CN102315064B - Magnetron and thin film deposition treatment equipment applying same - Google Patents
Magnetron and thin film deposition treatment equipment applying same Download PDFInfo
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- CN102315064B CN102315064B CN201010224956.1A CN201010224956A CN102315064B CN 102315064 B CN102315064 B CN 102315064B CN 201010224956 A CN201010224956 A CN 201010224956A CN 102315064 B CN102315064 B CN 102315064B
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Abstract
The invention provides a magnetron, which comprises a center magnetic control partition, an edge magnetic control partition and a driving mechanism, wherein the driving mechanism can synchronously or independently drive magnetic body groups in the center magnetic control partition and the edge magnetic control partition and make the magnetic body groups run in the own magnetic control partition according to predetermined tracks. The magnetron can effectively increase the metal atom ionization rate of the whole target region, particularly an edge region, so as to improve the hole filling uniformity of the edge region of a substrate. Furthermore, the invention also provides thin film deposition treatment equipment applying the magnetron.
Description
Technical field
The present invention relates to microelectronics technology, particularly, relate to a kind of magnetron and apply the thin film deposition process equipment of this magnetron.
Background technology
In modern industry, the level of microelectronic processing technique has obtained unprecedented achievement.Integrated circuit is a kind of typical microelectronic product, it by processing the fine structure such as hole, groove of various shapes on silicon chip, then form the microelectronic elements such as small transistor by fill different materials in above-mentioned hole and groove, and by metal interconnection layer, each microelectronic element is coupled together according to different electrology characteristics, finally form large-scale integrated circuit.Wherein, in the production process of integrated circuit, the production technology of the related metal interconnecting layer such as copper, aluminium all need to be achieved by sputtering technology.
Along with the development of microelectric technique and constantly dwindling of characteristic size, in sputtering technology, the dark/through hole of wide larger (ratio of the hole degree of depth and width is greater than 1) and the filling capacity of narrow channel are seemed to further important.But, the deposition direction of the uncontrollable sputtering particle of conventional sputter technology, thereby cannot complete smoothly the filling to dark/wide larger through hole and narrow channel.As shown in Figure 1, while adopting conventional sputter technique to carry out pore filling, be easy to occur such problem:, in the time that the filling at hole bottom corners place not yet completes, has piled up a large amount of filler (be called top-hung in industry and hang phenomenon) and hole has been sealed completely at hole top corner place, thereby hinder, the continuation of hole inside is filled.
In order to address the above problem, plasma magnetron sputtering (Magnetron Sputtering) technology is arisen at the historic moment, it can make the metallic atom ionization sputtering, and by controlling energy and the direction of motion of metal ion, it is successfully entered and filling pore sidewall, thereby improve the Step Coverage ability to dark/wide larger through hole and narrow channel.
Referring to Fig. 2, is the principle schematic of magnetron sputtering technique.Magnetron sputtering is a kind of high efficiency sputtering technology, its principle is: utilize magnetron between substrate and sputtering target material, to load the magnetic field crossing with electric field, with the range of movement of restriction electronics and extend the movement locus of electronics, make electronics ionization argon gas atmo and form argon ion to greatest extent, argon ion bombards and then makes target material depart from target material surface with the state of metallic atom or ion target material surface.
In above-mentioned magnetron sputtering technique, the ionization level of metallic atom is an important indicator.The ionization level of so-called metallic atom refers to the metallic shared ratio in all metallics that are sputtered out that departs from target with ionic condition.As shown in Figure 3, between the shooting angle of the metallic atom of unionization and substrate normal direction, can there is certain angle, and neutral metallic atom is not easy to be subject to the control of lower electrode bias, thereby the angle during still according to particle outgoing enters in hole in pore filling process, thereby there is the pore filling result shown in Fig. 3: the metallic majority depositing near the hole (two holes of A and C in figure) substrate edge is the target near one side top, center from this hole, again because the majority in above-mentioned metallic enters in hole with shooting angle, thereby the metallic that causes hole to deposit on the close sidewall of substrate edge is more with respect to the metallic depositing on the close sidewall of substrate center, and finally cause being deposited on keep to the side in the hole thickness of metal film of a side and be obviously greater than the film thickness near center one side, there is the asymmetric problem of pore filling.As can be seen here, the ionization level of increase metallic atom plays vital effect to the pore filling uniformity of sputtering technology; And whether the structural design of magnetron rationally will directly affect the ionization result to metallic atom in sputter procedure.
