CN102569020A - Method and device for removing cut oxidation films of 8-inch wafers - Google Patents
Method and device for removing cut oxidation films of 8-inch wafers Download PDFInfo
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- CN102569020A CN102569020A CN2010105972425A CN201010597242A CN102569020A CN 102569020 A CN102569020 A CN 102569020A CN 2010105972425 A CN2010105972425 A CN 2010105972425A CN 201010597242 A CN201010597242 A CN 201010597242A CN 102569020 A CN102569020 A CN 102569020A
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- otch
- acid
- oxide
- film
- down groove
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 235000012431 wafers Nutrition 0.000 title abstract 7
- 230000003647 oxidation Effects 0.000 title abstract 4
- 238000007254 oxidation reaction Methods 0.000 title abstract 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002253 acid Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 238000005260 corrosion Methods 0.000 claims description 13
- 230000007797 corrosion Effects 0.000 claims description 13
- 239000004744 fabric Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 abstract 2
- 238000009966 trimming Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201010597242.5A CN102569020B (en) | 2010-12-10 | 2010-12-10 | Method and device for removing cut oxidation films of 8-inch wafers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201010597242.5A CN102569020B (en) | 2010-12-10 | 2010-12-10 | Method and device for removing cut oxidation films of 8-inch wafers |
Publications (2)
Publication Number | Publication Date |
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CN102569020A true CN102569020A (en) | 2012-07-11 |
CN102569020B CN102569020B (en) | 2015-01-14 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201010597242.5A Active CN102569020B (en) | 2010-12-10 | 2010-12-10 | Method and device for removing cut oxidation films of 8-inch wafers |
Country Status (1)
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CN (1) | CN102569020B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103065935A (en) * | 2012-12-03 | 2013-04-24 | 天津中环领先材料技术有限公司 | Method of disposing of insulated gate bipolar translator (IGBT) silicon wafer polishing piece edge oxidation film in extrusion mode |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1753154A (en) * | 2004-09-23 | 2006-03-29 | 北京有色金属研究总院 | Method of removing chip oxide film edge and its device |
CN1777980A (en) * | 2003-04-22 | 2006-05-24 | 东京毅力科创株式会社 | Method for removing silicon oxide film and processing apparatus |
CN101339901A (en) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | Oxide film on wafer surface removing process and apparatus |
US20090320885A1 (en) * | 2008-06-27 | 2009-12-31 | Kazuki Inoue | Substrate treatment apparatus |
CN201910408U (en) * | 2010-12-10 | 2011-07-27 | 北京有色金属研究总院 | Removing device of oxide film at 8-inch wafer notch |
-
2010
- 2010-12-10 CN CN201010597242.5A patent/CN102569020B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1777980A (en) * | 2003-04-22 | 2006-05-24 | 东京毅力科创株式会社 | Method for removing silicon oxide film and processing apparatus |
CN1753154A (en) * | 2004-09-23 | 2006-03-29 | 北京有色金属研究总院 | Method of removing chip oxide film edge and its device |
CN101339901A (en) * | 2007-07-02 | 2009-01-07 | 北京有色金属研究总院 | Oxide film on wafer surface removing process and apparatus |
US20090320885A1 (en) * | 2008-06-27 | 2009-12-31 | Kazuki Inoue | Substrate treatment apparatus |
CN201910408U (en) * | 2010-12-10 | 2011-07-27 | 北京有色金属研究总院 | Removing device of oxide film at 8-inch wafer notch |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103065935A (en) * | 2012-12-03 | 2013-04-24 | 天津中环领先材料技术有限公司 | Method of disposing of insulated gate bipolar translator (IGBT) silicon wafer polishing piece edge oxidation film in extrusion mode |
CN103065935B (en) * | 2012-12-03 | 2015-02-04 | 天津中环领先材料技术有限公司 | Method of disposing of insulated gate bipolar translator (IGBT) silicon wafer polishing piece edge oxidation film in extrusion mode |
Also Published As
Publication number | Publication date |
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CN102569020B (en) | 2015-01-14 |
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SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
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Address after: 100088, 2, Xinjie street, Beijing Applicant after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088, 2, Xinjie street, Beijing Applicant before: GRINM Semiconductor Materials Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: GRINM SEMICONDUCTOR MATERIALS CO., LTD. TO: GRINM ADVANCED MATERIALS CO., LTD. |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150610 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20150610 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
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CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder |