CN102336394A - Method for manufacturing flexible micro electro mechanical system (MEMS) resistance reducing covering - Google Patents
Method for manufacturing flexible micro electro mechanical system (MEMS) resistance reducing covering Download PDFInfo
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- CN102336394A CN102336394A CN2011103289109A CN201110328910A CN102336394A CN 102336394 A CN102336394 A CN 102336394A CN 2011103289109 A CN2011103289109 A CN 2011103289109A CN 201110328910 A CN201110328910 A CN 201110328910A CN 102336394 A CN102336394 A CN 102336394A
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Abstract
The invention discloses a method for manufacturing a flexible micro electro mechanical system (MEMS) resistance reducing covering, and mainly aims to provide an improved manufacturing process. The method for manufacturing the resistance reducing covering comprises the following steps of: 1, preparing a middle interlayer on a substrate; 2, preparing a flexible underlayer on the substrate subjected to the step 1; 3, forming a metal layer on the substrate subjected to the step 2, and forming an electrolytic anode, an electrolytic cathode, an anode lead terminal, a cathode lead terminal and an internal connection by adopting an MEMS plane micro process; 4, preparing a flexible surface layer on the substrate subjected to the step 3, and forming a micro-pit array and a welding position connected with an external electric power conductor through photoetching or etching; and 5, peeling the structure formed on the middle interlayer from the substrate. A positive sequence method is adopted, namely the flexible underlayer is prepared first and then the flexible surface layer is prepared, procedures are reduced and the manufacturing process is simplified.
Description
Technical field
The present invention relates to little manufacturing and flexible MEMS technical field, relate in particular to the manufacturing approach of a kind of flexible MEMS (Micro Electro-Mechanical Systems) resistance reducing covering.
Background technology
Suffered running resistance comprised pressure drag, row wave resistance and skin friction resistance etc. when the water surface and underwater sailing body went, and wherein surperficial frictional resistance occupies maximum specific weight usually, and is especially true for the sail body that length and length-width ratio/draw ratio are bigger.Therefore, reduce sail body skin friction resistance can the raising effectively speed of a ship or plane, increase voyage, cut down the consumption of energy, have huge economic.
The theory and the application study of frictional resistance drag reduction technology at present mainly concentrates on turbulent boundary layer; Relate to the multiple technologies scheme; For example surface topography drag reduction (like the rib drag reduction), bionic, drag-reducing passive drag reduction modes such as (like the compliant wall drag reductions), and the polymeric additive drag reduction, inject bubble drag-reduction etc. and need injected material or catabiotic drag reduction mode.Forming one deck air film on the sail body surface is one of the highest drag reduction mode of theoretical now drag reducing efficiency, has received in recent years widely and having paid close attention to.Main thought is: with air film the most of outer surface of sail body is wrapped up, thereby the change liquid-solid interface is liquid-gas-solid interface, reduces frictional resistance greatly.At present mainly with supercavitation with spray into the gas dual mode and form air film.For jet mode, need extra gas injection system, and the essential continuous firing of this system, this dynamical system to sail body is bigger burden.For the supercavitation mode, have cavitation noise, and need to adopt special engine, and power consumption is very big.
Chinese invention patent " flexible MEMS resistance reducing covering and manufacturing approach thereof " (patent No. ZL200910079713.0, January 26 2011 Granted publication day) discloses a kind of resistance reducing covering and manufacturing approach thereof of utilizing resident microbubble to realize drag reduction.Its manufacturing approach weak point is: adopted the backward method to prepare resistance reducing covering, promptly prepared flexible material film top layer earlier, prepared the flexible material film-substrate then.Thereby brought following two problems: 1., need to exist in the middle of operation adopt the body silicon etching process that the hard substrate silicon chip is removed fully, increased the difficulty and the cost of technology; 2., need exist independent operation to be processed to form the welding position that connects the externally fed lead.
Summary of the invention
To the problems referred to above, the present invention provides a kind of manufacturing approach of improved flexible MEMS resistance reducing covering, and it adopts the positive sequence method and has simplified manufacturing process.
For achieving the above object, the manufacturing approach of flexible MEMS resistance reducing covering according to the invention comprises the steps:
Further, the polymer of said intermediate course is PDMS (dimethyl silicone polymer), and the quality proportioning of curing agent and PDMS monomer is 0.05~0.2: 1 in the prepolymer before this polymer cure.
Further, the polymer of said flexible substrate is a polyimides.
Further, the metal material of said metal pattern is a platinum.
Further, described MEMS planar micro fine workmanship skill comprises: whirl coating, photoetching, sputter and ultrasonic peeling off.
Further, the polymer of said flexible skin is SU-8 photoresist or polyimides.
Further, wherein, the concrete performing step of step 5 is following:
The structure mechanical stripping from the said substrate that uses thin blade and tip tweezers will be formed on above the said intermediate course gets off.
Further, wherein, the concrete performing step of step 5 is following:
The said substrate of completing steps 4 is immersed in the organic chemistry solvent,, the structure that is formed on said intermediate course top is come off from said substrate to dissolve said intermediate course or to change the character of said intermediate course.
The invention has the beneficial effects as follows:
1. the present invention adopts the positive sequence method, and the preparation flexible substrate prepares flexible skin then earlier, has reduced operation, has simplified manufacture craft.
2. select for use PDMS (dimethyl silicone polymer) as intermediate course.The PDMS film has the flexible and less surface ability of height, and thin blade easy to use and tip tweezers carry out mechanical separation to the stressed-skin construction and the substrate that are formed on said intermediate course top.Simultaneously, PDMS like acetone, oxolane or the like, has imbitition to organic solvent, a little less than the PDMS surface viscosity after the imbibition becomes extremely, and can deform, and produces internal stress, is convenient to realize coming off naturally of stressed-skin construction.
3. select for use the SU-8 photoresist as skin-material.SU-8 photoresist lithography performance is good, can realize small size, the bowl configurations of big depth-to-width ratio, high steepness.Simultaneously, SU-8 photoresist physical and chemical performance is stable, and the resistance reducing covering of preparation can satisfy the instructions for use under the varying environment.
Description of drawings
Fig. 1 is the flow chart of a specific embodiment of the manufacturing approach of flexible MEMS resistance reducing covering according to the invention;
Fig. 2 is the structural representation of hard substrate of the present invention;
Fig. 3 is the present invention prepares one deck intermediate course on said hard substrate a structural representation;
Fig. 4 is the present invention prepares one deck flexible substrate on said intermediate course a structural representation;
Fig. 5 is that the present invention forms the structural representation that one deck contains the metal pattern of electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector on said flexible substrate;
Fig. 6 is the present invention prepares one deck flexible skin on said metal pattern layer a structural representation;
Fig. 7 is that the present invention is through carrying out photoetching or etching to said flexible skin, the structural representation of formation nick hole array and lead terminal welding position;
Fig. 8 is the structural representation of the resistance reducing covering after the present invention separates from hard substrate.
Reference numeral:
The 1-substrate; The 2-intermediate course; The 3-flexible substrate; The 4-electrolytic anode; The 5-electrolysis cathode;
The 6-anode lead terminal; The 7-cathode lead terminal; The 8-flexible skin; 9-nick hole.
The specific embodiment
Below in conjunction with Figure of description the present invention is done further description.
As shown in Figure 1, the manufacturing approach of flexible MEMS resistance reducing covering of the present invention comprises the steps:
Embodiment 1:
Manufacturing approach comprises the steps:
1.1, prepare hard substrate: select common single carrier of throwing silicon chip as whole flexible resistance reducing covering processing for use.
1.2, the preparation intermediate course: is 5: 1~20: 1 mixed with PDMS monomer and curing agent with the mass ratio of monomer, stirs and vacuumizes and handle 15min with the bubble in the removal mixed liquor.Use sol evenning machine that the mixed solution that stirs is spin-coated on the hard substrate, place baking oven then, heat 60min down at 90 ℃ PDMS is solidified.In this step, the rotating speed through regulating sol evenning machine and select different even glue-curing number of times can obtain the PDMS film of different-thickness.The thickness of PDMS film is 20 μ m in the present embodiment.
1.3, the preparation flexible substrate: spin-on polyimide performed polymer coating adhesive on intermediate course, and heating cure.In this step, the rotating speed through regulating sol evenning machine and select different even glue-curing number of times can obtain the Kapton of different-thickness.The thickness of Kapton is 20 μ m in the present embodiment.
1.4, the preparation metal pattern layer: on said flexible substrate, form the layer of metal layer; And on said metal level, adopt the MEMS planar micro fine workmanship preparation metal pattern of planting, form electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector.Promptly adopt whirl coating-photoetching-sputter-ultrasonic technology of peeling off to go up preparation platinum figure at polyimide layer (being flexible substrate), platinum layer thickness is
1.5, the preparation flexible skin: spin coating SU-8 photoresist on said flexible substrate and said metal pattern places then and carries out preceding baking in the baking oven.In this step, the rotating speed through regulating sol evenning machine and select different even glue-curing number of times can obtain the SU-8 photoresist film of different-thickness.The thickness of SU-8 photoresist film is 50 μ m in the present embodiment.
1.6, photoetching: the SU-8 photoresist for preparing in the above-mentioned steps is made public, develops and back baking, form nick hole and lead terminal welding position.
1.7, separate stressed-skin construction: said hard substrate and the intermediate course that has prepared, flexible substrate, metal film layer and flexible skin are immersed in the beaker that fills tetrahydrofuran solution as a whole; And beaker placed the ultrasonic cleaning machine; Auxiliary with ultrasonic vibration, realize coming off naturally of stressed-skin construction.
Embodiment 2:
Manufacturing approach comprises the steps:
2.1, prepare hard substrate: select for use sheet metal after polishing as the carrier of whole flexible resistance reducing covering processing.
2.2, the preparation intermediate course: is 5: 1~20: 1 mixed with PDMS monomer and curing agent with mass ratio, stirs and vacuumizes and handle 15min with the bubble in the removal mixed liquor.Use sol evenning machine that the mixed solution that stirs is spin-coated on the hard substrate, place baking oven then, heat 60min down at 90 ℃ PDMS is solidified.In this step, the rotating speed through regulating sol evenning machine and select different even glue-curing number of times can obtain the PDMS film of different-thickness.The thickness of PDMS film is 200 μ m in the present embodiment.
2.3, the preparation flexible substrate: spin-on polyimide performed polymer coating adhesive on intermediate course, and heating cure.In this step, the rotating speed through regulating sol evenning machine and select different even glue-curing number of times can obtain the Kapton of different-thickness.The thickness of Kapton is 50 μ m in the present embodiment.
2.4, the preparation metal pattern layer: on said flexible substrate, form the layer of metal layer; And on said metal level, adopt the MEMS planar micro fine workmanship preparation metal pattern of planting, form electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector.Promptly adopt whirl coating-photoetching-sputter-ultrasonic technology of peeling off to go up preparation platinum figure at polyimide layer (being flexible substrate), platinum layer thickness is
2.5, the preparation flexible skin: spin-on polyimide performed polymer coating adhesive on said flexible substrate and said metal pattern, and heating cure.In this step, the rotating speed through regulating sol evenning machine and select different even glue-curing number of times can obtain the Kapton of different-thickness.The thickness of Kapton is 50 μ m in the present embodiment.
2.6, etching: the Kapton to preparing in the above-mentioned steps carries out etching, forms nick hole and lead terminal welding position, and etching depth is as the criterion to expose metal pattern.
2.7, separate stressed-skin construction: use thin blade and tweezers that stressed-skin construction is separated from middle interlayer and hard substrate.
Above embodiment all adopts method of the present invention, and wherein listed concrete process, parameter and size only is for example, but not to the restriction of the inventive method scope of application.Any technical staff who is familiar with the present technique field is in the technical scope that the present invention discloses, and the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain that claim was defined.
Claims (8)
1. the manufacturing approach of a flexible MEMS resistance reducing covering is characterized in that, comprises the steps:
Step 1, in substrate preparation one deck intermediate course;
Step 2, in the said substrate of completing steps 1 preparation one deck flexible substrate;
Step 3, in the said substrate of completing steps 2, form the layer of metal layer, and adopt MEMS planar micro fine workmanship skill on said metal level, to form electrolytic anode, electrolysis cathode, anode lead terminal, cathode lead terminal and interconnector;
Step 4, in the said substrate of completing steps 3 preparation one deck flexible skin, and form the welding position of nick hole array and connection externally fed lead through photoetching or etching;
Step 5, the structure that will be formed on said intermediate course top strip down from said substrate.
2. the manufacturing approach of flexible MEMS resistance reducing covering according to claim 1 is characterized in that, the polymer of said intermediate course is PDMS, and the quality proportioning of curing agent and PDMS monomer is 0.05~0.2: 1 in the prepolymer before this polymer cure.
3. the manufacturing approach of flexible MEMS resistance reducing covering according to claim 1 is characterized in that, the polymer of said flexible substrate is a polyimides.
4. the manufacturing approach of flexible MEMS resistance reducing covering according to claim 1 is characterized in that, the metal material of said metal level is a platinum.
5. the manufacturing approach of flexible MEMS resistance reducing covering according to claim 1 is characterized in that, described MEMS planar micro fine workmanship skill comprises: whirl coating, photoetching, sputter and ultrasonic peeling off.
6. the manufacturing approach of flexible MEMS resistance reducing covering according to claim 1 is characterized in that, the polymer of said flexible skin is SU-8 photoresist or polyimides.
7. the manufacturing approach of flexible MEMS resistance reducing covering according to claim 1 is characterized in that, wherein, the concrete performing step of step 5 is following:
The structure mechanical stripping from the said substrate that uses thin blade and tip tweezers will be formed on above the said intermediate course gets off.
8. the manufacturing approach of flexible MEMS resistance reducing covering according to claim 1 is characterized in that, wherein, the concrete performing step of step 5 is following:
The said substrate of completing steps 4 is immersed in the organic chemistry solvent,, the structure that is formed on said intermediate course top is come off from said substrate to dissolve said intermediate course or to change the character of said intermediate course.
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN103754819A (en) * | 2014-01-21 | 2014-04-30 | 清华大学 | Preparation method of flexible anti-drag skin of micro-electromechanical system (MEMS) |
CN107840304A (en) * | 2017-10-31 | 2018-03-27 | 北京信息科技大学 | Prepare method, the flexible electrochemical device of flexible electrochemical device |
WO2020010788A1 (en) * | 2018-07-13 | 2020-01-16 | 浙江清华柔性电子技术研究院 | Microfluidic device and preparation method therefor, and microfluidic system |
Families Citing this family (1)
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CN109823508B (en) * | 2019-02-22 | 2021-07-06 | 西安电子科技大学 | High-speed aircraft flexible skin with over-limit thermal protection and survival state perception |
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CN1889251A (en) * | 2005-07-21 | 2007-01-03 | 惠普开发有限公司 | Production of multi-thin film device |
CN101138663A (en) * | 2007-10-25 | 2008-03-12 | 上海交通大学 | Preparation method of biological microelectrode array based on flexible substrate |
CN101486438A (en) * | 2009-03-06 | 2009-07-22 | 清华大学 | Flexible MEMS resistance reducing covering and method of manufacturing the same |
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Patent Citations (5)
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US5461003A (en) * | 1994-05-27 | 1995-10-24 | Texas Instruments Incorporated | Multilevel interconnect structure with air gaps formed between metal leads |
JPH08142333A (en) * | 1994-11-15 | 1996-06-04 | Ricoh Co Ltd | Matrix of nozzle plate and production of nozzle plate |
CN1889251A (en) * | 2005-07-21 | 2007-01-03 | 惠普开发有限公司 | Production of multi-thin film device |
CN101138663A (en) * | 2007-10-25 | 2008-03-12 | 上海交通大学 | Preparation method of biological microelectrode array based on flexible substrate |
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CN103754819A (en) * | 2014-01-21 | 2014-04-30 | 清华大学 | Preparation method of flexible anti-drag skin of micro-electromechanical system (MEMS) |
CN103754819B (en) * | 2014-01-21 | 2015-10-21 | 清华大学 | The preparation method of flexible MEMS resistance reducing covering |
CN107840304A (en) * | 2017-10-31 | 2018-03-27 | 北京信息科技大学 | Prepare method, the flexible electrochemical device of flexible electrochemical device |
WO2020010788A1 (en) * | 2018-07-13 | 2020-01-16 | 浙江清华柔性电子技术研究院 | Microfluidic device and preparation method therefor, and microfluidic system |
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