CN102412361B - Laminated heat dissipation substrate and electronic assembly structure using same - Google Patents
Laminated heat dissipation substrate and electronic assembly structure using same Download PDFInfo
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- CN102412361B CN102412361B CN201110126956.2A CN201110126956A CN102412361B CN 102412361 B CN102412361 B CN 102412361B CN 201110126956 A CN201110126956 A CN 201110126956A CN 102412361 B CN102412361 B CN 102412361B
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- 239000000758 substrate Substances 0.000 title claims abstract description 77
- 230000017525 heat dissipation Effects 0.000 title abstract 4
- 239000010410 layer Substances 0.000 claims description 208
- 238000009413 insulation Methods 0.000 claims description 49
- 229920005989 resin Polymers 0.000 claims description 42
- 239000011347 resin Substances 0.000 claims description 42
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- -1 amido formate Chemical compound 0.000 claims description 18
- 229910052802 copper Inorganic materials 0.000 claims description 18
- 239000010949 copper Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 238000004806 packaging method and process Methods 0.000 claims description 14
- 239000011241 protective layer Substances 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000000203 mixture Substances 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 229910017052 cobalt Inorganic materials 0.000 claims description 9
- 239000010941 cobalt Substances 0.000 claims description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 9
- 239000011733 molybdenum Substances 0.000 claims description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000011135 tin Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 239000004925 Acrylic resin Substances 0.000 claims description 6
- 229920000178 Acrylic resin Polymers 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000004695 Polyether sulfone Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 150000002894 organic compounds Chemical class 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229920003192 poly(bis maleimide) Polymers 0.000 claims description 6
- 229920001643 poly(ether ketone) Polymers 0.000 claims description 6
- 229920006122 polyamide resin Polymers 0.000 claims description 6
- 229920006393 polyether sulfone Polymers 0.000 claims description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 6
- 229920001721 polyimide Polymers 0.000 claims description 6
- 239000009719 polyimide resin Substances 0.000 claims description 6
- 229920003987 resole Polymers 0.000 claims description 6
- 229920002050 silicone resin Polymers 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 229920006337 unsaturated polyester resin Polymers 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- 239000004962 Polyamide-imide Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- HRRDCWDFRIJIQZ-UHFFFAOYSA-N naphthalene-1,8-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=CC2=C1 HRRDCWDFRIJIQZ-UHFFFAOYSA-N 0.000 claims description 5
- 229920002312 polyamide-imide Polymers 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical group [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 3
- 239000005751 Copper oxide Substances 0.000 claims description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910000431 copper oxide Inorganic materials 0.000 claims description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910001182 Mo alloy Inorganic materials 0.000 claims description 2
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims 3
- 238000000429 assembly Methods 0.000 claims 3
- 229910001096 P alloy Inorganic materials 0.000 claims 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Abstract
The invention provides a laminated heat dissipation substrate and an electronic assembly structure using the same. The laminated heat dissipation substrate includes a substrate, a laminated bonding layer, an insulating layer, and a conductive layer. The laminated bonding layer is arranged on the substrate and at least comprises a first bonding layer and a second bonding layer. The first bonding layer is disposed on the substrate. The second bonding layer is disposed on the first bonding layer. The insulating layer is disposed on the laminated bonding layer. The conductive layer is disposed on the insulating layer. The electronic assembly structure comprises the laminated heat dissipation substrate and an electronic assembly. The insulating layer and the conductive layer further enclose an accommodating space on the laminated bonding layer, and the accommodating space exposes the laminated bonding layer. The electronic assembly is arranged in the accommodating space and on the laminated bonding layer and is electrically connected with the conductive layer. The electronic component is preferably a light emitting diode.
Description
Technical field
The invention relates to a kind of stacking heat-radiating substrate, can use by supplied for electronic assembly. Specifically, the invention relates to a kind of stacking heat-radiating substrate for photodiode.
Background technology
In recent years along with the development of High Power LED (LED) technology, its luminous efficiency is promoted to 160��more than 170lm/W gradually. But, its electro-optical efficiency only about 40��50%. In other words, the electric energy of its input still has exhausted major part to convert heat energy to, if these heat energy can not be directed at external environment fast, chip temperature will be caused to rise, and then affect luminous intensity and life-span. Therefore, the heat management problems of high-capacity LED product is more and more paid attention to.
In LED product, printed circuit board (PCB) is indispensable part, it is provided that electronic package is installed and interconnection prop carrier, is again wherein main raw taking heat-radiating substrate. General industry the most often uses metal substrate as heat-radiating substrate, and as shown in Figure 1A, existing electronics packaging assembly 90 comprises aluminum metal substrate 10, insulation layer 50 and conductive layer 70. Namely the maximum heat radiation bottleneck of this type substrate is the insulation layer 50 between conductive layer 70 and aluminum metal substrate 10. Insulation layer 50 uses epoxy resin as main raw mostly, but because of its heat-conduction coefficient on the low side, it is necessary to add heat conductive filler separately, such as fillers such as aluminum oxide, aluminium nitride and boron nitride, improve the heat-conduction coefficient of this layer, and then reduce the thermal impedance of this substrate. Even so, the heat-conduction coefficient of insulation layer 50 is still far below metallic substance, therefore is still the main bottleneck of heat radiation. On the other hand, as shown in Figure 1B, in different embodiments, may have, between the aluminum metal substrate 10 of existing electronics packaging assembly 90 and insulation layer 50, the demand that copper containing layer 33 is set.But, copper containing layer 33 is not good with the adhesion of aluminum metal substrate 10, easily makes copper containing layer 33 peel off from aluminum metal substrate 10.
Summary of the invention
The main purpose of the present invention, for providing a kind of stacking heat-radiating substrate, has preferably adhesive force of metal layer.
Another object of the present invention, for providing a kind of stacking heat-radiating substrate, has thinner thickness.
Another object of the present invention, for providing a kind of electronics packaging assembly, has preferably heat-sinking capability.
The stacking heat-radiating substrate of the present invention comprises substrate, stacking bond layer, insulation layer and conductive layer. Stacking bond layer is arranged on substrate, at least comprises the first bond layer and the 2nd bond layer. First bond layer is arranged on substrate. 2nd bond layer is arranged on the first bond layer, and the sticking power of the first bond layer and substrate is greater than the sticking power of the 2nd bond layer and substrate. Insulation layer is arranged on stacking bond layer. Conductive layer is arranged on insulation layer.
Substrate comprises aluminum or aluminum alloy or copper or copper alloy. 2nd bond layer is copper or copper alloy. Stacking bond layer comprises the 3rd bond layer further, is arranged between the first bond layer and the 2nd bond layer, and wherein the 3rd bond layer comprises metal, metal alloy or pottery. The sticking power that the sticking power of the 3rd bond layer and the first bond layer and the 2nd bond layer is greater than between the first bond layer and the 2nd bond layer. In the preferred embodiment, the first bond layer contains zinc. The nickel content of the 3rd bond layer is greater than 90%, and phosphorus content is less than 10%. Stacking bond layer comprises protective layer further, and under being arranged at insulation layer, protective layer comprises metal, metal alloy, metal oxide or organic compound. Protective layer can be copper oxide or chromated oxide; or can be nitrogenous, containing oxygen, containing phosphorus or containing the organic compound of sulphur; also can be silicane organic compound, or also can be nickel, cobalt, zinc, chromium, molybdenum, copper, nickelalloy, cobalt-base alloy, zinc alloy, Chrome metal powder, molybdenum alloy, copper alloy or its mixture.
The material of insulation layer is included as polyimide resin, polyamide-imide resin, poly-naphthalic acid resin, epoxy resin, acrylic resin, amido formate system resin, silicone resin, poly-to ring dimethylbenzene system resin, bismaleimides system resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, urethane resin, resol, polyethersulfone resin, polyethylene terephthalate or its mixture. Conductive layer is selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
In different embodiments, stacking heat-radiating substrate can comprise toss about insulation layer and conductive layer of tossing about further. Insulation layer of tossing about is arranged at the another side of substrate relative to stacking bond layer. Conductive layer of tossing about is arranged at the another side of insulation layer opposing substrate of tossing about. Stacking heat-radiating substrate can comprise a plurality of hole further and run through toss about insulation layer and conductive layer of tossing about, and is filled with thermally conductive material in hole. The material of insulation layer of tossing about is included as polyimide resin, epoxy resin, acrylic resin, amido formate system resin, silicone resin, poly-to ring dimethylbenzene system resin, bismaleimides system resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, urethane resin, resol, polyethersulfone resin, polyethylene terephthalate or its mixture. Conductive layer of tossing about is selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
The electronics packaging assembly of the present invention comprises aforementioned stacking heat-radiating substrate and electronic package. Wherein, insulation layer and conductive layer cross accommodating space further on stacking bond layer, and accommodating space exposes stacking bond layer. Electronic package is arranged in accommodating space and on stacking bond layer, and is electrically connected with conductive layer. Electronic package is preferably photodiode.
Above-mentioned explanation is only the general introduction of technical solution of the present invention, in order to the technique means of the present invention can be better understood, and can be implemented according to the content of specification sheets, and in order to above and other objects of the present invention, feature and advantage can be become apparent, below especially exemplified by better embodiment, and coordinate accompanying drawing, it is described in detail as follows.
Accompanying drawing explanation
Figure 1A and 1B is prior-art illustration;
Fig. 2,3A, 3B, 4,5A, 5B and 6A be different embodiments of the invention schematic diagram;
Fig. 6 B is the better embodiment schematic diagram of the present invention; And
Fig. 6 C, 7A and 7B are different embodiments of the invention schematic diagram.
Embodiment
Technique means and effect that predetermined goal of the invention is taked is reached for further setting forth the present invention, below in conjunction with accompanying drawing and better embodiment, the stacking heat-radiating substrate propose foundation the present invention and its embodiment of electronics packaging assembly using this stacking heat-radiating substrate, structure, feature and effect thereof, be described in detail as follows.
Embodiment as shown in Figure 2, the stacking heat-radiating substrate 800 of the present invention comprises substrate 100, stacking bond layer 300, insulation layer 500 and conductive layer 700. Specifically, substrate 100 is preferably and uses metal or alloy to make, and owing to this type of material is with good thermal conductivity, therefore can promote the radiating effect of heat-radiating substrate 800 entirety further. Wherein, because aluminium quality is relatively light, price is lower and has good thermal conductivity, therefore in the preferred embodiment, substrate 100 uses aluminum or aluminum alloy to make.
Stacking bond layer 300 is arranged on substrate 100, at least comprises the first bond layer 310 and the 2nd bond layer 320. First bond layer 310 is arranged on substrate 100, better but do not limit containing zinc. 2nd bond layer 320 is arranged on the first bond layer 310. 2nd bond layer 320 is copper or copper alloy. Wherein, the 2nd bond layer 320 is lower with the sticking power of the substrate 100 using aluminum or aluminum alloy to make, and the first bond layer 310 then has good sticking power with substrate 100.
Stacking bond layer 300 comprises the 3rd bond layer 330 further, is arranged between the first bond layer 310 and the 2nd bond layer 320, and wherein the 3rd bond layer 330 comprises metal, metal alloy or pottery. Metal is selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum. In the preferred embodiment, the 3rd bond layer 330 is nickelalloy, and nickel content is between 90% to 100%, and phosphorus content is between 0 to 10%. Wherein, the 3rd bond layer 330 and the first bond layer 310 and all there is good sticking power with the 2nd bond layer 320. Furthermore, the 3rd bond layer 330 respectively and the first bond layer 310 and and the 2nd bond layer 320 between sticking power better, be greater than the first bond layer 310 and and the 2nd bond layer 320 between sticking power. Therefore, the 2nd bond layer 320 can be attached on the first bond layer 310 more well by the 3rd bond layer 330.
Comprehensive speech, embodiment as shown in Figure 3A, stacking bond layer 300 is except comprising the first bond layer 310 and the 2nd bond layer 320, can comprise multiple bond layer further is sequentially laminated between the first bond layer 310 and the 2nd bond layer 320, and each adjacent bond layer has good sticking power to each other.By this, even if the bond layer being laminated in the superiors is not good with the sticking power of substrate 100, the bond layer being located in therebetween still can be utilized to be attached to well on substrate 100. Wherein, each bond layer can select identical or different materials, also namely available identical or different material successively stacking go out adjacent bond layer. On the other hand, can by control formation condition such as ratio, temperature, the time etc. in the middle of processing procedure, order uses the different bond layers of identical material to have different physics, chemical property.
Insulation layer 500 is arranged on stacking bond layer 300. Conductive layer 700 is arranged on insulation layer 500. Wherein, the material of insulation layer is included as polyimide resin, polyamide-imide resin, poly-naphthalic acid resin, epoxy resin, acrylic resin, amido formate system resin, silicone resin, poly-to ring dimethylbenzene system resin, bismaleimides system resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, urethane resin, resol, polyethersulfone resin, polyethylene terephthalate or its mixture. Conductive layer is selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
Different embodiments as shown in Figure 3 B, stacking bond layer 300 comprises protective layer 333 further, is arranged between the 2nd bond layer 320 and insulation layer 500. In other words, protective layer 333 is the superiors of multiple bond layers that stacking bond layer 300 comprises. Protective layer 333 comprises metal, metal alloy, metal oxide or organic compound. 2nd bond layer 320 is copper in this embodiment, and protective layer 333 is copper oxide. The insulation layer 500 that protective layer 333 is not only upper and lower with it respectively and the 2nd bond layer 320 have good sticking power, more can have anti-welding protected effect of Denging. But in other different embodiment; 2nd bond layer 320 can be copper alloy, and protective layer 333 can be the mixture of or its alloy of other metal oxide (such as: chromated oxide), organic compound (such as: nitrogenous, containing oxygen, containing phosphorus or containing the organic compound of sulphur or silicane organic compound), one or more metals (such as nickel, cobalt, zinc, chromium, molybdenum, copper) itself. Wherein, protective layer 333 can overlapped way be arranged further, and is above-mentioned arbitrary combination.
As shown in Figure 4, in different embodiments, stacking heat-radiating substrate 800 can comprise toss about insulation layer 550 and conductive layer 770 of tossing about further. Insulation layer 550 of tossing about is arranged at the another side of the relative stacking bond layer 300 of substrate 100. Conductive layer 770 of tossing about is arranged at the another side of insulation layer 550 opposing substrate 100 of tossing about. The material of insulation layer 550 of tossing about is included as polyimide resin, polyamide-imide resin, poly-naphthalic acid resin, epoxy resin, acrylic resin, amido formate system resin, silicone resin, poly-to ring dimethylbenzene system resin, bismaleimides system resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, urethane resin, resol, polyethersulfone resin, polyethylene terephthalate or its mixture. Conductive layer 770 of tossing about is selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
In different embodiments as shown in Figure 4, stacking heat-radiating substrate 800 can comprise a plurality of hole 400 further and run through toss about insulation layer 550 and conductive layer 770 of tossing about. In different embodiments, thermally conductive material (not illustrating) can be filled with in a plurality of hole 400.Wherein, the position of hole 400, quantity, internal diameter or distribution mode etc., can change according to design requirement. The heat-conduction coefficient of thermally conductive material is preferably and is greater than 10W/mK, comprises metal, alloy, pottery, metal or pottery-polymer composite, thermal conductive silicon resin or its mixture. Wherein, metal can be silver, copper, aluminium, nickel or iron, and alloy can be tinsel, tin pb-ag alloy or SAC. Pottery can be aluminum oxide, boron nitride, aluminium nitride, silicon carbide, carbon nanotube or graphite etc. Thermally conductive material is filled in mode its changes in material properties visual of hole 400, such as can be poured into hole 400 when thermal conductive silicon resin heat conduction thing is flow state, or make the plating of metal heat-conducting thing be formed in hole 400, or with mechanical force by solid metal-polymer composite heat conduction thing press-in hole 400. Wherein, heat conduction thing is not limited to fill up hole 400, it is also possible to the mode of coverage hole 400 sidewall is arranged. In different embodiments, in a plurality of hole 400, electronic package (not illustrating) also can be set.
Embodiment as shown in Figure 5A, the electronics packaging assembly 900 of the present invention comprises aforementioned stacking heat-radiating substrate 800 and electronic package 200. Wherein, insulation layer 500 and conductive layer 700 cross accommodating space 600 further on stacking bond layer 300, and accommodating space 600 exposes stacking bond layer 300. In the preferred embodiment, it is the stacking heat-radiating substrate 800 shown in Fig. 2 is removed with physics or chemical mode etching specific region insulation layer 500 and conductive layer 700, to form accommodating space 600. As shown in Figure 5A, electronic package 200 is arranged in accommodating space 600 and on stacking bond layer 300, and is electrically connected with conductive layer 700. Wherein, the mode of connection is preferably and uses wire 222. Electronic package 200 is preferably photodiode, and also namely electronics packaging assembly 900 is preferably for light emitting diode illuminating apparatus. But in different embodiments, electronics packaging assembly 900 can be used for other electronic installation. Specifically, in the electronics packaging assembly 900 of the present invention, between electronic package 200 and substrate 100, there is no insulation layer 500, integral thickness can be made to reduce. On the other hand, the heat produced when electronic package 200 operates can more directly be sent to substrate 100 and dispel the heat, can improving heat radiation efficiency.
Between the 2nd bond layer 320 of different embodiments as shown in Figure 5 B, electronic package 200 and stacking bond layer 300, between the 2nd bond layer 320 and the 3rd bond layer 330, between the 3rd bond layer 330 and the first bond layer 310, between the first bond layer 310 and substrate 100, there is good sticking power respectively. Therefore, even if electronic package 200 sticking power that is direct and substrate 100 is not good, the first bond layer 310 being located in therebetween, the 3rd bond layer 330 and the 2nd bond layer 320 still can be utilized to be attached to well on substrate 100.
In the such as embodiment shown in Fig. 6 A to Fig. 6 C, wherein, protective layer 333 optionally retains (such as Fig. 6 A) in processing procedure or removes (such as Fig. 6 B). In other words, protective layer 333 can retain in processing procedure and be arranged at insulation layer 500 times as shown in Figure 6A simultaneously and be exposed to accommodating space 600, or can remove in processing procedure and only be arranged at insulation layer 500 times as shown in Figure 6B. On the other hand, insulation layer 500 can be arranged with overlapped way further. Such as in the embodiment shown in Fig. 6 C, insulation layer 500 comprises the first insulation layer 510 and the 2nd insulation layer 520. Therefore then effect can be increased by this. Furthermore, as shown in figs. 7 a and 7b, insulation layer 500 and conductive layer 700 also can be arranged in stacking.
The above, it it is only the better embodiment of the present invention, not the present invention is done any restriction in form, although the present invention discloses as above with better embodiment, but and be not used to limit the present invention, any those skilled in the art, do not departing within the scope of technical solution of the present invention, make a little change when the technology contents of above-mentioned announcement can be utilized or it is modified to the equivalent embodiment of equivalent variations, in every case it is do not depart from technical solution of the present invention content, the any simple modification above embodiment done according to the technical spirit of the present invention, equivalent variations and modification, all still belong in the scope of technical solution of the present invention.
Claims (13)
1. a stacking heat-radiating substrate, it is characterised in that, comprise:
One substrate;
One stacking bond layer, is arranged on this substrate, at least comprises:
One first bond layer, is arranged on this substrate; And
One the 2nd bond layer, is arranged on this first bond layer, and the sticking power of this first bond layer and this substrate is greater than the sticking power of the 2nd bond layer and this substrate, and the 2nd bond layer is copper or copper alloy;
One insulation layer, being arranged on this stacking bond layer, the material of this insulation layer is polyimide resin, polyamide-imide resin, poly-naphthalic acid resin, epoxy resin, acrylic resin, amido formate system resin, silicone resin, poly-to ring dimethylbenzene system resin, bismaleimides system resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, urethane resin, resol, polyethersulfone resin, polyethylene terephthalate or its mixture; And
One conductive layer, is arranged on this insulation layer;
Wherein, this stacking bond layer comprises a protective layer further; under being arranged at this insulation layer; and between this insulation layer and the 2nd bond layer; this protective layer is copper oxide or chromated oxide; or nitrogenous, containing oxygen, containing phosphorus or containing the organic compound of sulphur, or silicane organic compound, or nickel, cobalt, zinc, chromium, molybdenum, nickelalloy, cobalt-base alloy, zinc alloy, Chrome metal powder, molybdenum alloy or its mixture.
2. stacking heat-radiating substrate as claimed in claim 1, it is characterised in that, this first bond layer contains zinc.
3. stacking heat-radiating substrate as claimed in claim 1, it is characterised in that, this substrate comprises aluminum or aluminum alloy or copper or copper alloy.
4. stacking heat-radiating substrate as claimed in claim 1, it is characterized in that, this stacking bond layer comprises one the 3rd bond layer further, it is arranged between this first bond layer and the 2nd bond layer, the sticking power that the sticking power of the 3rd bond layer and this first bond layer and the 2nd bond layer is greater than between this first bond layer and the 2nd bond layer.
5. stacking heat-radiating substrate as claimed in claim 4, it is characterised in that, the 3rd bond layer comprises metal, metal alloy or pottery.
6. stacking heat-radiating substrate as described in claim 4 or 5, it is characterised in that, the 3rd bond layer is nickelalloy or nickel-phosphorus alloy, and its nickel content is greater than 90%, and phosphorus content is less than 10%.
7. stacking heat-radiating substrate as claimed in claim 1, it is characterised in that, this conductive layer is selected from tin, nickel, silver, copper, gold, palladium, cobalt, chromium, titanium, platinum, tantalum, tungsten and molybdenum.
8. stacking heat-radiating substrate as claimed in claim 1, it is characterised in that, comprise further:
One tosses about insulation layer, is arranged at the another side of this substrate relative to this stacking bond layer;
One tosses about conductive layer, is arranged at the another side of this insulation layer of tossing about relative to this substrate; And
A plurality of hole, this plurality of hole runs through this toss about insulation layer and this conductive layer of tossing about, and is filled with thermally conductive material in this hole.
9. stacking heat-radiating substrate as claimed in claim 8, it is characterized in that, the material of this insulation layer of tossing about is included as polyimide resin, polyamide-imide resin, poly-naphthalic acid resin, epoxy resin, acrylic resin, amido formate system resin, silicone resin, poly-to ring dimethylbenzene system resin, bismaleimides system resin, polyether ketone resin, unsaturated polyester resin, polyamide resin, urethane resin, resol, polyethersulfone resin, polyethylene terephthalate or its mixture.
10. an electronics packaging assembly, it is characterised in that, comprise:
Stacking heat-radiating substrate as claimed in claim 1, wherein this insulation layer and this conductive layer cross an accommodating space further on this stacking bond layer, and this accommodating space exposes this stacking bond layer; And
One electronic package, is arranged in this accommodating space and on this stacking bond layer, and is electrically connected with this conductive layer.
11. electronics packaging assemblies as claimed in claim 10, it is characterized in that, this stacking bond layer comprises one the 3rd bond layer further, it is arranged between this first bond layer and the 2nd bond layer, the sticking power that the sticking power of the 3rd bond layer and this first bond layer and the 2nd bond layer is greater than between this first bond layer and the 2nd bond layer.
12. electronics packaging assemblies as claimed in claim 10, it is characterised in that, this insulation layer arranges with stacking or individual layer mode.
13. electronics packaging assemblies as claimed in claim 10, it is characterised in that, this insulation layer and this conductive layer stacking are arranged.
Applications Claiming Priority (4)
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| TW099131992 | 2010-09-21 | ||
| TW99131992 | 2010-09-21 | ||
| TW100110313A TWI481085B (en) | 2010-09-21 | 2011-03-25 | A laminated heat dissipating plate and an electronic assembly structure using the same |
| TW100110313 | 2011-03-25 |
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| CN102412361A CN102412361A (en) | 2012-04-11 |
| CN102412361B true CN102412361B (en) | 2016-06-08 |
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| CN103951469B (en) * | 2014-04-02 | 2015-06-24 | 西安理工大学 | Preparation method of metal ceramic composite heat radiation material |
| CN104009147A (en) * | 2014-06-12 | 2014-08-27 | 上海虔敬节能环保科技有限公司 | LED multifunctional packaging structure and packaging technology thereof |
| CN105047790B (en) * | 2015-08-14 | 2018-01-12 | 南陵旺科知识产权运营有限公司 | A kind of practical high-power LED encapsulation structure |
| CN105489747B (en) * | 2015-12-31 | 2017-12-26 | 乐健科技（珠海）有限公司 | High-thermal conductive metal base plate and preparation method thereof, LED module and preparation method thereof |
| KR20210016231A (en) * | 2019-08-02 | 2021-02-15 | 삼성디스플레이 주식회사 | Panel bottom sheet and display including the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR101260179B1 (en) | 2013-05-06 |
| JP2012066583A (en) | 2012-04-05 |
| CN102412361A (en) | 2012-04-11 |
| KR20120030928A (en) | 2012-03-29 |
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