CN102255238A - Packaging structure of semiconductor laser device and application device thereof - Google Patents
Packaging structure of semiconductor laser device and application device thereof Download PDFInfo
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- CN102255238A CN102255238A CN2010102850568A CN201010285056A CN102255238A CN 102255238 A CN102255238 A CN 102255238A CN 2010102850568 A CN2010102850568 A CN 2010102850568A CN 201010285056 A CN201010285056 A CN 201010285056A CN 102255238 A CN102255238 A CN 102255238A
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Abstract
The invention relates to a packaging structure of a semiconductor laser device and an application device thereof. The packaging structure of the semiconductor laser device comprises a semiconductor laser chip and a heat sink. The semiconductor laser chip comprises a front cavity surface, a rear cavity surface, a positive electrode surface and a negative electrode surface. The semiconductor laser chip is provided with three axes, namely an optical axis, a fast axis and a slow axis respectively. The optical axis points to the front cavity surface from the rear cavity surface. The fast axis is vertical to the positive electrode surface and the negative electrode surface. The slow axis is vertical to the optical axis and the fast axis. The heat sink comprises at least two mutually vertical surfaces, namely a sealing and welding surface of the chip and an installation surface of the heat sink. The sealing and welding surface is used for sealing and welding the semiconductor laser chip. The installation surface is used for fixing the semiconductor laser device. A sealing and welding position of the semiconductor laser chip is selected to ensure that the fast axis of the semiconductor laser chip is vertical to the sealing and welding surface and the slow axis is vertical to the installation surface, that is to say, the fast axis and the optical axis of the semiconductor laser are parallel to the installations surface.
Description
Technical field
The present invention relates to a kind of encapsulating structure and application apparatus thereof of semiconductor laser, belong to the applied technical field of semiconductor laser.
Background technology
The high power high luminance semiconductor laser is widely used in fields such as industry, medical treatment, printing, scientific research, illumination, laser display, military affairs and national defence, be not only the pumping source of solid state lasers such as YAG and optical-fiber laser, and can directly apply to LASER HEAT TREATMENT, welding and cutting metal thin plate and nonmetal, laser surgey, laser beautifying, laser printing and row's photograph, laser night vision illumination, laser projection etc.Two approach that realize high-power semiconductor laser are arranged in the prior art: the one, thus increase the power output of monolithic semiconductor laser by improving the chip growing technology; The 2nd, thus gross output improved by the number that increases the semiconductor laser luminescence chip.When single-chip output operates at Limiting Level, seem extremely important by the number that increases chip.The product that increases semiconductor laser luminescence chip number has the folded battle array of level, vertical folded battle array and face battle array etc.Yet the increase of semiconductor laser chip number or crust bar number causes its beam quality and power density to descend, and makes the application of semiconductor laser be very limited.The encapsulating structure of different monolithic semiconductor lasers can make up or integratedly go out different multi-chip semiconductor Optical Maser Systems, promptly uses beam shaping to realize the semiconductor laser of high power high luminance.
At present, the encapsulating structure of commercial monolithic semiconductor laser has following common version: C type (C-mount), Type B (B-mount), F type (F-mount), CT type and CS type.These single-chip package structures are except that the C type, and heat sink installed surface is vertical with the fast axle of chip; The installed surface of C type structure heat-sink is vertical with the optical axis of chip.The encapsulating structure of commercial multi-chip semiconductor laser has face battle array (as G-Stack), the folded battle array of level and vertical folded battle array etc.The installed surface that the face battle array is heat sink is vertical with the optical axis of chip; Level is vertical with the fast axle of chip with vertical folded gust of heat sink installed surface.The shortcoming of these semiconductor laser encapsulating structures is when installing and fixing the semiconductor laser of fast axis collimation, can't change the directive property of fast axis collimation light, is difficult to realize the synthetic light beam of high brightness.
U.S. Pat 5463534 discloses a kind of high power laser light source that is formed by a plurality of C type monolithic semiconductor lasers, all C type lasers are fixed on the same heat sink basal plane, each C type laser has a collimating lens that has installed in advance its laser beam is collimated, and by a prism expansion (pressure) the bundle mirror of forming is come the beam characteristics of balance fast and slow axis behind each collimating lens.In this system, each collimated light beam is parallel and perpendicular to public basal plane, helps debuging collimating lens in advance and prism is right, but also a lot of defectives is arranged.At first, the heat sink size of C type laser has determined the distribute spacing of each laser, illustrates that the size of collimating lens can't reduce, and promptly the volume of system is big; Secondly, will inevitably introduce the directive property error of collimated light when debuging collimating lens in advance, thereby it is not parallel each other to be installed on the heat sink basal plane each collimated laser beam, promptly is difficult to realize the synthesized laser beam of high brightness.
U.S. Pat 7586963 discloses a kind of device of cordwood system type semiconductor laser, and this installs by a plurality of laser constitutions, and the fast axle of the installed surface of these lasers and chip is vertical, be fixed on successively ladder heat sink on, promptly successively backward with last distribution.This device has same sensing, flexible setting advantages such as distance, compact conformation between the upper and lower, but fatal shortcoming is also arranged in actual production.In order to obtain the synthetic light beam of high brightness, require the depth of parallelism height of cascaded surface, each is the high conformity of collimated laser light bundle directive property and laser thermal sediment in advance, just each collimated laser beam that is installed in like this on the ladder can synthesize the good high brightness beam of directive property.The depth of parallelism height of cascaded surface causes precision machined cost high and rate of finished products is low, is unfavorable for large-scale production.
U.S. Pat 7733932 discloses a kind of device of Modular, semiconductor laser, contains a plurality of semiconductor lasers in this device, these semiconductor lasers be welded on ladder heat sink on, promptly laser extends about successively and staggers up and down.Laser beam behind the fast and slow axis collimation closes bundle about speculum is realized.This installs each laser beam and has same sensing, the flexible advantages such as distance, compact conformation between the upper and lower that are provided with.One of its shortcoming be exactly behind the fast axis collimation beam-pointing fix, it is high that the installation accuracy of fast axis collimation lens and speculum are installed stability requirement.
Summary of the invention
The present invention is directed to the laser beam that existing semiconductor laser array produces and on quick shaft direction, be difficult to realize collimation and parallel deficiency, a kind of semiconductor laser encapsulating structure is provided, and the semiconductor laser array that collimates with the fast and slow axis that this structure forms.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of encapsulating structure of semiconductor laser comprises semiconductor laser chip and heat sink; Described heat sinkly have at least two orthogonal, i.e. the soldering and sealing face of chip and heat sink installed surface; The soldering and sealing face of chip is used for the soldering and sealing of chip, and heat sink installed surface is used for the fixing of semiconductor laser; Perpendicular to described heat sink installed surface, promptly the fast axle and the optical axis of semiconductor laser are parallel to heat sink installed surface to the fast axle that the selection in described semiconductor laser chip soldering and sealing orientation makes chip perpendicular to the slow axis of the soldering and sealing face of described chip and chip.
The invention has the beneficial effects as follows: when installing and fixing semiconductor laser, rotate the heat sink sensing that can change fast axle and optical axis, thereby realize the directive property of fast axle of fine setting and optical axis.
Further, described heat sink two connection electrode that comprise are connected with negative pole with the positive pole of semiconductor laser chip respectively; Described heat sink combination by metal material, metallic composite or metal and nonmetallic materials is made; Described have alignment pin or location hole on heat sink.
Preferably, described metal material is a copper; Preferably, described metallic composite is a copper-tungsten; Preferably, the combination that is combined as aluminium nitride and copper of described metal and nonmetallic materials.
The sensing of described connection electrode lead-in wire can deviate from installed surface; Can deviate from optical axis simultaneously; Can be simultaneously along optical axis; Can one deviate from one along optical axis; Also can be crooked up and down.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of semiconductor laser of fast and slow axis collimation comprises the encapsulating structure of fast axis collimation lens, slow axis collimating lens and described semiconductor laser, described fast axis collimation lens be fixed on heat sink on, described fast axis collimation lens is used for the fast axle of semiconductor laser is collimated, and described slow axis collimating lens is used for the slow axis of semiconductor laser is collimated.
Adopt the beneficial effect of such scheme to be: when installing and fixing semiconductor laser, to rotate the heat sink sensing that can change fast axle and optical axis, thereby realize the beam-pointing of fine setting fast and slow axis collimation.
Further, described slow axis collimating lens comprises the first post lens and the second post lens, the described second post lens are between the first post lens and fast axis collimation lens, and the first post lens are used for the slow axis collimation, and the described second post lens are used to correct optical axis makes it parallel with heat sink installed surface.
Further, described heat sink two connection electrode that comprise are connected with negative pole with the positive pole of semiconductor laser chip respectively; Described heat sinkly make by metal material, metallic composite or nonmetal and metal material combination; Described have alignment pin or location hole on heat sink.
Preferably, described metal material is a copper; Preferably, described metallic composite is a copper-tungsten; Preferably, the combination that is combined as aluminium nitride and copper of described metal and nonmetallic materials.
The sensing of described connection electrode lead-in wire can deviate from installed surface; Can deviate from optical axis simultaneously; Can be simultaneously along optical axis; Can one deviate from one along optical axis; Also can be crooked up and down.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of one dimension semiconductor laser array of fast and slow axis collimation comprises semiconductor laser and mainboard with plane of at least two described fast and slow axis collimations; The semiconductor laser installing of described fast and slow axis collimation when installing and fixing semiconductor laser, is rotated heat sink making through fast and slow axis collimated laser light bundle and is parallel to each other on described mainboard; Described semiconductor laser staggers successively at the fast axle and the optical axis both direction of semiconductor laser chip, and the distance that described semiconductor laser staggers on the semiconductor laser chip quick shaft direction is 0.2～2mm; The distance that described semiconductor laser staggers on the semiconductor laser chip optical axis direction is 6～30mm.
Adopt the beneficial effect of such scheme to be: when installing and fixing semiconductor laser, rotate the heat sink sensing that can change fast axle and optical axis, promptly finely tune the beam-pointing of fast and slow axis collimation, make each fast and slow axis collimated laser light point to predetermined direction, realize the synthetic light beam of high brightness.
Further, described mainboard with plane can be the cabinet of laser, also can be the heat sink of concrete refrigerating function.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of two-dimensional semiconductor laser array of fast and slow axis collimation includes the one dimension semiconductor laser array of at least two described fast and slow axis collimations, described one dimension semiconductor laser array is installed on the different planes, successively along the semiconductor laser chip slow-axis direction certain distance that staggers, it is apart from the length of size greater than slow axis collimation hot spot, and the size of distance is 4～20mm; At quick shaft direction, described one dimension semiconductor laser array staggers successively, and the size that staggers is 0.5～10mm, and the one dimension semiconductor laser array that staggers successively makes to have the gap between the collimation hot spot of one dimension semiconductor laser array, the gap is more little, and two-dimensional array is compact more.
The technical scheme that the present invention solves the problems of the technologies described above is as follows: a kind of two-dimensional semiconductor laser array of fast and slow axis collimation comprises that one has the mainboard of cascaded surface and the semiconductor laser of at least two described fast and slow axis collimations, the semiconductor laser of described fast and slow axis collimation is fixed on the cascaded surface successively, when installing and fixing semiconductor laser, rotate heat sink making and be parallel to each other through fast and slow axis collimated laser light bundle; On same cascaded surface, described semiconductor laser staggers successively at fast axle and optical axis both direction, determine by the focal length of fast axis collimation lens along the distance that quick shaft direction staggers, its size is bigger slightly than fast axis collimation spot width, be 0.2～2mm, being determined by the thickness of semiconductor laser chip length, fast axis collimation lens and heat sink size along the distance that optical axis direction staggers, is 6～30mm; On different cascaded surfaces, the distance that adjacent semiconductor laser staggers along quick shaft direction is 0.5～10mm; The spacing size of described cascaded surface is bigger slightly than the length of slow axis collimation hot spot, is 4～20mm.
Adopt the beneficial effect of such scheme to be: when installing and fixing semiconductor laser, rotate the heat sink sensing that can change fast axle and optical axis, promptly finely tune the beam-pointing of fast and slow axis collimation, make each fast and slow axis collimated laser light point to predetermined direction, realize the synthetic light beam of high brightness.
Further, described mainboard with cascaded surface is the cabinet of laser or has the heat sink of refrigerating function.
