CN102313601A - Thermal type infrared detector - Google Patents
Thermal type infrared detector Download PDFInfo
- Publication number
- CN102313601A CN102313601A CN2010102287012A CN201010228701A CN102313601A CN 102313601 A CN102313601 A CN 102313601A CN 2010102287012 A CN2010102287012 A CN 2010102287012A CN 201010228701 A CN201010228701 A CN 201010228701A CN 102313601 A CN102313601 A CN 102313601A
- Authority
- CN
- China
- Prior art keywords
- infrared
- stress
- stress changes
- infrared absorption
- changing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention provides a thermal type infrared detector, which comprises an infrared absorbing element, a stress changing element and at least two electrodes, wherein the infrared absorbing element comprises a thermal expansion material; at least one part of the stress changing element is surrounded by the infrared absorbing element; and the at least two electrodes are contacted with the stress changing element. The infrared absorbing element absorbs infrared rays to raise the temperature and generate thermal expansion, so that the stress changing element connected with the infrared absorbing element is extruded; therefore, stress is generated inside the stress changing element, so that the carrier mobility of the stress changing element is changed, namely the resistivity is changed; and the stress variation of the stress changing element is represented through the variation of the resistivity, and the radiation power of the absorbed infrared rays is finally represented. The invention has the advantages that: the detector is manufactured on the basis of a silicon plane process for large-scale integrated circuits completely; and the detector has the characteristics of low cost and high yield.
Description
Technical field
The present invention relates to a kind of infrared eye, especially a kind of pattern of fever infrared eye belongs to the microelectromechanical systems field.
Background technology
Infrared eye can be divided into two types of pattern of fever and photon types by the detection method principle.The pattern of fever infrared eye is to utilize the thermal sensing element of some material to the sensitivity characteristic detection infrared energy of temperature, and the photon type infrared eye is to utilize photon effect to survey infrared energy.Wherein, the pattern of fever infrared eye realizes that one of pattern of infrared energy conversion is to utilize thermal resistance effect, and promptly metal or semiconductor absorb the infrared radiation temperature rising and cause resistance variations, characterize ir radiant power in view of the above.Compare with the photon type infrared eye, one of advantage of pattern of fever infrared eye is to be easy to make, cost is low.Therefore, develop pattern of fever infrared eye and have the industry practical value with low-cost high production.
Summary of the invention
The object of the invention is intended to one of solve the problems of the technologies described above at least, especially proposes a kind of novel pattern of fever infrared eye with low-cost high production characteristics.
For achieving the above object, the present invention proposes a kind of pattern of fever infrared eye, comprising: the infrared absorption element, and said infrared absorption element comprises thermal expansion material; The stress changes element, the said stress changes element of part is by said infrared absorption element encompasses at least; At least two electrodes contact with said stress changes element.
Preferably, said infrared absorption element comprises any one or its combination in silicon nitride, the monox.
Preferably, said stress changes element comprises semiconductor material, like polysilicon or monocrystalline silicon.
Preferably, said stress changes element is fully by said infrared absorption element encompasses.
The present invention proposes a kind of novel pattern of fever infrared eye; Absorb infrared generation temperature rise through the infrared absorption element; Thermal expansion material wherein is owing to temperature rise produces thermal expansion, thereby the stress changes element that extruding links to each other with the infrared absorption element makes this stress changes element internal produce stress; And then its carrier mobility is changed, promptly resistivity changes.Variation through resistivity characterizes the STRESS VARIATION of stress changes element, finally characterizes absorbed ir radiant power.The invention has the advantages that the manufacturing of said device has the characteristics of low-cost high production fully based on the silicon planner technology of large scale integrated circuit.
Aspect that the present invention adds and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously with easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, and accompanying drawing of the present invention is schematically, does not therefore draw in proportion.Wherein:
Fig. 1-2 is the structural representation of the pattern of fever infrared eye of the embodiment of the invention 1;
Fig. 3-4 is the structural representation of the pattern of fever infrared eye of the embodiment of the invention 2;
Fig. 5-6 is the structural representation of the pattern of fever infrared eye of the embodiment of the invention 3.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings, and wherein identical from start to finish or similar label is represented identical or similar elements or the element with identical or similar functions.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
Disclosing of hereinafter provides many various embodiment or example to be used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts and the setting of specific examples are described.Certainly, they only are example, and purpose does not lie in restriction the present invention.In addition, the present invention can be in different examples repeat reference numerals and/or letter.This repetition is in order to simplify and purpose clearly, itself not indicate the relation between various embodiment that discuss of institute and/or the setting.In addition, various specific technology and the examples of material that the invention provides, but those of ordinary skills can recognize the property of can be applicable to of other technologies and/or the use of other materials.In addition; First characteristic of below describing second characteristic it " on " structure can comprise that first and second characteristics form the embodiment of direct contact; Can comprise that also additional features is formed on the embodiment between first and second characteristics, such first and second characteristics possibly not be direct contacts.
The present invention proposes a kind of novel pattern of fever infrared eye, and its basic structure comprises infrared absorption element 200, stress changes element 300 and electrode 100, and shown in Fig. 1-2, wherein, Fig. 1 is a vertical view, and Fig. 2 is the sectional view along Figure 1A A ' direction.Wherein, Infrared absorption element 200 comprises thermal expansion material; At least part stress changes element 300 is surrounded by said infrared absorption element 200; Electrode 100 links to each other with stress changes element 300 and forms Ohmic contact, and electrode 100 is connected (not shown) with outer test circuit, is used to test the change in resistance of said stress changes element.Infrared absorption element 200 absorbs infrared generation temperature rise; Because it comprises thermal expansion material, thereby expands, because infrared absorption element 200 is connected with stress changes element 300; So changing element 300, the expansion counter stress of infrared absorption element 200 produces extruding; In stress changes element 300, introduce stress, the change of semiconductor internal stress can cause the variation of carrier mobility in the semiconductor, finally causes the variation of semiconductor resistor rate; The variation that event can be measured stress changes element 300 resistivity through electrode 100, thus characterize the power that infrared absorption element 200 absorbs infrared radiations.
In the embodiment that the present invention gave an example, infrared absorption element 200 is any one or its combination in the silicon nitride that can produce thermal expansion, the monox; Stress changes element 300 is a semiconductor material, like polysilicon or monocrystalline silicon; Electrode 100 is a metal electrode, like electrode materials such as aluminium, nickel, titanium nitride, tungsten, Alpaxs.Below will provide various embodiment to concrete device architecture.
In a preferred embodiment (embodiment 1); Stress changes element 300 is a rectangular structure; Infrared absorption element 200 forms complete investing mechanism to it on two opposites of this rectangular parallelepiped maximum area, purpose is to form and is easy to most said stress changes element 200 is produced the contact structures of extruding, and electrode 100 is positioned on the two ends of stress changes element 300; And with its formation Ohmic contact, shown in Fig. 1-2.Certainly; The preferred embodiment can have the replacement structure of effects equivalent; For example Fig. 3-4 shows the structural representation (embodiment 2) that other a kind of stress changes element 300 is surrounded by infrared absorption element 200 fully, and Fig. 3 is a vertical view, and Fig. 4 is the sectional view along AA ' direction among Fig. 3.Wherein, stress changes element 300 is a right cylinder, and infrared absorption element 200 forms complete investing mechanism to it on this cylindrical sidewall, and electrode 100 forms Ohmic contact with this right cylinder upper surface or lower surface.
In another embodiment of the present invention (embodiment 3), infrared absorption element 200 can change element 300 by the part ambient stress, and shown in Fig. 5-6, wherein, Fig. 5 is a vertical view, and Fig. 6 is the sectional view along AA ' direction among Fig. 5.Stress changes element 300 is a rectangular structure; Wherein AA ' direction is a long side direction; BB ' direction is a broadside, and infrared absorption element 200 forms the part investing mechanism to it on two opposites of AA ' direction, and electrode 100 forms Ohmic contact with stress changes element 300.This structure can realize that equally infrared absorption element 200 intensification expansion counter stresses change element 300 and produce the effect of extruding.Be with noting; The various structures that the present invention proposes only are used to describe each preferred embodiment, and do not lie in limit the present invention can only pass through more than cited structure realize; All be included in protection scope of the present invention for other structure conversion that possesses identification, repeat no more at this.
Pattern of fever infrared eye according to each embodiment of the present invention; Absorb the infrared temperature rising through the infrared absorption element and produce thermal expansion; Thereby the stress changes element that links to each other with the infrared absorption element of extruding makes this stress changes element internal generation stress, and then to make its carrier mobility be that resistivity changes; Variation through measured resistivity characterizes the STRESS VARIATION of stress changes element, finally characterizes absorbed ir radiant power.The invention has the advantages that the manufacturing of said device has the characteristics of low-cost high production fully based on the silicon planner technology of large scale integrated circuit.
Although illustrated and described embodiments of the invention; For those of ordinary skill in the art; Be appreciated that under the situation that does not break away from principle of the present invention and spirit and can carry out multiple variation, modification, replacement and modification that scope of the present invention is accompanying claims and be equal to and limit to these embodiment.
Claims (6)
1. a pattern of fever infrared eye is characterized in that, comprising:
The infrared absorption element, said infrared absorption element comprises thermal expansion material;
The stress changes element, the said stress changes element of part is by said infrared absorption element encompasses at least; With
At least two electrodes contact with said stress changes element.
2. infrared eye as claimed in claim 1 is characterized in that, said infrared absorption element comprises any one or its combination in silicon nitride, the monox.
3. infrared eye as claimed in claim 1 is characterized in that, said stress changes element comprises semiconductor material.
4. infrared eye as claimed in claim 3 is characterized in that said semiconductor material comprises any one in polysilicon, the monocrystalline silicon.
5. infrared eye as claimed in claim 1 is characterized in that said electrode is connected with test circuit, is used to test the change in resistance of said stress changes element.
6. infrared eye as claimed in claim 1 is characterized in that, said stress changes element is fully by said infrared absorption element encompasses.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010228701 CN102313601B (en) | 2010-07-09 | 2010-07-09 | Thermal type infrared detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010228701 CN102313601B (en) | 2010-07-09 | 2010-07-09 | Thermal type infrared detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102313601A true CN102313601A (en) | 2012-01-11 |
| CN102313601B CN102313601B (en) | 2013-07-10 |
Family
ID=45426969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010228701 Active CN102313601B (en) | 2010-07-09 | 2010-07-09 | Thermal type infrared detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102313601B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114397025A (en) * | 2020-10-22 | 2022-04-26 | 中国兵器工业试验测试研究院 | Standard radiation source for calibration of characteristics of external field target |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107822641A (en) * | 2017-10-27 | 2018-03-23 | 西安科技大学 | A kind of sole stress dynamic measurement device and method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080251723A1 (en) * | 2007-03-12 | 2008-10-16 | Ward Jonathan W | Electromagnetic and Thermal Sensors Using Carbon Nanotubes and Methods of Making Same |
| KR100869548B1 (en) * | 2008-05-20 | 2008-11-19 | 아이쓰리시스템 주식회사 | Bolometric infrared sensor improved signal to noise ratio(snr) and thereof |
-
2010
- 2010-07-09 CN CN 201010228701 patent/CN102313601B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080251723A1 (en) * | 2007-03-12 | 2008-10-16 | Ward Jonathan W | Electromagnetic and Thermal Sensors Using Carbon Nanotubes and Methods of Making Same |
| KR100869548B1 (en) * | 2008-05-20 | 2008-11-19 | 아이쓰리시스템 주식회사 | Bolometric infrared sensor improved signal to noise ratio(snr) and thereof |
Non-Patent Citations (1)
| Title |
|---|
| 杨拥军 等: "硅微机械电子隧穿红外探测器", 《固体电子学研究与进展》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114397025A (en) * | 2020-10-22 | 2022-04-26 | 中国兵器工业试验测试研究院 | Standard radiation source for calibration of characteristics of external field target |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102313601B (en) | 2013-07-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103708406B (en) | It is a kind of can insulation package stress resonant mode infrared detector structure and production method | |
| CN102313601B (en) | Thermal type infrared detector | |
| CN106052909A (en) | Novel no-cavity graphene high temperature pressure sensor | |
| CN102003998A (en) | High-sensitivity uncooled infrared detector | |
| CN104089717A (en) | Thermopile | |
| CN205879412U (en) | Novel graphite alkene high -temperature pressure sensor of no cavity | |
| CN106289540A (en) | Infrared thermal release electric sensing unit and pyroelectric infrared sensor | |
| KR101677717B1 (en) | The MEMS thermopile sensor and Method of fabricating the same | |
| WO2005079208A3 (en) | Uncooled cantilever microbolometer focal plane array with mk temperature resolutions and method of manufacturing microcantilever | |
| KR20110105261A (en) | Electrical device and thermal image sensor embedding at least one quantum | |
| US20160097675A1 (en) | Combined leg structure of micro bridge unit of focal plane array | |
| CN206412369U (en) | Terahertz alignment detection device | |
| CN202693780U (en) | Reference source microwave window of microwave radiometer | |
| CN205352425U (en) | Infrared sensing device | |
| CN202084527U (en) | Novel transistor structure | |
| CN204085703U (en) | A kind of infrared sensor | |
| CN212807369U (en) | Infrared temperature thermocouple | |
| CN109524534B (en) | Double-layer MEMS thermopile structure | |
| CN103913241B (en) | Non-brake method reads structure of controlling temperature and the method for Infrared FPA detector without substrate light | |
| CN208520478U (en) | A kind of optothermal detector of detectable optical field distribution | |
| CN105393096B (en) | Field-effect transistor infrared sensor with mobilizable grid | |
| CN204680140U (en) | Based on the differential type infrared intrusion detector of MEMS technology | |
| CN104515601B (en) | Platinum electrode negative tempperature coefficient thermistor hemisphere microballon infrared focal plane array panel | |
| CN201561801U (en) | Full hollow type light modulation thermal imaging focal planar array having silicon support frame | |
| Wang et al. | 3D-FEM electrical–thermal–mechanical analysis and experiment of Si-based MEMS infrared emitters |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |