CN102442786A - Manufacturing method of semiconductor titanium crystal energy-saving chip - Google Patents
Manufacturing method of semiconductor titanium crystal energy-saving chip Download PDFInfo
- Publication number
- CN102442786A CN102442786A CN2010105094774A CN201010509477A CN102442786A CN 102442786 A CN102442786 A CN 102442786A CN 2010105094774 A CN2010105094774 A CN 2010105094774A CN 201010509477 A CN201010509477 A CN 201010509477A CN 102442786 A CN102442786 A CN 102442786A
- Authority
- CN
- China
- Prior art keywords
- crystal glass
- titanium crystal
- titanium
- energy
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Materials For Medical Uses (AREA)
- Prostheses (AREA)
Abstract
A manufacturing method of a semiconductor titanium crystal energy-saving chip is provided, comprising the steps of a preparing process, a cleaning process, a coating process and a cutting finishing process, wherein the preparing process is as follows: preparing titanium crystal glass capable of producing far-infrared ray; the cleaning process is as follows: cleaning the titanium crystal glass by ultrasonic wave and drying the titanium crystal glass; the coating process is as follows: putting the titanium crystal glass to a vacuum chamber and enabling surface capillary holes of the titanium crystal glass at 300-750 degrees centigrade to expand in order to implant an oxidized metal group with a titanium crystal impedance of 2500-3500 microns and a wavelength of 50-70 nm; cooling the vacuum chamber to 0-10 degrees to enable the surface of the titanium crystal glass to shrink so as to form the oxidized metal group in the surface of the titanium crystal glass, thus forming one circulation; repeating the circulation several times till satisfying the needed specification, namely, manufacturing the semiconductor titanium crystal energy-saving chip; and cutting the chip to be needed size by the cutting finishing process.
Description
Technical field
The present invention relates to the brilliant energy-conservation chip of semi-conductor titanium, relate in particular to the method for manufacture of the brilliant energy-conservation chip of a kind of semi-conductor titanium.
Background technology
Oil is one of limited important energy source of the earth, and fuel oils such as the gasoline that it extract, diesel oil are the necessary fuel of vehicle engine; Reach the purpose that subtracts carbon for the utilization of saving the energy; And reduce the use cost of the vehicles, how to promote the fuel oil utilising efficiency of vehicle engine, with minimum fuel oil; The benefit that performance is maximum, the usage quantity that reduces fuel oil is considerable problem.
The known efficiency of combustion that will promote engine, the existing fuel-efficient part that adopts far-infrared ray material to process, this fuel-efficient part add and hang on the outer oil pipe of engine; To be small molecules by the far infrared rays cutting fuel oil that fuel-efficient part was discharged, it can improve efficiency of combustion, and reaches fuel-efficient effect; But the known material that can produce far infrared rays that adopts, the far infrared rays amount that it discharges is limited and wavelength is shorter, thereby can only act on the surface of fuel oil; Can't deeply penetrate the inside of fuel oil; Causing its cutting fuel oil is that micromolecular effect is limited, and raising fuel efficiency that can't be real is difficult to satisfy the demand of user's carbon reduction cost-saving.
Summary of the invention
Main purpose of the present invention is to provide the method for manufacture of the brilliant energy-conservation chip of semiconductor titanium, and it can produce the strong far infrared rays wavelength of penetration power and come tinyization of cutting oil molecule, definitely to reach the purpose of carbon reduction.
To achieve these goals, the present invention is the method for manufacture of the brilliant energy-conservation chip of a kind of semi-conductor titanium, and its step comprises a preparation program, a wash procedure and a plated film program, and wherein, this set up procedure can produce the titanium crystal glass of far infrared rays for preparation one; This wash procedure is for to clean up this titanium crystal glass and dry with ultrasound; This plated film program is in the vacuum cavity of vacuum for this titanium crystal glass is inserted one; And make the surperficial pore expansion of this titanium crystal glass belong to the crowd at the gold monoxide of 2500-3500 micron wave length and 50-70 nanometer thickness on this titanium crystal glass, to implant impedance with the temperature of 300-750 degree Celsius; And in the vacuum cavity that is vacuum, cool the temperature to-10 degree Celsius and make its surface compressed of this titanium crystal glass that this oxidized metal crowd is formed in the top layer of this titanium crystal glass to accomplishing a circulation; And repeat this circulation repeatedly, promptly accomplish the making of the brilliant energy-conservation chip of this semi-conductor titanium.
The further improved plan according to the present invention also comprises a cutting completion program, and this cutting completion program cuts into required size for the titanium crystal glass that will be coated with the oxidized metal crowd.
The further improved plan according to the present invention, the circulation that repeats this plated film program is between 30-50 time.
The further improved plan according to the present invention, this oxidized metal crowd is a silver suboxide.
The further improved plan according to the present invention, this oxidized metal crowd is a White tin oxide.
The further improved plan according to the present invention, this oxidized metal crowd is an aluminum oxide.
The further improved plan according to the present invention, this titanium crystal glass forms through adding thermal crystalline for utilizing a titanium metal to implant glass.
In view of the above; The present invention utilizes titanium oxide in the time of heat, to implant glass and forms the titanium crystal glass; Thereby the titanium oxide material that this titanium crystal glass can be implanted by heating back comes releasing far infrared wavelength, and tool discharges the ability of light-wave energy, again on this titanium crystal glass in the pyritous vacuum environment sputter last layer oxidized metal crowd again; Make this titanium crystal glass and oxidized metal crowd produce key knot and produce far infrared rays long wave frequency and reach light-wave energy and oil molecule is cut; Can deeply penetrate oil plant inside and make oily tinyization of molecule, and then make oil plant perfect combustion promoting engine efficiency, after the oil plant perfect combustion with regard to non-exhaust emission; Engine does not also have carbon distribution, and reaches the purpose of carbon reduction.
Description of drawings
Fig. 1 is a manufacturing flow chart one of the present invention;
Fig. 2 is a structural representation of the present invention;
Fig. 3 is a manufacturing flow chart two of the present invention;
Fig. 4 is inserted in microscler protective sleeve synoptic diagram for the present invention; And
Another is inserted in square protective sleeve synoptic diagram to Fig. 5 for the present invention.
Embodiment
Relevant detailed content of the present invention and technical specification are described further with embodiment, but will be appreciated that these embodiment are merely the usefulness of example description at present, and should not be interpreted as the restriction that the present invention implements.
See also Fig. 1 and shown in Figure 2; It is embodiments of the invention one; The present invention is the method for manufacture of the brilliant energy-conservation chip of a kind of semi-conductor titanium; Its step comprises a preparation program 10, a wash procedure 20 and a plated film program 30, wherein, this set up procedure 10 for prepare one can produce far infrared rays titanium crystal glass 50; This titanium crystal glass 50 can utilize titanium monoxide (not shown) to implant glass and form through adding thermal crystalline, and it forms this titanium crystal glass 50 for making this titanium oxide be heated to glass transition temperature and cool off with crystallization fast.
And this wash procedure 20 is for to clean up this titanium crystal glass 50 and dry with ultrasound, and its purpose is to remove the impurity and the grease on these titanium crystal glass 50 surfaces, is beneficial to the carrying out of subsequent technique.
This plated film program 30 is in the vacuum cavity (not shown) of vacuum for this titanium crystal glass 50 is inserted one again; And make the surperficial pore expansion of this titanium crystal glass 50 with the temperature of 300-750 degree Celsius; Belong to crowd 60 on this titanium crystal glass, to implant the brilliant impedance of titanium at the gold monoxide of 2500-3500 micron wave length and 50-70 nanometer thickness; This oxidized metal crowd 60 can be selected from silver suboxide, White tin oxide or aluminum oxide etc.; And its plated film mode can be selected from common surface coating technology such as sputter, vapor deposition; And in the vacuum cavity that is vacuum, cool the temperature to-10 degree Celsius, and make its surface compressed of this titanium crystal glass 50, this oxidized metal crowd 60 is formed in the top layer of this titanium crystal glass 50 is completion one circulation.The present invention repeats this circulation repeatedly, though also this titanium crystal glass 50 continuously in the cryogenic circulation of high temperature in layer plate this oxidized metal crowd 60, promptly accomplish the making of the brilliant energy-conservation chip of this semi-conductor titanium; And for reaching preferable effect, the present invention reaches 30-50 time for carrying out the high temperature cold cycle, and 2000 microns technology is plated film 30 times then; 2500 microns technology is plated film 35 times then; 3000 microns technology is plated film 40 times then, and 3500 microns technology is plated film 50 times then, and different processes is arranged on demand; Definitely can produce far infrared rays wavelength and semi-conductor impedance radiation wavelength
See also Fig. 3 and shown in Figure 4; It is embodiments of the invention two; The present invention more can comprise a cutting completion program 40; This cutting completion program 40 cuts into the titanium crystal glass 50A of required size and inserts a microscler protective sleeve 70 for the titanium crystal glass 50 (i.e. the brilliant energy-conservation chip of this semi-conductor titanium) that will be coated with this oxidized metal crowd 60; The soft materials that this microscler protective sleeve 70 is a rubber is made, and it can be damaged in order to protect this titanium crystal glass 50A to avoid the external force collision, and the size of this cutting can use required size to select according to reality; As will the titanium crystal glass 50A that be coated with this oxidized metal crowd 60 directly be lost in the fuel tank and directly contact with oil plant, then need its width be cut to can be required to satisfy through reservoir port (not shown) or service ports (not shown).
Please consult shown in Figure 5 again; It is the square protective sleeve 80 of another shape; This square protective sleeve 80 respectively is provided with a protection flange 81 in four corners, and is provided with a protection projection 82 in the center, and this square protective sleeve 80 can wear the titanium crystal glass 50B of another correspondingly-sized; And, damage because of bump to avoid this titanium crystal glass 50B through this protection flange 81 and this protection projection 82 this titanium crystal glass of protection 50B.
As stated; The present invention utilizes titanium oxide in the time of heat, to implant glass and forms titanium crystal glass 50, thereby the titanium oxide material that this titanium crystal glass 50 can be implanted by the heating back comes releasing far infrared wavelength, and tool discharges the ability of light-wave energy; Again on this titanium crystal glass 50 in the pyritous vacuum environment sputter last layer oxidized metal crowd 60 material crowd again; Oxidized metal crowd 60 can be silver suboxide, White tin oxide or aluminum oxide etc., and generation far infrared rays long wave frequency reaches light-wave energy and with the oil molecule cutting, make oily tinyization of molecule with oxidized metal crowd 60 generation key knots to make this titanium crystal glass 50; And then make oil plant perfect combustion to promote engine efficiency; With regard to non-exhaust emission, engine does not also have carbon distribution after the oil plant perfect combustion, and reaches the purpose of carbon reduction.
Claims (7)
1. the method for manufacture of the brilliant energy-conservation chip of semi-conductor titanium is characterized in that, comprises following steps:
One preparation program (10), said set up procedure (10) can produce the titanium crystal glass of far infrared rays for preparation one;
One wash procedure (20), said wash procedure (20) is for to clean up said titanium crystal glass and dry with ultrasound; And
One plated film program (30); Said plated film program (30) is in the vacuum cavity of vacuum for said titanium crystal glass is inserted one; And make the surperficial pore expansion of said titanium crystal glass with the temperature of 300-750 degree Celsius; On said titanium crystal glass, implanting the oxidized metal crowd (60) of impedance, and in the vacuum cavity that is vacuum, cool the temperature to-10 degree Celsius, make its surface compressed of said titanium crystal glass in 2500-3500 micron wave length and 50-70 nanometer thickness; Make said oxidized metal crowd (60) thus be formed in the top layer of said titanium crystal glass and accomplish a circulation, and repeat this circulation.
2. the method for manufacture of the brilliant energy-conservation chip of semi-conductor titanium according to claim 1 is characterized in that, also comprises a cutting completion program (40), and said cutting is accomplished program (40) and cut into required size for the titanium crystal glass that will be coated with said oxidized metal crowd (60).
3. the method for manufacture of the brilliant energy-conservation chip of semi-conductor titanium according to claim 1 is characterized in that the circulation that repeats said plated film program (30) is between 30-50 time.
4. the method for manufacture of the energy-conservation chip of semi-conductor according to claim 1 is characterized in that, said oxidized metal crowd (60) is a silver suboxide.
5. the method for manufacture of the energy-conservation chip of semi-conductor according to claim 1 is characterized in that, said oxidized metal crowd (60) is a White tin oxide.
6. the method for manufacture of the energy-conservation chip of semi-conductor according to claim 1 is characterized in that, said oxidized metal crowd (60) is an aluminum oxide.
7. the method for manufacture of the energy-conservation chip of semi-conductor according to claim 1 is characterized in that, said titanium crystal glass forms through adding thermal crystalline for utilizing a titanium metal to implant glass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105094774A CN102442786A (en) | 2010-10-08 | 2010-10-08 | Manufacturing method of semiconductor titanium crystal energy-saving chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010105094774A CN102442786A (en) | 2010-10-08 | 2010-10-08 | Manufacturing method of semiconductor titanium crystal energy-saving chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102442786A true CN102442786A (en) | 2012-05-09 |
Family
ID=46005777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010105094774A Pending CN102442786A (en) | 2010-10-08 | 2010-10-08 | Manufacturing method of semiconductor titanium crystal energy-saving chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102442786A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5044346A (en) * | 1989-02-06 | 1991-09-03 | Hideyo Tada | Fuel activation method and fuel activation device |
| US5080080A (en) * | 1990-07-26 | 1992-01-14 | Kynetik Marketing, Inc. | Method and apparatus to improve fuel economy of internal combustion engines |
| CN2934619Y (en) * | 2006-06-23 | 2007-08-15 | 上田健康商品有限公司 | Environment-friendly nano chip energy saver |
| CN201096036Y (en) * | 2007-11-16 | 2008-08-06 | 林振隆 | Semiconductor titanium crystal environmental protection energy-saving device |
| US20090188474A1 (en) * | 2008-01-30 | 2009-07-30 | Edward I-Hua Chen | Fuel-saving apparatus |
| WO2010002050A1 (en) * | 2008-07-04 | 2010-01-07 | Tae-Kyu Moon | Fuel saver composition using propolis and em ceramic and fuel saver apparatus using it |
-
2010
- 2010-10-08 CN CN2010105094774A patent/CN102442786A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5044346A (en) * | 1989-02-06 | 1991-09-03 | Hideyo Tada | Fuel activation method and fuel activation device |
| US5080080A (en) * | 1990-07-26 | 1992-01-14 | Kynetik Marketing, Inc. | Method and apparatus to improve fuel economy of internal combustion engines |
| CN2934619Y (en) * | 2006-06-23 | 2007-08-15 | 上田健康商品有限公司 | Environment-friendly nano chip energy saver |
| CN201096036Y (en) * | 2007-11-16 | 2008-08-06 | 林振隆 | Semiconductor titanium crystal environmental protection energy-saving device |
| US20090188474A1 (en) * | 2008-01-30 | 2009-07-30 | Edward I-Hua Chen | Fuel-saving apparatus |
| WO2010002050A1 (en) * | 2008-07-04 | 2010-01-07 | Tae-Kyu Moon | Fuel saver composition using propolis and em ceramic and fuel saver apparatus using it |
Non-Patent Citations (1)
| Title |
|---|
| H.K.普尔克尔著，仲永安等译: "《镀膜玻璃》", 31 May 1985, 科学出版社 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201226636Y (en) | Liquid cooling radiating device with evaporation cavity | |
| CN105841535A (en) | Sectional composite-structure panel heat transfer tube and manufacture method thereof | |
| CN104607808B (en) | Utilize femtosecond laser to carry out the method for ceramic matric composite capillary processing | |
| CN104964487B (en) | The processing method of heat exchanger, air conditioner and metal foil | |
| CN102625955B (en) | The silicon substrate of the method for veining surface of silicon and the veining for solar cell | |
| CN105355693B (en) | A kind of PERC solar-energy photo-voltaic cells for improving photoelectric transformation efficiency | |
| CN104076530B (en) | 1-D photon crystal selective radiator | |
| CN105826434B (en) | A kind of production method of diamond heat-sink GaN base LED | |
| CN103266295B (en) | A kind of thermal barrier coating by laser surface modifying method | |
| CN103456837A (en) | Method for manufacturing solar cell with local back surface field passivation | |
| CN110243213A (en) | A kind of the plate liquid-sucking core and its manufacturing method of composite construction | |
| CN104300032A (en) | Single crystal silicon solar ion implantation technology | |
| CN103021821B (en) | The method for annealing of the semiconductor structure being positioned in flexible substrate | |
| CN102709163A (en) | Wool preparing process by crystalline silicon based on laser interference induced reaction | |
| CN102244136A (en) | Method for preparing interdigital back contact double-sided solar cell | |
| CN102442786A (en) | Manufacturing method of semiconductor titanium crystal energy-saving chip | |
| CN110081749A (en) | Aluminium base ultrathin heat pipe and preparation method with super-hydrophobic-super hydrophilic structure | |
| CN104410329A (en) | High efficient thermoelectric power generation device using radiant heat | |
| CN102947954B (en) | Solaode and manufacture method thereof with dielectric back reflection coating | |
| CN208904088U (en) | A kind of battery modules and its carrying shell | |
| CN203586895U (en) | Vapor chamber evaporating and liquid-absorbing core with stepped groove-hole structure | |
| CN206504651U (en) | A kind of heat-pipe radiator | |
| CN206772103U (en) | A kind of fine and soft shape wing fiber composite plough groove type abnormity heat pipe | |
| CN107919413A (en) | A kind of GaN base LED is to diamond heat-sink transfer method | |
| TWI488320B (en) | Surface coating structure and production method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120509 |
|
| WD01 | Invention patent application deemed withdrawn after publication |