Refer to Fig. 4, wherein show a kind of existing magnetron structures.In this magnetron, drive magnet group 84 to carry out the orbiting motion of asteroid formula as shown in Figure 5 by one group of planet circular system (fixed gear 72, drive 76, moving gear 78, master arm 74 and slave arm 80) transmission mechanism.So-called asteroid track refers to, a kind of running orbit that motor point is carried out around the center of planet circular system around the track of Stellar rotation with asteroid in being similar to universe under the drive of planet circular system.In sputter procedure, the upper power majority that is loaded into target can be concentrated in the magnetic field range of magnet group 84, because magnet group 84 pole dimension are less, thereby target power is constrained in very little scope, therefore the plasma area below magnet group 84 has very high power density, thus can improve moment magnet group 84 through the target atom ionization level in region.Meanwhile, by transmission mechanism, magnet group 84 runs up with desired trajectory as shown in Figure 5 magnetron, so that above-mentioned magnet group 84 completes scanning to whole target region within the short as far as possible time, thereby shorten the scan period as far as possible, make target regional all there is higher metallic atom ionization level.The described scan period refers to that magnet group completes the single pass duration used that circulates in its running orbit.
Although above-mentioned magnetron can improve the ionization level of target atom to a certain extent, inevitably there is following shortcoming in it:
One, can find out by the running orbit shown in Fig. 5, and the magnet group in above-mentioned magnetron, in the time that target region is scanned, is starkly lower than the scanning density to target center region for the scanning density of target fringe region.This just directly causes the ionization level of target fringe region metallic atom will be starkly lower than the ionization level of target center regional metal atom, and then causes the asymmetric problem of pore filling thickness of the substrate edge shown in Fig. 3.In the time that this magnetron is applied to large-sized target as sputter technique, the problems referred to above will be more obvious.
Its two, along with improving constantly of technological level, sizes of substrate will increase to 450mm gradually, corresponding target size can increase to 650～700mm thereupon.Now, the scanning area of magnetron also will be multiplied, if will make the scan period of magnetron constant, will significantly improve the speed of service of magnetron.But, after significantly improving, the speed of service of magnet group is just difficult to control its running precision, if can not ensure the running precision of magnet group, also just cannot obtain uniform Distribution of Magnetic Field at target material surface, the uniformity of this metal ion to overall target by impact.If and do not improve the speed of service of magnet group, will certainly extend the scan period of magnet group, this may occur that technique duration is less than the situation of magnet group scan period, , when technique finishes, magnet group has only completed scanning to part target region, the metal ionization level in the target region being scanned will be apparently higher than the metal ionization level in the target region not being scanned, accordingly, the target region being scanned the uniformity of pore filling of corresponding substrate region also can be better, but the uniformity of the pore filling of the corresponding substrate region in target region not being scanned is relatively poor, have a strong impact on the most at last the pore filling quality of substrate entirety.Therefore, the magnetron of said structure cannot meet the sputtering technology requirement of large size substrate, particularly 450mm and above size substrate.
Summary of the invention
For addressing the above problem, the invention provides a kind of magnetron, it can make target fringe region obtain higher metallic atom ionization level, thereby the hole in the each region of substrate all can well be filled, and can meet the sputtering technology requirement of large size substrate.
For addressing the above problem, the present invention also provides a kind of thin film deposition process equipment of applying above-mentioned magnetron, its same its can make target fringe region obtain higher metallic atom ionization level, thereby the hole in the each region of substrate all can well be filled, and can meet the sputtering technology requirement of large size substrate.
For this reason, the invention provides a kind of magnetron, for form equally distributed magnetic field at target material surface, described magnetron comprises: center magnetic control subregion, and it has the center magnet group that applies magnetic field corresponding to target center region; Edge magnetic control subregion, it arranges around described center magnetic control subregion, has the edge magnets group that applies magnetic field corresponding to target fringe region; Driving mechanism, it comprises the central drive mechanism being connected with described center magnet group and the edge driving mechanism being connected with described edge magnets group, described central drive mechanism and edge driving mechanism can synchronously or independently drive described center magnet group and edge magnets group to move along projected path in magnetic control subregion separately, form equally distributed magnetic field with central area and the fringe region at described target respectively.
Wherein, described edge magnets group comprises the small magnet of radially multiple and/or circumferential array and is covered with described edge magnetic control subregion, and wherein, the N of adjacent small magnet, S level are staggered; Described edge magnets group rotatablely moves as circumference taking target center as rotating shaft under the driving of described edge driving mechanism.
Wherein, described edge magnets group comprises the sub-magnet group in multiple independently edges, and the sub-magnet group in each edge comprises again inner magnet and the multiple outer magnets around described inner magnet, and described outer magnet is contrary with the polarity of the magnetic pole of close target one side on described inner magnet; The sub-magnet group in each edge rotatablely moves as circumference taking target center as rotating shaft under the driving of edge driving mechanism.
Wherein, described center magnet group comprises the small magnet of radially multiple and/or circumferential array and is covered with described center magnetic control subregion, and wherein, the N of adjacent small magnet, S level are staggered; Described center magnet group rotatablely moves as circumference taking target center as rotating shaft under the driving of central drive mechanism.
Wherein, described center magnet group comprises an inner magnet and the multiple outer magnets around described inner magnet, and described outer magnet is contrary with the polarity of the magnetic pole of close target one side on described inner magnet; Described center magnet group rotatablely moves as circumference taking target center as rotating shaft under the driving of central drive mechanism, or, do asteroid orbiting motion around target center.
Wherein, described center magnet group comprises the multiple small magnets that are arranged on fan, and N, the S level of adjacent small magnet are staggered; Or, be positioned on the small magnet of fan-shaped home position near the pole polarity of target one side be arranged in the small magnet of fan-shaped other position on the polarity of close target one side contrary; Described center magnet group rotatablely moves as circumference taking target center as rotating shaft under the driving of central drive mechanism.
Wherein, described center magnet group comprises two middle center magnet groups, described two middle center magnet groups comprise respectively an inner magnet and the multiple outer magnets around described inner magnet, and described outer magnet is contrary with the polarity of the magnetic pole of close target one side on described inner magnet; Described two middle center magnet groups rotatablely move as circumference taking target center as rotating shaft.
Wherein, described center magnet group and edge magnets group are carried out synchronous circumference and are rotatablely moved under the driving of described driving mechanism taking described target center as rotating shaft.
Wherein, described center magnet group and edge magnets group self-movement and uncorrelated mutually in magnetic control subregion separately under the driving of described central drive mechanism and edge driving mechanism respectively.
In addition, the present invention also provides a kind of thin film deposition process equipment, comprises processing chamber and is arranged on the target of processing chamber top, is provided with the magnetron that the invention described above provides, in order to form equally distributed magnetic field at described target material surface above described target.
Wherein, described thin film deposition process equipment is Pvd equipment.
The present invention has following beneficial effect:
First, magnetron provided by the invention, has center magnetic control subregion and edge magnetic control subregion, is separately positioned on magnet group in center magnetic control subregion and edge magnetic control subregion and can be synchronously or driving mechanism that described in drive, center magnet group and edge magnets group are moved along desired trajectory in magnetic control subregion separately.Magnetron provided by the invention, can need to carry out independent control to the ruuning situation of the magnet group in target center and fringe region according to actual process, in the time that the metallic atom ionization level of target edge or central area is lower, can be by taking the speed of service of the driving mechanism that strengthens this region, the mode of scanning density and increase number of magnets and density etc., and make to obtain in region that original metallic atom ionization level is lower more target power, thereby improve the metallic atom ionization level in this region, and then asymmetric etc. the problem of the pore filling thickness of avoiding occurring substrate edge region.
Its two, magnetron provided by the invention is owing to having center magnetic control subregion and edge magnetic control subregion, and the movement locus of magnet group in Ke Dui center magnetic control subregion and edge magnetic control subregion is controlled respectively.Therefore,, in the time being applied to 450mm and larger sized substrate sputtering technology, although the area of whole target increases to some extent, the area in the target region that center magnetic control subregion and edge magnetic control section post are corresponding is also little.Therefore,, while utilizing magnetron provided by the invention to carry out sputtering technology, without improving the speed of service of each magnet group, thereby can effectively ensure the scanning accuracy of magnet group; And, do not improving under the prerequisite of sweep speed, still can within the shorter scan period, complete the scanning to whole target region, thereby ensure the Ionized uniformity of the metallic atom in target regional in technical process, and then ensure uniformity and the symmetry of substrate pore filling.
In addition, in a preferred embodiment of the invention, by number of magnets, the parameters such as density of arranging in edge magnetic control subregion and the center magnetic control subregion of adjustment magnetron, can control Distribution of Magnetic Field and the power density distribution of target material surface, thereby make target power concentrate on more target fringe region, to strengthen the Ionization of the metallic atom to target fringe region, and then improve uniformity and the symmetry of the pore filling in substrate edge region.
As another kind of technical scheme, thin film deposition process equipment provided by the invention, due to the magnetron that has adopted the invention described above to provide in its processing chamber, therefore, it can ensure under the prerequisite of magnet group running precision equally, effectively improve the metallic atom ionization level in target as sputter process, especially can effectively improve the metallic atom ionization level of target fringe region, thereby improve uniformity and the symmetry of the pore filling in substrate edge region.
Brief description of the drawings
Phenomenon schematic diagram is hung in the top-hung that Fig. 1 occurs when the hole of high-aspect-ratio filling for employing conventional sputter technique;
Fig. 2 is the principle schematic of magnetron sputtering technique;
Fig. 3 is the filling schematic diagram of not ionizable metallic atom to substrate hole in the middle of sputtering technology;
Fig. 4 is current existing a kind of magnetron structures schematic diagram;
Fig. 5 is the movement locus schematic diagram of the magnet group in the magnetron of structure shown in Fig. 4;
Fig. 6 is the structural representation of magnetron the first specific embodiment provided by the invention;
Fig. 7 is the structural representation of the center magnet group 106 in magnetron shown in Fig. 6;
Fig. 8, Fig. 9, Figure 11 and Figure 12 are respectively the structural representation of five kinds of specific embodiments of magnetron the second to the provided by the invention; And
Figure 10 is the schematic diagram of the another kind of magnet arrangement mode of the center magnet group 106 of magnetron shown in Fig. 9.
Embodiment
For making those skilled in the art understand better technical scheme of the present invention, below in conjunction with accompanying drawing, magnetron provided by the invention and the thin film deposition process equipment of applying this magnetron are described in detail.
Magnetron provided by the present invention, in plasma sputtering technique, makes target material surface form equally distributed magnetic field, thereby improves the ionization level of metallic atom.Described magnetron comprises: center magnetic control subregion, and it has the center magnet group that applies magnetic field corresponding to target center region; Edge magnetic control subregion, it arranges around center magnetic control subregion, and has the edge magnets group that applies magnetic field corresponding to target fringe region; Driving mechanism, it comprises the central drive mechanism being connected with center magnet group and the edge driving mechanism being connected with edge magnets group, central drive mechanism and edge driving mechanism can synchronously or independently drive center magnet group and edge magnets group to move along projected path in magnetic control subregion separately, form equally distributed magnetic field with central area and the fringe region at target respectively.
In actual applications, above-mentioned center magnet group, edge magnets group and driving mechanism can be arranged in special housing.Central drive mechanism and edge driving mechanism comprise respectively: for the mechanical parts such as CD-ROM drive motor, bearing, drive link and the travelling gear of power are provided, center magnet group and edge magnets group are connected with drive link or the travelling gear of central drive mechanism and edge driving mechanism respectively, and move according to projected path under the drive of CD-ROM drive motor.Particularly, can make center magnet group and the synchronous operation of edge magnets group, also can make the two to there is the running orbit of certain correlation and independent operating, or, can also make the two with diverse running orbit independent operating.
Referring to Fig. 6, is the structural representation of magnetron the first specific embodiment provided by the invention.The central drive mechanism of magnetron is one group of transmission mechanism with asteroid track, comprise with the center fixed gear 101 of the concentric setting of target, through fixed gear 101 center, center and can be around the center driving bar 102 of this central rotation, be arranged on planetary gear 103 that center driving bar 102 other end Bing Yu center fixed gears engage, be fixed on the Gear Planet Transmission bar 105 on planetary gear 103 and be separately positioned on center magnet group 106 and the counterweight 104 at Gear Planet Transmission bar 105 two ends.Its running is: center driving bar 102 rotates, drive planetary gear 103 to rotate around center fixed gear 101, simultaneously, due to the engagement of center fixed gear, there is autobiography in planetary gear 103, and drive Gear Planet Transmission bar 105 synchronous rotary with it, thereby the center magnet group 106 that is positioned at Gear Planet Transmission bar 105 one end is moved along asteroid formula track.Here, counterweight 104 also can change another magnet group identical with center magnet group 106 into, and it is rotated around target center with asteroid formula track equally.
Refer to Fig. 7, above-mentioned center magnet group 106 comprises an inner magnet 61 and multiple inner magnet 61 outer magnet 62 around that is looped around, each outer magnet 62 is identical near the pole polarity of target one side and be the N utmost point, and above-mentioned inner magnet 61 is the S utmost point in the pole polarity near target one side, contrary with each outer magnet 62.It is pointed out that in the present embodiment, the quantity of outer magnet 62 is 12, but the present invention is not limited thereto, and those skilled in the art can choose arbitrarily the quantity of outer magnet 62 as required; And, also can make each outer magnet 62 be made as the S utmost point in the pole polarity near target one side, be the N utmost point and make inner magnet 61 in the pole polarity near target one side.
The edge magnets group of magnetron comprise be covered with edge magnetic control subregion 20 multiple radially with the small magnet of circumferential array, wherein, the N of adjacent small magnet, S level are staggered, thereby between adjacent small magnet, form the magnetic field of sealing.Particularly, each small magnet is radial arrangement along target radial direction, and upwards form multiple annulars in week, and small magnet quantity in each annular is identical, each small magnet and its circumferentially and footpath upwards adjacent small magnet be contrary in the polarity of the magnetic pole of close target one side.Here, arrangement mode for the small magnet in edge magnets group is not limited to this, for example can also make each small magnet form multiple annulars in edge magnetic control subregion, and circumferentially closely arranged in the small magnet edge in each annular, conventionally the more small magnet of can arranging on the larger circumference of radius, thus the small magnet quantity in each annular is increased along with the increase of this annular radius.
Driving for edge magnets group is relatively simple, only need make edge magnets group in edge magnetic control subregion, carry out circumference taking target center as rotating shaft rotatablely moves, this rotatablely moves and can adopt clockwise mode, also can adopt counterclockwise mode, the mode that can also adopt clockwise and hocket counterclockwise.Now, edge driving mechanism can adopt CD-ROM drive motor directly to drive the mode of center magnet group rotation to drive.
It should be noted that, in magnetron provided by the present invention, in center magnet group and edge magnets group, densely covered small magnet is cylinder, the two poles of the earth that these cylindrical two ends are magnet, due to the magnetic field intensity maximum of the near surface of magnetic pole, therefore in installation process, the just direction to target and arranging of the magnetic pole that conventionally makes small magnet, to obtain stronger Distribution of Magnetic Field at target material surface as far as possible.
Above-mentioned magnetron is in the time carrying out sputtering technology, and its center magnet group 106 is moved in the magnetic control subregion of center with asteroid track under the drive of central drive mechanism; Meanwhile, edge magnets group is carried out circumference around target center and is rotatablely moved under the drive of edge driving mechanism.In the time need to increasing the metallic atom ionization level of target center or fringe region, can suitably adjust the speed of service, the magnet of this region inner magnet group arranges the parameters such as density and increases the magnetic field intensity in this region, thereby the corresponding raising of the ionization level that makes metallic atom, and then obtain good pore filling result at substrate surface.And, in the time that magnetron provided by the invention is being applied to the sputtering technology of large scale (450mm and more than) substrate, because center magnetic control subregion and the target area corresponding to edge magnetic control section post of magnetron are not large especially, thereby can ensure to complete within a short period of time to the scanning of magnetic control subregion separately without the speed of service that significantly improves magnet group, thereby the running precision that had both ensured scanning, has again the shorter scan period; And then in guarantee technical process, make the metallic atom ionization level maintenance of target regional all even stable, avoid the problem of the asymmetric grade of pore filling in substrate edge region.
Referring to Fig. 8, is the structural representation of magnetron the second specific embodiment provided by the invention.In the present embodiment, the central drive mechanism in the center magnetic control subregion 10 of magnetron and the structure of center magnet group are identical or similar with the first embodiment shown in above-mentioned Fig. 6 and Fig. 7 with operational mode, do not repeat them here.
In the edge magnetic control subregion 20 that the present embodiment provides, edge magnets group comprises the sub-magnet group in multiple independently edges, the sub-magnet group in each edge comprises again inner magnet and the multiple outer magnets around inner magnet, outer magnet is contrary with the polarity of the magnetic pole of close target one side on inner magnet, here, the structure of the center magnet group 106 in the first specific embodiment shown in structure and above-mentioned Fig. 7 of the sub-magnet group in edge is similar, therefore repeats no more.Certainly, the structure of the sub-magnet group in described edge can also have multiple modification, and the quantity of the sub-magnet group in edge also can have multiple choices.The present embodiment is compared with above-mentioned the first embodiment, the number of magnets of target fringe region top is less, and the transient magnetic field area of target material surface is less, therefore under Same Efficieney condition, the instantaneous power of overlay area, magnetic field is larger, thereby can obtain relatively high metallic atom ionization level.
