CN102270970A - Light-emitting diode circuit and error amplifier thereof - Google Patents
Light-emitting diode circuit and error amplifier thereof Download PDFInfo
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- CN102270970A CN102270970A CN201010198584XA CN201010198584A CN102270970A CN 102270970 A CN102270970 A CN 102270970A CN 201010198584X A CN201010198584X A CN 201010198584XA CN 201010198584 A CN201010198584 A CN 201010198584A CN 102270970 A CN102270970 A CN 102270970A
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Abstract
The invention discloses a light-emitting diode circuit and an error amplifier thereof. The light-emitting diode circuit comprises an inductor, a light-emitting diode group, a power metal oxide semiconductor transistor, the error amplifier and a pulse width modulator which controls the gate of the power metal oxide semiconductor transistor according to an error amplifier output end. The error amplifier comprises a differential input stage, an output stage and a regulation current source, wherein the output stage comprises an N-type metal oxide semiconductor transistor and a P-type metal oxide semiconductor transistor; and the regulation current source is connected to the gate of the P-type metal oxide semiconductor transistor. A control voltage switches the regulation current source on in a first operating mode, and switches the regulation current source off in a second operating mode.
Description
Technical field
Content of the present invention relates to a kind of amplifier, the circuit of LED that particularly relates to a kind of error amplifier and comprise this error amplifier.
Background technology
Light-emitting diode (light emitting diode; LED) compare with traditional bulb illuminations, estimate that its efficient is about four times of conventional bulb.And light-emitting diode does not have traditional bulb and contains poisonous mercury, more has the useful life longer than bulb.Under all factors, light-emitting diode has become the up-to-date mainstream technology of modern illumination science and technology.
For the voltage that makes circuit of LED stable, often by the setting of inductance to achieve the goal.When circuit of LED came into operation, what need was reaction time fast, and entering mode of operation rapidly, and the reaction time will make circuit of LED can produce sizable electric current at short notice fast.Yet the burst current that circuit of LED produced with fast-response time makes above-mentioned inductance bear easily and causes damage.Therefore, if circuit of LED does not have the mechanism of can elasticity adjusting to the reaction time, then inductance will continue to suffer the impact of burst current under mode of operation, and damage easily, and voltage regulation result can't be provided normally.
Therefore, how to design a new circuit of LED and error amplifier thereof, in the reaction time to provide elasticity to adjust, be the industry problem demanding prompt solution.
Summary of the invention
Therefore, an aspect of content of the present invention provides a kind of error amplifier (error amplifier), comprises: differential input level, output stage and adjustment current source.Differential input level comprises differential output.Output stage comprises: N type metal oxide semiconductor transistor (NMOS) and P-type mos transistor (PMOS).N type metal oxide semiconductor transistor comprises drain electrode and grid, and wherein drain electrode is connected to the error amplifier output, and grid is connected to differential output end.The P-type mos transistor comprises grid and drain electrode, and wherein grid is connected to current source, and drain electrode is connected to N type metal oxide semiconductor transistor drain.Adjust current source and be connected to the transistorized grid of P-type mos, and adjust current source reception control voltage.In first operator scheme, control voltage makes the adjustment current source conduction, and in second operator scheme, control voltage is closed the adjustment current source.
According to an embodiment of content of the present invention, in first operator scheme, control voltage makes the adjustment current source conduction, and the transconductance value of output stage is promoted.In second operator scheme, control voltage is closed the adjustment current source, and the transconductance value of output stage is reduced.
According to another embodiment of content of the present invention, wherein adjust current source and comprise the P-type mos transistor current source.
Another embodiment according to content of the present invention, wherein differential input level also comprises the first input end and second input, first input end is in order to receive reference voltage, second input is in order to receive changing voltage, and wherein differential output end produces differential output voltage according to reference voltage and changing voltage.
According to an embodiment again of content of the present invention, wherein current source provides drive current, comes from the adjustment electric current is provided in first operator scheme and adjust electric current.
Another aspect of content of the present invention provides a kind of light-emitting diode (light emitting diode; LED) circuit comprises: inductance, light-emitting diode group, power MOS transistor, error amplifier and pulse width modulator.Inductance is in order to connect the supply voltage and first end.Light-emitting diode group is connected in first end.Power MOS transistor is connected in first end.Error amplifier comprises: differential input level, output stage and adjustment current source.Differential input level comprises differential output.Output stage comprises: N type metal oxide semiconductor transistor (NMOS) and P-type mos transistor (PMOS).N type metal oxide semiconductor transistor comprises drain electrode and grid, and wherein drain electrode is connected to the error amplifier output, and grid is connected to differential output end.The P-type mos transistor comprises grid and drain electrode, and wherein grid is connected to current source, and drain electrode is connected to N type metal oxide semiconductor transistor drain.Adjust current source and be connected to the transistorized grid of P-type mos, and adjust current source reception control voltage.In first operator scheme, control voltage makes the adjustment current source conduction, and in second operator scheme, control voltage is closed the adjustment current source.Pulse width modulator is in order to produce the switch signal according to the error amplifier output, with the power controlling metal oxide semiconductor transistor, so that light-emitting diode group is carried out charge or discharge.
According to an embodiment of content of the present invention, in first operator scheme, control voltage makes the adjustment current source conduction, and the transconductance value of output stage is promoted.In second operator scheme, control voltage is closed the adjustment current source, and the transconductance value of output stage is reduced.
According to another embodiment of content of the present invention, wherein adjust current source and comprise the P-type mos transistor current source.
Another embodiment according to content of the present invention, wherein differential input level also comprises the first input end and second input, first input end is in order to receive reference voltage, second input is in order to receive changing voltage, and wherein differential output end produces differential output voltage according to reference voltage and changing voltage.The feedback voltage of changing voltage for being exported from light-emitting diode group.
Embodiment again according to content of the present invention, when circuit of LED comes into operation, control voltage makes adjusts current source operation in first operator scheme, to promote the transconductance value of output stage, after circuit of LED comes into operation, gap between reference voltage and changing voltage is during less than critical value, and control voltage makes adjusts current source operation in second operator scheme, to reduce the transconductance value of output stage.
An embodiment who has more according to content of the present invention, in the circuit of LED running, when the gap between reference voltage and changing voltage during greater than critical value, control voltage makes adjusts current source operation in first operator scheme, to promote the transconductance value of output stage, when the gap between reference voltage and changing voltage during less than critical value, control voltage makes adjusts current source operation in second operator scheme, to reduce the transconductance value of output stage.
An embodiment who has again according to content of the present invention, when circuit of LED comes into operation, control voltage makes adjusts current source operation in first operator scheme, to promote the transconductance value of output stage, when circuit of LED comes into operation above behind the special time, control voltage makes adjusts current source operation in second operator scheme, to reduce the transconductance value of output stage.
According to an embodiment of content of the present invention, wherein pulse width modulator also the self-oscillation device receive oscillating voltage, pulse width modulator comes down to produce the switch signal according to error amplifier output and oscillating voltage.Wherein oscillating voltage is a zigzag waveform voltage.Wherein current source provides drive current, comes from the adjustment electric current is provided in first operator scheme and adjust electric current.
The advantage of using content of the present invention is by adjusting current source, can be if necessary in changing the magnitude of current of error amplifier between different mode, and then change its transconductance value, and reach above-mentioned purpose easily.
Description of drawings
For the above-mentioned of content of the present invention and other purpose, feature, advantage and embodiment can be become apparent, as follows to its description of the drawings:
Fig. 1 is among the embodiment of content of the present invention, the schematic diagram of circuit of LED;
Fig. 2 is among the embodiment of content of the present invention, the more detailed schematic diagram of error amplifier; And
Fig. 3 A and Fig. 3 B illustrate among the embodiment of content of the present invention, under different operation modes, and the schematic diagram of error amplifier.
The reference numeral explanation
1: circuit of LED 10: inductance
End 12 in 11: the first: light-emitting diode group
120: load 14: the power metal-oxide semiconductor crystal
16: the error amplifier pipe
180: oscillator 18: pulse width modulator
21: control voltage 20: differential input level
220:N type metal oxide semiconductor crystalline substance 22: output stage
The brilliant pipe of body pipe 222:P type metal oxide semiconductor
24: current source 26: adjust current source
Embodiment
Please refer to Fig. 1.Fig. 1 is among the embodiment of content of the present invention, the schematic diagram of circuit of LED 1.Circuit of LED 1 comprises: inductance 10, light-emitting diode group 12, power MOS transistor 14, error amplifier 16 and pulse width modulator 18.
Inductance 10 is supplied the voltage Vp and first end 11 in order to connect, and the mechanism of a voltage stabilizing is provided.Light-emitting diode group 12 is connected between first end 11 and the earthing potential.In present embodiment, in fact still be connected with load 120 between light-emitting diode group 12 and earthing potential.Power MOS transistor 14 is connected between first end 11 and the earthing potential.
In present embodiment, circuit of LED 1 also comprises oscillator 180.Oscillator 180 produces the oscillating voltage Vo of zigzag wave mode.Pulse width modulator 18 receives output voltage error amplifier Ve and oscillating voltage Vo simultaneously, and produces the switch signal that has cycle of activity (active period) and close the cycle (inactive period) according to this.The switch signal further is sent to the grid of power MOS transistor 14, with the switch of power controlling metal oxide semiconductor transistor 14, further light-emitting diode group 12 is charged or discharges.
In an embodiment, oscillating voltage Vo keeps identical waveform.Therefore, the cycle of activity of big young pathbreaker's determine switch signal of output voltage error amplifier Ve and the length in the cycle of closing.When the switch signal made power MOS transistor 14 start charge machine-processed, light-emitting diode group 12 was with conducting and luminous.On the contrary, when the switch signal makes power MOS transistor 14 start discharge machine-processed, then light-emitting diode group 12 will close.Therefore, output voltage error amplifier Ve will determine the behavior of charging and discharge, and determine the magnitude of current of first end 11.
When circuit of LED 1 came into operation, what need was reaction time fast, so that circuit of LED 1 enters mode of operation rapidly.By the lifting change rate that improves output voltage error amplifier Ve, can reach the effect of fast-response time.And the reaction time will make circuit of LED 1 can produce sizable electric current at short notice fast.Yet, have the burst current that the circuit of LED 1 of fast-response time is produced, inductance 10 can't be born and cause damage.Therefore, if the error amplifier of the circuit of LED 1 16 pairs of reaction time does not have the mechanism of can elasticity adjusting, and make output voltage error amplifier Ve continue to keep higher lifting change rate, then inductance 10 will continue to suffer burst current under mode of operation, and damage easily, voltage regulation result can't be provided normally.
Please refer to Fig. 2.Fig. 2 is among the embodiment of content of the present invention, error amplifier 16 more detailed schematic diagrames.Error amplifier 16 comprises: differential input level 20, output stage 22 and adjustment current source 24.
In present embodiment, the control voltage 21 with first state and second state can be adjusted the running of current source 24 in order to control.Please be simultaneously with reference to Fig. 3 A and Fig. 3 B.Fig. 3 A and Fig. 3 B illustrate among the embodiment of content of the present invention, under different operation modes, and the schematic diagram of error amplifier 16.
In first operator scheme, control voltage 21 is positioned at first state, so that adjust current source 24 conductings.Fig. 3 A illustrates under first operator scheme, the equivalent circuit diagram of error amplifier 16.By Fig. 3 A as can be known, under first operator scheme, current source 26 and 24 one-tenth of adjustment current sources are in parallel, and all are positioned at the state of conducting.Current source 26 provides the electric current of driving, adjusts the electric current that current source 24 then provides adjustment.
In second operator scheme, control voltage 21 is positioned at second state, closes so that adjust current source 24.Therefore, adjusting current source 24 will no longer operate in second operator scheme.Fig. 3 B illustrates under second operator scheme, the equivalent circuit diagram of error amplifier 16.By Fig. 3 B as can be known, under second operator scheme, current source 26 is only arranged still in work, so that the electric current of driving to be provided.
Therefore, after by second mode transitions to the first operator scheme, the transconductance value of the output stage 22 of error amplifier 16 will obtain to promote, and can make the reaction time quick, that is output voltage error amplifier Ve can change fast.On the contrary, after by first mode transitions to the second operator scheme, the transconductance value of the output stage 22 of error amplifier 16 will reduce, and the reaction time will be slack-off thereupon also.
In an embodiment, when circuit of LED 1 comes into operation, control voltage 21 will make adjustment current source 24 operate in first operator scheme, to promote the transconductance value of output stage 22, and make error amplifier 16 have the reaction time fast, the output voltage or the electric current of circuit of LED 1 can be increased fast, can be promptly switch to the mode of operation from the initial condition of circuit.When circuit of LED 1 comes into operation above behind the special time, error amplifier 16 is stable to be operated in the mode of operation, then controlling voltage 21 will make adjustment current source 24 operate in second operator scheme, reducing the transconductance value of output stage 22, and make the voltage of first end 11 or electric current no longer have lifting fast and influence the running of inductance 10.
In another embodiment, when circuit of LED 1 comes into operation, control voltage 21 will make adjustment current source 24 operate in first operator scheme, with as previously mentioned, promote the transconductance value of output stage 22.Then, the testing mechanism to reference voltage Vref and feedback voltage Vf will start, and with when the gap between reference voltage Vref and the feedback voltage Vf during less than a critical value, judge that circuit of LED 1 is stable to operate in the mode of operation.Therefore, control voltage 21 will make adjustment current source 24 operate in second operator scheme, to reduce the transconductance value of output stage 22.
In another embodiment of content of the present invention, in circuit of LED 1 running, above-mentioned testing mechanism can carry out constantly.When the gap between reference voltage Vref and feedback voltage Vf during greater than critical value, expression circuit of LED 1 is in an unsure state down.For instance, if feedback voltage Vf is too big or too little concerning normal operating state, then control voltage 21 adjustment current source 24 will be operated in first operator scheme,, promptly reduce or promote the voltage or the electric current of first end 11 to promote the transconductance value of output stage 22.And when the gap between reference voltage and changing voltage during less than critical value, judge then that circuit of LED 1 is stable to operate in the mode of operation.Therefore, control voltage 21 will make adjustment current source 24 operate in second operator scheme, to reduce the transconductance value of output stage 22.
Be noted that the rise of output voltage of error amplifier 16 or decline are the size decisions by reference voltage Vref and feedback voltage Vf.For instance, in an embodiment, when feedback voltage Vf greater than reference voltage Vref, then error amplifier 16 reduces output voltage, and when feedback voltage Vf less than reference voltage Vref, then error amplifier 16 raises output voltage.And on the other hand, the electric current and voltage rise and fall rate of circuit of LED also can be by the decision of the size of reference voltage Vref and feedback voltage Vf, that is, change by the transconductance value that changes output stage 22.
Therefore, circuit of LED in the content of the present invention and the error amplifier that is comprised thereof, but provide elasticity to adjust the mechanism in reaction time.By the transconductance value that changes output stage in the error amplifier, the rise of output voltage of error amplifier and rate of descent can switch to suitable numerical value with different situations.Therefore, provide to the curtage of light-emitting diode group and also can adjust thereupon.And provide the inductance of voltage stabilizing also can therefore avoid being damaged in the circuit of LED.
Though content of the present invention discloses as above with execution mode; right its is not in order to limit content of the present invention; those skilled in the art; under the prerequisite of the spirit and scope that do not break away from content of the present invention, can be used for a variety of modifications and variations, so the protection range of content of the present invention is as the criterion with claim of the present invention.
Claims (18)
1. error amplifier comprises:
One differential input level comprises a differential output end;
One output stage comprises:
One N type metal oxide semiconductor transistor comprises a drain electrode and a grid, and wherein this drain electrode is connected to an error amplifier output and this grid is connected to this differential output end; And
One P-type mos transistor comprises a grid and a drain electrode, and wherein this grid is connected to a current source, and this drain electrode is connected to this N type metal oxide semiconductor transistor drain; And
One adjusts current source, is connected to the transistorized grid of this P-type mos, and should adjust current source reception one control voltage;
Wherein in one first operator scheme, this control voltage makes this adjustment current source conduction, and in one second operator scheme, this control voltage is closed this adjustment current source.
2. error amplifier as claimed in claim 1, wherein in this first operator scheme, this control voltage makes this adjustment current source conduction, to promote the transconductance value of this output stage.
3. error amplifier as claimed in claim 1, wherein in this second operator scheme, this control voltage is closed this adjustment current source, to reduce the transconductance value of this output stage.
4. error amplifier as claimed in claim 1, wherein this adjustment current source comprises at least one P-type mos transistor current source.
5. error amplifier as claimed in claim 1, wherein this differential input level also comprises a first input end and one second input, this first input end is in order to receive a reference voltage, this second input is in order to receive a changing voltage, and wherein this differential output end produces a differential output voltage according to this reference voltage and this changing voltage.
6. error amplifier as claimed in claim 1, wherein this current source provides a drive current, and this adjustment electric current comes from and provides one to adjust electric current in this first operator scheme.
7. circuit of LED comprises:
One inductance is in order to connect a supply voltage and one first end;
One light-emitting diode group is connected in this first end;
One power MOS transistor is connected in this first end;
One error amplifier comprises:
One differential input level comprises a differential output end;
One output stage comprises:
One N type metal oxide semiconductor transistor comprises a drain electrode and a grid, and wherein this drain electrode is connected to an error amplifier output and this grid is connected to this differential output end; And
One P-type mos transistor comprises a grid and a drain electrode, and wherein this grid is connected to a current source, and this drain electrode is connected to this N type metal oxide semiconductor transistor drain; And
One adjusts current source, be connected to the transistorized grid of this P-type mos, and should adjust current source and receive a control voltage, wherein in one first operator scheme, this control voltage makes this adjustment current source conduction, in one second operator scheme, this control voltage is closed this adjustment current source; And
One pulse width modulator is in order to produce a switch signal according to this error amplifier output, to control this power MOS transistor, so that this light-emitting diode group is carried out charge or discharge.
8. circuit of LED as claimed in claim 7, wherein in this first operator scheme, this control voltage makes this adjustment current source conduction, to promote the transconductance value of this output stage.
9. circuit of LED as claimed in claim 7, wherein in this second operator scheme, this control voltage is closed this adjustment current source, to reduce the transconductance value of this output stage.
10. circuit of LED as claimed in claim 7, wherein this adjustment current source comprises at least one P-type mos transistor current source.
11. circuit of LED as claimed in claim 7, wherein this differential input level also comprises a first input end and one second input, this first input end is in order to receive a reference voltage, this second input is in order to receive a changing voltage, and wherein this differential output end produces a differential output voltage according to this reference voltage and this changing voltage.
12. circuit of LED as claimed in claim 11, the wherein feedback voltage of this changing voltage for being exported from this light-emitting diode group.
13. circuit of LED as claimed in claim 11, wherein when this circuit of LED comes into operation, this control voltage makes this adjustment current source operation in this first operator scheme, to promote the transconductance value of this output stage, after this circuit of LED comes into operation, gap between this reference voltage and this changing voltage is during less than a critical value, and this control voltage makes this adjustment current source operation in this second operator scheme, to reduce the transconductance value of this output stage.
14. circuit of LED as claimed in claim 11, wherein in this circuit of LED running, when the gap between this reference voltage and this changing voltage during greater than a critical value, this control voltage makes this adjustment current source operation in this first operator scheme, to promote the transconductance value of this output stage, when this gap between this reference voltage and this changing voltage during less than this critical value, this control voltage makes this adjustment current source operation in this second operator scheme, to reduce the transconductance value of this output stage.
15. circuit of LED as claimed in claim 11, wherein when this circuit of LED comes into operation, this control voltage makes this adjustment current source operation in this first operator scheme, to promote the transconductance value of this output stage, when this circuit of LED comes into operation above behind the special time, this control voltage makes this adjustment current source operation in this second operator scheme, to reduce the transconductance value of this output stage.
16. circuit of LED as claimed in claim 7, wherein this pulse width modulator also receives an oscillating voltage from an oscillator, and this pulse width modulator comes down to produce this switch signal according to this error amplifier output and this oscillating voltage.
17. circuit of LED as claimed in claim 16, wherein this oscillating voltage is a zigzag waveform voltage.
18. circuit of LED as claimed in claim 16, wherein this current source provides a drive current, and this adjustment electric current comes from and provides one to adjust electric current in this first operator scheme.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010198584XA CN102270970A (en) | 2010-06-04 | 2010-06-04 | Light-emitting diode circuit and error amplifier thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010198584XA CN102270970A (en) | 2010-06-04 | 2010-06-04 | Light-emitting diode circuit and error amplifier thereof |
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| CN102270970A true CN102270970A (en) | 2011-12-07 |
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| CN201010198584XA Pending CN102270970A (en) | 2010-06-04 | 2010-06-04 | Light-emitting diode circuit and error amplifier thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112203382A (en) * | 2020-09-30 | 2021-01-08 | 杭州启绿科技有限公司 | Light source driving device and driving method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6943504B1 (en) * | 2003-11-24 | 2005-09-13 | National Semiconductor Corporation | Open loop magnetic boost LED driver system and method |
| CN101013884A (en) * | 2006-11-24 | 2007-08-08 | 华中科技大学 | Unilateral hysteresis comparator |
| US20100109774A1 (en) * | 2008-07-14 | 2010-05-06 | Nec Electronics Corporation | Operational amplifier |
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2010
- 2010-06-04 CN CN201010198584XA patent/CN102270970A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6943504B1 (en) * | 2003-11-24 | 2005-09-13 | National Semiconductor Corporation | Open loop magnetic boost LED driver system and method |
| CN101013884A (en) * | 2006-11-24 | 2007-08-08 | 华中科技大学 | Unilateral hysteresis comparator |
| US20100109774A1 (en) * | 2008-07-14 | 2010-05-06 | Nec Electronics Corporation | Operational amplifier |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112203382A (en) * | 2020-09-30 | 2021-01-08 | 杭州启绿科技有限公司 | Light source driving device and driving method |
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Application publication date: 20111207 |