Description of drawings
Fig. 1 is the structural representation of semiconductor laser chip of the present invention;
Fig. 2 is the structural representation of semiconductor laser of the present invention;
Fig. 3 is the structural representation of the embodiment of the invention 1 semiconductor laser;
Fig. 4 is the structural representation of the embodiment of the invention 2 semiconductor lasers;
Fig. 5 is the semiconductor laser schematic diagram of the embodiment of the invention 3 fast and slow axis collimation;
Fig. 6 is the collimation hot spot schematic diagram of Fig. 5;
Fig. 7 is the one dimension semiconductor laser array schematic diagram of the embodiment of the invention 4 fast and slow axis collimation;
Fig. 8 is the collimation hot spot schematic diagram of Fig. 7;
Fig. 9 is the two-dimensional semiconductor laser array schematic diagram of the embodiment of the invention 5 fast and slow axis collimation;
Figure 10 is the collimation hot spot schematic diagram of Fig. 9;
Figure 11 is the hot spot redistribution schematic diagram of Figure 10.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Embodiment 1: semiconductor laser
As shown in Figure 1, semiconductor laser chip 10 has four crucial faces, and they are respectively front facet (being the output cavity face) 11 and rear facet 12, top 13 and following 14.For efficiently radiates heat, 14 be positive pole-face below usually, above 13 be the negative pole face.Semiconductor laser chip 10 has three axles, and they are respectively optical axis Z, promptly points to front facet 11 by rear facet 12; Fast axle Y, it is perpendicular to the power-on and power-off pole-face; Slow axis X, it is perpendicular to the YZ axle.The light beam that semiconductor laser sent dispersion angle on quick shaft direction is big, needs special microtrabeculae lens to fast axis collimation usually; The dispersion angle of light beam on slow-axis direction is little, and the slow axis collimating lens is generally common post lens.
As shown in Figure 2, semiconductor laser 20 includes semiconductor laser chip 10 and heat sink 21, heat sink 21 at least two orthogonal 22 and 23.Semiconductor laser chip 10 soldering and sealing are on face 22, and the selection in soldering and sealing orientation makes the fast axle Y of semiconductor laser perpendicular to face 22, and the slow axis X of semiconductor laser is perpendicular to face 23.Face 23 is used to install and fix semiconductor laser 20, for example, can fix semiconductor laser 20 by the hole 24 on heat sink 21 with screw.Such orientation is selected to make the optical axis Z of semiconductor laser be parallel to installed surface 23, rotates heat sink 21 during installation and can change fast axle Y and optical axis Z direction, thereby realize fine setting fast axle Y and optical axis Z function.The feature that other location usefulness can be arranged on heat sink 21 is as alignment pin or location hole.Heat sink 21 can be the fabulous metal material of thermal conductivity, as copper; Can be metallic composite, as copper-tungsten; Also can be nonmetallic materials, as aluminium nitride, beryllium oxide etc.
As shown in Figure 3, semiconductor laser 30 includes semiconductor laser chip 10 and heat sink 31, heat sink 31 at least two orthogonal 32 and 33.Be welded with a transition plate 35 on the soldering and sealing face 32, between 2mm, the material of transition plate 35 is aluminium nitride or beryllium oxide normally at 0.1mm for the thickness of transition plate 35.Semiconductor laser chip 10 soldering and sealing are on transition plate 35, and the selection in soldering and sealing orientation makes the fast axle Y of semiconductor laser perpendicular to face 32, and the slow axis X of semiconductor laser is perpendicular to face 33.Face 33 is used to install and fix semiconductor laser 30, for example, can fix semiconductor laser 30 by the hole 34 on heat sink 31 with screw.Such orientation is selected to make the optical axis Z of semiconductor laser be parallel to installed surface 33, rotates heat sink 31 during installation and can change fast axle Y and optical axis Z direction, thereby realize fine setting fast axle Y and optical axis Z.Also soldering and sealing is on face 32 for the positive electrode 36 of semiconductor laser and negative electrode 37, and the sensing of positive electrode 36 and negative electrode 37 deviates from installed surface 33; Connect positive electrode 36 and negative electrode 37 positive pole and negative pole (scheming not show) by gold thread to semiconductor laser chip.
Embodiment 2: semiconductor laser
As shown in Figure 4, semiconductor laser 40 includes semiconductor laser chip 10 and heat sink 41, heat sink 41 at least two orthogonal 42 and 43.Be welded with a transition plate 45 on the soldering and sealing face 42, between 2mm, the material of transition plate 45 is aluminium nitride or beryllium oxide normally at 0.1mm for the thickness of transition plate 45.Semiconductor laser chip 10 soldering and sealing are on transition plate 45, and the selection in soldering and sealing orientation makes the fast axle Y of semiconductor laser perpendicular to face 42, and the slow axis X of semiconductor laser is perpendicular to face 43.Face 43 is used to install and fix semiconductor laser 40, for example, can fix semiconductor laser 40 by the hole 44 on heat sink 41 with screw.Such orientation is selected to make the optical axis Z of semiconductor laser be parallel to installed surface 43, rotates heat sink 41 during installation and can change fast axle Y and optical axis Z direction, thereby realize fine setting fast axle Y and optical axis Z.Also soldering and sealing is on face 42 for the positive electrode 46 of semiconductor laser and negative electrode 47, and the sensing of positive electrode 46 and negative electrode 47 can deviate from optical axis Z simultaneously, can be simultaneously along optical axis Z, can one deviate from one along optical axis Z, and also can be crooked up and down.Connect positive electrode 46 and negative electrode 47 positive pole and negative pole (scheming not show) by gold thread to semiconductor laser chip.
Embodiment 3: the semiconductor laser of fast and slow axis collimation
As shown in Figure 5, the semiconductor laser 50 of fast and slow axis collimation includes semiconductor laser chip 10, heat sink 51, fast axis collimation lens 55, slow axis collimating lens 56.Heat sink 51 have at least two orthogonal 52 and 53.Semiconductor laser chip 10 soldering and sealing are on face 52, the selection in soldering and sealing orientation makes the fast axle Y of semiconductor laser perpendicular to face 52, and the slow axis X of semiconductor laser is perpendicular to face 53, face 53 is used to install and fix semiconductor laser 50, for example, can fix semiconductor laser 50 behind the collimation by the hole 54 on heat sink 51 with screw.The focal length selection of fast axis collimation lens 55 and slow axis collimating lens 56 equates the angle of divergence of light beam on fast and slow axis behind the collimation or is approaching.Fast axis collimation lens 55 is installed on heat sink 51 and realizes fast axis collimation.Because the focal length of fast axis collimation lens 55 is less, to the 2mm scope, the light beam behind fast axis collimation may depart from optical axis Z because of the alignment error of fast axis collimation lens 55 at 0.2mm.When laser 50 is installed, rotate heat sink 51 and can make the fast axial light line that departs from optical axis point to predetermined direction, as optical axis Z direction, thereby realize fine setting optical axis Z.Slow axis collimating lens 56 is used for the slow axis collimation, and is because the focal length of slow axis collimating lens 56 is generally longer, to the 100mm scope, very insensitive to alignment error as 10mm.Semiconductor laser chip 10 is generally 1mm to 10mm along the length of optical axis Z direction, and the optical axis Z of semiconductor laser chip 10 might not be that strictness is parallel to installed surface 53 in actual production.When the optical axis of semiconductor laser chip 10 was not parallel to installed surface 53, slow axis collimating lens 56 was decomposed into two post lens 56a and 56b.Post lens 56a is used to contribute the focal length of slow axis collimating lens 56 away from the front facet of chip 10; Post lens 56b is as far as possible near the front facet of chip 10, and the optical axis that is used to correct after slow axis collimates makes it parallel with installed surface 53.The feature that other location usefulness can be arranged on heat sink 51 is as alignment pin or location hole.Heat sink 51 can be the fabulous metal material of thermal conductivity, as copper; Can be metallic composite, as copper-tungsten; Also can be the combination of nonmetal and metal material, as the assembly of assembly, beryllium oxide and the copper of aluminium nitride and copper etc.
The angle of divergence that Figure 6 shows that collimation back fast and slow axis two directions equate or near the time semiconductor laser 50 collimation hot spot 60.The size of hot spot 60 is respectively H and L at the fast and slow axis both direction.
Embodiment 4: the one dimension semiconductor laser array of fast and slow axis collimation
As shown in Figure 7, the one dimension semiconductor laser array 70 of fast and slow axis collimation includes the semiconductor laser 50a of a mainboard 71 and a plurality of fast and slow axis collimation, 50b, 50c ... semiconductor laser 50a includes semiconductor laser chip 10a, heat sink 51a, fast axis collimation lens and slow axis collimating lens.Heat sink 51a has at least two orthogonal, i.e. the soldering and sealing face of chip 52a and heat sink installed surface 53a.Semiconductor laser chip 10a soldering and sealing is on the soldering and sealing face 52a of chip, the selection in soldering and sealing orientation makes the soldering and sealing face 52a of the fast axle Y of semiconductor laser perpendicular to chip, and the slow axis X of semiconductor laser is perpendicular to heat sink installed surface 53a, and heat sink installed surface 53a is used for the semiconductor laser 50a behind the fast and slow axis collimation is fixed on the public basal plane 72 of mainboard 71.Similarly, semiconductor laser 50b includes semiconductor laser chip, heat sink 51b, fast axis collimation lens and slow axis collimating lens.Heat sink 51b has at least two orthogonal, i.e. the soldering and sealing face of chip 52b and heat sink installed surface 53b.Semiconductor laser chip soldering and sealing is on the soldering and sealing face 52b of chip, the selection in soldering and sealing orientation makes the soldering and sealing face 52b of the fast axle Y of semiconductor laser perpendicular to chip, and the slow axis X of semiconductor laser is perpendicular to heat sink installed surface 53b, and heat sink installed surface 53b is used for the semiconductor laser 50b behind the fast and slow axis collimation is fixed on the public basal plane 72 of mainboard 71.On public basal plane 72, semiconductor laser 50a, 50b and 50c etc. once stagger successively at fast axle and optical axis both direction.The distance that quick shaft direction staggers determines that by the focal length of fast axis collimation lens its size is bigger slightly than fast axis collimation spot width H, is generally 0.2mm to 2mm; The distance that optical axis direction staggers is by semiconductor laser chip length, and the thickness of fast axis collimation lens and heat sink size are determined, be generally 6mm to 30mm.Mainboard 71 can be the cabinet of laser, also can be have refrigerating function heat sink.
The synthetic hot spot 80 of the one dimension semiconductor laser array 70 of fast and slow axis collimation as shown in Figure 8, wherein from semiconductor laser 50b, the 80c of the fast and slow axis collimation semiconductor laser 50c from the fast and slow axis collimation, the rest may be inferred from semiconductor laser 50a, the 80b of fast and slow axis collimation for 80a.
When laser 50a is installed, rotate heat sink 51a and make the fast axial light line point to predetermined direction, when laser 50b is installed, rotates heat sink 51b and make the fast axial light line point to predetermined direction, when laser 50c is installed, rotates heat sink 51c and make the fast axial light line point to predetermined direction.And the like, thereby obtain the high synthetic hot spot 80c of directive property.
Embodiment 5: the two-dimensional semiconductor laser array of fast and slow axis collimation
As shown in Figures 9 and 10, the two-dimensional semiconductor laser array 90 of fast and slow axis collimation includes at least two one dimension semiconductor laser array 91a, 91b, 91c.Each one dimension semiconductor laser array has the installation base surface of a semiconductor laser, and the installation base surface of one dimension semiconductor laser array 91a, 91b, 91c is respectively 92a, 92b, 92c. Installation base surface 92a, 92b and 92c not at grade, they are successively along the slow axis directions X certain distance that staggers, it is bigger slightly than the length L of slow axis collimation hot spot apart from size.In fast axle Y direction, one dimension semiconductor laser array 91a, 91b and 91c stagger successively, and the size that staggers makes has certain interval between collimation hot spot 101a, the 101b of one dimension semiconductor laser array 91a, 91b and 91c and the 101c.The gap is more little, and two-dimensional array 90 is compact more. Installation base surface 92a, 92b and 92c also can be the cascaded surfaces on the same mainboard, and each semiconductor laser is fixed on cascaded surface 92a, 92b and the 92c successively.Rotate the predetermined direction of beam-pointing after each semiconductor laser makes collimation when installing and fixing.
By speculum or speculum to or the prism group hot spot 100 of the two-dimensional semiconductor laser array 90 of fast and slow axis collimation is reconfigured.For example, with simple reflector one by one folded light beam 101a, 101b, 101c make its 90 degree angles of transferring, and make each beam center alignment in a fast axle Y direction.And for example, adopt speculum to or the prism group translation light beam 101a, 101b, 101c make them in the quick shaft direction center-aligned one by one in a fast axle Y direction.As shown in figure 11, can obtain the semiconductor laser light source 110 of high-power and high-lighting beam quality.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. the encapsulating structure of a semiconductor laser is characterized in that, the encapsulating structure of described semiconductor laser comprises semiconductor laser chip and heat sink; Described semiconductor laser chip comprises front facet, rear facet, positive pole-face and negative pole face, described semiconductor laser chip has three axles and is respectively optical axis, fast axle and slow axis, described optical axis points to front facet by rear facet, described fast axle is perpendicular to positive pole-face and negative pole face, and described slow axis is perpendicular to optical axis and fast axle; Described heat sinkly have at least two orthogonal, i.e. the soldering and sealing face of chip and heat sink installed surface, and the soldering and sealing face of described chip is used for the soldering and sealing of semiconductor laser chip, and described heat sink installed surface is used for the fixing of semiconductor laser; Perpendicular to heat sink installed surface, promptly the fast axle and the optical axis of semiconductor laser are parallel to heat sink installed surface to the fast axle that the selection in described semiconductor laser chip soldering and sealing orientation makes semiconductor laser chip perpendicular to the slow axis of the soldering and sealing face of chip and chip.
2. the encapsulating structure of semiconductor laser according to claim 1 is characterized in that, described heat sink two connection electrode that comprise are connected with negative pole with the positive pole of semiconductor laser chip respectively; Described heat sink combination by metal material, metallic composite or metal and nonmetallic materials is made; Described have alignment pin or location hole on heat sink.
3. the semiconductor laser of fast and slow axis collimation, it is characterized in that, described semiconductor laser comprises the encapsulating structure of fast axis collimation lens, slow axis collimating lens and semiconductor laser as claimed in claim 1, described fast axis collimation lens be fixed on heat sink on, described fast axis collimation lens is used for the fast axle of semiconductor laser is collimated, and described slow axis collimating lens is used for the slow axis of semiconductor laser is collimated.
4. the semiconductor laser of fast and slow axis collimation according to claim 3, it is characterized in that, described slow axis collimating lens comprises the first post lens and the second post lens, the described second post lens are between the first post lens and fast axis collimation lens, the first post lens are used for the slow axis collimation, and the described second post lens are used to correct optical axis makes it parallel with heat sink installed surface.
5. according to the semiconductor laser of claim 3 or 4 described fast and slow axis collimations, it is characterized in that described heat sink two connection electrode that comprise are connected with negative pole with the positive pole of semiconductor laser chip respectively; Described heat sinkly make by metal material, metallic composite or nonmetal and metal material combination; Described have alignment pin or location hole on heat sink.
6. the one dimension semiconductor laser array of fast and slow axis collimation, it is characterized in that, described one dimension semiconductor laser array comprises semiconductor laser and mainboard with plane of at least two fast and slow axis collimations as claimed in claim 3, the semiconductor laser installing of described fast and slow axis collimation is on described mainboard, when installing and fixing semiconductor laser, rotate heat sink making and be parallel to each other through fast and slow axis collimated laser light bundle; Described semiconductor laser staggers successively at the fast axle and the optical axis both direction of semiconductor laser chip, and the distance that described semiconductor laser staggers on the semiconductor laser chip quick shaft direction is 0.2～2mm; The distance that described semiconductor laser staggers on the semiconductor laser chip optical axis direction is 6～30mm.
7. the one dimension semiconductor laser array of fast and slow axis collimation according to claim 6 is characterized in that described mainboard with plane is the cabinet of laser or has the heat sink of refrigerating function.
8. the two-dimensional semiconductor laser array of fast and slow axis collimation, it is characterized in that, described two-dimensional semiconductor laser array comprises the one dimension semiconductor laser array of at least two fast and slow axis collimations as claimed in claim 6, described one dimension semiconductor laser array is installed on the different planes, successively along the semiconductor laser chip slow-axis direction certain distance that staggers, the size of this distance is greater than the length of slow axis collimation hot spot, and the size of distance is 4～20mm; At quick shaft direction, described one dimension semiconductor laser array staggers successively, and the size that staggers is 0.5～10mm, and the one dimension semiconductor laser array that staggers successively makes to have the gap between the collimation hot spot of one dimension semiconductor laser array.
9. the two-dimensional semiconductor laser array of fast and slow axis collimation, it is characterized in that, described two-dimensional semiconductor laser array comprises mainboard and at least two semiconductor lasers as claim 3 or 4 described fast and slow axis collimations with cascaded surface, the semiconductor laser of described fast and slow axis collimation is fixed on the cascaded surface successively, when installing and fixing semiconductor laser, rotate heat sink making and be parallel to each other through fast and slow axis collimated laser light bundle; On same cascaded surface, described semiconductor laser staggers successively at fast axle and optical axis both direction, and the distance that staggers along quick shaft direction is 0.2～2mm, and the distance that staggers along optical axis direction is 6～30mm; On different cascaded surfaces, the distance that adjacent semiconductor laser staggers along quick shaft direction is 0.5～10mm; The spacing size of described cascaded surface is greater than the length of slow axis collimation hot spot, and the spacing size is 4～20mm.