Edge driving mechanism in the present embodiment specifically can comprise following two parts: one, edge main driving mechanism for driving each edge magnet group to rotatablely move as circumference taking target center as rotating shaft; Two, for driving the sub-magnet group in each edge that the secondary driving mechanism in edge of rotation occurs centered by inner magnet separately.Here, the secondary driving mechanism in described edge main driving mechanism and edge can adopt multiple mechanical structure and realize, and these mechanical structures are conventional known technology, thereby repeats no more.
In addition, the magnetron that the present embodiment provides can effectively improve equally the metallic atom ionization level of target center and fringe region in actual process, thereby avoids the problem of the asymmetric grade of pore filling thickness that occurs substrate edge region; And in the time being applied to large-sized substrate, without increasing the magnet group speed of service, can ensureing the shorter scan period equally, thereby meet the requirement of sputtering technology.
Referring to Fig. 9, is the structural representation of the third specific embodiment of magnetron provided by the invention.The edge magnets group adopting in the present embodiment is identical or similar with the first embodiment shown in above-mentioned Fig. 6.Difference is, the center magnet group 106 in this enforcement has the support of a sector structure, is placed with multiple small magnets on this fan, and N, the S level of adjacent small magnet are staggered.The radius of above-mentioned fan and the radius of center magnetic control subregion 10 equate or are slightly less than the radius of center magnetic control subregion 10.Described fan-shaped center magnet group 106 rotatablely moves as circumference taking target center as rotating shaft under the driving of central drive mechanism, particularly, can make the small magnet that is positioned at fan-shaped home position overlap with target center, then making this fan-shaped center magnet group 106 do circumference around the center of circle of himself rotatablely moves, often rotate a circle and complete the once scanning to whole center magnetic control subregion 10, this center magnet group 106 rotate a circle duration used centered by scan period of magnetic control subregion 10.Compare the operational mode of the asteroid track in above-described embodiment, the operation stability of the center magnet group in the present embodiment can be more better.In addition, in the present embodiment, can also there is multiple modification to the arrangement mode of each small magnet in center magnet group, for example make to be positioned on the small magnet of fan-shaped home position the pole polarity near target one side contrary with the small magnet that is arranged in fan-shaped other position, it can be specifically the arrangement mode shown in Figure 10, , the N utmost point of the small magnet that is positioned at fan-shaped home position and the contiguous center of circle is arranged towards target direction, and the S utmost point of the small magnet of fan-shaped other position is arranged towards target direction, particularly, can make the N utmost point of three small magnets that are positioned at region, the fan-shaped center of circle towards target, and make the S utmost point of the small magnet beyond region, the fan-shaped center of circle towards target.The difference of two kinds of arrangement modes shown in Fig. 9 and Figure 10 is, the Distribution of Magnetic Field forming is slightly different, is specially, and closure can be carried out in the magnetic field that the magnet group that adjacent small magnet is arranged with N, S level interlace mode is formed between each adjacent small magnet; Closed between small magnet beyond the small magnet in the region, the Ze center of circle, magnetic field that the magnet group shown in Figure 10 forms and region, the center of circle.Except the structure of center magnet group is different with operational mode, the present embodiment has advantages of same with above-mentioned the first embodiment.
Referring to Figure 11, is the structural representation of the 4th kind of specific embodiment of magnetron provided by the invention.Center magnet group 106 in the present embodiment comprises two middle center magnet groups (106a and 106b as shown in the figure), described two middle center magnet groups respectively comprise an inner magnet and the multiple outer magnets around described inner magnet, described outer magnet is contrary with the polarity of the magnetic pole of close target one side on described inner magnet, particularly, the structure of above-mentioned two middle center magnet groups is identical or similar with the magnet group structure shown in Fig. 7.In the course of the work, these two middle center magnet groups rotatablely move as circumference taking target center as rotating shaft.Certainly, the center magnet group 106 in the present embodiment also can only retain a middle center magnet group, and center magnet group in another is removed or changed into the counter weight construction of equal volume and weight.It is to be noted, the middle center magnet group adopting in this enforcement also can adopt other structure, for example, adopt the fan-shaped center magnet group shown in Fig. 9 and Figure 10, particularly, can make two fan-shapedly taking target center as symmetrical centre setting, and be rotated around target center.
Referring to Figure 12, is the structural representation of the 5th kind of specific embodiment of magnetron provided by the invention.Edge magnetic control subregion in this enforcement is identical or similar with the edge magnetic control subregion of the first embodiment shown in above-mentioned Fig. 6, thereby repeats no more.In the present embodiment, center magnet group is a kind of structure at center magnetic control subregion 10 interior densely covered small magnets, and the N of each adjacent small magnet, S are extremely staggered.In the time of normal work, this center magnet group rotatablely moves as circumference taking target center as rotating shaft, in the present embodiment, can make center magnet group and edge magnets group carry out synchronous circumference taking target center as rotating shaft rotatablely moves, certainly, also can make the rotation of the two asynchronous, or make the two along contrary reverse rotation, or, make the two rotate in opposite direction etc. and all can with different rotating speeds.That is to say, can make the self-movement and uncorrelated mutually in magnetic control subregion separately under the driving of central drive mechanism and edge driving mechanism respectively of center magnet group and edge magnets group.
Because target power can be in Distribution of Magnetic Field set of regions, and center magnet group in the present embodiment and edge magnets group are the structure of the small magnet that gathers, therefore in technical process, target power can and be arranged density and distribute between target center and edge according to the quantity of the small magnet in center magnet group and edge magnets group, that is to say, if wish that target power density that fringe region obtains is higher, just can edge magnets group be arranged closelyer, and make the quantity of small magnet in edge magnets group more.
In sum, magnetron provided by the invention is owing to having center magnetic control subregion and the edge magnetic control subregion that can control respectively, therefore not only can effectively improve the metallic atom ionization level of target center or fringe region, and in the time being applied to the sputtering technology of large size substrate, also can ensure the shorter scan period without the speed of service that significantly improves magnet group, thereby effectively improve the uniformity to large-size target sputter, and then ensured uniformity and the symmetry of the pore filling in the each region of substrate.In addition, in some preferred embodiments, can also be by adjusting number of magnets, the parameters such as density of arranging in edge magnetic control subregion and center magnetic control subregion, and Distribution of Magnetic Field and the power density distribution of control target material surface, thereby make target power concentrate on more target fringe region, to strengthen the Ionization of the metallic atom to target fringe region.
It is to be noted, in actual applications, can also a kind of two-region target with central area and fringe region be set accordingly for magnetron provided by the invention, and make the central area of this two-region target and the center magnetic control subregion of magnetron corresponding, make the fringe region of two-region target and the edge magnetic control subregion of magnetron corresponding.Now, can load different power supplys and select different power for central area and the fringe region of two-region target, to control better the metallic atom ionization level at target edge and center.Wherein, the power supply type that is loaded on target center region and fringe region comprises DC power supply, pulse dc power, intermediate frequency power supply or radio-frequency power supply.
As another kind of technical scheme, the present invention also provides a kind of thin film deposition process equipment, it comprises processing chamber and is arranged on the target of processing chamber top, is provided with the magnetron that the invention described above provides, in order to form equally distributed magnetic field at described target material surface above described target.In actual applications, this thin film deposition process equipment can be specifically a kind of Pvd equipment, more specifically, can be a kind of plasma sputtering treatment facility.
Based on same reason, thin film deposition process equipment provided by the invention can make target center or fringe region obtain higher metallic atom ionization level equally, thereby the hole in the each region of substrate all can well be filled, and can meet the sputtering technology requirement of large size substrate.
Be understandable that, above execution mode is only used to principle of the present invention is described and the illustrative embodiments that adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (11)
1. a magnetron, for form equally distributed magnetic field at target material surface, is characterized in that, described magnetron comprises:
Center magnetic control subregion, it has the center magnet group that applies magnetic field corresponding to target center region;
Edge magnetic control subregion, it arranges around described center magnetic control subregion, has the edge magnets group that applies magnetic field corresponding to target fringe region;
Driving mechanism, it comprises the central drive mechanism being connected with described center magnet group and the edge driving mechanism being connected with described edge magnets group, described central drive mechanism and edge driving mechanism can synchronously or independently drive described center magnet group and edge magnets group to move along projected path in magnetic control subregion separately, form equally distributed magnetic field with central area and the fringe region at described target respectively.
2. magnetron according to claim 1, is characterized in that, described edge magnets group comprises the small magnet of radially multiple and/or circumferential array and be covered with described edge magnetic control subregion, and wherein, the N of adjacent small magnet, S level are staggered; Described edge magnets group rotatablely moves as circumference taking target center as rotating shaft under the driving of described edge driving mechanism.
3. magnetron according to claim 1, it is characterized in that, described edge magnets group comprises the sub-magnet group in multiple independently edges, the sub-magnet group in each edge comprises again inner magnet and the multiple outer magnets around described inner magnet, and described outer magnet is contrary with the polarity of the magnetic pole of close target one side on described inner magnet; The sub-magnet group in each edge rotatablely moves as circumference taking target center as rotating shaft under the driving of edge driving mechanism.
4. magnetron according to claim 1, is characterized in that, described center magnet group comprises the small magnet of radially multiple and/or circumferential array and be covered with described center magnetic control subregion, and wherein, the N of adjacent small magnet, S level are staggered; Described center magnet group rotatablely moves as circumference taking target center as rotating shaft under the driving of central drive mechanism.
5. magnetron according to claim 1, is characterized in that, described center magnet group comprises an inner magnet and the multiple outer magnets around described inner magnet, and described outer magnet is contrary with the polarity of the magnetic pole of close target one side on described inner magnet; Described center magnet group rotatablely moves as circumference taking target center as rotating shaft under the driving of central drive mechanism, or, do asteroid orbiting motion around target center.
6. magnetron according to claim 1, is characterized in that, described center magnet group comprises the multiple small magnets that are arranged on fan, and N, the S level of adjacent small magnet are staggered; Or, be positioned on the small magnet of fan-shaped home position near the pole polarity of target one side be arranged in the small magnet of fan-shaped other position on the polarity of close target one side contrary; Described center magnet group rotatablely moves as circumference taking target center as rotating shaft under the driving of central drive mechanism.
7. magnetron according to claim 1, it is characterized in that, described center magnet group comprises two middle center magnet groups, described two middle center magnet groups comprise respectively an inner magnet and the multiple outer magnets around described inner magnet, and described outer magnet is contrary with the polarity of the magnetic pole of close target one side on described inner magnet; Described two middle center magnet groups rotatablely move as circumference taking target center as rotating shaft.
8. magnetron according to claim 1, is characterized in that, described center magnet group and edge magnets group are carried out synchronous circumference and rotatablely moved under the driving of described driving mechanism taking described target center as rotating shaft.
9. magnetron according to claim 1, is characterized in that, the self-movement and uncorrelated mutually in magnetic control subregion separately under the driving of described central drive mechanism and described edge driving mechanism respectively of described center magnet group and edge magnets group.
10. a thin film deposition process equipment, comprise processing chamber and be arranged on the target of processing chamber top, it is characterized in that, above described target, be provided with the magnetron described in any one in claim 1-9, in order to form equally distributed magnetic field at described target material surface.
11. thin film deposition process equipment according to claim 10, is characterized in that, described thin film deposition process equipment is Pvd equipment.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010224956.1A CN102315064B (en) | 2010-07-02 | 2010-07-02 | Magnetron and thin film deposition treatment equipment applying same |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010224956.1A CN102315064B (en) | 2010-07-02 | 2010-07-02 | Magnetron and thin film deposition treatment equipment applying same |
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| CN102315064B true CN102315064B (en) | 2014-07-30 |
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| CN113699495B (en) * | 2021-06-21 | 2023-12-22 | 北京北方华创微电子装备有限公司 | Magnetron sputtering assembly, magnetron sputtering equipment and magnetron sputtering method |
| CN113249701B (en) * | 2021-06-25 | 2021-10-01 | 上海陛通半导体能源科技股份有限公司 | Ionization PVD equipment capable of improving filling uniformity |
Citations (4)
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|---|---|---|---|---|
| US5126029A (en) * | 1990-12-27 | 1992-06-30 | Intel Corporation | Apparatus and method for achieving via step coverage symmetry |
| US5795451A (en) * | 1997-06-12 | 1998-08-18 | Read-Rite Corporation | Sputtering apparatus with a rotating magnet array |
| US6497802B2 (en) * | 1999-02-12 | 2002-12-24 | Applied Materials, Inc. | Self ionized plasma sputtering |
| CN1516888A (en) * | 2001-06-12 | 2004-07-28 | ���ɿ�������˾ | Magnetron atomisation source |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5126029A (en) * | 1990-12-27 | 1992-06-30 | Intel Corporation | Apparatus and method for achieving via step coverage symmetry |
| US5795451A (en) * | 1997-06-12 | 1998-08-18 | Read-Rite Corporation | Sputtering apparatus with a rotating magnet array |
| US6497802B2 (en) * | 1999-02-12 | 2002-12-24 | Applied Materials, Inc. | Self ionized plasma sputtering |
| CN1516888A (en) * | 2001-06-12 | 2004-07-28 | ���ɿ�������˾ | Magnetron atomisation source |
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| CN102315064A (en) | 2012-01-11 |
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