CN102376604A - Vacuum processing equipment and temperature control method thereof, and semiconductor device processing method - Google Patents
Vacuum processing equipment and temperature control method thereof, and semiconductor device processing method Download PDFInfo
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- CN102376604A CN102376604A CN2010102580200A CN201010258020A CN102376604A CN 102376604 A CN102376604 A CN 102376604A CN 2010102580200 A CN2010102580200 A CN 2010102580200A CN 201010258020 A CN201010258020 A CN 201010258020A CN 102376604 A CN102376604 A CN 102376604A
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Abstract
The invention provides vacuum processing equipment and a temperature control method thereof. The vacuum processing equipment comprises a cavity, a lining positioned inside the cavity, and a heater which is arranged inside the cavity and connected with the lining in a contact manner, wherein a gap is reserved between the lining and the cavity; preferably, the heater is positioned under the lining; and the upper surface of the heater is well contacted with the lower surface of the lining. In the vacuum processing equipment, the heater is arranged inside the cavity and connected with the lining in the contact manner, and the gap is reserved between the lining and the cavity, so the cavity and the lining can be subjected to temperature setting and control respectively by independently controlling temperature of the lining through the heater; for example, the temperature of the lining is set to be higher than an evaporating point of most byproducts generated by etching reaction, so attachment of the byproducts to the wall of the lining can be reduced and the fallen byproducts are pumped away by a vacuum pump; therefore, the pollution situation in the cavity can be improved, the maintenance frequency can be reduced and the yield of the equipment can be increased.
Description
Technical field
The present invention relates to the semiconductor processing technology field, particularly a kind of vacuum processing apparatus and temperature-controlled process thereof, semiconductor device fabrication method.
Background technology
LED etching machine is a very important equipment in the led light source production process, and usually, GaN base epitaxial loayer or Sapphire Substrate are the main objects of etching.The effect of etching technics is directly connected to the quality of led chip, and then influences the quality of light source.
LED etching machine comprises transport module and technical module, and the two affects the efficient (being equipment capacity) of etching jointly, and the effect of etching mainly determines that by technical module wherein, the chamber design of technical module has the greatest impact to etching effect.For example, in the etching process, can produce a lot of accessory substances in the chamber, how remove or the accessory substance that reduces in the chamber is exactly one of urgent problem to the influence of etching effect.
Shown in Figure 1 is the common chamber structure sketch map of LED etching machine, as shown in the figure, enclosure space 9 of radio-frequency drive coil 1, electrical insulating material forms 2, chamber 3 and electrostatic chuck (perhaps mechanical chuck) 7 common formation; Enclosure space 9 is divided into the process cavity of left-half and the pumping chamber of right half part, and the exhaust outlet 6 that is positioned at pumping chamber bottom is communicated with the vacuum plant (not shown), operates in enclosure space 9 formation vacuum environments through vacuum plant.
Process gas is by central air induction mouth 4 (or peripheral inlet port 5; The perhaps combination of central air induction mouth 4 and peripheral inlet port 5) gets into this enclosure space 9; The radio-frequency drive coil 1 of electrical insulating material forms 2 tops passes to RF energy, passes through the coupling of electrical insulating material forms 2, in enclosure space 9, process gas is excited into plasma; Thereby the wafer on the electrostatic chuck 78 is carried out etching, and the accessory substance of etching reaction is taken away through exhaust outlet 6.In order to protect processing chamber to avoid particle contamination and to consider cost factor, place liner 10 in the enclosure space 9 usually.Accessory substance discharge path in the process cavity is shown in the figure arrow, and these accessory substances must pass through the junction of process cavity and pumping chamber, and therefore corresponding aspirating hole 11 also is set on liner 10.
Yet problem is that in the etching process, chamber 3 carries out temperature control by the heater (not shown), for example is set between 50～60 degrees centigrade.The composition of the accessory substance that etching process produces is very complicated; And most of accessory substance evaporating points are all more than 100 degrees centigrade; Cause so most of accessory substances all with the form of particle attached to the piece surface in the chamber 9, wherein, the most serious contaminated part is exactly a liner 10.When byproducts build-up arrives to a certain degree, will produce serious harmful effect to the result of etching technics, such as particle contamination, process drift etc.Therefore, need regularly the part in the chamber to be carried out clean and maintenance, but frequency of maintenance is high more, the equipment actual process is few more service time, not only increases the reduction that production cost also causes production capacity.
Summary of the invention
The problem that the present invention solves provides a kind of vacuum processing apparatus, can improve the pollution situation in the chamber, reduces frequency of maintenance, thereby improves equipment capacity.
For addressing the above problem, the present invention provides a kind of vacuum processing apparatus, comprising:
Chamber;
Liner is positioned at said chamber interior;
Heater is arranged on said chamber interior, is connected with said liner contact;
Wherein, has the gap between said liner and the chamber.
Said heater be positioned at liner below, the upper surface of heater well contacts with the lower surface of liner.
Said heater does not contact with chamber, is connected with chamber through strutting piece.
Said strutting piece is distributed between heater lower surface and the cavity bottom surface.
The bottom of said chamber sidewall has cannelure.
Preferably, the volume in space that said cannelure forms be less than or equal to space that said chamber forms volume 10%.
The width in said gap is reduced to the top by cavity bottom.
Said cavity bottom is provided with perforate, and the leading-out terminal of said heater extends to from perforate outside the chamber, and said perforate is provided with seal member, with the indoor sealed environment of holding chamber.
Preferably, adopt delta seal between the leading-out terminal of said heater and the chamber.
Accordingly, the present invention also provides a kind of temperature-controlled process of vacuum processing apparatus, comprising:
Setting lining temperature is first temperature, and setting chamber temp is second temperature;
By heater liner is heated to first temperature, chamber is heated to second temperature by temperature control equipment;
Wherein, said first temperature is higher than the evaporating point of byproduct of reaction, and said second temperature is lower than the evaporating point of byproduct of reaction.
Preferably, said vacuum processing apparatus is a semiconductor processing equipment.
Said semiconductor processing equipment is a plasma processing device.
Accordingly, a kind of semiconductor device fabrication method is provided also, it is characterized in that: liner is heated to first temperature; Chamber is heated to second temperature; In chamber, feed gas, the gas that feeds and wafer generation physics to be processed or chemical reaction, the accessory substance that reaction back is produced detaches chamber through vacuum system.
Wherein, said first temperature is higher than said second temperature.
Technique scheme has the following advantages:
The vacuum processing apparatus that the embodiment of the invention provides is provided with heater in chamber interior, and this heater is connected with the liner contact; And leave the gap between liner and the chamber, control the temperature of liner separately through heater, so; Chamber and liner carry out temperature respectively to be set and controls, can the lining temperature set point is higher, be higher than the evaporating point of the most of accessory substances of etching reaction; Can effectively reduce adhering to of accessory substance, accessory substance is taken away by vacuum pump, thereby can improve the pollution situation in the chamber; Reduce frequency of maintenance, thereby improve equipment capacity.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by actual size equal proportion convergent-divergent.
Fig. 1 is a kind of structural representation of common LED etching unit room;
Fig. 2 is the structural representation of LED etching machine among the embodiment one;
Fig. 3 is the structural representation of LED etching machine among the embodiment two;
Fig. 4 is the flow chart of the temperature-controlled process of vacuum processing apparatus among the embodiment three.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
Set forth a lot of details in the following description so that make much of the present invention, implement but the present invention can also adopt other to be different from alternate manner described here, so the present invention has not received the restriction of following disclosed specific embodiment.
Secondly, the present invention combines sketch map to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The profile of indication device structure can be disobeyed general ratio and done local the amplification, and said sketch map is example, and it should not limit the scope of the present invention's protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Be outstanding characteristics of the present invention, do not provide in the accompanying drawing and the inevitable directly related part of inventive point of the present invention, for example, radio-frequency power supply etc.
Said as the background technology part, in the chamber of LED etching machine technical module, in technical process, can accumulation form a large amount of contamination particles at present; Need the frequent clean and maintenance of carrying out, be unfavorable for improving the production capacity of equipment, the inventor discovers; The reason that contamination particle produces is that in the etching technics, chamber temp (is positioned at outside the chamber by temperature control equipment; Not shown) control; And liner does not carry out temperature control separately, and its temperature receives the influence of chamber temp, and general chamber temp is set the evaporating point that is lower than most of etching reaction accessory substances; So all the form with particle is the most serious attached to the pollution of the piece surface in the chamber, particularly inner lining surface to cause most of accessory substances.
Based on this; The present invention provides a kind of vacuum processing apparatus and temperature-controlled process thereof, and through chamber and liner are carried out temperature setting and control respectively, the lining temperature set point is higher; Effectively reduce accessory substance attached to inner lining surface; Accessory substance is taken away by vacuum pump, thereby reduced the frequency of maintenance of equipment, improve utilization rate of equipment and installations and production capacity.
Be example with LED etching machine below, specify the embodiment of vacuum processing apparatus according to the invention.
Embodiment one
Fig. 2 is the structural representation of LED etching machine in the present embodiment, and is as shown in the figure, and this LED etching machine comprises: chamber 21, liner 22, heater 23, forms 24 and radio-frequency coil 25 etc.
Wherein, chamber 21 and the forms 24 common enclosure spaces 29 that form, this enclosure space 29 comprises process cavity 29a and pumping chamber 29b two parts, pumping chamber 29b is arranged on the side of process cavity 29a bottom; The process cavity 29a of chamber 21 for example is the cylinder bodily form, and its sidewall bottom is provided with exhaust passage 28, and process cavity 29a and pumping chamber 29b are connected, and the bottom of pumping chamber 29b is provided with bleeding point 30, and this bleeding point 30 is connected with the external vacuum (not shown).
The bottom of chamber 21 is provided with chuck 27, is used for bearing wafer 8.Chuck 27 for example is circular, can be connected with external power source, and its inside also can be provided with resistance wire, is used for wafer 8 heating.
Said liner 22 also is positioned at chamber 21 inside, and the shape of the basic process cavity 29b with chamber of its shape is identical, and in the present embodiment, owing to the process cavity 29a of chamber 21 is the cylinder bodily form, then liner 22 also is the cylinder bodily form basically.Liner 22 is equipped with corresponding opening or passage corresponding to the position of central air induction mouth 31 or peripheral inlet port 32 and exhaust passage 28, to guarantee that air-flow is unimpeded.
In the etching process; Process gas gets into this enclosure space 9 by central air induction mouth 31 and/or peripheral inlet port 32; The radio-frequency coil 1 of forms 24 tops is introduced radio-frequency power; Coupling through forms 24 is excited into plasma with process gas in enclosure space 9, then the wafer on the electrostatic chuck 27 8 is carried out etching.The accessory substance of etching reaction is taken away through the path of exhaust passage 28, pumping chamber 29b, exhaust outlet 6.
In addition, has gap 33 between said liner 22 sidewalls and chamber 21 sidewalls, to prevent the heat conduction between liner 22 and the chamber 21.And liner 22 bottoms do not contact with chamber 21, and are arranged on the heater 23.In the present embodiment, heater 23 is an annular, be positioned at chuck 27 around, be arranged on liner 22 below, the upper surface of said heater 23 well contacts with the lower surface of liner 22, that guarantees that its heat that sends can be good passes to liner 22.
Preferably, for further improving heats, can connect through screw between said heater 23 and the liner 22, to strengthen both exposure levels.
Though said heater 23 is arranged on chamber 21 bottoms, it does not contact with chamber 21, but is connected with the bottom of chamber 21 through at least two strutting pieces 26.Said strutting piece 26 is distributed between heater 23 lower surface 23a and the chamber 21 lower surface 21a (being in the chamber 21 and the forms facing surfaces); For example; Can along the circumferential direction be uniformly distributed with and 6 metallic support posts are set between chamber 21 bottoms and heater 23, purpose is to reduce the heat transfer area between chamber 21 and the heater 23, wherein; Strutting piece 26 is not only played a supporting role, and plays the effect that heater 23 and chamber 21 are electrically connected simultaneously.
Said chamber 21 is preferably metal material, for example high-performance stainless steel.Said forms 24 are preferably electrical insulating material, for example quartz glass.Said liner is preferably sheet metal, and for example, selecting thickness for use is the aluminum profile extrusion moulding of 1.5～5mm, and adopts special anticorrosion process for treating surface, such as sulfuric acid hard anodizing etc.Said heater is a resistance wire formula heater.Said strutting piece 26 also is a metal material.
The bottom surface of said chamber 21 is provided with perforate 34, and the leading-out terminal of said heater 23 extends to outside the chamber 21 from perforate 34, and is connected with the external power source (not shown), and the sealing ring 35 in the perforate 34 plays the effect that seals between chamber 21 and the leading-out terminal.Preferably, adopt the mode of delta seal between the leading-out terminal of heater 23 and the chamber 21, and heater 23 leading-out terminals are long, the position temperature of being convenient to sealing ring 35 contacts is guaranteed sealing effectiveness in the working range of sealing ring.
LED etching machine in the present embodiment at chamber 21 set inside heaters 23, and is connected 22 contacts of this heater 23 and liner; And leave gap 33 between liner 22 and the chamber 21, through the temperature of heater 23 independent control liners 22, so; Chamber 21 carries out temperature respectively with liner 22 to be set and controls, can liner 22 desired temperatures are higher, be higher than the evaporating point of the most of accessory substances of etching reaction; Can effectively reduce adhering to of accessory substance, accessory substance is taken away by vacuum pump, thereby can improve the pollution situation in the chamber; Reduce frequency of maintenance, thereby improve equipment capacity.
For example, the temperature stabilization of chamber 21 is in 50 deg.c, and the temperature of liner 22 will be higher than the evaporating point of most of accessory substances; Generally will reach about 150 degree, in the present embodiment, the process cavity 29a of chamber 21 is the cylinder bodily form; Liner 22 also is the corresponding cylinder bodily form; In order to make chamber 21 and liner 22 reach thermally-stabilised separately, the external diameter of liner 22 is littler than chamber 21 internal diameters, and the width in said gap 33 is about 1～10mm.
Among the above embodiment, heater is arranged on the bottom of liner, in fact; Because the restriction of heat conduction distance; The temperature of lower of liner will be higher than upper temp, and this will influence enclosure space 29 temperature inside uniformities, based on this; In the another embodiment of the present invention, adopt uneven gap width to make chamber temp reach stable.Specify below in conjunction with accompanying drawing.
Embodiment two
Fig. 3 is the structural representation of LED etching machine in the present embodiment, and is as shown in the figure, and the structure and the embodiment one of this LED etching machine are similar, also comprise: chamber 21 ', liner 22 ', heater 23 ', forms 24 ' and radio-frequency coil 25 ' etc.
The difference part is that the bottom of said chamber 21 ' sidewall (being the part of sidewall near cavity bottom) has cannelure 36, and this cannelure is around columniform process cavity 29a ', and its height is identical with the pumping chamber 29b ' of process cavity one side.Because the existence of cannelure 36; Make that the width in gap 33 ' is also inhomogeneous from top to bottom; For chamber 21 ' top; Have more the space of a cannelure between liner 22 ' and the chamber 21 ', thereby reduce of the influence of the high temperature of heater 23 ' and liner 22 ' bottom chamber 21 ' bulk temperature.
Preferably, the volume in space that said cannelure forms be less than or equal to space that chamber forms volume 10%, if surpass 10% then can increase the volume of bleeding, influence the vacuum ability of equipment.In technical process, liner 22 ' is heated to 150 deg.c, can effectively reduce adhering to of accessory substance, produces in many technology at accessory substances such as LED etching technics or metal etchs, and is very meaningful for the cleaning frequency that reduces equipment.
In fact, for realizing the stability and the uniformity of chamber interior temperature, can also adopt other structures; For example; Can liner be designed to stepped ramp type, the liner upper part diameter is greater than the diameter of liner bottom, too can so that the gap at the width of chamber bottom greater than width on chamber top.
Again for example; The width in gap can be reduced to the top by cavity bottom, liner or chamber sidewall is processed into favours the chamber bottom surface, can realize that the width linearity in said gap reduces; The multi-stage annular groove that perhaps supreme processing radius reduces gradually under chamber sidewall has; Can realize reducing step by step of said gap width, repeat no more, equal like this more even of chamber temp distribution that can make at this.
The present invention also provides a kind of temperature-controlled process of vacuum processing apparatus, specifies in following examples.
Embodiment three
Fig. 4 is the flow chart of the temperature-controlled process of vacuum processing apparatus in the present embodiment, and wherein, said vacuum processing apparatus is to be the arbitrary LED etching machine among the above embodiment.
Step S1: setting lining temperature is first temperature, and setting chamber temp is second temperature;
Step S2: by heater liner is heated to first temperature, chamber is heated to second temperature by temperature control equipment;
Wherein, said second temperature is higher than the evaporating point of byproduct of reaction, and said first temperature is lower than the evaporating point of byproduct of reaction.
For example; Produce in many technology at accessory substances such as LED etching technics or metal etchs; Said first temperature is about 150 degrees centigrade, and said second temperature is about 50 degrees centigrade, and the accessory substance that can effectively avoid etching reaction is attached to inner lining surface; Can reduce the frequency of equipment cleaning, enhance productivity.
Embodiment four
Present embodiment provides a kind of semiconductor device fabrication method, can be used for the for example manufacture craft of large scale integrated circuit, and this method specifically may further comprise the steps:
Any process equipment among embodiment one or the embodiment two is provided, wafer to be processed is arranged on the pedestal in the chamber, such as the device of supporting wafers such as electrostatic chuck or mechanical chuck;
Liner in the process equipment chamber is heated to first temperature; Chamber is heated to second temperature;
In chamber, feed gas, the gas that feeds and wafer generation physics to be processed or chemical reaction (for example reaction such as chemical vapour deposition (CVD), plasma etching), the accessory substance that reaction back is produced detaches chamber through vacuum system.
Wherein, the temperature of liner and chamber is controlled respectively, and promptly first temperature can be different with second temperature, and preferred, said first temperature is higher than said second temperature.
The foregoing description is an example with LED etching machine only, and in fact, vacuum processing apparatus described in other embodiment of the present invention also can be other semiconductor processing equipments, for example film deposition equipment such as chemical vapour deposition (CVD).
Preferably; Said semiconductor processing equipment is a plasma processing device; For example parallel plate capacitor coupled plasma (Capacitively Coupled Plasma, be called for short CCP) equipment, Ecr plasma (ECR) equipment and inductively coupled plasma (ICP) equipment.In addition, the position of said heater is not limited in cavity bottom, also can be positioned at other positions of chamber, and heater also is not limited to resistance type heater, also can be infrared heater etc.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (14)
1. a vacuum processing apparatus is characterized in that, comprising:
Chamber;
Liner is positioned at said chamber interior;
Heater is arranged on said chamber interior, is connected with said liner contact;
Wherein, has the gap between said liner and the chamber.
2. vacuum processing apparatus according to claim 1 is characterized in that, said heater be positioned at liner below, the upper surface of heater well contacts with the lower surface of liner.
3. vacuum processing apparatus according to claim 1 is characterized in that said heater does not contact with chamber, is connected with chamber through strutting piece.
4. vacuum processing apparatus according to claim 3 is characterized in that, said strutting piece is distributed between heater lower surface and the cavity bottom surface.
5. vacuum processing apparatus according to claim 1 is characterized in that the bottom of said chamber sidewall has cannelure.
6. vacuum processing apparatus according to claim 5 is characterized in that, the volume in space that said cannelure forms be less than or equal to space that said chamber forms volume 10%.
