CN102254815A - Etching method for conducting layer during preparation of semiconductor device - Google Patents
Etching method for conducting layer during preparation of semiconductor device Download PDFInfo
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- CN102254815A CN102254815A CN2011101870658A CN201110187065A CN102254815A CN 102254815 A CN102254815 A CN 102254815A CN 2011101870658 A CN2011101870658 A CN 2011101870658A CN 201110187065 A CN201110187065 A CN 201110187065A CN 102254815 A CN102254815 A CN 102254815A
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- conductive layer
- semiconductor device
- layer
- preparation process
- lithographic method
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Priority Applications (1)
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CN2011101870658A CN102254815A (en) | 2011-07-05 | 2011-07-05 | Etching method for conducting layer during preparation of semiconductor device |
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CN2011101870658A CN102254815A (en) | 2011-07-05 | 2011-07-05 | Etching method for conducting layer during preparation of semiconductor device |
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CN102254815A true CN102254815A (en) | 2011-11-23 |
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CN2011101870658A Pending CN102254815A (en) | 2011-07-05 | 2011-07-05 | Etching method for conducting layer during preparation of semiconductor device |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5324683A (en) * | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
US20020000629A1 (en) * | 2000-06-21 | 2002-01-03 | Kim Tae Kyun | MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thickness |
CN1405797A (en) * | 2001-08-03 | 2003-03-26 | 雅马哈株式会社 | Method for forming noble metal film pattern |
JP2007013128A (en) * | 2005-05-31 | 2007-01-18 | Semiconductor Energy Lab Co Ltd | Manufacturing method for semiconductor device |
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2011
- 2011-07-05 CN CN2011101870658A patent/CN102254815A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5324683A (en) * | 1993-06-02 | 1994-06-28 | Motorola, Inc. | Method of forming a semiconductor structure having an air region |
US20020000629A1 (en) * | 2000-06-21 | 2002-01-03 | Kim Tae Kyun | MOSFET device fabrication method capable of allowing application of self-aligned contact process while maintaining metal gate to have uniform thickness |
CN1405797A (en) * | 2001-08-03 | 2003-03-26 | 雅马哈株式会社 | Method for forming noble metal film pattern |
JP2007013128A (en) * | 2005-05-31 | 2007-01-18 | Semiconductor Energy Lab Co Ltd | Manufacturing method for semiconductor device |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140428 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140428 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20111123 |
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WD01 | Invention patent application deemed withdrawn after publication |