CN102299201A - Laser processing method for front electrode of solar cell and device - Google Patents
Laser processing method for front electrode of solar cell and device Download PDFInfo
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- CN102299201A CN102299201A CN2011102462800A CN201110246280A CN102299201A CN 102299201 A CN102299201 A CN 102299201A CN 2011102462800 A CN2011102462800 A CN 2011102462800A CN 201110246280 A CN201110246280 A CN 201110246280A CN 102299201 A CN102299201 A CN 102299201A
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Abstract
The invention discloses a laser processing method for a front electrode of a solar cell and a device. A laser is adopted as a processing light source, a fine focusing light beam is obtained through a laser beam expansion focusing system, a two-dimensional displacement platform is used for forming an electrode pattern path, the laser is adopted for carving fine lines on the surface of a silicon chip, different absorption characteristics of materials on the laser are utilized, and a silicon nitride film layer is etched and removed without damaging the PN junction; and electrodes are manufactured on the carved fine lines through the electroplating technology, and the current collection and the current transportation are realized. The front electrode of the solar cell is manufactured through the combination of the laser processing and the electroplating technology, and the width of auxiliary grid lines is reduced, i.e. the light shielding area of the electrode is reduced, so the cell efficiency is effectively improved.
Description
Technical field
The present invention relates to a kind of front electrodes of solar cells laser processing and device, belong to technical field of laser processing.
Background technology
For many years, some developed countries show great attention to the new forms of energy trend of industry development in the world, and increase government spending, actively push forward its development.Solar energy is one of following renewable new forms of energy of main cleaning that substitute fossil energy.People study solar cell from each application, and wherein main direction of studying is the photoelectric conversion efficiency of raising solar cell and reduces cost.Crystal silicon chip thickness is more and more thinner at present, and therefore more frangible, this trend has promoted the development of noncontact treatment technology, keeps low fragmentation rate and high yield with this.The laser retrofit is with the characteristics such as energy output of its noncontact energy injection, light beam guiding flexibly, precision, compare with conventional art and to have that process velocity is fast, little to the damage of material, scrappage is low, advantages of environment protection, be fit to very much solar cell processing.
One of step of producing the crystal-silicon solar cell most critical is to make very fine circuit at the front and back of silicon chip, and light induced electron is derived battery.At present this metal coating technology is finished the electrocondution slurry that is about to contain metal by screen printing technique usually and is seen through screen mesh and be stamped in and form circuit or electrode on the silicon chip.
Wherein the preceding electrode of solar cell is that front electrode is made of main grid line and secondary grid line two parts, the main grid line is a thicker part branch of directly receiving the outside batteries lead-in wire, secondary grid line then is in order electric current collection to be got up to be delivered to the thin part that the main grid line goes, to be made into narrow thin grid line shape to overcome the resistance of diffusion layer.Electrode pattern, for example the shape of electrode, width and density etc. are bigger for the influence of solar cell conversion efficiency.
A negative effect of positive conducting channel is that shade blocks: lead has stopped a part of sunlight, makes its effective coverage that can't enter battery, thereby has reduced conversion efficiency.Minimum for this shadow effect is dropped to, secondary grid line live width must be accomplished the narrowest as far as possible.But because the restriction of performances such as printing-ink viscosity, surface tension, fineness, present standard lines can only be too narrow to 80 μ m.In addition, in order to keep enough conductivity, the height of lines must increase, and could keep same cross-sectional area like this.Realize that solution thinner, higher conductive wire cross-section is exactly with many overlapping printings of lead.This just mean screen process press must can high accuracy, high duplication ground prints very tiny lines.
Summary of the invention
The objective of the invention is provides a kind of front electrodes of solar cells laser processing and device in order to overcome the shortcoming that existing screen process press can not make the secondary grid line of front electrodes of solar cells do narrowlyer.
A kind of front electrodes of solar cells laser processing is characterized in, this method step is:
1. adopt the PECVD method not only to play the antireflective effect but also can reach the silicon nitride film of the effect of passivation at surface of crystalline silicon deposition one deck;
2. according to silicon nitride film and the different absorption coefficients of crystalline silicon material to optical maser wavelength, the control laser energy also is complementary with process velocity, make laser process fine rule at surface of crystalline silicon, etching is removed silicon nitride film, make following PN junction exposed outside, the pattern of etching is the front electrodes of solar cells pattern;
3. adopt conventional galvanoplastic to form metallic electrode at the crystal silicon front surface, realize to the collection of electric current with transport.
A kind of device of realizing above-mentioned front electrodes of solar cells laser processing is characterized in, this device mainly comprises: laser, beam expanding lens, speculum, focus lens group, two-dimension displacement workbench and computer control system; Laser output power and/or repetition rate are subjected to computer-controlled laser beam, pass through the beam expanding lens beam-expanding collimation and conduct to speculum and enter focus lens group by light path, be focused at by focus lens group on the focal plane of focus lamp group, form the high-energy-density hot spot, move up and down by focusing module, the high-energy-density hot spot is positioned on the machined surface that is installed in the machined material silicon nitride film on the high two-dimension displacement workbench, move by computer control two-dimension displacement workbench by the visual identity module, realize the location of workpiece, and move by the pattern trace of setting by computer control two-dimension displacement workbench.Laser beam moment high temperature melting or vaporization machined material, the silicon nitride film part of etching machined material, after the removal that is etched, the PN junction below it is exposed outside, electroplating technology by routine makes etching remove the exposed PN junction metallization of back below it, electrode before forming.
The present invention adopts laser to delineate fine rule at silicon chip surface, utilizes the different absorption characteristic of material for laser light, and etching is removed silicon nitride film layer and do not injured PN junction; On the fine rule of delineation, make electrode by electroplating technology, realize to the collection of electric current with transport.Laser processing is made front electrodes of solar cells in conjunction with electroplating technology, has reduced the width of secondary grid line, has promptly reduced electrode shading area, thereby has improved battery efficiency very effectively.
Description of drawings
Fig. 1 is a front electrodes of solar cells laser processing device theory diagram;
Fig. 2 is a silicon nitride film laser ablation schematic diagram;
Fig. 3 is the electroplated electrode schematic diagram.
Embodiment
A kind of front electrodes of solar cells laser processing is to adopt the PECVD method to deposit one deck silicon nitride film at surface of crystalline silicon, has both played the antireflective effect, can reach the effect of passivation simultaneously, thereby improves the photoelectric conversion efficiency of solar cell.Silicon nitride film also is an insulating barrier simultaneously, and the thickness of film is about 80nm, and the PN junction below it is 0.4 μ m deeply.According to silicon nitride film and the different absorption coefficients of crystalline silicon material to optical maser wavelength, accurately control laser energy and be complementary by computer with process velocity, make laser process fine rule at surface of crystalline silicon, etching is removed silicon nitride film, but do not injure the PN junction below it, the pattern of etching is front electrodes of solar cells (circuit) pattern.The silicon nitride film of insulation is etched, and to remove the PN junction of back below it exposed outside, adopts conventional galvanoplastic to form metallic electrode at the crystal silicon front surface, realize to the collection of electric current with transport.The width of electrode is by the fine rule width decision of laser processing, and the height of electrode is determined by electroplating technology.
A kind of device of realizing above-mentioned front electrodes of solar cells laser processing by Fig. 1-shown in Figure 3, is characterized in that this device mainly comprises: laser 1, beam expanding lens 2, speculum 3, focus lens group 4, two-dimension displacement workbench 6 and computer control system; Laser 1 power output and/or repetition rate are subjected to computer-controlled laser beam, pass through beam expanding lens 2 beam-expanding collimations and conduct to speculum 3 and enter focus lens group 4 by light path, be focused at by focus lens group 4 on the focal plane of focus lamp group, form high-energy-density hot spot 9, move up and down by focusing module 7, high-energy-density hot spot 9 is positioned on the machined surface of the machined material silicon nitride film 5 that is installed on the two-dimension displacement workbench 6, move by computer control two-dimension displacement workbench 6 by visual identity module 8, realize the location of workpiece, and move by the pattern trace of setting by computer control two-dimension displacement workbench 6.Focal beam spot 9 moment high temperature melting or vaporization machined material 5, silicon nitride film 10 parts of etching machined material, be etched remove after, PN junction below it is exposed outside, electroplating technology by routine makes etching remove exposed PN junction 11 metallization of back below it, electrode 12 before forming.
Used computer control system comprises hardware system and software systems in the said apparatus, and characteristics are to install motion control card additional, and Synchronization Control laser switch, laser output power and repetition rate are regulated, laser is focused and the motion of two-dimentional work shift platform; Also install image pick-up card in the computer system additional, be used for reading of workpiece image.Described computer software mainly comprises:
(1) laser control module: running parameters such as the switch of control laser, control laser output power and repetition rate adjusting;
(2) focusing module: the control focus adjusting mechanism is regulated the distance between laser condensing lens group and the processing work, guarantees that machined surface is positioned on the focal plane of laser condensing lens group;
(3) displacement control module: walk track by electrode pattern;
(4) Machine Vision Recognition module: control high-precision two-dimensional displacement platform is realized the location alignment of workpiece.
Electroplating system is used at the silicon chip metallized electrode that powers on.
Embodiment
Machined material of the present invention is the monocrystalline silicon piece of cvd nitride silicon thin film, and laser adopts radio frequency CO
2Laser, continuous power output 50W.Output beam expands 5 times of bundles, and the focus lens group focal length is 50mm, delineates fine rule on the monocrystalline silicon piece of cvd nitride silicon thin film, and the narrowest width of fine rule is 40 microns.Two-dimension displacement workbench speed is 80mm/s.Carry out conventional electroplating technology after silicon chip after delineation is good cleans, form required preceding electrode.
Claims (2)
1. a front electrodes of solar cells laser processing is characterized in that, this method step is:
Adopt the PECVD method not only to play the antireflective effect but also can reach the silicon nitride film of the effect of passivation at surface of crystalline silicon deposition one deck;
According to silicon nitride film and the different absorption coefficients of crystalline silicon material to optical maser wavelength, the control laser energy also is complementary with process velocity, make laser process fine rule at surface of crystalline silicon, etching is removed silicon nitride film, make following PN junction exposed outside, the pattern of etching is the front electrodes of solar cells pattern;
Adopt conventional galvanoplastic to form metallic electrode at the crystal silicon front surface, realize to the collection of electric current with transport.
2. a device of realizing the described front electrodes of solar cells laser processing of claim 1 is characterized in that, this device mainly comprises: laser, beam expanding lens, speculum, focus lens group, two-dimension displacement workbench and computer control system; Laser output power and/or repetition rate are subjected to computer-controlled laser beam, pass through the beam expanding lens beam-expanding collimation and conduct to speculum and enter focus lens group by light path, be focused at by focus lens group on the focal plane of focus lamp group, form the high-energy-density hot spot, move up and down by focusing module, the high-energy-density hot spot is positioned on the machined surface that is installed in the machined material on the high two-dimension displacement workbench, move by computer control two-dimension displacement workbench by the visual identity module, realize the location of workpiece, and by of the pattern trace motion of computer control two-dimension displacement workbench by setting, laser beam moment high temperature melting or vaporization machined material, the silicon nitride film part of etching machined material, be etched remove after, PN junction below it is exposed outside, electroplating technology by routine makes etching remove the exposed PN junction metallization of back below it, electrode before forming.
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Cited By (6)
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CN104684678A (en) * | 2013-09-25 | 2015-06-03 | 株式会社Lg化学 | Laser cutting apparatus and cutting method therefor |
CN107871790A (en) * | 2016-08-31 | 2018-04-03 | 材料概念有限公司 | Solar cell and its manufacture method |
CN108031969A (en) * | 2017-12-29 | 2018-05-15 | 广东工业大学 | A kind of micro-nano channel production method and device |
CN111624725A (en) * | 2020-04-22 | 2020-09-04 | 大族激光科技产业集团股份有限公司 | System for realizing zooming and light path shaping |
CN111843218A (en) * | 2019-04-30 | 2020-10-30 | 细美事有限公司 | Substrate processing method, substrate processing apparatus, and substrate processing system |
CN114649444A (en) * | 2022-03-15 | 2022-06-21 | 天合光能股份有限公司 | Photovoltaic module short circuit repair method and device without damaging module structure |
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CN101745746A (en) * | 2008-12-17 | 2010-06-23 | 无锡浩波光电子有限公司 | Laser four-beam slotting device of solar silicon wafer |
CN101789468A (en) * | 2010-02-26 | 2010-07-28 | 华南师范大学 | Method for preparing solar array electrode by electro-brush plating |
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Publication number | Priority date | Publication date | Assignee | Title |
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CN104684678A (en) * | 2013-09-25 | 2015-06-03 | 株式会社Lg化学 | Laser cutting apparatus and cutting method therefor |
CN104684678B (en) * | 2013-09-25 | 2017-09-19 | 株式会社Lg 化学 | Laser cutting device and its cutting method |
CN107871790A (en) * | 2016-08-31 | 2018-04-03 | 材料概念有限公司 | Solar cell and its manufacture method |
CN108031969A (en) * | 2017-12-29 | 2018-05-15 | 广东工业大学 | A kind of micro-nano channel production method and device |
CN111843218A (en) * | 2019-04-30 | 2020-10-30 | 细美事有限公司 | Substrate processing method, substrate processing apparatus, and substrate processing system |
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CN111624725A (en) * | 2020-04-22 | 2020-09-04 | 大族激光科技产业集团股份有限公司 | System for realizing zooming and light path shaping |
CN114649444A (en) * | 2022-03-15 | 2022-06-21 | 天合光能股份有限公司 | Photovoltaic module short circuit repair method and device without damaging module structure |
CN114649444B (en) * | 2022-03-15 | 2023-10-27 | 天合光能股份有限公司 | Photovoltaic module short circuit repairing method and device without damaging module structure |
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