CN102399494B - Chemical mechanical polishing solution - Google Patents

Chemical mechanical polishing solution Download PDF

Info

Publication number
CN102399494B
CN102399494B CN201010277685.6A CN201010277685A CN102399494B CN 102399494 B CN102399494 B CN 102399494B CN 201010277685 A CN201010277685 A CN 201010277685A CN 102399494 B CN102399494 B CN 102399494B
Authority
CN
China
Prior art keywords
application according
chemical mechanical
mechanical polishing
mass percentage
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201010277685.6A
Other languages
Chinese (zh)
Other versions
CN102399494A (en
Inventor
何华锋
王晨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anji Microelectronics Shanghai Co Ltd
Anji Microelectronics Co Ltd
Original Assignee
Anji Microelectronics Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics Shanghai Co Ltd filed Critical Anji Microelectronics Shanghai Co Ltd
Priority to CN201010277685.6A priority Critical patent/CN102399494B/en
Priority to PCT/CN2011/001450 priority patent/WO2012031452A1/en
Publication of CN102399494A publication Critical patent/CN102399494A/en
Application granted granted Critical
Publication of CN102399494B publication Critical patent/CN102399494B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Abstract

The invention relates to a chemical mechanical polishing solution. The chemical mechanical polishing solution simultaneously contains grinding granules, halogen-containing oxidant, organic amine, ethylene diamine tetraacetic acid (EDTA) and pH regulator; and the chemical mechanical polishing solution has alkali pH value. The polishing solution has very high polishing rate for silicon and copper under the alkali polishing environment. Amino acid can be continuously added into the polishing solution, so that the removal rate of the silicon and the copper is kept stable.

Description

A kind of chemical mechanical polishing liquid
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
TSV technology (Through-Silicon-Via) is by making vertical conducting between chip and chip, between wafer and wafer, realizes the state-of-the-art technology interconnected between chip.Encapsulate bonding and uses the superimposing technique of salient point different from IC in the past, it is maximum in the density that three-dimensional is stacking that TSV advantage is to make chip, and physical dimension is minimum, shortens and interconnect thus improve the performance of chip speed and reduce power consumption.
When brilliant back of the body thinning technique (backside thinning) needs polishing in TSV technology, to silicon and copper bi-material, there is very high polishing velocity simultaneously.
The polishing of silicon is carried out usually all in the basic conditions, higher polishing velocity can be obtained.Such as:
US2002032987 discloses the polishing fluid of a kind of hydramine as additive, to improve the removal speed (removal rate) of polysilicon (Poly silicon), the wherein preferred 2-of additive (dimethylamino)-2-methyl isophthalic acid-propyl alcohol.
US2002151252 discloses a kind of polishing fluid of complexing agent containing having multiple carboxylic acid structure, remove speed for improving polysilicon, wherein preferred complexing agent is EDTA (ethylenediamine tetraacetic acid (EDTA)) and DTPA (diethyl pentetic acid).
EP1072662 discloses a kind of organic polishing fluid producing delocalization structure containing lone-pair electron and double bond, to improve the removal speed (removal rate) of polysilicon (Poly silicon), preferred compound is compound and the salt thereof of guanidine class.
US2006014390 discloses a kind of polishing fluid of the removal speed for improving polysilicon, and it comprises weight percent be 4.25% ~ 18.5% abrasive and weight percent is the additive of 0.05% ~ 1.5%.Wherein additive is mainly selected from the organic basess such as quaternary ammonium salt, quaternary amine alkali and thanomin.In addition, this polishing fluid also comprises nonionic surface active agent, the homopolymerization of such as ethylene glycol or propylene glycol or copolymerization product.
Patent CN101497765A, by utilizing the synergy of biguanides and azole material, significantly improves the polishing velocity of silicon.
The polishing of copper is carried out usually all in acid condition, utilizes oxygenant (hydrogen peroxide) high oxidation potential in acid condition, and copper easily coordination, dissolving in acid condition, realize high polishing velocity.Such as:
Patent CN 1705725A discloses a kind of polishing fluid of polish copper metallic surface, and this polishing fluid is between 2.5 to 4.0, under the effect of oxygenant (hydrogen peroxide etc.), sequestrant and passivator, removes copper metallic surface.
Patent CN1787895A discloses a kind of CMP composition, and it comprises fluid agent and oxygenant, intercalating agent, inhibitor, abrasive and solvent.In acid condition, this CMP composition is advantageously increased in the material selectivity in CMP method, can be used for the surface of copper member on polishing semiconductor substrate, and can not produce depression or other disadvantageous planarization defects in the copper of polishing.
Patent CN01818940A disclose a kind of copper polish slurry by further with oxygenant as hydrogen peroxide, and/or corrosion inhibitor is as combined in benzotriazole and formed, and what improve copper removes speed.While obtaining this higher polishing speed, maintain the stability of local PH, and significantly reduce whole and part corrosion.
Sometimes also can carry out in the basic conditions the polishing of copper, such as:
Patent CN 1644640A discloses a kind of in the basic conditions for the waterborne compositions of polish copper, said composition comprises the non-ferrous metal inhibitor that weight percent is 0.001% to 6%, weight percent is the coordination agent of 0.05% to 10% this metal, weight percent is 0.01% to 25% for accelerating the copper remover of the removal of copper, weight percent is the abrasive etc. of 0.5% to 40%, by the interaction of copper remover imidazoles and BTA, improve the removal speed of copper.
A kind of multilayer copper wire in large scale integrated circuit chemical and mechanical leveling polishing liquid is disclosed in patent CN1398938A, for improving the removal speed of copper, the moiety of polishing fluid is as follows: the weight percent 18% to 50% of abrasive material, the weight percent 0.1% to 10% of sequestrant, the weight percent 0.005% to 25% of complexing agent, the weight percent 0.1% to 10% of promoting agent, the weight percent 1% to 20% of oxygenant, and deionized water.
In the prior art, polishing in acid condition, although very high copper polishing velocity can be obtained, usually lower to the polishing velocity of silicon.Reason is in acid condition, and the Surface Oxygen of elemental silicon is changed into silicon-dioxide by oxygenant, compared with silicon, and the more difficult removal of silicon-dioxide.
Polishing in the basic conditions, if not oxidizer, although very high silicon polishing speed can be obtained, usually lower to the polishing velocity of copper.Reason is just easily removed after copper needs oxidation.But if added oxygenant, such as hydrogen peroxide, the Surface Oxygen of elemental silicon can have been changed into silicon-dioxide by hydrogen peroxide, more difficult removal.In addition, in the basic conditions, the oxygenants such as hydrogen peroxide are very unstable, can rapid decomposition failure.
Summary of the invention
The technical problem that the present invention solves is to provide a kind of chemical mechanical polishing liquid, while the polishing velocity that improve the copper under alkaline polishing environment, also can have the polishing velocity of silicon and improve significantly.
Chemical mechanical polishing liquid of the present invention, contains: abrasive grains, halogen-containing oxygenant, organic amine and ethylenediamine tetraacetic acid (EDTA) (EDTA), and described chemical mechanical polishing liquid has the pH value of alkalescence.
In the present invention, described abrasive grains is SiO 2, Al 2o 3, ZrO 2, CeO 2, SiC, Fe 2o 3, TiO 2and/or Si 3n 4in one or more, preferred SiO 2.The mass percentage of described abrasive grains is 1% ~ 30%, preferably 1% ~ 15%.
In the present invention, described halogen-containing oxygenant is one or more in potassium bromate, Potassium Iodate, Potcrate, Periodic acid and/or ammonium periodate, preferred potassium bromate.The mass percentage of described halogen-containing oxygenant is 0.5% ~ 4%.
In the present invention, described organic amine is quadrol, piperazine or its composition.The mass percentage of described quadrol is 0.2% ~ 0.8%.The mass percentage of described piperazine is 0% ~ 4%.
In the present invention, the mass percentage of described ethylenediamine tetraacetic acid (EDTA) (EDTA) is 0.01% ~ 6%, preferably 1% ~ 4%.
In the present invention, described chemical mechanical polishing liquid, also contains: pH value regulator, and described pH value regulator is quaternary ammonium hydroxide, mineral alkali or its composition.Described quaternary ammonium hydroxide is Tetramethylammonium hydroxide (TMAH).Described mineral alkali is potassium hydroxide (KOH).
In the present invention, the described pH value of described chemical mechanical polishing liquid is 8 ~ 13, preferably 10 ~ 12.
In the present invention, described chemical mechanical polishing liquid, also contains: amino acid, and described amino acid is glycine or Pidolidone, preferred glycine.Described amino acid whose mass percentage is 1% ~ 8%, preferably 1% ~ 4%.
Positive progressive effect of the present invention is: while the polishing velocity that improve the copper under alkaline polishing environment, also can have the polishing velocity of silicon and improve significantly.Continue to add amino acid in polishing fluid after, chemical mechanical polishing liquid of the present invention, to the removal rate holds steady of silicon and copper, can not cause the obvious reduction of the removal speed to silicon and copper because of the prolongation of time.
Embodiment
preparation embodiment
Table 1 gives the formula of chemical mechanical polishing liquid embodiment 1 ~ 28 of the present invention and comparative example 1 ~ 5,
By component listed in table 1 and content thereof, mix in deionized water, be transferred to required pH value by pH adjusting agent, can chemical mechanical polishing liquid be obtained.
Table 1 chemical mechanical polishing liquid embodiment 1 ~ 28 of the present invention and comparative example 1 ~ 5
effect example 1
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm × 4cm square wafer (Wafer), grinding pressure 3psi, grinding stage rotating speed 70 revs/min, grinding head rotation rotating speed 150 revs/min, polishing fluid rate of addition 100ml/ minute.
Table 2 chemical mechanical polishing liquid effect example 1 ~ 18 of the present invention and comparative example 1 ~ 5
Shown by comparative example 1-5, under situation about existing only having abrasive material and alkaline condition, the removal speed of copper and silicon is all very low.
By embodiment 1-18 and comparative example 1-5 contrast, in polishing fluid, add halogen-containing oxygenant, organic amine, ethylenediamine tetraacetic acid (EDTA) (EDTA), after pH value regulator, the removal speed of alkalescence polishing liquid to copper and silicon is significantly improved.
Contrast discovery each other by embodiment 1-18, in the polishing fluid of alkalescence, increase halogen-containing oxygenant, organic amine, EDTA, one or more the concentration in pH value regulator, be all conducive to the removal speed improving copper and silicon.
effect example 2
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm × 4cm square wafer (Wafer), grinding pressure 3psi, grinding stage rotating speed 70 revs/min, grinding head rotation rotating speed 150 revs/min, polishing fluid rate of addition 100ml/ minute.
Table 3 chemical mechanical polishing liquid effect example 2 and 3 of the present invention
Relatively can be found by embodiment in table 32 and 3, situation about existing when there being amino acid, the removal speed of copper and silicon can keep stable in the basic conditions, can not reduce along with the prolongation of time.

Claims (14)

1. the application of chemical mechanical polishing liquid in raising and stabilized copper and silicon polishing speed, described chemical mechanical polishing liquid contains: abrasive grains, halogen-containing oxygenant, organic amine and ethylenediamine tetraacetic acid (EDTA) (EDTA), and amino acid, described chemical mechanical polishing liquid has the pH value of alkalescence, and described organic amine is quadrol, piperazine or its composition.
2. application according to claim 1, described abrasive grains is SiO 2, Al 2o 3, ZrO 2, CeO 2, SiC, Fe 2o 3, TiO 2and/or Si 3n 4in one or more.
3. application according to claim 1, the mass percentage of described abrasive grains is 1% ~ 30%.
4. application according to claim 1, described halogen-containing oxygenant is one or more in potassium bromate, Potassium Iodate, Potcrate, Periodic acid and/or ammonium periodate.
5. application according to claim 1, the mass percentage of described halogen-containing oxygenant is 0.5% ~ 4%.
6. application according to claim 1, the mass percentage of described quadrol is 0.2% ~ 0.8%.
7. application according to claim 1, the mass percentage of described piperazine is 0% ~ 4%.
8. application according to claim 1, the mass percentage of described ethylenediamine tetraacetic acid (EDTA) (EDTA) is 0.01% ~ 6%.
9. application according to claim 1, also contains: pH value regulator, and described pH value regulator is quaternary ammonium hydroxide, mineral alkali or its composition.
10. application according to claim 9, described quaternary ammonium hydroxide is Tetramethylammonium hydroxide (TMAH).
11. application according to claim 9, described mineral alkali is potassium hydroxide (KOH).
12. application according to claim 1, described pH value is 8 ~ 13.
13. application according to claim 1, described amino acid be glycine or L ?L-glutamic acid.
14. application according to claim 1, described amino acid whose mass percentage is 1% ~ 8%.
CN201010277685.6A 2010-09-10 2010-09-10 Chemical mechanical polishing solution Active CN102399494B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201010277685.6A CN102399494B (en) 2010-09-10 2010-09-10 Chemical mechanical polishing solution
PCT/CN2011/001450 WO2012031452A1 (en) 2010-09-10 2011-08-29 Chemical mechanical polishing solution

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201010277685.6A CN102399494B (en) 2010-09-10 2010-09-10 Chemical mechanical polishing solution

Publications (2)

Publication Number Publication Date
CN102399494A CN102399494A (en) 2012-04-04
CN102399494B true CN102399494B (en) 2014-12-31

Family

ID=45810088

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010277685.6A Active CN102399494B (en) 2010-09-10 2010-09-10 Chemical mechanical polishing solution

Country Status (2)

