CN102473793B - 制造光电元件的系统和方法 - Google Patents
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Abstract
一种制造光电元件的方法包括下列步骤:采用连铸工艺同时形成第一N型材料层和第二P型材料层,并且连续接合第一及第二层,形成P-N结。所述方法可以利用具有连铸模的双辊连铸系统来实现,所述连铸模包括用来接收熔融的N型材料的第一模腔以及用来接收熔融的P型材料的第二模腔。所述熔融的N型材料和熔融的P型材料逐步凝固为半固态片并由对置的铸轧辊轧压在一起,形成N型材料及P型材料件的冶金结合,从而形成有效的P-N结。所述方法能够大批量地高效生产光电元件。
Description
技术领域
本发明总体上涉及可再生能源领域,更具体地说,本发明涉及制造光电池及其组件的系统和方法。
背景技术
采用硅基光电池将光转化为电能距今已有近七十年的历史。1946年6月25日授权的美国专利US2402662(申请日:1941年5月27日)描述了一种由两段相同的硅锭制成的装置,其中一段硅锭是柱状结构,另一段硅锭是非柱状结构,两段硅锭熔接形成“感光电气装置”。1954年,贝尔实验室进一步发现在硅锭段中掺入如硼、磷等不同的杂质,并将其相互熔接,可使装置的感光性更高。
用于制造光电(PV)电池或太阳能产业中通常所称的太阳能电池的最常用材料是准金属“硅”,硅在宇宙中的储量排在第八位,它是地壳中第二丰富的元素(仅次于氧),构成地壳总质量的25.7%。
制造硅基太阳能光电池最常见的方法是:将晶硅锭或晶硅棒切成薄片。一个硅棒含有微量硼或其它的第三族受体作为杂质,成为P型(正电型)材料,另一个硅棒含有微量磷或其它的第五族施体作为杂质,成为N型(负电型)材料。将每个硅棒的薄片熔接并对其作进一步处理,所形成的半导体装置被称作光电池。
常规的PV电池的制造过程非常繁复,具有多个步骤,例如将硅棒锯成片状、研磨薄片表面、腐蚀薄片表面、将其熔接等等。硅片的实际尺寸受限于硅棒的尺寸,长期以来已经从25.4毫米(1英寸)发展为300毫米(11.8英寸)。当今,人们正致力于将硅片尺寸从300毫米增至450毫米(17.7英寸)。
在1987年4月28日授权的美国专利US4661200中首先介绍出一种更新的制造硅基太阳能PV电池的方法,其名称是“晶线稳定硅带生长”,随后,1987年8月25日授权的美国专利US4689109介绍一种引发或引晶晶硅带或多晶硅带生长的方法。该方法是牵引两条晶线或晶丝通过硅熔体的浅坩埚,如同牵引铸件壁通过皂液一样,硅熔体填满二者之间的空隙,从而形成薄“硅带”。该方法省略了将固体硅锭或硅棒切成硅片的步骤,继而使在切割过程中产生的巨大硅材料损耗降低45%。
线带硅片工艺可高效地生产太阳能电池,并可节省大量的时间和材料。其重要性在于降低太阳能成本,从而使其与大规模生产电力现有的以碳为基础的方法相比更具成本竞争力。但是,在两条晶线中固化硅带的生产规模显然具有局限性,这阻碍了太阳能产业不再仅仅作为一种替代能源,而是成为当今世界主要能源的飞跃性进展。
制造钢板或铝板的连铸工艺通常采用双辊铸轧(有时也称为鼓铸)。这种概念最初在1865年7月25日申请的美国专利US49053中提出,其专利名称为“钢铁制造中的改进”。但直到二十一世纪,计算机控制系统能够准确配比液态金属池的入料率和旋转鼓的转速,这种技术的潜力才得到充分发挥。如双辊铸轧等连铸方法可高效生产大量较薄的金属材料。
凯勒等人在美国专利US4108714中公开了由流经互相隔开的辊的辊距中的熔融硅液来制造用于生产太阳能电池的宽带硅片材料。但是,采用这种方法制造太阳能电池须对两片这种材料进行一些额外的加工步骤,其中包括涂覆薄片、研磨薄片表面、腐蚀薄片表面以及将其熔接,用来产生所需的P-N结。
这就需要一种能够大批量制造具有P-N结的光电元件的系统和方法,该方法比现有技术更更具成本效益。
发明内容
因此,本发明的目的在于提供一种能够大批量制造具有P-N结的光电元件的方法,该方法比现有技术更具成本效益。
本发明的一个实施方案的另一目的在于提供一种更节约成本的制造硅基太阳能光电池的方法,该方法是通过连续浇铸大片硅片并使其穿过两个相对反向旋转的铸轧辊间的狭小间隙。
本发明的一个实施方案的再一目的在于使浇注腔在两辊间纵向分隔成两侧,一侧填充P型硅,而另一侧填充N型硅,并在硅片穿出两个相对反向旋转的铸轧辊间的狭小间隙之前就将相对的正在凝固的硅片冶金接合,由此,生产冶金结合的太阳能光电池仅需一个步骤。
为了实现上述目的以及本发明的其他目的,根据本发明的第一个方面,制造光电元件的方法包括:采用连铸工艺同时形成第一N型材料层和第二P型材料层;并且连续接合第一及第二层,形成P-N结。
根据本发明的第二个方面,制造光电元件的方法包括下列步骤:向一连铸模供应熔融的N型材料;向该连铸模供应熔融的P型材料;并且利用该连铸模由熔融的N型材料和熔融的P型材料连续铸造一具有P-N结的光电元件。
本发明的特征在于这些和其他各种优势和新颖性特点,这将在随后的权利要求部分中特别指出。然而,为了更好地理解本发明、优势及其应用中所达到的目标,还应参考另一部分对本发明的优选实施方案进行说明和描的附图及其具体描述。
附图说明
图1是用于制造根据本发明第一个实施方案构造的光电元件系统的图解描述;
图2是如图1所示实施方案中的铸模组件的图解描述;
图3是用于制造根据本发明第二个实施方案构造的光电元件系统的图解描述;
图4是用于制造根据本发明的一个优选实施方案的光电元件系统的图解描述;
图5是用于制造根据本发明第二个实施方案的光电元件系统和方法的图解描述。
具体实施方式
参照附图,所有图示中的同一标号标明对应的结构,特别是参照图1,用于制造光电元件的系统10包括连铸模12、用于向连铸模12供应熔融的N型材料的第一浇口盘14以及用于向连铸模12供应熔融的P型材料的第二浇口盘16。
下面对其进行更详细的描述,特别是参照图2,构建和设置系统10的目的在于通过采用连铸工艺同时形成第一N型材料层50和第二P型材料层52,所述材料层冶金结合,从而连续形成一具有P-N结的光电元件48。
如图1所示,系统10包括竖直导辊架18,该导辊架用于从连铸模12接受光电元件18并将其竖直导向下方。系统10还包括弯辊元件20、弯辊架22和矫直辊架24,它们用于逐步使光电元件48重新定向,使铸件由竖直方向变为水平方向。
水平辊架26将整片的光电元件48导入切割塑形组件28,将其分成小片以便组装成光电池。优选地,系统10在达到水平位置前的曲率半径较大(至少10米)。沿传输路径规律间隔的一系列驱动辊对可用来支撑由连铸模12中输出的光电元件的重量并控制其卸料速度。
参照图2,可以看出连铸模12优选包括第一模腔30和第二模腔32,通过隔板38使第二模腔32与第一模腔30分开。相应地,连铸模12被隔板38纵向分隔。
构建和设置第一模腔30用于容纳从第一浇口盘14接到的熔融的N型材料34,该第一模腔30部分由第一铸轧辊44构成。构建和设置第二模腔32用于容纳从第二浇口盘16接到的熔融的P型材料36,该第二模腔32部分由第二铸轧辊46构成。浇铸喉管37是指在连铸模12下部、两个铸轧辊44,46之间的空隙。
第一铸轧辊44优选采用液冷式,如图2所示,采用以顺时针方向旋转的安装方式。第二铸轧辊同样优选采用液冷式,如图2所示,采用以逆时针方向旋转的安装方式。
优选地,熔融的N型材料34是由掺入如磷(P)、砷(As)或锑(Sb)等已知的N型掺杂添加剂的熔融硅制得。优选地,熔融的P型材料36是由掺入硼(B)、铝(Al)或镓(Ga)等已知的P型添加剂的熔融硅制得。分别可将任何已知的N型或P型掺杂剂用于熔融的N型材料34或熔融的P型材料36。
优选地,将基板硅材料在如电弧炉等熔炉中进行加热,使已经部分净化的硅粒或硅锭变成熔融状态。然后,优选地,将其传送至另一个熔炉中进行最后的提炼及掺杂,然后分别将N型和P型熔融材料34,36输送至系统10中各自的浇包内。在系统10中,分别将N型和P型熔融材料34,36从浇包注入各自的浇口盘14,16,从而浮除耐熔杂质。然后,分别将N型和P型熔融材料34,36从浇口盘14,16注入各自的第一及第二模腔30,32。
隔板38的最底端是锥形尖端,该尖端紧邻浇铸喉管37,在优选的实施方案中,所述隔板具有加热元件42,优选为电阻型加热元件。
在操作中,使用连铸模12连续地将具有P-N结58的光电元件48制成具有N层50和P层52的薄带。第一模腔30中熔融的N型材料通过接触第一铸轧辊44逐步冷却,形成半凝固片54,其厚度随着接近浇铸喉管37而逐渐增加。同时,第二模腔32中熔融的P型材料通过接触第二铸轧辊46逐步冷却,形成半凝固片56,其厚度随着接近浇铸喉管37而逐渐增加。
优选地,通过隔板38的锥形底端40旁的加热器加热各个半凝固片54,56的内表面。然后通过铸轧辊44,46在浇铸喉管37将半凝固片54,56轧压在一起,从而在其内表面间形成连续的冶金结合,形成具有有效P-N结58的一体光电元件48。
在第一及第二层50,52仍处于连铸过程的高温时,进行用来形成P-N结58的所述第一及第二层50,52的连续接合。
通过利用加热器40加热各个层50,52的内表面,在第一及第二层50,52的其中一层的至少一部分是半熔融状态时,进行用来形成P-N结58的所述第一及第二层50,52的连续接合,其中所述半熔融状态有利于形成层50,52间的冶金结合。
通过调节各个铸轧辊44,46所提供的冷却,可调节第一及第二层50,52的各层的厚度。例如,铸轧辊46中循环的冷却剂多于铸轧辊44中的冷却剂,形成的半凝固片56的厚度会大于片54,从而形成的P层52会比N层50更厚。
作为选择,可不通过加热器42来进行上述过程,或者配置加热器42,使其仅向各个半凝固片54,56的内表面提供热量。但是,由于加热器42可增进层50,52间形成稳固的冶金结合,所以应优选使用加热器42。此外,加热器42的退火效应可减轻临近P-N结58发生的结晶无序,从而提高光伏发电效率。为了进一步减少结晶无序并提高效率,也可能在连铸模12的下方对一层或多层光电元件的层50,52进行加热。
如图3所示,根据本发明的另一种实施方案构建用于制造光电元件的系统60。系统60包括第一及第二浇包62,64,所述浇包适用于分别将熔融的N型材料和熔融的P型材料送入第一及第二浇口盘66,68。在第二个实施方案中,同样优选对硅材料进行加热,使已经部分净化的硅粒或硅锭变成熔融状态。然后,优选地,将其传送至另一个熔炉中进行最后的提炼及掺杂,然后分别将N型和P型熔融材料送至系统60中各自的浇包62,64内。
第一及第二浇口盘66,68适用于各自通过分配喷嘴70,72分别将熔融的N型及P型材料连续送入连铸模12的第一及第二模腔30,32,其中,另外构建的连铸模12与上述第一个实施方案的连铸模12结构相同。
通过切割塑形组件28切割并成形光电元件48,将其分成小片,在此之后,利用已知常规方法,光电元件48的一个表面可接合防反射涂层82和导体带84,另一表面可接合导电金属垫板86,以此来完成光电池80的组装。如图4所示,透明盖板88可固定在防反射涂层82的顶部。
如图5所示,根据本发明的另一个实施方案,双带浇铸系统90可代替铸轧系统10用来连续制造光电元件48。优选地,双带浇铸系统90包括用于浇铸N型片94的第一带铸组件92以及用于浇铸P型片98的第二带铸组件96。第一带铸组件92包括绕辊轮102,104运动的第一上铸带100以及绕辊轮108,110运动的第一下铸带106。第二带铸组件包括绕辊轮114,116运动的第二上铸带112以及绕辊轮120,122运动的第二下铸带118。
下铸带106,118受辊轮110,120牵制形成浇铸喉管,其中片94,98的内表面被轧压在一起,从而促进片94,98的冶金结合。
在双带浇铸中,片94,98的初始凝固一次发生在各自的下带106,118,一次发生在各自的上带100,112,这两个片94,98由片的液心持续生长,直至它们在中心相接。可以通过调节各带的温度来调节任意片94,98的任意一侧的厚度。此外,通过分别保持上带100,112的热度,为了形成光电元件48而与其它片接合的各片的接合侧可保持柔软的半熔融状态,从而促进冶金结合。
优选地,还设置加热和导向元件124,该元件包括热源,例如用于为片94,98的其中一片或两片的上表面施加额外热量的电阻加热器。加热和导向元件124进一步软化或重新熔化片的上表面,这会进一步促进冶金结合。通过保持带100,112的热度和/或采用加热和导向元件124来防止每侧的上侧片生长过快,还可能利用系统90在水平或接近水平的配置中进行连续浇铸。
然而,应当理解,虽然在以上描述中对本发明的许多特征和优势及其结构和功能的详细信息进行了说明,但本发明所公开的内容仅供说明,在充分遵循附加的权利要求书所概括的发明原则的情况下,细节特别是零件的形状,尺寸和布置可以有所变化。
Claims (16)
1.一种制造光电元件的方法,包括:
利用连铸工艺同时形成第一N型材料层和第二P型材料层;并且
在利用连铸工艺形成第一N型材料层和第二P型材料层的同时连续接合所述第一N型材料层及第二P型材料层,从而形成P-N结。
2.根据权利要求1所述的制造光电元件的方法,其中所述的用来形成P-N结的所述第一N型材料层及第二P型材料层的连续接合步骤在第一N型材料层及第二P型材料层仍处于连铸过程的高温时进行。
3.根据权利要求2所述的制造光电元件的方法,其中所述的用来形成P-N结的所述第一N型材料层及第二P型材料层的连续接合步骤在第一N型材料层及第二P型材料层其中之一的至少一部分是半熔融状态时进行。
4.根据权利要求3所述的制造光电元件的方法,进一步包括步骤:对所述第一N型材料层及第二P型材料层中的至少一层的至少一个表面进行补偿加热,使该表面接合到所述第一N型材料层及第二P型材料层中另一层的一面,从而用来形成P-N结。
5.根据权利要求1所述的制造光电元件的方法,其中所述的利用连铸工艺同时形成第一N型材料层和第二P型材料层的步骤利用连铸模来实现,所述连铸模包括容纳熔融的N型材料的第一模腔、容纳熔融的P型材料的第二模腔以及隔开所述第一及第二模腔的隔板。
6.根据权利要求1所述的制造光电元件的方法,其中所述的同时形成第一N型材料层和第二P型材料层的步骤利用连铸机来实现,所述连铸机包括第一铸轧辊,所述第一铸轧辊用于成形并冷却所述第一N型材料层及第二P型材料层的其中一层。
7.根据权利要求6所述的制造光电元件的方法,其中所述的同时形成第一N型材料层和第二P型材料层的步骤进一步利用第二铸轧辊来实现,所述第二铸轧辊用于成形并冷却所述第一N型材料层及第二P型材料层的另一层。
8.根据权利要求5所述的制造光电元件的方法,其中至少所述N型材料和所述P型材料中的一种材料包含硅。
9.一种制造光电元件的方法,包括:
向一连铸模供应熔融的N型材料;
向该连铸模供应熔融的P型材料;并且
利用所述连铸模由所述熔融的N型材料及所述熔融的P型材料连续铸造一具有P-N结的光电元件。
10.根据权利要求9所述的制造光电元件的方法,其中,所述的供应该熔融的N型材料的步骤利用第一浇口盘来实现;所述的供应该熔融的P型材料的步骤利用第二浇口盘来实现。
11.根据权利要求9所述的制造光电元件的方法,其中,所述的供应该熔融的N型材料的步骤通过向该连铸模的第一模腔供应该熔融的N型材料来实现;所述的供应该熔融的P型材料的步骤通过向该连铸模的第二模腔供应该熔融的P型材料来实现。
12.根据权利要求9所述的制造光电元件的方法,其中所述的连续铸造一具有P-N结的光电元件的步骤可通过利用集成到所述连铸模的第一铸轧辊将熔融的N型材料及熔融的P型材料中的一种材料成形和冷却成为第一半固态片来实现。
13.根据权利要求12所述的制造光电元件的方法,其中所述的连续铸造具有P-N结的光电元件的步骤进一步通过利用第二铸轧辊将熔融的N型材料及熔融的P型材料中的另外一种材料成形和冷却成为第二半固态片来实现。
14.根据权利要求13所述的制造光电元件的方法,其中所述的连续铸造具有P-N结的光电元件的步骤进一步通过将所述第一及第二半固态片轧压在一起从而形成接合的P-N结来实现。
15.根据权利要求14所述的制造光电元件的方法,其中所述的将所述第一及第二半固态片轧压在一起从而形成接合的P-N结的步骤通过第一及第二铸轧辊来实现。
16.根据权利要求13所述的制造光电元件的方法,其中所述的连续铸造具有P-N结的光电元件的步骤进一步通过向所述第一及第二半固态片中的至少一片的反向于各自铸轧辊的一个表面施加额外的热量来实现。
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Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110233478A1 (en) * | 2008-12-01 | 2011-09-29 | Sumitomo Chemical Company, Limited | Silicon for n-type solar cells and a method of producing phosphorus-doped silicon |
US20110036530A1 (en) * | 2009-08-11 | 2011-02-17 | Sears Jr James B | System and Method for Integrally Casting Multilayer Metallic Structures |
US20110036531A1 (en) * | 2009-08-11 | 2011-02-17 | Sears Jr James B | System and Method for Integrally Casting Multilayer Metallic Structures |
JP5669006B2 (ja) * | 2010-10-19 | 2015-02-12 | 日本電気硝子株式会社 | 帯状ガラスフィルム製造方法及び帯状ガラスフィルム製造装置 |
US20140099232A1 (en) * | 2012-10-09 | 2014-04-10 | Corning Incorporated | Sheet of semiconducting material, system for forming same, and method of forming same |
GB2543517A (en) * | 2015-10-20 | 2017-04-26 | Pyrotek Eng Mat Ltd | Caster tip for a continuous casting process |
US20170245614A1 (en) * | 2016-02-26 | 2017-08-31 | Michalyn Demaris Porter | Hairdryer Attachment |
CN107946390A (zh) * | 2017-12-04 | 2018-04-20 | 孙健春 | 一种具有换电网的太阳能电池及制作方法 |
CN114107853B (zh) * | 2021-11-25 | 2022-11-29 | 兰州理工大学 | 一种低层错能镍基高温合金的生产工艺及装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101164173A (zh) * | 2005-04-26 | 2008-04-16 | 信越半导体股份有限公司 | 一种太阳能电池的制造方法以及太阳能电池 |
Family Cites Families (102)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3353934A (en) * | 1962-08-14 | 1967-11-21 | Reynolds Metals Co | Composite-ingot |
US3206808A (en) * | 1962-08-14 | 1965-09-21 | Reynolds Metals Co | Composite-ingot casting system |
US3848658A (en) * | 1973-03-16 | 1974-11-19 | Hazelett Strip Casting Corp | Carriage orientation and lift system for a twin belt continuous metal casting machine |
US3949805A (en) * | 1973-04-12 | 1976-04-13 | Hazelett Strip-Casting Corporation | Symmetrical belt tensioning system and apparatus for twin-belt continuous casting machines |
US3878883A (en) * | 1973-04-12 | 1975-04-22 | Hazelett Strip Casting Corp | Symmetrical synchronized belt-steering and tensioning system and apparatus for twin-belt continuous metal casting machines |
US3963068A (en) * | 1973-04-12 | 1976-06-15 | Hazelett Strip-Casting Corporation | Symmetrical synchronized belt-steering system and apparatus for twin-belt continuous metal casting machines |
US3828841A (en) * | 1973-05-03 | 1974-08-13 | Hazelett Strip Casting Corp | Twin-belt metal casting machine having removable core assembly including coolant applicators and back-up rollers |
US3865176A (en) * | 1973-09-28 | 1975-02-11 | Hazelett Strip Casting Corp | Casting method for twin-belt continuous metal casting machines |
US3955615A (en) * | 1973-09-28 | 1976-05-11 | Hazelett Strip-Casting Corporation | Twin-belt continuous casting apparatus |
US4002197A (en) * | 1973-11-09 | 1977-01-11 | Hazelett Strip-Casting Corporation | Continuous casting apparatus wherein the temperature of the flexible casting belts in twin-belt machines is controllably elevated prior to contact with the molten metal |
US3937270A (en) * | 1973-11-09 | 1976-02-10 | Hazelett Strip-Casting Corporation | Twin-belt continuous casting method providing control of the temperature operating conditions at the casting belts |
US3866665A (en) * | 1974-01-02 | 1975-02-18 | Allis Chalmers | Twin strand continuous casting apparatus with a tundish load balancing vessel |
US3937274A (en) * | 1974-05-15 | 1976-02-10 | Hazelett Strip-Casting Corporation | Belt back-up apparatus and coolant application means for twin-belt casting machines |
DE2508369A1 (de) * | 1975-02-26 | 1976-09-02 | Siemens Ag | Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen |
US4082101A (en) * | 1975-08-07 | 1978-04-04 | Hazelett Strip-Casting Corporation | Coolant nozzle apparatus in twin-belt continuous casting machines |
US4056140A (en) * | 1976-10-20 | 1977-11-01 | United States Steel Corporation | Method and mechanism for controlling forces in a continuous-casting machine |
JPS55126528A (en) | 1979-03-26 | 1980-09-30 | Tdk Corp | Production of silicon thin strip |
US4260008A (en) * | 1979-05-30 | 1981-04-07 | Asarco Incorporated | Side dam apparatus for use in twin-belt continuous casting machines |
US4239081A (en) * | 1979-05-30 | 1980-12-16 | Asarco Incorporated | Side dam apparatus for use in twin-belt continuous casting machines |
US4291747A (en) * | 1979-10-31 | 1981-09-29 | Gus Sevastakis | Cooler for twin strand continuous casting |
US4323419A (en) * | 1980-05-08 | 1982-04-06 | Atlantic Richfield Company | Method for ribbon solar cell fabrication |
EP0040488A1 (en) * | 1980-05-15 | 1981-11-25 | International Business Machines Corporation | Method of fabricating a ribbon structure |
US4515650A (en) * | 1980-05-15 | 1985-05-07 | International Business Machines Corporation | Method for producing large grained semiconductor ribbons |
JPS57132372A (en) * | 1981-02-09 | 1982-08-16 | Univ Tohoku | Manufacture of p-n junction type thin silicon band |
US4671341A (en) * | 1981-12-14 | 1987-06-09 | Hazelett Strip-Casting Corporation | Systems for shaping the casting region in a twin-belt continuous casting machine for improving heat transfer and product uniformity and enhanced machine performance |
US4658883A (en) * | 1981-12-14 | 1987-04-21 | Hazelett Strip-Casting Corporation | Systems for shaping the casting region in a twin-belt continuous casting machine for improving heat transfer and product uniformity and enhanced machine performance |
US4552201A (en) * | 1981-12-14 | 1985-11-12 | Hazelett Strip-Casting Corp. | Methods for shaping the casting region in a twin-belt continuous casting machine for improving heat transfer and product uniformity and enhanced machine performance |
US4674558A (en) * | 1981-12-14 | 1987-06-23 | Hazelett Strip-Casting Corporation | Methods for shaping the casting region in a twin-belt continuous casting machine for improving heat transfer and product uniformity and enhanced machine performance |
JPS60160181A (ja) * | 1984-01-30 | 1985-08-21 | Mitsubishi Electric Corp | アモルフアス太陽電池 |
DE3431316C2 (de) * | 1984-08-25 | 1986-01-16 | Fried. Krupp Gmbh, 4300 Essen | Führungseinrichtung an den Gießbändern einer Doppelbandstranggießkokille |
DE3444689A1 (de) * | 1984-12-07 | 1986-01-16 | Fried. Krupp Gmbh, 4300 Essen | Fuehrungseinrichtung an den giessbaendern einer doppelbandstranggiesskokille |
US4546813A (en) * | 1985-02-19 | 1985-10-15 | United States Steel Corporation | Adjustable insert for twin casting |
EP0208890B1 (de) * | 1985-06-19 | 1991-12-27 | SUNDWIGER EISENHÜTTE MASCHINENFABRIK GmbH & CO. | Verfahren zum Herstellen eines Metallstranges, insbesondere in Form eines Bandes oder Profils durch Giessen und Vorrichtung zur Durchführung dieses Verfahrens |
JPS6233047A (ja) * | 1985-08-05 | 1987-02-13 | Nisshin Steel Co Ltd | 双ドラム式連続鋳造機 |
US4712602A (en) * | 1986-09-11 | 1987-12-15 | Hazelett Strip-Casting Corporation | Pool-level sensing probe and automatic level control for twin-belt continuous metal casting machines |
US4934441A (en) * | 1986-12-03 | 1990-06-19 | Hazelett Strip-Casting Corporation | Edge dam tensioning and sealing method and apparatus for twin-belt continuous casting machine |
CA1332101C (en) * | 1987-06-08 | 1994-09-27 | Kiyomi Shio | Twin belt type casting machine and method of casting by using the same |
JPH01118346A (ja) * | 1987-10-29 | 1989-05-10 | Sumitomo Heavy Ind Ltd | ツインベルトキャスターによる鋳造方法およびその装置 |
CA1315518C (en) * | 1987-12-23 | 1993-04-06 | Keiichi Katahira | Twin belt type continuous casting machine |
JPH01191482A (ja) * | 1988-01-27 | 1989-08-01 | Sharp Corp | 半導体基板の製造方法 |
US4813471A (en) * | 1988-05-05 | 1989-03-21 | Hazelett Strip-Casting Corporation | Method for determining molten metal pool level in twin-belt continuous casting machines |
EP0349904B1 (en) * | 1988-07-05 | 1994-02-23 | Sumitomo Sitix Co., Ltd. | Apparatus for casting silicon |
US4901785A (en) * | 1988-07-25 | 1990-02-20 | Hazelett Strip-Casting Corporation | Twin-belt continuous caster with containment and cooling of the exiting cast product for enabling high-speed casting of molten-center product |
JP2591098B2 (ja) * | 1988-07-26 | 1997-03-19 | 石川島播磨重工業株式会社 | 双ロール式連続鋳造機 |
JP2649066B2 (ja) * | 1988-08-03 | 1997-09-03 | 新日本製鐵株式会社 | 双ロール式薄板連続鋳造方法 |
US5217061A (en) * | 1988-09-30 | 1993-06-08 | Nisshin Steel Co., Ltd. | Twin roll continuous casting of metal strip |
US5027888A (en) * | 1989-01-31 | 1991-07-02 | Hitachi Zosen Corporation | Method and apparatus for sealing molten metal for a twin-roll type continous casting apparatus |
JPH0399757A (ja) * | 1989-09-11 | 1991-04-24 | Nippon Steel Corp | 双ロール式薄板連続鋳造方法 |
US4972900A (en) * | 1989-10-24 | 1990-11-27 | Hazelett Strip-Casting Corporation | Permeable nozzle method and apparatus for closed feeding of molten metal into twin-belt continuous casting machines |
US5031688A (en) * | 1989-12-11 | 1991-07-16 | Bethlehem Steel Corporation | Method and apparatus for controlling the thickness of metal strip cast in a twin roll continuous casting machine |
GB9017042D0 (en) * | 1990-08-03 | 1990-09-19 | Davy Mckee Poole | Twin roll casting |
JP2935748B2 (ja) * | 1990-08-03 | 1999-08-16 | デイビー マッキー(プール)リミテッド | ツインロール鋳造法 |
CA2084418C (en) * | 1991-04-19 | 1997-02-25 | Toshiaki Mizoguchi | Twin roll-type sheet continuous casting method and apparatus |
NZ242595A (en) * | 1991-05-23 | 1993-09-27 | Ishikawajima Harima Heavy Ind | Casting metal strip; delivery nozzle for delivering molten metal to nip rollers |
CA2104375C (en) * | 1991-12-19 | 1998-08-25 | Kenichi Miyazawa | Process for producing thin sheet by continuous casting in twin-roll system |
JPH0749140B2 (ja) * | 1992-02-17 | 1995-05-31 | 三菱重工業株式会社 | 双ドラム式連続鋳造装置 |
WO1993022086A1 (en) * | 1992-04-28 | 1993-11-11 | Alcan International Limited | Method for preventing sticking on a twin roll caster |
CA2096365A1 (en) * | 1992-06-23 | 1993-12-24 | Donald G. Harrington | Method and apparatus for continuous casting of metals |
JPH07204792A (ja) * | 1994-01-24 | 1995-08-08 | Mitsubishi Heavy Ind Ltd | ツインドラム式連続鋳造装置 |
WO1995026840A1 (en) * | 1994-04-04 | 1995-10-12 | Nippon Steel Corporation | Twin-roll type continuous casting method and device |
DE4420697C2 (de) | 1994-06-14 | 1997-02-27 | Inst Verformungskunde Und Huet | Stranggießkokille zum Gießen eines Verbundmetallstranges mit einem Trennkörper zum Trennen der eingegossenen Schmelzen der Teilstränge |
WO1996001710A1 (en) | 1994-07-08 | 1996-01-25 | Ipsco Inc. | Method of casting and rolling steel using twin-roll caster |
FR2727338A1 (fr) * | 1994-11-30 | 1996-05-31 | Usinor Sacilor | Dispositif de coulee continue entre cylindres a capotage d'inertage |
FR2727337B1 (fr) * | 1994-11-30 | 1996-12-27 | Usinor Sacilor | Dispositif de support d'une face laterale d'une installation de coulee continue de bandes metalliques entre cylindres |
FR2728817A1 (fr) * | 1994-12-29 | 1996-07-05 | Usinor Sacilor | Procede de regulation pour la coulee continue entre cylindres |
GB9500156D0 (en) * | 1995-01-05 | 1995-03-01 | Davy Mckee Sheffield | Twin roll casting |
AUPN426095A0 (en) * | 1995-07-19 | 1995-08-10 | Bhp Steel (Jla) Pty Limited | Method and apparatus for giving vibration to molten metal in twin roll continuous casting machine |
FR2737859B1 (fr) * | 1995-08-18 | 1997-09-12 | Usinor Sacilor | Dispositif de soutien d'une face laterale d'une installation de coulee continue de bandes metalliques entre cylindres |
JP3624025B2 (ja) * | 1995-08-23 | 2005-02-23 | キヤノン株式会社 | 光起電力素子の形成方法 |
CN1072053C (zh) * | 1997-02-17 | 2001-10-03 | 新日本制铁株式会社 | 双滚筒式薄板连续铸造设备及其连续铸造方法 |
JPH10258339A (ja) * | 1997-03-18 | 1998-09-29 | Mitsubishi Heavy Ind Ltd | 双ドラム式連続鋳造方法 |
CA2232777C (en) | 1997-03-24 | 2001-05-15 | Hiroyuki Baba | Method for producing silicon for use in solar cells |
FR2762534B1 (fr) * | 1997-04-29 | 1999-05-28 | Usinor | Installation de coulee continue de bandes metalliques entre deux cylindres |
AUPO749697A0 (en) * | 1997-06-23 | 1997-07-17 | Bhp Steel (Jla) Pty Limited | Twin roll continuous casting installation |
FR2765504B1 (fr) * | 1997-07-04 | 1999-08-20 | Usinor | Face laterale d'obturation de l'espace de coulee d'une installation de coulee continue entre cylindres de bandes minces metalliques |
AUPO832897A0 (en) * | 1997-07-30 | 1997-08-28 | Bhp Steel (Jla) Pty Limited | Twin roll casting |
US6202792B1 (en) * | 1997-12-20 | 2001-03-20 | Pohang Iron & Steel Co., Ltd. | Apparatus for lubricating edge dam in twin-roll type strip casting machine, and method therefor |
KR100333070B1 (ko) * | 1997-12-20 | 2002-10-18 | 주식회사 포스코 | 쌍롤식박판주조장치에서의에지댐위치제어방법 |
KR100314849B1 (ko) * | 1997-12-24 | 2002-01-15 | 이구택 | 쌍롤형 박판제조 장치에서의 박판두께 제어방법 |
JP3814086B2 (ja) * | 1998-12-04 | 2006-08-23 | 新日本製鐵株式会社 | 双ドラム式連続鋳造装置用の冷却ドラム |
FR2791286B1 (fr) * | 1999-03-26 | 2001-05-04 | Lorraine Laminage | Procede de fabrication de bandes en acier au carbone par coulee continue entre deux cylindres |
CH691574A5 (de) | 1999-09-24 | 2001-08-31 | Main Man Inspiration Ag | Bandgiessmaschine zur Erzeugung eines Metallbandes. |
ES2310546T3 (es) | 2000-03-09 | 2009-01-16 | Isovolta Ag | Procedimiento para la fabricacion de un modulo fotovoltaico de pelicula delgada. |
JP3684138B2 (ja) * | 2000-05-17 | 2005-08-17 | 新日本製鐵株式会社 | 双ドラム式連鋳サイド堰用セラミックプレート材 |
US6705384B2 (en) * | 2001-10-23 | 2004-03-16 | Alcoa Inc. | Simultaneous multi-alloy casting |
KR100544578B1 (ko) * | 2001-12-21 | 2006-01-24 | 주식회사 포스코 | 쌍롤식 박판주조기에서 롤표면 오염과 주편에지부 미응고방지장치 |
KR100584751B1 (ko) * | 2001-12-22 | 2006-05-30 | 주식회사 포스코 | 쌍롤식 박판주조기의 주조롤표면 가스층두께 조절장치 |
ITMI20021510A1 (it) * | 2002-07-10 | 2004-01-12 | Danieli Off Mecc | Impianto per la colata continua di nastro metallico |
FR2842130B1 (fr) * | 2002-07-12 | 2004-10-15 | Usinor | Face laterale pour installation de coulee continue de bandes metalliques entre deux cylindres |
AU2002951075A0 (en) * | 2002-08-29 | 2002-09-12 | Commonwealth Scientific And Industrial Research Organisation | Twin roll casting of magnesium and magnesium alloys |
KR100518327B1 (ko) * | 2002-12-23 | 2005-10-04 | 주식회사 포스코 | 쌍롤형 박판 주조장치에서의 초기 주조된 박판의 인발방법 |
AT412539B (de) * | 2003-05-06 | 2005-04-25 | Voest Alpine Ind Anlagen | Zweiwalzengiesseinrichtung |
SI1638715T2 (sl) * | 2003-06-24 | 2019-06-28 | Novelis, Inc. | Postopek za litje kompozitnega ingota |
US7484551B2 (en) * | 2003-10-10 | 2009-02-03 | Nucor Corporation | Casting steel strip |
JP2007051026A (ja) * | 2005-08-18 | 2007-03-01 | Sumco Solar Corp | シリコン多結晶の鋳造方法 |
US20090321996A1 (en) | 2005-08-19 | 2009-12-31 | Sumco Solar Corporation | Silicon Electro-Magnetic Casting Apparatus and Operation Method of the Same |
US7572334B2 (en) | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
BRPI0706659A2 (pt) | 2006-01-20 | 2011-04-05 | Bp Corp North America Inc | métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos |
JP2008156166A (ja) * | 2006-12-25 | 2008-07-10 | Sumco Solar Corp | シリコンインゴットの鋳造方法および切断方法 |
KR20100050510A (ko) | 2007-07-20 | 2010-05-13 | 비피 코포레이션 노쓰 아메리카 인코포레이티드 | 시드 결정으로부터 캐스트 실리콘을 제조하는 방법 |
US8591649B2 (en) | 2007-07-25 | 2013-11-26 | Advanced Metallurgical Group Idealcast Solar Corp. | Methods for manufacturing geometric multi-crystalline cast materials |
US8709154B2 (en) | 2007-07-25 | 2014-04-29 | Amg Idealcast Solar Corporation | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
-
2009
- 2009-07-21 US US12/506,969 patent/US7888158B1/en not_active Expired - Fee Related
-
2010
- 2010-07-02 WO PCT/US2010/040858 patent/WO2011011184A2/en active Application Filing
- 2010-07-02 CN CN201080033498.1A patent/CN102473793B/zh not_active Expired - Fee Related
- 2010-07-02 EP EP10802642.8A patent/EP2457264A4/en not_active Withdrawn
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101164173A (zh) * | 2005-04-26 | 2008-04-16 | 信越半导体股份有限公司 | 一种太阳能电池的制造方法以及太阳能电池 |
Non-Patent Citations (1)
Title |
---|
Simultaneous Junction Formation Using a Directed Energy Light Source;R.B.Campbell;《Journal of the Electrochemical Society》;19861001;第133卷(第10期);第2210页左栏第1行-第2211页左栏最后1行 * |
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US20110020972A1 (en) | 2011-01-27 |
EP2457264A2 (en) | 2012-05-30 |
US7888158B1 (en) | 2011-02-15 |
WO2011011184A3 (en) | 2011-04-28 |
CN102473793A (zh) | 2012-05-23 |
WO2011011184A2 (en) | 2011-01-27 |
EP2457264A4 (en) | 2015-03-04 |
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