FCB) or printed circuit board (PCB) (printed circuit board, PCB).
In the present embodiment, first light-emitting diode chip for backlight unit 120 and second light-emitting diode chip for backlight unit 130 comprise two the combination at least wherein of white light emitting diode chip, blue LED chip, red light-emitting diode chip, green light LED chip or white light emitting diode chip, blue LED chip, red light-emitting diode chip and green light LED chip, so that lighting device 60 is suitable for sending white light or colourama.
The present invention does not limit the quantity of first light-emitting diode chip for backlight unit 120 and second light-emitting diode chip for backlight unit 130.Fig. 7 is the vertical view of the package structure for LED of another embodiment of the present invention.Fig. 8 is the vertical view of the LED package of Fig. 7 with substrate.Please refer to Fig. 7 and Fig. 8, the package structure for LED 300 of present embodiment comprises LED package substrate 310, a plurality of first light-emitting diode chip for backlight unit 320, a plurality of second light-emitting diode chip for backlight unit 330 and many bonding wires 340.LED package comprises substrate 312, first connection pad 314, a plurality of second connection pad 316 and one the 3rd connection pad 318 with substrate 310.In one embodiment, substrate 312 has end face, and first connection pad 314 is disposed at the left area of the end face of substrate 312.The 3rd connection pad 118 is disposed at the zone, the right of the end face of substrate 312.Second connection pad 316 is disposed at the zone line of the end face of substrate 312.Second connection pad 316 is disposed between first connection pad 314 and the 3rd connection pad 318.In another embodiment, connection pad can be conductive electrode.In other embodiments, bonding wire can be electric wire.Substrate can be base plate (submount), carries seat (carrier) or circuit board.
First connection pad 314 is disposed at substrate 312.Second connection pad 316 is disposed at substrate 312 and is arranged in the connection pad array (being illustrated in Fig. 8) of n * (n-1), and wherein n is a positive integer.First connection pad, 314 arranged in proximity are in second connection pad 316 of the 1st row of connection pad array.The 3rd connection pad 318 be disposed in the substrate 312 and arranged in proximity in the second capable connection pad 316 of the n-1 of connection pad array.First light-emitting diode chip for backlight unit 320 is solid brilliant in first connection pad 314 and respectively to being positioned at second connection pad 316 of the 1st row that is arranged in the connection pad array.Second light-emitting diode chip for backlight unit 330 is solid respectively brilliant in second connection pad 316.In one embodiment, light-emitting diode chip for backlight unit is disposed at connection pad respectively and is arranged in n * n chip array of Fig. 7.
Each first light-emitting diode chip for backlight unit 320 is by bonding wire 340 routings or be electrically connected to second connection pad 316 of the correspondence of the 1st row that is arranged in the connection pad array.Be arranged in each capable second connection pad, 316 pairing second light-emitting diode chip for backlight unit 330 of the n-1 of connection pad array by bonding wire 340 routings or be electrically connected to the 3rd connection pad 318.Second connection pad, 316 pairing second light-emitting diode chip for backlight unit 330 that are arranged in the capable and j row of the i of connection pad array are by bonding wire 340 routings or be electrically connected to second connection pad 316 of the capable and j row of the i+1 that is arranged in the connection pad array.The scope of described i and j is decided to be 1≤i≤n-2 and 1≤j≤n.
Under configuration mode as package structure for LED 300, even first light-emitting diode chip for backlight unit 320 and second light-emitting diode chip for backlight unit 330 are rectilinear (illustrating to rectilinear), being arranged in second light-emitting diode chip for backlight unit 330 of same row of chip array and corresponding first light-emitting diode chip for backlight unit 320 can be by bonding wire 340 and connection pad series connection, to reduce the required drive current of package structure for LED 300.First light-emitting diode chip for backlight unit 320 electrically connects in the mode of connecting with second light-emitting diode chip for backlight unit 330.In addition, therefore the length of bonding wire 340 can shorten to avoid bonding wire 340 fractures, to stay and cross first light-emitting diode chip for backlight unit 320 and second light-emitting diode chip for backlight unit, 330 tops, to promote the reliability and the optical quality of package structure for LED 300.In one embodiment, LED package is used for load level formula (horizontal type) light-emitting diode chip for backlight unit with substrate 310.Described horizontal light-emitting diode chip for backlight unit comprises two electrodes that are positioned at its same surface.
Specifically, each second connection pad 316 have for the second corresponding light-emitting diode chip for backlight unit 330 carry out solid crystalline substance crystal bonding area 316a (being illustrated in Fig. 8), carry out the routing district 316b of routing and the groove 316c between crystal bonding area 316a and routing district 316b for corresponding bonding wire 340.By form groove 316c between crystal bonding area 316a and routing district 316b, the sealing that can avoid being used for each second light-emitting diode chip for backlight unit 330 is overflow glue to corresponding routing district 316b, so that each routing district 316b positively is electrically connected at corresponding bonding wire 340.
Be arranged between the crystal bonding area 316b of the crystal bonding area 316b of second connection pad 316 of the routing district 316b of second connection pad 316 of the capable and j row of the i+1 of connection pad array and j row capable and second connection pad 316 that j is listed as capable, wherein 1≤i≤n-2 and 1≤j≤n with the i that is arranged in the connection pad array at the i+1 that is arranged in the connection pad array.The crystal bonding area 316a of second connection pad 316 of the 1st row that is arranged in the connection pad array is between the routing district 316b of the 1st row that are arranged in the connection pad array and the 2nd second connection pad 316 that is listed as that is arranged in the connection pad array.The crystal bonding area 316a of second connection pad 316 of n row that is arranged in the connection pad array is between second connection pad 316 that the routing district 316b of the n row that are arranged in the connection pad array and the n-1 that is arranged in the connection pad array are listed as.By this, can really make each bonding wire 340 can not cross first light-emitting diode chip for backlight unit 320 and second light-emitting diode chip for backlight unit, 330 tops.
In addition, be different from the crystal bonding area 316a of second connection pad 316 that the 2nd row that are positioned at the connection pad array are listed as to n-1 and the relative position of routing district 316b owing to be positioned at the relative position of crystal bonding area 316a and routing district 316b of second connection pad 316 of the 1st row of connection pad array and n row, therefore the routing district 316b that is arranged in each second connection pad 316 of the 1st row of connection pad array and n row can be between two light-emitting diode chip for backlight unit, and the 2nd row that are arranged in the connection pad array to the routing district 316b of each second connection pad 316 of n-1 row can be between two light-emitting diode chip for backlight unit.By this, first light-emitting diode chip for backlight unit 320 and second light-emitting diode chip for backlight unit 330 are concentrated on the middle section of substrate 312, and can dwindle the scope of the fluorescent material coating that package structure for LED 300 is carried out, to save manufacturing cost.In the 1st row of connection pad array, routing district 316b is positioned at the upside of crystal bonding area 316a.In the n of connection pad array row, routing district 316b is positioned at the downside of crystal bonding area 316a.In the 2nd row of connection pad array were listed as to n-1, routing district 316b was positioned at the left side of crystal bonding area 316a.In one embodiment, in the 2nd row of connection pad array were listed as to n-1, routing district 316b can be configured in the right side of crystal bonding area 316a.
Please refer to Fig. 7, package structure for LED 300 more comprises lens 350, saturating border 350 covers first light-emitting diode chip for backlight unit 320 and second light-emitting diode chip for backlight unit 330, and the optical axis of second connection pad, 316 pairing second light-emitting diode chip for backlight unit 330 that is arranged in (n-1)/2 row of connection pad array and (n+1)/2 row is to being positioned at the optical axis of lens 350.In other words, be arranged in (n-1)/2 row of chip array and (n+1)/2 row and the optical axis of light-emitting diode chip for backlight unit that is positioned at central authorities to being positioned at the optical axis of lens 350, so that package structure for LED 300 has better optical quality.In one embodiment, lens 350 can be the packing colloid that forms by pressing mold processing procedure (molding process).The material of lens 350 can be silicon (silicon).In one embodiment, package structure for LED 300 more comprises phosphor powder layer (phosphor layer), and phosphor powder layer is disposed between light-emitting diode chip for backlight unit and the lens, to cover first light-emitting diode chip for backlight unit 320 and second light-emitting diode chip for backlight unit 330.Phosphor powder layer can comprise yellow fluorescent powder, red fluorescence powder, green emitting phosphor or be selected from two the combination at least wherein of yellow fluorescent powder, red fluorescence powder and green emitting phosphor.
Package structure for LED 300 more comprises heat conductive pad, at least one first electrode and at least one second electrode.Substrate 312 has opposite first and second surface.In one embodiment, first surface and second surface can be respectively end face and bottom surface.Heat conductive pad is disposed at second surface.First electrode is disposed at second surface and the internal circuit by substrate 312, pin inserts (pin through hole) or connector (plug) is electrically connected at first connection pad 314.Second electrode is disposed at second surface and the internal circuit by substrate 312, pin inserts (pin through hole) or connector (plug) is electrically connected at the 3rd connection pad 318.
In the present embodiment, the material of substrate 312 is ceramic or other has the material that is electrically insulated of high-termal conductivity, is electrically connected to first connection pad and second connection pad to avoid heat conductive pad, and promotes the radiating efficiency of light-emitting diode 300.By heat conductive pad, first electrode and second electrode being disposed in the lump the second surface of substrate 312, can dwindle the volume of package structure for LED 300 and simplify its processing procedure.The formation method of heat conductive pad, first electrode and second electrode is for example for electroplating (electroplating), electroless-plating (electroless plating), printing (printing) or other proper method.
The package structure for LED 300 configurable lighting devices that on pedestal, comprise package structure for LED and pedestal with formation.Heat conductive pad contact pedestal with heat conduction that package structure for LED 300 is produced to pedestal.For instance, substrate 312 and heat conductive pad are that (surface-mount technology SMT) is disposed at pedestal by the surface stuck encapsulation.In one embodiment, pedestal can be flexible circuit board (flexible circuit board, FCB) or printed circuit board (PCB) (printed circuit board, PCB).
In the present embodiment, first light-emitting diode chip for backlight unit 320 and second light-emitting diode chip for backlight unit 330 comprise two the combination at least wherein of white light emitting diode chip, blue LED chip, red light-emitting diode chip, green light LED chip or white light emitting diode chip, blue LED chip, red light-emitting diode chip and green light LED chip, so that lighting device is suitable for sending white light or colourama.
In one embodiment, above-mentioned package structure for LED more can be applied on automobile-used illumination, TV and the products such as display backlight module, room lighting, outdoor lighting and billboards.
In one embodiment, except n is capable, be arranged in the light-emitting diode chip for backlight unit of the 2nd row to the n-1 row, the light-emitting diode chip for backlight unit routing on the left side is to the routing district, left side in small electrode zone, the small electrode zone has the right side crystal bonding area, and the light-emitting diode chip for backlight unit on right side is solid brilliant in the right side crystal bonding area.Channel shaped is formed between the routing district, left side and right side crystal bonding area in small electrode zone.
In one embodiment, except n was capable, at the light-emitting diode chip for backlight unit that is arranged in the 1st row, the light-emitting diode chip for backlight unit routing on the left side was to the upside routing district in small electrode zone, the small electrode zone has the downside crystal bonding area, and the light-emitting diode chip for backlight unit on right side is solid brilliant in the downside crystal bonding area.Channel shaped is formed between the upside routing district and downside crystal bonding area in small electrode zone.
In one embodiment, except n was capable, at the light-emitting diode chip for backlight unit that is arranged in the n row, the light-emitting diode chip for backlight unit routing on the left side was to the downside routing district in small electrode zone, the small electrode zone has the upside crystal bonding area, and the light-emitting diode chip for backlight unit on right side is solid brilliant in the upside crystal bonding area.Channel shaped is formed between the downside routing district and upside crystal bonding area in small electrode zone.
In sum, package structure for LED of the present invention has a plurality of second connection pads, and second connection pad is arranged in array and between the first and the 3rd connection pad.Even first and second light-emitting diode chip for backlight unit is rectilinear, second light-emitting diode chip for backlight unit and the first corresponding light-emitting diode chip for backlight unit that are arranged in the same row of array can be connected by bonding wire, to reduce the required drive current of package structure for LED.In addition, therefore the length of bonding wire can shorten to avoid the bonding wire fracture, to stay and cross the light-emitting diode chip for backlight unit top, to promote the reliability and the optical quality of package structure for LED.In addition, by forming groove between crystal bonding area and routing district, the sealing that can avoid being used for each second light-emitting diode chip for backlight unit is overflow glue to corresponding routing district, so that each routing district positively is electrically connected at corresponding bonding wire.
Though the present invention discloses as above with embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the invention; when doing a little change and retouching, so protection scope of the present invention is worked as with being as the criterion that claim was defined.