10. the two-dimensional semiconductor laser array of fast and slow axis collimation according to claim 9 is characterized in that described mainboard with cascaded surface is the cabinet of laser or has the heat sink of refrigerating function.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105284020A (en) * | 2013-04-09 | 2016-01-27 | 恩耐激光技术有限公司 | Diode laser packages with flared laser oscillator waveguides |
| CN106340801A (en) * | 2016-01-29 | 2017-01-18 | 北京杏林睿光科技有限公司 | Semiconductor laser unit and mounting method thereof |
| US9627852B2 (en) | 2013-04-09 | 2017-04-18 | Nlight, Inc. | Diode laser packages with flared laser oscillator waveguides |
| CN106684700A (en) * | 2017-03-02 | 2017-05-17 | 长春理工大学 | Semiconductor laser heat sink |
| US10186836B2 (en) | 2014-10-10 | 2019-01-22 | Nlight, Inc. | Multiple flared laser oscillator waveguide |
| US10270224B2 (en) | 2015-06-04 | 2019-04-23 | Nlight, Inc. | Angled DBR-grating laser/amplifier with one or more mode-hopping regions |
| CN110021874A (en) * | 2018-01-10 | 2019-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of semiconductor laser and chip of laser |
| WO2021026997A1 (en) * | 2019-08-13 | 2021-02-18 | 尚华 | Replaceable laser and array thereof |
| CN113224634A (en) * | 2020-01-19 | 2021-08-06 | 山东华光光电子股份有限公司 | Light-packaged semiconductor laser and application thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463534A (en) * | 1990-08-01 | 1995-10-31 | Diomed Limited | High power light source |
| CN101458395A (en) * | 2007-12-12 | 2009-06-17 | 中国科学院半导体研究所 | Light beam shaper by refractometry for two-dimension laminate light source |
| US7586963B2 (en) * | 2005-11-22 | 2009-09-08 | Nlight Photonics Corporation | Modular diode laser assembly |
| US7733932B2 (en) * | 2008-03-28 | 2010-06-08 | Victor Faybishenko | Laser diode assemblies |
| CN101833150A (en) * | 2010-05-18 | 2010-09-15 | 中国科学院长春光学精密机械与物理研究所 | Fiber coupling module of high-power semiconductor laser |
| CN201927883U (en) * | 2010-09-17 | 2011-08-10 | 武汉高晟知光科技有限公司 | Packaging structure of semiconductor laser and application device thereof |
-
2010
- 2010-09-17 CN CN 201010285056 patent/CN102255238B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5463534A (en) * | 1990-08-01 | 1995-10-31 | Diomed Limited | High power light source |
| US7586963B2 (en) * | 2005-11-22 | 2009-09-08 | Nlight Photonics Corporation | Modular diode laser assembly |
| CN101458395A (en) * | 2007-12-12 | 2009-06-17 | 中国科学院半导体研究所 | Light beam shaper by refractometry for two-dimension laminate light source |
| US7733932B2 (en) * | 2008-03-28 | 2010-06-08 | Victor Faybishenko | Laser diode assemblies |
| CN101833150A (en) * | 2010-05-18 | 2010-09-15 | 中国科学院长春光学精密机械与物理研究所 | Fiber coupling module of high-power semiconductor laser |
| CN201927883U (en) * | 2010-09-17 | 2011-08-10 | 武汉高晟知光科技有限公司 | Packaging structure of semiconductor laser and application device thereof |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105284020A (en) * | 2013-04-09 | 2016-01-27 | 恩耐激光技术有限公司 | Diode laser packages with flared laser oscillator waveguides |
| US9553424B2 (en) | 2013-04-09 | 2017-01-24 | Nlight, Inc. | Flared laser oscillator waveguide |
| US9627852B2 (en) | 2013-04-09 | 2017-04-18 | Nlight, Inc. | Diode laser packages with flared laser oscillator waveguides |
| US10014664B2 (en) | 2013-04-09 | 2018-07-03 | Nlight, Inc. | Flared laser oscillator waveguide |
| US10063030B2 (en) | 2013-04-09 | 2018-08-28 | Nlight, Inc. | Diode laser packages with flared laser oscillator waveguides |
| US10186836B2 (en) | 2014-10-10 | 2019-01-22 | Nlight, Inc. | Multiple flared laser oscillator waveguide |
| US10270224B2 (en) | 2015-06-04 | 2019-04-23 | Nlight, Inc. | Angled DBR-grating laser/amplifier with one or more mode-hopping regions |
| CN106340801A (en) * | 2016-01-29 | 2017-01-18 | 北京杏林睿光科技有限公司 | Semiconductor laser unit and mounting method thereof |
| CN106684700A (en) * | 2017-03-02 | 2017-05-17 | 长春理工大学 | Semiconductor laser heat sink |
| CN110021874A (en) * | 2018-01-10 | 2019-07-16 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of semiconductor laser and chip of laser |
| WO2021026997A1 (en) * | 2019-08-13 | 2021-02-18 | 尚华 | Replaceable laser and array thereof |
| CN113224634A (en) * | 2020-01-19 | 2021-08-06 | 山东华光光电子股份有限公司 | Light-packaged semiconductor laser and application thereof |
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