CN102498549A - Grooved cmp polishing pad - Google Patents
Grooved cmp polishing pad Download PDFInfo
- Publication number
- CN102498549A CN102498549A CN2010800414168A CN201080041416A CN102498549A CN 102498549 A CN102498549 A CN 102498549A CN 2010800414168 A CN2010800414168 A CN 2010800414168A CN 201080041416 A CN201080041416 A CN 201080041416A CN 102498549 A CN102498549 A CN 102498549A
- Authority
- CN
- China
- Prior art keywords
- polishing pad
- pad
- groove
- polishing
- overlap joint
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
The present invention provides polishing pads for use in CMP processes. In one embodiment, a pad comprises a surface defining a plurality of grooves with landing surfaces separating the grooves, the landing surfaces together defining a substantially coplanar polishing surface, each groove having a depth of at least 10 mil and a width, WG, with any two adjacent grooves being separated from each other a landing surface having a width, WL, wherein the quotient WL/WG is less than or equal to 3. In a preferred embodiment, the surface of the pad defines a series of concentric substantially circular grooves.; In an alternative embodiment, the surface of the pad defines a spiral groove having a depth of at least 10 mil and a width WG, and a spiral landing surface outlining spiral groove the having a width, WL, wherein the spiral landing surface defines a substantially coplanar polishing surface and the quotient WL/WG is less than or equal to 3.
Description
Technical field
Present invention relates in general to the chemico-mechanical polishing of base material, and more particularly, the present invention relates to be used for the polishing pad with plough groove type pattern of chemical-mechanical polishing system.
Background technology
The composition and the method that are used for substrate surface is carried out chemico-mechanical polishing are well known in the art.The polishing composition (being also referred to as polishing slurries, CMP slurry and CMP composition) of CMP that is used for the surface of semiconductor substrate (for example integrated circuit) typically comprises grinding agent, various additive compound etc.
Chemico-mechanical polishing (CMP) relate to the surface simultaneous chemical grinding and mechanical lapping, for example, on cover ground floor grinding to expose this ground floor surface of the second layer of (non-planar) not at grade formed thereon.A kind of such method is described in people's such as Beyer the United States Patent(USP) No. 4,789,648.In brief, people such as Beyer discloses and has used polishing pad and slurry to remove with the speed faster than the second layer that ground floor covers ground floor on material surface becomes and the CMP method of the upper surface coplane of the second layer that is capped.The more detailed explanation of chemico-mechanical polishing is referring to United States Patent(USP) No. 4,671, and 851, No.4,910,155 and No.4,944,836.
In the CMP of routine technology, substrate carrier or rubbing head be installed on the carrier module and be positioned to the CMP device in polishing pad contact.Carrier module provides controllable pressure to base material, forces base material to abut against polishing pad.This pad and carrier and the base material that adheres to thereof relative to each other move.The a part thus effect of polishing substrate of surface to remove material from substrate surface of grinding base material played in relatively moving of this pad and base material.The polishing of substrate surface is typically further by means of the chemism of polishing composition (for example, be present in the CMP composition oxidant, acid, alkali or other additive) and/or be suspended in the mechanical activation of the grinding agent in the polishing composition.Typical abrasive materials comprises silicon dioxide, ceria, aluminium oxide, zirconia and tin oxide.
A problem among the CMP relates to the distribution of polishing slurries on polishing pad.The CMP method needs any reaction reagent or the interaction of chemicals and base material in polishing pad, abrasive particles and the polishing composition, thereby obtains required polish results.The distribution of the poor efficiency of slurry on whole pad interface can cause the reduction of polishing efficiency.Polishing pad generally includes some characteristics, for example bores a hole or texture (like groove, surface depression etc.), to help the relative uniform distribution of grinding and polishing slurry on whole pad.Groove is preferred textural characteristics often, because groove can be designed to excessive slurry is directly guided to the place that needs this slurry.The characteristic of plough groove type polishing pad often is the size (like the width and the degree of depth) and the spacing between the groove (being called " pitch (pitch) ") of groove.The instance of plough groove type pad comprise in people's such as people's such as people's such as Osterheld United States Patent(USP) No. 5,921,855, Osterheld United States Patent(USP) No. 6,520,847 and James the United States Patent(USP) No. 6,736,847 disclosed those.
Though conventional plough groove type CMP pad has some preferred performance characteristicses with respect to the pad (perforated pad) of for example perforation; But; The pad performance characteristic that this area still need be improved, the pad life that for example improves (such as, because the pad life of the improvement that the rate of depreciation of reduction causes).The invention solves this needs.
Summary of the invention
The invention provides the polishing pad that is used for the CMP method.In one embodiment, pad comprises the surface on the overlap joint surface (landing surface) that defines a plurality of grooves and separate said groove, and smooth basically polished surface has been defined on said each overlap joint surface together, and each groove has width W
GAnd the degree of depth of at least 10 mils, any two adjacent trenches overlap joint separated from one another surfaces are had width W
L, wherein, W
L/ W
GThe merchant be less than or equal to 3.In preferred embodiments, the delimited of pad a series of with one heart, circular groove basically.Preferably, each groove has identical W
G, and each overlap joint surface has identical W
L
In selectable embodiment, the delimited of pad have a width W
GAnd the spiral groove of the degree of depth of at least 10 mils and the spirality overlap joint surface of sketching the contours of the profile of (outline) said spiral groove.Said spirality overlap joint surface has width W
L, and defined smooth basically polished surface.With the same in the previous embodiments, W
L/ W
GThe merchant be less than or equal to 3.
The polished surface of polishing pad of the present invention can be formed by the arbitrary substance that is applicable to the CMP mat structure.In some preferred embodiments, the polished surface of said pad is formed by the thermoplastic polyurethane material.Said pad can be made up of single-layer pad material or a plurality of layers (like basalis and superficial layer).
With structural similarity but W
L/ W
GEqual 7 conventional plough groove type pad and compare, polishing pad of the present invention removes in the polishing of long-term use the (for example polishing is up to 650 semiconductor wafers) and beat all improvement is provided aspect the speed uniformity.
Description of drawings
Fig. 1 has explained the plan view from above of the embodiment of the polishing pad of the present invention that comprises a plurality of circular shape concentric grooves.
Fig. 2 provides the partial cross sectional view of the pad of Fig. 1.
Fig. 3 has explained the embodiment of the polishing pad of the present invention that in polished surface, comprises single spiral groove.
Fig. 4 has shown that the copper that pad of the present invention is compared with conventional reference pad removes the figure of speed to the wafer number of polishing.
Fig. 5 has shown that the copper that pad of the present invention is compared with conventional reference pad removes the figure of speed uniformity stability to the wafer number of polishing.
Fig. 6 has shown the figure of the pad rate of depreciation that pad of the present invention is compared with conventional reference pad.
Embodiment
In one embodiment, polishing pad of the present invention comprises the surface that defines a plurality of grooves (preferred with one heart and circular basically groove) and separate the overlap joint surface of said groove.The polished surface of coplane has basically been defined on said overlap joint surface together.Each groove has width W
GAnd the degree of depth of at least 10 mils, any two the separated overlap joint of adjacent trenches surfaces are had width W
L, wherein, W
L/ W
GThe merchant be less than or equal to 3.Preferably, each in said a plurality of groove all has the substantially the same degree of depth and/or substantially the same W
GIn the said overlap joint surface each also all preferably has substantially the same W
LAlthough the bottom of groove can rounded (rounded), cause decrescence near the width of channel bottom,, in most gash depth, the width of each groove is preferably consistent basically.
Fig. 1 has explained the plan view from above of polishing pad of the present invention.Pad 10 comprises and defines the superficial layer 12 that is gone out the outer surface (peripheral surface) 18 on (framing) pad surface by overlap joint surface 16 separated circular concentric grooves 14 and frame structure.Each overlap joint surface 16 is coplane basically each other, and outer surface 18 is also like this with center surface 20.Generally speaking, the polished surface of coplane has basically been defined on overlap joint surface 16.
Fig. 2 has shown the partial cross sectional view of surface 12 2-2 along the plane of Fig. 1.Superficial layer 12 is fixed on the basalis 22.Groove 14 has depth D
GAnd width W
G, and overlap joint surface 16 has width W
LFrom the distance definition of the starting point of the starting point of a groove to next groove is pitch (pitch) P, and it equals W
LWith W
GSum.In pad of the present invention, W
L/ W
GBe less than or equal to 3.Overlap joint surface 16 is coplane basically, thereby is formed for contacting the coplane polished surface of polished substrate surface, and groove 14 provides the holder that is used for the abrasive polishing slurry and help guiding and distribution polishing slurries on the whole surface of pad 10.
In selectable embodiment, polishing pad of the present invention comprises the surface on the spirality overlap joint surface of the profile that defines the spiral groove with at least 10 mil degree of depth and sketch the contours of said spiral groove.Said spirality overlap joint delimited smooth basically polished surface.Said groove has width W
G, and said overlap joint surface has width W
L, W wherein
L/ W
GThe merchant be less than or equal to 3.Fig. 3 provides the plan view from above of such selectable embodiment.Pad 30 comprises smooth basically superficial layer 32, and said superficial layer 32 has the single spiral groove 34 that is formed at wherein, and said spiral groove 34 is sketched the contours of profile by nested (nested) spirality overlap joint surface 36.Pitch P also has been described among Fig. 3, and said pitch P equals groove 34 and the width sum that overlaps surface 36.
In each embodiment of the present invention, each groove in the pad interface preferably has the degree of depth that is no more than 50 mils.In some preferred embodiments, the degree of depth of each groove is 10-50 mil, 15-40 mil more preferably.
If necessary, in the embodiment that provides arbitrarily of polishing pad of the present invention, W
L/ W
GThe merchant can be less than or equal to 2, or be less than or equal to 1.
In some preferred embodiments, the W on each overlap joint surface
LBe no more than 80 mils.In other preferred embodiment, the W on each overlap joint surface
LBe the 30-60 mil.The W of each groove
GPreferably be no more than 50 mils.In some preferred embodiments, the W of each groove
GBe the 20-40 mil.
Table 1 has been explained some instantiations of the different groove dimensions that are applicable to polishing pad of the present invention.
Table 1
Polishing pad of the present invention is particularly suitable for being used in combination with chemical mechanical polishing apparatus.Typically, this CMP device comprises: pressing plate, and it is in the motion in use and has by track, linearity and/or speed that circular motion produced; Polishing pad, it contacts with this pressing plate and when motion, moves with respect to this pressing plate; And carrier, its fixing is treated through contact and move with respect to the surface of this polishing pad the base material that polishes with the surface of this polishing pad.The polishing of this base material takes place through following: with this base material be placed to contact with polishing pad of the present invention and make subsequently this polishing pad with respect to this base material move with mill except that at least a portion of this base material to polish this base material.
The appropriate materials that is used to form at least a portion of polishing pad of the present invention comprises, for example, and any suitable polymers of resilience when having different densities, hardness, thickness, compressibility, compression and modulus of compressibility.The limiting examples of such polymer comprise polyvinyl chloride, polyvinyl fluoride, nylon, fluorocarbon, Merlon, polyester, polyacrylate, polyethers, polyethylene, polyamide, polyurethane, polystyrene, polypropylene, its form altogether product, and composition thereof.The pad interface that defines a plurality of grooves can comprise such material arbitrarily.In preferred embodiments, the surface that defines a plurality of grooves or spiral groove comprises thermoplastic polyurethane.If necessary, pad of the present invention can be made up of perhaps the homogenous material layer and can comprise two or more material layers (for example basalis and superficial layer).
Desirably, CMP pad of the present invention can further comprise the window area of at least one transmitted light or other radiation, and it is used for coming original position inspection and monitoring polishing process through analyzing light or other radiation of reflecting from the surface of the work that uses this pad polishing.Be used for checking and many original position polishing endpoint detection systems and the technology of monitoring polishing process is as known in the art through analyzing from the light of surface of the work reflection or other radiation.Such method is described in people's such as people's such as Sandhu for example United States Patent(USP) No. 5,196,353, Lustig people's such as United States Patent(USP) No. 5,949,927 and Birang the United States Patent(USP) No. 5,964,643 of United States Patent(USP) No. 5,433,651, Tang.Desirably, make it possible to confirm polishing end point, that is, determine when the polishing process of termination specific workpiece for the inspection or the monitoring of the progress of the polishing process of just polished workpiece.
Following examples further specify the present invention, limit its scope by any way but should not be construed as certainly.
Embodiment 1
This embodiment has explained obtainable good removing rate stability and remove uniformity stability in utilizing the copper CMP of polishing pad of the present invention.
The polishing pad that comprises the thermoplastic polyurethane superficial layer comprises a series of circular concentric groove, and each groove has the width W of 30 mils
GAnd it is by width W
L(pitch is 60 mils), W are separated in the concentric overlap joint surface that is 30 mils
L/ W
GEqual 1.On the Mirra polishing machine; Use commercially available polishing slurries C8800 (Cabot Microelectronics Corporation; Aurora; IL), under following polishing condition, the copper blanket wafers is repeated polishing with identical pad: downforce is that 1 pound/square inch (psi), pressing plate speed are that 93 rev/mins (rpm), bearer rate are that 87rpm and slurry feed rate are 100 ml/min (mL/min).In order to compare, also with similar polyurethane polishing pad the copper blanket wafers is polished under the same conditions, wherein, said polishing pad has by concentric annular and overlaps surperficial separated concentric annular groove, still, W
LBe 70 mils and W
GBe 10 mils (pitch is 80 mils), W
L/ W
GBe 7.
Fig. 4 has explained that the copper of each pad removes the change of speed with respect to polished wafer quantity, and it has shown the speed that removes that obtains in wafer 150 and wafer 650 places.As obvious, has conventional W greater than 7 from Fig. 4
L/ W
GPad show the decline that Cu removes speed, and W
L/ W
GBe that 1 pad of the present invention demonstrates the beat all raising that Cu removes speed.
Drawn among Fig. 5 and removed uniformity stability percentage for same wafer observing of using that each pad obtained; It is defined as unevenness (with-in-wafer non-uniformity) in WIWNU or the wafer (that is, the Cu that scans of 49 spot diameters of the entire wafer except that the 5mm edge remove relative standard deviation).As can find out in Fig. 5 that compare with the pad of routine, what pad of the present invention demonstrated beat all self-consistentency removes uniformity stability.
This embodiment has explained the influence of trough configuration to the pad rate of depreciation.
Three kinds of polishing pads of the present invention that comprise thermoplastic polyurethane superficial layer (it comprises a series of circular concentric groove) are used for the counter piece wear testing.On the IPEC polishing machine, carry out this test with the finishing downforce of 7ft-lb, the pressing plate speed of 105rpm and the trimmer rotary speed of 100rpm.Trimmer comes from 3M company (model A188).Use deionized water and should test continue 40 minutes.Use is from 10 minutes to 40 minutes data computation rate of depreciation, and, through multiply by 2 with its be normalized to mil/hour.Said spacer has following size: pad 60/20---W
G=20 mils, W
L=40 mils, pitch=60 mils, W
L/ W
G=2; Pad 60/30---W
G=30 mils, W
L=30 mils, pitch=60 mils, W
L/ W
G=1; And fill up 40/20---W
G=20 mils, W
L=20 mils, pitch=40 mils, W
L/ W
G=1.In order to compare, tested similar polyurethane polishing pad, said polishing pad has by concentric annular and overlaps surperficial separated concentric annular groove, still, W
LBe 70 mils and W
GBe 10 mils (pitch is 80 mils), W
L/ W
GBe 7 (pads 80/10).
Fig. 6 provide unit of each pad of being studied be mil/hour the figure of pad rate of depreciation.Shown in the data among Fig. 6, for given groove width (for example 20 mils), along with W
L/ W
GReduce to 1 (being respectively pad 60/20 and 40/20), the raising of pad rate of depreciation from 2.In addition, for given pitch (for example 60 mils), along with groove width increases to 30 mils (being respectively pad 60/20 and 60/30) from 20 mils, rate of depreciation also improves.
Preferred implementation of the present invention has been described among this paper, comprise the inventor known carry out optimal mode of the present invention.Through reading above-mentioned specification, it is distinct that the variation of those preferred implementations can become for the person of ordinary skill of the art.The inventor hopes that the technical staff suitably adopts such variation, and inventor's intention lets the present invention put into practice with being different from the specifically described mode of this paper.Therefore, the institute that the present invention includes by theme cited in the appended claims that law allowed that is suitable for changes and equivalent.In addition, its combination in any of the above-mentioned key element in might changing comprise in the present invention, only if this paper have in addition explanation or with the obvious contradiction of context.
Claims (20)
1. be applicable to the polishing pad that base material is carried out chemico-mechanical polishing, said pad comprises the surface on the overlap joint surface that defines a plurality of grooves and separate said groove, and the polished surface of coplane has basically been defined on said overlap joint surface together, and each groove has width W
GAnd the degree of depth of at least 10 mils, and any two adjacent trenches are by having width W
LThe overlap joint surface separate W wherein
L/ W
GThe merchant be less than or equal to 3.
2. the polishing pad of claim 1, wherein, said a plurality of grooves comprise with one heart, circular groove basically.
3. the polishing pad of claim 1, wherein, said groove has the degree of depth that is no more than 50 mils.
4. the polishing pad of claim 1, wherein, the degree of depth of each groove is the 10-50 mil.
5. the polishing pad of claim 1, wherein, the W on each overlap joint surface
LBe no more than 80 mils.
6. the polishing pad of claim 1, wherein, the W on each overlap joint surface
LBe the 30-60 mil.
7. the polishing pad of claim 1, wherein, the W of each groove
GBe the 20-40 mil.
8. the polishing pad of claim 1, wherein, each groove has the substantially the same degree of depth.
9. the polishing pad of claim 1, wherein, each groove has substantially the same W
G
10. the polishing pad of claim 1, wherein, each overlap joint surface has substantially the same W
L
11. be applicable to the polishing pad that base material is carried out chemico-mechanical polishing; Said pad comprises the surperficial surface of spirality overlap joint that defines spiral groove and separate each circle of said spiral groove; Said spirality overlap joint delimited the polished surface of coplane basically, said groove has width W
GAnd the degree of depth of at least 10 mils, and said overlap joint surface has width W
L, W wherein
L/ W
GThe merchant be less than or equal to 3.
12. the polishing pad of claim 11, wherein, said spiral groove has the degree of depth that is no more than 50 mils.
13. the polishing pad of claim 11, wherein, the degree of depth of said groove is the 10-50 mil.
14. the polishing pad of claim 11, wherein, W
LBe no more than 80 mils.
15. the polishing pad of claim 11, wherein, W
LBe the 30-60 mil.
16. the polishing pad of claim 11, wherein, W
GBe the 20-40 mil.
17. the polishing pad of claim 11, wherein, said W
L/ W
GThe merchant be less than or equal to 2.
18. the polishing pad of claim 11, wherein, said W
L/ W
GThe merchant be less than or equal to 1.
19. the polishing pad of claim 1, wherein, said W
L/ W
GThe merchant be less than or equal to 2.
20. the polishing pad of claim 1, wherein, said W
L/ W
GThe merchant be less than or equal to 1.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US27106809P | 2009-07-16 | 2009-07-16 | |
| US61/271,068 | 2009-07-16 | ||
| PCT/US2010/042073 WO2011008918A2 (en) | 2009-07-16 | 2010-07-15 | Grooved cmp polishing pad |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102498549A true CN102498549A (en) | 2012-06-13 |
Family
ID=43450188
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010800414168A Pending CN102498549A (en) | 2009-07-16 | 2010-07-15 | Grooved cmp polishing pad |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20110014858A1 (en) |
| JP (1) | JP2012533888A (en) |
| KR (1) | KR101478414B1 (en) |
| CN (1) | CN102498549A (en) |
| SG (2) | SG177625A1 (en) |
| TW (1) | TWI519384B (en) |
| WO (1) | WO2011008918A2 (en) |
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| CN104736297A (en) * | 2012-12-26 | 2015-06-24 | 东洋橡胶工业株式会社 | Method for producing layered polishing pads |
| CN105793962A (en) * | 2013-10-18 | 2016-07-20 | 嘉柏微电子材料股份公司 | CMP polishing pad having edge exclusion region of offset concentric groove pattern |
| CN112720282A (en) * | 2020-12-31 | 2021-04-30 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN113829176A (en) * | 2021-08-31 | 2021-12-24 | 北京航天控制仪器研究所 | Grinding flat plate for grinding and polishing beryllium mirror body and grinding and polishing method |
| CN114274043A (en) * | 2021-12-29 | 2022-04-05 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
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| DE102009018434B4 (en) * | 2009-04-22 | 2023-11-30 | Ev Group Gmbh | Receiving device for holding semiconductor substrates |
| DE102011082777A1 (en) * | 2011-09-15 | 2012-02-09 | Siltronic Ag | Method for double-sided polishing of semiconductor wafer e.g. silicon wafer, involves forming channel-shaped recesses in surface of polishing cloth of semiconductor wafer |
| US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
| KR20240015167A (en) | 2014-10-17 | 2024-02-02 | 어플라이드 머티어리얼스, 인코포레이티드 | Cmp pad construction with composite material properties using additive manufacturing processes |
| US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
| US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
| US10875146B2 (en) * | 2016-03-24 | 2020-12-29 | Rohm And Haas Electronic Materials Cmp Holdings | Debris-removal groove for CMP polishing pad |
| USD816774S1 (en) * | 2016-03-25 | 2018-05-01 | Craig Franklin Edevold | Spiral pattern for cribbage board |
| EP3571009A4 (en) * | 2017-01-20 | 2021-01-20 | Applied Materials, Inc. | A thin plastic polishing article for cmp applications |
| USD855110S1 (en) * | 2017-01-31 | 2019-07-30 | Gary Peterson | Game board |
| US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
| WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | Abrasive delivery polishing pads and manufacturing methods thereof |
| CN112654655A (en) | 2018-09-04 | 2021-04-13 | 应用材料公司 | Advanced polishing pad formulations |
| US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
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2010
- 2010-07-15 WO PCT/US2010/042073 patent/WO2011008918A2/en active Application Filing
- 2010-07-15 SG SG2012002234A patent/SG177625A1/en unknown
- 2010-07-15 JP JP2012520766A patent/JP2012533888A/en active Pending
- 2010-07-15 SG SG10201404152UA patent/SG10201404152UA/en unknown
- 2010-07-15 KR KR1020127003925A patent/KR101478414B1/en not_active IP Right Cessation
- 2010-07-15 CN CN2010800414168A patent/CN102498549A/en active Pending
- 2010-07-16 TW TW099123549A patent/TWI519384B/en not_active IP Right Cessation
- 2010-07-16 US US12/837,705 patent/US20110014858A1/en not_active Abandoned
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| CN104736297A (en) * | 2012-12-26 | 2015-06-24 | 东洋橡胶工业株式会社 | Method for producing layered polishing pads |
| CN105793962A (en) * | 2013-10-18 | 2016-07-20 | 嘉柏微电子材料股份公司 | CMP polishing pad having edge exclusion region of offset concentric groove pattern |
| CN105793962B (en) * | 2013-10-18 | 2019-03-29 | 嘉柏微电子材料股份公司 | The cmp polishing pad of the edge exclusion area of concentric grooves pattern with biasing |
| CN112720282A (en) * | 2020-12-31 | 2021-04-30 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN113829176A (en) * | 2021-08-31 | 2021-12-24 | 北京航天控制仪器研究所 | Grinding flat plate for grinding and polishing beryllium mirror body and grinding and polishing method |
| CN114274043A (en) * | 2021-12-29 | 2022-04-05 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
| CN114274043B (en) * | 2021-12-29 | 2023-02-24 | 湖北鼎汇微电子材料有限公司 | Polishing pad |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011008918A2 (en) | 2011-01-20 |
| US20110014858A1 (en) | 2011-01-20 |
| SG10201404152UA (en) | 2014-09-26 |
| KR20120042985A (en) | 2012-05-03 |
| SG177625A1 (en) | 2012-02-28 |
| WO2011008918A3 (en) | 2011-04-28 |
| KR101478414B1 (en) | 2014-12-31 |
| JP2012533888A (en) | 2012-12-27 |
| TW201121711A (en) | 2011-07-01 |
| TWI519384B (en) | 2016-02-01 |
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Application publication date: 20120613 |