Country Link
CN (1) CN102399494B (en)
WO (1) WO2012031452A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6053311B2 (en) * 2012-04-17 2016-12-27 株式会社フジミインコーポレーテッド Polishing composition used for polishing semiconductor substrate having through silicon via structure and polishing method using the polishing composition
US9150759B2 (en) * 2013-09-27 2015-10-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc Chemical mechanical polishing composition for polishing silicon wafers and related methods
CN106319521A (en) * 2016-10-24 2017-01-11 马鞍山顺发机械制造有限公司 Compound brightener for metal surface of automobile
CN106833389A (en) * 2017-01-10 2017-06-13 清华大学 A kind of chemical-mechanical polishing compositions suitable for gallium arsenide wafer
CN111378369B (en) * 2018-12-28 2022-05-13 安集微电子科技（上海）股份有限公司 Chemical mechanical polishing solution and application thereof
CN111378384A (en) * 2018-12-28 2020-07-07 安集微电子科技（上海）股份有限公司 Chemical mechanical polishing solution
CN111378370B (en) * 2018-12-28 2022-05-13 安集微电子科技（上海）股份有限公司 Chemical mechanical polishing solution
CN111378973A (en) * 2018-12-28 2020-07-07 安集微电子科技（上海）股份有限公司 Chemical mechanical polishing solution and application thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1106663A1 (en) * 1999-12-08 2001-06-13 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6524167B1 (en) * 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
CN1165975C (en) * 1997-04-30 2004-09-08 美国3M公司 Method of planarizing upper surface of semiconductor wafer
CN1735671A (en) * 2002-12-10 2006-02-15 高级技术材料公司 Passivative chemical mechanical polishing composition for copper film planarization
CN1305984C (en) * 2002-06-07 2007-03-21 卡伯特微电子公司 Method for chemical mechanical polishing (cmp) of low-k dielectric materials
TW201013771A (en) * 2008-09-30 2010-04-01 Dupont Air Products Nano Materials Llc Method for forming through-base wafer vias in fabrication of stacked devices
CN101724346A (en) * 2008-10-10 2010-06-09 安集微电子（上海）有限公司 Chemical mechanical polishing solution

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008074990A (en) * 2006-09-22 2008-04-03 Nihon Micro Coating Co Ltd Polishing slurry and method
JP5646862B2 (en) * 2009-09-18 2014-12-24 長興開発科技股▲ふん▼有限公司 Polishing method of semiconductor wafer having through silicon via structure and polishing composition used therefor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1165975C (en) * 1997-04-30 2004-09-08 美国3M公司 Method of planarizing upper surface of semiconductor wafer
EP1106663A1 (en) * 1999-12-08 2001-06-13 Eastman Kodak Company Slurry for chemical mechanical polishing silicon dioxide
US6524167B1 (en) * 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
CN1305984C (en) * 2002-06-07 2007-03-21 卡伯特微电子公司 Method for chemical mechanical polishing (cmp) of low-k dielectric materials
CN1735671A (en) * 2002-12-10 2006-02-15 高级技术材料公司 Passivative chemical mechanical polishing composition for copper film planarization
TW201013771A (en) * 2008-09-30 2010-04-01 Dupont Air Products Nano Materials Llc Method for forming through-base wafer vias in fabrication of stacked devices
CN101724346A (en) * 2008-10-10 2010-06-09 安集微电子（上海）有限公司 Chemical mechanical polishing solution

Also Published As

Publication number Publication date
WO2012031452A1 (en) 2012-03-15
CN102399494A (en) 2012-04-04

Similar Documents

Publication Publication Date Title
CN102399494B (en) Chemical mechanical polishing solution
TWI721074B (en) Chemical mechanical polishing slurry and application thereof
CN101970595B (en) A chemical mechanical polishing liquid
CN1735671A (en) Passivative chemical mechanical polishing composition for copper film planarization
CN103897602B (en) A kind of chemical mechanical polishing liquid and polishing method
CN103897600A (en) Chemical mechanical polishing liquid and application thereof
CN103450810B (en) A kind of chemical-mechanical planarization sizing agent and its application
CN104371553B (en) A kind of chemical mechanical polishing liquid and application
CN102816530B (en) A kind of chemical mechanical polishing liquid
CN102101980B (en) A kind of chemical mechanical polishing liquid
CN101955732A (en) Chemical mechanical polishing solution
CN101665663B (en) Chemical mechanical polishing solution
CN102337079B (en) Chemically mechanical polishing agent
CN102408834B (en) Chemical mechanical polishing liquid
CN102477259A (en) Chemically mechanical polishing slurry
CN104745094B (en) A kind of chemical mechanical polishing liquid
CN103897601B (en) A kind of chemical mechanical polishing liquid and polishing method
CN101457124B (en) Chemico-mechanical polishing liquid
JP4231950B2 (en) Metal film abrasive
CN101550317A (en) Chemical mechanical polishing solution for polishing polysilicon
CN103045099B (en) Chemical mechanical polishing solution for polishing polycrystalline silicon
CN101955731A (en) Chemical mechanical polishing solution
CN102559061A (en) Silicon-and-copper chemical-mechanical planarization slurry containing organic acid
CN102533117A (en) Chemical mechanical polishing solution for TSV (Through Silicon Via) silicon polishing of 3D (Three-Dimensional) packaging
TWI490290B (en) Chemical mechanical polishing solution

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant