CN102437560B - Surge current suppression circuit module with recoverable over-current protection function - Google Patents
Surge current suppression circuit module with recoverable over-current protection function Download PDFInfo
- Publication number
- CN102437560B CN102437560B CN201110430595.0A CN201110430595A CN102437560B CN 102437560 B CN102437560 B CN 102437560B CN 201110430595 A CN201110430595 A CN 201110430595A CN 102437560 B CN102437560 B CN 102437560B
- Authority
- CN
- China
- Prior art keywords
- resistance
- oxide
- semiconductor
- metal
- triode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention discloses a surge current suppression circuit module with a recoverable over-current protection function. The circuit module composed of a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) V1, a triode V2 and a voltage stabilizing diode V3 is arranged between a primary bus and a load end. By adopting the surge current suppression circuit module, surge current suppression and recoverable protection against input over-current are realized so as to maximally protect a power supply bus of a satellite.
Description
Technical field
The present invention relates to a kind of have can flow recovery defencive function surge current suppression circuit module, be applicable to satellite and other circuit that need to realize Inrush current restraining and can recover to input overcurrent protection function.
Background technology
APS star sensor is the important attitude measurement parts in satellite control system, and the power supply of APS star sensor is input as primary power source, and the various secondary power supplies that its inside is used provide by the secondary power supply module that is arranged on star sensor inside.Secondary power supply module will provide required secondary power supply for probe circuit, data processing circuit, the refrigerator control circuit of star sensor.
Due to satellite bussed supply power limited, and between the positive negative wire of the electronic circuit of using, there is jumbo electric capacity to exist, if do not taken measures, moment electric capacity instantaneous short-circuit in a certain unit start, to cause very large surge current and start surge current, can cause the instantaneous big ups and downs of busbar voltage of satellite, thereby affect the normal operation of other units.In addition, if when a certain unit is short-circuited fault, must take measures this unit to separate from a bus, to protect bus one time.The construction standard of each satellite platform all proposes for this reason, at the input of secondary power supply, need design surge restraint circuit and input overcurrent protection circuit, and in a foreseeable future, starts surge current and also will require suppressed.
At present, existing secondary power supply surge current suppression circuit can only carry out self Inrush current restraining at booting moment, and the startup surge current in the time of can not starting load suppresses, and can not when normal operation, carry out repeatedly Inrush current restraining.Input overcurrent protection circuit all adopts the method for fuse parallel connection, because fuse is hot melt element, therefore when Denso, welding temperature is had relatively high expectations, and has the rear expendable shortcoming of fusing.
Therefore, need to develop a kind of circuit module of simple in structure, reliable in function, can, when realizing repeatedly Inrush current restraining, realize recoverable overcurrent protection function.
Summary of the invention
Technology of the present invention is dealt with problems and is: for the deficiencies in the prior art, provide a kind of have can flow recovery defencive function surge current suppression circuit module.The present invention integrates Inrush current restraining and can recover to input overcurrent protection, has farthest protected the power source bus of satellite.
Technical solution of the present invention is:
A kind of have can flow recovery defencive function surge current suppression circuit module, between bus and load end, comprise the circuit module being formed by resistance R 1, R2, R3, R4, R5, metal-oxide-semiconductor V1, triode V2 and voltage stabilizing didoe V3, wherein, after resistance R 1, resistance R 2 and metal-oxide-semiconductor V1 series connection, be parallel between positive and negative busbar, when described circuit module is used for negative wire, after being connected with the negative electrode of voltage stabilizing didoe V3, one end of described resistance R 3 is connected with the series connection end of resistance R 1 and resistance R 2; The other end of described resistance R 3 is connected with negative wire with the anode of voltage stabilizing didoe V3 and one end of resistance R 4; When described circuit module is used for main track, after being connected with the anode of voltage stabilizing didoe V3, one end of described resistance R 3 is connected with the series connection end of resistance R 1 and resistance R 2; The other end of described resistance R 3 is connected with main track with the negative electrode of diode V3 and one end of resistance R 4.
When described circuit module is used for negative wire, described metal-oxide-semiconductor V1 adopts N-channel MOS pipe, and described triode V2 adopts NPN triode; The collector electrode of described triode V2 is connected with the negative electrode of voltage stabilizing didoe V3; The emitter of described triode V2 is connected with the anode of voltage stabilizing didoe V3 with one end of resistance R 4; The base stage of described triode V2 is connected with the other end of resistance R 4 and the source electrode of metal-oxide-semiconductor V1 by resistance R 5.
When described circuit module is used for main track, described metal-oxide-semiconductor V1 adopts P channel MOS tube, and described triode V2 adopts PNP triode; The collector electrode of described triode V2 is connected with the anode of voltage stabilizing didoe V3; The emitter of described triode V2 is connected with the negative electrode of voltage stabilizing didoe V3 with one end of resistance R 4; The base stage of described triode V2 is connected with the other end of resistance R 4 and the source electrode of metal-oxide-semiconductor V1 by resistance R 5.
On bus after electric-opening, the electric current I that the drain-source of metal-oxide-semiconductor V1 can be passed through
dshown in following formula,
Wherein, I
gSgate source voltage for metal-oxide-semiconductor V1; U
thcut-in voltage for metal-oxide-semiconductor V1; I
dOfor working as U
gS=2U
thtime drain-source electric current, work as I
d* R
4during>=0.5V, triode V2 opens and controls U
gS, the operating state of metal-oxide-semiconductor V1 is transformed between variable resistor district and constant current district, thereby realizes electric current I
dinhibition and defencive function.
The present invention compared with prior art tool has the following advantages:
(1) Inrush current restraining function repeatedly: as shown in Figure 3, when a bus electrifying startup, capacitor C 1 instantaneous short-circuit, makes the gate source voltage U of metal-oxide-semiconductor V1 to the circuit that prior art is applied to negative wire
gSequal 0V, when C1 charges, the gate source voltage U of metal-oxide-semiconductor V1
gSfrom 0V, be increased to the partial pressure value of resistance R 1 and resistance R 3, thereby open metal-oxide-semiconductor V1, in this process, realize the function of Inrush current restraining, after capacitor C 1 has been charged, Inrush current restraining disabler; The present invention, as shown in Fig. 1 or 2, utilizes the drain-source electric current I of resistance R 4 sampling metal-oxide-semiconductor V1
dcontrol the conducting of triode V2, make the working region of metal-oxide-semiconductor V1 enter constant current district from variable resistor district, thereby surge current is remained to steady state value, after surge current disappears, variable resistor district is returned to from constant current district in the working region of metal-oxide-semiconductor V1, and the above course of work can repeat with the appearing and subsiding of surge current, therefore can realize repeatedly Inrush current restraining function.
(2) can recover to input overcurrent protection function: when short trouble appears in load, utilize the drain-source electric current I of resistance R 4 sampling metal-oxide-semiconductor V1
dcontrol the conducting of triode V2; make the working region of metal-oxide-semiconductor V1 enter constant current district from variable resistor district; input current can be restricted to steady state value; realize input overcurrent protection; after short trouble is excluded, variable resistor district is returned to from constant current district in the working region of metal-oxide-semiconductor V1, and circuit can recover rapidly normal operating conditions.
(3) constant current defencive function: the drain-source electric current I of utilizing resistance R 4 sampling metal-oxide-semiconductor V1
d, control the conducting of triode V2, make the working region of metal-oxide-semiconductor V1 enter constant current district from variable resistor district, so surge current is restricted to steady state value, and after circuit parameter is fixed, this current value can not change with the variation of input voltage.
Accompanying drawing explanation
Fig. 1 is circuit diagram 1 of the present invention;
Fig. 2 is circuit diagram 2 of the present invention;
Fig. 3 is prior art circuits Fig. 3;
Fig. 4 is Inrush current restraining oscillogram first;
Fig. 5 is that overcurrent protection electric current suppresses oscillogram;
Fig. 6 is Surge suppression oscillogram repeatedly;
Embodiment
Below just by reference to the accompanying drawings the present invention is described further.
As shown in Figure 1, 2, the present invention proposes a kind of have can flow recovery defencive function surge current suppression circuit module, wherein, Fig. 1 is circuit module circuit diagram during for negative wire, Fig. 2 is circuit module circuit diagram during for main track.The device of circuit comprises: resistance R 1, R2, R3, R4, R5, metal-oxide-semiconductor V1, triode V2 and voltage stabilizing didoe V3.Concrete connection is as shown in Fig. 1 or 2.Metal-oxide-semiconductor V in figure
1pin definitions be: G-grid, D-drain electrode, S-source electrode; Triode V
2pin definitions be: b-base stage, c-collector electrode, e-emitter.
When being connected in negative wire, described metal-oxide-semiconductor V1 adopts NMOS pipe, and described triode V2 adopts NPN triode.The collector electrode of described triode V2 is connected with the negative electrode of voltage stabilizing didoe V3; The emitter of described triode V2 is connected with the anode of voltage stabilizing didoe V3 with one end of resistance R 4; The base stage of described triode V2 is connected with the other end of resistance R 4 and the source electrode of metal-oxide-semiconductor V1 by resistance R 5;
When being connected in main track, described metal-oxide-semiconductor V1 adopts PMOS pipe, and described triode V2 adopts PNP triode; The collector electrode of described triode V2 is connected with the anode of voltage stabilizing didoe V3; The emitter of described triode V2 is connected with the negative electrode of voltage stabilizing didoe V3 with one end of resistance R 4; The base stage of described triode V2 is connected with the other end of resistance R 4 and the source electrode of metal-oxide-semiconductor V1 by resistance R 5.
On a bus, during electric-opening, suppose that load does not start, input voltage, through described resistance R 1 and R3 dividing potential drop, makes U
gS>=2U
thtime, metal-oxide-semiconductor V1 opens and is operated in constant current district, the electric current I that now drain-source of metal-oxide-semiconductor V1 can be passed through
dshown in following formula,
Wherein, U
gSgate source voltage for metal-oxide-semiconductor V1; U
thcut-in voltage for metal-oxide-semiconductor V1; I
dOfor working as U
gS=2U
thtime drain-source electric current.
When load starts as shown in Figure 4, the electric capacity instantaneous short-circuit between its positive negative wire, now will produce larger surge current on a bus, and the drain-source of metal-oxide-semiconductor V1 flows through larger electric current I
d, work as I
d* R
4during>=0.5V, triode V2 conducting, makes U
gSbe reduced to the tube voltage drop U of triode V2
ce, according to formula
according to knowing, I
dfor steady state value, metal-oxide-semiconductor V1 is operated in constant current district; After capacitor charging completes, surge current disappears, and circuit recovers normal operating conditions, and metal-oxide-semiconductor V1 is operated in variable resistor district.
When short trouble appears in load as shown in Figure 5, on a bus, will produce larger electric current, the drain-source of metal-oxide-semiconductor V1 flows through larger electric current I
d, work as I
d* R
4during>=0.5V, triode V2 conducting, makes U
gSbe reduced to the tube voltage drop U of triode V2
ce, according to formula
according to knowing, I
dfor steady state value, metal-oxide-semiconductor V1 is operated in constant current district; After short trouble is got rid of, overcurrent disappears, and circuit recovers normal operating conditions, and metal-oxide-semiconductor V1 is operated in variable resistor district.
When having a plurality of load intervals to start, on a bus, will constantly produce larger electric current as shown in Figure 6, the drain-source of metal-oxide-semiconductor V1 constantly flows through larger electric current I
d, work as I at every turn
d* R
4during>=0.5V, triode V2 conducting, makes U
gSbe reduced to the tube voltage drop U of triode V2
ce, according to formula
according to knowing, I
dto be all steady state value, metal-oxide-semiconductor V1 be operated in constant current district; After a plurality of loads have started respectively, circuit recovers normal operating conditions, and metal-oxide-semiconductor V1 is operated in variable resistor district.
Embodiment
In circuit of the present invention, the concrete model of device is as follows, can suppress scope and protect to require to adjust according to concrete bus voltage value, electric current, while being applied to negative wire:
Bus supply voltage a :+28V
R1：RMK3216-1/4W-30KΩ
R2：RMK3216-1/4W-100Ω
R3：RMK3216-1/4W-10KΩ
R4：RX21-4W-0.35Ω
R5：RMK3216-1/4W-100Ω
V1：IRHNJ67230SCV(IRF5NJ3315)
V2：3DG111F
V3：ZW60
While being applied to main track:
Bus supply voltage a :+28V
R1：RMK3216-1/4W-30KΩ
R2：RMK3216-1/4W-100Ω
R3：RMK3216-1/4W-10KΩ
R4：RX21-4W-0.35Ω
R5：RMK3216-1/4W-100Ω
V1：IRHNJ9130(IRF5NJ9540)
V2：3CG111C
V3：ZW60
The unspecified part of the present invention belongs to general knowledge as well known to those skilled in the art.
Claims (2)
- One kind have can flow recovery defencive function surge current suppression circuit module, between bus and load end, comprise the circuit module being formed by resistance R 1, R2, R3, R4, R5, metal-oxide-semiconductor V1, triode V2 and voltage stabilizing didoe V3, wherein, after resistance R 1, resistance R 2 and metal-oxide-semiconductor V1 series connection, be parallel between positive and negative busbar, when described circuit module is used for negative wire, after being connected with the negative electrode of voltage stabilizing didoe V3, one end of described resistance R 3 is connected with the series connection end of resistance R 1 and resistance R 2; The other end of described resistance R 3 is connected with negative wire with the anode of voltage stabilizing didoe V3 and one end of resistance R 4; When described circuit module is used for main track, after being connected with the anode of voltage stabilizing didoe V3, one end of described resistance R 3 is connected with the series connection end of resistance R 1 and resistance R 2; The other end of described resistance R 3 is connected with main track with the negative electrode of voltage stabilizing didoe V3 and one end of resistance R 4; It is characterized in that:When described circuit module is used for negative wire, described metal-oxide-semiconductor V1 adopts N-channel MOS pipe, and described triode V2 adopts NPN triode; The collector electrode of described triode V2 is connected with the negative electrode of voltage stabilizing didoe V3; The emitter of described triode V2 is connected with the anode of voltage stabilizing didoe V3 with one end of resistance R 4; The base stage of described triode V2 is connected with the other end of resistance R 4 and the source electrode of metal-oxide-semiconductor V1 by resistance R 5;When described circuit module is used for main track, described metal-oxide-semiconductor V1 adopts P channel MOS tube, and described triode V2 adopts PNP triode; The collector electrode of described triode V2 is connected with the anode of voltage stabilizing didoe V3; The emitter of described triode V2 is connected with the negative electrode of voltage stabilizing didoe V3 with one end of resistance R 4; The base stage of described triode V2 is connected with the other end of resistance R 4 and the source electrode of metal-oxide-semiconductor V1 by resistance R 5.
- As claimed in claim 1 a kind of have can flow recovery defencive function surge current suppression circuit module, it is characterized in that: on bus after electric-opening, the electric current I that the drain-source of metal-oxide-semiconductor V1 can be passed through dshown in following formula,Wherein, U gSgate source voltage for metal-oxide-semiconductor V1; U thcut-in voltage for metal-oxide-semiconductor V1; I dOfor working as U gS=2U thtime drain-source electric current, work as I d* R 4during>=0.5V, triode V2 opens and controls U gS, the operating state of metal-oxide-semiconductor V1 is transformed between variable resistor district and constant current district, thereby realizes electric current I dinhibition and defencive function.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110430595.0A CN102437560B (en) | 2011-12-20 | 2011-12-20 | Surge current suppression circuit module with recoverable over-current protection function |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110430595.0A CN102437560B (en) | 2011-12-20 | 2011-12-20 | Surge current suppression circuit module with recoverable over-current protection function |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102437560A CN102437560A (en) | 2012-05-02 |
| CN102437560B true CN102437560B (en) | 2014-02-19 |
Family
ID=45985481
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110430595.0A Active CN102437560B (en) | 2011-12-20 | 2011-12-20 | Surge current suppression circuit module with recoverable over-current protection function |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102437560B (en) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104242277B (en) * | 2013-06-21 | 2018-03-23 | 中国科学院微电子研究所 | A kind of device to loading or exporting progress current-limiting protection |
| CN103595016A (en) * | 2013-11-22 | 2014-02-19 | 郑州光力科技股份有限公司 | Current-limiting protection circuit |
| CN104682331A (en) * | 2013-11-26 | 2015-06-03 | 上海博泰悦臻电子设备制造有限公司 | Power supply short circuit protection circuit |
| CN105139628B (en) * | 2015-08-19 | 2019-02-15 | 积成电子股份有限公司 | A kind of MBUS circuit for host side |
| CN105634263A (en) * | 2016-04-12 | 2016-06-01 | 上海斐讯数据通信技术有限公司 | Protection circuit self-adaptive to input voltage |
| CN107947557B (en) * | 2017-12-05 | 2023-07-04 | 合肥华耀电子工业有限公司 | Soft start circuit for resisting overvoltage and undervoltage surges |
| CN108923399A (en) * | 2018-07-02 | 2018-11-30 | 山东航天电子技术研究所 | A kind of recoverable constant current type surge restraint circuit |
| DE102018127621A1 (en) * | 2018-11-06 | 2020-05-07 | HELLA GmbH & Co. KGaA | Circuit arrangement for limiting an inrush current |
| CN109510449A (en) * | 2018-11-19 | 2019-03-22 | 天津津航计算技术研究所 | A kind of inrush current suppression circuit |
| CN110739660B (en) * | 2019-09-23 | 2021-10-01 | 上海空间电源研究所 | Protection circuit for satellite load |
| CN111446706B (en) * | 2020-04-14 | 2022-11-08 | 合肥联宝信息技术有限公司 | Power supply protection method and device |
| CN112310950A (en) * | 2020-10-21 | 2021-02-02 | 中国科学院长春光学精密机械与物理研究所 | Surge suppression circuit and aerospace equipment |
| CN114006362B (en) * | 2021-11-12 | 2023-06-02 | 中国电子科技集团公司第二十九研究所 | Input surge current suppression circuit and method for capacitor |
| CN114243665B (en) * | 2021-12-09 | 2023-05-09 | 中国电子科技集团公司第二十九研究所 | Current detection type current surge suppression circuit based on feedback and feedforward |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4090227A (en) * | 1977-03-29 | 1978-05-16 | Bell Telephone Laboratories, Incorporated | Transient-protected signal distribution circuit |
| US4835649A (en) * | 1987-12-14 | 1989-05-30 | United Technologies Corporation | Self-latching current limiter |
| CN101179185A (en) * | 2006-11-06 | 2008-05-14 | 青岛海信电器股份有限公司 | USB interface short-circuit protection circuit and power supply with USB interface short-circuit protection function |
| CN201378731Y (en) * | 2009-03-20 | 2010-01-06 | 长沙威胜信息技术有限公司 | Overvoltage suppressing and self-recovery circuit |
| CN102201664A (en) * | 2010-03-25 | 2011-09-28 | 鸿富锦精密工业（深圳）有限公司 | Voltage-stabilizing circuit system |
-
2011
- 2011-12-20 CN CN201110430595.0A patent/CN102437560B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4090227A (en) * | 1977-03-29 | 1978-05-16 | Bell Telephone Laboratories, Incorporated | Transient-protected signal distribution circuit |
| US4835649A (en) * | 1987-12-14 | 1989-05-30 | United Technologies Corporation | Self-latching current limiter |
| CN101179185A (en) * | 2006-11-06 | 2008-05-14 | 青岛海信电器股份有限公司 | USB interface short-circuit protection circuit and power supply with USB interface short-circuit protection function |
| CN201378731Y (en) * | 2009-03-20 | 2010-01-06 | 长沙威胜信息技术有限公司 | Overvoltage suppressing and self-recovery circuit |
| CN102201664A (en) * | 2010-03-25 | 2011-09-28 | 鸿富锦精密工业（深圳）有限公司 | Voltage-stabilizing circuit system |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102437560A (en) | 2012-05-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102437560B (en) | Surge current suppression circuit module with recoverable over-current protection function | |
| KR101855793B1 (en) | Charging apparatus for electronic device and power adapter for electronic device | |
| US9030794B2 (en) | Electronic fuse apparatus and method of operating the same | |
| US8350408B2 (en) | Power management circuit | |
| US20140210612A1 (en) | Protection ic and method of monitoring a battery voltage | |
| CN101432945B (en) | Gate driver for a battery pack | |
| US9425612B2 (en) | Output power protection apparatus and method of operating the same | |
| JP6530586B2 (en) | Secondary protection IC, control method for secondary protection IC, protection module, and battery pack | |
| US20120187934A1 (en) | Dc-dc converter | |
| US20150035369A1 (en) | Charging control circuit, method and electronic device thereof | |
| JP2006340450A (en) | Battery protective circuit | |
| US20140346864A1 (en) | Device for maintaining voltage during startup for a motor vehicle | |
| CN113328734A (en) | Fast blocking switch | |
| CN106602532B (en) | Current-limiting circuit and its driving method, PMIC protection system and display apparatus protecting system | |
| CN109196751B (en) | Charging device and terminal | |
| CN102629758B (en) | Voltage comparator-based drop gate voltage circuit | |
| CN102612209B (en) | Recoverable protective circuit of boosting LED (light emitting diode) driving power supply and design method of recoverable protective circuit | |
| CN113328414A (en) | Short-circuit protection circuit | |
| US9000624B2 (en) | Power-good signal generator and controller with power sequencing free | |
| CN108963999B (en) | Surge current suppressor | |
| CN112181037A (en) | Multi-path power supply current equalizing circuit and control method | |
| US20170271975A1 (en) | Temporary energy storage for voltage supply interruptions | |
| CN201563058U (en) | Direct-current voltage-stabilizing supply unit | |
| JP5031491B2 (en) | Abnormality detection circuit for switching power supply circuit | |
| CN115800189B (en) | On-chip overcurrent protection circuit and protection method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |