CN102586783A - Corrosion inhibitor, preparation method thereof and chemico-mechanical polishing composition - Google Patents
Corrosion inhibitor, preparation method thereof and chemico-mechanical polishing composition Download PDFInfo
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- CN102586783A CN102586783A CN2012100049004A CN201210004900A CN102586783A CN 102586783 A CN102586783 A CN 102586783A CN 2012100049004 A CN2012100049004 A CN 2012100049004A CN 201210004900 A CN201210004900 A CN 201210004900A CN 102586783 A CN102586783 A CN 102586783A
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- IYIXDORQNQKAKM-UHFFFAOYSA-N CC(C(c1ccccc1O)Nc1nnn[nH]1)=O Chemical compound CC(C(c1ccccc1O)Nc1nnn[nH]1)=O IYIXDORQNQKAKM-UHFFFAOYSA-N 0.000 description 1
- TZIWROVDPKGTRE-UHFFFAOYSA-N CCc1ccc(C(C(C)=O)N/C(/C)=N/N=N\C)cc1 Chemical compound CCc1ccc(C(C(C)=O)N/C(/C)=N/N=N\C)cc1 TZIWROVDPKGTRE-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention provides a new azol- and keto-containing corrosion inhibitor shown as a structural formula (I), and also provides a preparation method for the corrosion inhibitor and an acid chemico-mechanical polishing composition containing the corrosion inhibitor. The corrosion inhibitor is suitable for low pressure chemico-mechanical polishing compositions for multi-layer copper interconnection of very large scale integrated circuits, can quickly forms a film on the surface of copper to protect the surface of copper and inhibit corrosion, obviously reduces defects such as chemical corrosion pits, and improves the performance of a polishing solution. In the formula, R1 refers to triazolyl or tetrazolyl.
Description
Technical field
The present invention relates to chemically machinery polished waterborne compositions field, especially relate to novel corrosion inhibitor in the compsn and preparation method thereof and the chemical-mechanical polishing compositions that contains this inhibiter.
Background technology
Chemically machinery polished (CMP) technology be last century the eighties by the Technology of the realization overall situation leveling of IBM research and development; It can avoid defective stack successively with the increase of the interconnection number of plies, has become the core microprocessing of nearly all step in the microelectronics production at present already.
Along with integrated circuit technique enters into deep-submicron, the interconnection performance of being brought by continuous down feature sizes reduces more and more obvious.This is that the ghost effect that resistance, electric capacity, inductance cause will have a strong impact on the performance of circuit because dwindling of characteristic dimension will cause reducing of interconnecting line xsect and distance between centers of tracks.Adopting medium with low dielectric constant material (being the low k dielectric material) then is one of effective way that improves the interconnection performance.But when k＜2.2, the physical strength of low k dielectric layer descends, and is prone to low k film delamination, so must develop the low pressure polishing technology and polishing composition adapts to new production needs.Generally, reducing overdraft can have a negative impact to the CMP overall performance that comprises polishing speed.For example, adopt sophisticated commercial copper polishing composition to carry out the copper polishing, polishing speed was 333.3nm/min when pressure was 5.0psi, and when pressure was reduced to about 0.5psi, polishing speed was decreased to 101.9nm/min, differed about 3 times.Therefore, reduce the press polish meeting and seriously influence throughput.
Chemical-mechanical polishing compositions is a kind of significant effects factor in the CMP step.Can wait according to the oxygenant of choosing, abrasive material and other additive that is fit to such as metal inhibitor and regulate polishing performance,, simultaneously surface imperfection, corrosion reduced to minimumly, and obtain best complanation effect effective polishing to be provided by required polishing speed.CN201110065350.2 provides and has been applicable under at least less than the overdraft of 1.0psi (6.89kPa) waterborne compositions of copper on the polishing of semiconductor wafers; Contain the sour corrosion poiser that is applicable under the weak mechanical effect situation of low overdraft; Polish removal rate reaches as high as 1711.4nm/min, and surfaceness can be to 0.30～0.95nm.U.S. Rhom and Hass has proposed a kind of low downforce pressure polishing compsn and method (CN1644644A) that is used for copper; Be applicable to the copper on the polishing of semiconductor wafers under at least less than the overdraft of 3.0psi; The P contained compound that wherein adds can increase the removal of copper; Under the 1.0psi pressure, add ammonium phosphate front and back polish removal rate and be respectively 150.0nm/min and 266.3nm/min among the embodiment.US6; 620; 037 adopts the polishing composition that does not add inhibiter (like BTA) to carry out the copper polishing in the hope of the lifting polishing speed, yet said composition still needs 3.0psi or bigger overdraft so that effectively remove copper (polishing speed is 234.6nm/min during 3.0psi).
Mostly the copper inhibitor of selecting for use in the polishing fluid is the azole suppressor factor, comprises benzotriazole (BTA), sulfydryl benzotriazole (MBT), tolytriazole (TTA).But these inhibiter mostly have the preparation of being difficult for, the shortcoming of not environmental protection of contaminate environment, and only be useful in the polishing under the normal pressure mostly.Therefore a kind of new inhibiter need be provided, be used for chemically machinery polished (CMP) technology of low overdraft better.
Summary of the invention
In order to realize above-mentioned at least one goal of the invention, one aspect of the present invention provides a kind of inhibiter new, that contain azoles base and ketone group.Further, the present invention also provides the preparation method of this inhibiter.
On the other hand, the invention provides the chemical-mechanical polishing compositions that contains above-mentioned inhibiter.
Particularly, according to the embodiment of one aspect of the invention, inhibiter provided by the invention, its structural formula is following:
R
2=H ,-OH ,-(CH
2)
nCH
3, wherein n is the integer of 0-4.
Further; The present invention also provides the preparation method of above-mentioned inhibiter; Comprising the steps: with the absolute ethyl alcohol to be solvent, is raw material with amino azole compound, aromatic aldehyde, acetone, and three's mol ratio is 1: 1.2: 1.2; Under the condition of pH value 2-3, react, generation has inhibiter as claimed in claim 1.
In anhydrous ethanol solvent, under the sour environment, three types of raw material generation Mannich reactions generate the compound with the disclosed structure of the present invention.
One of according to the embodiment of the present invention, above-mentioned amino azole compound is selected from the 5-amino tetrazole, the compsn of 3-aminotriazole and their arbitrary proportions.
According to one of another embodiment of the present invention, the structural formula of above-mentioned aromatic aldehyde is following:
R wherein
3=H ,-OH ,-(CH
2)
nCH
3, n is the integer of 0-4, its position is in ortho position, contraposition, a position of aldehyde radical.
Embodiment according to a further aspect of the invention, the present invention also provide the chemical-mechanical polishing compositions that comprises above-mentioned inhibiter, comprise colloid SiO
2Abrasive material 1-20wt%, oxygenant 0.5-10wt%, complexing agent 0.1-10wt%, inhibiter as claimed in claim 1, pH regulator agent and water.Wherein: oxygenant can be inorganic or organic peroxy compound, contains at least one peroxy-radical in its compound molecule or for containing any in the compound that is in the high oxidation state element or more than one mixture.The pH regulator agent is selected from the group that comprises inorganic acid alkali, organic acids and base.Complexing agent is selected from the group that comprises Padil, L-Ala, L-glutamic acid, proline(Pro), hydroxyglutamic acid, HEDP, ATMP, 2-HPAA, acetate, oxalic acid, Hydrocerol A, oxamide or the compsn of their arbitrary proportions.The concentration range of inhibiter is 0.01-5wt%.Said compsn is acid, and its pH value is 2-7, is preferably the pH value and is 3-5.Water is deionized water or zero(ppm) water.
One of according to the embodiment of the present invention, the concentration of said inhibiter is preferably 0.01-0.5wt%.
According to another embodiment of the present invention, abrasive material is a colloid silica, and content is 3-5wt%, and mean particle size is the 10-200 nanometer.Further, mean particle size is preferably the 50-80 nanometer.
According to another embodiment of the present invention, said oxygenant is a hydrogen peroxide, and content is 0.9-3wt%.
According to another embodiment of the present invention, said complexing agent is a Padil, and content is 0.5-3wt%.
According to another embodiment of the present invention, said pH regulator agent is selected from the group that comprises sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, Pottasium Hydroxide, ammoniacal liquor, thanomin, trolamine and the compsn of their arbitrary proportions.
Technique effect of the present invention is following:
1. inhibiter disclosed by the invention is adapted at using in the low piezochemistry mechanical polishing composition of multilayer copper wire in large scale integrated circuit copper, can be rapidly at the copper surface filming; Protection copper surface; Suppress corrosion, significantly reduce defectives such as chemical corrosion hole, improve the performance of polishing fluid.
2. the preparation method of inhibiter provided by the invention is simple, and yield is high.The product corrosion mitigating effect is good.
3. experiment showed, chemical-mechanical polishing compositions provided by the invention, be low to moderate under the overdraft situation of 2.0psi that add the back polish removal rate and reach as high as 479.86nm/min, surfaceness can be low to moderate 1.00nm.
Additional aspect of the present invention and advantage part in the following description provide, and part will become obviously from the following description, or recognize through practice of the present invention.
Description of drawings
Above-mentioned and/or additional aspect of the present invention and advantage are from obviously with easily understanding becoming the description of embodiment below in conjunction with accompanying drawing, wherein:
Fig. 1 is metallic surface, the copper polishing fluid polishing back pattern 3-D view that does not add inhibiter;
Fig. 2 is metallic surface, the copper polishing fluid polishing back pattern 3-D view that adds benzotriazole (BTA);
Fig. 3 is the copper polishing fluid surface of polished pattern 3-D view that adds 4-OH 4TP of the present invention.
Embodiment
Describe embodiments of the invention below in detail, the example of said embodiment is shown in the drawings.Be exemplary through the embodiment that is described with reference to the drawings below, only be used to explain the present invention, and can not be interpreted as limitation of the present invention.
The preparation method of inhibiter provided by the invention specifically comprises the steps: to calculate each raw material consumption according to amino azole compound, acetone, aromatic aldehyde ingredient proportion (mol ratio) 1: 1.2: 1.2.As solvent, quantitative amino azole compound is dissolved in the absolute ethyl alcohol (the consumption of absolute ethyl alcohol with absolute ethyl alcohol; With reactant degree of being dissolved as fully) treat to dissolve fully after, add acetone and aromatic aldehyde, uses Hydrogen chloride adjusting pH to be 2-3; Stir certain hour under the room temperature, cooling.Churning time can be confirmed according to response situation, for example stirs 24h even longer time.
After question response is abundant, can for example can adopt Rotary Evaporators to steam solvent further with removal of solvents.And recrystallization, the number of times of recrystallization can be for repeatedly, and for example twice, obtain the title product of solid powdery.Screwing out the preceding product of solvent is liquid.After screwing out solvent, products therefrom promptly becomes pressed powder.Step through recrystallization can purified product.
With the form of embodiment, the preparation method and the corresponding product of inhibiter provided by the invention is detailed below.
Embodiment 1
At first 0.05mol 5-amino tetrazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolves fully, adds acetone and the 0.06mol phenyl aldehyde of 0.06mol again, use Hydrogen chloride to regulate pH and be 2-3, stir 24h under the room temperature, cooling.It is the product (4TP) of main body composition that twice recrystallization obtains with the Mannich base, and structural formula is following:
Embodiment 2
At first 0.05mol 5-amino tetrazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolves fully, adds acetone and the 0.06mol salicylaldhyde of 0.06mol again, use Hydrogen chloride to regulate pH and be 2-3, stir 24h under the room temperature, cooling.It is the product (2-OH-4TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Embodiment 3
At first 0.05mol 5-amino tetrazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolves fully, adds acetone and the 0.06mol4-hydroxy benzaldehyde of 0.06mol again, use Hydrogen chloride to regulate pH and be 2-3, stir 24h under the room temperature, cooling.It is the product (4-OH-4TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Embodiment 4
At first 0.05mol 5-amino tetrazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolves fully, adds acetone and the 0.06mol p-tolyl aldehyde of 0.06mol again, use Hydrogen chloride to regulate pH and be 2-3, stir 24h under the room temperature, cooling.It is the product (4-Me-4TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Embodiment 5
At first 0.05mol 5-amino tetrazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolved fully, the acetone and the 0.06mol that add 0.06mol again used Hydrogen chloride to regulate pH and are 2-3 ethylbenzene formaldehyde, stir 24h under the room temperature, cooling.It is the product (4-Et-4TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Embodiment 6
At first 0.05mol 3-aminotriazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolves fully, adds acetone and the 0.06mol phenyl aldehyde of 0.06mol again, use Hydrogen chloride to regulate pH and be 2-3, stir 24h under the room temperature, cooling.It is the product (3TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Embodiment 7
At first 0.05mol 3-aminotriazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolves fully, adds acetone and the 0.06mol salicylaldhyde of 0.06mol again, use Hydrogen chloride to regulate pH and be 2-3, stir 24h under the room temperature, cooling.It is the product (2-OH-3TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Embodiment 8
At first 0.05mol 3-aminotriazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolves fully, adds acetone and the 0.06mol PARA HYDROXY BENZALDEHYDE of 0.06mol again, use Hydrogen chloride to regulate pH and be 2-3, stir 24h under the room temperature, cooling.It is the product (4-OH-3TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Embodiment 9
At first 0.05mol 3-aminotriazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolves fully, adds acetone and the 0.06mol p-tolyl aldehyde of 0.06mol again, use Hydrogen chloride to regulate pH and be 2-3, stir 24h under the room temperature, cooling.It is the product (4-Me-3TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Embodiment 10
At first the 0.05mol3-aminotriazole is dissolved in the 50-100ml absolute ethyl alcohol, after the question response thing dissolved fully, the acetone and the 0.06mol that add 0.06mol again used Hydrogen chloride to regulate pH and are 2-3 ethylbenzene formaldehyde, stir 24h under the room temperature, cooling.It is the product (4-Et-3TP) of main body composition that twice recrystallization obtains with the Mannich base, and its structural formula is following:
Comparative experimental example 1 polishing experiments and corrosion inhibition evaluation
1. experiment is divided into groups and is received trial product:
It is 12 groups that experiment is divided into, and wherein control group is 2 groups, and 10 groups of experimental group adopt following chemical-mechanical polishing compositions respectively:
Control group 1 adds 10 gram Padils in the 800 gram deionized waters, stirring and dissolving, evenly after, slowly stir the 50 nano silicon water-sols that add 100 grams 30%, polishing is carried out before, add 100 and restrain 30% oxidants hydrogen peroxide solution, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Control group 2 adds 10 gram Padils, 100 milligrams of benzotriazoles (BTA) in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%, before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 1 adds 10 gram Padils, 100 milligrams of embodiment 1 gained 4TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%, before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 2 adds 10 gram Padils, 100 milligrams of embodiment 2 gained 2-OH-4TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%; Before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 3 adds 10 gram Padils, 100 milligrams of embodiment 3 gained 4-OH-4TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%; Before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 4 adds 10 gram Padils, 100 milligrams of embodiment 4 gained 4-Me-4TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%; Before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 5 adds 10 gram Padils, 100 milligrams of embodiment 5 gained 4-Et-4TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%; Before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 6 adds 10 gram Padils, 100 milligrams of embodiment 6 gained 3TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%, before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 7 adds 10 gram Padils, 100 milligrams of embodiment 7 gained 2-OH-3TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%; Before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 8 adds 10 gram Padils, 100 milligrams of embodiment 8 gained 4-OH-3TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%; Before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 9 adds 10 gram Padils, 100 milligrams of embodiment 9 gained 4-Me-3TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%; Before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
Experimental group 10 adds 10 gram Padils, 100 milligrams of embodiment 10 gained 4-Et-3TP in the 800 gram deionized waters; Stirring and dissolving, evenly after; Slowly stir the 50 nano silicon water-sols that add 100 grams 30%; Before polishing is carried out, add the oxidants hydrogen peroxide solution of 100 grams 30%, use H
2SO
4Calibration pH value to 4.0 adds water at last and supplies 1000 and restrain and stir, and obtains the copper polishing fluid.
2. laboratory apparatus and method: polishing experiments uses CETR CP4 to be the polishing experiments machine; Use the Rodel IC1000/SUBA IV of company microvoid polyurethane polishing pad; The polishing disk rotating speed is that 100r/min, polishing fluid flow are 100mL/min, and polished is 2 cun silica-based copper sheets of electroplating surface.It is the precise electronic balance check weighing calculating of 0.01mg that static etch rate (SOR) and polish removal rate (MRR) adopt precision, uses the three-dimensional white light interference surface topographic apparatus fo of the Veeco microXAM of company to observe surface topography and gauging surface roughness (Sa).
Above control group and experimental group are all carried out static corrosion experiment and dynamic polishing experiments, static corrosion time 10min, and the polishing overdraft is 2.0psi.
3. experimental result:
Experimental result is seen table 1 in detail.The surface of polished pattern observation synoptic diagram of Comparative Examples 1, Comparative Examples 2 and embodiment 3 is seen Fig. 1-3.
The corrosion inhibition of the different inhibiter of table 1 and to the influence of polishing effect
As shown in table 1, compare with relative blank Comparative Examples 1, add different inhibiter after, SOR and MRR all produce decline in various degree, explain that various inhibiter have all produced absorption film-forming on the copper surface, meet the inhibition mechanism of inhibiter.But the adding of inhibiter has improved surface quality index S a greatly, and is wherein preferable with OH TP series.The corrosion mitigating effect of all kinds of inhibiter of comprehensive assessment and polishing characteristic, 4-OH-4TP shows optimum, when keeping high polishing removal, has improved the polished surface quality greatly, and surfaceness Sa is low to moderate 1.00nm.Also can see among Fig. 1-3: the silicon copper sheet surface of adding after inhibiter polishes is more smooth, and cut and corrosion pit all reduce.Comparison diagram 2 and Fig. 3 can find out that the silicon copper sheet after the silicon copper sheet surface ratio interpolation BTA polishing fluid polishing after polishing with the inhibiter polishing fluid that adds TP series is flat-satin more, and corrosion pit is less.
The interpolation of inhibiter provided by the invention in the chemically machinery polished waterborne compositions; Can under the low overdraft of 2.0psi, effectively guarantee the polishing speed of wafer copper-connection polishing and promote surface quality; Avoid the generation of polishing defect to greatest extent, can replace the BTA that uses always to use in the low piezochemistry mechanical polishing waterborne compositions of copper fully.
Although illustrated and described embodiments of the invention; For those of ordinary skill in the art; Be appreciated that under the situation that does not break away from principle of the present invention and spirit and can carry out multiple variation, modification, replacement and modification to these embodiment, scope of the present invention is limited accompanying claims and equivalent thereof.
Claims (10)
1. inhibiter, its structural formula is following:
R
2=H ,-OH ,-(CH
2)
nCH
3, wherein n is the integer of 0-4.
2. the preparation method of an inhibiter comprises the steps:
With the absolute ethyl alcohol is solvent, is raw material with amino azole compound, aromatic aldehyde, acetone, and three's mol ratio is 1: 1.2: 1.2, under the condition of pH value 2-3, reacts, and generates to have inhibiter as claimed in claim 1.
3. preparation method as claimed in claim 2, wherein said amino azole compound is selected from the 5-amino tetrazole, the 3-aminotriazole.
4. preparation method as claimed in claim 2, the structural formula of wherein said aromatic aldehyde is following:
R wherein
3=H ,-OH ,-(CH
2)
nCH
3, n is the integer of 0-4, its position is in ortho position, contraposition, a position of aldehyde radical.
5. a chemical-mechanical polishing compositions comprises colloid SiO
2Abrasive material 1-20wt%, oxygenant 0.5-10wt%, complexing agent 0.1-10wt%, inhibiter as claimed in claim 1, pH regulator agent and water, wherein
Said oxygenant is inorganic or the organic peroxy compound, contains at least one peroxy-radical in its compound molecule or for containing any in the compound that is in the high oxidation state element or more than one mixture;
Said pH regulator agent is selected from the group that comprises inorganic acid alkali, organic acids and base;
Said complexing agent is selected from the group that comprises Padil, L-Ala, L-glutamic acid, proline(Pro), hydroxyglutamic acid, HEDP, ATMP, 2-HPAA, acetate, oxalic acid, Hydrocerol A, oxamide or the compsn of their arbitrary proportions;
The concentration of said inhibiter is 0.01-5wt%;
The pH value of said compsn is 2-7; Be preferably the pH value and be 3-5;
Said water is deionized water or zero(ppm) water.
6. chemical-mechanical polishing compositions as claimed in claim 5, the concentration of wherein said inhibiter are 0.01-0.5wt%.
7. chemical-mechanical polishing compositions as claimed in claim 5, wherein said abrasive material are colloid silica, and content is 3-5wt%, and mean particle size is the 10-200 nanometer; Being preferably mean particle size is the 50-80 nanometer.
8. chemical-mechanical polishing compositions as claimed in claim 5, wherein said oxygenant are hydrogen peroxide, and content is 0.9-3wt%.
9. chemical-mechanical polishing compositions as claimed in claim 5, wherein said complexing agent are Padil, and content is 0.5-3wt%.
10. chemical-mechanical polishing compositions as claimed in claim 5, wherein said pH regulator agent are selected from the group that comprises sulfuric acid, hydrochloric acid, nitric acid, phosphoric acid, Pottasium Hydroxide, ammoniacal liquor, thanomin, trolamine and the compsn of their arbitrary proportions.
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