CN102227001B - 一种锗基nmos器件及其制备方法 - Google Patents
一种锗基nmos器件及其制备方法 Download PDFInfo
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- CN102227001B CN102227001B CN2011101709914A CN201110170991A CN102227001B CN 102227001 B CN102227001 B CN 102227001B CN 2011101709914 A CN2011101709914 A CN 2011101709914A CN 201110170991 A CN201110170991 A CN 201110170991A CN 102227001 B CN102227001 B CN 102227001B
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- germanium
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- metal oxide
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- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 35
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 35
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 22
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000004065 semiconductor Substances 0.000 title abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 14
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 12
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical group [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 10
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 8
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical compound [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- PLEZGBHMSVTPPQ-UHFFFAOYSA-N [O-2].[Ra+2] Chemical compound [O-2].[Ra+2] PLEZGBHMSVTPPQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229940119177 germanium dioxide Drugs 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- XCNHXROWMVKLEB-UHFFFAOYSA-N [Ge+2].[O-2].[O-2].[Ti+4] Chemical compound [Ge+2].[O-2].[O-2].[Ti+4] XCNHXROWMVKLEB-UHFFFAOYSA-N 0.000 claims 3
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 230000004888 barrier function Effects 0.000 abstract description 14
- 238000005516 engineering process Methods 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 4
- 239000003989 dielectric material Substances 0.000 abstract description 4
- 229910052710 silicon Inorganic materials 0.000 abstract description 4
- 239000010703 silicon Substances 0.000 abstract description 4
- 230000000295 complement effect Effects 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 6
- 238000000231 atomic layer deposition Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000037230 mobility Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000001105 regulatory effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- -1 germanium metal compound Chemical class 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100204059 Caenorhabditis elegans trap-2 gene Proteins 0.000 description 1
- 241000027294 Fusi Species 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002146 bilateral effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 208000018875 hypoxemia Diseases 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000007521 mechanical polishing technique Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0895—Tunnel injectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66643—Lateral single gate silicon transistors with source or drain regions formed by a Schottky barrier or a conductor-insulator-semiconductor structure
Abstract
Description
Claims (8)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011101709914A CN102227001B (zh) | 2011-06-23 | 2011-06-23 | 一种锗基nmos器件及其制备方法 |
PCT/CN2012/071390 WO2012174871A1 (zh) | 2011-06-23 | 2012-02-21 | 一种锗基nmos器件及其制备方法 |
US13/580,971 US8865543B2 (en) | 2011-06-23 | 2012-02-21 | Ge-based NMOS device and method for fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN2011101709914A CN102227001B (zh) | 2011-06-23 | 2011-06-23 | 一种锗基nmos器件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN102227001A CN102227001A (zh) | 2011-10-26 |
CN102227001B true CN102227001B (zh) | 2013-03-06 |
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CN2011101709914A Active CN102227001B (zh) | 2011-06-23 | 2011-06-23 | 一种锗基nmos器件及其制备方法 |
Country Status (3)
Country | Link |
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US (1) | US8865543B2 (zh) |
CN (1) | CN102227001B (zh) |
WO (1) | WO2012174871A1 (zh) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
CN102227001B (zh) * | 2011-06-23 | 2013-03-06 | 北京大学 | 一种锗基nmos器件及其制备方法 |
CN104170058B (zh) | 2011-11-23 | 2017-08-08 | 阿科恩科技公司 | 通过插入界面原子单层改进与iv族半导体的金属接触 |
CN103137460B (zh) * | 2011-11-23 | 2016-02-10 | 中国科学院微电子研究所 | 一种分子尺度界面SiO2的形成和控制方法 |
CN102655112B (zh) * | 2012-04-18 | 2014-08-06 | 北京大学 | 实现锗基mos器件有源区之间隔离的方法 |
CN102881562A (zh) * | 2012-10-11 | 2013-01-16 | 北京大学 | 一种锗基衬底的表面钝化方法 |
CN102903625B (zh) * | 2012-10-18 | 2015-11-04 | 北京大学 | 锗基衬底表面钝化方法 |
KR20140121617A (ko) * | 2013-04-08 | 2014-10-16 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
WO2015029535A1 (ja) * | 2013-08-30 | 2015-03-05 | 独立行政法人科学技術振興機構 | ゲルマニウム層上に酸化ゲルマニウムを含む膜を備える半導体構造およびその製造方法 |
CN103646865A (zh) * | 2013-12-25 | 2014-03-19 | 中国科学院微电子研究所 | 在Ge衬底制备超薄氧化锗界面修复层的方法 |
US9449885B1 (en) | 2015-06-19 | 2016-09-20 | International Business Machines Corporation | High germanium content FinFET devices having the same contact material for nFET and pFET devices |
CN105336694B (zh) * | 2015-10-13 | 2018-03-30 | 北京大学 | 一种锗基cmos的制备方法 |
US10068981B2 (en) * | 2016-03-02 | 2018-09-04 | Lam Research Corporation | Rare earth metal surface-activated plasma doping on semiconductor substrates |
US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
US10170627B2 (en) | 2016-11-18 | 2019-01-01 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
US10797137B2 (en) | 2017-06-30 | 2020-10-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height |
US11133226B2 (en) | 2018-10-22 | 2021-09-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | FUSI gated device formation |
CN111463133B (zh) * | 2020-04-17 | 2023-01-17 | 中国科学院微电子研究所 | Ge基NMOS晶体管及其制作方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6235568B1 (en) * | 1999-01-22 | 2001-05-22 | Intel Corporation | Semiconductor device having deposited silicon regions and a method of fabrication |
US6782610B1 (en) * | 1999-05-21 | 2004-08-31 | North Corporation | Method for fabricating a wiring substrate by electroplating a wiring film on a metal base |
JP3648466B2 (ja) | 2001-06-29 | 2005-05-18 | 株式会社東芝 | 電界効果トランジスタ、半導体基板、電界効果トランジスタの製造方法及び半導体基板の製造方法 |
US6833556B2 (en) * | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
JP2005026563A (ja) * | 2003-07-04 | 2005-01-27 | Renesas Technology Corp | 半導体装置 |
CN1886826A (zh) * | 2003-10-22 | 2006-12-27 | 斯平内克半导体股份有限公司 | 动态肖特基势垒mosfet器件及其制造方法 |
US7598134B2 (en) * | 2004-07-28 | 2009-10-06 | Micron Technology, Inc. | Memory device forming methods |
JP4940682B2 (ja) * | 2005-09-09 | 2012-05-30 | 富士通セミコンダクター株式会社 | 電界効果トランジスタおよびその製造方法 |
US7700452B2 (en) * | 2007-08-29 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained channel transistor |
FR2921750B1 (fr) * | 2007-10-02 | 2014-07-25 | Commissariat Energie Atomique | Formation selective d'un compose comprenant un materiau semi-conducteur et un materiau metallique dans un substrat, a travers une couche d'oxyde de germanium |
KR101527535B1 (ko) * | 2008-10-21 | 2015-06-10 | 삼성전자주식회사 | 반도체 소자의 형성 방법 |
CN101866953B (zh) * | 2010-05-26 | 2012-08-22 | 清华大学 | 低肖特基势垒半导体结构及其形成方法 |
CN102227001B (zh) * | 2011-06-23 | 2013-03-06 | 北京大学 | 一种锗基nmos器件及其制备方法 |
-
2011
- 2011-06-23 CN CN2011101709914A patent/CN102227001B/zh active Active
-
2012
- 2012-02-21 WO PCT/CN2012/071390 patent/WO2012174871A1/zh active Application Filing
- 2012-02-21 US US13/580,971 patent/US8865543B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN102227001A (zh) | 2011-10-26 |
US8865543B2 (en) | 2014-10-21 |
WO2012174871A1 (zh) | 2012-12-27 |
US20140117465A1 (en) | 2014-05-01 |
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