7. vacuum processing apparatus according to claim 1 is characterized in that the width in said gap is reduced to the top by cavity bottom.
8. vacuum processing apparatus according to claim 1 is characterized in that said cavity bottom is provided with perforate, and the leading-out terminal of said heater extends to from perforate outside the chamber, and said perforate is provided with seal member, with the indoor sealed environment of holding chamber.
9. vacuum processing apparatus according to claim 8 is characterized in that, adopts delta seal between the leading-out terminal of said heater and the chamber.
10. the temperature-controlled process like each described vacuum processing apparatus of claim 1-9 is characterized in that,
Setting lining temperature is first temperature, and setting chamber temp is second temperature;
By heater liner is heated to first temperature, chamber is heated to second temperature by temperature control equipment;
Wherein, said first temperature is higher than the evaporating point of byproduct of reaction, and said second temperature is lower than the evaporating point of byproduct of reaction.
11., it is characterized in that said vacuum processing apparatus is a semiconductor processing equipment like each described vacuum processing apparatus of claim 1-9.
12. vacuum processing apparatus as claimed in claim 11 is characterized in that, said semiconductor processing equipment is a plasma processing device.
13. a semiconductor device fabrication method is characterized in that: liner is heated to first temperature; Chamber is heated to second temperature; In chamber, feed gas, the gas that feeds and wafer generation physics to be processed or chemical reaction, the accessory substance that reaction back is produced detaches chamber through vacuum system.
14. semiconductor device fabrication method as claimed in claim 13 is characterized in that: said first temperature is higher than said second temperature.
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| CN 201010258020 CN102376604B (en) | 2010-08-19 | 2010-08-19 | Vacuum processing equipment and temperature control method thereof, and semiconductor device processing method |
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| CN 201010258020 CN102376604B (en) | 2010-08-19 | 2010-08-19 | Vacuum processing equipment and temperature control method thereof, and semiconductor device processing method |
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Cited By (6)
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| CN103337444A (en) * | 2013-06-08 | 2013-10-02 | 天通吉成机器技术有限公司 | Reaction chamber of dry plasma etcher |
| CN105321794A (en) * | 2015-10-19 | 2016-02-10 | 上海华力微电子有限公司 | Damascus integrated etching machine cavity and substrate part |
| CN105632968A (en) * | 2014-10-30 | 2016-06-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber and semiconductor processing equipment |
| WO2018064983A1 (en) * | 2016-10-08 | 2018-04-12 | 北京北方华创微电子装备有限公司 | Gas phase etching apparatus and gas phase etching equipment |
| US11107699B2 (en) | 2016-10-08 | 2021-08-31 | Beijing Naura Microelectronics Equipment Co., Ltd. | Semiconductor manufacturing process |
| CN114807886A (en) * | 2022-04-13 | 2022-07-29 | 北京北方华创微电子装备有限公司 | Process chamber and process method |
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| CN103337444A (en) * | 2013-06-08 | 2013-10-02 | 天通吉成机器技术有限公司 | Reaction chamber of dry plasma etcher |
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| JP2019533902A (en) * | 2016-10-08 | 2019-11-21 | 北京北方華創微電子装備有限公司Beijing Naura Microelectronics Equipment Co., Ltd. | Vapor phase etching apparatus and vapor phase etching equipment |
| US11107699B2 (en) | 2016-10-08 | 2021-08-31 | Beijing Naura Microelectronics Equipment Co., Ltd. | Semiconductor manufacturing process |
| US11107706B2 (en) | 2016-10-08 | 2021-08-31 | Beijing Naura Microelectronics Equipment Co., Ltd. | Gas phase etching device and gas phase etching apparatus |
| CN114807886A (en) * | 2022-04-13 | 2022-07-29 | 北京北方华创微电子装备有限公司 | Process chamber and process method |
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Address after: 100176 8 Wenchang Avenue, Beijing economic and Technological Development Zone, Beijing Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100016 Jiuxianqiao East Road, Chaoyang District, Chaoyang District, Beijing Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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